CN102074089B - Active infrared anti-theft alarm - Google Patents
Active infrared anti-theft alarm Download PDFInfo
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- CN102074089B CN102074089B CN2011100040698A CN201110004069A CN102074089B CN 102074089 B CN102074089 B CN 102074089B CN 2011100040698 A CN2011100040698 A CN 2011100040698A CN 201110004069 A CN201110004069 A CN 201110004069A CN 102074089 B CN102074089 B CN 102074089B
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Abstract
The invention relates to an infrared anti-theft alarm, and discloses an active infrared anti-theft alarm. The active infrared anti-theft alarm comprises an infrared emission module, an infrared receiving module and a master control module, wherein both the infrared emission module and the infrared receiving module are electrically connected with the master control module; the infrared emission module can provide three levels of infrared pulse strength; the master control module is used for control according to the infrared pulse strength received by the infrared receiving module; the infrared emission module generally works at low-level strength; thus, the reliability of an infrared light emitting diode can be improved, and the service life of the infrared light emitting diode can be prolonged.
Description
Technical field
The present invention relates to the infrared alarm field, specifically is a kind of active infra-red burglar alarm.
Background technology
Existing active infra-red alarm; Because environment for use has a large amount of disturbing factors, like mist, rain, snow etc., these factors produce decay to the infrared pulse signal; In order to overcome the false alarm that these factors possibly cause; Adopt to strengthen the method for the infrared pulse signal intensity that the infrared module sends, make the infrared pulse signal intensity contain a large amount of design margin intensity, a large amount of design margin intensity makes the lost of life of infrarede emitting diode.
Summary of the invention
The present invention is directed to the deficiency of prior art, provide a kind of infrared pulse intensity adjustable active infra-red burglar alarm.
Technical scheme of the present invention is following:
A kind of active infra-red burglar alarm; Comprise infrared transmission module, infrared receiving module and main control module; Infrared transmission module and infrared receiving module all are electrically connected with main control module, and infrared transmission module comprises first resistance, second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, first inductance, first electric capacity, second electric capacity, the 3rd electric capacity, the 4th electric capacity, the 5th electric capacity, the 6th electric capacity, first diode, second diode, first voltage stabilizing diode, first triode, second triode, the 3rd triode, first infrarede emitting diode, second infrarede emitting diode, first Sheffer stroke gate and second Sheffer stroke gate; First electric capacity and second electric capacity are electrochemical capacitors, and the 3rd electric capacity, the 4th electric capacity and the 5th electric capacity are electrodeless electric capacities; First triode, second triode and the 3rd triode are NPN type triode; One end of first inductance is connected to the 12V dc power output end of main control module, and the other end is connected to the positive pole of first diode through first resistance; The positive pole of first electric capacity links to each other with the negative pole of first diode, and the negative pole of first electric capacity links to each other with power supply ground, and the 3rd electric capacity is connected in parallel on first electric capacity; One end of second resistance is connected to the negative pole of first diode, and the other end is connected to the positive pole of the first infraluminescence pipe; The negative pole of the first infraluminescence pipe links to each other with the positive pole of the second infraluminescence pipe; The negative pole of second infrarede emitting diode links to each other with the collector of first triode; The collector of first triode links to each other with the collector of second triode; The base stage of first triode links to each other with the emitter-base bandgap grading of second triode, and the base stage of second triode links to each other with the collector of the 3rd triode, and the emitter-base bandgap grading of the 3rd triode links to each other with power supply ground; One end of the 3rd resistance links to each other with the emitter-base bandgap grading of first triode, and the other end links to each other with the base stage of the 3rd triode; One end of the 4th resistance links to each other with the emitter-base bandgap grading of first triode, and the other end links to each other with power supply ground; The positive pole of second electric capacity links to each other with the positive pole of first infrarede emitting diode, and the negative pole of second electric capacity links to each other with power supply ground; One end of the 4th electric capacity links to each other with the collector of second triode, and the other end links to each other with the base stage of second triode; One end of the 9th resistance links to each other with the positive pole of first electric capacity, and the other end links to each other with the negative pole of first voltage stabilizing diode; The positive pole of first voltage stabilizing diode links to each other with power supply ground; The positive pole of the 6th electric capacity links to each other with the negative pole of first voltage stabilizing diode, and the negative pole of the 6th electric capacity links to each other with power supply ground; The first input end of first Sheffer stroke gate links to each other with the negative pole of first voltage stabilizing diode; One end of the 6th resistance links to each other with second input end of first Sheffer stroke gate, and the other end links to each other with the positive pole of second diode; Two input ends of second Sheffer stroke gate connect together, and link to each other with the output terminal of first Sheffer stroke gate; One end of the 7th resistance links to each other with the output terminal of first Sheffer stroke gate, and the other end links to each other with the positive pole of second diode; One end of the 8th resistance links to each other with the output terminal of first Sheffer stroke gate, and the other end links to each other with the negative pole of second diode; One end of the 5th electric capacity links to each other with the output terminal of second Sheffer stroke gate, and the other end links to each other with the positive pole of second diode; One end of the 5th resistance links to each other with the output terminal of second Sheffer stroke gate, and the other end links to each other with the base stage of second triode; It is characterized in that: infrared transmission module also comprises the tenth resistance, the 11 resistance, the 12 resistance, the 13 resistance, the 14 resistance, the 15 resistance, the 16 resistance, first comparer, second comparer, the 4th FET and the 5th FET; One end of the tenth resistance links to each other with the negative pole of first voltage stabilizing diode, and the other end links to each other with the negative input end of first comparer; One end of the 11 resistance links to each other with the negative input end of first comparer, and the other end links to each other with the negative input end of second comparer; One end of the 12 resistance links to each other with the negative input end of second comparer, and the other end links to each other with power supply ground; One end of the 13 resistance links to each other with the positive input terminal of first comparer, and an end of the 14 resistance links to each other with the positive input terminal of second comparer, and the other end links to each other with the other end of the 13 resistance, and is connected to main control module; One end of the 15 resistance links to each other with the negative pole of first diode, and the other end links to each other with the drain electrode of the 4th FET; The output terminal of first comparer links to each other with the grid of the 4th FET, and the source electrode of the 4th FET links to each other with the positive pole of first infrarede emitting diode; One end of the 16 resistance links to each other with the negative pole of first diode, and the other end links to each other with the drain electrode of the 5th FET; The output terminal of second comparer links to each other with the grid of the 5th FET, and the source electrode of the 5th FET links to each other with the positive pole of first infrarede emitting diode.
Compared with prior art; The present invention has following advantage: infrared transmission module of the present invention provides third gear infrared pulse intensity such as basic, normal, high; Controlled according to the infrared pulse intensity that receives of infrared receiving module by main control module, high-grade intensity and intensity (containing a large amount of design margin intensity) of the prior art are suitable, and infrared transmission module is usually operated at low-grade intensity; Thereby can improve the reliability of infrarede emitting diode, prolong its serviceable life.
Description of drawings
Fig. 1 is the circuit theory diagrams of infrared transmission module of the present invention.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further detailed explanation.
As shown in Figure 1, in the infrared transmission module, an end of first inductance L 1 is connected to the 12V dc power output end of main control module, and the other end is connected to the positive pole of the first diode D1 through first resistance R 1; The positive pole of first capacitor C 1 links to each other with the negative pole of the first diode D1, and the negative pole of first capacitor C 1 links to each other with power supply ground, and the 3rd capacitor C 3 is connected in parallel on first capacitor C 1; One end of second resistance R 2 is connected to the negative pole of the first diode D1, and the other end is connected to the positive pole of the first infraluminescence pipe LED1; The negative pole of the first infraluminescence pipe LED1 links to each other with the positive pole of the second infraluminescence pipe LED2; The negative pole of the second infrarede emitting diode LED2 links to each other with the collector of the first triode Q1; The collector of the first triode Q1 links to each other with the collector of the second triode Q2; The base stage of the first triode Q1 links to each other with the emitter-base bandgap grading of the second triode Q2, and the base stage of the second triode Q2 links to each other with the collector of the 3rd triode Q3, and the emitter-base bandgap grading of the 3rd triode Q3 links to each other with power supply ground; One end of the 3rd resistance R 3 links to each other with the emitter-base bandgap grading of the first triode Q1, and the other end links to each other with the base stage of the 3rd triode Q3; One end of the 4th resistance R 4 links to each other with the emitter-base bandgap grading of the first triode Q1, and the other end links to each other with power supply ground; The positive pole of second capacitor C 2 links to each other with the positive pole of the first infrarede emitting diode LED1, and the negative pole of second capacitor C 2 links to each other with power supply ground; One end of the 4th capacitor C 4 links to each other with the collector of the second triode Q2, and the other end links to each other with the base stage of the second triode Q2; One end of the 9th resistance R 9 links to each other with the positive pole of first capacitor C 1, and the other end links to each other with the negative pole of the first voltage stabilizing diode DZ1; The positive pole of the first voltage stabilizing diode DZ1 links to each other with power supply ground; The positive pole of the 6th capacitor C 6 links to each other with the negative pole of the first voltage stabilizing diode DZ1, and the negative pole of the 6th capacitor C 6 links to each other with power supply ground; The first input end of the first Sheffer stroke gate U1 links to each other with the negative pole of the first voltage stabilizing diode DZ1; One end of the 6th resistance R 6 links to each other with second input end of the first Sheffer stroke gate U1, and the other end links to each other with the positive pole of the second diode D2; Two input ends of the second Sheffer stroke gate U2 connect together, and link to each other with the output terminal of the first Sheffer stroke gate U1; One end of the 7th resistance R 7 links to each other with the output terminal of the first Sheffer stroke gate U1, and the other end links to each other with the positive pole of the second diode D2; One end of the 8th resistance R 8 links to each other with the output terminal of the first Sheffer stroke gate U1, and the other end links to each other with the negative pole of the second diode D2; One end of the 5th capacitor C 5 links to each other with the output terminal of the second Sheffer stroke gate U2, and the other end links to each other with the positive pole of the second diode D2; One end of the 5th resistance R 5 links to each other with the output terminal of the second Sheffer stroke gate U2, and the other end links to each other with the base stage of the second triode Q2; One end of the tenth resistance R 10 links to each other with the negative pole of the first voltage stabilizing diode DZ1, and the other end links to each other with the negative input end of the first comparer A1; One end of the 11 resistance R 11 links to each other with the negative input end of the first comparer A1, and the other end links to each other with the negative input end of the second comparer A2; One end of the 12 resistance R 12 links to each other with the negative input end of the second comparer A2, and the other end links to each other with power supply ground; One end of the 13 resistance R 13 links to each other with the positive input terminal of the first comparer A1, and an end of the 14 resistance R 14 links to each other with the positive input terminal of the second comparer A2, and the other end links to each other with the other end of the 13 resistance R 13, and is connected to main control module; One end of the 15 resistance R 15 links to each other with the negative pole of the first diode D1, and the other end links to each other with the drain electrode of the 4th FET Q4; The output terminal of the first comparer A1 links to each other with the grid of the 4th FET Q4, and the source electrode of the 4th FET Q4 links to each other with the positive pole of the first infrarede emitting diode LED1; One end of the 16 resistance R 16 links to each other with the negative pole of the first diode D1, and the other end links to each other with the drain electrode of the 5th FET Q5; The output terminal of the second comparer A2 links to each other with the grid of the 5th FET Q5, and the source electrode of the 5th FET links to each other with the positive pole of the first infrarede emitting diode LED1.
Among the present invention; The infrared pulse signal intensity that main control module receives according to infrared receiving module is controlled the value of Vf, and generally, the value of Vf is 0; The 4th FET Q4 and the 5th FET Q5 are in off state, and infrarede emitting diode is operated in low-grade intensity; When mist, rain etc. disturb increase; The infrared pulse signal intensity that infrared receiving module receives weakens; When being attenuated to a certain degree, main control module adjustment Vf value makes the 5th FET Q5 be in conducting state, and the 4th FET Q4 still is in off state; So just make infrarede emitting diode be operated in middle-grade intensity, the false triggering that can avoid undesired signals such as mist, rain to cause; When mist, rain etc. disturb continuation to increase; The infrared pulse signal intensity that infrared receiving module receives weakens gradually; When being attenuated to a certain degree; Main control module adjustment Vf value makes the 5th FET Q5 and the 4th FET Q4 all be in conducting state, so just makes infrarede emitting diode be operated in high-grade intensity, and this moment is suitable with the intensity of existing infrared transmission module.
Claims (1)
1. active infra-red burglar alarm; Comprise infrared transmission module, infrared receiving module and main control module; Infrared transmission module and infrared receiving module all are electrically connected with main control module, and infrared transmission module comprises first resistance, second resistance, the 3rd resistance, the 4th resistance, the 5th resistance, the 6th resistance, the 7th resistance, the 8th resistance, the 9th resistance, first inductance, first electric capacity, second electric capacity, the 3rd electric capacity, the 4th electric capacity, the 5th electric capacity, the 6th electric capacity, first diode, second diode, first voltage stabilizing diode, first triode, second triode, the 3rd triode, first infrarede emitting diode, second infrarede emitting diode, first Sheffer stroke gate and second Sheffer stroke gate; First electric capacity and second electric capacity are electrochemical capacitors, and the 3rd electric capacity, the 4th electric capacity and the 5th electric capacity are electrodeless electric capacities; First triode, second triode and the 3rd triode are NPN type triode; One end of first inductance is connected to the 12V dc power output end of main control module, and the other end is connected to the positive pole of first diode through first resistance; The positive pole of first electric capacity links to each other with the negative pole of first diode, and the negative pole of first electric capacity links to each other with power supply ground, and the 3rd electric capacity is connected in parallel on first electric capacity; One end of second resistance is connected to the negative pole of first diode, and the other end is connected to the positive pole of the first infraluminescence pipe; The negative pole of the first infraluminescence pipe links to each other with the positive pole of the second infraluminescence pipe; The negative pole of second infrarede emitting diode links to each other with the collector of first triode; The collector of first triode links to each other with the collector of second triode; The base stage of first triode links to each other with the emitter-base bandgap grading of second triode, and the base stage of second triode links to each other with the collector of the 3rd triode, and the emitter-base bandgap grading of the 3rd triode links to each other with power supply ground; One end of the 3rd resistance links to each other with the emitter-base bandgap grading of first triode, and the other end links to each other with the base stage of the 3rd triode; One end of the 4th resistance links to each other with the emitter-base bandgap grading of first triode, and the other end links to each other with power supply ground; The positive pole of second electric capacity links to each other with the positive pole of first infrarede emitting diode, and the negative pole of second electric capacity links to each other with power supply ground; One end of the 4th electric capacity links to each other with the collector of second triode, and the other end links to each other with the base stage of second triode; One end of the 9th resistance links to each other with the positive pole of first electric capacity, and the other end links to each other with the negative pole of first voltage stabilizing diode; The positive pole of first voltage stabilizing diode links to each other with power supply ground; The positive pole of the 6th electric capacity links to each other with the negative pole of first voltage stabilizing diode, and the negative pole of the 6th electric capacity links to each other with power supply ground; The first input end of first Sheffer stroke gate links to each other with the negative pole of first voltage stabilizing diode; One end of the 6th resistance links to each other with second input end of first Sheffer stroke gate, and the other end links to each other with the positive pole of second diode; Two input ends of second Sheffer stroke gate connect together, and link to each other with the output terminal of first Sheffer stroke gate; One end of the 7th resistance links to each other with the output terminal of first Sheffer stroke gate, and the other end links to each other with the positive pole of second diode; One end of the 8th resistance links to each other with the output terminal of first Sheffer stroke gate, and the other end links to each other with the negative pole of second diode; One end of the 5th electric capacity links to each other with the output terminal of second Sheffer stroke gate, and the other end links to each other with the positive pole of second diode; One end of the 5th resistance links to each other with the output terminal of second Sheffer stroke gate, and the other end links to each other with the base stage of second triode; It is characterized in that: infrared transmission module also comprises the tenth resistance, the 11 resistance, the 12 resistance, the 13 resistance, the 14 resistance, the 15 resistance, the 16 resistance, first comparer, second comparer, the 4th FET and the 5th FET; One end of the tenth resistance links to each other with the negative pole of first voltage stabilizing diode, and the other end links to each other with the negative input end of first comparer; One end of the 11 resistance links to each other with the negative input end of first comparer, and the other end links to each other with the negative input end of second comparer; One end of the 12 resistance links to each other with the negative input end of second comparer, and the other end links to each other with power supply ground; One end of the 13 resistance links to each other with the positive input terminal of first comparer, and an end of the 14 resistance links to each other with the positive input terminal of second comparer, and the other end links to each other with the other end of the 13 resistance, and is connected to main control module; One end of the 15 resistance links to each other with the negative pole of first diode, and the other end links to each other with the drain electrode of the 4th FET; The output terminal of first comparer links to each other with the grid of the 4th FET, and the source electrode of the 4th FET links to each other with the positive pole of first infrarede emitting diode; One end of the 16 resistance links to each other with the negative pole of first diode, and the other end links to each other with the drain electrode of the 5th FET; The output terminal of second comparer links to each other with the grid of the 5th FET, and the source electrode of the 5th FET links to each other with the positive pole of first infrarede emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100040698A CN102074089B (en) | 2011-01-07 | 2011-01-07 | Active infrared anti-theft alarm |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100040698A CN102074089B (en) | 2011-01-07 | 2011-01-07 | Active infrared anti-theft alarm |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102074089A CN102074089A (en) | 2011-05-25 |
| CN102074089B true CN102074089B (en) | 2012-05-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2011100040698A Expired - Fee Related CN102074089B (en) | 2011-01-07 | 2011-01-07 | Active infrared anti-theft alarm |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105139566B (en) * | 2015-08-15 | 2017-05-03 | 华北电力大学（保定） | Security control circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2452794C3 (en) * | 1974-11-07 | 1979-08-30 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Automatic level adjustment circuit for presettable IR pulse monitoring devices with clocked receiver |
| CN2060916U (en) * | 1989-08-29 | 1990-08-22 | 黄明 | Alarming equipment with electronic guarding device |
| CN2103168U (en) * | 1991-11-04 | 1992-04-29 | 郭凯 | Infrared alarm device |
| CN2153098Y (en) * | 1993-05-04 | 1994-01-12 | 张家平 | Ultrasonic burglar alarm |
| CN201936413U (en) * | 2011-01-07 | 2011-08-17 | 华南理工大学 | Active infrared anti-theft alarm apparatus |
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