CN101789040A - Design method of Geiger mode angular position digitizer (APD) passive quenching and recovering integrated circuit - Google Patents
Design method of Geiger mode angular position digitizer (APD) passive quenching and recovering integrated circuit Download PDFInfo
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Abstract
The invention discloses a design method of a Geiger mode angular position digitizer (APD) passive quenching and recovering integrated circuit. Based on actual measurement characteristics of a target APD, the invention abstracts an I-V relation, thereby establishing a nonlinear module for expressing the actual measurement characteristics of the target APD. Meanwhile, a fluidic switch is added in a design process for judging the snowslide quenching time and controlling the snowslide quenching process, and the problem that whole nonlinear I-V characteristics and dynamic conducting resistances of the target APD can not fully considered so that the snowslide quenching time can not be accurately judged in the traditional design is solved, thereby improving the design precision and the design efficiency of the Geiger mode APD passive quenching and recovering integrated circuit, enhancing the success ratio of the passive quenching and recovering integrated circuit, and lowering the design cost and the manufacture cost.
Description
Technical field
The present invention relates to the integrated circuit (IC) design technology, specifically refer to a kind of " Geiger " pattern avalanche photodide (Avalanche Photon Diode-APD) passive quenching and the method for designing of recovering integrated circuit, it uses the design of oppose " Geiger " Mode A PD device integrated circuit level passive quenching and restoring circuit.
Background technology
Avalanche photo diode (APD) is a kind of main detector that can realize atomic weak light detection.Under " Geiger " mode of operation, because the avalanche gain of device is very high, single photon incident promptly may cause snowslide pulse output, thereby the avalanche photodide of " Geiger " pattern work can be realized single photon detection.So-called " Geiger " pattern, promptly APD is biased in the working point that is higher than its avalanche voltage, triggers snowslide in case the charge carrier that has photon or thermal excitation to produce arrives, and just produces electric current in circuit.The rising edge of current impulse indicates the time of arrival of photon.
Unit " Geiger " Mode A PD detector adopts peripheral quenching circuit to realize the control of device when blind " " and " release time " usually.Different with unit component, the multielement array detector then needs to control with the integrated form quenching circuit, thereby make detector can realize bigger scale and the integrated level of Geng Gao, therefore, high performance cancellation becomes the important component part that the APD array detector is developed with the recovery integrated circuit.Yet " Geiger " Mode A PD detector operation mode and general photodiode have a great difference, need adopt new method to its peripheral quenching with the design that recovers integrated circuit." Geiger " Mode A PD detector operation mechanism is that detector p-n junction two ends apply and are higher than its avalanche voltage V
BreakBias voltage, under this bias voltage, single charge carrier injects depletion layer can cause a self-holding snowslide, electric current rises to the stationary value of milliampere magnitude rapidly.Produce if initial charge carrier is a light, the rising edge of avalanche current is represented the time of arrival of the light signal that detects so, and degree of accuracy can reach picosecond magnitude.When being reduced to, detector two auspicious bias voltages are lower than V
BreakThe time or avalanche current when being reduced to enough little (being generally 100uA), charge carrier by avalanche region is considerably less, because electric current is time dependent uneven distribution, always having an a certain moment does not have charge carrier to pass through the situation of forceful electric power place impact ionization, the cancellation of snowslide at this moment.In order to survey next incident photon, the detector bias voltage must return to and be higher than V after the snowslide cancellation
BreakState.Therefore, to " Geiger " Mode A PD peripheral quench to design accurately with fast quick-recovery integrated circuit need suitable method for designing.
" Geiger " Mode A PD passive quenching of having reported in the document is comparatively rough and imperfection with the recovery method of designing integrated circuit, and its design process is as follows:
At first in EDA (Electronic Design Automation electric design automation) design platform, utilize APD device that a simple breadboardin is operated in " Geiger " pattern (as shown in Figure 1: direct voltage source V wherein
BreakThe avalanche voltage of expression APD device, resistance R
dThe conducting resistance of expression APD device, voltage cut-out T simulated photons is surveyed and snowslide cancellation process, capacitor C
p, C
dThe distributed capacitance of indication circuit and the junction capacity of APD); Secondly, build passive quenching in above circuit periphery and recover integrated circuit (P wherein as shown in Figure 2,
0Be the PMOS pipe, do big resistance and use that principle is identical with Fig. 3), link to each other with circuit model in the first step, off switch T opens rapidly with simulated photons incident again and excites snowslide and snowslide cancellation, according to each metal-oxide-semiconductor parameter in the simulation waveform adjustment circuit; Finally utilize the standard CMOS process design layout and make in the flow of semiconductor foundries.
Above method for designing has following deficiency:
1) do not consider the nonlinear area I-V characteristic of " Geiger " mode of operation APD device, this will make when the APD bias voltage is higher than saturation voltage in the circuit simulated current greater than actual current, design parameter to metal-oxide-semiconductor impacts, and the circuit function that flow is produced is not good, even can't use.As Fig. 4 (a) is the I-V family curve of circuit under this method for designing, the I-V characteristic of actual measurement " Geiger " Mode A PD device in the comparison diagram 4 (b), find that actual measurement " Geiger " Mode A PD device has saturation current and saturation voltage, after the device both end voltage reaches capacity voltage, voltage continues to increase avalanche current value and no longer increases, and obvious this method for designing has been ignored this point.
2) being different from actual APD break-over of device resistance is the dynamic value that changes with the device both end voltage, and it is a fixed value (R among Fig. 1 that this method for designing is provided with the APD conducting resistance
d) cause and can't adjust accurately before throwing sheet production that each parameter makes circuit performance reach optimization in the integrated circuit.
3) do not carry out the snowslide quenched conditions and judge, promptly open the cancellation that switch T finishes snowslide, this will make the metal-oxide-semiconductor parameter that needs in the circuit design accurately to be adjusted lose the meaning of fine setting.As previously mentioned, the condition that the snowslide of " Geiger " Mode A PD device is quenched is: APD device both end voltage is lower than its avalanche voltage or avalanche current and drops to enough little (about 100uA) and make in a certain moment APD device and do not have charge carrier to pass through in the high electric field region, and the snowslide cancellation could take place.As shown in Figure 1, there is not backfeed loop control voltage cut-out in this method for designing, the shut-in time of switch T is represented " photon incident " time, the cancellation time of opening the time representation avalanche current of T, but T is opened for artificial setting, the cancellation time that can not accurately reflect snowslide, therefore can't do accurate adjustment to each metal-oxide-semiconductor parameter in the integrated circuit according to its simulation result, this will cause the circuit of final production not have function probably, and will cause circuit performance not reach optimization.
Summary of the invention
The purpose of this invention is to provide a kind of " Geiger " Mode A PD passive quenching and the method for designing of recovering integrated circuit, solve the technical deficiency that exists in the existing method for designing.
Method for designing step of the present invention is as follows:
1) at certain concrete model " Geiger " mode of operation APD device, build the most basic big resistance passive quenching circuit in the laboratory, circuit structure as shown in Figure 3.Test 4 basic parameters of avalanche voltage, saturation voltage, snowslide saturation current, voltage recovery time of this device.
2) according to the draw I-V performance plot of this device of test result, take out the voltage-current relationship mathematic(al) representation according to figure.
3) set up the nonlinear block of characterizing device I-V characteristic according to the mathematic(al) representation that extracts in the 2nd step in the EDA design platform, this has just been avoided existing method for designing can not consider the shortcoming of the non-linear I-V characteristic of device integral body comprehensively.Simultaneously, nonlinear I-V characteristic has correctly reflected the dynamic conducting resistance of device again, has overcome that conducting resistance is the shortcoming of fixed value in the existing method for designing.Add junction capacity, circuit distributed capacitance, the votage control switch of device on this basis.
4) set up a current-controlled switch, the electric current in the observation circuit, when electric current enough little (reaching quenched conditions), disconnecting circuit is finished quenching, and this has just been avoided existing method for designing can't accurately judge the snowslide cancellation time and the timely shortcoming of disconnecting circuit.
5) test circuit of using in the 1st step is built in the circuit periphery of setting up good simulation APD device property in above 4 steps, close votage control switch, obtain the waveform that electric current quenches and voltage recovers in circuital current-voltage characteristic and the circuit, contrast the cool time in the 1st pacing test result and adjust the junction capacity of foundation in the 3rd step and the value of distributed capacitance release time.Test result in electric current cool time, APD both end voltage release time and the 1st step that obtains in the 5th step is coincide.
6) replace the 5th with " Geiger " mode of operation APD passive quenching with the recovery integrated circuit and go on foot the peripheral test circuit of setting up.As Fig. 2, wherein PMOS manages P
0Do big resistance and use, its resistance must enough big ability cancellation avalanche current.Because of near conducting resistance and the breadth length ratio of PMOS threshold voltage is inversely proportional to, is provided with and is the PMOS pipe P that big resistance uses
0Breadth length ratio be the minimum breadth length ratio that technology allows, make P
0Can reach maximum conducting resistance, guarantee its enough cancellation avalanche current.But P
0Conducting resistance is big more, and the APD device quenches back both end voltage release time long more (being that device when blind " " is long more), and detectable photon number is few more in the same time of device.Need be at the 7th step joint P
0The breadth length ratio of pipe makes circuit APD both end voltage under the situation that can reach the quenching function short as much as possible release time.Other metal-oxide-semiconductor is done switching tube and is used, and minimum breadth length ratio only need be set make it switching speed is the fastest and get final product.
7) utilize pulse voltage source output burst pulse voltage, close voltage cut-out T, with control snowslide time of origin.Control P
0Grid voltage near threshold voltage, the current value of observing in the circuit changes, the current value that snowslide triggers in the circuit of back can rise to 10mA from 0 within several psecs, and start index reduces, when current index is reduced to 100uA, the current-controlled switch of setting up in the 4th step can be opened automatically, and the electric current cancellation shows that circuit function is normal; Increase P gradually
0The width of pipe continues to observe electric current and changes, and finally can cancellation (being that circuit turn-offs the snowslide cancellation) then continue to increase P as electric current
0The width of pipe is up to P
0When the width of pipe reached a certain value, current index was reduced to 110uA and remain unchanged (could the cancellation snowslide because of only dropping to that 100uA is following), shows that this moment, circuit can not quench to this APD device.P is set
0The width of pipe is the value of the 2nd trial reciprocal.The P of this moment
0Pipe can this APD device of cancellation avalanche current, can make this APD device both end voltage snowslide again after release time the shortest.
8) get the optimized circuit that obtains in the 7th step, adopt standard CMOS process drafting domain and send the foundries flow to make.Promptly obtain the passive quenching and recovery integrated circuit of this model " Geiger " mode of operation APD device best performanceization under used standard CMOS process.
The invention has the advantages that:
1. the design's method can accurately be considered the non-linear I-V characteristic of the APD device of real work under " Geiger " pattern, simulated current is greater than actual current when having avoided in the existing method for designing that the APD bias voltage is higher than saturation voltage in the circuit, design parameter adjustment to metal-oxide-semiconductor impacts, finally cause the passive quenching produced and to recover performance of integrated circuits not good, even can't use.Improved the probability of success of design greatly.
2. the design's method can characterize the dynamic resistance of " Geiger " Mode A PD device under the conducting situation fully, makes design process more accurate, and passive quenching and the performance of recovering integrated circuit are improved.
3. the design's method can judge accurately that integrated circuit reaches the time of quenching condition, and breaking circuit, the avoided existing method for designing accurate shortcoming of decision circuitry cool time, thus " Geiger " Mode A PD passive quenching and the design accuracy of recovering integrated circuit improved greatly.
Description of drawings
Fig. 1 is for being used for characterizing the circuit theory diagrams of " Geiger " mode of operation APD device property, wherein direct voltage source V in the existing method for designing
BreakThe avalanche voltage of expression APD device, resistance R
dThe conducting resistance of expression APD device, voltage cut-out T simulated photons is surveyed and snowslide cancellation process, capacitor C
p, C
dThe stray capacitance of indication circuit and the junction capacity of APD.
Fig. 2 is " Geiger " Mode A PD passive quenching and recovery integrated circuit schematic diagram, wherein PMOS pipe P
0Do big resistance, its grid voltage V1 is adjustable (regulating its conducting resistance of grid voltage scalable), and VSS is a negative voltage, and VDD is the 5V bias voltage, and the total bias voltage in APD two ends is VDD-VSS under the waiting status, and final output signal is kept the 5V high level when not having snowslide to take place; Output signal was reduced to the 0V low level rapidly after snowslide took place; The snowslide cancellation APD device both end voltage output signal of resuming work behind the voltage is recovered the 5V high level.
Fig. 3 is Geiger mode angular position digitizer (APD) passive quenching fundamental diagram, wherein V
ABe the circuit total voltage, it is worth greater than APD device avalanche voltage V
BreakR
LBe the big resistance that is used to quench, its value is 220K Europe, R
SBeing the read output signal small resistor, is 50 Europe; τ
QBe that small resistor RS goes up voltage recovery time, also be the time that both end voltage after APD quenches returns to operating voltage again.
Fig. 4 (a) is operated in the I-V family curve of APD under " Geiger " pattern for actual measurement for the I-V family curve (b) of the APD that equivalent electrical circuit reacted under the existing Design Mode.
Fig. 5 is the circuit structure diagram that characterizes " Geiger " Mode A PD characteristic in the design's method.
Fig. 6 is a both end voltage change curve after the snowslide of " Geiger " Mode A PD device in this example, device generation snowslide in the time of from curve map, can finding out 1us, and the APD both end voltage is recovered fully during 3us, and promptly voltage recovery time is 2us.
Embodiment
To adopt the 0.5um standard CMOS process, be that an avalanche voltage is 20V, saturation voltage is 24.5V, and saturated avalanche current is that 10mA, junction capacity are that " Geiger " Mode A PD designs passive quenching of 1pf is an example with recovering integrated circuit, and the specific design scheme is as follows:
1) at first in the laboratory, builds as shown in Figure 3 big resistance passive quenching circuit (V wherein
ABe the circuit total voltage, it is worth greater than APD device avalanche voltage V
BreakR
LBe the big resistance that is used to quench, its value is 220K Europe, R
SBeing the read output signal small resistor, is 50 Europe), heighten power supply V gradually
AValue, observe to gather R
SThe oscillographic output of last change in voltage is as grow out of nothing constantly V of oscillographic output
AValue is the avalanche voltage value (at this moment being 20V) of APD device, continues rising V
A, write down different V
AThe time correspondence circuit in avalanche current value.Work as V
AWhen being begun to continue to raise by 20V, avalanche current continues to increase, up to working as V
AAvalanche current reaches 10mA when reaching 24.5V, continues to increase V
A, the avalanche current maximal value keeps 10mA.In the observation oscilloscope APD both end voltage change curve (as Fig. 6) as can be seen after the device snowslide release time of voltage be 2us.The avalanche voltage that finally records this model APD is 20V, and saturation voltage is 24.5V, and saturated avalanche current is 10mA, uses this quenching circuit voltage to be 2us release time.
2) follow according to the draw I-V performance plot (as Fig. 5) of this device of test result, take out the voltage-current relationship mathematic(al) representation according to figure.
Wherein
F1(Vd)＝Isat*(Vspad-Vbreak)/(Vsat-Vbreak)......(2)
Ispad is an any time APD avalanche current;
Vspad is an any time APD both end voltage;
Isat is the saturated avalanche current of APD (is 10mA at this routine device);
Vsat is APD saturation voltage (is 24.5V at this routine device);
Vbreak is APD avalanche voltage (is 20V at this routine device).
3) with Verilog-A language description (1), (2) two formulas, set up the nonlinear block of characterizing device I-V characteristic, add junction capacity, circuit distributed capacitance, the votage control switch (as shown in Figure 5) of device on this basis.It is 1pf that junction capacity is set, and distributed capacitance is 2pf.
4) set up current-controlled switch, the electric current in the control circuit, when electric current enough little (reaching quenched conditions), disconnecting circuit is finished quenching.Because the avalanche current of APD device is a milliampere magnitude, and the enough little electric current that reaches quenched conditions usually is 100uA.So switch conduction threshold current I is set here
On=1mA disconnects threshold current I
Off=100uA.
5) build the test circuit of using in the 1st step (being Fig. 3) in the periphery, close votage control switch, obtain circuital current-voltage characteristic and APD both end voltage and change waveform, change comparison of wave shape with APD both end voltage in the 1st pacing test result, if the voltage recovery time that obtains in the 5th step is greater than the 2us of test result in the 1st step, then reduce the value of the circuit distributed capacitance of setting in the 3rd step, otherwise then increase the value of the circuit distributed capacitance of setting in the 3rd step, what voltage recovery time in the APD both end voltage variation waveform that obtains in the 5th step and the 1st pacing examination obtained comes to the same thing, and all is 2us.When final adjustment distributed capacitance was 1pf, the voltage recovery time that the 5th step and the 1st step obtain was coincide.
6) with " Geiger " mode of operation APD passive quenching with recover integrated circuit and replace the peripheral test circuit that the 5th step set up, as shown in Figure 2, in its quenching principle and the 1st step test identical with the passive quenching circuit, PMOS manages P among Fig. 2
0Do big resistance, its grid voltage V1 is adjustable (regulating its conducting resistance of grid voltage scalable), and VSS is a negative voltage, and VDD is the 5V bias voltage, and the total bias voltage in APD two ends is VDD-VSS under the waiting status, and final output signal is kept the 5V high level when not having snowslide to take place; Output signal was reduced to the 0V low level rapidly after snowslide took place; The snowslide cancellation APD device both end voltage output signal of resuming work behind the voltage is recovered the 5V high level.P is set
0And the wide and long minimum value that is the technology permission of other each metal-oxide-semiconductor, wherein wide is 0.55um for 0.5um is long.
7) utilize pulse voltage source output burst pulse (pulse width 10ns) voltage, close the long time of voltage cut-out 10ns, trigger snowslide with simulated photons incident.Control P
0Grid be pressed near the threshold voltage and (be 2.5V in this example), the current value of observing in the circuit changes, the current value that snowslide triggers in the circuit of back can rise to 10mA from 0 within several psecs, and start index reduces, when current index is reduced to 100uA, the current-controlled switch of setting up in the 4th step can be opened automatically, and the electric current cancellation shows that circuit function is normal; Increase P gradually
0The width of pipe continues to observe electric current and changes, and finally can cancellation (being that circuit turn-offs the snowslide cancellation) then continue to increase P as electric current
0The width of pipe is up to P
0When the width of pipe reached 1.2um, current index was reduced to 110uA and remain unchanged (because of only dropping to the following ability of 100uA cancellation snowslide), shows that this moment, circuit can not quench to this APD device.Reset P
0The width of pipe is 1.1um.
8) adopt standard 0.5um standard CMOS process to draw domain, and send the foundries flow to make, promptly obtain the passive quenching and recovery integrated circuit of this model " Geiger " mode of operation APD device best performanceization under the 0.5um standard CMOS process.
Claims (1)
1. Geiger mode angular position digitizer (APD) device passive quenching and the method for designing of recovering integrated circuit is characterized in that may further comprise the steps:
1) for certain concrete model " Geiger " mode of operation APD device, builds big resistance passive quenching circuit, test its fundamental characteristics in the laboratory;
2) follow according to the test result I-V performance plot of this device under this quenching circuit that draw, take out the voltage-current relationship mathematic(al) representation according to figure;
3) set up the non-linear circuit module of characterizing device I-V characteristic according to mathematic(al) representation, add the device other parts on this basis: junction capacity, circuit distributed capacitance, votage control switch, fluidic switch;
4) in the EDA platform, build used passive quenching circuit in the first step,, simulation result and test result are coincide according to the distributed capacitance parameter that is provided with in the measured result set-up procedure 3 in simulation result and the step 1;
5) with APD passive quenching and the big resistance passive quenching circuit that recovers to build in the integrated circuit replacement step 4, adjust integrated circuit each several part parameter and make the circuit simulation best performance, final flow is made.
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| CN109904273A (en) * | 2019-01-08 | 2019-06-18 | 重庆邮电大学 | A kind of equivalent circuit of CMOS SPAD photoelectric device |
| CN111060198A (en) * | 2019-12-03 | 2020-04-24 | 西安电子科技大学 | Gating sampling front-end circuit compatible with laser radar linear/Geiger mode |
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