CN104266770A - Near-infrared multi-photon detector - Google Patents
Near-infrared multi-photon detector Download PDFInfo
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- CN104266770A CN104266770A CN201410532426.1A CN201410532426A CN104266770A CN 104266770 A CN104266770 A CN 104266770A CN 201410532426 A CN201410532426 A CN 201410532426A CN 104266770 A CN104266770 A CN 104266770A
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- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims abstract description 21
- 230000005622 photoelectricity Effects 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 19
- 238000003491 array Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000011084 recovery Methods 0.000 claims description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 230000000171 quenching effect Effects 0.000 description 3
- RLAHNGKRJJEIJL-RFZPGFLSSA-N [(2r,4r)-4-(2,6-diaminopurin-9-yl)-1,3-dioxolan-2-yl]methanol Chemical compound C12=NC(N)=NC(N)=C2N=CN1[C@H]1CO[C@@H](CO)O1 RLAHNGKRJJEIJL-RFZPGFLSSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004557 single molecule detection Methods 0.000 description 1
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Abstract
The invention relates to a near-infrared multi-photon detector. The near-infrared multi-photon detector comprises an avalanche photodiode array and a read-out chip. The avalanche photodiode array comprises a plurality of units arranged in an array, each unit comprises one avalanche photodiode made of InGaAs/InP, and all the avalanche photodiodes made of the InGaAs/InP in the avalanche photodiode array are connected with the read-out chip through In columns.
Description
Technical field
The present invention relates to photon detector, particularly a kind of near infrared photon detector.
Background technology
Single-photon detector (Single Photon Detector), because it has the detection performance of the pole low light level, has wide practical use in fields such as space flight, laser radar, quantum information, biomedicines.Photoelectricity avalanche diode (Avalanche Photon Diode, be called for short APD) be a kind of typical single-photon detector, the photoelectricity avalanche diode of Si material is researched and developed significantly in the application of visible light wave range, and at near-infrared band, the APD of InGaAs/InP material is more subject to everybody favor.Due to two low loss window that 1310nm wave band and 1550nm wave band are optical fiber, and the eye-safe of these wave bands, make the APD of InGaAs/InP receive special concern in fields such as quantum secret communication, laser ranging and laser radars.
When the bias voltage at the APD two ends of InGaAs/InP material is higher than voltage breakdown, under it works in Geiger mode angular position digitizer, in this case when a photon is absorbed, in the snowslide of APD internal trigger, a detectable current signal will be produced.The single-molecule detection device of such as InGaAs/InP materials A PD can only differentiate single photon, when once there being multiple photon to arrive, also can be taken as single photon to count, the ability namely not having multi-photon to differentiate.
Also there is the photon detector being applicable to near-infrared band in the prior art, photodiode (DAPD) is amplified as being separated, it adopts the method for carrying out respectively doubling at dynode layer to amplify separately, and then derived together by electric current, size and the photon number of electric current are directly proportional.
Summary of the invention
The object of the present invention is to provide the novel near infrared photon detector that a kind of and existing near infrared photon detector is structurally not identical.
To achieve these goals, the invention provides a kind of near infrared photon detector, comprising: photoelectricity avalanche photodiode arrays, reading chip; Wherein, described photoelectricity avalanche photodiode arrays comprises into multiple unit of array arrangement, and each unit comprises the photoelectricity avalanche diode of an InGaAs/InP material; The photoelectricity avalanche diode of each InGaAs/InP material in described photoelectricity avalanche photodiode arrays is connected with described reading chip by In post.
In technique scheme, described reading chip comprises: testing circuit, superimposed pulses circuit; Wherein, described testing circuit has multiple, the photoelectricity avalanche diode of the corresponding InGaAs/InP material of each testing circuit, described testing circuit is used for carrying out cancellation and recovery to corresponding photoelectricity avalanche diode unit, and the photoelectricity avalanche diode of described InGaAs/InP material often receives a photon, described testing circuit exports a pulse; The superimposed pulses that each testing circuit exports by described superimposed pulses circuit, final exports an amplitude and the proportional pulse of photon number.
In technique scheme, described testing circuit comprises: driving tube, comparer, the first monostalbe trigger for generation of cancellation pulse and the second monostalbe trigger for generation of reset pulse; Wherein, chip pin PAD is connected with the photoelectricity avalanche diode of an InGaAs/InP material by In post, and the output terminal of this PAD is connected to the input end of a comparer, and another input end of this comparer then inputs the REF signal as comparer discriminating voltage; The output terminal of described comparer is connected on described first monostalbe trigger, and this first monostalbe trigger is respectively with a driving tube, the second monostalbe trigger, be connected as the GATE signal input part of gate-control signal; Described second monostalbe trigger is connected with another driving tube.
In technique scheme, when GATE signal is low, described first monostalbe trigger sends cancellation pulse, make whole testing circuit be in cancellation state, when GATE signal is high, each photon triggers APD snowslide always, first monostalbe trigger sends cancellation pulse, send reset pulse every a period of time second monostalbe trigger, this process hockets, and whole testing circuit normally works.
In technique scheme, testing circuit is when normally working, after the electric current that the photoelectricity avalanche diode that PAD collects corresponding InGaAs/InP material discharges, a voltage is exported to comparer, this voltage compares with the REF signal as comparer discriminating voltage, if output voltage is higher than this voltage, be then identified as a photon; After identifying a photon, described first monostalbe trigger externally exports a pulse PULSE.
In technique scheme, described superimposed pulses circuit comprises many parallel circuits, and each parallel circuit at least includes a switch P
n, described superimposed pulses circuit also comprises a resistance, this resistance and these parallel circuit in series; The pulse PULSE that each switch in described superimposed pulses circuit exports by corresponding testing circuit controls, if the value of pulse PULSE is 1, then and switch conduction, the outside transmission current of the current source in this parallel circuit.
The invention has the advantages that:
Near infrared photon detector of the present invention can realize the detection to multi-photon, and each probe unit is separate, and can not interact, robustness is high.
Accompanying drawing explanation
Fig. 1 is the structural representation of near infrared photon detector of the present invention;
Fig. 2 is the fundamental diagram of near infrared photon detector of the present invention;
Fig. 3 is a kind of circuit implementations of the reading chip near infrared photon detector of the present invention;
Fig. 4 is the circuit diagram of the superimposed pulses circuit read in chip;
Fig. 5 is the another kind of circuit implementations of the reading chip near infrared photon detector of the present invention.
Embodiment
Now the invention will be further described by reference to the accompanying drawings.
With reference to figure 1, near infrared photon detector of the present invention comprises: photoelectricity avalanche photodiode arrays, reading chip; Wherein, described photoelectricity avalanche photodiode arrays comprises multiple unit, and each unit comprises the photoelectricity avalanche diode of an InGaAs/InP material, and the photoelectricity avalanche diode of these InGaAs/InP materials becomes array arrangement; The photoelectricity avalanche diode of each InGaAs/InP material in described photoelectricity avalanche photodiode arrays is connected with described reading chip by In post.
Fig. 2 is the fundamental diagram of near infrared photon detector of the present invention, and the matrix pattern quadrilateral in the first half in figure represents the array be made up of four photoelectricity avalanche diodes, and arrow indicates that light is incident.P in figure
0, P
1, P
2, P
3for the pulse PULSE that the testing circuit of the correspondence each photoelectricity avalanche diode unit in the reading chip of corresponding photoelectricity avalanche diode exports, OUT represents the output valve of whole near infrared photon detector.As can be seen from this figure, the amplitude exporting OUT is directly proportional to input photon number.
Below the parts of near infrared photon detector are described further.
With reference to figure 3, described reading chip comprises: testing circuit, superimposed pulses circuit.Described testing circuit is used for carrying out cancellation and recovery to corresponding photoelectricity avalanche diode unit, and a corresponding photon exports a pulse.The superimposed pulses that each testing circuit exports is exported a pulse by described superimposed pulses circuit, and amplitude and the photon number of this pulse are proportional.
Described testing circuit has multiple, a unit in the corresponding photoelectricity avalanche photodiode arrays of each testing circuit.As shown in the left-half in Fig. 3, the arrangement mode of these testing circuits is consistent with the arrangement mode of the unit in photoelectricity avalanche photodiode arrays, and the Output rusults of each testing circuit is all transferred to described superimposed pulses circuit.Right half part in figure 3, has done further instruction to the circuit structure of testing circuit.A testing circuit comprises: driving tube, comparer, the first monostalbe trigger 1 for generation of cancellation pulse and the second monostalbe trigger 2 for generation of reset pulse.Wherein, chip pin PAD is connected with a certain unit in photoelectricity avalanche photodiode arrays by In post, and the output terminal of this PAD is connected to the input end of a comparer, and another input end of this comparer then inputs REF signal; The output terminal of described comparer is connected on the first monostalbe trigger 1, and this first monostalbe trigger 1 is connected with a driving tube, the second monostalbe trigger 2, GATE signal input part respectively.Described second monostalbe trigger 2 is connected with another driving tube.
GATE signal in testing circuit as gate mode, when GATE signal is low, first monostalbe trigger 1 sends cancellation pulse, make whole testing circuit be in cancellation state, when GATE is high, each photon triggers APD snowslide always, first monostalbe trigger 1 sends cancellation pulse, send reset pulse every a period of time second monostalbe trigger 2, this process hockets, and whole testing circuit normally works.Testing circuit is when normally working, PAD exports a voltage to comparer after collecting the electric current that corresponding photoelectricity avalanche diode unit discharges, and this voltage compares with the REF signal as comparer discriminating voltage, if output voltage is higher than this voltage, be then identified as a photon.After identifying a photon, the first monostalbe trigger 1 externally exports a pulse PULSE.
Described superimposed pulses circuit has one, and as shown in Figure 4, this superimposed pulses circuit comprises many parallel circuits, and each parallel circuit at least includes a switch P
nwith a current source I
n; This superimposed pulses circuit also includes a resistance, this resistance and these parallel circuit in series.The pulse PULSE that each switch in superimposed pulses circuit exports by corresponding testing circuit controls, if the value of pulse PULSE is 1, then and switch conduction, the outside transmission current of the current source in this parallel circuit.Be easy to find out from this circuit structure, if have N number of unit inspection in photoelectricity avalanche photodiode arrays to photon, then the testing circuit having N number of correspondence sends pulse PULSE, further, the N number of parallel circuit just had in superimposed pulses circuit is switched on, thus outwards transmits N road electric current.Therefore, be directly proportional to input photon number to the ohmically voltage magnitude of parallel circuit in series in superimposed pulses circuit.
Fig. 5 is the another kind of circuit implementations reading chip, and this circuit has the function of testing circuit and superimposed pulses circuit simultaneously.In this reading chip, when photon triggers APD, snowslide output current occurs, electric current is directly at resistance R
0upper generation pressure drop completes the function of detection; Ohmically pressure drop simultaneously reduces the voltage on APD, completes the function of passive cancellation; When having multi-channel A PD to trigger simultaneously, multichannel electric current outputs to R simultaneously
0, at R
0produce the voltage be directly proportional with photon number, complete the function of superimposed pulses.Because this reading chip can realize cancellation without the need to cancellation pulse, therefore this reading chip is also referred to as passive quenching circuit, and the advantage of this circuit is that circuit structure is simple, is beneficial to High Density Integration.And the reading chip shown in Fig. 3 needs cancellation pulse to realize cancellation, therefore this reading chip is also referred to as initiatively quenching circuit, and initiatively the advantage of quenching circuit is that speed is fast.
It should be noted last that, above embodiment is only in order to illustrate technical scheme of the present invention and unrestricted.Although with reference to embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that, modify to technical scheme of the present invention or equivalent replacement, do not depart from the spirit and scope of technical solution of the present invention, it all should be encompassed in the middle of right of the present invention.
Claims (6)
1. a near infrared photon detector, is characterized in that, comprising: photoelectricity avalanche photodiode arrays, reading chip; Wherein, described photoelectricity avalanche photodiode arrays comprises into multiple unit of array arrangement, and each unit comprises the photoelectricity avalanche diode of an InGaAs/InP material; The photoelectricity avalanche diode of each InGaAs/InP material in described photoelectricity avalanche photodiode arrays is connected with described reading chip by In post.
2. near infrared photon detector according to claim 1, is characterized in that, described reading chip comprises: testing circuit, superimposed pulses circuit; Wherein, described testing circuit has multiple, the photoelectricity avalanche diode of the corresponding InGaAs/InP material of each testing circuit, described testing circuit is used for carrying out cancellation and recovery to corresponding photoelectricity avalanche diode unit, and the photoelectricity avalanche diode of described InGaAs/InP material often receives a photon, described testing circuit exports a pulse; The superimposed pulses that each testing circuit exports by described superimposed pulses circuit, final exports an amplitude and the proportional pulse of photon number.
3. near infrared photon detector according to claim 2, it is characterized in that, described testing circuit comprises: driving tube, comparer, the first monostalbe trigger (1) for generation of cancellation pulse and the second monostalbe trigger (2) for generation of reset pulse; Wherein, chip pin PAD is connected with the photoelectricity avalanche diode of an InGaAs/InP material by In post, and the output terminal of this PAD is connected to the input end of a comparer, and another input end of this comparer then inputs the REF signal as comparer discriminating voltage; The output terminal of described comparer is connected on described first monostalbe trigger (1), and this first monostalbe trigger (1) is respectively with a driving tube, the second monostalbe trigger (2), be connected as the GATE signal input part of gate-control signal; Described second monostalbe trigger (2) is connected with another driving tube.
4. near infrared photon detector according to claim 3, it is characterized in that, when GATE signal is low, described first monostalbe trigger (1) sends cancellation pulse, make whole testing circuit be in cancellation state always, when GATE signal is high, each photon triggers APD snowslide, first monostalbe trigger (1) sends cancellation pulse, reset pulse is sent every a period of time second monostalbe trigger (2), this process hockets, and whole testing circuit normally works.
5. near infrared photon detector according to claim 3, it is characterized in that, testing circuit is when normally working, after the electric current that the photoelectricity avalanche diode that PAD collects corresponding InGaAs/InP material discharges, a voltage is exported to comparer, this voltage compares with the REF signal as comparer discriminating voltage, if output voltage is higher than this voltage, is then identified as a photon; After identifying a photon, described first monostalbe trigger (1) externally exports a pulse PULSE.
6. near infrared photon detector according to claim 2, it is characterized in that, described superimposed pulses circuit comprises many parallel circuits, and each parallel circuit at least includes a switch P n, described superimposed pulses circuit also comprises a resistance, this resistance and these parallel circuit in series; The pulse PULSE that each switch in described superimposed pulses circuit exports by corresponding testing circuit controls, if the value of pulse PULSE is 1, then and switch conduction, the outside transmission current of the current source in this parallel circuit.
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| CN201410532426.1A CN104266770B (en) | 2014-10-10 | 2014-10-10 | Near-infrared multi-photon detector |
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| CN201410532426.1A CN104266770B (en) | 2014-10-10 | 2014-10-10 | Near-infrared multi-photon detector |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106124069A (en) * | 2016-08-29 | 2016-11-16 | 中国科学院苏州生物医学工程技术研究所 | A kind of multi-photon number system, method and device |
| CN107024286A (en) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | Control circuit and array architecture applied to single-photon detector |
| CN111879422A (en) * | 2020-09-03 | 2020-11-03 | 传周半导体科技(上海)有限公司 | Near-infrared single photon detector array and system based on optical fiber bundle coupling |
| WO2022061819A1 (en) * | 2020-09-27 | 2022-03-31 | 深圳市大疆创新科技有限公司 | Receiving chip, distance measurement apparatus, and movable platform |
| WO2022165837A1 (en) * | 2021-02-08 | 2022-08-11 | 深圳市大疆创新科技有限公司 | Back-illuminated avalanche photon diode chip and preparation method therefor, and receiving chip, ranging apparatus and movable platform |
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| US20020148967A1 (en) * | 2001-04-16 | 2002-10-17 | Iwanczyk Jan S. | Junction-side illuminated silicon detector arrays |
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2014
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Patent Citations (3)
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| US20020148967A1 (en) * | 2001-04-16 | 2002-10-17 | Iwanczyk Jan S. | Junction-side illuminated silicon detector arrays |
| CN102333195A (en) * | 2011-09-23 | 2012-01-25 | 东南大学 | Active and passive imaging readout circuit working at linear mode APD (Avalanche Photo Diode) array |
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Non-Patent Citations (2)
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| MARK A.ITZLER ET AL.: "InP-based Geiger-mode avalanche photodiode arrays for three-dimensional imaging at 1.06 um", 《SPIE PROCEEDINGS》 * |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107024286A (en) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | Control circuit and array architecture applied to single-photon detector |
| CN106124069A (en) * | 2016-08-29 | 2016-11-16 | 中国科学院苏州生物医学工程技术研究所 | A kind of multi-photon number system, method and device |
| CN106124069B (en) * | 2016-08-29 | 2023-02-10 | 中国科学院苏州生物医学工程技术研究所 | Multi-photon counting system, method and device |
| CN111879422A (en) * | 2020-09-03 | 2020-11-03 | 传周半导体科技(上海)有限公司 | Near-infrared single photon detector array and system based on optical fiber bundle coupling |
| WO2022061819A1 (en) * | 2020-09-27 | 2022-03-31 | 深圳市大疆创新科技有限公司 | Receiving chip, distance measurement apparatus, and movable platform |
| WO2022165837A1 (en) * | 2021-02-08 | 2022-08-11 | 深圳市大疆创新科技有限公司 | Back-illuminated avalanche photon diode chip and preparation method therefor, and receiving chip, ranging apparatus and movable platform |
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| CN104266770B (en) | 2017-05-17 |
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