CN104266770B - Near-infrared multi-photon detector - Google Patents
Near-infrared multi-photon detector Download PDFInfo
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- CN104266770B CN104266770B CN201410532426.1A CN201410532426A CN104266770B CN 104266770 B CN104266770 B CN 104266770B CN 201410532426 A CN201410532426 A CN 201410532426A CN 104266770 B CN104266770 B CN 104266770B
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Abstract
The invention relates to a near-infrared multi-photon detector. The near-infrared multi-photon detector comprises an avalanche photodiode array and a read-out chip. The avalanche photodiode array comprises a plurality of units arranged in an array, each unit comprises one avalanche photodiode made of InGaAs/InP, and all the avalanche photodiodes made of the InGaAs/InP in the avalanche photodiode array are connected with the read-out chip through In columns.
Description
Technical field
The present invention relates to photon detector, more particularly to a kind of near-infrared photon detector.
Background technology
Single-photon detector (Single Photon Detector) has the detection performance of pole dim light due to it, in boat
My god, the field such as laser radar, quantum information, biomedicine has wide practical use.Photoelectricity avalanche diode (Avalanche
Photon Diode, abbreviation APD) it is a kind of typical single-photon detector, the photoelectricity avalanche diode of Si materials is in visible ray
The application of wave band is significantly researched and developed, and near infrared band, the APD of InGaAs/InP materials is more subject to everybody
Favor.Because 1310nm wave bands and 1550nm wave bands are two low loss windows of optical fiber, and these wave bands eye-safe
Property so that the APD of InGaAs/InP receives special pass in fields such as quantum secret communication, laser ranging and laser radars
Note.
When the bias voltage at the APD two ends of InGaAs/InP materials is higher than breakdown voltage, it is worked under Geiger mode angular position digitizer,
In this case when a photon is absorbed, a detectable electric current letter will be produced in APD internal trigger snowslides
Number.The single-molecule detection device of such as InGaAs/InP materials As PD can only differentiate single photon, be arrived when once there is multiple photons
When, can also be taken as single photon to count, i.e., the ability differentiated without multi-photon.
The photon detector suitable near infrared band is there is also in the prior art, is such as separated and is amplified photodiode
(DAPD), it is each amplified using the method doubled respectively in dynode layer, then derives to come together by electric current, electric current
Size and number of photons be directly proportional.
The content of the invention
It is an object of the invention to provide one kind and existing near-infrared photon detector not identical in structure
New near-infrared photon detector.
To achieve these goals, the invention provides a kind of near-infrared photon detector, including：The pole of photoelectricity snowslide two
Pipe array, reading chip；Wherein, the photoelectricity avalanche photodiode arrays include into multiple units of array arrangement, each unit
Including a photoelectricity avalanche diode for InGaAs/InP materials；Each InGaAs/ in the photoelectricity avalanche photodiode arrays
The photoelectricity avalanche diode of InP materials is connected by In posts with the reading chip.
In above-mentioned technical proposal, the reading chip includes：Detection circuit, superimposed pulses circuit；Wherein, the detection electricity
There is multiple on road, and each detection circuit one photoelectricity avalanche diode of InGaAs/InP materials of correspondence, the detection circuit is used
In corresponding photoelectricity avalanche diode unit is quenched and is restored, and the InGaAs/InP materials photoelectricity snowslide two
Pole pipe often receives a photon, one pulse of the detection circuit output；Each is detected circuit institute by the superimposed pulses circuit
The superimposed pulses of output, one amplitude of final output and the proportional pulse of number of photons.
In above-mentioned technical proposal, the detection circuit includes：Driving tube, comparator, for produce be quenched the first of pulse
Monostable flipflop and the second monostable flipflop for producing reset pulse；Wherein, chip pin PAD by In posts with
One photoelectricity avalanche diode of InGaAs/InP materials is connected, and the output end of the PAD is connected to the input of a comparator, should
Another input of comparator is then input into the REF signal as comparator discriminating voltage；The output end of the comparator is connected to
On first monostable flipflop, first monostable flipflop respectively with a driving tube, the second monostable flipflop, conduct
The GATE signal input parts of gate-control signal are connected；Second monostable flipflop is connected with another driving tube.
In above-mentioned technical proposal, when GATE signals are low, first monostable flipflop sends and pulse is quenched so that
Whole detection circuit is constantly in cancellation state, when GATE signals are high, the triggering APD snowslides of each photon, the first monostable
Trigger is sent and pulse is quenched, and reset pulse is sent every the second monostable flipflop of a period of time, and this process is alternately, whole
Individual detection circuit normal work.
In above-mentioned technical proposal, in normal work, PAD collects corresponding InGaAs/InP materials to detection circuit
After the electric current that photoelectricity avalanche diode is discharged, to comparator one voltage of output, the voltage and as comparator discriminating voltage
REF signal is compared, if output voltage is higher than the voltage, is identified as a photon；It is described after a photon is identified
First monostable flipflop is to one pulse PULSE of outside output.
In above-mentioned technical proposal, the superimposed pulses circuit includes a plurality of parallel circuit, is at least wrapped on each parallel circuit
A switch P is includedn, the superimposed pulses circuit is also including a resistance, the resistance and these parallel circuit in series；The pulse is folded
The pulse PULSE controls that each switch in power-up road is exported by corresponding detection circuit, if the value of pulse PULSE is 1,
Then switch conduction, the current source in the parallel circuit outwards transmits electric current.
The advantage of the invention is that：
Near-infrared photon detector of the invention can realize the detection to multi-photon, and each probe unit is mutually only
It is vertical, will not interact, robustness is high.
Brief description of the drawings
Fig. 1 is the structural representation of near-infrared photon detector of the invention；
Fig. 2 is the fundamental diagram of near-infrared photon detector of the invention；
Fig. 3 is a kind of circuit implementations of the reading chip in near-infrared photon detector of the invention；
Fig. 4 is the circuit diagram for reading the superimposed pulses circuit in chip；
Fig. 5 is another circuit implementations of the reading chip in near-infrared photon detector of the invention.
Specific embodiment
In conjunction with accompanying drawing, the invention will be further described.
With reference to Fig. 1, near-infrared photon detector of the invention includes：Photoelectricity avalanche photodiode arrays, reading chip；Its
In, the photoelectricity avalanche photodiode arrays include multiple units, and each unit includes a photoelectricity snow for InGaAs/InP materials
Diode is collapsed, the photoelectricity avalanche diode of these InGaAs/InP materials is into array arrangement；The photoelectricity avalanche photodiode arrays
In each InGaAs/InP material photoelectricity avalanche diode by In posts with it is described reading chip be connected.
Fig. 2 is the fundamental diagram of near-infrared photon detector of the invention, the matrix pattern in top half in figure
Quadrangle represents the array being made up of four photoelectricity avalanche diodes, and arrow indicates that light is incident.P in figure0、P1、P2、P3For
The arteries and veins of the detection circuit output of correspondence each the photoelectricity avalanche diode unit read in chip of correspondence photoelectricity avalanche diode
PULSE is rushed, OUT represents the output valve of whole near-infrared photon detector.From this figure, it can be seen that output OUT amplitude with
Input number of photons is directly proportional.
The part to near-infrared photon detector is described further below.
With reference to Fig. 3, the reading chip includes：Detection circuit, superimposed pulses circuit.It is described detection circuit be used for it is right
The photoelectricity avalanche diode unit answered is quenched and is restored, and one photon of correspondence exports a pulse.The superimposed pulses electricity
The superimposed pulses that each detection circuit is exported are exported a pulse by road, and the amplitude and number of photons of the pulse are proportional.
The detection circuit has multiple, a unit in each detection circuit correspondence photoelectricity avalanche photodiode arrays.Such as
Shown in left-half in Fig. 3, these detect the unit in the arrangement mode and photoelectricity avalanche photodiode arrays of circuits
Arrangement mode is consistent, and the output result of each detection circuit is all transferred to described superimposed pulses circuit.The right side in figure 3
Half part, the circuit structure to detecting circuit has done further instruction.One detection circuit includes：Driving tube, comparator, use
In producing the first monostable flipflop 1 and the second monostable flipflop 2 for producing reset pulse that pulse is quenched.Its
In, chip pin PAD is connected by In posts with a certain unit in photoelectricity avalanche photodiode arrays, the output end connection of the PAD
To the input of a comparator, another input of the comparator is then input into REF signal；The output end of the comparator is connected to
On first monostable flipflop 1, first monostable flipflop 1 respectively with a driving tube, the second monostable flipflop 2, GATE
Signal input part is connected.Second monostable flipflop 2 is connected with another driving tube.
GATE signals as gate mode in circuit is detected, when GATE signals are low, send out by the first monostable flipflop 1
Go out pulse is quenched so that whole detection circuit is constantly in cancellation state, when GATE is high, the triggering APD snowslides of each photon,
First monostable flipflop 1 sends and pulse is quenched, and sends reset pulse every the second monostable flipflop 2 of a period of time, this mistake
Journey is alternately, whole to detect circuit normal work.In normal work, PAD collects corresponding photoelectricity snow to detection circuit
After collapsing the electric current that diode is discharged, a voltage, the voltage and the REF as comparator discriminating voltage are exported to comparator
Signal is compared, if output voltage is higher than the voltage, is identified as a photon.After a photon is identified, first is single
Steady state trigger 1 is to one pulse PULSE of outside output.
The superimposed pulses circuit has one, as shown in figure 4, the superimposed pulses circuit includes a plurality of parallel circuit, it is each
A switch P is at least included on parallel circuitnWith a current source In；The superimposed pulses circuit also includes a resistance, the resistance with
These parallel circuit in series.The pulse PULSE that each switch in superimposed pulses circuit is exported by corresponding detection circuit
Control, if the value of pulse PULSE is 1, switch conduction, the current source in the parallel circuit outwards transmits electric current.From the circuit
If having N number of corresponding inspection it is easy to see that there is N number of unit to detect photon in photoelectricity avalanche photodiode arrays in structure
Slowdown monitoring circuit sends pulse PULSE, and further, the N number of parallel circuit just having in superimposed pulses circuit is switched on, so that outwards
Transmission N roads electric current.Therefore, in superimposed pulses circuit with the ohmically voltage magnitude of parallel circuit in series and input number of photons into
Direct ratio.
Fig. 5 is another circuit implementations for reading chip, and the circuit has detection circuit with superimposed pulses electricity simultaneously
The function on road.In this reading chip, when photon triggering APD occurs snowslide output current, electric current is directly in resistance R0Upper product
Raw pressure drop completes the function of detection；Ohmically pressure drop simultaneously reduces the voltage on APD, completes the passive function being quenched；
When having multi-channel A PD to trigger simultaneously, multichannel electric current is exported to R simultaneously0, in R0The voltage for producing one and number of photons to be directly proportional, it is complete
Into the function of superimposed pulses.Be capable of achieving to be quenched because the reading chip need not be quenched pulse, thus the reading chip also by
Referred to as passive quenching circuit, the advantage of this circuit is simple circuit structure, beneficial to High Density Integration.And the reading core shown in Fig. 3
Piece needs that pulse is quenched to realize being quenched, therefore the reading chip is also referred to as active quenching circuit, active quenching circuit it is excellent
Point is fast speed.
It should be noted last that, the above embodiments are merely illustrative of the technical solutions of the present invention and it is unrestricted.Although ginseng
The present invention has been described in detail according to embodiment, it will be understood by those within the art that, to technical side of the invention
Case is modified or equivalent, and without departure from the spirit and scope of technical solution of the present invention, it all should cover in the present invention
Right in the middle of.
Claims (5)
1. a kind of near-infrared photon detector, it is characterised in that including：Photoelectricity avalanche photodiode arrays, reading chip；Its
In, the photoelectricity avalanche photodiode arrays include into multiple units of array arrangement, and each unit includes an InGaAs/InP
The photoelectricity avalanche diode of material；The photoelectricity snowslide two of each InGaAs/InP material in the photoelectricity avalanche photodiode arrays
Pole pipe is connected by In posts with the reading chip；
The reading chip includes：Detection circuit, superimposed pulses circuit；Wherein, the detection circuit has multiple, each detection
Circuit one photoelectricity avalanche diode of InGaAs/InP materials of correspondence, the detection circuit is used for corresponding photoelectricity snowslide
Diode is quenched and is restored, and the photoelectricity avalanche diode of the InGaAs/InP materials often receives a photon,
Described detection one pulse of circuit output；The superimposed pulses that the superimposed pulses circuit is exported each detection circuit, finally
Output one amplitude and the proportional pulse of number of photons.
2. near-infrared photon detector according to claim 1, it is characterised in that the detection circuit includes：Drive
Pipe, comparator, the first monostable flipflop (1) that pulse is quenched for producing and the second of reset pulse monostable for producing
State trigger (2)；Wherein, chip pin PAD is connected by In posts with the photoelectricity avalanche diode of an InGaAs/InP material,
The output end of the PAD is connected to the input of a comparator, and another input of the comparator is then input into and differentiates as comparator
The REF signal of voltage；The output end of the comparator is connected on first monostable flipflop (1), first monostable
Trigger (1) is connected respectively with a driving tube, the second monostable flipflop (2), as the GATE signal input parts of gate-control signal；
Second monostable flipflop (2) is connected with another driving tube.
3. near-infrared photon detector according to claim 2, it is characterised in that when GATE signals for it is low when, it is described
First monostable flipflop (1) sends and pulse is quenched so that whole detection circuit is constantly in cancellation state, when GATE signals are
Gao Shi, each photon triggering APD snowslides, the first monostable flipflop (1) sends and pulse is quenched, every the second monostable of a period of time
Trigger (2) sends reset pulse, and this process is alternately, whole to detect circuit normal work.
4. near-infrared photon detector according to claim 2, it is characterised in that detection circuit in normal work,
After the electric current that the photoelectricity avalanche diode that PAD collects corresponding InGaAs/InP materials is discharged, one is exported to comparator
Voltage, the voltage is compared with as the REF signal of comparator discriminating voltage, if output voltage is higher than the voltage, recognizes
It is a photon；After a photon is identified, first monostable flipflop (1) is to one pulse PULSE of outside output.
5. near-infrared photon detector according to claim 1, it is characterised in that the superimposed pulses circuit includes many
Bar parallel circuit, at least includes a switch P on each parallel circuitn, the superimposed pulses circuit is also including a resistance, the electricity
Resistance and these parallel circuit in series；The arteries and veins that each switch in the superimposed pulses circuit is exported by corresponding detection circuit
PULSE controls are rushed, if the value of pulse PULSE is 1, switch conduction, the current source in the parallel circuit outwards transmits electric current.
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| CN201410532426.1A CN104266770B (en) | 2014-10-10 | 2014-10-10 | Near-infrared multi-photon detector |
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| CN201410532426.1A CN104266770B (en) | 2014-10-10 | 2014-10-10 | Near-infrared multi-photon detector |
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| CN104266770B true CN104266770B (en) | 2017-05-17 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107024286A (en) * | 2016-01-29 | 2017-08-08 | 苏州超锐微电子有限公司 | Control circuit and array architecture applied to single-photon detector |
| CN106124069B (en) * | 2016-08-29 | 2023-02-10 | 中国科学院苏州生物医学工程技术研究所 | Multi-photon counting system, method and device |
| CN111879422A (en) * | 2020-09-03 | 2020-11-03 | 传周半导体科技(上海)有限公司 | Near-infrared single photon detector array and system based on optical fiber bundle coupling |
| CN114556559A (en) * | 2020-09-27 | 2022-05-27 | 深圳市大疆创新科技有限公司 | Receiving chip, distance measuring device and movable platform |
| WO2022165837A1 (en) * | 2021-02-08 | 2022-08-11 | 深圳市大疆创新科技有限公司 | Back-illuminated avalanche photon diode chip and preparation method therefor, and receiving chip, ranging apparatus and movable platform |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102333195A (en) * | 2011-09-23 | 2012-01-25 | 东南大学 | Active and passive imaging readout circuit working at linear mode APD (Avalanche Photo Diode) array |
| CN103207024A (en) * | 2013-02-27 | 2013-07-17 | 南京邮电大学 | Analog signal reading method for single photon avalanche diode detector |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US6713768B2 (en) * | 2001-04-16 | 2004-03-30 | Photon Imaging, Inc. | Junction-side illuminated silicon detector arrays |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102333195A (en) * | 2011-09-23 | 2012-01-25 | 东南大学 | Active and passive imaging readout circuit working at linear mode APD (Avalanche Photo Diode) array |
| CN103207024A (en) * | 2013-02-27 | 2013-07-17 | 南京邮电大学 | Analog signal reading method for single photon avalanche diode detector |
Non-Patent Citations (2)
| Title |
|---|
| Arrays of InP-based avalanche photodiodes for photon counting;Simon Verghese et al.;《IEEE JUORNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS》;20070831;第13卷(第4期);第870页II.A. Detector Design，第873页III.B.1.55um APDs，图1、23、26 * |
| InP-based Geiger-mode avalanche photodiode arrays for three-dimensional imaging at 1.06 um;Mark A.Itzler et al.;《SPIE Proceedings》;20090429;第7320卷;全文 * |
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Address after: 100190 No. two south of Zhongguancun, Haidian District, Beijing 1 Patentee after: NATIONAL SPACE SCIENCE CENTER, CAS Address before: 100190 No. two south of Zhongguancun, Haidian District, Beijing 1 Patentee before: NATIONAL SPACE SCIENCE CENTER, CHINESE ACADEMY OF SCIENCES |
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