CN106757316A - A kind of single crystal growing furnace - Google Patents
A kind of single crystal growing furnace Download PDFInfo
- Publication number
- CN106757316A CN106757316A CN201710224908.4A CN201710224908A CN106757316A CN 106757316 A CN106757316 A CN 106757316A CN 201710224908 A CN201710224908 A CN 201710224908A CN 106757316 A CN106757316 A CN 106757316A
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- Prior art keywords
- crucible
- pot
- weighing
- crystal
- lifting
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
This application discloses a kind of single crystal growing furnace, including main furnace chamber, concubine, crucible, crucible lifting mechanism and crystal pull mechanism, also include：Weighing mechanism, is arranged in crystal pull mechanism, and the rope of crystal pull mechanism is carried on the Weighing mechanism, for weighing crystal weight；Pot is with than adjusting means, control to be connected with Weighing mechanism and crucible lifting mechanism, for the crystal weight according to Weighing mechanism weighed current time, the charging gross weight of crucible and crucible inside dimension obtain the theoretical pot at current time with than, and according to theoretical pot with the lifting speed than adjusting crucible lifting mechanism, make the actual pot of crucible with than close to theory pot with than.This single crystal growing furnace is by increasing Weighing mechanism and pot with than adjusting means, using the charging gross weight in crucible and the real-time crystal weight for weighing, the remaining material weight in crucible is obtained, carrys out the lifting speed of real-time dynamic control crucible lifting mechanism, it is to avoid pot is with than too small or excessive influence crystal growth.
Description
Technical field
The present invention relates to technical field of crystal growth, more particularly to a kind of single crystal growing furnace.
Background technology
Single crystal growing furnace be one kind in inert gas environment, the polycrystalline materials such as polysilicon are melted with graphite heater, with straight
The equipment that daraf(reciprocal of farad) grows dislocation-free monocrystalline.
Existing single crystal growing furnace mainly includes frame, main furnace chamber, concubine, crystal pull mechanism, crucible and crucible lifting mechanism.
Concubine is connected on main furnace chamber, and crucible is arranged in main furnace chamber, and the bottom of crucible is driven by crucible lifting mechanism and lifted；Crystal
Shift mechanism is arranged at concubine top, and the rope of crystal pull mechanism enters in main furnace chamber through concubine, young crystalline substance is carried
Draw generation crystal bar.Because during crystal growth, with the continuous lifting of crystal pull mechanism, the molten state in crucible is former
Material forms solid-state crystal bar at young crystalline substance, and now, the solution in crucible constantly reduces, and liquid level declines, in order to ensure continuing for crystal bar
Growth, it is necessary to the situation according to remaining material in technological requirement and crucible adjusts pot with than pot in single crystal growing furnace crystal growing process
With than being the ratio between the translational speed of crucible and the pull rate of crystal pull mechanism.
At present use pot with than be by formula calculate, draw crystal bar per segment length growth pot with than.Growing
According to pot in table with the speed than controlling crucible rising according to the pull rate of crystal pull mechanism in journey, according to crystal growth
Actual conditions carry out artificial modification pot of intervening manually with than coefficient, correcting the growth course of crystal.But in actual production process, by
Changed in the crystal diameter of growth, cause to occur actual pot with than excessive or too small, influenceing the normal growth of crystal.
In sum, how to solve the problems, such as that pot, with more inaccurate than adjusting, becomes those skilled in the art urgently to be resolved hurrily
Problem.
The content of the invention
In view of this, it is an object of the invention to provide a kind of single crystal growing furnace, with real-time dynamic regulation pot with than, it is to avoid pot with
Than excessive or too small influence crystal growth.
To reach above-mentioned purpose, the present invention provides following technical scheme：
A kind of single crystal growing furnace, including main furnace chamber, concubine, crucible, crucible lifting mechanism and crystal pull mechanism, also include：
Weighing mechanism, is arranged in the crystal pull mechanism, and the rope of the crystal pull mechanism is carried on described
On Weighing mechanism, for weighing crystal weight；
Pot with the Weighing mechanism and the crucible lifting mechanism with than adjusting means, controlling to be connected, for according to institute
State the inside dimension of the crystal weight at Weighing mechanism weighed current time, the charging gross weight of the crucible and the crucible
Obtain the theoretical pot at current time with than, and according to the theoretical pot with the lifting speed than adjusting the crucible lifting mechanism,
Make the actual pot of the crucible with than close to the theoretical pot with than.
Preferably, in above-mentioned single crystal growing furnace, the Weighing mechanism includes：
Support, in the crystal pull mechanism；
Weigh device, install on the bracket, for weighing crystal weight, the device of weighing is with the pot with than adjusting
Regulating device control connection；
Bearing part, be supported in it is described weigh on device, for carrying the rope.
Preferably, in above-mentioned single crystal growing furnace, the bearing part is pulley, and the pulley rotation is supported in the weighing apparatus
On part, the rope bypasses the pulley.
Preferably, in above-mentioned single crystal growing furnace, the quantity of the device of weighing is at least two, is respectively supported at described holding
The two ends of holder.
Preferably, in above-mentioned single crystal growing furnace, the device of weighing is for electronic scale or weight sensor.
Preferably, in above-mentioned single crystal growing furnace, the rope is tungsten rope.
Preferably, in above-mentioned single crystal growing furnace, the crystal pull mechanism includes lifting casing, lifting drive device and carries
Drawstring, the lifting drive device is installed in the stretching tank body, and the rope is connected with the lifting drive device, institute
Weighing mechanism is stated to be installed in the stretching tank body.
Preferably, in above-mentioned single crystal growing furnace, the pot than adjusting means with including：
Crystal weight acquiring unit, the crystal weight for obtaining current time；
Remaining material weight computing unit, obtains for subtracting the crystal weight at current time according to the charging gross weight
To the remaining material weight in current time crucible；
Remaining material volume conversion unit, for the remaining material weight in the crucible according to current time divided by silicon 1450
DEG C when density, obtain the remaining material volume in the crucible；
Remaining material liquid level determining unit, for according to the remaining material volume and the inside dimension of the crucible in the crucible
Obtain the liquid level position in the crucible at current time；
Pot with than computing unit, for according to the liquid level position in the crucible and to should liquid level position computing formula
Obtain the theoretical pot at current time with than；
Crucible speed regulation unit, for the theoretical pot according to current time with than adjusting the crucible lifting mechanism
Lifting speed, make the actual pot at the current time of the crucible with than close to the theoretical pot with than.
Preferably, in above-mentioned single crystal growing furnace, the internal structure of the crucible from top to bottom includes column body segment, circular arc successively
Section and bottom stage；
The remaining material liquid level determining unit is used to judge the liquid level position described according to the height of liquid level position
In the column body segment of crucible, arc section or bottom stage；
The pot is based on the computing formula with corresponding to than computing unit by the crucible section according to where the liquid level position
Calculation obtain the theoretical pot at current time with than.
Preferably, in above-mentioned single crystal growing furnace, the crucible speed regulation unit includes：
Pot with than deviation computing module, according to current time actual pot with than subtract current time theoretical pot with than,
The pot at current time is obtained with than deviation；
Crucible speed adjustment module, if the pot is with being on the occasion of the lifting speed for adjusting the crucible reduces than deviation；
If with being negative value than deviation, the lifting speed for adjusting the crucible increases the pot.
Compared with prior art, the beneficial effects of the invention are as follows：
The present invention provide single crystal growing furnace in, including main furnace chamber, concubine, crucible, crucible lifting mechanism, crystal pull mechanism,
, with than adjusting means, Weighing mechanism is arranged in crystal pull mechanism, the rope of crystal pull mechanism holds for Weighing mechanism and pot
It is loaded on Weighing mechanism, for weighing crystal weight；Pot with Weighing mechanism and crucible lifting mechanism than adjusting means with controlling
Connection, for the crystal weight according to Weighing mechanism weighed current time, the charging gross weight of crucible and the inside of crucible
Size obtains the theoretical pot at current time with than and making earthenware with the lifting speed than adjusting crucible lifting mechanism according to theoretical pot
The actual pot of crucible with than close to theory pot with than.Single crystal growing furnace in the application is by increasing Weighing mechanism and pot with being filled than regulation
Put, using the charging gross weight in crucible and the real-time crystal weight for weighing, the remaining material weight in crucible is obtained, to move in real time
State controls the lifting speed of crucible lifting mechanism, it is to avoid pot than too small or excessive influence crystal 3 with growing.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of structural representation of single crystal growing furnace provided in an embodiment of the present invention；
Fig. 2 is a kind of mounting structure schematic diagram of the Weighing mechanism of single crystal growing furnace provided in an embodiment of the present invention；
Fig. 3 is a kind of operation principle schematic diagram of single crystal growing furnace provided in an embodiment of the present invention；
Fig. 4 is a kind of structural representation of the crucible of single crystal growing furnace provided in an embodiment of the present invention.
Wherein, 1 be crystal pull mechanism, 11 be rope, 12 for lifting casing, 13 for lifting drive device, 2 for pair
Room, 3 be crystal, 4 be main furnace chamber, 5 be crucible, 51 be column body segment, 52 be arc section, 53 be bottom stage, 6 be crucible hoister
Structure, 7 be Weighing mechanism, 71 be bearing part, 72 for weigh device, 73 be support.
Specific embodiment
Core of the invention there is provided a kind of single crystal growing furnace, can in real time dynamic regulation pot with than, it is to avoid pot is with than excessive
Or too small influence crystal growth.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1-Fig. 3 is refer to, a kind of single crystal growing furnace, including main furnace chamber 4, concubine 2, crucible 5, earthenware is the embodiment of the invention provides
Crucible hoisting mechanism 6, crystal pull mechanism 1, Weighing mechanism 7 and pot are with than adjusting means.Wherein, concubine 2 is connected to main furnace chamber 4
On, crucible 5 is arranged in main furnace chamber 4, and the bottom of crucible 5 drives lifting by crucible lifting mechanism 6；Crystal pull mechanism 1 sets
The top of concubine 2 is placed in, the rope 11 of crystal pull mechanism 1 enters in main furnace chamber 4 through concubine 2, and lifting life is carried out to young crystalline substance
Into crystal bar；Silicon material of the crucible 5 built with melting.
Weighing mechanism 7 is arranged in crystal pull mechanism 1, and the rope 11 of crystal pull mechanism 1 is carried on described weighing
In mechanism 7, for weighing crystal weight.
Pot with controlling to be connected with Weighing mechanism 7 and crucible lifting mechanism 6 than adjusting means, for according to Weighing mechanism 7
The inside dimension of the crystal weight at weighed current time, the charging gross weight of crucible 5 and crucible 5 obtains the reason at current time
By pot with than and according to theoretical pot with the lifting speed than adjusting crucible lifting mechanism 6, making the actual pot of crucible 5 with than close
Theoretical pot with than.
Single crystal growing furnace in the application increased Weighing mechanism 7 and pot with than adjusting means, being weighed in real time by Weighing mechanism 7
The crystal weight of growth, using the charging gross weight in crucible 5 and the real-time crystal weight for weighing, obtains the residue in crucible 5
Material weight, due to the internal structure of crucible 5, the difference of remaining material weight causes decline of the melt liquid level in crucible 5
Speed is different, therefore, position of the liquid level in crucible is obtained by remaining material weight, position is different, pot with than calculation
Difference, the single crystal growing furnace can form a pot according to the lifting speed of the real-time dynamic control crucible lifting mechanism 6 of remaining material weight
With than closed-loop control, making actual pot with than close to theory calls so that crystal 3 controls more to stablize, it is to avoid pot is with than too small
Or excessive influence crystal 3 grows.
As shown in Fig. 2 present embodiments providing a kind of specific Weighing mechanism 7, it includes support 73, weigh the and of device 72
Bearing part 71.Wherein, support 73 is arranged in crystal pull mechanism 1；Device 72 of weighing is arranged on support 73, device 72 of weighing
With pot with being connected than adjusting means control, for weighing crystal weight and to pot with sending crystal weight data than adjusting means；
Bearing part 71 is supported in weighs on device 72, for carrying rope 11, the end lifting crystal 3 of rope 11, rope 11
Upper end can ride on bearing part 71, and be connected with the lifting drive device 13 of crystal pull mechanism 1.
During work, crystal pull mechanism 1 by rope 11 lift crystal 3 when, because rope 11 is carried on carrying
On part 71, therefore, the weight of whole crystal 3 is pressed on bearing part 71, and bearing part 71 is arranged on and weighs on device 72, therefore,
Device 72 of weighing can weigh crystal weight.The real-time crystal weight for weighing is sent to pot with being filled than regulation by device 72 of weighing
Put, pot according to the inside dimension of crystal weight, the charging gross weight of crucible 5 and crucible 5 than adjusting means with being calculated currently
The theoretical pot at moment is with than according to theoretical pot with the lifting speed than adjusting crucible lifting mechanism 6, so as to adjust carrying for crucible 5
Lifting speed, makes the actual pot of crucible 5 with than approaching theory pot with than so as to avoid pot with than excessive or too small influence crystal 3
Growth.
Used as optimization, in the present embodiment, bearing part 71 is pulley, and pulley rotation is supported in weighs on device 72, lifting
Rope 11 bypasses pulley.Pulley can reduce the resistance of rope 11.Certainly, bearing part 71 can also be polished rod, polished rod rotate or
It is fixedly supported to and weighs on device 72.
In the present embodiment, weigh device 72 quantity at least two, preferably two, be respectively supported at bearing part 71
Two ends, make bearing capacity more uniform.Certainly, weigh device 72 can also for one, three etc. more, as long as can realize
Weigh.
In the present embodiment, device 72 of weighing is electronic scale or weight sensor, as long as it is concurrent to weigh crystal weight
Send crystal weight information to pot with than adjusting means.
Further, rope 11 is tungsten rope, and the heat-resisting quantity of tungsten rope is strong, and is not involved in reaction.It is, of course, also possible to using
The rope 11 of other materials, it is not limited to the situation cited by the present embodiment.
As shown in Fig. 2 in the present embodiment, crystal pull mechanism 1 includes lifting casing 12, lifting drive device 13 and carries
Drawstring 11, lifting drive device 13 is installed in lifting casing 12, and rope 11 is connected with lifting drive device 13, Weighing mechanism
7 are installed in lifting casing 12.Weighing mechanism 7 is installed in lifting casing 12, so as to protect Weighing mechanism 7 not receive external rings
Border is damaged, and meets the demand of crystal vacuum growth.
In the present embodiment, pot than adjusting means with including crystal weight acquiring unit, remaining material weight computing unit, remaining
Clout volume conversion unit, remaining material liquid level determining unit, pot are with than computing unit and crucible speed regulation unit.
Wherein, crystal weight acquiring unit is used to obtain the crystal weight at current time；
When remaining material weight computing unit obtains current for subtracting the crystal weight at current time according to charging gross weight
Carve the remaining material weight in crucible 5；Charging gross weight is obtained to weigh in advance.
Remaining material volume conversion unit be used for according to the remaining material weight in current time crucible 5 divided by silicon at 1450 DEG C
Density, obtain the remaining material volume in crucible 5.Be liquid at 1450 DEG C due to the remaining material silicon in crucible 5 it is therefore preferable that
Density of the ground by remaining material weight divided by silicon at 1450 DEG C, obtains volume of the remaining material in liquid.
Remaining material liquid level determining unit is used to be worked as according to the remaining material volume and the inside dimension of crucible 5 in crucible 5
Liquid level position in the crucible 5 at preceding moment.
Pot with than computing unit be used for according to the liquid level position in crucible 5 and to should the computing formula of liquid level position obtain
The theoretical pot at current time with than.
Crucible speed regulation unit is used for according to current time theory pot with the lifting speed than adjusting crucible, makes crucible 5
Current time actual pot with than close to theory pot with than.
By this pot with than adjusting means according to the real-time crystal weight for weighing, the charging gross weight of crucible 5 and crucible 5
Inside dimension obtain in real time theory pot with than, and according to theoretical pot with than adjust crucible lifting mechanism 6 lifting speed, and then
The adjustment lifting speed of crucible 5, it is to avoid pot than excessive or too small influence crystal 3 with growing.
As shown in figure 4, the internal structure of crucible 5 from top to bottom includes column body segment 51, arc section 52 and bottom stage 53 successively.
Wherein, the inside diameter of crucible 5 is Dr, and the height of column body segment 51 is La, and the radius of arc section 52 is Rs, the center of arc section 52
It is C apart from the distance of the center line of crucible 5, the height of arc section 52 is X；The radius of bottom stage 53 is Rb, the height of bottom stage 53
It is Lb to spend.Liquid level position of the remaining material in crucible 5 can be calculated according to the sized data in the crucible 5.
Then remaining material liquid level determining unit is used to judge that liquid level position is located at the cylinder of crucible 5 according to the height of liquid level position
In section 51, arc section 52 or bottom stage 53.Illustrated by taking the size in Fig. 4 as an example, if the height of liquid level position is more than Lb
With X sums, then judge liquid level position in column body segment 51；If the height of liquid level position is more than Lb, less than Lb and X sums, then sentence
Disconnected liquid level position is in arc section 52；If the height of liquid level position is less than Lb, judge liquid level position in bottom stage 53.
Computing formula of the pot with corresponding to the crucible section being used for according to where liquid level position than computing unit is calculated to be worked as
The theoretical pot at preceding moment with than.Liquid level position is different, then calculate pot with than computing formula it is different, liquid level position is in column body segment
51, then according to column body segment pot with than computing formula calculate column body segment 51 theoretical pot with than；Liquid level position in arc section 52, then
According to arc section pot with than computing formula calculate arc section 52 theoretical pot with than；Liquid level position in bottom stage 53, then according to
Bottom stage pot with than computing formula calculate bottom stage 53 theoretical pot with than.
Certainly, the internal structure of crucible 5 can also be other structures, correspondingly, for the different zones of internal structure, profit
With different pots with than computing formula calculate theoretical pot with than.
In the present embodiment, crucible speed regulation unit includes pot with than deviation computing module and crucible speed regulation mould
Block, wherein, pot with than deviation computing module according to current time actual pot with than subtract current time theory pot with than being worked as
The pot at preceding moment is with than deviation；Crucible speed adjustment module is used for, if pot is with being on the occasion of illustrating the lifting of crucible 5 than deviation
Excessive velocities, on the occasion of bigger, then illustrate that the lifting speed of crucible 5 is faster, and now, the lifting speed for adjusting crucible 5 reduces；If pot
With being negative value than deviation, then illustrate that the lifting speed of crucible 5 is excessively slow, negative value is smaller, then illustrate that the lifting speed of crucible 5 is slower,
Now the lifting speed of regulation crucible 5 increases.
Certainly, pot is with that can also be theoretical pot with than subtracting actual pot with than if on the contrary, pot is with than deviation than deviation
It is on the occasion of then the explanation lifting of crucible 5 speed is excessively slow, on the occasion of bigger, then illustrates that the lifting of crucible 5 speed is slower, then need to adjust earthenware
The lifting speed of crucible 5 increases；If pot illustrates that crucible 5 lifts excessive velocities with being negative value than deviation, negative value is smaller, then say
The lifting of bright crucible 5 speed is faster, then need the lifting speed for adjusting crucible 5 to reduce.
Each embodiment is described by the way of progressive in this specification, and what each embodiment was stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or uses the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The scope most wide for causing.
Claims (10)
1. a kind of single crystal growing furnace, including main furnace chamber (4), concubine (2), crucible (5), crucible lifting mechanism (6) and crystal pull mechanism
(1), it is characterised in that also include：
Weighing mechanism (7), is arranged on the crystal pull mechanism (1), and the rope (11) of the crystal pull mechanism (1) holds
It is loaded on the Weighing mechanism (7), for weighing crystal weight；
Pot with than adjusting means, controlling to be connected with the Weighing mechanism (7) and the crucible lifting mechanism (6), for basis
The crystal weight at the Weighing mechanism (7) weighed current time, the charging gross weight of the crucible (5) and the crucible
(5) inside dimension obtains the theoretical pot at current time with than and according to the theoretical pot with than adjusting the crucible hoister
The lifting speed of structure (6), make the actual pot of the crucible (5) with than close to the theoretical pot with than.
2. single crystal growing furnace according to claim 1, it is characterised in that the Weighing mechanism (7) includes：
Support (73), in the crystal pull mechanism (1)；
Weigh device (72), on the support (73), for weighing crystal weight, the device of weighing (72) with it is described
Pot is connected with being controlled than adjusting means；
Bearing part (71), be supported in it is described weigh on device (72), for carrying the rope (11).
3. single crystal growing furnace according to claim 2, it is characterised in that the bearing part (71) is pulley, the pulley rotation
Weighed on device (72) described in being supported in, the rope (11) bypasses the pulley.
4. single crystal growing furnace according to claim 3, it is characterised in that the quantity of the device of weighing (72) is at least two,
It is respectively supported at the two ends of the bearing part (71).
5. single crystal growing furnace according to claim 2, it is characterised in that the device of weighing (72) is electronic scale or weight sensing
Device.
6. single crystal growing furnace according to claim 1, it is characterised in that the rope (11) is tungsten rope.
7. single crystal growing furnace according to claim 1, it is characterised in that the crystal pull mechanism (1) includes lifting casing
(12), lifting drive device (13) and the rope (11), lifting drive device (13) are installed on the lifting casing
(12) in, the rope (11) is connected with lifting drive device (13), and the Weighing mechanism (7) is installed on the lifting
In casing (12).
8. the single crystal growing furnace according to claim any one of 1-7, it is characterised in that the pot than adjusting means with including：
Crystal weight acquiring unit, the crystal weight for obtaining current time；
Remaining material weight computing unit, is worked as subtracting the crystal weight at current time according to the charging gross weight
Remaining material weight in preceding moment crucible (5)；
Remaining material volume conversion unit, for the remaining material weight in the crucible according to current time (5) divided by silicon 1450
DEG C when density, obtain the remaining material volume in the crucible (5)；
Remaining material liquid level determining unit, for the inside chi according to the remaining material volume in the crucible (5) and the crucible (5)
Liquid level position in the very little crucible (5) for obtaining current time；
Pot with than computing unit, for according to the liquid level position in the crucible (5) and to should liquid level position computing formula
Obtain the theoretical pot at current time with than；
Crucible speed regulation unit, for the theoretical pot according to current time with than adjusting the crucible lifting mechanism (6)
Lifting speed, make the actual pot at the current time of the crucible (5) with than close to the theoretical pot with than.
9. single crystal growing furnace according to claim 8, it is characterised in that the internal structure of the crucible (5) is from top to bottom successively
Including column body segment (51), arc section (52) and bottom stage (53)；
The remaining material liquid level determining unit is used to judge that the liquid level position is located at the crucible according to the height of liquid level position
(5) in column body segment (51), arc section (52) or bottom stage (53)；
Computing formula of the pot with corresponding to the crucible section being used for according to where the liquid level position than computing unit is calculated
To current time theoretical pot with than.
10. single crystal growing furnace according to claim 8, it is characterised in that the crucible speed regulation unit includes：
Pot is with than deviation computing module, actual pot is with than subtracting current time theory pot with than obtaining according to current time
The pot at current time is with than deviation；
Crucible speed adjustment module, if the pot is with being on the occasion of the lifting speed for adjusting the crucible (5) reduces than deviation；
If with being negative value than deviation, the lifting speed for adjusting the crucible (5) increases the pot.
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| CN201710224908.4A CN106757316A (en) | 2017-04-07 | 2017-04-07 | A kind of single crystal growing furnace |
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| CN201710224908.4A CN106757316A (en) | 2017-04-07 | 2017-04-07 | A kind of single crystal growing furnace |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110284184A (en) * | 2019-07-26 | 2019-09-27 | 内蒙古中环协鑫光伏材料有限公司 | A kind of pulling of crystals liquid level protection system and its control method |
| TWI709670B (en) * | 2019-02-28 | 2020-11-11 | 大陸商上海新昇半導體科技有限公司 | Crystal pulling apparatus and crystal growing device |
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| JPS62278190A (en) * | 1986-05-23 | 1987-12-03 | Sumitomo Electric Ind Ltd | Production of single crystal |
| JPH06206797A (en) * | 1992-11-18 | 1994-07-26 | Fuji Electric Co Ltd | Single crystal-drawing apparatus |
| JP2003176199A (en) * | 2001-12-06 | 2003-06-24 | Toshiba Ceramics Co Ltd | Apparatus and method for pulling single crystal |
| CN201217711Y (en) * | 2008-07-22 | 2009-04-08 | 北京京运通硅材料设备有限公司 | Real time weighing apparatus for growing crystal of silicon monocrystal stove |
| CN101701356A (en) * | 2009-11-17 | 2010-05-05 | 中山大学 | Lower weighing method used for equal-diameter growth of photoelectric crystal |
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| JPS62278190A (en) * | 1986-05-23 | 1987-12-03 | Sumitomo Electric Ind Ltd | Production of single crystal |
| JPH06206797A (en) * | 1992-11-18 | 1994-07-26 | Fuji Electric Co Ltd | Single crystal-drawing apparatus |
| JP2003176199A (en) * | 2001-12-06 | 2003-06-24 | Toshiba Ceramics Co Ltd | Apparatus and method for pulling single crystal |
| CN201217711Y (en) * | 2008-07-22 | 2009-04-08 | 北京京运通硅材料设备有限公司 | Real time weighing apparatus for growing crystal of silicon monocrystal stove |
| CN101701356A (en) * | 2009-11-17 | 2010-05-05 | 中山大学 | Lower weighing method used for equal-diameter growth of photoelectric crystal |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI709670B (en) * | 2019-02-28 | 2020-11-11 | 大陸商上海新昇半導體科技有限公司 | Crystal pulling apparatus and crystal growing device |
| CN110284184A (en) * | 2019-07-26 | 2019-09-27 | 内蒙古中环协鑫光伏材料有限公司 | A kind of pulling of crystals liquid level protection system and its control method |
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