CN106711272B - 基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 - Google Patents
基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 Download PDFInfo
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- CN106711272B CN106711272B CN201611071705.8A CN201611071705A CN106711272B CN 106711272 B CN106711272 B CN 106711272B CN 201611071705 A CN201611071705 A CN 201611071705A CN 106711272 B CN106711272 B CN 106711272B
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- 239000013078 crystal Substances 0.000 title claims abstract description 49
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 230000005855 radiation Effects 0.000 title claims abstract description 38
- 125000005843 halogen group Chemical group 0.000 title claims abstract description 21
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 230000031700 light absorption Effects 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims description 11
- 229910052794 bromium Inorganic materials 0.000 claims description 8
- 229910052801 chlorine Inorganic materials 0.000 claims description 8
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910000039 hydrogen halide Inorganic materials 0.000 claims description 5
- 239000012433 hydrogen halide Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 3
- 229910003472 fullerene Inorganic materials 0.000 claims description 3
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical group [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 3
- 230000008033 biological extinction Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 239000002994 raw material Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 230000008901 benefit Effects 0.000 abstract description 5
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- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000006641 stabilisation Effects 0.000 abstract 1
- 238000011105 stabilization Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 13
- 229910052792 caesium Inorganic materials 0.000 description 6
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 6
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 6
- -1 silver bismuth bromine Chemical compound 0.000 description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 5
- TXKAQZRUJUNDHI-UHFFFAOYSA-K bismuth tribromide Chemical compound Br[Bi](Br)Br TXKAQZRUJUNDHI-UHFFFAOYSA-K 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002285 radioactive effect Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 4
- 238000002207 thermal evaporation Methods 0.000 description 4
- AIYUHDOJVYHVIT-UHFFFAOYSA-M caesium chloride Chemical compound [Cl-].[Cs+] AIYUHDOJVYHVIT-UHFFFAOYSA-M 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000026030 halogenation Effects 0.000 description 2
- 238000005658 halogenation reaction Methods 0.000 description 2
- ZYCMDWDFIQDPLP-UHFFFAOYSA-N hbr bromine Chemical compound Br.Br ZYCMDWDFIQDPLP-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- VLSWWRJVKAPDDQ-UHFFFAOYSA-N [Pb].[Br].CN Chemical compound [Pb].[Br].CN VLSWWRJVKAPDDQ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- JHXKRIRFYBPWGE-UHFFFAOYSA-K bismuth chloride Chemical compound Cl[Bi](Cl)Cl JHXKRIRFYBPWGE-UHFFFAOYSA-K 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- SDLBJIZEEMKQKY-UHFFFAOYSA-M silver chlorate Chemical compound [Ag+].[O-]Cl(=O)=O SDLBJIZEEMKQKY-UHFFFAOYSA-M 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
Claims (8)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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CN201611071705.8A CN106711272B (zh) | 2016-11-29 | 2016-11-29 | 基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 |
US16/069,019 US20190019905A1 (en) | 2016-11-29 | 2017-11-24 | Semiconductor radiation detector based on bi-based quaternary halide single crystal and manufacturing method thereof |
PCT/CN2017/112762 WO2018099322A1 (zh) | 2016-11-29 | 2017-11-24 | 基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 |
Applications Claiming Priority (1)
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CN201611071705.8A CN106711272B (zh) | 2016-11-29 | 2016-11-29 | 基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 |
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CN106711272A CN106711272A (zh) | 2017-05-24 |
CN106711272B true CN106711272B (zh) | 2018-05-11 |
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CN201611071705.8A Active CN106711272B (zh) | 2016-11-29 | 2016-11-29 | 基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 |
Country Status (3)
Country | Link |
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US (1) | US20190019905A1 (zh) |
CN (1) | CN106711272B (zh) |
WO (1) | WO2018099322A1 (zh) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106711272B (zh) * | 2016-11-29 | 2018-05-11 | 华中科技大学 | 基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 |
CN107248538B (zh) * | 2017-05-25 | 2019-03-08 | 华中科技大学 | 一种双钙钛矿晶体的后处理方法及应用 |
CN107299393B (zh) * | 2017-06-08 | 2018-12-14 | 华中科技大学 | 一种多元钙钛矿材料及其制备与应用 |
CN107934916B (zh) * | 2017-11-16 | 2020-10-20 | 中山大学 | 一种稳定无铅的全无机双钙钛矿a2bb’x6纳米晶的制备方法 |
CN108365031B (zh) * | 2018-02-27 | 2019-07-23 | 华中科技大学 | 一种提高辐射探测性能的方法、对应的辐射探测器及制备 |
CN108400244B (zh) * | 2018-03-06 | 2021-07-30 | 郑州大学 | 一种基于无铅双钙钛矿薄膜的深紫外光探测器及制备方法 |
CN108559503B (zh) * | 2018-03-30 | 2020-07-07 | 华中科技大学 | 一种Cs2AgBiBr6双钙钛矿及其制备方法 |
CN110408993B (zh) * | 2019-06-29 | 2020-10-27 | 宁波大学 | 一种用于X射线探测的Cs2AgBiBr6双钙钛矿晶体的制备方法 |
CN111157547A (zh) * | 2020-01-20 | 2020-05-15 | 成都闰德芯传感器技术有限公司 | 一种碲化锌镉晶体的检测方法 |
CN113697855B (zh) * | 2020-05-20 | 2022-07-12 | 中国科学院上海硅酸盐研究所 | 一种Cu掺杂双钙钛矿材料及其制备方法 |
US11897784B2 (en) * | 2020-12-18 | 2024-02-13 | North Carolina State University | Perovskite materials for ionizing radiation detection and related methods |
CN115000232A (zh) * | 2022-06-16 | 2022-09-02 | 太原理工大学 | 一种基于Cs2AgBiBr6的近红外光电探测器及其制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103636021A (zh) * | 2011-08-17 | 2014-03-12 | 吉坤日矿日石能源株式会社 | 光电转换元件及其制造方法 |
CN105829913A (zh) * | 2013-12-18 | 2016-08-03 | 西门子保健有限责任公司 | 具有有机光电探测器外壳的闪烁体 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5155696B2 (ja) * | 2008-03-05 | 2013-03-06 | 富士フイルム株式会社 | 撮像素子 |
WO2015010055A1 (en) * | 2013-07-19 | 2015-01-22 | University Of Tennessee Research Foundation | Ternary metal halide scintillator |
KR102409391B1 (ko) * | 2015-10-27 | 2022-06-15 | 삼성전자주식회사 | 양자점을 포함하는 광전자소자 |
US20170194101A1 (en) * | 2015-12-31 | 2017-07-06 | The Board Of Trustees Of The Leland Stanford Junior University | HALIDE DOUBLE PEROVSKITE Cs2AgBiBr6 SOLAR-CELL ABSORBER HAVING LONG CARRIER LIFETIMES |
CN106711272B (zh) * | 2016-11-29 | 2018-05-11 | 华中科技大学 | 基于Bi基四元卤化物单晶的半导体辐射探测器及制备方法 |
-
2016
- 2016-11-29 CN CN201611071705.8A patent/CN106711272B/zh active Active
-
2017
- 2017-11-24 WO PCT/CN2017/112762 patent/WO2018099322A1/zh active Application Filing
- 2017-11-24 US US16/069,019 patent/US20190019905A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103636021A (zh) * | 2011-08-17 | 2014-03-12 | 吉坤日矿日石能源株式会社 | 光电转换元件及其制造方法 |
CN105829913A (zh) * | 2013-12-18 | 2016-08-03 | 西门子保健有限责任公司 | 具有有机光电探测器外壳的闪烁体 |
Non-Patent Citations (1)
Title |
---|
CS2AgBiX6(X=Br,Cl): New visible light absorbing, lead-free halide perovskite semiconductors;A;<Chem.Mater.>;20160210(第28期);第1348-1354页 * |
Also Published As
Publication number | Publication date |
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CN106711272A (zh) | 2017-05-24 |
WO2018099322A1 (zh) | 2018-06-07 |
US20190019905A1 (en) | 2019-01-17 |
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Inventor after: Tang Jiang Inventor after: Pan Weicheng Inventor after: Wu Haodi Inventor after: Luo Jiajun Inventor after: Niu Guangda Inventor after: Zhou Ying Inventor before: Tang Jiang Inventor before: Pan Weicheng Inventor before: Wu Haodi Inventor before: Luo Jiajun Inventor before: Niu Guangda Inventor before: Zhou Ying |
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