CN106707700B - A kind of welding resistance exposure method - Google Patents
A kind of welding resistance exposure method Download PDFInfo
- Publication number
- CN106707700B CN106707700B CN201710181528.7A CN201710181528A CN106707700B CN 106707700 B CN106707700 B CN 106707700B CN 201710181528 A CN201710181528 A CN 201710181528A CN 106707700 B CN106707700 B CN 106707700B
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- China
- Prior art keywords
- exposure
- welding resistance
- sample
- light
- carried out
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The invention discloses a kind of welding resistance exposure method, belongs to exposure machine technical field, the welding resistance exposure method, including step：(1) direct write exposure is carried out to the welding resistance region of sample, the directional light that (2) carry out mixed wavelengths to sample whole region is exposed, and sample is carried out development treatment by (3), and the solder mask in non-welding resistance region is developed and removed；This method avoid DMD to receive multi-wavelength mixed light, greatly prolong DMD service life, reduce production cost, it is relatively low to equipment requirement, energy compensating is carried out using secondary directional light, reduces by DMD number, reduce cost and equipment complexity, solder mask is had obvious glossiness in appearance, make product that there is more preferable inoxidizability and impact resistance, property is more stable in reflow process.
Description
Technical field
The present invention relates to a kind of welding resistance exposure method, belong to exposure machine technical field.
Background technology
Solder mask is the part of printed circuit board (PCB) Green or other colors, and the effect of solder mask was mainly soldering
When the part that prevents from being sealed on connected by scolding tin, circuit board is protected in Reflow Soldering, tested in high/low temperature
When holding circuit plate stable performance.In addition, welding resistance can also make circuit board more attractive in appearance glossy, and it is attractive in appearance, it is in conducting wire
In fine and close space, anti-oxidant, the effect such as anti-short circuit is played.
In the prior art, solder mask is exposed on circuit board by the way of laser direct-writing more, and exposure light source uses more ripples
Section mixing light source, but in the prior art, DMD can not receive multiwave mixed light, particularly short wavelength's high-energy for a long time
Light, the injury to DMD is very big, has a strong impact on DMD service life, greatly increases production cost；Fitted respectively according to multiple
Answer the DMD of light sources with different wavelengths while work, not only increase equipment production cost, maintenance cost etc., more cause equipment volume mistake
Greatly, structure is excessively complicated, it is difficult to ensure operation stability, and also more DMD expose to the same area simultaneously, it is difficult to control exposure essence
Degree.
Therefore, it is necessary to which a kind of neither influence the DMD life-spans, and can processes the welding resistance exposure method of solder mask very well.
The content of the invention
In order to solve the above problems, the invention provides a kind of welding resistance exposure method.
A kind of welding resistance exposure method provided by the invention, comprises the following steps：
(1) direct write exposure is carried out to the welding resistance region of sample；
(2) directional light that mixed wavelengths are carried out to sample whole region exposes；
(3) sample is subjected to development treatment, the solder mask in non-welding resistance region is developed and removed.
In one embodiment of the invention, the optical source wavelength of the direct write exposure described in step (1) is 400nm-
420nm, the mixing that the light source of the exposure of directional light described in step (2) is wavelength 380nm-390nm and wavelength is 360nm-370nm
Light.
In one embodiment of the invention, the light source of the direct write exposure and the mixing energy of light source of directional light exposure
Than for 80%-95%：5%-20%.
In one embodiment of the invention, the optical source wavelength of the direct write exposure described in step (1) is 405nm, step
Suddenly the mixed light that the light source of the exposure of directional light described in (2) is wavelength 385nm and wavelength is 365nm.
In one embodiment of the invention, the light source of the direct write exposure and the mixing energy of light source of directional light exposure
Than for 90%：10%.
In one embodiment of the invention, the development of solder mask described in step (3) is removed with sample development operation
Carry out.
Advantages of the present invention and effect：
Welding resistance exposure method provided by the invention：
1, avoid DMD and receive multi-wavelength mixed light, greatly prolong DMD service life, reduce production cost；
2, exposure method is relatively low to equipment requirement, carries out energy compensating using secondary directional light, reduces by DMD number, reduces
Cost and equipment complexity.
3, the energy compensating to the product solder mask such as pcb board is realized, solder mask is had obvious glossiness in appearance；
4 so that welding resistance layer surface is finer and close, isolation gas, product is had more preferable inoxidizability；
5, solder mask has higher intensity, improves the impact resistance of pcb board；
6, improve the high temperature resistant of solder mask, low temperature resistant performance, property is stable in reflow process, effectively prevent due to
Appearance caused by solder mask is destroyed situations such as pcb board short circuit, electrical property decline.
Brief description of the drawings
Fig. 1 is welding resistance exposure method flow chart of the present invention.
Specific embodiment
After welding resistance exposure, the adhesive force of solder mask, hardness, resistance to molten aggressivity, resistance to chemical reagents and green oil thickness will be carried out
Measure, is tested using national sector standard IPC-SM-840B method.
The technical scheme of invention is described in detail below in conjunction with the accompanying drawings：
Embodiment 1
Using such as Fig. 1 as welding resistance exposure method flow chart of the present invention, the present invention is made furtherly with reference to the flow chart
It is bright：
As shown in figure 1, the 1st step：Direct write exposure is carried out to the region of the welding resistance to be exposed of sample, uses exposure light source ripple
A length of 400nm；2nd step：The directional light that mixed wavelengths are carried out to sample whole region exposes, and uses mixing radiant as wavelength
380nm and 360nm mixed light；(3) sample is subjected to development treatment, the solder mask in non-welding resistance region is developed and removed.
1st step direct write exposes and the energy of light source ratio of the 2nd step directional light exposure is 80%：20%.
The development of solder mask described in 3rd step removes to be carried out with sample development operation.
Carry out performance test to the solder mask that is exposed, for wherein adhesive force up to 100%, hardness reaches 5H, resistance to molten at 280 DEG C
Aggressivity was up to 10 seconds, and 23 DEG C of resistance to chemical reagents was up to 10 minutes, green oil thickness 0.25mm.
Embodiment 2
Compared with Example 1, embodiment 2 uses different direct write exposure light source and directional light exposure light source, using difference
Energy proportioning：
Specific steps are as shown in figure 1, the 1st step：Direct write exposure is carried out to the region of the welding resistance to be exposed of sample, uses exposure
Radiant wavelength is 420nm；2nd step：The directional light that mixed wavelengths are carried out to sample whole region exposes, and uses mixed light light
Source is wavelength 390nm and 370nm mixed light；(3) sample is subjected to development treatment, the solder mask development in non-welding resistance region is gone
Remove.
1st step direct write exposes and the energy of light source ratio of the 2nd step directional light exposure is 95%：5%.
The development of solder mask described in 3rd step removes to be carried out with sample development operation.
Carry out performance test to the solder mask that is exposed, for wherein adhesive force up to 100%, hardness reaches 5H, resistance to molten at 280 DEG C
Aggressivity was up to 12 seconds, and 23 DEG C of resistance to chemical reagents was up to 12 minutes, green oil thickness 0.27mm.
Embodiment 3
Compared with embodiment 1 and embodiment 2, embodiment 3 uses different direct write exposure light source and directional light exposure light source,
Using different energy proportionings：
Specific steps are as shown in figure 1, the 1st step：Direct write exposure is carried out to the region of the welding resistance to be exposed of sample, uses exposure
Radiant wavelength is 405nm；2nd step：The directional light that mixed wavelengths are carried out to sample whole region exposes, and uses mixed light light
Source is wavelength 385nm and 365nm mixed light；(3) sample is subjected to development treatment, the solder mask development in non-welding resistance region is gone
Remove.
1st step direct write exposes and the energy of light source ratio of the 2nd step directional light exposure is 90%：10%.
The development of solder mask described in 3rd step removes to be carried out with sample development operation.
Carry out performance test to the solder mask that is exposed, wherein adhesive force up to 100%, hardness up to 6H, it is resistance at 280 DEG C
Molten aggressivity was up to 13 seconds, and 23 DEG C of resistance to chemical reagents was up to 15 minutes, green oil thickness 0.3mm.
Although the present invention is disclosed as above with preferred embodiment, it is not limited to the present invention, any to be familiar with this skill
The people of art, without departing from the spirit and scope of the present invention, it can all do various change and modification, therefore the protection model of the present invention
Enclose being defined of being defined by claims.
Claims (4)
1. a kind of welding resistance exposure method, the welding resistance exposure method, comprise the following steps：
(1) direct write exposure is carried out to the welding resistance region of sample；
(2) directional light that mixed wavelengths are carried out to sample whole region exposes；
(3) sample is subjected to development treatment, the solder mask in non-welding resistance region is developed and removed；
The optical source wavelength of direct write exposure described in step (1) is 400nm-420nm, the exposure of directional light described in step (2)
The mixed light that light source is wavelength 380nm-390nm and wavelength is 360nm-370nm, the light source and directional light of the direct write exposure
The mixing light source energy ratio of exposure is 80%-95%：5%-20%.
A kind of 2. welding resistance exposure method according to claim 1, it is characterised in that the direct write exposure described in step (1)
Optical source wavelength be 405nm, the light source of the exposure of directional light described in step (2) is wavelength 385nm and mixing that wavelength is 365nm
Light.
A kind of 3. welding resistance exposure method according to claim 1, it is characterised in that the light source of direct write exposure with it is parallel
The mixing light source energy ratio of light exposure is 90%：10%.
4. a kind of welding resistance exposure method according to claim 1, it is characterised in that solder mask described in step (3) shows
Shadow removes to be carried out with sample development operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710181528.7A CN106707700B (en) | 2017-03-24 | 2017-03-24 | A kind of welding resistance exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710181528.7A CN106707700B (en) | 2017-03-24 | 2017-03-24 | A kind of welding resistance exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106707700A CN106707700A (en) | 2017-05-24 |
| CN106707700B true CN106707700B (en) | 2018-04-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710181528.7A Active CN106707700B (en) | 2017-03-24 | 2017-03-24 | A kind of welding resistance exposure method |
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| CN (1) | CN106707700B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110806682B (en) * | 2019-12-05 | 2024-05-28 | 中山新诺科技股份有限公司 | Multispectral digital exposure method and multispectral digital exposure system for integrated exposure of resistance-welding line |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1198082A (en) * | 1981-12-11 | 1985-12-17 | Gerald B. Fefferman | Applying coating to circuit board spaced from hole edges and curing sub-layer |
| CN1934502A (en) * | 2004-03-22 | 2007-03-21 | 富士胶片株式会社 | Pattern forming process and pattern |
| JP2006085116A (en) * | 2004-08-17 | 2006-03-30 | Fuji Photo Film Co Ltd | Photosensitive transfer material, method for forming pattern, and pattern |
| JP4410134B2 (en) * | 2005-03-24 | 2010-02-03 | 日立ビアメカニクス株式会社 | Pattern exposure method and apparatus |
| CN105974748A (en) * | 2016-07-07 | 2016-09-28 | 中山新诺科技股份有限公司 | Novel high-power and high-speed maskless photoetching system |
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2017
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| CN106707700A (en) | 2017-05-24 |
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| PB01 | Publication | ||
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Effective date of registration: 20181010 Address after: 221300 Huashan Road, Pizhou Economic Development Zone, Pizhou, Jiangsu Patentee after: Jiangsu shadow Speed Technology Co., Ltd. Address before: 201612 401, room 9, 1158 Songjiang District Road, Songjiang District, Shanghai. Patentee before: Shanghai reputation Intelligent Equipment Co., Ltd. |
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Effective date of registration: 20190627 Address after: 221300 Huashan Road, Pizhou Economic Development Zone, Xuzhou, Jiangsu Patentee after: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY CO., LTD. Address before: 221300 Huashan Road, Pizhou Economic Development Zone, Pizhou, Jiangsu Patentee before: Jiangsu shadow Speed Technology Co., Ltd. |
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Address after: 221000 west side of Hengshan Road, Pizhou City, Xuzhou City, Jiangsu Province Patentee after: Jiangsu Yingsu integrated circuit equipment Co., Ltd Address before: 221300 Huashan Road, Pizhou Economic Development Zone, Jiangsu, China, Xuzhou Patentee before: JIANGSU YINGSU PHOTOELECTRIC TECHNOLOGY Co.,Ltd. |