CN106695567A - Flow compensation method - Google Patents
Flow compensation method Download PDFInfo
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- CN106695567A CN106695567A CN201510420834.2A CN201510420834A CN106695567A CN 106695567 A CN106695567 A CN 106695567A CN 201510420834 A CN201510420834 A CN 201510420834A CN 106695567 A CN106695567 A CN 106695567A
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Abstract
The invention discloses a flow compensation method. The flow compensation method comprises the following steps that a cavity is chosen as a benchmark cavity, liquid is input into the benchmark cavity, a nozzle of the benchmark cavity sprays the liquid to form a liquid column, the height of the liquid column is recoded as a benchmark height, and the liquid flow of the benchmark cavity is recorded as a benchmark flow; another cavity is chosen as a comparison cavity, liquid is input into the comparison cavity, a nozzle of the comparison cavity sprays the liquid to form a liquid column, the liquid flow of the comparison cavity is adjusted to enable a liquid column of the comparison cavity to reach the benchmark height, the liquid flow of the comparison cavity is recorded as a comparison flow, and the difference value of the comparison flow and the benchmark flow is calculated and serves as a compensation value of the comparison cavity; and other cavities continue to be chosen as comparison cavities, and compensation values of all the comparison cavities are calculated correspondingly till calculation of the compensation values of all the comparison cavities participating in the technological process is completed. In the technological process, the liquid provided for the benchmark cavity is the benchmark flow, and the liquid flow provided for another cavity is the sum of the benchmark flow and the compensation value of the corresponding cavity.
Description
Technical field
The present invention relates to semiconductor fabrication process, more specifically to right in semiconductor fabrication process
The control method of fluid flow.
Background technology
With the development of semi-conductor industry, great scale integrated circuit (VLSI) and ultra-large collection
It has been widely used into circuit (ULSI).Compared to conventional integrated circuit, great scale is integrated
Circuit and super large-scale integration have more complicated sandwich construction, smaller characteristic size.Nothing should
Power planarization can overcome traditional chemical-mechanical planarization technology integrated in ultra tiny characteristic size
Defect in circuit.Non-stress polishing technology be based on electrochemical principle, be capable of mechanical stress to gold
Category interconnection architecture is planarized.Non-stress polishing technology needs to use polishing fluid that can be conductive,
Polishing fluid is sprayed to crystal column surface by shower nozzle.Shower nozzle is simultaneously also as the electricity in electrochemical polishing process
Pole, coordinates to manufacture electric field, with the fixture with electrode for carrying out electricity to specific region crystal column surface
Surface with chemical polishing technology.
Fig. 1 discloses the schematic diagram of shower nozzle jet polishing liquid.In the embodiment shown in fig. 1, shower nozzle
102 jet polishing liquid upward, shower nozzle inside provides certain fluid pressure and flow so that in spray
The top of head forms the fluid column 104 of certain altitude.Surface (the typically following table of fluid column 104 and wafer
Face) contact form certain liquid area coverage, electrochemical polish work is carried out in liquid area coverage
Skill.
In electrochemical polishing process, the Current Voltage of applying, the movement velocity of wafer, reality are by throwing
The liquid coverage (polishing scope) that light liquid fluid column is formed determines clearance and uniformity etc.
Process results.In the great scale integrated circuit and ultra-large integrated electricity high for uniformity requirement
Road field, the uniformity of various technological parameters is particularly important.Because wafer may be needed in difference
Processing chamber in be processed, it is therefore desirable to so that the technological parameter of each processing chamber all keeps one
Cause.In these technological parameters, the voltage x current of applying and the movement velocity of wafer are all directly can
The parameter of control, therefore be easily controlled.But polishing scope is the polishing sprayed by each shower nozzle
Liquid fluid column is determined that polishing scope is influenceed by Multiple factors, therefore is that influence process results are uniform
The most important parameter of property.
The content of the invention
The present invention is directed to propose in the unified method of liquid-column height is realized by adjusting flow.
An embodiment of the invention, proposes a kind of flow-compensated method, including：
A cavity is selected as benchmark cavity, to infusion fluid in benchmark cavity, the spray of benchmark cavity
Mouth injection liquid forms fluid column, height on the basis of record liquid-column height, the liquid flow of record benchmark cavity
Flow on the basis of amount；
Select another cavity as control cavity, to infusion fluid in control cavity, compare the spray of cavity
Mouth injection liquid forms fluid column, and the fluid flow of regulation control cavity is with so that the fluid column of control cavity reaches
To altitude datum, the fluid flow of record control cavity is control flow, calculates control flow and benchmark
The difference of flow is the offset of the control cavity；
Continue to select other cavitys as control cavity and calculate the offset of each control cavity respectively,
Until the offset for participating in all cavitys of technological process is all calculated and finished；
In technological process, to flow on the basis of the liquid that benchmark cavity is provided, provided to other cavitys
Fluid flow be：The offset of the standard flow+cavity.
In one embodiment, liquid is polishing fluid.
In one embodiment, shower nozzle sprays liquid upward.
In one embodiment, the offset of each control cavity is recorded in database, is for control
System is called.
The present invention uses different fluid floies in different process chamber, is eliminated by flow-compensated
Influence of the other factors to liquid-column height, realizes the unification of liquid-column height.
Brief description of the drawings
The above and other feature of the present invention, property and advantage will be by below in conjunction with the accompanying drawings and real
Apply the description of example and become apparent, identical reference represents that identical is special all the time in the accompanying drawings
Levy, wherein：
Fig. 1 discloses the schematic diagram of shower nozzle jet polishing liquid.
Fig. 2 discloses the flow chart of the flow-compensated method of an embodiment of the invention.
Specific embodiment
The polishing area of crystal column surface is mainly by the liquid-column height institute of the polishing fluid contacted with crystal column surface
Determine.Liquid-column height is the direct result of fluid flow in shower nozzle and liquid pressure.Different
In processing chamber, due to the diameter of shower nozzle, the length of pipe of solution feed pump to shower nozzle and arrangement not
Together so that the liquid pressure at each shower nozzle is different.So, if in different processing chambers
Shower nozzle provides identical fluid flow, then due to the difference of liquid pressure, can cause sprayed throwing
Light liquid liquid-column height is different, causes the difference of polishing area, causes the deficiency of uniformity.Because shower nozzle
Diameter, the length of pipe of solution feed pump to shower nozzle and arrangement cannot change, therefore adjust different works
To cause liquid-column height unification to turn into, one kind is rational to be selected fluid flow in skill chamber.
Liquid-column height and final outlet end fluid pressure are directly proportional under usual same traffic, i.e., by pipeline
The vertical drop of length and shower nozzle to solution feed pump influences.As pipeline is more long, the pressure drop of generation is bigger,
Flow needed for reaching standard liquid-column height is also bigger.And the vertical height difference of cavity can also influence
Final liquid-column height, when cavity is bigger apart from the normal throw of solution feed pump, reaches standard liquid-column height institute
The flow for needing is also bigger.
The present invention proposes a kind of flow-compensated method, by different process chamber it is flow-compensated come
Realize the unification of liquid-column height in each processing chamber.
With reference to shown in Fig. 2, Fig. 2 discloses the flow-compensated method of an embodiment of the invention
Flow chart, including the steps：
S1, selection one cavity as benchmark cavity, to infusion fluid in benchmark cavity, benchmark cavity
Spout injection liquid formed fluid column, record liquid-column height on the basis of height, record benchmark cavity liquid
Flow on the basis of body flow.
S2, another cavity of selection, to infusion fluid in control cavity, compare cavity as control cavity
Spout injection liquid formed fluid column, regulation control cavity fluid flow with cause control cavity liquid
Post reaches altitude datum, and the fluid flow of record control cavity is control flow, calculate control flow with
The difference of standard flow is the offset of the control cavity.
S3, continuation select other cavitys as control cavity and calculate the compensation of each control cavity respectively
Value, until the offset for participating in all cavitys of technological process is all calculated and finished.In addition to benchmark cavity
The offset of each other cavity can be recorded in database, called by control system.
S4, in technological process, to benchmark cavity provide liquid on the basis of flow, to other cavitys
The fluid flow of offer is：The offset of the standard flow+cavity.Control system can be adjusted from database
With the offset of each cavity, offset is added on standard flow and is applied to each cavity afterwards.
The technique is applied to electrochemical polishing process, and the liquid of shower nozzle injection is polishing fluid.Generally, should
Method is used for the equipment for controlling shower nozzle to spray liquid upwards to form fluid column.
The present invention uses different fluid floies in different process chamber, is eliminated by flow-compensated
Influence of the other factors to liquid-column height, realizes the unification of liquid-column height.
Above-described embodiment is available to be familiar with person in the art and realizes or using of the invention, ripe
Those skilled in the art are known without departing from the present invention in the case of the inventive idea to do above-described embodiment
Go out various modifications or change, thus protection scope of the present invention is not limited by above-described embodiment, and answer
This is the maximum magnitude for meeting the inventive features that claims are mentioned.
Claims (4)
1. a kind of flow-compensated method, it is characterised in that including：
A cavity is selected as benchmark cavity, to infusion fluid in benchmark cavity, the spray of benchmark cavity
Mouth injection liquid forms fluid column, height on the basis of record liquid-column height, the liquid flow of record benchmark cavity
Flow on the basis of amount；
Select another cavity as control cavity, to infusion fluid in control cavity, compare the spray of cavity
Mouth injection liquid forms fluid column, and the fluid flow of regulation control cavity is with so that the fluid column of control cavity reaches
To altitude datum, the fluid flow of record control cavity is control flow, calculates control flow and benchmark
The difference of flow is the offset of the control cavity；
Continue to select other cavitys as control cavity and calculate the offset of each control cavity respectively,
Until the offset for participating in all cavitys of technological process is all calculated and finished；
In technological process, to flow on the basis of the liquid that benchmark cavity is provided, provided to other cavitys
Fluid flow be：The offset of the standard flow+cavity.
2. flow-compensated method as claimed in claim 1, it is characterised in that：
The liquid is polishing fluid.
3. flow-compensated method as claimed in claim 1, it is characterised in that
The shower nozzle sprays liquid upward.
4. flow-compensated method as claimed in claim 1, it is characterised in that
The offset of each control cavity is recorded in database, is called for control system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510420834.2A CN106695567B (en) | 2015-07-17 | 2015-07-17 | Flow compensation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510420834.2A CN106695567B (en) | 2015-07-17 | 2015-07-17 | Flow compensation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106695567A true CN106695567A (en) | 2017-05-24 |
| CN106695567B CN106695567B (en) | 2020-03-27 |
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|---|---|---|---|
| CN201510420834.2A Active CN106695567B (en) | 2015-07-17 | 2015-07-17 | Flow compensation method |
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| CN1476237A (en) * | 2002-07-01 | 2004-02-18 | ��˹��ŵ�� | Subscriber interface capable of reconfiguration |
| CN1554118A (en) * | 2001-06-19 | 2004-12-08 | Ӧ�ò��Ϲ�˾ | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
| CN1948084A (en) * | 2006-05-18 | 2007-04-18 | 刘宏茂 | Lift force control method of rotating wing fan and vertiautomobile |
| CN101966688A (en) * | 2010-07-21 | 2011-02-09 | 河北工业大学 | Low-pressure CMP (Chemico-mechanical Polishing) method for grand-scale integrated circuit copper wiring surface |
| CN102032167A (en) * | 2010-12-10 | 2011-04-27 | 浙江工业大学 | Flow compensation technology of digital frequency conversion metering pump |
| CN102770660A (en) * | 2009-12-17 | 2012-11-07 | Avl列表有限责任公司 | System and method for measuring injection processes |
| CN103849734A (en) * | 2012-12-06 | 2014-06-11 | 宝山钢铁股份有限公司 | Platy-based quenching device flow control method as well as detection and control device thereof |
| CN104266691A (en) * | 2014-10-13 | 2015-01-07 | 北京光电技术研究所 | Flow rate measuring device for circulating liquid |
| CN104404183A (en) * | 2014-11-24 | 2015-03-11 | 中冶南方工程技术有限公司 | Water supplement control method of blast furnace soft water closed circulating system |
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2015
- 2015-07-17 CN CN201510420834.2A patent/CN106695567B/en active Active
Patent Citations (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1129409A (en) * | 1993-07-21 | 1996-08-21 | T-系统国际有限公司 | Drip irrigation hose with pressure compensation and method for its manufacture |
| CN1426273A (en) * | 2000-02-28 | 2003-06-25 | 伊曼纽尔·德米扎基斯 | Emitter with water inlet filter and method of assembly thereof |
| CN1443300A (en) * | 2000-07-31 | 2003-09-17 | 三井金属矿业株式会社 | Flow metering method and flowmeter |
| CN1554118A (en) * | 2001-06-19 | 2004-12-08 | Ӧ�ò��Ϲ�˾ | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
| CN1448993A (en) * | 2002-04-03 | 2003-10-15 | 华邦电子股份有限公司 | Abrasion method using dynamic calculation processing parameter |
| CN1476237A (en) * | 2002-07-01 | 2004-02-18 | ��˹��ŵ�� | Subscriber interface capable of reconfiguration |
| CN1948084A (en) * | 2006-05-18 | 2007-04-18 | 刘宏茂 | Lift force control method of rotating wing fan and vertiautomobile |
| CN102770660A (en) * | 2009-12-17 | 2012-11-07 | Avl列表有限责任公司 | System and method for measuring injection processes |
| CN101966688A (en) * | 2010-07-21 | 2011-02-09 | 河北工业大学 | Low-pressure CMP (Chemico-mechanical Polishing) method for grand-scale integrated circuit copper wiring surface |
| CN102032167A (en) * | 2010-12-10 | 2011-04-27 | 浙江工业大学 | Flow compensation technology of digital frequency conversion metering pump |
| CN103849734A (en) * | 2012-12-06 | 2014-06-11 | 宝山钢铁股份有限公司 | Platy-based quenching device flow control method as well as detection and control device thereof |
| CN104266691A (en) * | 2014-10-13 | 2015-01-07 | 北京光电技术研究所 | Flow rate measuring device for circulating liquid |
| CN104404183A (en) * | 2014-11-24 | 2015-03-11 | 中冶南方工程技术有限公司 | Water supplement control method of blast furnace soft water closed circulating system |
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| CN106695567B (en) | 2020-03-27 |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Applicant after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai City, Pudong New Area China Zhangjiang High Tech Park of Shanghai Cailun Road No. 1690 building fourth Applicant before: ACM (SHANGHAI) Inc. |
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