CN104952787A - Automatic correcting method for radial thickness - Google Patents
Automatic correcting method for radial thickness Download PDFInfo
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- CN104952787A CN104952787A CN201410116119.5A CN201410116119A CN104952787A CN 104952787 A CN104952787 A CN 104952787A CN 201410116119 A CN201410116119 A CN 201410116119A CN 104952787 A CN104952787 A CN 104952787A
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Abstract
The invention discloses an automatic correcting method for a radial thickness, which is suitable for a flattening process of a metal film layer. The automatic correcting method comprises the steps of: a. measuring the initial film thickness of the metal film layer on a wafer at a plurality of measuring points; b. introducing a preset standard relative movement speed table and a preset standard elimination rate table which corresponds with the standard relative movement speed table; c. setting a residual film thickness target value at the plurality of measuring points; and d. correcting the standard relative movement speed table and the standard elimination rate table according to the initial film thickness and the residual film thickness target value. According to the automatic correcting method, through controlling the relative movement speed in a same radius, the elimination rate is controlled, and finally the radial thickness distribution nonuniformity of a wafer is corrected.
Description
Technical field
The present invention relates to semiconducter process, particularly relate to a kind of radial thickness automatic dressing method being applicable to the flatening process of metallic diaphragm.
Background technology
The integrated antenna package technology (3D IC Package) stacking based on the three-dimensional of silicon chip through hole (TSV) technology is encapsulation technology up-to-date at present, there is minimum size and quality, effectively reduce ghost effect, improve chip speed and reduce the advantages such as power consumption.TSV technology is by making vertical conducting between chip and chip, realize the state-of-the-art technology interconnected between chip, as a kind of substitute technology of wire bonding, form the distance that the through-hole structure penetrating silicon wafer can shorten interconnection greatly, thus eliminate chip-stack restriction quantitatively.The 3-D stacks of chip can be applied in wider field.
Existing silicon through hole uses metallic copper as metal level, copper metal layer front technique mainly comprises following steps copper seed layer physical gas-phase deposition (PVD), copper film electroplating technology (ECP), annealing process (Anneal), CMP process (CMP).Because the through hole in TSV technology has larger depth-to-width ratio, generally from 5:1 to 10:1, even 20:1.Large depth-to-width ratio can cause in copper-plating technique, and in hole, copper cannot fill up; Deep hole can fill up by copper plating process through optimizing preferably, but crystal column surface metal copper layer can be caused blocked up, be generally 3 to 5 microns, metal internal stress increases along with thickness and increases, therefore the metal surface stress of TSV silicon chip can be larger than traditional chip metal ply stress, and silicon chip can form warpage.In annealing process afterwards, because metal level is thicker, and metal grain is grown up, and deep hole upper metal can form projection.Above 2 can be caused wafer when using traditional C MP CMP process broken, and cannot metal bump effectively above planarization deep hole; In addition thicker copper film can increase time and the process costs of planarization process steps.
In 3D silicon via-hole applications, because silicon through hole has high-aspect-ratio 10:1 usually, even 20:1; Copper-plating technique needs the long period, and metallic copper is filled up through hole, causes surface copper cover layer blocked up.So in follow-up CMP process, need to remove more copper capping layer, increase process time and process costs.Unstressed throwing process for copper effectively can solve stress and Cost Problems in flatening process, but has even scarcely at wafer overall situation copper film surface thickness after copper-plating technique, under being usually rendered as radial direction, and difference in thickness; Need to revise in planarization process, and guarantee that the depression numerical value in final wiring or through hole is consistent.
Summary of the invention
For above-mentioned deficiency of the prior art, the present invention proposes a kind of radial thickness automatic dressing method.The method is by regulating the relation that clearance is relevant to horizontal direction speed of related movement, according to the relation that arbitrfary point clearance was directly proportional to this process time, namely the relation be inversely proportional to the movement velocity of this point, by regulating horizontal direction speed of related movement, thus control the clearance of wafer radial direction.Be worth thickness according to before the metallic diaphragm measured on wafer, calculate the thickness radial distribution value on same radial direction; And then calculate the actual average thickness of the metallic diaphragm on wafer.In the present invention, can according to the actual requirements, setting residual film thickness desired value; By importing the clearance table corresponding to standard speed of related movement, technique number of times needed for formulae discovery reality, and removal rate distribution on the radius of correspondence.Import the standard speed of related movement table of an existing formula again, the speed of related movement table that final acquisition one is new, and in original formula, replace original standard speed of related movement table, save as a newly formula.
Particularly, the present invention proposes a kind of radial thickness automatic dressing method, be applicable to the flatening process of metallic diaphragm, comprise:
A. the initial film thickness of multiple measurement point of the metallic diaphragm on wafer is measured;
B. default standard speed of related movement table and the corresponding standard clearance table of default this standard speed of related movement table same is imported;
C. the residual film thickness desired value of described multiple measurement point is set; And
D. described standard speed of related movement table and described standard clearance table is revised according to described initial film thickness and described residual film thickness desired value.
Preferably, in above-mentioned radial thickness automatic dressing method, the speed of related movement in described standard speed of related movement table is the horizontal direction speed of related movement of polishing fluid shower nozzle relative to wafer.
Preferably, in above-mentioned radial thickness automatic dressing method, described step a comprises further: according to described initial film thickness, calculates the radial average film thickness of described metallic diaphragm; And according to described radial average film thickness, generate initial film thickness radial distribution table, and wherein, the quantity of the measurement point of summation/this same radial location of the initial film thickness of the measurement point of described radial average film thickness=same radial location.
Preferably, in above-mentioned radial thickness automatic dressing method, described step a comprises further: according to described initial film thickness, calculates initial total film thickness average, the quantity of summation/all measurement points of the initial film thickness of wherein said initial total film thickness average=all measurement points.
Preferably, in above-mentioned radial thickness automatic dressing method, described step b comprises further: according to described standard clearance table, calculates standard clearance grand mean, the quantity of summation/all measurement points of the standard clearance of wherein said standard clearance grand mean=all measurement points.
Preferably, in above-mentioned radial thickness automatic dressing method, described steps d comprises further: according to described initial total film thickness average, standard clearance grand mean and residual film thickness desired value, calculates the technique number of times needed for reality; According to described initial film thickness radial distribution table, residual film thickness desired value and described technique number of times, calculate the revised clearance of any measurement point, then generate revised radial clearance distribution table according to corresponding radius; According to described standard clearance table, standard speed of related movement table and revised radial clearance distribution table, generate revised speed of related movement table.
Preferably, in above-mentioned radial thickness automatic dressing method, the initial total film thickness average-residual film thickness of described technique number of times=INT(()/standard clearance grand mean)+1.
Preferably, in above-mentioned radial thickness automatic dressing method, revised clearance=((the residual film thickness desired value of initial film thickness-this measurement point of this measurement point)/technique number of times of described any measurement point.
Preferably, in above-mentioned radial thickness automatic dressing method, in described revised speed of related movement table, the speed of related movement * of speed of related movement=this measurement point in standard speed of related movement table (the revised clearance of standard clearance/this measurement point of this measurement point) of revised any measurement point.
Method of the present invention, by the control to the speed of related movement on same Radius, controls clearance, final correction wafer radial thickness nonunf ormity.
Should be appreciated that more than the present invention generality describe and the following detailed description be all exemplary and explanat, and be intended to for as claimed in claim the invention provides further explanation.
Accompanying drawing explanation
Comprising accompanying drawing is further understand the present invention for providing, and they are included and form a application's part, and accompanying drawing shows embodiments of the invention, and plays the effect explaining the principle of the invention together with this specification.In accompanying drawing:
Fig. 1 shows an example of the equipment being suitable for radial thickness automatic dressing method of the present invention.
Fig. 2 shows the flow chart according to general principle of the present invention.
Fig. 3 shows the flow chart of an embodiment according to radial thickness automatic dressing method of the present invention.
Fig. 4 diagrammatically illustrates a standard speed of related movement table.
Fig. 5 diagrammatically illustrates the corresponding standard clearance table of same standard speed of related movement.
Fig. 6 diagrammatically illustrates an example of a revised clearance table.
Fig. 7 diagrammatically illustrates an example of a revised speed of related movement table.
Embodiment
With detailed reference to accompanying drawing, embodiments of the invention are described now.Now with detailed reference to the preferred embodiments of the present invention, its example is shown in the drawings.In the case of any possible, in all of the figs the identical mark of use is represented same or analogous part.In addition, although the term used in the present invention selects from public term, but some terms mentioned in specification of the present invention may be that applicant selects by his or her judgement, its detailed meanings illustrates in the relevant portion of description herein.In addition, require not only to pass through used actual terms, but the meaning that also will be contained by each term understands the present invention.
Fig. 1 shows an example of the equipment being suitable for radial thickness automatic dressing method of the present invention.As shown in the figure, this equipment is a non-stress polishing (SFP) equipment 100.In device 100, wafer 101 is fixed on fixture 102.Rotating shaft 103 drives the related wafer 101 of fixture 102 to rotate in the horizontal direction together.Polishing fluid 105 is injected on a surface of wafer 101 by polishing fluid shower nozzle 104, implements planarization polishing.Wherein, the two poles of the earth of power supply 106 are connected to shower nozzle 104 and wafer 101 respectively.It will be appreciated, of course, that the present invention is not merely applicable to SFP equipment 100 as shown in Figure 1, the present invention and principle thereof also can be applied to other similar flattening devices.
Forward Fig. 2 to now, the radial thickness automatic dressing method 200 being applicable to the flatening process of metallic diaphragm of the present invention mainly comprises:
Step 201: the initial film thickness measuring multiple measurement point of the metallic diaphragm on wafer;
Step 202: import the standard speed of related movement table and the corresponding standard clearance table of default this standard speed of related movement table same preset;
Step 203: the residual film thickness desired value setting the plurality of measurement point; And
Step 204: revise this standard speed of related movement table and this standard clearance table according to this initial film thickness and this residual film thickness desired value.
Preferably, in above-mentioned radial thickness automatic dressing method 200, the speed of related movement in standard speed of related movement table is the horizontal direction speed of related movement of polishing fluid shower nozzle relative to wafer.
Fig. 3 shows the flow chart of an embodiment according to radial thickness automatic dressing method of the present invention.A specific embodiment of the present invention is discussed in more detail below in conjunction with Fig. 3.
First, the initial film thickness (step 301) of multiple measurement point of the metallic diaphragm on wafer is measured.Such as, this thickness can be the overall thickness of each measurement point on whole wafer, or also can be the thickness of radial X-axis or Y-axis.
Then, according to this initial film thickness, calculate the radial average film thickness of this metallic diaphragm, and then generate initial film thickness radial distribution table (step 302) according to this radial average film thickness.Wherein, the quantity of the measurement point of summation/this same radial location of the initial film thickness of the measurement point of this radial average film thickness=same radial location.
In addition, according to this initial film thickness, initial total film thickness average (step 303) can also be calculated, wherein the quantity of summation/all measurement points of the initial film thickness of this initial total film thickness average=all measurement point.
And then, import standard speed of related movement table (step 306) preset and corresponding standard clearance table (step 304) of this standard speed of related movement table same preset.
According to this standard clearance table, calculate standard clearance grand mean (step 305), the wherein quantity of summation/all measurement points of the standard clearance of this standard clearance grand mean=all measurement point.
Then, the residual film thickness desired value (step 307) of the plurality of measurement point is set.
Finally, this standard speed of related movement table and this standard clearance table is revised according to this initial film thickness and this residual film thickness desired value.Preferably, this step may further include: according to this initial total film thickness average, standard clearance grand mean and residual film thickness desired value, calculate the technique number of times (step 308) needed for reality, the such as initial total film thickness average-residual film thickness of this technique number of times=INT(()/standard clearance grand mean)+1; According to this initial film thickness radial distribution table, residual film thickness desired value and this technique number of times, calculate the revised clearance of any measurement point, the revised clearance of such as this any measurement point=((the residual film thickness desired value of initial film thickness-this measurement point of this measurement point)/technique number of times, then generate revised radial clearance distribution table (step 309) according to corresponding radius; According to this standard clearance table, standard speed of related movement table and revised radial clearance distribution table, generate revised speed of related movement table (step 310), such as in this revised speed of related movement table, the speed of related movement * of speed of related movement=this measurement point in standard speed of related movement table (the revised clearance of standard clearance/this measurement point of this measurement point) of revised any measurement point; And be automatically imported original formula, separately deposit a newly formula (step 311) after replacing the standard speed of related movement table in this original formula.
In sum, the original depth of the metallic diaphragm that radial thickness automatic dressing method of the present invention can obtain according to actual measurement and set residual film thickness desired value, revise the standard speed of related movement table of standard clearance table and standard recipe, thus optimize metal flattening film layer technique and the uniformity of the metallic diaphragm thickness distribution of raising after this flatening process process.
Those skilled in the art can be obvious, can carry out various modifications and variations and without departing from the spirit and scope of the present invention to above-mentioned exemplary embodiment of the present invention.Therefore, be intended to that the present invention is covered and drop within the scope of appended claims and equivalent arrangements thereof to amendment of the present invention and modification.
Claims (9)
1. a radial thickness automatic dressing method, is characterized in that, is applicable to the flatening process of metallic diaphragm, comprises:
A. the initial film thickness of multiple measurement point of the metallic diaphragm on wafer is measured;
B. default standard speed of related movement table and the corresponding standard clearance table of default this standard speed of related movement table same is imported;
C. the residual film thickness desired value of described multiple measurement point is set; And
D. described standard speed of related movement table and described standard clearance table is revised according to described initial film thickness and described residual film thickness desired value.
2. radial thickness automatic dressing method as claimed in claim 1, it is characterized in that, the speed of related movement in described standard speed of related movement table is the horizontal direction speed of related movement of polishing fluid shower nozzle relative to wafer.
3. radial thickness automatic dressing method as claimed in claim 1, it is characterized in that, described step a comprises further:
According to described initial film thickness, calculate the radial average film thickness of described metallic diaphragm; And
According to described radial average film thickness, generate initial film thickness radial distribution table,
Wherein, the quantity of the measurement point of summation/this same radial location of the initial film thickness of the measurement point of described radial average film thickness=same radial location.
4. radial thickness automatic dressing method as claimed in claim 3, it is characterized in that, described step a comprises further:
According to described initial film thickness, calculate initial total film thickness average, the quantity of summation/all measurement points of the initial film thickness of wherein said initial total film thickness average=all measurement points.
5. radial thickness automatic dressing method as claimed in claim 4, it is characterized in that, described step b comprises further:
According to described standard clearance table, calculate standard clearance grand mean, the quantity of summation/all measurement points of the standard clearance of wherein said standard clearance grand mean=all measurement points.
6. radial thickness automatic dressing method as claimed in claim 5, it is characterized in that, described steps d comprises further:
According to described initial total film thickness average, standard clearance grand mean and residual film thickness desired value, calculate the technique number of times needed for reality;
According to described initial film thickness radial distribution table, residual film thickness desired value and described technique number of times, calculate the revised clearance of any measurement point, then generate revised radial clearance distribution table according to corresponding radius;
According to described standard clearance table, standard speed of related movement table and revised radial clearance distribution table, generate revised speed of related movement table.
7. radial thickness automatic dressing method as claimed in claim 6, is characterized in that, the initial total film thickness average-residual film thickness of described technique number of times=INT(()/standard clearance grand mean)+1.
8. radial thickness automatic dressing method as claimed in claim 6, is characterized in that, revised clearance=((the residual film thickness desired value of initial film thickness-this measurement point of this measurement point)/technique number of times of described any measurement point.
9. radial thickness automatic dressing method as claimed in claim 6, it is characterized in that, in described revised speed of related movement table, the speed of related movement * of speed of related movement=this measurement point in standard speed of related movement table (the revised clearance of standard clearance/this measurement point of this measurement point) of revised any measurement point.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410116119.5A CN104952787B (en) | 2014-03-26 | 2014-03-26 | Automatic radial thickness trimming method |
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| CN201410116119.5A CN104952787B (en) | 2014-03-26 | 2014-03-26 | Automatic radial thickness trimming method |
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| CN108342694A (en) * | 2018-01-31 | 2018-07-31 | 昆山国显光电有限公司 | Evaporation coating method and evaporation coating device |
| CN113172747A (en) * | 2021-03-31 | 2021-07-27 | 佛山市恒力泰机械有限公司 | Method, device and system for correcting and controlling thickness of filler |
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| CN108342694A (en) * | 2018-01-31 | 2018-07-31 | 昆山国显光电有限公司 | Evaporation coating method and evaporation coating device |
| CN113172747A (en) * | 2021-03-31 | 2021-07-27 | 佛山市恒力泰机械有限公司 | Method, device and system for correcting and controlling thickness of filler |
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