CN104952787B - Automatic radial thickness trimming method - Google Patents
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Abstract
The invention provides an automatic radial thickness trimming method, which is suitable for a planarization process of a metal film layer and comprises the following steps: a. measuring initial film thicknesses of a plurality of measuring points of a metal film layer on a wafer; b. leading in a preset standard relative motion speed table and a preset standard removal rate table corresponding to the standard relative motion speed table; c. setting residual film thickness target values at the plurality of measurement points; correcting the standard relative movement velocity table and the standard removal rate table according to the initial film thickness and the residual film thickness target value. The method controls the removal rate by controlling the relative movement speed on the same radius, and finally corrects the non-uniformity of the radial thickness distribution of the wafer.
Description
Technical Field
The invention relates to a semiconductor processing technology, in particular to a radial thickness automatic trimming method suitable for a planarization technology of a metal film layer.
Background
The three-dimensional stacked integrated circuit packaging technology (3D ICPackage) based on the through-silicon via (TSV) technology is the latest packaging technology at present, and has the advantages of minimum size and quality, effective reduction of parasitic effect, improvement of chip speed, reduction of power consumption, and the like. The TSV technology is the latest technology for realizing interconnection between chips by making vertical conduction between the chips, and as an alternative technology of wire bonding, the TSV technology forms a through hole structure penetrating through a silicon wafer, which can greatly shorten the interconnection distance, thereby eliminating the limitation on the number of chip stacks. So that the three-dimensional lamination of the chip can be applied in wider fields.
The conventional through silicon via uses copper as a metal layer, and the front surface process of the copper metal layer mainly comprises the following steps of a copper seed layer physical vapor deposition Process (PVD), a copper film electroplating process (ECP), an annealing process (Anneal), and a chemical mechanical planarization process (CMP). Because of the large aspect ratio of vias in TSV technology, the ratio of the depth to the width is generally from 5: 1 to 10: 1, even 20: 1. the large aspect ratio can cause that the copper in the hole can not be filled in the copper plating process; the deep hole can be well filled through the optimized copper electroplating process, but the metal copper layer on the surface of the wafer is too thick, generally 3-5 microns, and the metal internal stress is increased along with the increase of the thickness, so that the metal surface stress of the TSV silicon wafer is larger than that of the metal layer of the traditional wafer, and the silicon wafer is warped. In the subsequent annealing process, the metal above the deep hole forms a bulge due to the fact that the metal layer is thick and the metal grains grow. The two points can cause the wafer to be broken when the traditional CMP chemical mechanical planarization process is used, and the metal bulge above the deep hole cannot be effectively planarized; in addition, thicker copper films increase the time and process cost of the planarization process step.
In 3D through silicon via applications, since through silicon vias typically have a high aspect ratio of 10: 1, even 20: 1; the copper plating process takes a long time to fill the through holes with metallic copper, resulting in an excessively thick copper covering layer on the surface. Therefore, more copper capping layers need to be removed in the subsequent chemical mechanical planarization process, which increases the process time and the process cost. The stress-free copper polishing process can effectively solve the problems of stress and cost in the planarization process, but the overall copper film surface film thickness of the wafer after the copper plating process is not uniform to a certain extent, and the thickness difference is usually in the radial direction; it is necessary to perform corrections during planarization to ensure consistent recess values in the final wiring or via.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides an automatic radial thickness trimming method. The method controls the radial removal rate of the wafer by adjusting the relative movement speed in the horizontal direction according to the relationship that the removal rate of any point is in direct proportion to the process time of the point, namely in inverse proportion to the movement speed of the point. Calculating the radial distribution value of the film thickness in the same radius direction according to the previous value thickness of the metal film layer on the measured wafer; and then calculating the actual average thickness of the metal film layer on the wafer. In the invention, the target value of the residual film thickness can be set according to the actual requirement; and calculating the actually required process times and the corresponding removal rate distribution on the radius according to a formula by introducing a removal rate table corresponding to the standard relative movement speed. And introducing a standard relative motion speed table of the existing formula, finally obtaining a new relative motion speed table, replacing the original standard relative motion speed table in the original formula, and storing as a new formula.
Specifically, the invention provides an automatic trimming method for radial thickness, which is suitable for a planarization process of a metal film layer and comprises the following steps:
a. measuring initial film thicknesses of a plurality of measuring points of a metal film layer on a wafer;
b. leading in a preset standard relative motion speed table and a preset standard removal rate table corresponding to the standard relative motion speed table;
c. setting residual film thickness target values at the plurality of measurement points; and
d. the standard relative movement velocity table and the standard removal rate table are corrected in accordance with the initial film thickness and the residual film thickness target value.
Preferably, in the above automatic radial thickness trimming method, the relative movement speed in the standard relative movement speed table is a horizontal direction relative movement speed of the polishing liquid jet head with respect to the wafer.
Preferably, in the above method for automatically trimming a radial thickness, the step a further includes: calculating the radial average film thickness of the metal film layer according to the initial film thickness; and generating an initial film thickness radial distribution table according to the radial average film thickness, wherein the radial average film thickness = the sum of the initial film thicknesses of the measurement points at the same radial position/the number of the measurement points at the same radial position.
Preferably, in the above method for automatically trimming a radial thickness, the step a further includes: and calculating an initial total film thickness mean value according to the initial film thickness, wherein the initial total film thickness mean value = the sum of the initial film thicknesses of all the measurement points/the number of all the measurement points.
Preferably, in the above method for automatically trimming a radial thickness, the step b further includes: calculating a standard removal rate total mean value according to the standard removal rate table, wherein the standard removal rate total mean value = the sum of the standard removal rates of all the measurement points/the number of all the measurement points.
Preferably, in the above method for automatically trimming a radial thickness, the step d further includes: calculating the actually required process times according to the initial total film thickness average value, the standard removal rate total average value and the residual film thickness target value; calculating the corrected removal rate of any measuring point according to the initial film thickness radial distribution table, the residual film thickness target value and the process times, and generating a corrected radial removal rate distribution table according to the corresponding radius; and generating a corrected relative motion velocity table according to the standard removal rate table, the standard relative motion velocity table and the corrected radial removal rate distribution table.
Preferably, in the above-described automatic radial thickness trimming method, the process number = INT ((initial total film thickness mean-remaining film thickness)/standard removal rate total mean) + 1.
Preferably, in the above automatic radial thickness trimming method, the corrected removal rate = ((initial film thickness of the measurement point — target value of remaining film thickness of the measurement point)/process number of times at the arbitrary measurement point.
Preferably, in the above-described automatic radial thickness trimming method, in the corrected relative movement velocity table, the relative movement velocity of any measured point after correction = the relative movement velocity of the measured point in the standard relative movement velocity table (standard removal rate of the measured point/corrected removal rate of the measured point).
The method controls the removal rate by controlling the relative movement speed on the same radius, and finally corrects the non-uniformity of the radial thickness distribution of the wafer.
It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to provide further explanation of the invention as claimed.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the principle of the invention. In the drawings:
fig. 1 shows one example of an apparatus to which the radial thickness automatic trimming method of the present invention is applied.
Fig. 2 shows a flow chart according to the basic principle of the invention.
FIG. 3 illustrates a flow diagram of one embodiment of an automatic radial thickness trim method according to the present invention.
Figure 4 schematically shows a standard relative motion speedometer.
Fig. 5 schematically shows a standard removal rate table corresponding to a standard relative movement speed.
Fig. 6 schematically shows an example of a modified erasure rate table.
Fig. 7 schematically shows an example of a corrected relative motion velocity chart.
Detailed Description
Embodiments of the present invention will now be described in detail with reference to the accompanying drawings. Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts. Further, although the terms used in the present invention are selected from publicly known and used terms, some of the terms mentioned in the description of the present invention may be selected by the applicant at his or her discretion, the detailed meanings of which are described in relevant parts of the description herein. Furthermore, it is required that the present invention is understood, not simply by the actual terms used but by the meaning of each term lying within.
Fig. 1 shows one example of an apparatus to which the radial thickness automatic trimming method of the present invention is applied. As shown, the apparatus is a Stress Free Polishing (SFP) apparatus 100. In apparatus 100, wafer 101 is secured to a chuck 102. The spindle 103 drives the chuck 102 to rotate in a horizontal direction together with the wafer 101. The polishing liquid head 104 sprays a polishing liquid 105 onto one surface of the wafer 101 to perform planarization polishing. Wherein two poles of the power source 106 are connected to the showerhead 104 and the wafer 101, respectively. Of course, it is to be understood that the present invention is not limited to use with the SFP apparatus 100 shown in FIG. 1, and that the present invention and its principles may be applied to other similar planarization apparatuses.
Turning now to fig. 2, the method 200 for automatically trimming radial thickness for a planarization process of a metal film layer according to the present invention mainly comprises:
step 201: measuring initial film thicknesses of a plurality of measuring points of a metal film layer on a wafer;
step 202: leading in a preset standard relative motion speed table and a preset standard removal rate table corresponding to the standard relative motion speed table;
step 203: setting residual film thickness target values at the plurality of measurement points; and
step 204: the standard relative movement velocity table and the standard removal rate table are corrected based on the initial film thickness and the residual film thickness target value.
Preferably, in the above-mentioned radial thickness automatic trimming method 200, the relative movement speed in the standard relative movement speed table is a horizontal direction relative movement speed of the polishing liquid jet head with respect to the wafer.
FIG. 3 illustrates a flow diagram of one embodiment of an automatic radial thickness trim method according to the present invention. One particular embodiment of the present invention is discussed in more detail below in conjunction with fig. 3.
First, the initial film thicknesses at a plurality of measurement points of a metal film layer on a wafer are measured (step 301). For example, the thickness may be a global thickness for each measurement point across the wafer, or may be a radial X-axis or Y-axis thickness.
Next, a radial average film thickness of the metal film layer is calculated from the initial film thickness, and an initial film thickness radial distribution table is generated from the radial average film thickness (step 302). Wherein the radial average film thickness = the sum of the initial film thicknesses of the measurement points at the same radial position/the number of measurement points at the same radial position.
Further, an initial total film thickness mean value = the sum of the initial film thicknesses of all the measurement points/the number of all the measurement points may be calculated from the initial film thickness (step 303).
Further, a preset standard relative movement velocity table is imported (step 306) and a preset standard removal rate table corresponding to the standard relative movement velocity table is imported (step 304).
From the standard removal rate table, a standard removal rate total mean is calculated (step 305), wherein the standard removal rate total mean = the sum of standard removal rates of all measurement points/the number of all measurement points.
Then, the residual film thickness target values at the plurality of measurement points are set (step 307).
Finally, the standard relative movement velocity table and the standard removal rate table are corrected according to the initial film thickness and the residual film thickness target value. Preferably, the step may further comprise: calculating an actually required process frequency, for example, the process frequency = INT ((initial total film thickness mean value-remaining film thickness)/standard removal rate total mean value) +1, based on the initial total film thickness mean value, standard removal rate total mean value, and remaining film thickness target value (step 308); calculating a corrected removal rate of an arbitrary measurement point, for example, a corrected removal rate of the arbitrary measurement point = ((initial film thickness of the measurement point-residual film thickness target value of the measurement point)/process count, and generating a corrected radial removal rate distribution table in accordance with a corresponding radius (step 309), generating a corrected relative motion velocity table, for example, in which a relative motion velocity of the arbitrary measurement point after correction = a relative motion velocity of the measurement point in a standard relative motion velocity table (standard removal rate of the measurement point/corrected removal rate of the measurement point) in the standard relative motion velocity table, based on the standard removal rate table, the standard relative motion velocity table, and the corrected radial removal rate distribution table (step 310), and automatically introducing an original recipe, a new recipe is added after replacing the standard relative motion velocity table in the original recipe (step 311).
In summary, the automatic radial thickness trimming method of the present invention can correct the standard removal rate table and the standard relative motion velocity table of the standard recipe according to the initial thickness of the metal film obtained by actual measurement and the set target value of the residual film thickness, so as to optimize the planarization process of the metal film and improve the uniformity of the thickness distribution of the metal film processed by the planarization process.
It will be apparent to those skilled in the art that various modifications and variations can be made to the above-described exemplary embodiments of the present invention without departing from the spirit and scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Claims (8)
1. The automatic radial thickness trimming method is suitable for a planarization process of a metal film layer, and comprises the following steps of:
a. measuring initial film thicknesses of a plurality of measuring points of a metal film layer on a wafer;
b. introducing a preset standard relative motion speed table and a preset standard removal rate table corresponding to the standard relative motion speed table, wherein the relative motion speed in the standard relative motion speed table is the horizontal relative motion speed of the polishing solution nozzle relative to the wafer;
c. setting residual film thickness target values at the plurality of measurement points; and
d. the standard relative movement velocity table and the standard removal rate table are corrected in accordance with the initial film thickness and the residual film thickness target value.
2. The automatic radial thickness trimming method of claim 1, wherein the step a further comprises:
calculating the radial average film thickness of the metal film layer according to the initial film thickness; and
generating an initial film thickness radial distribution table according to the radial average film thickness,
wherein the radial average film thickness is the sum of the initial film thicknesses of the measurement points at the same radial position/the number of the measurement points at the same radial position.
3. The automatic radial thickness trimming method of claim 2, wherein the step a further comprises:
and calculating an initial total film thickness mean value according to the initial film thickness, wherein the initial total film thickness mean value is the sum of the initial film thicknesses of all the measuring points/the number of all the measuring points.
4. A method of automatically trimming radial thickness as recited in claim 3, wherein step b further comprises:
and calculating a standard removal rate total mean value according to the standard removal rate table, wherein the standard removal rate total mean value is the sum of the standard removal rates of all the measuring points/the number of all the measuring points.
5. The automatic radial thickness trimming method of claim 4, wherein the step d further comprises:
calculating the actually required process times according to the initial total film thickness average value, the standard removal rate total average value and the residual film thickness target value;
calculating the corrected removal rate of any measuring point according to the initial film thickness radial distribution table, the residual film thickness target value and the process times, and generating a corrected radial removal rate distribution table according to the corresponding radius;
and generating a corrected relative motion velocity table according to the standard removal rate table, the standard relative motion velocity table and the corrected radial removal rate distribution table.
6. The automatic radial thickness trimming method according to claim 5, wherein the process number is INT ((initial total film thickness average-residual film thickness)/standard removal rate total average) + 1.
7. The automatic radial thickness trimming method according to claim 5, wherein the corrected removal rate at any measurement point is ((initial film thickness at the measurement point-target film thickness remaining at the measurement point)/process number.
8. The automatic radial thickness trimming method according to claim 5, wherein in the corrected relative motion velocity table, the relative motion velocity of any corrected measurement point is the relative motion velocity of the measurement point in a standard relative motion velocity table (standard removal rate of the measurement point/corrected removal rate of the measurement point).
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| CN107471084B (en) * | 2017-08-31 | 2019-01-18 | 清华大学 | Surface polishing degree control method, device and the polissoir of polissoir |
| CN108342694B (en) * | 2018-01-31 | 2020-01-31 | 昆山国显光电有限公司 | Vapor deposition method and vapor deposition apparatus |
| CN113172747B (en) * | 2021-03-31 | 2022-09-09 | 佛山市恒力泰机械有限公司 | Filler thickness correction control method, device and system |
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| US7432205B2 (en) * | 2005-12-15 | 2008-10-07 | United Microelectronics Corp. | Method for controlling polishing process |
| CN101882595B (en) * | 2009-05-08 | 2014-07-09 | 盛美半导体设备（上海）有限公司 | Method and device for removing barrier layer |
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| CN1412823A (en) * | 2001-10-19 | 2003-04-23 | 日本电气株式会社 | Polishing method and device capable of high precision controlling polishing time |
| CN101427351A (en) * | 2002-07-22 | 2009-05-06 | Acm研究公司 | Adaptive electropolishing using thickness measurements and removal of barrier and sacrificial layers |
| CN1624878A (en) * | 2003-12-05 | 2005-06-08 | 台湾积体电路制造股份有限公司 | Method for polishing material layer on a semiconductor wafer |
| CN1744285A (en) * | 2004-09-02 | 2006-03-08 | 台湾积体电路制造股份有限公司 | Manufacturing system |
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