CN106695567B - Flow compensation method - Google Patents
Flow compensation method Download PDFInfo
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- CN106695567B CN106695567B CN201510420834.2A CN201510420834A CN106695567B CN 106695567 B CN106695567 B CN 106695567B CN 201510420834 A CN201510420834 A CN 201510420834A CN 106695567 B CN106695567 B CN 106695567B
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Abstract
The invention discloses a flow compensation method, which comprises the following steps: selecting one cavity as a reference cavity, inputting liquid into the reference cavity, ejecting the liquid by a nozzle of the reference cavity to form a liquid column, recording the height of the liquid column as a reference height, and recording the liquid flow of the reference cavity as a reference flow. Selecting another cavity as a comparison cavity, inputting liquid into the comparison cavity, spraying the liquid by a spray head of the comparison cavity to form a liquid column, adjusting the fluid flow of the comparison cavity to enable the liquid column of the comparison cavity to reach the reference height, recording the liquid flow of the comparison cavity as the comparison flow, and calculating the difference value between the comparison flow and the reference flow as the compensation value of the comparison cavity. And continuously selecting other cavities as comparison cavities and respectively calculating the compensation value of each comparison cavity until the compensation values of all the cavities participating in the process flow are calculated. In the process flow, the liquid provided to the reference cavity is the reference flow, and the liquid flow provided to other cavities is as follows: reference flow + compensation value for the chamber.
Description
Technical Field
The present invention relates to semiconductor manufacturing processes, and more particularly, to a method for controlling a flow rate of a liquid in a semiconductor manufacturing process.
Background
With the development of the semiconductor industry, Very Large Scale Integration (VLSI) and Ultra Large Scale Integration (ULSI) circuits have been widely used. Compared with the prior integrated circuit, the very large scale integrated circuit and the very large scale integrated circuit have more complex multilayer structures and smaller feature sizes. The stress-free planarization technique can overcome the defects of the traditional chemical mechanical planarization technique in the integrated circuit with ultra-fine feature size. The stress-free polishing technology is based on an electrochemical principle and can planarize a metal interconnection structure without mechanical stress. The stress-free polishing technology needs to use a conductive polishing solution, and the polishing solution is sprayed to the surface of the wafer through a spray head. The spray head is also used as an electrode in the electrochemical polishing process and is matched with a clamp with the electrode to manufacture an electric field for carrying out the electrochemical polishing process on the surface of the wafer in a specific area.
FIG. 1 shows a schematic diagram of a polishing solution sprayed by a nozzle. In the embodiment shown in fig. 1, the head 102 sprays polishing liquid upward, and a certain liquid pressure and flow rate are provided inside the head, so that a liquid column 104 with a certain height is formed above the head. The fluid column 104 contacts the surface (typically the bottom surface) of the wafer to form a fluid coverage area within which the electrochemical polishing process is performed.
In the electrochemical polishing process, the applied current voltage, the moving speed of the wafer, and the liquid coverage (i.e., polishing range) actually formed by the slurry column determine the removal rate and uniformity of the polishing process. In the fields of very large scale integrated circuits and very large scale integrated circuits, which have extremely high requirements for uniformity, the uniformity of various process parameters is very important. Since wafers may need to be processed in different process chambers, it is desirable to maintain process parameters consistent from process chamber to process chamber. Among these process parameters, the applied voltage current and the movement speed of the wafer are directly controllable parameters, and thus are easily controllable. However, the polishing range is determined by the slurry columns sprayed by the spray heads, and is influenced by a plurality of factors, and thus is the most important parameter for influencing the uniformity of the process result.
Disclosure of Invention
The invention aims to provide a method for realizing liquid column height uniformity by adjusting flow.
According to an embodiment of the present invention, a method for flow compensation is provided, including:
selecting a cavity as a reference cavity, inputting liquid into the reference cavity, ejecting the liquid by a nozzle of the reference cavity to form a liquid column, recording the height of the liquid column as a reference height, and recording the liquid flow of the reference cavity as a reference flow;
selecting another cavity as a comparison cavity, inputting liquid into the comparison cavity, spraying the liquid by a spray head of the comparison cavity to form a liquid column, adjusting the fluid flow of the comparison cavity to enable the liquid column of the comparison cavity to reach a reference height, recording the liquid flow of the comparison cavity as a comparison flow, and calculating the difference value between the comparison flow and the reference flow as a compensation value of the comparison cavity;
continuously selecting other cavities as comparison cavities and respectively calculating the compensation value of each comparison cavity until the compensation values of all the cavities participating in the process flow are calculated;
in the process flow, the liquid provided to the reference cavity is the reference flow, and the liquid flow provided to other cavities is as follows: reference flow + compensation value for the chamber.
In one embodiment, the liquid is a polishing liquid.
In one embodiment, the spray head sprays liquid upward.
In one embodiment, the compensation values for each control chamber are recorded in a database for recall by the control system.
The invention uses different liquid flow rates in different process chambers, eliminates the influence of other factors on the height of the liquid column through flow compensation, and realizes the unification of the height of the liquid column.
Drawings
The above and other features, properties and advantages of the present invention will become more apparent from the following description of the embodiments with reference to the accompanying drawings in which like reference numerals denote like features throughout the several views, wherein:
FIG. 1 shows a schematic diagram of a polishing solution sprayed by a nozzle.
Fig. 2 discloses a flow chart of a flow compensation method according to an embodiment of the invention.
Detailed Description
The polishing area of the wafer surface is determined primarily by the height of the liquid column of polishing liquid in contact with the wafer surface. The liquid column height is a direct result of the liquid flow and liquid pressure within the spray head. In different process chambers, the liquid pressure at each spray head is different because the diameter of the spray head, the length of a pipeline from a liquid supply pump to the spray head and the arrangement scheme are different. Thus, if the same liquid flow rate is supplied to the nozzles in different process chambers, the height of the liquid columns of the polishing liquid to be discharged may be different due to the difference in liquid pressure, resulting in a difference in polishing area, resulting in a lack of uniformity. Because the diameter of the spray head, the length of the pipeline from the liquid supply pump to the spray head and the arrangement scheme cannot be changed, the liquid flow in different process chambers is adjusted to enable the liquid column height to be uniform, and therefore the liquid column height is a reasonable choice.
Generally, the height of the liquid column at the same flow rate is proportional to the final outlet end liquid pressure, i.e., is affected by the length of the piping and the vertical height difference from the spray head to the feed pump. As the length of the tubing increases, the pressure drop increases and the flow rate required to reach the standard liquid column height increases. And the vertical height difference of the cavity also influences the final liquid column height, and when the vertical fall of the cavity from the liquid supply pump is larger, the flow required for reaching the standard liquid column height is also larger.
The invention provides a flow compensation method, which realizes the unification of the heights of liquid columns in all process chambers through flow compensation in different process chambers.
Referring to fig. 2, fig. 2 discloses a flow chart of a flow compensation method according to an embodiment of the invention, which includes the following steps:
s1, selecting one cavity as a reference cavity, inputting liquid into the reference cavity, ejecting the liquid by a nozzle of the reference cavity to form a liquid column, recording the height of the liquid column as a reference height, and recording the liquid flow of the reference cavity as a reference flow.
S2, selecting another cavity as a comparison cavity, inputting liquid into the comparison cavity, ejecting the liquid by a nozzle of the comparison cavity to form a liquid column, adjusting the fluid flow of the comparison cavity to enable the liquid column of the comparison cavity to reach a reference height, recording the liquid flow of the comparison cavity as a comparison flow, and calculating the difference between the comparison flow and the reference flow as a compensation value of the comparison cavity.
And S3, continuously selecting other cavities as comparison cavities and respectively calculating the compensation value of each comparison cavity until the compensation values of all the cavities participating in the process flow are calculated. The compensation values for each of the other chambers except the reference chamber are recorded in a database and recalled by the control system.
S4, in the process flow, the liquid provided to the reference cavity is the reference flow, and the liquid flow provided to other cavities is: reference flow + compensation value for the chamber. The control system calls the compensation value of each cavity from the database, and the compensation value is applied to each cavity after being superposed on the reference flow.
The process is suitable for electrochemical polishing process, and the liquid sprayed by the spray head is polishing liquid. Generally, the method is used for controlling an apparatus in which a head ejects liquid upward to form a liquid column.
The invention uses different liquid flow rates in different process chambers, eliminates the influence of other factors on the height of the liquid column through flow compensation, and realizes the unification of the height of the liquid column.
The embodiments described above are provided to enable persons skilled in the art to make or use the invention and that modifications or variations can be made to the embodiments described above by persons skilled in the art without departing from the inventive concept of the present invention, so that the scope of protection of the present invention is not limited by the embodiments described above but should be accorded the widest scope consistent with the innovative features set forth in the claims.
Claims (4)
1. A method of flow compensation, comprising:
selecting a cavity as a reference cavity, inputting liquid into the reference cavity, ejecting the liquid by a nozzle of the reference cavity to form a liquid column, recording the height of the liquid column as a reference height, and recording the liquid flow of the reference cavity as a reference flow;
selecting another cavity as a comparison cavity, inputting liquid into the comparison cavity, spraying the liquid by a spray head of the comparison cavity to form a liquid column, adjusting the fluid flow of the comparison cavity to enable the liquid column of the comparison cavity to reach a reference height, recording the liquid flow of the comparison cavity as a comparison flow, and calculating the difference value between the comparison flow and the reference flow as a compensation value of the comparison cavity;
continuously selecting other cavities as comparison cavities and respectively calculating the compensation value of each comparison cavity until the compensation values of all the cavities participating in the process flow are calculated;
in the process flow, the liquid provided to the reference cavity is the reference flow, and the liquid flow provided to other cavities is as follows: reference flow + compensation value for the chamber.
2. A flow compensation method as claimed in claim 1, wherein:
the liquid is a polishing liquid.
3. The flow compensation method of claim 1,
the spray head sprays liquid upward.
4. The flow compensation method of claim 1,
and recording the compensation value of each comparison cavity in a database for the control system to call.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510420834.2A CN106695567B (en) | 2015-07-17 | 2015-07-17 | Flow compensation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510420834.2A CN106695567B (en) | 2015-07-17 | 2015-07-17 | Flow compensation method |
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| Publication Number | Publication Date |
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| CN106695567A CN106695567A (en) | 2017-05-24 |
| CN106695567B true CN106695567B (en) | 2020-03-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5333793A (en) * | 1993-07-21 | 1994-08-02 | T-Systems International, Inc. | Drip irrigation hose with pressure compensation and method for its manufacture |
| GR20000100065A (en) * | 2000-02-28 | 2001-10-31 | Emitter with water inlet filter and method of assembly thereof | |
| KR20030022341A (en) * | 2000-07-31 | 2003-03-15 | 미쓰이 긴조꾸 고교 가부시키가이샤 | Flow metering method and flowmeter |
| US7160739B2 (en) * | 2001-06-19 | 2007-01-09 | Applied Materials, Inc. | Feedback control of a chemical mechanical polishing device providing manipulation of removal rate profiles |
| CN1182572C (en) * | 2002-04-03 | 2004-12-29 | 华邦电子股份有限公司 | Abrasion method using dynamic calculation processing parameter |
| US20040008229A1 (en) * | 2002-07-01 | 2004-01-15 | Nokia Corporation | Reconfigurable user interface |
| CN1948084A (en) * | 2006-05-18 | 2007-04-18 | 刘宏茂 | Lift force control method of rotating wing fan and vertiautomobile |
| DE102009058932B4 (en) * | 2009-12-17 | 2013-08-14 | Avl List Gmbh | System and method for measuring injection events |
| CN101966688B (en) * | 2010-07-21 | 2011-12-14 | 河北工业大学 | Low-pressure CMP (Chemico-mechanical Polishing) method for grand-scale integrated circuit copper wiring surface |
| CN102032167B (en) * | 2010-12-10 | 2012-07-04 | 浙江工业大学 | Flow compensation technology of digital frequency conversion metering pump |
| CN103849734B (en) * | 2012-12-06 | 2015-08-26 | 宝山钢铁股份有限公司 | Based on quenching device flow control methods and the Detection & Controling device thereof of plate shape |
| CN104266691B (en) * | 2014-10-13 | 2017-05-17 | 北京光电技术研究所 | Flow rate measuring device for circulating liquid |
| CN104404183B (en) * | 2014-11-24 | 2016-04-20 | 中冶南方工程技术有限公司 | The water compensating control method of blast furnace soft water closed circulation system |
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Address after: 201203 building 4, No. 1690, Cailun Road, free trade zone, Pudong New Area, Shanghai Applicant after: Shengmei semiconductor equipment (Shanghai) Co., Ltd Address before: 201203 Shanghai City, Pudong New Area China Zhangjiang High Tech Park of Shanghai Cailun Road No. 1690 building fourth Applicant before: ACM (SHANGHAI) Inc. |
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