CN106684095B - 阵列基板及其制备方法、显示装置 - Google Patents
阵列基板及其制备方法、显示装置 Download PDFInfo
- Publication number
- CN106684095B CN106684095B CN201610930229.4A CN201610930229A CN106684095B CN 106684095 B CN106684095 B CN 106684095B CN 201610930229 A CN201610930229 A CN 201610930229A CN 106684095 B CN106684095 B CN 106684095B
- Authority
- CN
- China
- Prior art keywords
- diffuse reflection
- transparent
- layer
- metal wiring
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 4
- 238000007788 roughening Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 10
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000004380 ashing Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/136295—Materials; Compositions; Manufacture processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
本发明提供了一种阵列基板及其制备方法、显示装置。该阵列基板,包括透明衬底基板,在所述透明衬底基板上形成有金属布线和薄膜晶体管,在所述金属布线与所述透明衬底基板之间形成有漫反射层。本发明,可以在外界环境光照射在金属布线上时发生漫反射,也就减少了反射光的光强,因而可以提升对比度和增强显示效果,从而可以改善无边框显示器件的性能。
Description
技术领域
本发明属于显示技术领域,具体涉及一种阵列基板及其制备方法、显示装置。
背景技术
当前,为了在不增加电子设备的尺寸的前提下,增大显示屏幕的尺寸,越来越多的生产厂家致力于研究无边框(borderless)的显示屏幕。
图1a为传统的液晶显示装置的结构示意图,请参阅图1a,该液晶显示装置包括阵列基板Array、彩膜基板CF、液晶层LC、印制电路板PCB和背光模组BLU,如图1a的右侧图可知,印制电路板PCB需要环绕阵列基板Array的一侧面在彩膜基板CF所在侧与阵列基板Array电连接,这样,传统的液晶显示装置不能实现四面无边框。为此,如图1b所示,可将传统LCD结构中的阵列基板Array和彩膜基板CF的位置互换,由于阵列基板Array的面积相比彩膜基板CF的面积较大,data pad侧bonding印制电路板PCB时不用弯折(图1b的右侧图),这样可进一步减少data pad侧边框的尺寸,从而实现四面无边框。
但是,在实际应用中图1b所示的无边框液晶显示装置存在以下问题:当外界环境光较强时观看效果较差。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一,提出了一种阵列基板及其制备方法、显示装置。
为解决上述问题之一,本发明提供了一种阵列基板,包括透明衬底基板,在所述透明衬底基板上形成有金属布线,在所述金属布线与所述透明衬底基板之间形成有漫反射层。
优选地,所述金属布线包括数据线和栅线;在所述数据线和所述栅线中的至少一种与所述透明衬底基板之间形成有漫反射层。
优选地,在所述透明衬底基板上还形成有薄膜晶体管,在所述薄膜晶体管的栅极、源极和漏极中的至少一个与所述透明衬底基板之间形成有漫反射层。
优选地,所述透明衬底基板上还形成有公共电极,所述金属布线包括公共电极线;在所述公共电极线与所述透明衬底基板之间形成有漫反射层。
本发明还提供一种显示装置,包括依次叠置的阵列基板、液晶层、彩膜基板、和背光模组,所述阵列基板采用本发明提供的阵列基板。
本发明还提供一种阵列基板的制备方法,包括以下步骤:
提供透明衬底基板;
在所述透明衬底基板上形成金属布线,且在所述金属布线和所述透明衬底基板之间形成有漫反射层。
优选地,所述金属布线包括数据线和栅线;所述在所述透明衬底基板上形成金属布线且在所述金属布线和所述透明衬底基板之间形成有漫反射层,包括:在所述数据线和所述栅线中的至少一种与所述透明衬底基板之间形成有漫反射层。
优选地,还包括:
在所述透明衬底基板上形成薄膜晶体管:
在所述薄膜晶体管的栅极、源极和漏极中的至少一个与所述透明衬底基板之间形成有漫反射层。
优选地,所述形成漫反射层,包括:
在透明衬底基板上形成透明电极层;
在所述透明电极层上形成光刻胶层;
采用灰阶掩膜板执行一次构图工艺,使所述透明电极层形成包括需要形成漫反射层的区域和被光刻胶覆盖的用于显示的电极的图形;
对所述需要形成漫反射的区域进行处理,以使其形成所述漫反射层;
去除位于所述用于显示的电极上的光刻胶。
优选地,对所述需要形成漫反射的区域进行处理,包括:
对所述需要形成漫反射的区域的透明电极层进行等离子体处理,使透明电极层的表面粗糙化形成所述漫反射层。
本发明具有以下有益效果:
在本发明中,借助漫反射层可以在外界环境光照射在金属布线上时发生漫反射,也就减少了反射光的光强,因而可以提升对比度和增强显示效果,从而可以改善无边框显示器件的性能。
附图说明
图1a为传统的液晶显示装置的结构示意图;
图1b为现有的无边框的液晶显示装置的结构示意图;
图2为本发明提供的阵列基板的结构示意图;
图3为本发明提供的阵列基板的制备方法的流程图;
图4a-图4f为图3所示的制备方法的各个步骤对应的工艺状态示意图。
现有技术的附图标记包括:Array,阵列基板;CF,彩膜基板;LC,液晶层;PCB,印制电路板;BLU,背光模组;
本发明的附图标记包括:101,透明衬底基板;102,漫反射层;Gate,栅线和栅极;ITO,透明电极层;PR,光刻胶;GI,栅绝缘层;Active,有源区;SD,源漏电极;PVX,钝化层;2ITO,像素电极;1ITO,公共电极。
具体实施方式
为使本领域的技术人员更好地理解本发明的技术方案,下面结合附图来对本发明提供的阵列基板及其制备方法、显示装置进行详细描述。
实施例1
图2为本发明提供的阵列基板的结构示意图;请参阅图2,本发明提供的阵列基板包括透明衬底基板101,在透明衬底基板101上形成有金属布线,在金属布线与透明衬底基板101之间形成有漫反射层102,在此,本发明并不限定是在部分金属布线,还是在全部金属布线与透明衬底基板101之间设置漫反射层102。
在本发明中,借助漫反射层102可以在外界环境光照射在金属布线上时发生漫反射,也就减少了反射光的光强,因而可以提升对比度和增强显示效果,从而可以改善无边框显示器件的性能。
在本实施例中,金属布线包括数据线和栅线Gate,在此情况下,在数据线和栅线Gate中的至少一种与透明衬底基板101之间形成有漫反射层102。
优选地,在栅线Gate与透明衬底基板101之间形成有漫反射层102,这是因为:栅线Gate的线宽较大,对光的反射效果影响较大。
另外,优选地,在透明衬底基板101上还形成薄膜晶体管:在薄膜晶体管的栅极Gate、源极和漏极(SD)中的至少一个与透明衬底基板101之间形成有漫反射层102,具体地,如图2所示,由于栅极Gate与透明衬底基板101距离最近,因此,仅需要在栅极Gate与透明衬底基板101之间形成有漫反射层102,这可以进一步地减少反射光的光强,提升对比度,增强显示效果。
在本实施例中,还优选地,透明衬底基板101上还形成有公共电极1ITO,金属布线包括公共电极线,也即,该阵列基板为ADS阵列基板;在公共电极线与透明衬底基板101之间也形成有漫反射层102,这是因为:公共电极线的线宽较大,对光的反射效果影响较大。
实施例2
本发明实施例提供一种显示装置,包括依次叠置的阵列基板、液晶层、彩膜基板和背光模组,所述阵列基板采用本发明上述实施例提供的阵列基板。
本发明实施例提供的显示装置,由于其采用本发明上述实施例提供的阵列基板,因此,可以解决四周无边框的显示装置反光影响显示效果的问题。
实施例3
本发明实施例提供一种阵列基板的制备方法,包括以下步骤:
提供透明衬底基板。
在透明衬底基板上形成金属布线和薄膜晶体管,且在金属布线和透明衬底基板之间形成有漫反射层。
其中,金属布线包括数据线和栅线;所述在透明衬底上形成金属布线且在金属布线和透明衬底基板之间形成有漫反射层,包括:
在数据线和栅线中的至少一种与透明衬底基板之间形成有漫反射层。
优选地,还包括:
在透明衬底基板上形成薄膜晶体管:
在薄膜晶体管的栅极、源极和漏极中的至少一个与透明衬底基板之间形成有漫反射层。
下面结合图3-图4f详细描述本发明提供的阵列基板的制备方法,具体地,包括以下步骤:
S1,在透明衬底基板101上形成透明电极层ITO,如图4a所示。
S2,在透明电极层ITO上形成光刻胶PR。
S3,采用灰阶掩膜板执行一次构图工艺,使透明电极层ITO形成包括需要形成漫反射层的区域(在此具体为栅极和栅线Gate所在区域)和被光刻胶PR覆盖的用于显示的电极(在此具体为公共电极1ITO)的图形。
具体地,首先,S31,使用灰阶掩膜板进行曝光和显影,使栅极和栅线Gate对应区域的光刻胶的厚度还剩一半,公共电极1ITO对应区域的光刻胶的厚度不变,而其他区域的光刻胶被去除掉,如图4b所示,其中,灰阶掩膜板(GTM Mask)的对应栅极和栅线Gate对应区域设置为半透过区域,对应公共电极对应区域设置为不透过区域,其他区域设置为透过区域。
S32,采用湿法刻蚀工艺去除灰阶掩膜板的透过区域对应的透明电极层ITO,最终的结果如图4c所示。
S33,对光刻胶PR进行一次灰化处理(Ashing),使用的气体可以为O2/SF6,使栅极和栅线Gate对应区域没有光刻胶PR的存在,仅公共电极对应区域上方存在光刻胶PR(且厚度减半),最终的结果如图4d所示。
S4,对需要形成漫反射的区域进行处理,以使其形成漫反射层,最终的结果如图4e。
具体地,对需要形成漫反射的区域(在此处具体为栅极和栅线Gate对应区域)的透明电极层进行等离子体处理,使透明电极层ITO的表面粗糙化形成漫反射层102。
更具体地,采用氢气或NH3进行等离子体处理,以使透明电极层ITO被H部分还原,因而使得透明电极层ITO形貌变得粗糙而形成漫反射层102。
S5,去除位于用于显示的电极(即,公共电极1ITO)上的光刻胶PR,最终的结果如图4f所示,形成公共电极1ITO。具体地,对光刻胶PR进行一次灰化处理(Ashing),使用的气体可以为O2/SF6。
优选地,上述两次灰化处理过程以及等离子体处理形成漫反射层102的过程均采用干法刻蚀工艺完成,也即,通过干刻蚀设备连续进行工艺,从而可以简化工艺过程。
S6,后续依次形成栅极和栅线Gate、栅绝缘层GI、有源区Active、源漏电极SD、钝化层PVX和像素电极2ITO。
最终制备如图2所示的ADS阵列基板。
由上可知,采用本发明的制备方法制备的阵列基板,借助漫反射层102可以在外界环境光照射在金属布线上时发生漫反射,也就减少了反射光的光强,因而可以提升对比度和增强显示效果,从而可以改善无边框显示器件的性能。
并且,本发明可以在不增加构图工艺数量的基础上改善ADS无边框显示器件的反光问题,从而可以提高ADS无边框产品的显示效果。
可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。
Claims (4)
1.一种阵列基板的制备方法,其特征在于,包括以下步骤:
提供透明衬底基板;
在所述透明衬底基板上形成金属布线,且在所述金属布线和所述透明衬底基板之间形成有漫反射层;
所述形成漫反射层,包括:
在透明衬底基板上形成透明电极层;
在所述透明电极层上形成光刻胶层;
采用灰阶掩膜板执行一次构图工艺,使所述透明电极层形成包括需要形成漫反射层的区域和被光刻胶覆盖的用于显示的电极的图形;
对所述需要形成漫反射的区域进行处理,以使其形成所述漫反射层;
去除位于所述用于显示的电极上的光刻胶。
2.根据权利要求1所述的阵列基板的制备方法,其特征在于,所述金属布线包括数据线和栅线;
所述在所述透明衬底基板上形成金属布线,且在所述金属布线和所述透明衬底基板之间形成有漫反射层,包括:
在所述数据线和所述栅线中的至少一种与所述透明衬底基板之间形成有漫反射层。
3.根据权利要求1所述的阵列基板的制备方法,其特征在于,还包括:
在所述透明衬底基板上形成薄膜晶体管:
在所述薄膜晶体管的栅极、源极和漏极中的至少一个与所述透明衬底基板之间形成有漫反射层。
4.根据权利要求1所述的阵列基板的制备方法,其特征在于,对所述需要形成漫反射的区域进行处理,包括:
对所述需要形成漫反射的区域的透明电极层进行等离子体处理,使透明电极层的表面粗糙化形成所述漫反射层。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610930229.4A CN106684095B (zh) | 2016-10-31 | 2016-10-31 | 阵列基板及其制备方法、显示装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610930229.4A CN106684095B (zh) | 2016-10-31 | 2016-10-31 | 阵列基板及其制备方法、显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106684095A CN106684095A (zh) | 2017-05-17 |
CN106684095B true CN106684095B (zh) | 2020-02-14 |
Family
ID=58840303
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610930229.4A Active CN106684095B (zh) | 2016-10-31 | 2016-10-31 | 阵列基板及其制备方法、显示装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106684095B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109407431A (zh) * | 2017-08-17 | 2019-03-01 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、显示面板 |
CN107390444B (zh) * | 2017-09-06 | 2024-03-29 | 京东方科技集团股份有限公司 | 一种阵列基板及其制作方法和显示装置 |
CN109103205B (zh) * | 2018-08-21 | 2020-12-04 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制造方法 |
CN110993622A (zh) * | 2019-12-13 | 2020-04-10 | Tcl华星光电技术有限公司 | 阵列基板及其制备方法、显示面板 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102487128A (zh) * | 2010-12-06 | 2012-06-06 | 三星移动显示器株式会社 | 光散射基底、有机发光显示装置及它们的制造方法 |
CN104952791A (zh) * | 2015-06-26 | 2015-09-30 | 深圳市华星光电技术有限公司 | Amoled显示器件的制作方法及其结构 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6809012B2 (en) * | 2001-01-18 | 2004-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor using laser annealing |
-
2016
- 2016-10-31 CN CN201610930229.4A patent/CN106684095B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102487128A (zh) * | 2010-12-06 | 2012-06-06 | 三星移动显示器株式会社 | 光散射基底、有机发光显示装置及它们的制造方法 |
CN104952791A (zh) * | 2015-06-26 | 2015-09-30 | 深圳市华星光电技术有限公司 | Amoled显示器件的制作方法及其结构 |
Also Published As
Publication number | Publication date |
---|---|
CN106684095A (zh) | 2017-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3217213B1 (en) | Array substrate, liquid crystal display panel and display device | |
US10379413B2 (en) | Array substrate, manufacturing method thereof, and display apparatus | |
CN106684095B (zh) | 阵列基板及其制备方法、显示装置 | |
US9958747B2 (en) | Array substrate and manufacturing method thereof, display panel and display device | |
US10181465B2 (en) | Array substrate, display device and manufacturing method of array substrate | |
US9570473B2 (en) | Array substrate, manufacturing method thereof and display device | |
US9437619B2 (en) | Array substrate, manufacturing method thereof and display device | |
US9709864B2 (en) | Array substrate and its manufacturing method and display device | |
US9711542B2 (en) | Method for fabricating display panel | |
US20170052418A1 (en) | Array substrate, manufacturing method thereof, liquid crystal display panel and display device | |
CN103151359B (zh) | 一种显示装置、阵列基板及其制作方法 | |
CN106024809B (zh) | 一种阵列基板的制作方法、阵列基板及显示装置 | |
CN105137672B (zh) | 阵列基板及其制造方法 | |
US9461078B1 (en) | Array substrate, manufacturing method for the same, display device and electronic product | |
US20160372490A1 (en) | Array substrate and manufacturing method thereof, and display panel | |
CN108511394B (zh) | 阵列基板及其制造方法、显示装置 | |
US9274388B2 (en) | Array substrate having common electrode driving interface pattern with slits, and manufacturing method thereof, and liquid crystal display | |
CN106019751B (zh) | 阵列基板及其制造方法、显示装置 | |
US10698248B2 (en) | Counter substrate, display panel, display device and fabricating method | |
US9905593B2 (en) | Mask plate and method for manufacturing array substrate | |
US9798192B2 (en) | Display substrate and manufacturing method thereof, display panel and display device | |
WO2020093442A1 (zh) | 阵列基板的制作方法及阵列基板 | |
CN105679714A (zh) | 阵列基板及其制作方法 | |
US20190011790A1 (en) | Array substrate, manufacturing method thereof, and display device | |
CN110618568A (zh) | 液晶显示面板及其制作方法与无边框液晶显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |