CN106684010B - Active area square resistance test method based on vertical checkout figure - Google Patents

Active area square resistance test method based on vertical checkout figure Download PDF

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CN106684010B
CN106684010B CN201611240477.2A CN201611240477A CN106684010B CN 106684010 B CN106684010 B CN 106684010B CN 201611240477 A CN201611240477 A CN 201611240477A CN 106684010 B CN106684010 B CN 106684010B
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electrode
resistance value
active area
resistance
resolution chart
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CN106684010A (en
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郑雪峰
李小炜
侯晓慧
王颖哲
王奥琛
王冲
马晓华
郝跃
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Xidian University
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Abstract

The active area square resistance test method based on vertical checkout figure that the invention discloses a kind of.Its scheme is: the Ohmic contact resolution chart of 1. one group of laterally and longitudinally square crossing of preparation, includes first electrode, third electrode in transverse test figure, includes second electrode, the 4th electrode in testing longitudinal figure；If this laterally and longitudinally resolution chart infall be rectangular active area；2. testing the resistance value in transverse test figure between first electrode and third electrode respectively；Resistance value in testing longitudinal figure between second electrode and the 4th electrode；3. the obtained resistance value of testing longitudinal figure is made the difference multiplied by coefficient L/W and the resulting resistance value of transverse test figure, by difference result divided by 1-L/W, the square resistance of active area in resolution chart is obtained, L and W are respectively the length and width in rectangular active area.Resolution chart of the present invention is easy to manufacture, and test speed is fast, as a result accurately and reliably, can be used for the production of high electron mobility heterojunction transistor.

Description

Active area square resistance test method based on vertical checkout figure
Technical field
The invention belongs to microelectronic field, in particular to a kind of test method of active area square resistance can be used for device The performance and reliability assessment of part.
Background technique
GaN material compares the first generation semiconductor material using Si as representative and the second generation semiconductor by representative of GaAs Material has that forbidden bandwidth is big, breakdown electric field is high, high temperature resistant, the advantages such as anticorrosive, becomes the typical case of third generation semiconductor material It represents.The heterostructure transistors especially formed with materials such as AlGaN, there are high concentrations, high electronics at heterojunction boundary The two-dimensional electron gas of mobility, thus have many advantages, such as that operating current is big, operating rate is fast, have in high frequency, high power field Big advantage and broad application prospect.In recent years, related device has become international and domestic research hotspot, and part is Realize commercial applications.
Square resistance is an important parameter for characterizing material and device quality.The method of square resistance is usually measured at present To test semiconductor bulk material square resistance with spreading resistance method, two sonde methods or four probe method combination multimeter.
Railway Project will appear using sonde method: first, if square resistance resistance value itself is smaller and multimeter sheet The performance of body is poor, just will appear reading shakiness and indeterminable result；Second probe needle electrode is easily destroyed tested Semiconductor material surface.Therefore, how the square resistance of accurately measure active area becomes a urgent problem to be solved.
Summary of the invention
It is a kind of based on the active of vertical checkout figure it is an object of the invention in view of the above shortcomings of the prior art, propose Area's square resistance test method to improve the accuracy rate of measurement, and then improves the performance of electron mobility heterojunction transistor.
To achieve the above object, technical solution of the present invention includes the following steps:
(1) active area square resistance resolution chart is prepared:
(1a) deposits metal electrode on semiconductor bulk material；
(1b) prepares the transverse test figure and testing longitudinal figure of one group of square crossing using the method for high annealing, Transverse test figure and testing longitudinal figure infall are a rectangular active area resolution chart, and horizontal and vertical resolution chart includes Two Ohmic electrodes, in which:
Two Ohmic electrodes in transverse test figure are respectively as follows: the first electrode and third electrode that length is a, and first Electrode is L at a distance from rectangular active area15, third electrode and rectangular active offset are from for L53；
Two Ohmic electrodes in testing longitudinal figure are respectively as follows: the second electrode and the 4th electrode that length is a, and second Electrode and rectangular active offset are from for L25, the 4th electrode and rectangular active offset are from for L54；
Rectangular active section length is L, width W, and L ≠ W, L25=L15, L54=L53；
(2) measurement of active area square resistance:
(2a) applies bias voltage between the first electrode and third electrode of transverse test figure, and connects in the loop Ammeter reads the value of ammeter, and the resistance value R between first electrode and third electrode is calculated using I-V relationshipL1:
RL1=V1/I1；
Wherein RL1For the resistance value in transverse test figure between first electrode and third electrode, V1For transverse test figure Added voltage, I in middle first electrode and third electrode1For in transverse test figure by first electrode, third electrode and active The current value in circuit that area is constituted；
(2b) applies bias voltage between the second electrode and the 4th electrode of testing longitudinal figure, and connects in the loop Ammeter reads the value of ammeter, and the resistance value R between second electrode and the 4th electrode is calculated using I-V relationshipL2:
RL2=V2/I2；
Wherein RL2For the resistance value in testing longitudinal figure between second electrode and the 4th electrode, V2For testing longitudinal figure Added voltage, I in middle second electrode and the 4th electrode2For in testing longitudinal figure by second electrode, the 4th electrode and active The current value in circuit that area is constituted；
(2c) is according to two resistance value R measured in (2a) and (2b)L1And RL2, construct the active area of resolution chart Square resistance calculation formula: Rsh=(RL2L/W-RL1)/(1-L/W)。
The invention has the following advantages over the prior art:
1) resolution chart production method is easy
Conventional transmission line model is when making Ohmic contact resolution chart, it is necessary to make multiple ohms by mesa etch and connect Touched electrode, complex process, present invention only requires one group of laterally crossed longitudinally vertical resolution chart is prepared, resolution chart is simple, Test method is quick and convenient.
2) square resistance test value error is small
When active area square resistance is smaller, when being measured using traditional sonde method combination multimeter, due to multimeter sheet The factors such as the performance of body will have reading shakiness and indeterminable situation with multimeter.Using test method of the invention, only Need to directly obtain the worth size of active area square resistance by mathematical computations by the resistance value of test.
Detailed description of the invention
Fig. 1 is implementation flow chart of the invention；
Fig. 2 is the schematic diagram of the section structure of existing resolution chart；
Fig. 3 is the schematic top view of resolution chart in the present invention；
Fig. 4 is existing rectangle transmission line model schematic diagram；
Fig. 5 is the circuit diagram of transverse test resistance value in the present invention；
Fig. 6 is the circuit diagram of testing longitudinal resistance value in the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Following reality Example is applied for illustrating the present invention, but is not intended to limit the scope of the invention.
Referring to Fig.1, it is as follows to carry out the step of active area square resistance test by the present invention:
Step A makes the resolution chart of active area square resistance.
Referring to Fig. 2, this step prepares the test chart of active area square resistance according to the cross-section structure of existing resolution chart Shape, its step are as follows:
The structure of resolution chart 1a) is arranged: it is followed successively by substrate layer, nitride buffer layer and aluminum gallium nitride potential barrier from bottom to top Layer；
1b) metal electrode is successively deposited on aluminum gallium nitride barrier layer body material；
One group of orthogonal transverse test figure and testing longitudinal figure 1c) are prepared using the method for high annealing, Every kind of resolution chart includes two Ohmic electrodes, in which:
It is the first electrode of a, third electrode that two Ohmic electrodes in transverse test figure, which are respectively as follows: length, and first Electrode and rectangular active offset are from for L15, third electrode and rectangular active offset are from for L53；
It is the second electrode of a, the 4th electrode that two Ohmic electrodes in testing longitudinal figure, which are respectively as follows: length, and second Electrode and rectangular active offset are from for L25, the 4th electrode and rectangular active offset are from for L54；
Rectangular active section length is L, width W, and L ≠ W, L25=L15, L53=L54, a > 0, L > 0, W > 0.
Step 2, the resistance value between the first electrode and third electrode of transverse test figure is tested.
Referring to the resistance test schematic diagram of Fig. 5, apply between the first electrode and third electrode of transverse test figure inclined Voltage is set, and series electrical flow table in the loop, read the value of ammeter, first electrode and third is calculated using I-V relationship Resistance value R between electrodeL1:
RL1=V1/I1；
Wherein RL1For the resistance value in transverse test figure between first electrode and third electrode, V1For transverse test figure Added voltage, I in middle first electrode and third electrode1For in transverse test figure by first electrode, third electrode and active The current value in circuit that area is constituted.
Step 3, the resistance value between the second electrode and the 4th electrode of testing longitudinal figure is tested.
Referring to the resistance test schematic diagram of Fig. 6, apply between the second electrode and the 4th electrode of testing longitudinal figure inclined Voltage is set, and series electrical flow table in the loop, read the value of ammeter, second electrode and the 4th is calculated using I-V relationship Resistance value R between electrodeL2:
RL2=V2/I2；
Wherein RL2For the resistance value in testing longitudinal figure between second electrode and the 4th electrode, V2For testing longitudinal figure Added voltage, I in middle second electrode and the 4th electrode2For in testing longitudinal figure by second electrode, the 4th electrode and active The current value in circuit that area is constituted.
Step 4, the square resistance of active area in resolution chart is calculated.
4a) according to Fig. 3, the resistance value in transverse test figure between first electrode and third electrode is indicated are as follows:
RL1=RA1+RA15+RA5+RA53+RA3,
Wherein, RA1For the resistance value of first electrode in transverse test figure, RA15For first electrode in transverse test figure with Resistance value between rectangular active area, RA5For the resistance value below rectangular active area in transverse test figure, RA53For transverse test Resistance value in figure between third electrode and rectangular active area, RA3For the resistance value of third electrode in transverse test figure；
4b) according to Fig. 3, the resistance value in testing longitudinal figure between second electrode and the 4th electrode is indicated are as follows:
RL2=RB2+RB25+RB5+RB54+RB4,
Wherein, RB2For the resistance value of second electrode in testing longitudinal figure, RB25For second electrode in testing longitudinal figure with Resistance value between rectangular active area, RB5For the resistance value below rectangular active area in testing longitudinal figure, RB54For testing longitudinal Resistance value in figure between the 4th electrode and rectangular active area, RB4For the resistance value of the 4th electrode in testing longitudinal figure,
4c) calculate each section resistance value in two kinds of resolution charts of transverse and longitudinal:
4c1) according to the resistance value calculation formula of rectangle transmission line model, transverse test figure each section resistance is calculated:
It include three Ohmic electrodes and two active areas as shown in figure 4, the schematic diagram of existing transmission line model, three Electrode length is d, and width is WC, distance is respectively L between electrode1, L2.Respectively measuring electrode a and electrode b, electrode b with Resistance value between electrode c, when d is much larger than LTWhen, electrode a, electrode b, electrode c resistance value be illustrated as: R= RshcLT/WC, active region resistance value is R between electrode a and electrode b1=RshL1/WC, active area between electrode b and electrode c Partial ohmic value is R2=RshL2/WC, wherein LT 2=ρ/Rshc, LTFor length of transmission line, RshcFor Ohmic contact square resistance, ρ is The resistivity of Ohmic contact,
By the above transmission line model, transverse test figure each section resistance is calculated are as follows:
RA1=RshcLT/ W,
RA15=RshL15/ W,
RA5=RshL/W,
RA53=RshL53/ W,
RA3=RshcLT/W；
4c2) according to the resistance value calculation formula of rectangle transmission line model, testing longitudinal figure each section resistance is calculated are as follows:
RB2=RshcLT/ L,
RB25=RshL25/ L,
RB5=RshW/L,
RB54=RshL54/ L,
RB4=RshcLT/ L,
4d) by the R in step 4c1)A1, RA15, RA5, RA53, RA3Substitute into step 4a) in resistance expression formula, obtain transverse direction Resistance value expression R in resolution chart between first electrode and third electrodeL1:
RL1=RshcLT/W+RshL15/W+RshL/W+RshL53/W+RshcLT/ W,
4e) by the R in step 4c2)B2, RB25, RB5, RB54, RB4Substitute into step 4b) in resistance expression formula, obtain longitudinal direction Resistance value expression R in resolution chart between second electrode and the 4th electrodeL2:
RL2=RshcLT/L+RshL25/L+RshW/L+RshL54/L+RshcLT/ L,
4f) according to the L in step 1c)25=L15, L54=L53, R in step 4e)L12Both sides with after multiplied by coefficient L/W, Again with the R in step 4d)L1Equation is obtained as difference:
RL2L/W-RL1=Rsh-RshL/W,
4g) by the equation of step 4f), export calculates the active area square resistance in resolution chart:
Rsh=(RL2L/W-RL1)/(1-L/W),
4h) by the R in step 2a)L1Measured value and step 2b) in RL2Measured value substitute into step 4g) in calculating R is obtained in formulashValue are as follows:
Rsh=((V2L)/(I2W)-V1/I1)/(1-L/W)。
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, it is clear that for this field Professional for, after understanding the contents of the present invention and principle, can modify within the spirit and principles in the present invention, Equivalent replacement and improvement etc., for example, resolution chart of the present invention can also be different using GaAs etc. based on GaN material Semiconductor material prepares the resolution chart in present aspect.Made modifications, equivalent substitutions and improvements should be included in the present invention Protection scope within.

Claims (2)

1. the active area square resistance test method based on vertical checkout figure, includes the following steps:
(1) active area square resistance resolution chart is prepared:
(1a) deposits metal electrode on semiconductor bulk material；
(1b) prepares the transverse test figure and testing longitudinal figure of one group of square crossing using the method for high annealing, laterally Resolution chart and testing longitudinal figure infall are a rectangular active area resolution chart, and horizontal and vertical resolution chart includes two Ohmic electrode, in which:
Two Ohmic electrodes in transverse test figure are respectively as follows: the first electrode and third electrode that length is a, first electrode With at a distance from rectangular active area be L15, third electrode and rectangular active offset are from for L53；
Two Ohmic electrodes in testing longitudinal figure are respectively as follows: the second electrode and the 4th electrode that length is a, second electrode With rectangular active offset from for L25, the 4th electrode and rectangular active offset are from for L54；
Rectangular active section length is L, width W, and L ≠ W, L25=L15, L54=L53；
(2) measurement of active area square resistance:
(2a) applies bias voltage between the first electrode and third electrode of transverse test figure, and series current in the loop Table reads the value of ammeter, and the resistance value R between first electrode and third electrode is calculated using I-V relationshipL1:
RL1=V1/I1；
Wherein RL1For the resistance value in transverse test figure between first electrode and third electrode, V1It is in transverse test figure Added voltage, I on one electrode and third electrode1For in transverse test figure by first electrode, third electrode and active area institute Current value in the circuit of composition；
(2b) applies bias voltage between the second electrode and the 4th electrode of testing longitudinal figure, and series current in the loop Table reads the value of ammeter, and the resistance value R between second electrode and the 4th electrode is calculated using I-V relationshipL2:
RL2=V2/I2；
Wherein RL2For the resistance value in testing longitudinal figure between second electrode and the 4th electrode, V2It is in testing longitudinal figure Added voltage, I on two electrodes and the 4th electrode2For in testing longitudinal figure by second electrode, the 4th electrode and active area institute Current value in the circuit of composition；
(2c) is according to two resistance value R measured in (2a) and (2b)L1And RL2, construct the square electricity of the active area of resolution chart Hinder calculation formula: Rsh=(RL2L/W-RL1)/(1-L/W)。
2. according to the method described in claim 1, wherein the square resistance of building resolution chart active area calculates in step (2c) Formula carries out as follows:
(2c1) indicates the resistance value in transverse test figure between first electrode and third electrode are as follows:
RL1=RA1+RA15+RA5+RA53+RA3,
Wherein, RA1For the resistance value of first electrode in transverse test figure, RA15For first electrode and rectangle in transverse test figure Resistance value between active area, RA5For the resistance value in rectangular active area in transverse test figure, RA53It is in transverse test figure Resistance value between three electrodes and rectangular active area, RA3For the resistance value of third electrode in transverse test figure；
(2c2) indicates the resistance value in testing longitudinal figure between second electrode and the 4th electrode are as follows:
RL2=RB2+RB25+RB5+RB54+RB4,
Wherein, RB2For the resistance value of second electrode in testing longitudinal figure, RB25For second electrode and rectangle in testing longitudinal figure Resistance value between active area, RB5For the resistance value in rectangular active area in testing longitudinal figure, RB54It is in testing longitudinal figure Resistance value between four electrodes and rectangular active area, RB4For the resistance value of the 4th electrode in testing longitudinal figure,
(2c3) set first electrode, second electrode, third electrode, the 4th electrode length be a, length of transmission line be LT, and a Much larger than LT, according to the resistance value calculation formula of existing rectangle transmission line model, in transverse test figure: obtaining each section Resistance value are as follows:
RA1=RshcLT/ W, RA15=RshL15/ W, RA5=RshL/W, RA53=RshL53/ W, RA3=RshcLT/W；
Wherein, LTFor length of transmission line；
(2c4) obtains each section in testing longitudinal figure according to the resistance value calculation formula of existing rectangle transmission line model Resistance value are as follows:
RB2=RshcLT/ L, RB25=RshL25/ L, RB5=RshW/L, RB54=RshL54/ L, RB4=RshcLT/L；
Wherein RshFor active area square resistance, RshcFor ohmic contact regions square resistance；
(2c5) is by the R in step (2c3)A1, RA15, RA5, RA53, RA3The resistance expression formula in step (2c1) is substituted into, transverse direction is obtained Resistance value expression R in resolution chart between first electrode and third electrodeL1:
RL1=RshcLT/W+RshL15/W+RshL/W+RshL53/W+RshcLT/ W,
(2c6) is by the R in step (2c4)B2, RB25, RB5, RB54, RB4The resistance expression formula in step (2c2) is substituted into, longitudinal direction is obtained Resistance value expression R in resolution chart between second electrode and the 4th electrodeL2:
RL2=RshcLT/L+RshL25/L+RshW/L+RshL54/L+RshcLT/ L,
(2c7) is according to L in step (1)25=L15, L54=L53Relationship, the R in step (2c6)L12Both sides are the same as multiplied by coefficient L/ After W, then with the R in step (2c5)L1It is poor to make, and obtains equation:
RL2L/W-RL1=Rsh-RshL/W；
(2c8) exports the formula for calculating the active area square resistance in resolution chart by the equation of step (2c7) are as follows:
Rsh=(RL2L/W-RL1)/(1-L/W)。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068340A (en) * 1998-08-24 2000-03-03 Mitsubishi Electric Corp Test pattern
KR20100013938A (en) * 2008-08-01 2010-02-10 주식회사 하이닉스반도체 A test pattern of a semiconductor device and a method for testing the same
CN102200552A (en) * 2010-11-17 2011-09-28 浙江正泰太阳能科技有限公司 Method and equipment for testing square resistor of silicon sheet
CN103137603A (en) * 2011-11-23 2013-06-05 上海华虹Nec电子有限公司 Test structure and method for monitoring light dope injection stability under side walls of polycrystalline silicon

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7719005B2 (en) * 2007-02-07 2010-05-18 International Buriness Machines Corporation Structure and method for monitoring and characterizing pattern density dependence on thermal absorption in a semiconductor manufacturing process
JP5321805B2 (en) * 2008-02-14 2013-10-23 セイコーエプソン株式会社 Method for manufacturing actuator device, method for manufacturing liquid jet head, liquid jet head, and liquid jet device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000068340A (en) * 1998-08-24 2000-03-03 Mitsubishi Electric Corp Test pattern
KR20100013938A (en) * 2008-08-01 2010-02-10 주식회사 하이닉스반도체 A test pattern of a semiconductor device and a method for testing the same
CN102200552A (en) * 2010-11-17 2011-09-28 浙江正泰太阳能科技有限公司 Method and equipment for testing square resistor of silicon sheet
CN103137603A (en) * 2011-11-23 2013-06-05 上海华虹Nec电子有限公司 Test structure and method for monitoring light dope injection stability under side walls of polycrystalline silicon

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