CN110400761A - A kind of AlGaN/GaN HEMT boundary defect detection method - Google Patents
A kind of AlGaN/GaN HEMT boundary defect detection method Download PDFInfo
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- CN110400761A CN110400761A CN201910587041.8A CN201910587041A CN110400761A CN 110400761 A CN110400761 A CN 110400761A CN 201910587041 A CN201910587041 A CN 201910587041A CN 110400761 A CN110400761 A CN 110400761A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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Abstract
The invention discloses a kind of AlGaN/GaN HEMT boundary defect detection methods.The round Schottky diode structure that this method is prepared first convenient for testing capacitor characteristic, by measuring the capacitance-frequency characteristic curve under strong accumulation area difference bias；Then bulk resistance is calculated according to Schottky diode forward current, leakage current equivalent resistance is calculated according to Schottky diode reverse current, barrier layer capacitance value is obtained according to capacitance-voltage curve, the boundary defect equivalent capacitance value under different biass is determined using equivalent impedance models fitting, it finally calculates and acquires interface defect density with the variation of bias, realize the detection to AlGaN/GaN HEMT boundary defect.The present invention realizes the detection to AlGaN/GaN HEMT interface defect density by the method for being fitted capacitance characteristic, helps to extend application of the CV analytic approach in GaN base HEMT device.
Description
Technical field
The present invention relates to GaN base HEMT reliability analysis technology field more particularly to a kind of interfaces AlGaN/GaN HEMT
Defect inspection method.
Background technique
Compared with traditional low-gap semiconductor, broad stopband GaN semiconductor have high breakdown electric field, high electron saturation velocities and
The superior physical characteristic such as high thermal stability.It, can be heterogeneous especially in the presence of the AlGaN/GaN hetero-junctions of stronger polarity effect
Interface induces the two-dimensional electron gas of high concentration, is the nuclear structure of HEMT.In order to obtain better performance, in AlGaN material
Al component be continuously increased, but due between the AlGaN and GaN material of high Al contents lattice mismatch rate it is very big, lattice mismatch produce
Raw stress can make lattice generate strain by inverse piezoelectric effect, induce a large amount of boundary defects.It is close to characterize device median surface defect
Degree method is most important for studying and being promoted AlGaN/GaN HEMT performance.By prolonged research and development, base at present
It is mainly used in Si base MOS device in the method for parallel conductance method characterization interface defect density, but this method itself usually has
Compare the stringent scope of application and condition, for example requires device that there is very low leakage current.Since AlGaN/GaN HEMT is one
Kind has the device of higher leakage, if simply set is close to characterize the boundary defect of AlGaN/GaN HEMT in aforementioned manners
Degree, it is clear that acquisition the result is that inaccuracy.In addition to this, Si material and GaN material itself are in the effective density of states of conduction band, forbidden band
There are biggish differences for width and interface defect density etc., so being obtained using the reliability value that parallel conductance method obtains result
Suspect.
Summary of the invention
The purpose of the present invention is to the shortcomings of the prior art, provide a kind of AlGaN/GaN HEMT boundary defect
Density Detection method.This method test result is accurate, does not damage to device, and the performance for promoting AlGaN/GaN HEMT has
There is important meaning.
The present invention is achieved through the following technical solutions: being convenient for the round Schottky diode of testing capacitor characteristic by preparing
Structure, by measuring the capacitance-frequency characteristic curve under strong accumulation area difference bias；Then according to the positive electricity of Schottky diode
Stream calculation bulk resistance calculates leakage current equivalent resistance according to Schottky diode reverse current, according to capacitance-voltage curve
Barrier layer capacitance value is obtained, the boundary defect equivalent capacitance value under different biass is determined using equivalent impedance models fitting, finally
Calculating acquires interface defect density with the variation of bias, realizes the detection to AlGaN/GaN HEMT boundary defect.
In above scheme, this method specifically includes the following steps:
Step 1 makes round Schottky diode structure in AlGaN/GaN heterogenous junction epitaxy on piece；
Step 2 tests the Schottky diode structure of preparation, obtains the electricity under strong accumulation area difference bias respectively
Appearance-frequency characteristic；
Step 3 calculates bulk resistance according to Schottky diode forward current-voltage characteristic, and Schottky diode is reversed
I-E characteristic calculates leakage current equivalent resistance, obtains barrier layer capacitance value according to capacitance-voltage curve；
Step 4, according to equivalent impedance models fitting capacitance-frequency characteristic curve, obtain the boundary defect under different biass
Equivalent capacitance value；
Step 5, by boundary defect equivalent capacity average value, calculate the interface defect density value acquired under different biass, it is real
Now to the detection of AlGaN/GaN HEMT boundary defect.
In above scheme, step 1 includes making round Schottky diode structure, and schottky metal uses Ni/Au, Europe
Nurse metal uses Ti/Al/Ni/Au, and it is 20 μm with Ohmic contact distance that the diameter of round Schottky electrode, which is 100 μm,.
In above scheme, the frequency of the strong accumulation area capacitance-frequency characteristic in step 2, which changes, increases to 5MHz by 5kHz,
Test voltage is respectively 0V, -0.5V and -1V.
In above scheme, the test frequency of capacitance-voltage curve is 1MHz in step 3, obtains the electricity of barrier layer capacitance value
Pressure is 0V.
In above scheme, step 4 middle impedance equivalent model is five yuan of impedances comprising bulk resistor, leakage current and boundary defect
Model.
Compared with prior art, the invention has the following advantages that this AlGaN/GaN HEMT circle provided by the invention
Planar defect detection method, it is contemplated that, can there are the influence of larger leakage current and higher defect concentration in AlGaN/GaN HEMT
Accurate detection AlGaN/GaN heterojunction boundary defect concentration, for improving the performance and its reliable operation of AlGaN/GaN HEMT
Property has great importance.
Detailed description of the invention
Fig. 1 is the flow chart for detecting boundary defect；
Fig. 2 is the electrode pattern of the round Schottky diode structure prepared；
Fig. 3 is room temperature AlGaN/GaN Schottky diode forward current-voltage curve；
Fig. 4 is AlGaN/GaN Schottky diode capacitance-voltage curve；
Fig. 5 is the equivalent interface capacitor for the different biass that fitting obtains.
Specific embodiment
Further description of the technical solution of the present invention with reference to the accompanying drawings and examples.
To make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with specific embodiment, and reference
Attached drawing, the present invention is described in more detail.
Embodiment: Al in test Sapphire Substrate0.27Ga0.83N/GaN HEMT interface defect density.
The flow chart of boundary defect is detected according to Fig. 1, specific implementation step is as follows:
Step 1: in Al0.27Ga0.83N/GaN heterogenous junction epitaxy on piece makes round Schottky diode structure, according to routine
GaN device technical process, the preparation of round Schottky electrode and Ohmic contact is carried out to device.Schottky metal electrode
It (Ni/Au) is using standard lithographic and lift-off technical definition, Ohmic contact (Ti/Al/Ni/Au) is in 870 DEG C of nitrogen atmosphere
Middle annealing is enclosed to obtain within 30 seconds.The diameter of round Schottky electrode is 100 μm, with Ohmic contact at a distance of 20 μm, such as Fig. 2 institute
Show.
Step 2: using Semiconductor Parameter Analyzer, the round Schottky diode structure of preparation is tested, probe
One end be placed in circular schottky metal, another probe is placed on surrounding ohmic metal and measures, respectively
Obtain the capacitance-frequency characteristic curve under strong accumulation area difference bias.Curve frequencies variation is gradually increased to 5MHz by 5kHz, surveys
Examination voltage is respectively 0V, -0.5V and -1V, as shown in Figure 5.
Step 3: according to Schottky diode forward current-voltage characteristic, the electric current after being opened by fitting calculates body electricity
Resistance value, as shown in figure 3, it is about 28 Ω that fitting, which obtains bulk resistor,；It is calculated and is leaked according to Schottky diode reverse current-voltage characteristic
Current equivalence resistance value, about 250 Ω；According to the capacitance-voltage curve under 1MHz obtain barrier layer capacitance value be about 1.2 ×
10-10F, as shown in Figure 4；
Step 4: according to the parameter of said extracted, capacitance-frequency characteristic curve is fitted using five meta-model of equivalent impedance, point
Not Huo get bias be 0V, -0.5V and -1V when device interfaces defect equivalent capacitance value, as shown in Figure 5；By to above three
Equivalent capacity is averaged, and obtaining boundary defect equivalent capacity is about 6.7 × 10-6F。
Step 5: according to boundary defect and boundary defect equivalent capacity relationship D=C/q, calculating and obtain above-mentioned boundary defect etc.
Imitate interface defect density, about 4.19 × 10 corresponding to condenser paper mean value9cm-2eV-1。
The present invention is mentioned by preparation circle AlGaN/GaN Schottky diode structure according to device current and capacitance characteristic
Parameter is taken, using the capacitance-frequency curve under fitting accumulation area difference bias, is realized to AlGaN/GaN HEMT boundary defect
The detection of density.For AlGaN/GaN HEMT, integrity problem seriously limits its large-scale commercial applications, and this method has
Help improve the reliability of AlGaN/GaN HEMT device work.Compared with the prior art, the invention has the following beneficial effects:
Fully consider that AlGaN/GaN HEMT has the characteristic of big leakage current and high defect concentration, test result is more acurrate.
Finally, it is stated that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting, although referring to compared with
Good embodiment describes the invention in detail, those skilled in the art should understand that, it can be to skill of the invention
Art scheme is modified or replaced equivalently, and without departing from the objective and range of technical solution of the present invention, should all be covered at this
In the scope of the claims of invention.
Claims (5)
1. a kind of AlGaN/GaN HEMT boundary defect detection method, it is characterised in that: this method is prepared first convenient for test electricity
The round Schottky diode structure for holding characteristic, by measuring the capacitance-frequency characteristic curve under strong accumulation area difference bias；So
Bulk resistance is calculated according to Schottky diode forward current afterwards, it is equivalent to calculate leakage current according to Schottky diode reverse current
Resistance value is obtained barrier layer capacitance value according to capacitance-voltage curve, is determined under different biass using equivalent impedance models fitting
Boundary defect equivalent capacitance value finally calculates and acquires interface defect density with the variation of bias, realizes to AlGaN/GaN HEMT
The detection of boundary defect, this method specifically includes the following steps:
Step 1 makes round Schottky diode structure in AlGaN/GaN heterogenous junction epitaxy on piece；
Step 2 tests the Schottky diode structure of preparation, obtains the capacitor-under strong accumulation area difference bias respectively
Frequency characteristic；
Step 3 calculates bulk resistance, Schottky diode reverse current-according to Schottky diode forward current-voltage characteristic
Voltage characteristic calculates leakage current equivalent resistance, obtains barrier layer capacitance value according to capacitance-voltage curve；
Step 4, according to equivalent impedance models fitting capacitance-frequency characteristic curve, the boundary defect obtained under different biass is equivalent
Capacitance；
Step 5, by boundary defect equivalent capacity average value, calculate the interface defect density value acquired under different biass, realize pair
The detection of AlGaN/GaN HEMT boundary defect.
2. AlGaN/GaN HEMT boundary defect detection method according to claim 1, which is characterized in that the step 1
The round Schottky diode structure of production, schottky metal use Ni/Au, and ohmic metal uses Ti/Al/Ni/Au, circle
The diameter of shape Schottky electrode is 100 μm, is 20 μm with Ohmic contact distance.
3. AlGaN/GaN HEMT boundary defect detection method according to claim 1, which is characterized in that the step 2
In the frequency of strong accumulation area capacitance-frequency characteristic change 5kHz increased to by 500KHz, test voltage is respectively 0V, -0.5V
With -1V.
4. AlGaN/GaN HEMT boundary defect detection method according to claim 1, which is characterized in that the step 3
The test frequency of middle capacitance-voltage curve is 1MHz, and the voltage for obtaining barrier layer capacitance value is 0V.
5. AlGaN/GaN HEMT boundary defect detection method according to claim 1, which is characterized in that the step 4
Middle impedance equivalent model is five yuan of impedance models comprising bulk resistor, leakage current and boundary defect.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112560381A (en) * | 2020-12-14 | 2021-03-26 | 厦门市三安集成电路有限公司 | Gallium nitride-based high electron mobility transistor simulation method and device and storage medium |
| CN112955760A (en) * | 2020-04-02 | 2021-06-11 | 北京大学深圳研究生院 | Interface state analysis method and device of MIS-HEMT device |
| CN113203930A (en) * | 2021-04-23 | 2021-08-03 | 深圳市时代速信科技有限公司 | Schottky junction reliability assessment method and device |
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| CN107833840A (en) * | 2017-10-27 | 2018-03-23 | 西安电子科技大学 | The method for testing junction temperature of AlGaN/GaN HEMTs |
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| CN107833840A (en) * | 2017-10-27 | 2018-03-23 | 西安电子科技大学 | The method for testing junction temperature of AlGaN/GaN HEMTs |
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| 任舰: "《氮化镓基高电子迁移率晶体管电学可靠性研究》", 31 January 2017 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112955760A (en) * | 2020-04-02 | 2021-06-11 | 北京大学深圳研究生院 | Interface state analysis method and device of MIS-HEMT device |
| CN112955760B (en) * | 2020-04-02 | 2022-05-31 | 北京大学深圳研究生院 | Interface state analysis method and device of MIS-HEMT device |
| CN112560381A (en) * | 2020-12-14 | 2021-03-26 | 厦门市三安集成电路有限公司 | Gallium nitride-based high electron mobility transistor simulation method and device and storage medium |
| CN113203930A (en) * | 2021-04-23 | 2021-08-03 | 深圳市时代速信科技有限公司 | Schottky junction reliability assessment method and device |
| CN113203930B (en) * | 2021-04-23 | 2022-11-11 | 深圳市时代速信科技有限公司 | Schottky junction reliability assessment method and device |
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