CN106684010A - Method for testing square resistance in active area based on vertical test pattern - Google Patents

Method for testing square resistance in active area based on vertical test pattern Download PDF

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CN106684010A
CN106684010A CN201611240477.2A CN201611240477A CN106684010A CN 106684010 A CN106684010 A CN 106684010A CN 201611240477 A CN201611240477 A CN 201611240477A CN 106684010 A CN106684010 A CN 106684010A
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electrode
resistance value
active area
resistance
transverse test
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CN106684010B (en
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郑雪峰
李小炜
侯晓慧
王颖哲
王奥琛
王冲
马晓华
郝跃
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Xidian University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps

Abstract

The invention discloses a method for testing the square resistance in an active area based on a vertical test pattern. The scheme comprises the following steps of: (1), preparing a set of horizontally and longitudinally vertical cross ohmic contact test patterns, wherein a horizontal test pattern includes a first electrode and a third electrode; a longitudinal test pattern includes a second electrode and a fourth electrode; and setting that the cross area of the horizontal test pattern and the longitudinal test pattern is a rectangular active area; (2), respectively testing the resistance value between the first electrode and the third electrode in the horizontal test pattern, and the resistance value between the second electrode and the fourth electrode in the longitudinal test pattern; and (3), multiplying the obtained resistance value of the longitudinal test pattern by a coefficient L/W, then, subtracting the obtained resistance value of the horizontal test pattern, and dividing a difference value result by 1-L/W, so that the square resistance in the active area in the test pattern can be obtained, wherein L and W are the length and the width of the rectangular active area respectively. The method disclosed by the invention is easy to manufacture the test pattern, rapid in test speed and accurate and reliable in result, and can be used for manufacturing a hetero-junction transistor having high electronic mobility.

Description

Active area square resistance method of testing based on vertical checkout figure
Technical field
The invention belongs to microelectronic, more particularly to a kind of method of testing of active area square resistance, can be used for device The performance and reliability assessment of part.
Background technology
GaN material compares the first generation semi-conducting material with Si as representative and the second filial generation quasiconductor with GaAs representative Material has that energy gap is big, breakdown electric field is high, high temperature resistant, the advantage such as anticorrosive, becomes the typical case of third generation semi-conducting material Represent., there is high concentration, high electronics at heterojunction boundary in the heterostructure transistors for particularly being formed with the material such as AlGaN The two-dimensional electron gas of mobility, thus have the advantages that operating current is big, operating rate is fast, have in high frequency, high power field Big advantage and it is widely applied prospect.In recent years, related device has become international and domestic study hotspot, and part is Realize commercial applications.
Square resistance is an important parameter for characterizing material and device quality.The method for generally measuring square resistance at present It is to combine circuit tester with spreading resistance method, two sonde methods or four probe method to test semiconductor bulk material square resistance.
Railway Project is occurred using sonde method：First, if square resistance resistance itself is smaller and circuit tester sheet The poor performance of body, just occurs the unstable and indeterminable result of reading；Second probe needle electrode is easily destroyed and is test for Semiconductor material surface.Therefore, how accurately to measure the square resistance of active area becomes a problem demanding prompt solution.
The content of the invention
Present invention aims to above-mentioned the deficiencies in the prior art, propose a kind of based on the active of vertical checkout figure Area's square resistance method of testing, to improve the accuracy rate of measurement, and then improves the performance of electron mobility heterojunction transistor.
For achieving the above object, technical scheme comprises the steps：
(1) active area square resistance resolution chart is prepared：
(1a) metal electrode is deposited on semiconductor bulk material；
(1b) the transverse test figure and testing longitudinal figure of one group of square crossing are prepared using the method for high annealing, Transverse test figure is a rectangular active area resolution chart with testing longitudinal figure infall, and horizontal and vertical resolution chart includes Two Ohmic electrodes, wherein：
Two Ohmic electrodes in transverse test figure are respectively：Length is the first electrode of a and the 3rd electrode, and first Electrode is L with the distance in rectangular active area15, the 3rd electrode and rectangular active offset are from for L53；
Two Ohmic electrodes in testing longitudinal figure are respectively：Length is the second electrode of a and the 4th electrode, and second Electrode and rectangular active offset are from for L25, the 4th electrode and rectangular active offset are from for L54；
Rectangular active section length is L, and width is W, and L ≠ W, L25=L15, L54=L53；
(2) measurement of active area square resistance：
(2a) apply bias voltage between the first electrode and the 3rd electrode of transverse test figure, and connect in the loop Ammeter, reads the value of ammeter, and using I-V relations resistance value R between first electrode and the 3rd electrode is calculatedL1：
RL1=V1/I1；
Wherein RL1For the resistance value in transverse test figure between first electrode and the 3rd electrode, V1For transverse test figure Middle first electrode and voltage added on the 3rd electrode, I1For in transverse test figure by first electrode, the 3rd electrode and active Current value in the loop that area is constituted；
(2b) apply bias voltage between the second electrode and the 4th electrode of testing longitudinal figure, and connect in the loop Ammeter, reads the value of ammeter, and using I-V relations resistance value R between second electrode and the 4th electrode is calculatedL2：
RL2=V2/I2；
Wherein RL2For the resistance value in testing longitudinal figure between second electrode and the 4th electrode, V2For testing longitudinal figure Middle second electrode and voltage added on the 4th electrode, I2For in testing longitudinal figure by second electrode, the 4th electrode and active Current value in the loop that area is constituted；
(2c) according to two resistance values R measured in (2a) and (2b)L1And RL2, build the active area of resolution chart Square resistance computing formula：Rsh=(RL2L/W-RL1)/(1-L/W)。
The present invention has the advantage that compared with prior art：
1) resolution chart manufacture method is easy
Conventional transmission line model is when Ohmic contact resolution chart is made, it is necessary to makes multiple ohms by mesa etch and connects Touched electrode, complex process, present invention only requires preparing one group of horizontal crossed longitudinally vertical resolution chart, resolution chart is simple, Method of testing is quick and convenient.
2) square resistance test value error is little
When active area square resistance is less, when being measured with reference to circuit tester using traditional sonde method, due to circuit tester sheet , will there is the unstable and indeterminable situation of reading with circuit tester in the factors such as the performance of body.Using the method for testing of the present invention, Need the worth size that can directly obtain active area square resistance by mathematical calculation by the resistance value of test.
Description of the drawings
Fig. 1 is the flowchart of the present invention；
Fig. 2 is the cross-sectional view of existing resolution chart；
Fig. 3 is the schematic top view of resolution chart in the present invention；
Fig. 4 is existing rectangle transmission line model schematic diagram；
Fig. 5 is the circuit theory diagrams of transverse test resistance value in the present invention；
Fig. 6 is the circuit theory diagrams of testing longitudinal resistance value in the present invention.
Specific embodiment
With reference to the accompanying drawings and examples, the specific embodiment of the present invention is described in further detail.Following reality Example is applied for illustrating the present invention, but is not limited to the scope of the present invention.
With reference to Fig. 1, the present invention carries out as follows the step of active area square resistance is tested：
Step A, makes the resolution chart of active area square resistance.
With reference to Fig. 2, this step prepares the test chart of active area square resistance according to the cross-section structure of existing resolution chart Shape, its step is as follows：
The structure of resolution chart 1a) is set：It is followed successively by from bottom to top substrate layer, nitride buffer layer and aluminum gallium nitride potential barrier Layer；
1b) metal electrode is deposited successively on aluminum gallium nitride barrier layer body material；
1c) one group of orthogonal transverse test figure and testing longitudinal figure are prepared using the method for high annealing, Every kind of resolution chart includes two Ohmic electrodes, wherein：
Two Ohmic electrodes in transverse test figure are respectively：Length is the first electrode of a, the 3rd electrode, and first Electrode and rectangular active offset are from for L15, the 3rd electrode and rectangular active offset are from for L53；
Two Ohmic electrodes in testing longitudinal figure are respectively：Length is the second electrode of a, the 4th electrode, and second Electrode and rectangular active offset are from for L25, the 4th electrode and rectangular active offset are from for L54；
Rectangular active section length is L, and width is W, and L ≠ W, L25=L15, L53=L54, a ＞ 0, L ＞ 0, W ＞ 0.
Step 2, the resistance value tested between the first electrode and the 3rd electrode of transverse test figure.
With reference to the resistance test schematic diagram of Fig. 5, apply inclined between the first electrode and the 3rd electrode of transverse test figure Voltage, and series electrical flow table in the loop are put, the value of ammeter is read, using I-V relations first electrode and the 3rd is calculated Resistance value R between electrodeL1：
RL1=V1/I1；
Wherein RL1For the resistance value in transverse test figure between first electrode and the 3rd electrode, V1For transverse test figure Middle first electrode and voltage added on the 3rd electrode, I1For in transverse test figure by first electrode, the 3rd electrode and active Current value in the loop that area is constituted.
Step 3, the resistance value tested between the second electrode and the 4th electrode of testing longitudinal figure.
With reference to the resistance test schematic diagram of Fig. 6, apply inclined between the second electrode and the 4th electrode of testing longitudinal figure Voltage, and series electrical flow table in the loop are put, the value of ammeter is read, using I-V relations second electrode and the 4th is calculated Resistance value R between electrodeL2：
RL2=V2/I2；
Wherein RL2For the resistance value in testing longitudinal figure between second electrode and the 4th electrode, V2For testing longitudinal figure Middle second electrode and voltage added on the 4th electrode, I2For in testing longitudinal figure by second electrode, the 4th electrode and active Current value in the loop that area is constituted.
Step 4, calculates the square resistance of active area in resolution chart.
4a) according to Fig. 3, the resistance value in transverse test figure between first electrode and the 3rd electrode is expressed as：
RL1=RA1+RA15+RA5+RA53+RA3,
Wherein, RA1For the resistance value of first electrode in transverse test figure, RA15For first electrode in transverse test figure with Resistance value between rectangular active area, RA5For the resistance value below rectangular active area in transverse test figure, RA53For transverse test Resistance value in figure between the 3rd electrode and rectangular active area, RA3For the resistance value of the 3rd electrode in transverse test figure；
4b) according to Fig. 3, the resistance value in testing longitudinal figure between second electrode and the 4th electrode is expressed as：
RL2=RB2+RB25+RB5+RB54+RB4,
Wherein, RB2For the resistance value of second electrode in testing longitudinal figure, RB25For second electrode in testing longitudinal figure with Resistance value between rectangular active area, RB5For the resistance value below rectangular active area in testing longitudinal figure, RB54For testing longitudinal Resistance value in figure between the 4th electrode and rectangular active area, RB4For the resistance value of the 4th electrode in testing longitudinal figure,
4c) calculate each several part resistance value in two kinds of resolution charts of transverse and longitudinal：
4c1) according to the resistance value computing formula of rectangle transmission line model, transverse test figure each several part resistance is calculated：
As shown in figure 4, the schematic diagram of existing transmission line model, comprising three Ohmic electrodes and two active areas, three Electrode length is d, and width is WC, distance is respectively L between electrode1, L2.Respectively measuring electrode a and electrode b, electrode b with Resistance value between electrode c, when d is much larger than LTWhen, electrode a, electrode b, the resistance value of electrode c are illustrated as：R= RshcLT/WC, active region resistance value is R between electrode a and electrode b1=RshL1/WC, active area between electrode b and electrode c Partial ohmic value is R2=RshL2/WC, wherein LT 2=ρ/Rshc, LTFor length of transmission line, RshcFor Ohmic contact square resistance, ρ is The resistivity of Ohmic contact,
By above transmission line model, calculating transverse test figure each several part resistance is：
RA1=RshcLT/ W,
RA15=RshL15/ W,
RA5=RshL/W,
RA53=RshL53/ W,
RA3=RshcLT/W；
4c2) according to the resistance value computing formula of rectangle transmission line model, calculating testing longitudinal figure each several part resistance is：
RB2=RshcLT/ L,
RB25=RshL25/ L,
RB5=RshW/L,
RB54=RshL54/ L,
RB4=RshcLT/ L,
4d) by step 4c1) in RA1, RA15, RA5, RA53, RA3Substitute into step 4a) in resistance expression formula, obtain laterally Resistance value expression R in resolution chart between first electrode and the 3rd electrodeL1：
RL1=RshcLT/W+RshL15/W+RshL/W+RshL53/W+RshcLT/ W,
4e) by step 4c2) in RB2, RB25, RB5, RB54, RB4Substitute into step 4b) in resistance expression formula, obtain longitudinal direction Resistance value expression R in resolution chart between second electrode and the 4th electrodeL2：
RL2=RshcLT/L+RshL25/L+RshW/L+RshL54/L+RshcLT/ L,
4f) according to step 1c) in L25=L15, L54=L53, in step 4e) in RL12Both sides are same to be multiplied by after coefficient L/W, Again with step 4d) in RL1Make difference and obtain equation：
RL2L/W-RL1=Rsh-RshL/W,
4g) by step 4f) equation, derive calculate resolution chart in active area square resistance：
Rsh=(RL2L/W-RL1)/(1-L/W),
4h) by step 2a) in RL1Measured value and step 2b) in RL2Measured value substitute into step 4g) in calculating R is obtained in formulashValue be：
Rsh=((V2L)/(I2W)-V1/I1)/(1-L/W)。
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, it is clear that for this area Professional for, after present disclosure and principle is understood, can modify within the spirit and principles in the present invention, Equivalent and improvement etc., for example, resolution chart of the present invention can also be different using GaAs etc. based on GaN material Semi-conducting material to prepare present aspect in resolution chart.Modification, equivalent and the improvement made should be included in the present invention Protection domain within.

Claims (2)

1. the active area square resistance method of testing based on vertical checkout figure, comprises the steps：
(1) active area square resistance resolution chart is prepared：
(1a) metal electrode is deposited on semiconductor bulk material；
(1b) the transverse test figure and testing longitudinal figure of one group of square crossing are prepared using the method for high annealing, laterally Resolution chart is a rectangular active area resolution chart with testing longitudinal figure infall, and horizontal and vertical resolution chart includes two Ohmic electrode, wherein：
Two Ohmic electrodes in transverse test figure are respectively：Length is the first electrode of a and the 3rd electrode, first electrode It is L with the distance in rectangular active area15, the 3rd electrode and rectangular active offset are from for L53；
Two Ohmic electrodes in testing longitudinal figure are respectively：Length is the second electrode of a and the 4th electrode, second electrode With rectangular active offset from for L25, the 4th electrode and rectangular active offset are from for L54；
Rectangular active section length is L, and width is W, and L ≠ W, L25=L15, L54=L53；
(2) measurement of active area square resistance：
(2a) bias voltage, and series current in the loop are applied between the first electrode and the 3rd electrode of transverse test figure Table, reads the value of ammeter, and using I-V relations resistance value R between first electrode and the 3rd electrode is calculatedL1：
RL1=V1/I1；
Wherein RL1For the resistance value in transverse test figure between first electrode and the 3rd electrode, V1For in transverse test figure Added voltage, I on one electrode and the 3rd electrode1For in transverse test figure by first electrode, the 3rd electrode and active area institute Current value in the loop of composition；
(2b) bias voltage, and series current in the loop are applied between the second electrode and the 4th electrode of testing longitudinal figure Table, reads the value of ammeter, and using I-V relations resistance value R between second electrode and the 4th electrode is calculatedL2：
RL2=V2/I2；
Wherein RL2For the resistance value in testing longitudinal figure between second electrode and the 4th electrode, V2For in testing longitudinal figure Added voltage, I on two electrodes and the 4th electrode2For in testing longitudinal figure by second electrode, the 4th electrode and active area institute Current value in the loop of composition；
(2c) according to two resistance values R measured in (2a) and (2b)L1And RL2, build the square electricity of the active area of resolution chart Resistance computing formula：Rsh=(RL2L/W-RL1)/(1-L/W)。
2. method according to claim 1, wherein builds the square resistance calculating of resolution chart active area in step (2c) Formula, is carried out as follows：
(2c1) resistance value in transverse test figure between first electrode and the 3rd electrode is expressed as：
RL1=RA1+RA15+RA5+RA53+RA3,
Wherein, RA1For the resistance value of first electrode in transverse test figure, RA15For first electrode and rectangle in transverse test figure Resistance value between active area, RA5For the resistance value below rectangular active area in transverse test figure, RA53For transverse test figure In resistance value between the 3rd electrode and rectangular active area, RA3For the resistance value of the 3rd electrode in transverse test figure；
(2c2) resistance value in testing longitudinal figure between second electrode and the 4th electrode is expressed as：
RL2=RB2+RB25+RB5+RB54+RB4,
Wherein, RB2For the resistance value of second electrode in testing longitudinal figure, RB25For second electrode and rectangle in testing longitudinal figure Resistance value between active area, RB5For the resistance value below rectangular active area in testing longitudinal figure, RB54For testing longitudinal figure In resistance value between the 4th electrode and rectangular active area, RB4For the resistance value of the 4th electrode in testing longitudinal figure,
(2c3) according to the resistance value computing formula of existing rectangle transmission line model, in transverse test figure：Obtain each several part Resistance value be：
RA1=RshcLT/ W, RA15=RshL15/ W, RA5=RshL/W, RA53=RshL53/ W, RA3=RshcLT/W；
Wherein, LTFor length of transmission line；
(2c4) according to the resistance value computing formula of existing rectangle transmission line model, in testing longitudinal figure, each several part is obtained Resistance value be：
RB2=RshcLT/ L, RB25=RshL25/ L, RB5=RshW/L, RB54=RshL54/ L, RB4=RshcLT/L；
Wherein RshFor active area square resistance, RshcFor ohmic contact regions square resistance；
(2c5) by the R in step (2c3)A1, RA15, RA5, RA53, RA3The resistance expression formula in step (2c1) is substituted into, is obtained laterally Resistance value expression R in resolution chart between first electrode and the 3rd electrodeL1：
RL1=RshcLT/W+RshL15/W+RshL/W+RshL53/W+RshcLT/ W,
(2c6) by the R in step (2c4)B2, RB25, RB5, RB54, RB4The resistance expression formula in step (2c2) is substituted into, longitudinal direction is obtained Resistance value expression R in resolution chart between second electrode and the 4th electrodeL2：
RL2=RshcLT/L+RshL25/L+RshW/L+RshL54/L+RshcLT/ L,
(2c7) according to L in step (1)25=L15, L54=L53Relation, the R in step (2c6)L12Both sides are same to be multiplied by coefficient L/ After W, then with step (2c5) in RL1Differ from, obtain equation：
RL2L/W-RL1=Rsh-RshL/W；
(2c8) by the equation of step (2c7), the formula for deriving the active area square resistance in calculating resolution chart is：
Rsh=(RL2L/W-RL1)/(1-L/W)。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107248496A (en) * 2017-06-07 2017-10-13 西安电子科技大学 The modification method of ohmic contact regions square resistance

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