CN106675811A - 一种硅片清洗剂 - Google Patents
一种硅片清洗剂 Download PDFInfo
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- CN106675811A CN106675811A CN201611256783.5A CN201611256783A CN106675811A CN 106675811 A CN106675811 A CN 106675811A CN 201611256783 A CN201611256783 A CN 201611256783A CN 106675811 A CN106675811 A CN 106675811A
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- silicon wafer
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 239000012459 cleaning agent Substances 0.000 title abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- 239000006184 cosolvent Substances 0.000 claims abstract description 8
- 229920000642 polymer Polymers 0.000 claims abstract description 8
- 229940051841 polyoxyethylene ether Drugs 0.000 claims abstract description 8
- 229920000056 polyoxyethylene ether Polymers 0.000 claims abstract description 8
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 7
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004094 surface-active agent Substances 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- VKZRWSNIWNFCIQ-WDSKDSINSA-N (2s)-2-[2-[[(1s)-1,2-dicarboxyethyl]amino]ethylamino]butanedioic acid Chemical compound OC(=O)C[C@@H](C(O)=O)NCCN[C@H](C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-WDSKDSINSA-N 0.000 claims abstract description 3
- 239000003599 detergent Substances 0.000 claims description 17
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 14
- 229920001983 poloxamer Polymers 0.000 claims description 7
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 6
- -1 epoxide methyl ether Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- KJIOQYGWTQBHNH-UHFFFAOYSA-N undecanol Chemical compound CCCCCCCCCCCO KJIOQYGWTQBHNH-UHFFFAOYSA-N 0.000 claims description 4
- XFRVVPUIAFSTFO-UHFFFAOYSA-N 1-Tridecanol Chemical compound CCCCCCCCCCCCCO XFRVVPUIAFSTFO-UHFFFAOYSA-N 0.000 claims description 3
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims description 3
- 229920006243 acrylic copolymer Polymers 0.000 claims description 3
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims description 3
- 229920001495 poly(sodium acrylate) polymer Polymers 0.000 claims description 3
- NNMHYFLPFNGQFZ-UHFFFAOYSA-M sodium polyacrylate Chemical group [Na+].[O-]C(=O)C=C NNMHYFLPFNGQFZ-UHFFFAOYSA-M 0.000 claims description 3
- QGTQTQBVAMFOGO-UHFFFAOYSA-N 1,1,2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-heptadecafluorooctane-1-sulfonic acid;potassium Chemical compound [K].OS(=O)(=O)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F QGTQTQBVAMFOGO-UHFFFAOYSA-N 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 238000010790 dilution Methods 0.000 claims description 2
- 239000012895 dilution Substances 0.000 claims description 2
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims description 2
- 159000000000 sodium salts Chemical class 0.000 claims description 2
- 229940057402 undecyl alcohol Drugs 0.000 claims description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N Butanol Natural products CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims 1
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims 1
- 150000008064 anhydrides Chemical class 0.000 claims 1
- 229910021645 metal ion Inorganic materials 0.000 abstract description 9
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 229910052742 iron Inorganic materials 0.000 abstract description 4
- 229910052725 zinc Inorganic materials 0.000 abstract description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 150000002191 fatty alcohols Chemical class 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
- 239000003921 oil Substances 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 239000013522 chelant Substances 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 230000002000 scavenging effect Effects 0.000 description 3
- 238000013329 compounding Methods 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/83—Mixtures of non-ionic with anionic compounds
- C11D1/831—Mixtures of non-ionic with anionic compounds of sulfonates with ethers of polyoxyalkylenes without phosphates
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/825—Mixtures of compounds all of which are non-ionic
- C11D1/8255—Mixtures of compounds all of which are non-ionic containing a combination of compounds differently alcoxylised or with differently alkylated chains
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2068—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/37—Polymers
- C11D3/3746—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C11D3/3757—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions
- C11D3/3765—(Co)polymerised carboxylic acids, -anhydrides, -esters in solid and liquid compositions in liquid compositions
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/004—Surface-active compounds containing F
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
- C11D1/721—End blocked ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
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- Wood Science & Technology (AREA)
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- Detergent Compositions (AREA)
Abstract
本发明属于单晶硅片用具技术领域,尤其涉及一种硅片清洗剂。本发明公开了一种硅片清洗剂,其特征在于,由以下组分及其重量百分比组成:0.5‑2%的金属螯合剂、0.2‑2%的氟碳表面活性剂、5‑20%的脂肪醇聚氧乙烯醚、0.5‑3%的高分子助剂,0.5‑2%的助溶剂,1‑5%的碱剂,余量为水。本发明的有益效果是:在对硅片进行清洗的过程中,复配的EDTA和EDDS的金属螯合剂能高效螯合并去除硅片表面的金属离子,尤其是对后期硅片光电转换效率影响较大的Cu,Fe,Zn等离子,清洗剂无刺激性气味,对硅片具有良好的去、去油污效果,且不会对硅片造成严重的腐蚀。
Description
技术领域
本发明属于单晶硅片用具技术领域,尤其涉及一种硅片清洗剂。
背景技术
硅片加工多采用多线切割技术,此过程中碳化硅磨料切割硅片,会在硅片表面形成有机物沾污和金属离子沾污。金属离子污染物如铜Cu、铁Fe、锌Zn等的残留会影响硅片表面后续氧化生成的栅极薄膜的质量,进而造成组件易漏电、成品率低、可靠性差。由此可见,去除硅片表面的金属离子对于其后续组件的功效影响极大。与此同时,硅片表面氧化、指纹沾污等也会影响其光电转换效率。因此硅片在生产前一定要进行清洗,以去除表面污染物。
硅片表面清洗不能破坏硅片的性能,目前多采用水溶液进行清洗。由于配方等原因,常规的硅片清洗剂清洗时间较长,一般需要600-1200s,且清洗效果不理想,对硅片表面腐蚀严重,并可能出现斑点。
发明内容
本发明的目的在于解决以上所述的技术问题,提供一种清洗剂无刺激性气味,对硅片具有良好的去、去油污效果,且不会对硅片造成严重的腐蚀的硅片清洗剂,其技术方案如下:
一种硅片清洗剂,其特征在于,由以下组分及其重量百分比组成:
0.5-2%的金属螯合剂、0.2-2%的氟碳表面活性剂、5-20%的脂肪醇聚氧乙烯醚、0.5-3%的高分子助剂,0.5-2%的助溶剂,1-5%的碱剂,余量为水。
优选方式为,所述的金属螯合剂为乙二胺二琥珀酸钠盐和乙二胺四乙酸钠盐的组合物,且两者的重量比为1:1至1:10。
优选方式为,所述的全氟辛基磺酸钾、全氟烷基乙氧基甲醚的一种或多种。
优选方式为,所述的脂肪醇聚氧乙烯醚为异构十三醇聚氧乙烯(7)醚、异构十三醇聚氧乙烯(9)醚、异构十一醇聚氧乙烯(9)醚的一种或多种。
优选方式为,所述的高分子助剂为聚丙烯酸钠、马来酸酐/丙烯酸共聚物的一种或多种。
优选方式为,所述的助溶剂为3-甲氧基-3-甲基-1-丁醇。
采用权利要求1所述的硅片清洗剂清洗硅片的方法,其特征在于,具体步骤包括:
1)硅片清洗剂的配置:依次将0.5-2%的金属螯合剂、0.2-2%的氟碳表面活性剂、5-20%的脂肪醇聚氧乙烯醚、0.5-3%的高分子助剂,0.5-2%的助溶剂,1-5%的碱剂溶解到余量的水中,混合均匀;
2)清洗液的配置:将步骤1制备得到的清洗剂用水稀释,稀释比例为1:10至1:50;
3)硅片清洗:将硅片放入步骤2制备得到的清洗液进行清洗,清洗温度为40-60℃,清洗时间为300-600s。
乙二胺四乙酸钠盐对金属离子具有高效的螯合能力,尤其是Cu,Fe离子。将乙二胺四乙酸钠盐与乙二胺二琥珀酸钠盐按照一定的比例复配作为金属螯合剂使用,在硅片清洗中表现出极为优异的金属离子去除效果。
氟碳表面活性剂可将清洗液的表面张力大幅下降,在低表面张力环境下,脂肪醇聚氧乙烯醚表现出优异的去、去油污的效果。需要指出的是,异构醇聚氧乙烯醚的清洗效果最为优异。
使用了高分子助剂,聚丙烯酸钠或马来酸酐/丙烯酸共聚物或两者的组合物具有良好的抗再沉积效果,可防止去除的污渍和碳化硅等微粒再吸附到硅片表面。同时使用的助溶剂3-甲氧基-3-甲基-1-丁醇不仅具有良好的生物降解性,还可提高各组分的相容性。所使用的低浓度碱剂将能去除硅片表面因切割而产生的损坏层,同时不会造成硅片表面的严重腐蚀。
本发明的有益效果是:在对硅片进行清洗的过程中,复配的EDTA和EDDS的金属螯合剂能高效螯合并去除硅片表面的金属离子,尤其是对后期硅片光电转换效率影响较大的Cu,Fe,Zn等离子,清洗剂无刺激性气味,对硅片具有良好的去、去油污效果,且不会对硅片造成严重的腐蚀。
具体实施方式
下面具体说明实施例:
实施例1-4
按表1,依次将原料加入去离子水中,升温至40-50℃,搅拌均匀,冷却至室温,即可制备得到硅片清洗剂。
表1硅片清洗剂配方(表中数值为该组分的重量百分比)
分别将上述实施例1-4和对比例1进行硅片清洗。具体清洗方法如下:将10g实施例1-4和对比例1的清洗剂分别加入到装有240g去离子水的清洗槽中,混合均匀,再将硅片浸入清洗槽中,清洗时间为50℃,清洗温度为480s。
经实施例1-4洗涤后的硅片经目测表面光洁、无色片、无明显残留污渍。
清洗后硅片表面金属离子含量测定:
分别将实施例1和对比例1清洗剂清洗后的硅片浸泡在氢氟酸/硝酸(v:v=1:3)的混合酸液中,处理3分钟后,用电感耦合等离子光谱发生仪(ICP)测定浸泡液中的金属离子含量,并将摩尔量按照阿伏伽德罗常数转换并计算得到硅片单位面积上的金属原子数量。结果可以看到,与对比例清洗剂相比,经实施例1清洗剂清洗后的硅片表面,Cu,Fe,Zn等金属离子的含量明显更低。
去除油类污渍效率:
10*10cm的硅片,称重W1,之后在硅片上涂覆一层约1g的油污,于80℃中固化5小时,称重W2,将5g实施例1和对比例1硅片清洗剂分别均匀喷涂于硅片上,放置1小时,让清洗剂充分润湿,再放入120g 60℃的热水中超声清洗600s。取出,干燥至恒重,称重W3。
Claims (7)
1.一种硅片清洗剂,其特征在于,由以下组分及其重量百分比组成:0.5-2%的金属螯合剂、0.2-2%的氟碳表面活性剂、5-20%的脂肪醇聚氧乙烯醚、0.5-3%的高分子助剂,0.5-2%的助溶剂,1-5%的碱剂,余量为水。
2.如权利要求1所述的硅片清洗剂,其特征在于,所述的金属螯合剂为乙二胺二琥珀酸钠盐和乙二胺四乙酸钠盐的组合物,且两者的重量比为1:1至1:10。
3.如权利要求1所述的硅片清洗剂,其特征在于,所述的全氟辛基磺酸钾、全氟烷基乙氧基甲醚的一种或多种。
4.如权利要求1所述的硅片清洗剂,其特征在于,所述的脂肪醇聚氧乙烯醚为异构十三醇聚氧乙烯(7)醚、异构十三醇聚氧乙烯(9)醚、异构十一醇聚氧乙烯(9)醚的一种或多种。
5.如权利要求1所述的硅片清洗剂,其特征在于,所述的高分子助剂为聚丙烯酸钠、马来酸酐/丙烯酸共聚物的一种或多种。
6.如权利要求1所述的硅片清洗剂,其特征在于,所述的助溶剂为3-甲氧基-3-甲基-1-丁醇。
7.采用权利要求1所述的硅片清洗剂清洗硅片的方法,其特征在于,具体步骤包括:
1)硅片清洗剂的配置:依次将0.5-2%的金属螯合剂、0.2-2%的氟碳表面活性剂、5-20%的脂肪醇聚氧乙烯醚、0.5-3%的高分子助剂,0.5-2%的助溶剂,1-5%的碱剂溶解到余量的水中,混合均匀;
2)清洗液的配置:将步骤1制备得到的清洗剂用水稀释,稀释比例为1:10至1:50;
3)硅片清洗:将硅片放入步骤2制备得到的清洗液进行清洗,清洗温度为40-60℃,清洗时间为300-600s。
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CN114574868B (zh) * | 2022-03-01 | 2024-06-21 | 深圳市新骏翔科技有限公司 | 一种水基型金属清洗剂及其制备方法 |
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