CN106653894A - 一种用于柔性衬底铜铟镓硒薄膜太阳能电池的背接触层 - Google Patents
一种用于柔性衬底铜铟镓硒薄膜太阳能电池的背接触层 Download PDFInfo
- Publication number
- CN106653894A CN106653894A CN201611075921.XA CN201611075921A CN106653894A CN 106653894 A CN106653894 A CN 106653894A CN 201611075921 A CN201611075921 A CN 201611075921A CN 106653894 A CN106653894 A CN 106653894A
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- Prior art keywords
- flexible substrate
- back contact
- film solar
- solar cell
- galliun
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- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 239000002131 composite material Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 230000008021 deposition Effects 0.000 claims abstract description 20
- 229910052711 selenium Inorganic materials 0.000 claims description 22
- 239000011669 selenium Substances 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 230000007704 transition Effects 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 229910002669 PdNi Inorganic materials 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 48
- 239000010409 thin film Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611075921.XA CN106653894B (zh) | 2016-11-25 | 2016-11-25 | 一种用于柔性衬底铜铟镓硒薄膜太阳能电池的背接触层 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201611075921.XA CN106653894B (zh) | 2016-11-25 | 2016-11-25 | 一种用于柔性衬底铜铟镓硒薄膜太阳能电池的背接触层 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106653894A true CN106653894A (zh) | 2017-05-10 |
CN106653894B CN106653894B (zh) | 2018-06-29 |
Family
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Family Applications (1)
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CN201611075921.XA Active CN106653894B (zh) | 2016-11-25 | 2016-11-25 | 一种用于柔性衬底铜铟镓硒薄膜太阳能电池的背接触层 |
Country Status (1)
Country | Link |
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CN (1) | CN106653894B (zh) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105161569A (zh) * | 2015-08-18 | 2015-12-16 | 英利能源(中国)有限公司 | Mwt太阳能电池及其制备方法 |
CN105322035A (zh) * | 2014-06-05 | 2016-02-10 | 中物院成都科学技术发展中心 | 不锈钢箔太阳能电池及其制备方法 |
-
2016
- 2016-11-25 CN CN201611075921.XA patent/CN106653894B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105322035A (zh) * | 2014-06-05 | 2016-02-10 | 中物院成都科学技术发展中心 | 不锈钢箔太阳能电池及其制备方法 |
CN105161569A (zh) * | 2015-08-18 | 2015-12-16 | 英利能源(中国)有限公司 | Mwt太阳能电池及其制备方法 |
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CN106653894B (zh) | 2018-06-29 |
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Effective date of registration: 20201230 Address after: 233000 No.10, building 32, Zone 8, Guangcai market, bengshan District, Bengbu City, Anhui Province Patentee after: Bengbu Hongjing Technology Co.,Ltd. Address before: 528000 Room 203, 204, 2nd floor, No.1, Neihuan North Road, Yundonghai Avenue, Sanshui District, Foshan City, Guangdong Province Patentee before: Luo Lei |
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Effective date of registration: 20210512 Address after: No.102, building 14, eurocity, Sihe office, Sishui County, Jining City, Shandong Province 273200 Patentee after: Shandong Puhua Technology Research Co.,Ltd. Address before: 233000 No.10, building 32, Zone 8, Guangcai market, bengshan District, Bengbu City, Anhui Province Patentee before: Bengbu Hongjing Technology Co.,Ltd. |