CN106637389A - Technological method for automatically controlling industrialized diameter growth for czochralski crystal - Google Patents
Technological method for automatically controlling industrialized diameter growth for czochralski crystal Download PDFInfo
- Publication number
- CN106637389A CN106637389A CN201611116993.4A CN201611116993A CN106637389A CN 106637389 A CN106637389 A CN 106637389A CN 201611116993 A CN201611116993 A CN 201611116993A CN 106637389 A CN106637389 A CN 106637389A
- Authority
- CN
- China
- Prior art keywords
- diameter
- crucible
- liquid level
- video camera
- guide shell
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides a technological method for automatically controlling the industrialized diameter growth for czochralski crystal. The technological method comprises the following steps of (1) fixing the position of a flow guiding cylinder, and determining the position of a lower edge of the flow guiding cylinder in a growing furnace; (2) fixing the position of a liquid level, and determining the distance between the position of the liquid level of silicon solution in a crucible and the lower edge of the flow guiding cylinder; (3) fixing the position of a CCD video camera, enabling a camera of the CCD video camera to directly face a growth light ring of a single crystal of the silicon solution in the crucible, and acquiring the outer diameter during crystal pulling by the CCD video camera; (4) correcting the diameter of the single crystal in the first furnace; and (5) performing crystal pulling production. According to the technological method for automatically controlling the industrialized diameter growth for the czochralski crystal disclosed by the invention, when the industrialized large-scale production of the single crystal having a diameter specification is realized by the technological method, the growth diameter of the single crystal of each furnace is automatically controlled, so that the situation that the diameter values of the single crystal of each of furnaces are almost consistent is guaranteed, and repeated correction for each of the furnaces is not needed, the automation level is increased, the labor intensity is reduced, the labor cost is reduced, and the reclaimed material proportion is reduced.
Description
Technical field
The invention belongs to monocrystalline technical field of producing, more particularly, to a kind of pulling of crystals industrialization growth in thickness certainly
The process of control.
Background technology
In monocrystalline production, manually passed through using equipment CCD shootings and diameter control PID automatic program systems etc., and combination
It is controlled using caliper correction diameter；Because liquid level position can not be fixed during every stove crystal growth, and guide shell sometimes
Position, ccd video camera position and signal also can change, so be required for manually being corrected per the control of stove single crystal diameter, i.e., often
Stove crystal growth isometrical (holding) partly needs to turn to measure diameter after shoulder, and is corrected repeatedly.This process needs technology higher
Operator operated, operation repeatedly causes to operate hand labor intensity larger, and waste of time.When diameter is corrected
Due to different operating workman's personal equation it is larger, it is difficult to ensure the precision of diameter control.
The content of the invention
In view of this, it is contemplated that proposing a kind of process of pulling of crystals industrialization growth in thickness automatic control, with reality
Existing single crystal diameter is per stove identical industrialization production.
To reach above-mentioned purpose, the technical scheme is that what is be achieved in that：
A kind of process of pulling of crystals industrialization growth in thickness automatic control, comprises the following steps：
1), fixed guide shell position:
Guide shell lower edge position in stationary furnace body；
2), fixed liquid level position:
Silicon liquid level of solution is away from guide shell lower edge position in fixed crucible；
3), fixed ccd video camera position:
By the camera of ccd video camera just to silicon liquid crystal growth aperture in crucible, when gathering crystal pulling by ccd video camera
Outside dimension, fixed ccd video camera position simultaneously corrects the isometrical production of monocrystalline signal location constantly, shading value and contrast；
4), first stove diameter correction：
By measuring monocrystalline actual diameter of coming out of the stove, correction ccd video camera shows diameter；
5), crystal pulling production:
Crystal pulling is carried out apart from constant away from guide shell lower edge by silicon liquid level of solution position in crucible liter control system control crucible
Production.
Further, step 1) in, the distance test equipment arranged by body of heater top determines guide shell position, it is determined that side
Method is：Under body of heater blowing out state, thermal field is installed, crucible is not installed, size is placed in graphite shaft and is more than guide shell lower port diameter
Location panel, then guide shell is installed on body of heater to normal crystal pulling position, graphite shaft rise until location panel top surface and
Guide shell lower edge is contacted, by the way that, apart from X, numerical value X is and leads between the distance test device measuring test equipment and location panel
Flow cartridge lower edge and distance test equipment room distance, and the distance keeps constant per stove.
Further, step 2) in liquid level position determine that method is：Location panel is taken out, crucible is placed on into graphite shaft
On, the throwing raw materials in crucible, graphite shaft drops to initial position, starts heater to raw material heating in crucible until melting,
Crucible rises system control crucible and rises, by silicon liquid level of solution in distance test device measuring crucible away from the distance test equipment room
Apart from Y, it is Y-X to converse in crucible distance between liquid level and guide shell lower edge, when the work of Y-X values and liquid level away from guide shell bottom
When skill requires that setpoint distance is equal, graphite shaft stops movement, and the liquid level position is silicon solution crystal pulling position.
Further, step 4) in, by measuring monocrystalline actual diameter of coming out of the stove, correction ccd video camera shows diameter；Its school
Positive way is：Close and start after stove crystal pulling operation, monocrystalline is pulled to and turns to be isometrical drawing after shoulder, start to holding length from shoulder is turned
200mm, per 10mm diameter of caliper measurements, the ccd video camera for recording each test position shows diameter value and survey
Footpath apparatus measuring value, monocrystalline uses every 10mm of slide measure equity path portion to measure a diameter after coming out of the stove, to CCD diameter is shown
Value, caliper survey the comparative analysis of three groups of data of diameter and vernier caliper measurement diameter, the school when next monocrystalline keeps stable
Positive ccd video camera shows diameter value.
Relative to prior art, a kind of process tool of pulling of crystals industrialization growth in thickness automatic control of the present invention
There is following advantage：
In a kind of process of pulling of crystals industrialization growth in thickness automatic control of the present invention, realized by the method
When industrialized scale metaplasia produces a kind of monocrystalline of diameter specifications, every stove crystal growth diameter is automatically controlled, it is ensured that straight per stove monocrystalline
Footpath value is almost consistent, it is not necessary to correct repeatedly per stove, it is ensured that per the uniformity of stove single crystal diameter control, realize Automatic Diameter
Control.In addition, by the technology mode, saving man-hour, automatization level is improved；Labour intensity is reduced, cost of labor is reduced；Drop
It is low because of the extremely caused reclaimed materials ratio of diameter.
Description of the drawings
The accompanying drawing for constituting the part of the present invention is used for providing a further understanding of the present invention, the schematic reality of the present invention
Apply example and its illustrate, for explaining the present invention, not constituting inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 is step in a kind of process of the pulling of crystals industrialization growth in thickness automatic control described in the embodiment of the present invention
1 schematic diagram；
Fig. 2 is a kind of process step 2 of the pulling of crystals industrialization growth in thickness automatic control described in the embodiment of the present invention
Schematic diagram；
Fig. 3 is step in a kind of process of the pulling of crystals industrialization growth in thickness automatic control described in the embodiment of the present invention
3 schematic diagrames.
Description of reference numerals：
1- bodies of heater；2- location panels；3- guide shells；4- graphite shafts；
5- distance test equipment；6- crucibles；7- liquid levels；8-CCD video cameras；
Specific embodiment
It should be noted that in the case where not conflicting, the embodiment and the feature in embodiment in the present invention can phase
Mutually combination.
In describing the invention, it is to be understood that term " " center ", " longitudinal direction ", " horizontal ", " on ", D score,
The orientation or position relationship of the instruction such as "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom ", " interior ", " outward " is
Based on orientation shown in the drawings or position relationship, it is for only for ease of the description present invention and simplifies description, rather than indicates or dark
Showing the device or element of indication must have specific orientation, with specific azimuth configuration and operation therefore it is not intended that right
The restriction of the present invention.Additionally, term " first ", " second " etc. are only used for describing purpose, and it is not intended that indicating or implying phase
To importance or the implicit quantity for indicating indicated technical characteristic.Thus, the feature for defining " first ", " second " etc. can
To express or implicitly include one or more this feature.In describing the invention, unless otherwise stated, " multiple "
It is meant that two or more.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Company ", " connection " should be interpreted broadly, for example, it may be being fixedly connected, or being detachably connected, or be integrally connected；Can
Being to be mechanically connected, or electrically connect；Can be joined directly together, it is also possible to be indirectly connected to by intermediary, Ke Yishi
The connection of two element internals.For the ordinary skill in the art, above-mentioned term can be understood by concrete condition
Concrete meaning in the present invention.
Below with reference to the accompanying drawings and in conjunction with the embodiments describing the present invention in detail.
As Figure 1-3, a kind of process of pulling of crystals industrialization growth in thickness automatic control, comprises the following steps：
1), fixed guide shell position:
In Fig. 1, under the blowing out state of body of heater 1, thermal field is installed, crucible 6 is not installed, placement size is more than and leads in graphite shaft 4
The location panel 2 of the lower port diameter of flow cartridge 3, then installs guide shell 3 on the thermal field of body of heater 1, and graphite shaft 4 rises until positioning is flat
The top surface of plate 2 and the lower edge of guide shell 3 are contacted, and now distance is 0 between the lower edge of guide shell 3 and location panel 2, is arranged above in hot stove
Distance test equipment 5, is measured between the test equipment 5 and location panel 2 apart from X by the distance test equipment 5, and numerical value X is
For distance between the lower edge of guide shell 3 and distance test equipment 5；
2), fixed liquid level position:
In Fig. 2, the bell of body of heater 1 is lifted, the location panel 2 in graphite shaft 4 is taken out, crucible 6 is placed on into graphite
On axle 4, the throwing raw materials in crucible 6, graphite shaft declines, and bell is covered, and starts heater and raw material in crucible is heated, and works as original
After material fusing, crucible rises system control graphite shaft 4 and rises, and then drives crucible 6 to rise, and by distance test equipment 5 crucible 6 is measured
Interior silicon liquid level of solution 7, apart from Y, converses in crucible that distance is between liquid level 7 and guide shell lower edge away from the distance test equipment room
Y-X, when the setpoint distance of the Y-X values and liquid level 7 away from the bottom of guide shell 3 is equal, the setpoint distance is the crystal pulling of initial designs
Distance of the liquid level away from guide shell lower edge, graphite shaft 4 stops movement, and the position of liquid level 7 is silicon solution crystal pulling position；
3), the fixed position of ccd video camera 8:
In Fig. 3, adjustment is arranged on the position of ccd video camera 8 and angle on body of heater 1, by CCD camera just to crucible 6
Interior silicon liquid crystal growth aperture, it is ensured that the single crystal diameter signal that ccd video camera 8 is collected is accurately and fixed；
4), first stove diameter correction：
By measuring monocrystalline actual diameter of coming out of the stove, correction ccd video camera shows diameter；
In in order to ensure isometrical production, silicon rod diameter meets the requirements, and needs size periodic detection during channel angular crystal pulling, such as
Monthly or quarterly, it is or inferior per 20 stoves one, it is desirable to which that the measured value of ccd video camera is consistent with the size of silicon rod, that is, will
Ensure the measurement value stabilization of ccd video camera accurately, therefore, step 4) in, before production, ccd video camera is corrected, its correction
Mode is：Close and start after stove crystal pulling operation, monocrystalline is pulled to and turns to be isometrical drawing after shoulder, start to holding length 200mm from shoulder is turned,
The 200mm keep length be silicon rod etc. electrical path length, per 10mm diameter of caliper measurements, record each test position
The ccd video camera 8 put shows that diameter value and caliper measurements value, monocrystalline use the every of slide measure equity path portion after coming out of the stove
10mm measures a diameter, and the slide measure plays calibration function, shows that diameter value, caliper survey diameter and vernier to CCD
The comparative analysis of three groups of data of kind of calliper diameter, is that isometrical steady correction of timing CCD shows diameter value in next monocrystalline holding.
5), crystal pulling production:
Silicon solution liquid level position is measured by distance test equipment 5, and the measured value is fed back to into crucible and rise control system, by
Crucible rises the rate of climb and climb of control system control graphite shaft 4, it is ensured that crystal pulling liquid level position is away from guide shell 3 in crucible 6
Lower edge is constant and consistent with technique initialization requirement apart from Y-X values, that is, ensures that the crystal pulling liquid level position is constant, per stove in the position
Putting carries out crystal pulling production.
Presently preferred embodiments of the present invention is the foregoing is only, not to limit the present invention, all essences in the present invention
Within god and principle, any modification, equivalent substitution and improvements made etc. should be included within the scope of the present invention.
Claims (4)
1. a kind of process of pulling of crystals industrialization growth in thickness automatic control, it is characterised in that：Comprise the following steps：
1), fixed guide shell (3) position:
Fixed body of heater (1) inner draft tube (3) lower edge position；
2), fixed liquid level position:
The interior silicon liquid level of solution (7) of crucible (6) is fixed away from guide shell (3) lower edge position；
3), fixed ccd video camera (8) position:
By the camera of ccd video camera (8) just to the interior silicon liquid crystal growth aperture of crucible (6), gathered by ccd video camera (8)
Outside dimension during crystal pulling, fixed ccd video camera (8) position simultaneously corrects the isometrical production of monocrystalline signal location, shading value constantly
And contrast；
4), first stove diameter correction：
By measuring monocrystalline actual diameter of coming out of the stove, the display diameter of ccd video camera (8) is corrected；
5), crystal pulling production:
Control system is risen by crucible and controls interior silicon liquid level of solution (7) position of crucible (6) away from guide shell (3) lower edge apart from constant, entered
Row crystal pulling is produced.
2. the process of a kind of pulling of crystals industrialization growth in thickness automatic control according to claim 1, it is characterised in that：
Step 1) in, the distance test equipment (5) arranged by body of heater (1) top determines guide shell (3) position, and the method for determination is：
Under body of heater (1) blowing out state, thermal field is installed, crucible (6) is not installed, size is placed in graphite shaft (4) more than mouth under guide shell (3)
The location panel (2) of diameter, then installs guide shell (3) to normal crystal pulling position on body of heater (1), and graphite shaft (4) rises straight
Contact to location panel (2) top surface and guide shell (3) lower edge, the test equipment (5) is measured by distance test equipment (5) and is determined
Apart from X between position flat board (2), numerical value X is distance between guide shell (3) lower edge and distance test equipment (5), and the distance keeps
It is constant per stove.
3. the process of a kind of pulling of crystals industrialization growth in thickness automatic control according to claim 2, it is characterised in that：
Step 2) in liquid level position determine that method is：Location panel (2) is taken out, crucible (6) is placed in graphite shaft (4), in earthenware
The interior throwing raw materials of crucible (6), graphite shaft (4) drops to initial position, starts heater to the interior raw material heating of crucible (6) until melting
Change, crucible rises system control crucible (6) and rises, the interior silicon liquid level of solution (7) of crucible (6) is measured away from this by distance test equipment (5)
Distance test equipment room apart from Y, it is Y-X to converse between liquid level in crucible (7) and guide shell lower edge distance, when the Y-X values with
When technological requirement setpoint distance of the liquid level (7) away from guide shell (3) bottom is equal, graphite shaft (4) stops movement, liquid level (7) position
Put as silicon solution crystal pulling position.
4. the process of a kind of pulling of crystals industrialization growth in thickness automatic control according to claim 1 or 2 or 3, it is special
Levy and be：Step 4) in, by measuring monocrystalline actual diameter of coming out of the stove, correction ccd video camera shows diameter；Its correcting mode is：
Close and start after stove crystal pulling operation, monocrystalline is pulled to and turns to be isometrical drawing after shoulder, start to length 200mm is kept, per 10mm from shoulder is turned
With diameter of caliper measurements, ccd video camera (8) the display diameter value and caliper measurements of each test position are recorded
Value, monocrystalline uses every 10mm of slide measure equity path portion to measure a diameter after coming out of the stove, diameter value is shown to CCD, is calibrated
Instrument surveys the comparative analysis of three groups of data of diameter and vernier caliper measurement diameter, keeps steady correction of timing CCD to take the photograph in next monocrystalline
Camera shows diameter value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611116993.4A CN106637389A (en) | 2016-12-07 | 2016-12-07 | Technological method for automatically controlling industrialized diameter growth for czochralski crystal |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611116993.4A CN106637389A (en) | 2016-12-07 | 2016-12-07 | Technological method for automatically controlling industrialized diameter growth for czochralski crystal |
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| CN201611116993.4A Pending CN106637389A (en) | 2016-12-07 | 2016-12-07 | Technological method for automatically controlling industrialized diameter growth for czochralski crystal |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110257903A (en) * | 2019-06-24 | 2019-09-20 | 内蒙古中环协鑫光伏材料有限公司 | It is automatically positioned during automatic drop seed crystal to the method for termination decline at primary seed crystal |
| CN110528070A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | Pulling of crystals diameter measuring method |
| CN111218714A (en) * | 2018-11-26 | 2020-06-02 | 隆基绿能科技股份有限公司 | Method and device for measuring broken wire and storage medium |
| CN111593403A (en) * | 2020-05-07 | 2020-08-28 | 宁夏银和新能源科技有限公司 | Method for indirectly controlling crystal pulling diameter and method for producing Czochralski single crystal ingot |
| CN111826710A (en) * | 2019-04-23 | 2020-10-27 | 上海新昇半导体科技有限公司 | Method and device for controlling safe lifting of silicon melt crucible |
| CN112501685A (en) * | 2020-12-15 | 2021-03-16 | 南京晶能半导体科技有限公司 | Water cooling jacket centering assembly and centering method |
| CN113355741A (en) * | 2020-03-06 | 2021-09-07 | 内蒙古中环光伏材料有限公司 | Czochralski single crystal seeding process and single crystal furnace for seeding process |
| CN113789568A (en) * | 2021-09-18 | 2021-12-14 | 无锡唯因特数据技术有限公司 | Single crystal growth control method, apparatus and storage medium |
| CN114351246A (en) * | 2021-11-29 | 2022-04-15 | 银川隆基光伏科技有限公司 | Diameter adjusting method and device for silicon single crystal rod, electronic device and storage medium |
| CN115094518A (en) * | 2022-06-20 | 2022-09-23 | 陶莹 | Heater, crystal pulling furnace and method for controlling diameter of large-diameter monocrystalline silicon rod |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110528070A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | Pulling of crystals diameter measuring method |
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| CN111218714B (en) * | 2018-11-26 | 2021-06-08 | 隆基绿能科技股份有限公司 | Method and device for measuring broken wire and storage medium |
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| CN111826710A (en) * | 2019-04-23 | 2020-10-27 | 上海新昇半导体科技有限公司 | Method and device for controlling safe lifting of silicon melt crucible |
| CN110257903A (en) * | 2019-06-24 | 2019-09-20 | 内蒙古中环协鑫光伏材料有限公司 | It is automatically positioned during automatic drop seed crystal to the method for termination decline at primary seed crystal |
| CN113355741A (en) * | 2020-03-06 | 2021-09-07 | 内蒙古中环光伏材料有限公司 | Czochralski single crystal seeding process and single crystal furnace for seeding process |
| CN111593403A (en) * | 2020-05-07 | 2020-08-28 | 宁夏银和新能源科技有限公司 | Method for indirectly controlling crystal pulling diameter and method for producing Czochralski single crystal ingot |
| CN111593403B (en) * | 2020-05-07 | 2021-04-27 | 宁夏富乐德石英材料有限公司 | Method for indirectly controlling crystal pulling diameter and method for producing Czochralski single crystal ingot |
| CN112501685A (en) * | 2020-12-15 | 2021-03-16 | 南京晶能半导体科技有限公司 | Water cooling jacket centering assembly and centering method |
| CN113789568A (en) * | 2021-09-18 | 2021-12-14 | 无锡唯因特数据技术有限公司 | Single crystal growth control method, apparatus and storage medium |
| CN114351246A (en) * | 2021-11-29 | 2022-04-15 | 银川隆基光伏科技有限公司 | Diameter adjusting method and device for silicon single crystal rod, electronic device and storage medium |
| WO2023093042A1 (en) * | 2021-11-29 | 2023-06-01 | 银川隆基光伏科技有限公司 | Method and apparatus for adjusting diameter of monocrystalline silicon rod, and electronic device and storage medium |
| CN115094518A (en) * | 2022-06-20 | 2022-09-23 | 陶莹 | Heater, crystal pulling furnace and method for controlling diameter of large-diameter monocrystalline silicon rod |
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Application publication date: 20170510 |
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