CN113789568A - Single crystal growth control method, apparatus and storage medium - Google Patents
Single crystal growth control method, apparatus and storage medium Download PDFInfo
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- CN113789568A CN113789568A CN202111109773.XA CN202111109773A CN113789568A CN 113789568 A CN113789568 A CN 113789568A CN 202111109773 A CN202111109773 A CN 202111109773A CN 113789568 A CN113789568 A CN 113789568A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
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Abstract
The application discloses a method, a device and a storage medium for controlling single crystal growth, which relate to the technical field of single crystal manufacturing, and the method comprises the following steps: acquiring diameter information before crystal pulling, wherein the diameter information comprises the measured real diameter of the inner wall of the crucible, the target diameter required by the production specification of the single crystal and the acquired diameter of the crucible acquired by a visual acquisition system; in the crystal pulling process, acquiring a single crystal growth image at regular time through the vision acquisition system, and acquiring the linear distance between a single crystal growth aperture and the inner wall of the crucible according to the single crystal growth image; calculating the change speed of the linear distance in a preset period according to each linear distance acquired regularly in the preset period; and controlling the growth of the single crystal according to the diameter information and the change speed. Solves the problem of lag in the control of the single crystal growth in the prior art, and achieves the effect of flexibly and rapidly controlling the single crystal growth in real time.
Description
Technical Field
The invention relates to a single crystal growth control method, a single crystal growth control device and a storage medium, and belongs to the technical field of single crystal manufacturing.
Background
With the rapid development of the photovoltaic industry, a crystal pulling crystal growing method with high quality and high efficiency is urgently needed in a crystal pulling workshop, and a crystal bar with high specification is pulled, so that a solar cell with higher photoelectric conversion efficiency is produced. The main problem of the existing crystal pulling workshop is that the temperature of a thermal field and the pulling speed are adjusted by manual experience so as to control the diameter growth of crystals. The manual experience control method is difficult to meet the requirements of users on high-specification battery pieces, the development of the photovoltaic industry is greatly hindered, and therefore the intelligent control method for the single crystal growth is produced at the same time.
The existing single crystal growth methods include: firstly, obtaining a thermal field temperature and crystal diameter data pair, then obtaining a thermal field temperature-crystal diameter nonlinear large time lag model by adopting an output correlation time lag determination algorithm, a Leptoschitz and a stack type sparse automatic encoder, finally solving the thermal field temperature and controlling the crystal diameter.
However, since the above method relies on real-time measurement of crystal diameter data, the real-time measurement of the diameter data has a great influence, and measurement errors easily cause failure in training the prediction model. Meanwhile, the diameter of the crystal is controlled by adjusting the temperature of the thermal field, and the diameter is controlled to be too single, so that long time lag exists.
Disclosure of Invention
An object of the present invention is to provide a single crystal growth control method, apparatus and storage medium for solving the problems of the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
according to a first aspect, embodiments of the present invention provide a method of single crystal growth control, the method comprising:
acquiring diameter information before crystal pulling, wherein the diameter information comprises the measured real diameter of the inner wall of the crucible, the target diameter required by the production specification of the single crystal and the acquired diameter of the crucible acquired by a visual acquisition system;
in the crystal pulling process, acquiring a single crystal growth image at regular time through the vision acquisition system, and acquiring the linear distance between a single crystal growth aperture and the inner wall of the crucible according to the single crystal growth image;
calculating the change speed of the linear distance in a preset period according to each linear distance acquired regularly in the preset period;
and controlling the growth of the single crystal according to the diameter information and the change speed.
Optionally, the calculating, according to each linear distance obtained at regular time in a preset period, a change speed of the linear distance in the preset period includes:
acquiring at least two linear distances acquired in the preset period;
for any group of linear distances, determining to obtain an initial change speed according to the distance difference of each group of linear distances and the time difference of the two linear distances; each group of straight line distances comprises two straight line distances;
and calculating the change speed of the linear distance in the preset period according to each determined initial change speed.
Optionally, the controlling the growth of the single crystal according to the diameter information and the variation speed comprises:
determining a diameter scaling according to the acquisition diameter and the real diameter;
and controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change speed and the stage of crystal pulling.
Optionally, the controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change rate and the stage of the crystal pulling includes:
setting the crystal rotating speed, the crucible rotating speed and the crystal pulling speed when the seed crystal is preheated and the liquid level temperature reaches the diameter guiding temperature;
and in the melting stage, controlling the crystal rotating speed and the crucible rotating speed to be constant, and adjusting the crystal pulling speed so as to enable the changing speed to be kept at the first speed and be uniformly reduced in a preset time.
Optionally, the controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change rate and the stage of the crystal pulling includes:
in the shouldering stage, controlling the crystal pulling speed to keep the variation speed within a first speed range;
when the difference between the real diameter and the straight-line distance is a first preset value, adjusting the crystal pulling speed to keep the variation speed within a second speed range, wherein the first preset value is determined according to the target diameter and the diameter scaling, and the maximum speed of the second speed range is smaller than the minimum speed of the first speed range.
Optionally, the controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change rate and the stage of the crystal pulling includes:
in a shoulder turning stage, when the difference value between the real diameter and the linear distance is a second preset value, adjusting the crystal pulling speed to enable the variation speed to be kept in a third speed range, and further enabling the variation speed to be reduced to 0 when the difference value between the real diameter and the linear distance is a third preset value;
the second preset value and the third preset value are determined according to the target diameter and the diameter scaling, and the second preset value is different from the third preset value.
Optionally, the controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change rate and the stage of the crystal pulling includes:
and in the equal diameter stage, keeping the crystal pulling speed constant, and adjusting the crystal rotating speed and the crucible rotating speed to keep the numerical value of the linear distance as a preset numerical value.
Optionally, the controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change rate and the stage of the crystal pulling includes:
in the ending stage, keeping the crystal rotation speed and the crucible rotation speed constant, increasing the temperature of the thermal field and increasing the crystal pulling speed to increase the linear distance;
and when the difference value between the real diameter and the linear distance is a fourth preset value, reducing the crystal pulling speed, and increasing the crystal rotating speed and the crucible rotating speed, wherein the fourth preset value is determined according to the target diameter and the diameter scaling.
In a second aspect, there is provided a single crystal growth control apparatus comprising a memory having at least one program instruction stored therein and a processor that implements the method of the first aspect by loading and executing the at least one program instruction.
In a third aspect, there is provided a computer storage medium having stored therein at least one program instruction which is loaded and executed by a processor to implement the method of the first aspect.
Acquiring diameter information before crystal pulling, wherein the diameter information comprises the measured real diameter of the inner wall of the crucible, the target diameter required by the production specification of the single crystal and the acquired diameter of the crucible acquired by a visual acquisition system; in the crystal pulling process, acquiring a single crystal growth image at regular time through the vision acquisition system, and acquiring the linear distance between a single crystal growth aperture and the inner wall of the crucible according to the single crystal growth image; calculating the change speed of the linear distance in a preset period according to each linear distance acquired regularly in the preset period; and controlling the growth of the single crystal according to the diameter information and the change speed. Namely, the single crystal growth is controlled in real time according to the growth condition of the single crystal in the single crystal growth process, the problem of lag in the single crystal growth control in the prior art is solved, and the effect of flexibly and quickly controlling the single crystal growth in real time is achieved. In addition, the method and the device do not measure the diameter of the crystal but control the growth of the single crystal through change, and the problem of failed control of the crystal caused by diameter measurement errors in the prior art is solved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical solutions of the present invention more clearly understood and to implement them in accordance with the contents of the description, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Drawings
FIG. 1 is a flow chart of a method for controlling single crystal growth according to one embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1, a flow chart of a method for controlling the growth of a single crystal according to an embodiment of the present application is shown, and the method includes:
the true diameter D1 of the crucible inner wall can be measured by physical means, such as by calipers or the like. Of course, in practical implementation, the measurement may be obtained by other measurement methods, such as infrared measurement, which is not limited to this.
The target diameter D3 is the standard diameter of the currently desired single crystal gauge to be produced and is typically obtained by reading the specification.
The vision acquisition system may be an image acquisition device such as a camera, and after the vision acquisition system acquires an image including the crucible, the acquisition diameter D2 of the crucible in the image may be determined by analyzing the image. In actual implementation, the collected image may be analyzed through a neural network, or may be analyzed through binarization and other manners, and the specific analysis manner is not limited in this embodiment.
for example, the vision acquisition system acquires an image once every preset time interval, and identifies the linear distance D between the single crystal growth aperture and the inner wall of the crucible in the acquired image. Similar to the above recognition method, in this step, the linear distance may be recognized by a neural network, or may be recognized by other methods such as binarization, which is not limited to this.
103, calculating the change speed of the linear distance in a preset period according to each linear distance acquired regularly in the preset period;
the preset period may be a preset period, or may be a default period of the system, for example, the preset period is 2S. In practical implementation, the length of the preset period is greater than the time interval for the vision acquisition system to acquire images at regular time.
Because the vision acquisition system acquires the linear distance at regular time, and the preset period is greater than the time interval of the vision acquisition system for acquiring the images at regular time, a plurality of linear distances can be acquired in the preset period. In this step, the change speed of the linear distance in the preset period may be calculated according to the plurality of acquired linear distances and the time for acquiring each linear distance.
Optionally, the present step includes:
firstly, acquiring at least two linear distances acquired in the preset period;
secondly, for any group of linear distances, determining to obtain an initial change speed according to the distance difference of each group of linear distances and the time difference of the two linear distances; each group of straight line distances comprises two straight line distances;
an initial change speed.
Thirdly, calculating the change speed of the linear distance in the preset period according to each determined initial change speed.
In practical implementation, the average speed of each initial change speed may be calculated, and the calculated average speed is determined as the change speed of the linear distance in the preset period. Of course, the speed at the median among the plurality of initial change speeds may also be taken as the final change speed, which is not limited in this embodiment.
Exemplified by calculating the average velocity, the varying velocity vT═ d 1/# t1+ Λ + # tn/# n, n is a positive integer.
And 104, controlling the growth of the single crystal according to the diameter information and the change speed.
In practical implementation, the steps include:
firstly, determining a diameter scaling according to the acquisition diameter and the real diameter;
diameter scaling k-D2/D1.
Secondly, controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change speed and the stage of crystal pulling.
In the diameter guiding stage, when the preheating of the seed crystal is finished and the liquid level temperature reaches the diameter guiding temperature, setting the crystal rotating speed, the crucible rotating speed and the crystal pulling speed;
and in the melting stage, controlling the crystal rotating speed and the crucible rotating speed to be constant, and adjusting the crystal pulling speed so as to enable the changing speed to be kept at the first speed and be uniformly reduced in a preset time. Wherein, the first speed can be 5mm/min, and the preset time is 30 min.
In the shouldering stage, controlling the crystal pulling speed to keep the variation speed within a first speed range; when the difference between the real diameter and the straight-line distance is a first preset value, adjusting the crystal pulling speed to keep the variation speed within a second speed range, wherein the first preset value is determined according to the target diameter and the diameter scaling, and the maximum speed of the second speed range is smaller than the minimum speed of the first speed range.
The first speed range may be 0.5mm/min to 0.8mm/min, the second speed range may be 0.1mm/min to 0.3mm/min, and the first preset value may be D3 k a, where a is a coefficient, and in actual implementation, a may be set according to an empirical value or may be customized by a system, for example, a is 1/2, which is not limited in this embodiment, and k is a diameter scaling ratio.
In a shoulder turning stage, when the difference value between the real diameter and the linear distance is a second preset value, adjusting the crystal pulling speed to enable the variation speed to be kept in a third speed range, and further enabling the variation speed to be reduced to 0 when the difference value between the real diameter and the linear distance is a third preset value;
the second preset value and the third preset value are determined according to the target diameter and the diameter scaling, and the second preset value is different from the third preset value.
The second preset value may be D3 × k × b, the third preset value may be D3 × k × c, and b and c are different, and when actually implemented, b is 3/4, and c is 1. The maximum speed of the third speed range is less than the minimum speed of the second speed range, and in practical implementation, the third speed range may be 0.00mm/min-0.1 mm/min.
And in the equal diameter stage, keeping the crystal pulling speed constant, and adjusting the crystal rotating speed and the crucible rotating speed to keep the numerical value of the linear distance as a preset numerical value. In practical implementation, the variation range of the control straight line distance is +/-0.5 mm.
In the ending stage, keeping the crystal rotation speed and the crucible rotation speed constant, increasing the temperature of the thermal field and increasing the crystal pulling speed to increase the linear distance; and when the difference value between the real diameter and the linear distance is a fourth preset value, reducing the crystal pulling speed, and increasing the crystal rotating speed and the crucible rotating speed, wherein the fourth preset value is determined according to the target diameter and the diameter scaling.
The fourth preset value D3 × k × D may be set according to an empirical value, or may be customized by the system, for example, D is 2/3, which is not limited in this embodiment.
In practical implementation, the temperature of the thermal field is increased, the crystal pulling speed is increased, the rapid increase of D is ensured, and further, when D1-D is D3 k D, the crystal pulling speed is reduced, the crystal rotation speed and the crucible rotation speed are increased, and the ending work is completed.
In summary, diameter information is acquired before crystal pulling, and the diameter information comprises the measured real diameter of the inner wall of the crucible, the target diameter required by the production specification of the single crystal and the acquired diameter of the crucible acquired by a visual acquisition system; in the crystal pulling process, acquiring a single crystal growth image at regular time through the vision acquisition system, and acquiring the linear distance between a single crystal growth aperture and the inner wall of the crucible according to the single crystal growth image; calculating the change speed of the linear distance in a preset period according to each linear distance acquired regularly in the preset period; and controlling the growth of the single crystal according to the diameter information and the change speed. Namely, the single crystal growth is controlled in real time according to the growth condition of the single crystal in the single crystal growth process, the problem of lag in the single crystal growth control in the prior art is solved, and the effect of flexibly and quickly controlling the single crystal growth in real time is achieved. In addition, the method and the device do not measure the diameter of the crystal but control the growth of the single crystal through change, and the problem of failed control of the crystal caused by diameter measurement errors in the prior art is solved.
The present application also provides a single crystal growth control apparatus comprising a memory having stored therein at least one program instruction, and a processor that implements the method as described above by loading and executing the at least one program instruction.
The present application also provides a computer storage medium having stored therein at least one program instruction, which is loaded and executed by a processor to implement the method as described above.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method of controlling growth of a single crystal, the method comprising:
acquiring diameter information before crystal pulling, wherein the diameter information comprises the measured real diameter of the inner wall of the crucible, the target diameter required by the production specification of the single crystal and the acquired diameter of the crucible acquired by a visual acquisition system;
in the crystal pulling process, acquiring a single crystal growth image at regular time through the vision acquisition system, and acquiring the linear distance between a single crystal growth aperture and the inner wall of the crucible according to the single crystal growth image;
calculating the change speed of the linear distance in a preset period according to each linear distance acquired regularly in the preset period;
and controlling the growth of the single crystal according to the diameter information and the change speed.
2. The method according to claim 1, wherein the calculating a change speed of the linear distance in a preset period according to each linear distance acquired at fixed time in the preset period comprises:
acquiring at least two linear distances acquired in the preset period;
for any group of linear distances, determining to obtain an initial change speed according to the distance difference of each group of linear distances and the time difference of the two linear distances; each group of straight line distances comprises two straight line distances;
and calculating the change speed of the linear distance in the preset period according to each determined initial change speed.
3. The method of claim 1, wherein said controlling the growth of the single crystal based on said diameter information and said varying speed comprises:
determining a diameter scaling according to the acquisition diameter and the real diameter;
and controlling the growth of the single crystal according to the diameter information, the diameter scaling, the change speed and the stage of crystal pulling.
4. The method of claim 3, wherein said controlling the growth of the single crystal based on said diameter information, said diameter scaling, said rate of change, and the stage at which the crystal is pulled comprises:
setting the crystal rotating speed, the crucible rotating speed and the crystal pulling speed when the seed crystal is preheated and the liquid level temperature reaches the diameter guiding temperature;
and in the melting stage, controlling the crystal rotating speed and the crucible rotating speed to be constant, and adjusting the crystal pulling speed so as to enable the changing speed to be kept at the first speed and be uniformly reduced in a preset time.
5. The method of claim 3, wherein said controlling the growth of the single crystal based on said diameter information, said diameter scaling, said rate of change, and the stage at which the crystal is pulled comprises:
in the shouldering stage, controlling the crystal pulling speed to keep the variation speed within a first speed range;
when the difference between the real diameter and the straight-line distance is a first preset value, adjusting the crystal pulling speed to keep the variation speed within a second speed range, wherein the first preset value is determined according to the target diameter and the diameter scaling, and the maximum speed of the second speed range is smaller than the minimum speed of the first speed range.
6. The method of claim 3, wherein said controlling the growth of the single crystal based on said diameter information, said diameter scaling, said rate of change, and the stage at which the crystal is pulled comprises:
in a shoulder turning stage, when the difference value between the real diameter and the linear distance is a second preset value, adjusting the crystal pulling speed to enable the variation speed to be kept in a third speed range, and further enabling the variation speed to be reduced to 0 when the difference value between the real diameter and the linear distance is a third preset value;
the second preset value and the third preset value are determined according to the target diameter and the diameter scaling, and the second preset value is different from the third preset value.
7. The method of claim 3, wherein said controlling the growth of the single crystal based on said diameter information, said diameter scaling, said rate of change, and the stage at which the crystal is pulled comprises:
and in the equal diameter stage, keeping the crystal pulling speed constant, and adjusting the crystal rotating speed and the crucible rotating speed to keep the numerical value of the linear distance as a preset numerical value.
8. The method of claim 3, wherein said controlling the growth of the single crystal based on said diameter information, said diameter scaling, said rate of change, and the stage at which the crystal is pulled comprises:
in the ending stage, keeping the crystal rotation speed and the crucible rotation speed constant, increasing the temperature of the thermal field and increasing the crystal pulling speed to increase the linear distance;
and when the difference value between the real diameter and the linear distance is a fourth preset value, reducing the crystal pulling speed, and increasing the crystal rotating speed and the crucible rotating speed, wherein the fourth preset value is determined according to the target diameter and the diameter scaling.
9. A single crystal growth control apparatus comprising a memory having stored therein at least one program instruction, and a processor that implements the method of any of claims 1 to 8 by loading and executing the at least one program instruction.
10. A computer storage medium having stored therein at least one program instruction which is loaded and executed by a processor to implement the method of any one of claims 1 to 8.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114046669A (en) * | 2022-01-07 | 2022-02-15 | 江苏东方四通科技股份有限公司 | Self-adaptive control method and system for crystal growth power supply parameters |
| CN114399489A (en) * | 2022-01-12 | 2022-04-26 | 苏州天准科技股份有限公司 | Method for monitoring aperture diameter in crystal pulling process, storage medium and terminal |
| CN114752996A (en) * | 2022-03-22 | 2022-07-15 | 无锡海纳智能科技有限公司 | Intelligent adjustment method for monocrystalline silicon shoulder-laying stage forking and storage medium |
| CN115896922A (en) * | 2023-02-16 | 2023-04-04 | 杭州天桴光电技术有限公司 | Device for growth and in-situ annealing of large-size calcium fluoride single crystal |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246535A (en) * | 1990-04-27 | 1993-09-21 | Nkk Corporation | Method and apparatus for controlling the diameter of a silicon single crystal |
| JP2007254178A (en) * | 2006-03-20 | 2007-10-04 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method for growing single crystal and single crystal growing device |
| CN106637389A (en) * | 2016-12-07 | 2017-05-10 | 内蒙古中环光伏材料有限公司 | Technological method for automatically controlling industrialized diameter growth for czochralski crystal |
| CN109183141A (en) * | 2018-10-29 | 2019-01-11 | 上海新昇半导体科技有限公司 | A kind of crystal growth control method, device, system and computer storage medium |
| CN110528070A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | Pulling of crystals diameter measuring method |
-
2021
- 2021-09-18 CN CN202111109773.XA patent/CN113789568A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246535A (en) * | 1990-04-27 | 1993-09-21 | Nkk Corporation | Method and apparatus for controlling the diameter of a silicon single crystal |
| JP2007254178A (en) * | 2006-03-20 | 2007-10-04 | Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 | Method for growing single crystal and single crystal growing device |
| CN106637389A (en) * | 2016-12-07 | 2017-05-10 | 内蒙古中环光伏材料有限公司 | Technological method for automatically controlling industrialized diameter growth for czochralski crystal |
| CN110528070A (en) * | 2018-05-25 | 2019-12-03 | 隆基绿能科技股份有限公司 | Pulling of crystals diameter measuring method |
| CN109183141A (en) * | 2018-10-29 | 2019-01-11 | 上海新昇半导体科技有限公司 | A kind of crystal growth control method, device, system and computer storage medium |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114046669A (en) * | 2022-01-07 | 2022-02-15 | 江苏东方四通科技股份有限公司 | Self-adaptive control method and system for crystal growth power supply parameters |
| CN114399489A (en) * | 2022-01-12 | 2022-04-26 | 苏州天准科技股份有限公司 | Method for monitoring aperture diameter in crystal pulling process, storage medium and terminal |
| CN114752996A (en) * | 2022-03-22 | 2022-07-15 | 无锡海纳智能科技有限公司 | Intelligent adjustment method for monocrystalline silicon shoulder-laying stage forking and storage medium |
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