WO2023093042A1

WO2023093042A1 - Method and apparatus for adjusting diameter of monocrystalline silicon rod, and electronic device and storage medium

Info

Publication number: WO2023093042A1
Application number: PCT/CN2022/102483
Authority: WO
Inventors: 徐鹏国; 张建华; 李朋朋; 闫颖; 李博一; 杨丽; 马志财; 买世杰; 张强; 何秉轩
Original assignee: 银川隆基光伏科技有限公司
Priority date: 2021-11-29
Filing date: 2022-06-29
Publication date: 2023-06-01
Also published as: CN114351246A

Abstract

A method and apparatus for adjusting the diameter of a monocrystalline silicon rod, and an electronic device and a storage medium. The method for adjusting the diameter of a monocrystalline silicon rod comprises: acquiring a measured diameter of a first monocrystalline silicon rod, the drawing of which has been completed, and on the basis of the measured diameter, calculating the actual diameter of the first monocrystalline silicon rod, wherein the measured diameter is measured by a polishing machine; and on the basis of the actual diameter and a preset target production diameter, adjusting a target calibration diameter, during equal-diameter calibration, of a second monocrystalline silicon rod to be drawn. Therefore, the accuracy of performing equal-diameter calibration on a second monocrystalline silicon rod on the basis of an adjusted target calibration diameter is higher, such that an error between the actual diameter of the second monocrystalline silicon rod and a target production diameter can be reduced. In addition, the accuracy of a measured diameter that is measured by using a polishing machine is higher, such that the accuracy of the actual diameter that is calculated on the basis of the measured diameter is higher, and thus the accuracy of the adjusted target calibration diameter is higher.

Description

Method, device, electronic equipment and storage medium for adjusting diameter of single crystal silicon rod

This application claims the priority of the Chinese patent application submitted to the China Patent Office on November 29, 2021 with the application number 202111433276.5 and the title "A method for adjusting the diameter of a single crystal silicon rod, a device, an electronic device, and a storage medium", all of which The contents are incorporated by reference in this application.

technical field

The present application relates to the field of semiconductor technology, in particular to a method, device, electronic equipment and storage medium for adjusting the diameter of a single crystal silicon rod.

Background technique

As a semiconductor material, monocrystalline silicon is mainly used in photovoltaic and semiconductor fields. Most semiconductor monocrystalline silicon is produced by the CZ (Czochralski) Czochralski method.

In the production process of the Czochralski method, the polysilicon raw material is first put into a quartz crucible and heated to a molten state, and a monocrystalline silicon seed crystal is suspended above the liquid surface by a cable, and the seed crystal is lowered to contact with the liquid surface. When the seed crystal and the melt reach thermal equilibrium, the liquid surface will be adsorbed under the seed crystal under the support of surface tension; the seed crystal will rotate and lift upward slowly, and the adsorbed melt will also move upward accordingly, thus forming a supercooled state. The supercooled silicon atoms will form regular crystals at the solid-liquid interface along the arrangement structure of the seed crystal. At the lower end of the seed crystal, seeding, shouldering, shoulder turning, equal diameter and finishing are carried out in sequence. If the whole growth environment is stable, the crystallization can be repeated on the previously formed single crystal, and finally a cylindrical single crystal silicon rod is formed. . After drawing a single crystal silicon rod, there will still be a part of the silicon material in the quartz crucible. At this time, it will be fed into the quartz crucible again through the secondary feeder to realize continuous crystal pulling, so that each single crystal furnace can pull Multiple monocrystalline silicon rods are produced.

During the growth process of single crystal silicon, in order to ensure that the change in diameter is within the allowable range, it is usually necessary to perform equal diameter calibration on the single crystal silicon rods in the equal diameter stage. In the equal diameter calibration process, the target calibration diameter is set based on the target production diameter, the diameter of the single crystal silicon rod is measured, and then the diameter calibration is performed based on the measured diameter and the target calibration diameter.

Due to the high temperature and negative pressure inside the single crystal furnace, conventional measurement methods cannot directly measure the crystal diameter in the furnace. Usually, during the crystal growth process, the solid-liquid interface between the single crystal silicon rod and the solution will form a bright halo. By measuring the diameter of the halo, the diameter of the single crystal silicon rod can be calculated based on the diameter of the halo.

In the prior art, the image inside the single crystal furnace is usually collected by a CCD (Charge Coupled Device), and the diameter of the halo is calculated based on the image. However, due to factors such as the installation position of the CCD, thermal field components, and liquid surface temperature, the calculated diameter will be inaccurate, which in turn will lead to inaccurate calibration of the equal diameter, resulting in a large error between the actual diameter of the single crystal silicon rod and the target production diameter. .

Contents of the invention

In view of the above problems, the embodiment of the present application proposes a method, device, electronic equipment and storage medium for adjusting the diameter of a single crystal silicon rod to improve the accuracy of equal-diameter calibration and reduce the actual diameter of a single crystal silicon rod and the target production. diameter error.

According to one aspect of the embodiments of the present application, a method for adjusting the diameter of a single crystal silicon rod is provided, the method comprising:

Obtaining the measured diameter of the drawn first silicon single crystal rod, and calculating the actual diameter of the first single crystal silicon rod based on the measured diameter; the measured diameter is obtained by measuring with a polishing machine;

Based on the actual diameter and the preset target production diameter, the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration is adjusted.

Optionally, said obtaining the measured diameter of the drawn first single crystal silicon rod includes: obtaining multiple measured diameters at different positions on said first single crystal silicon rod; said calculating based on said measured diameter The actual diameter of the first single crystal silicon rod includes: from the plurality of measured diameters, selecting a measured diameter whose difference from the target production diameter is within a preset first error range; The average value of the selected measured diameters is determined as the actual diameter of the first single crystal silicon rod.

Optionally, the obtaining multiple measured diameters at different positions on the first single crystal silicon rod includes: obtaining different positions on the middle section of the first single crystal silicon rod after the head and tail are removed after cutting multiple measurement diameters.

Optionally, the adjusting the target calibration diameter of the second single crystal silicon rod to be drawn based on the actual diameter and the preset target production diameter during equal diameter calibration includes: obtaining the first single crystal silicon rod The first ratio corresponding to the rod, based on the actual diameter, the target production diameter and the first ratio, calculate the second ratio corresponding to the second single crystal silicon rod; the first ratio and the second The ratios represent pixel values corresponding to each unit length; the target calibration diameter of the second single crystal silicon rod during equal-diameter calibration is adjusted based on the second ratio.

Optionally, the calculating the second ratio corresponding to the second single crystal silicon rod based on the actual diameter, the target production diameter and the first ratio includes: combining the first ratio with the The second ratio is calculated on the principle that the product of the target production diameter and the product of the second ratio and the actual diameter are equal.

Optionally, the adjusting the target calibration diameter of the second single crystal silicon rod during isometric calibration based on the second ratio includes: a difference between the first ratio and the second ratio When the preset second error range is exceeded, the target calibration diameter of the second single crystal silicon rod during isometric calibration is adjusted based on the second ratio.

Optionally, the adjusting the target calibration diameter of the second single crystal silicon rod during equal-diameter calibration based on the second ratio includes: generating first task information including the second ratio, adding the second ratio to A task information is pushed to the single crystal furnace for pulling the second single crystal silicon rod, so that the single crystal furnace determines the product of the second ratio and the target production diameter as the second The target calibration diameter of a single crystal silicon rod during equal diameter calibration.

Optionally, the adjusting the target calibration diameter of the second single crystal silicon rod during isometric calibration based on the second ratio includes: determining the product of the second ratio and the target production diameter as The target calibration diameter of the second single crystal silicon rod during equal-diameter calibration; generating second task information including the target calibration diameter, and pushing the second task information to the device used to pull the second single crystal Single crystal furnace for silicon rods.

Optionally, said obtaining the measured diameter of the drawn first single crystal silicon rod includes: taking the Nth single crystal silicon rod before the second single crystal silicon rod as the first single crystal silicon rod , to obtain the measured diameter of the first single crystal silicon rod; wherein, N is a positive integer greater than or equal to 1.

According to another aspect of the embodiments of the present application, a device for adjusting the diameter of a single crystal silicon rod is provided, the device comprising:

An acquisition module, configured to acquire the measured diameter of the drawn first single crystal silicon rod;

a calculation module, configured to calculate the actual diameter of the first single crystal silicon rod based on the measured diameter; the measured diameter is obtained by measuring the polishing machine;

The adjustment module is configured to adjust the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration based on the actual diameter and the preset target production diameter.

Optionally, the acquiring module is specifically configured to acquire a plurality of measured diameters at different positions on the first single crystal silicon rod; the calculation module includes: a diameter screening unit configured to select from the plurality of measured diameters , to screen out the measured diameter whose difference with the target production diameter is within the preset first error range; the diameter calculation unit is used to determine the average value of the screened out measured diameter as the first unit The actual diameter of the crystalline silicon rod.

Optionally, the acquiring module is specifically configured to acquire a plurality of measured diameters at different positions on the middle section of the first single crystal silicon rod after the head and the tail are removed after being cut.

Optionally, the adjustment module includes: a ratio calculation unit, configured to obtain a first ratio corresponding to the first single crystal silicon rod, and calculate the calculated ratio based on the actual diameter, the target production diameter, and the first ratio. The second ratio corresponding to the second single crystal silicon rod, the first ratio and the second ratio both represent the corresponding pixel value per unit length; the diameter adjustment unit is used to adjust the first ratio based on the second ratio The target calibration diameter of the two single crystal silicon rods during equal diameter calibration.

Optionally, the ratio calculating unit is specifically configured to calculate the second ratio according to the principle that the product of the first ratio and the target production diameter is equal to the product of the second ratio and the actual diameter .

Optionally, the diameter adjusting unit is specifically configured to adjust the first ratio based on the second ratio when the difference between the first ratio and the second ratio exceeds a preset second error range. The target calibration diameter of the two single crystal silicon rods during equal diameter calibration.

Optionally, the diameter adjustment unit includes: a first pushing subunit, configured to generate first task information including the second ratio, and push the first task information to a subunit for pulling the second sheet. A single crystal furnace for crystalline silicon rods, so that the single crystal furnace determines the product of the second ratio and the target production diameter as the target calibration diameter of the second single crystal silicon rod during equal diameter calibration.

Optionally, the diameter adjustment unit includes: a second pushing subunit, configured to determine the product of the second ratio and the target production diameter as the value of the second single crystal silicon rod during equal diameter calibration. target calibration diameter; generating second task information including the target calibration diameter, and pushing the second task information to a single crystal furnace for pulling the second single crystal silicon rod.

Optionally, the obtaining module is specifically configured to use the Nth single crystal silicon rod before the second single crystal silicon rod as the first single crystal silicon rod, and obtain the measurement of the first single crystal silicon rod Diameter; where, N is a positive integer greater than or equal to 1.

According to another aspect of the embodiments of the present application, an electronic device is provided, including: one or more processors; and one or more computer-readable storage media storing instructions thereon; when the instructions are executed by the When the above one or more processors are executed, the processors are made to execute the method for adjusting the diameter of a single crystal silicon rod as described in any one of the above.

According to another aspect of the embodiments of the present application, there is provided a computer-readable storage medium, on which a computer program is stored, and when the computer program is executed by a processor, the processor executes the The diameter adjustment method of the single crystal silicon rod described above.

In the embodiment of the present application, the measured diameter of the drawn first single crystal silicon rod measured by the polishing machine is obtained, the actual diameter of the first single crystal silicon rod is calculated based on the measured diameter, and based on the actual The diameter and the preset target production diameter are used to adjust the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration. It can be seen that, in the embodiment of the present application, on the one hand, based on the actual diameter and the target production diameter of the first single crystal silicon rod, the target calibration diameter of the second single crystal silicon rod during equal diameter calibration is adjusted, taking into account the actual diameter and the target production diameter. The impact of the error between the target production diameters on the equal diameter calibration process, based on the adjusted target calibration diameter, the accuracy of equal diameter calibration for the second single crystal silicon rod is higher, thereby reducing the cost of the second single crystal silicon rod. The error between the actual diameter and the target production diameter; on the other hand, due to the high automatic detection accuracy of the polishing machine, the accuracy of the measured diameter obtained by using the polishing machine is higher, making the accuracy of the actual diameter calculated based on the measured diameter Higher, and thus a higher accuracy of the target calibration diameter adjusted based on the actual diameter and the target production diameter.

Description of drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the accompanying drawings that need to be used in the description of the embodiments of the present application. Obviously, the accompanying drawings in the following description are only some of the accompanying drawings of the present application , for those skilled in the art, other drawings can also be obtained according to these drawings on the premise of not paying creative work.

Fig. 1 is a flowchart of the steps of a method for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present application.

Fig. 2 is a schematic flowchart of a method for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present application.

Fig. 3 is a structural block diagram of a device for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present application.

Fig. 4 is a structural block diagram of another device for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present application.

FIG. 5 is a schematic structural diagram of an electronic device according to an embodiment of the present application.

specific embodiment

The technical solutions in the embodiments of the application will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the application. Apparently, the described embodiments are only part of the embodiments of the application, rather than the entirety of the application. Example. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

Referring to FIG. 1 , it shows a flowchart of steps of a method for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present application.

As shown in Figure 1, the method for adjusting the diameter of a single crystal silicon rod may include the following steps:

In step 101, the measured diameter of the drawn first silicon single crystal rod is obtained, and the actual diameter of the first single crystal silicon rod is calculated based on the measured diameter.

In implementation, the actual diameter of the first single crystal silicon rod can be measured manually with a vernier caliper, but due to individual differences and other reasons, the accuracy of the actual diameter obtained by manual measurement is difficult to guarantee.

In the actual production process, the single crystal production workshop will use a single crystal furnace to pull out single crystal silicon rods that meet the specifications according to the requirements of the production order, and the drawn single crystal silicon rods will flow into the machining workshop for mechanical processing Process. In the mechanical processing process, the drawn single crystal silicon rod is processed, and the processing process includes cutting (cutting a whole single crystal silicon rod into N sections), cutting (cutting the single crystal silicon rod into segments by The circle is cut into a rectangular parallelepiped, and the four corners of the rectangular parallelepiped retain the whole part of the circle), and polished (the surface of the rectangular parallelepiped is subjected to surface polishing). Wherein, before the polishing machine performs the polishing operation, the polishing machine can measure the measured diameter of the single crystal silicon rod through a contact probe.

Therefore, in the embodiment of the present application, after the drawing of the first silicon single crystal rod is completed, the polishing machine can measure the measured diameter of the first single crystal silicon rod through a contact probe. When calculating the actual diameter of the first single crystal silicon rod, it is possible to obtain the measured diameter of the first single crystal silicon rod measured by the polishing machine, and then calculate the diameter of the first single crystal silicon rod based on the measured diameter of the first single crystal silicon rod actual diameter. The monitoring accuracy of the polishing machine is high, so the accuracy of the actual diameter calculated by this method is higher.

Step 102 , based on the actual diameter and the preset target production diameter, adjust the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration.

The target production diameter refers to the expected target diameter specified in the production order.

The target calibration diameter refers to the target diameter referenced when the diameter is calibrated in the isometric calibration stage.

The target calibration diameter is manually calculated and input into the single crystal furnace according to the target production diameter and the corresponding ratio. The ratio represents the pixel value corresponding to a unit length (such as 1 mm), so the target calibration diameter represents the pixel value corresponding to the target production diameter. Usually, in order to prevent the drawn diameter from being too small during the equal diameter process, resulting in the inability to process square rods in the back-end squaring process, the target calibration diameter set by the single crystal furnace is usually a few millimeters larger than the target production diameter ( Such as 1-2mm).

Since there may be a certain error between the actual diameter of the first single crystal silicon rod after the equal diameter calibration process and the target production diameter, it can be based on the difference between the actual diameter of the first single crystal silicon rod and the preset target production diameter In this case, adjust the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration, so that the diameter is calibrated based on the adjusted target calibration diameter in the equal diameter calibration process, so that the second single crystal silicon rod The actual diameter is closer to the target production diameter.

This solution can be applied to the CZ pull method, the RCZ (multi-charging crystal pulling) method, and the CCZ (continuous crystal pulling) method.

In the embodiment of the present application, on the one hand, based on the actual diameter and the target production diameter of the first single crystal silicon rod, the target calibration diameter of the second single crystal silicon rod is adjusted during equal-diameter calibration, taking into account the difference between the actual diameter and the target production diameter. The influence of the error between them on the equal-diameter calibration process, the accuracy of equal-diameter calibration for the second single-crystal silicon rod based on the adjusted target calibration diameter is higher, so that the actual diameter of the second single-crystal silicon rod and the target diameter can be reduced. The error of the production diameter; on the other hand, due to the high precision of the automatic detection of the polishing machine, the accuracy of the measured diameter obtained by using the polishing machine is higher, which makes the accuracy of the actual diameter calculated based on the measured diameter higher, and then The accuracy of the target calibration diameter adjusted based on the actual diameter and the target production diameter is higher.

Referring to FIG. 2 , it shows a schematic flowchart of a method for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present application.

As shown in Figure 2, the method for adjusting the diameter of a single crystal silicon rod may include the following steps:

In step 201, the polishing machine acquires measurement related data of the first single crystal silicon rod.

The polishing machine uses a contact probe to measure the diameter of the drawn first single crystal silicon rod to obtain the measured diameter of the first single crystal silicon rod.

Optionally, the measured diameter of the first single crystal silicon rod may include multiple measured diameters at different positions on the first single crystal silicon rod.

Each monocrystalline silicon rod has a unique number (for example, the number can be 10 digits, etc.). In the mechanical processing process, the first single crystal silicon rod will be cut to obtain multi-segment single crystal silicon rods, and each segment of single crystal silicon rods will be numbered according to the order of cutting (for example, the number can be 13 digits, etc., where the first The 10th digit is the serial number of the first single crystal silicon rod, and the last 3 digits represent the serial number of the single crystal silicon rod).

In an optional implementation manner, the polishing machine may separately measure the diameter of each segment of the monocrystalline silicon rod obtained after cutting. During the measurement process, for any section of single crystal silicon rod obtained after cutting, the polishing machine can measure the diameter of different positions on the section of single crystal silicon rod, and each position can obtain a measurement diameter, so as to obtain the section of single crystal silicon rod Multiple measured diameters at different locations on the silicon rod. After the diameter measurement is completed, the polishing machine can compare the number of the first single crystal silicon rod, the number of each segment of single crystal silicon rod obtained after cutting, and the multiple measured diameters at different positions on each segment of single crystal silicon rod obtained after cutting and other information, determined as the measurement related data of the first single crystal silicon rod. Polishers can save measurement related data to the polisher database.

In another optional implementation manner, the polishing machine may measure the diameter of the entire first single crystal silicon rod before cutting. During the measurement process, the polishing machine can measure the diameters of different positions on the whole first single crystal silicon rod before cutting, and a measurement diameter can be obtained for each position, thereby obtaining different positions on the first single crystal silicon rod multiple measurement diameters. After the diameter measurement is completed, the polishing machine can determine the serial number of the first single crystal silicon rod, the multiple measured diameters at different positions on the whole first single crystal silicon rod before cutting, and other information as the first single crystal silicon rod. Measure relevant data. Polishers can save measurement related data to the polisher database.

Step 202, the polishing machine records the measurement related data of the first single crystal silicon rod into the first table.

A first table (which may be named MES_polishing) is stored in the single crystal central control database, and the first table is used to record relevant data generated by each production workshop.

After the diameter measurement is completed, the polisher in the machining workshop acquires the measurement-related data of the first single-crystal silicon rod, and records the measurement-related data of the first single-crystal silicon rod into the first table.

The single crystal production workshop will acquire the drawing-related data of the first single-crystal silicon rod generated in the process of pulling the first single-crystal silicon rod, and record the drawing-related data of the first single-crystal silicon rod into the first table. The data related to the drawing of the first single crystal silicon rod may include but not limited to: the number of the single crystal furnace used to pull the first single crystal silicon rod, the number of the first single crystal silicon rod, the target production diameter (the same single crystal silicon rod The target production diameter of the first single crystal silicon rod drawn by the crystal furnace is the same as that of the second single crystal silicon rod), the target calibration diameter (pixel value) of the first single crystal silicon rod, and the corresponding first single crystal silicon rod proportions, etc. Wherein, the first ratio represents the corresponding pixel value per unit length. If the first single crystal silicon rod is the first single crystal silicon rod drawn by the single crystal furnace, the first ratio may be an initial ratio preset according to actual experience.

It can be understood that other workshops will also record relevant data generated during the production process into the first table, which will not be discussed in detail in this embodiment.

In step 203, the diameter control system grabs calibration-related data from the first table and writes it into the second table.

Since the amount of data recorded in the first table is relatively large, and the calibration-related data required by the diameter control system for diameter adjustment is part of the data in the first table, the diameter control system can be real-time or periodically from the first table. Grab the calibration-related data required by itself, and write the calibration-related data into the second table (which can be named puller_base_info). Then, the data can be read from the second table when the diameter is adjusted.

In an optional implementation manner, corresponding to the situation where the above-mentioned polishing machine separately measures the diameter of each section of single crystal silicon rod obtained after cutting, when adjusting the diameter of the second single crystal silicon rod, the second single crystal silicon rod The calibration related data corresponding to the rod may include but not limited to: the number of the single crystal furnace used to pull the first single crystal silicon rod, the number of the first single crystal silicon rod, the target production diameter, the target of the first single crystal silicon rod Calibration diameter, the first ratio corresponding to the first single crystal silicon rod, the number of each segment of single crystal silicon rod obtained after cutting, multiple measurement diameters at different positions on each segment of single crystal silicon rod obtained after cutting, etc.

In another optional implementation manner, corresponding to the situation that the above-mentioned polishing machine can measure the diameter of the entire first single crystal silicon rod before cutting, when adjusting the diameter of the second single crystal silicon rod, the second single crystal silicon rod Rod calibration related data may include, but is not limited to: the number of the single crystal furnace used to pull the first single crystal silicon rod, the number of the first single crystal silicon rod, the target production diameter, the target calibration of the first single crystal silicon rod diameter, the first ratio corresponding to the first single crystal silicon rod, multiple measured diameters at different positions on the whole first single crystal silicon rod before cutting, and so on.

Step 204, the diameter control system recognizes that the second single crystal silicon rod enters the shouldering stage in the single crystal furnace.

Step 205, the diameter control system reads the calibration-related data of the second single crystal silicon rod from the second table.

After the task center of the diameter control system recognizes that the second single crystal silicon rod to be drawn enters the shouldering stage in the single crystal furnace, it can read the calibration-related data of the second single crystal silicon rod from the second table.

Step 206, the diameter control system calculates the actual diameter of the first single crystal silicon rod.

The diameter control system may calculate the actual diameter of the first single crystal silicon rod based on the measured diameter of the first single crystal silicon rod.

In an optional implementation manner, corresponding to the situation that the above-mentioned polishing machine separately measures the diameter of each section of single crystal silicon rod obtained after cutting, multiple data of different positions on each section of single crystal silicon rod obtained after cutting can be obtained. Measuring the diameter, and screening the measured diameter whose difference with the target production diameter is within the preset first error range from the obtained multiple measured diameters, and determining the average value of the screened measured diameters as the selected Describe the actual diameter of the first single crystal silicon rod.

Furthermore, considering that there will be a period of compensation for the gap between the liquid and mouth at the head of the single crystal silicon rod, the diameter error in this period is relatively large, and the diameter at the tail will gradually shrink, and there is also a certain error in the diameter of this part, so the first Multiple measurement diameters at different positions on the middle section of the single crystal silicon rod after the head and tail are removed after being cut.

Under normal circumstances, after cutting the entire single crystal silicon rod to obtain the first segment of single crystal silicon rod, it can be considered that the equal-diameter head liquid gap compensation period has ended, so the first segment of single crystal silicon rod obtained after cutting can be The silicon rod is used as the head, and the part after the third segment of single crystal silicon rod obtained after cutting can be considered as the tail. Therefore, the second segment of monocrystalline silicon rod and the third segment of single crystal silicon rod obtained after being cut can be used as the middle segment after removing the head and tail. Specifically, multiple measured diameters at different positions on the second segment of the single crystal silicon rod obtained after the first single crystal silicon rod is cut and multiple measured diameters at different positions on the third segment of the single crystal silicon rod can be obtained. The second section of monocrystalline silicon rods and the third section of monocrystalline silicon rods usually cover a position with a length of about 1000mm. It has been proved by experiments that the diameter stability of about 1000mm is better, so the second section of monocrystalline silicon rods and the third section of monocrystalline silicon The accuracy of the measured diameter corresponding to the rod is higher.

In addition, if only two sections of single crystal silicon rods are obtained after the first single crystal silicon rod is cut, it may not be able to cover the position with a length of about 1000mm. In this case, the first single crystal silicon rod may not be used for diameter adjustment. It can be understood that, when the first single crystal silicon rod is cut to obtain at least 3 sections of single crystal silicon rod, the first single crystal silicon rod is used for diameter adjustment.

In another optional implementation manner, corresponding to the situation that the above-mentioned polishing machine can measure the diameter of the entire first single crystal silicon rod before cutting, multiple data of different positions on the whole first single crystal silicon rod before cutting can be obtained. measurement diameters, and from the obtained multiple measurement diameters, screen out the measurement diameters whose difference with the target production diameter is within the preset first error range, and determine the average value of the screened out measurement diameters as The actual diameter of the first single crystal silicon rod.

For the above-mentioned first error range, any applicable numerical value may be set according to actual experience, which is not limited in this embodiment of the present application.

Step 207, the diameter control system calculates the second ratio corresponding to the second single crystal silicon rod.

After calculating the actual diameter of the first single crystal silicon rod, the diameter control system adjusts the equal diameter calibration of the second single crystal silicon rod to be drawn based on the actual diameter of the first single crystal silicon rod and the preset target production diameter The target calibration diameter of .

First, the diameter control system obtains the first ratio corresponding to the first single crystal silicon rod, and calculates the second ratio based on the actual diameter of the first single crystal silicon rod, the target production diameter and the first ratio. Single crystal silicon rods correspond to the second ratio. The second scale represents the corresponding pixel value per unit length.

Optionally, the diameter control system may calculate the second ratio according to the principle that the product of the first ratio and the target production diameter is equal to the product of the second ratio and the actual diameter of the first single crystal silicon rod. Two proportions.

Specifically, according to the following formula 1:

First ratio × target production diameter = second ratio × actual diameter Formula 1

The following formula 2 can be deduced:

Second ratio = first ratio × target production diameter / actual diameter Formula 2

In step 208, the diameter control system determines whether the difference between the first ratio and the second ratio exceeds a preset second error range. If yes, go to step 209; if not, go to step 210.

Then, the diameter control system adjusts the target calibration diameter of the second single crystal silicon rod during equal diameter calibration based on the second ratio.

Optionally, the diameter control system may determine whether the difference between the first ratio and the second ratio exceeds a preset second error range. When the difference between the first ratio and the second ratio exceeds a preset second error range, adjusting the target calibration of the second single crystal silicon rod during isometric calibration based on the second ratio diameter. When the difference between the first ratio and the second ratio exceeds the preset second error range, the second single crystal silicon rod will not be temporarily adjusted based on the second ratio in the equidiameter. Target calibration diameter when calibrating.

For the above-mentioned second error range, any applicable numerical value may be set according to actual experience, which is not limited in this embodiment of the present application.

Step 209, the diameter control system generates a diameter control task.

In an optional implementation manner, when the difference between the first ratio and the second ratio exceeds the preset second error range, the diameter control system may generate the first task information, and push the first task information to Go to the taskbar of the central control system. After the controller of the central control system confirms the first task information in the task bar, the first task information is pushed to the single crystal furnace for pulling the second single crystal silicon rod through the task bar of the central control system. mission Board. The first task information may include but not limited to: the actual diameter of the first single crystal silicon rod, the second ratio corresponding to the second single crystal silicon rod, and so on.

The single crystal furnace used to pull the second single crystal silicon rod determines the product of the second ratio and the target production diameter as the second single crystal silicon rod before the second single crystal silicon rod enters the equal-diameter stage according to the first task information The target calibration diameter of the rod during equal diameter calibration, and input the target calibration diameter of the second single crystal silicon rod during equal diameter calibration, so that the diameter of the second single crystal silicon rod can be calculated based on the target calibration diameter during equal diameter calibration. Calibration, so that the actual diameter of the drawn second single crystal silicon rod is closer to the production target diameter.

In another optional implementation, when the difference between the first ratio and the second ratio exceeds the preset second error range, the diameter control system can determine the product of the second ratio and the target production diameter Calibrate the target diameter of the second monocrystalline silicon rod during equal-diameter calibration, generate second task information, and push the second task information to the task bar of the central control system. After the controller of the central control system confirms the second task information in the task bar, the second task information is pushed to the single crystal furnace for pulling the second single crystal silicon rod through the task bar of the central control system. mission Board. The second task information may include but not limited to: the actual diameter of the first single crystal silicon rod, the second ratio corresponding to the second single crystal silicon rod, the target calibration diameter of the second single crystal silicon rod during equal diameter calibration, etc. .

The single crystal furnace used to pull the second single crystal silicon rod, according to the second task information, before the second single crystal silicon rod enters the equal diameter stage, input the target calibration diameter of the second single crystal silicon rod during equal diameter calibration, In order to calibrate the diameter of the second single crystal silicon rod based on the target calibration diameter during equal diameter calibration, so that the actual diameter of the drawn second single crystal silicon rod is closer to the production target diameter.

Step 210, the diameter control system does not generate a diameter control task.

If the difference between the first ratio and the second ratio does not exceed the preset second error range, the diameter control system does not generate task information, before the second single crystal silicon rod enters the equal diameter stage , the product of the first ratio and the target production diameter is determined as the target calibration diameter of the second single crystal silicon rod during equal diameter calibration, and input the target calibration diameter of the second single crystal silicon rod during equal diameter calibration, so that During diameter calibration, the diameter of the second single crystal silicon rod is calibrated based on the target calibration diameter.

If the actual diameter is measured manually with a vernier caliper, and then the actual diameter is sent or notified to the relevant single crystal furnace by means of mail, telephone, WeChat, etc., due to individual differences and other reasons, it is difficult to guarantee the accuracy and uniformity, and the offline operation The method is not convenient for production management.

In the embodiment of the present application, the Nth single crystal silicon rod before the second single crystal silicon rod may be used as the first single crystal silicon rod. Wherein, N is a positive integer greater than or equal to 1.

In an optional embodiment, considering that after continuous diameter adjustment, the actual diameter of the previous single crystal silicon rod of the second single crystal silicon rod may be closer to the target production diameter, so in order to further improve the calculation accuracy, the The first single crystal silicon rod before the second single crystal silicon rod is used as the first single crystal silicon rod, and the actual diameter of the first single crystal silicon rod before the second single crystal silicon rod is used to calibrate the target of the second single crystal silicon rod Adjust the diameter.

In another optional embodiment, considering that the first single crystal silicon rod before the second single crystal silicon rod needs to be polished and measured, the actual value of the first single crystal silicon rod can be calculated. Therefore, in order to improve the processing efficiency and avoid the waiting time for the first single crystal silicon rod before the second single crystal silicon rod, the second single crystal silicon rod before the second single crystal silicon rod can be used as the first single crystal silicon rod The target calibration diameter of the second single crystal silicon rod is adjusted by using the actual diameter of the second single crystal silicon rod before the second single crystal silicon rod.

In the implementation of this application, the diameter of the single crystal silicon rod is measured by the polishing machine, and the measured data is uploaded to the single crystal central control database. The diameter control system will calculate the actual diameter according to the data measured by the polishing machine, and the data collected by the polishing machine The diameter data is more accurate, and the detection accuracy can reach ±0.002mm. The diameter control system calculates the second ratio through the actual diameter. If the deviation between the first ratio and the second ratio is greater than the preset error range, a task will be generated, and the task information will be pushed to the task bar of the central control system, and then pushed by the central control system to the corresponding single crystal furnace. Through the above process, the diameter control system can provide real-time feedback on the actual diameter of the drawn single crystal silicon rod, so that employees can always know the drawn diameter, adjust the diameter setting parameters to be straightened in time, and realize the single crystal furnace It can more accurately adjust the target calibration diameter, reduce the waste of roughing and the proportion of unqualified output of thinning, and reduce the production cost of the enterprise. The diameter control system can export the pushed information from the database, and through big data analysis of the pushed information, it can obtain the current overall control situation of the workshop and provide decision-making basis for future production.

Referring to FIG. 3 , it shows a structural block diagram of a device for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present disclosure.

As shown in Figure 3, the diameter adjustment device for single crystal silicon rods can include the following modules:

An acquisition module 301, configured to acquire the measured diameter of the drawn first single crystal silicon rod;

A calculation module 302, configured to calculate the actual diameter of the first single crystal silicon rod based on the measured diameter; the measured diameter is measured by a polishing machine;

The adjustment module 303 is configured to adjust the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration based on the actual diameter and the preset target production diameter.

Referring to FIG. 4 , it shows a structural block diagram of a device for adjusting the diameter of a single crystal silicon rod according to an embodiment of the present disclosure.

As shown in Figure 4, the diameter adjustment device for single crystal silicon rods can include the following modules:

An acquisition module 401, configured to acquire the measured diameter of the drawn first single crystal silicon rod;

A calculation module 402, configured to calculate the actual diameter of the first single crystal silicon rod based on the measured diameter; the measured diameter is obtained by measuring with a polishing machine;

The adjustment module 403 is configured to adjust the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration based on the actual diameter and the preset target production diameter.

Optionally, the acquiring module 401 is specifically configured to acquire a plurality of measured diameters at different positions on the first single crystal silicon rod; the calculating module 402 includes: a diameter screening unit 4021 configured to acquire Among the measured diameters, the measured diameter whose difference with the target production diameter is within the preset first error range is screened out; the diameter calculation unit 4022 is configured to determine the average value of the screened out measured diameters as the selected Describe the actual diameter of the first single crystal silicon rod.

Optionally, the acquiring module 401 is specifically configured to acquire a plurality of measured diameters at different positions on the middle section of the first single crystal silicon rod after the head and the tail are removed after being cut.

Optionally, the adjustment module 403 includes: a ratio calculation unit 4031, configured to obtain a first ratio corresponding to the first single crystal silicon rod, based on the actual diameter, the target production diameter and the first ratio Calculating a second ratio corresponding to the second single crystal silicon rod, the first ratio and the second ratio both represent the corresponding pixel value per unit length; the diameter adjustment unit 4032 is configured to adjust the second ratio based on the second ratio The target calibration diameter of the second single crystal silicon rod during equal diameter calibration.

Optionally, the ratio calculating unit 4031 is specifically configured to calculate the second ratio according to the principle that the product of the first ratio and the target production diameter is equal to the product of the second ratio and the actual diameter. Proportion.

Optionally, the diameter adjusting unit 4032 is specifically configured to adjust the diameter based on the second ratio when the difference between the first ratio and the second ratio exceeds a preset second error range. The target calibration diameter of the second single crystal silicon rod during equal diameter calibration.

Optionally, the diameter adjustment unit 4032 includes: a first pushing subunit, configured to generate first task information including the second ratio, and push the first task information to the second subunit for pulling the second ratio. A single crystal furnace for a single crystal silicon rod, so that the single crystal furnace determines the product of the second ratio and the target production diameter as the target calibration diameter of the second single crystal silicon rod during equal diameter calibration .

Optionally, the diameter adjustment unit 4032 includes: a second pushing subunit, configured to determine the product of the second ratio and the target production diameter as the value of the second single crystal silicon rod during equal-diameter calibration. the target calibration diameter; generate second task information including the target calibration diameter, and push the second task information to a single crystal furnace for pulling the second single crystal silicon rod.

Optionally, the obtaining module 401 is specifically configured to use the Nth single crystal silicon rod before the second single crystal silicon rod as the first single crystal silicon rod, and obtain the Measure the diameter; where, N is a positive integer greater than or equal to 1.

As for the device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and for related parts, please refer to the part of the description of the method embodiment.

In the embodiment of the present application, an electronic device is also provided. The electronic device may include one or more processors and one or more computer-readable storage media having instructions, such as application programs, stored thereon. When the instructions are executed by the one or more processors, the processors are made to execute the method for adjusting the diameter of a silicon single crystal rod in any of the above embodiments.

Referring to FIG. 5 , it shows a schematic diagram of a structure of an electronic device according to an embodiment of the present application. As shown in FIG. 5 , the electronic device includes a processor 501 , a communication interface 502 , a memory 503 and a communication bus 504 . Wherein, the processor 501 , the communication interface 502 , and the memory 503 communicate with each other through the communication bus 504 .

The memory 503 is used to store computer programs.

The processor 501 is configured to implement the method for adjusting the diameter of a single crystal silicon rod in any of the above-mentioned embodiments when executing the program stored in the memory 503 .

The communication interface 502 is used for communication between the terminal and other devices.

The communication bus 504 mentioned above may be a Peripheral Component Interconnect (PCI for short) bus or an Extended Industry Standard Architecture (EISA for short) bus or the like. The communication bus can be divided into an address bus, a data bus, a control bus, and the like. For ease of representation, only one thick line is used in the figure, but it does not mean that there is only one bus or one type of bus.

The processor 501 mentioned above may include but not limited to: a central processing unit (Central Processing Unit, referred to as CPU), a network processor (Network Processor, referred to as NP), a digital signal processor (Digital Signal Processing, referred to as DSP), dedicated Integrated Circuit (Application Specific Integrated Circuit, referred to as ASIC), Field-Programmable Gate Array (Field-Programmable Gate Array, referred to as FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc.

The memory 503 mentioned above may include but not limited to: read-only memory (Read Only Memory, ROM for short), random access memory (Random Access Memory, RAM for short), compact disc read-only memory (Compact Disc Read Only Memory, short for CD-ROM), Electronic Erasable Programmable Read Only Memory (EEPROM for short), hard disk, floppy disk, flash memory, etc.

In an embodiment of the present application, there is also provided a computer-readable storage medium, on which a computer program is stored, and the program can be executed by a processor of an electronic device. When the computer program is executed by the processor, the The processor executes the method for adjusting the diameter of a single crystal silicon rod as described in any one of the above embodiments.

Each embodiment in this specification is described in a progressive manner, each embodiment focuses on the difference from other embodiments, and the same and similar parts of each embodiment can be referred to each other.

It should be noted that in this article, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is a relationship between these entities or operations. There is no such actual relationship or order between them. Furthermore, the term "comprises", "comprises" or any other variation thereof is intended to cover a non-exclusive inclusion such that a process, method, article, or terminal equipment comprising a set of elements includes not only those elements, but also includes elements not expressly listed. other elements identified, or also include elements inherent in such a process, method, article, or terminal equipment. Without further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article or terminal device comprising said element.

Through the description of the above embodiments, those skilled in the art can clearly understand that the methods of the above embodiments can be implemented by means of software plus a necessary general-purpose hardware platform, and of course also by hardware, but in many cases the former is better implementation. Based on such an understanding, the technical solution of the present application can be embodied in the form of a software product in essence or the part that contributes to the prior art, and the computer software product is stored in a storage medium (such as ROM, RAM, disk, CD) contains several instructions to enable a terminal (which may be a mobile phone, a computer, a server, an air conditioner, or a network device, etc.) to execute the methods described in various embodiments of the present application.

The embodiments of the present application have been described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementations. The above-mentioned specific implementations are only illustrative and not restrictive. Those of ordinary skill in the art will Under the inspiration of this application, without departing from the purpose of this application and the scope of protection of the claims, many forms can also be made, all of which belong to the protection of this application.

Those skilled in the art can appreciate that the units and algorithm steps of the examples described in conjunction with the embodiments disclosed in the embodiments of the present application can be implemented by electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are executed by hardware or software depends on the specific application and design constraints of the technical solution. Skilled artisans may use different methods to implement the described functions for each specific application, but such implementation should not be regarded as exceeding the scope of the present application.

Those skilled in the art can clearly understand that for the convenience and brevity of the description, the specific working process of the above-described system, device and unit can refer to the corresponding process in the foregoing method embodiment, which will not be repeated here.

In the embodiments provided in this application, it should be understood that the disclosed devices and methods may be implemented in other ways. For example, the device embodiments described above are only illustrative. For example, the division of the units is only a logical function division. In actual implementation, there may be other division methods. For example, multiple units or components can be combined or May be integrated into another system, or some features may be ignored, or not implemented. In another point, the mutual coupling or direct coupling or communication connection shown or discussed may be through some interfaces, and the indirect coupling or communication connection of devices or units may be in electrical, mechanical or other forms.

The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place, or may be distributed to multiple network units. Part or all of the units can be selected according to actual needs to achieve the purpose of the solution of this embodiment.

In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, each unit may exist separately physically, or two or more units may be integrated into one unit.

If the functions described above are realized in the form of software function units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or the part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including Several instructions are used to make a computer device (which may be a personal computer, a server, or a network device, etc.) execute all or part of the steps of the methods described in the various embodiments of the present application. The aforementioned storage medium includes: various media capable of storing program codes such as U disk, mobile hard disk, ROM, RAM, magnetic disk or optical disk.

The above is only a specific implementation of the application, but the scope of protection of the application is not limited thereto. Anyone familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the application. Should be covered within the protection scope of this application. To sum up, the contents of this specification should not be understood as limiting the application.

Claims

A method for adjusting the diameter of a single crystal silicon rod, characterized in that the method comprises:

Obtaining the measured diameter of the drawn first silicon single crystal rod, and calculating the actual diameter of the first single crystal silicon rod based on the measured diameter; the measured diameter is obtained by measuring with a polishing machine;

Based on the actual diameter and the preset target production diameter, the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration is adjusted.
The method according to claim 1, characterized in that,

The obtaining the measured diameter of the drawn first single crystal silicon rod includes: obtaining multiple measured diameters at different positions on the first single crystal silicon rod;

The calculating the actual diameter of the first single crystal silicon rod based on the measured diameter includes:

From the plurality of measured diameters, screening out the measured diameters whose difference from the target production diameter is within a preset first error range;

The average value of the screened measured diameters is determined as the actual diameter of the first single crystal silicon rod.
The method according to claim 2, wherein the obtaining multiple measured diameters at different positions on the first single crystal silicon rod comprises:

A plurality of measured diameters at different positions on the middle section of the first single crystal silicon rod after the head and the tail are removed after being cut are obtained.
The method according to claim 1, characterized in that, based on the actual diameter and the preset target production diameter, adjusting the target calibration diameter of the second single crystal silicon rod to be drawn during equal-diameter calibration includes: :

Obtaining a first ratio corresponding to the first single crystal silicon rod, and calculating a second ratio corresponding to the second single crystal silicon rod based on the actual diameter, the target production diameter and the first ratio; Both the first ratio and the second ratio represent pixel values corresponding to each unit length;

The target calibration diameter of the second single crystal silicon rod during equal diameter calibration is adjusted based on the second ratio.
The method according to claim 4, wherein the calculation of the second ratio corresponding to the second single crystal silicon rod based on the actual diameter, the target production diameter and the first ratio includes:

According to the principle that the product of the first ratio and the target production diameter is equal to the product of the second ratio and the actual diameter, the second ratio is calculated.
The method according to claim 4, wherein the adjusting the target calibration diameter of the second single crystal silicon rod during equal-diameter calibration based on the second ratio comprises:

When the difference between the first ratio and the second ratio exceeds a preset second error range, adjusting the target calibration of the second single crystal silicon rod during isometric calibration based on the second ratio diameter.
The method according to claim 4, wherein the adjusting the target calibration diameter of the second single crystal silicon rod during equal-diameter calibration based on the second ratio comprises:

generating first task information including the second ratio, and pushing the first task information to a single crystal furnace for pulling the second single crystal silicon rod, so that the single crystal furnace The product of the two ratios and the target production diameter is determined as the target calibration diameter of the second single crystal silicon rod during equal diameter calibration.
The method according to claim 4, wherein the adjusting the target calibration diameter of the second single crystal silicon rod during equal-diameter calibration based on the second ratio comprises:

The product of the second ratio and the target production diameter is determined as the target calibration diameter of the second single crystal silicon rod during equal-diameter calibration;

generating second task information including the target calibration diameter, and pushing the second task information to a single crystal furnace for pulling the second single crystal silicon rod.
The method according to claim 1, wherein said obtaining the measured diameter of the drawn first single crystal silicon rod comprises:

Taking the Nth single crystal silicon rod before the second single crystal silicon rod as the first single crystal silicon rod, and obtaining the measured diameter of the first single crystal silicon rod; wherein, N is a positive integer greater than or equal to 1 .
A device for adjusting the diameter of a single crystal silicon rod, characterized in that the device comprises:

An acquisition module, configured to acquire the measured diameter of the drawn first single crystal silicon rod;

a calculation module, configured to calculate the actual diameter of the first single crystal silicon rod based on the measured diameter; the measured diameter is obtained by measuring the polishing machine;

The adjustment module is configured to adjust the target calibration diameter of the second single crystal silicon rod to be drawn during equal diameter calibration based on the actual diameter and the preset target production diameter.
An electronic device, characterized in that it comprises:

one or more processors; and

one or more computer-readable storage media having instructions stored thereon;

When the instructions are executed by the one or more processors, the processors are made to execute the method for adjusting the diameter of a silicon single crystal rod according to any one of claims 1-9.
A computer-readable storage medium, characterized in that a computer program is stored thereon, and when the computer program is executed by a processor, the processor executes the single crystal Diameter adjustment method of silicon rod.