CN107832346B - Grading method for purifying ingot core - Google Patents
Grading method for purifying ingot core Download PDFInfo
- Publication number
- CN107832346B CN107832346B CN201710961176.7A CN201710961176A CN107832346B CN 107832346 B CN107832346 B CN 107832346B CN 201710961176 A CN201710961176 A CN 201710961176A CN 107832346 B CN107832346 B CN 107832346B
- Authority
- CN
- China
- Prior art keywords
- resistivity
- grading
- ingot core
- purified
- purified ingot
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F16/00—Information retrieval; Database structures therefor; File system structures therefor
- G06F16/20—Information retrieval; Database structures therefor; File system structures therefor of structured data, e.g. relational data
- G06F16/24—Querying
- G06F16/245—Query processing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Theoretical Computer Science (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Computational Linguistics (AREA)
- Data Mining & Analysis (AREA)
- Databases & Information Systems (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Developing Agents For Electrophotography (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a grading method for purifying ingot cores, which comprises the following steps: testing the resistivity of two positions on the purified ingot core to obtain the bottom resistivity and the top resistivity of the purified ingot core, and calculating the difference between the bottom resistivity and the top resistivity to obtain the bottom and top resistivity difference of the purified ingot core; and inquiring a preset purified ingot core grading data table according to the obtained difference value of the bottom resistivity and the bottom top resistivity to obtain the grading grade of the tested purified ingot core, wherein the purified ingot core grading data table comprises the bottom resistivity, the difference value of the bottom resistivity and the top resistivity and the mapping relation between the corresponding grading grades. The grading method can simplify the complex calculation and test process, can scientifically, systematically, simply and effectively grade the purified ingot core, has the advantages of simplicity, accuracy and the like, and has great significance for grading the purified ingot core and controlling the phosphorus content in the ingot casting process.
Description
Technical Field
The invention belongs to the field of crystalline silicon ingot casting, and relates to a grading method for purifying an ingot core, in particular to a grading method for purifying the ingot core based on phosphorus content.
Background
In the production process of the polycrystalline silicon ingot, a purified ingot core is often used as a part of raw materials, wherein the occupied amount proportion of the purified ingot core is 20-40%. The purified ingot core is mainly obtained by ingot casting of poor silicon materials such as ingot casting circulating materials, poor silicon materials and the like. Since the polycrystalline silicon feedstock produced by the prior art methods inevitably contains phosphorus impurities, particularly in the current mainstream siemens process, such problems are also present, and the purified ingot core usually contains a higher concentration of phosphorus. Phosphorus, which is a donor impurity in the silicon ingot, directly changes the electrical properties of the silicon ingot, even changes the P/N type of the silicon ingot, and has a great influence on the quality of the silicon ingot. In addition, due to the ingot casting process, the content of phosphorus and boron impurities in the purified ingot core cannot be accurately controlled, and when the purified ingot core is used as a raw material of a normal silicon ingot, the resistivity of the silicon ingot fluctuates, so that the product quality is influenced, and even the product is scrapped. However, in the prior art, since there is no scientific systematic analysis method and calculation method, the content of donor acceptor (i.e. phosphorus and boron) impurities in the purified ingot core cannot be effectively and accurately obtained, and simultaneously, the purified ingot core cannot be classified scientifically, systematically, simply and effectively. Therefore, how to obtain a simple and accurate ingot core purification grading method has great significance for accurate and effective control of phosphorus content in the polycrystalline ingot casting process.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a simple and accurate ingot core purification grading method.
In order to solve the technical problems, the invention adopts the following technical scheme:
a grading method for purifying ingot cores comprises the following steps:
s1, testing the resistivity of two positions on the purified ingot core to obtain the bottom resistivity and the top resistivity of the purified ingot core, and calculating the difference between the bottom resistivity and the top resistivity to obtain the bottom and top resistivity difference of the purified ingot core;
s2, inquiring a preset purified ingot core grading data table to obtain the grading grade of the tested purified ingot core according to the obtained difference value of the bottom resistivity and the bottom top resistivity; the purified ingot core grading data table comprises a mapping relation between bottom resistivity and a difference value of bottom and top resistivity and corresponding grading grades.
In the foregoing grading method, in a further improvement, in step S2, the step of querying the preset purified ingot core grading data table to obtain the grading grade of the tested purified ingot core includes the specific steps of:
s2-1, inquiring a preset purified ingot core grading data table according to the bottom resistivity obtained in the step S1, and determining a bottom resistivity value interval M corresponding to the bottom resistivity obtained in the step S1;
s2-2, inquiring a preset purified ingot core grading data table according to the bottom and top resistivity difference obtained in the step S1, and determining a bottom and top resistivity difference interval N corresponding to the bottom and top resistivity difference obtained in the step S1;
s2-3, inquiring a preset purified ingot core grading data table according to the bottom resistivity difference interval M and the bottom top resistivity difference interval N to obtain the grading grade TC of the tested purified ingot core.
In the foregoing grading method, further improved, in the purified ingot core grading data table, the bottom resistivity is divided into 8 bottom resistivity value intervals, which are: m1 is less than or equal to 0.8, M2 is more than or equal to 0.8 and less than or equal to 1, M3 is more than or equal to 1 and less than or equal to 1.3, M4 is more than or equal to 1.3 and less than or equal to 1.6, M5 is more than or equal to 1.9, M6 is more than or equal to 1.9 and less than or equal to 2.2, M7 is more than or equal to 2.5, and M8 is more than or equal to 2.;
when the bottom resistivity value interval is M1, the corresponding bottom-top resistivity difference is divided into 5 bottom-top resistivity difference intervals, which are respectively: n11< -0.1, -N12 is more than or equal to 0.1 and less than or equal to 0.05, N13 is more than or equal to 0.05, N14 is more than or equal to 0.12 and less than or equal to 0.2, and N15 is more than or equal to 0.2, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N11, N12, N13, N14 and N15 are TC6, TC5, TC4, TC3 and TC2 respectively;
when the bottom resistivity value interval is M2, the corresponding bottom-top resistivity difference is divided into 5 bottom-top resistivity difference intervals, which are respectively: n21< -0.4, -0.4-N22 < -0.05, -0.05-N23 < 0.1, 0.1-N24-0.2 and 0.2-N25, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N21, N22, N23, N24 and N25 are TC6, TC5, TC4, TC3 and TC2 respectively;
when the bottom resistivity value interval is M3, the corresponding bottom-top resistivity difference is divided into 5 bottom-top resistivity difference intervals, which are respectively: n32< -0.35, -0.35-N33 <0, 0-N34 < 0.2, 0.2-N35 < 0.35 and 0.35 < N36, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N32, N33, N34, N35 and N36 are TC5, TC4, TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M4, the corresponding bottom-top resistivity difference is divided into 4 bottom-top resistivity difference intervals, which are respectively: n43< -0.3, -0.3-N44 < 0.15, 0.15-N45-0.4 and 0.4-N46, wherein the grading grades of the purified ingot cores corresponding to the bottom and top resistivity difference intervals N43, N44, N45 and N46 are TC4, TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M5, the corresponding bottom-top resistivity difference is divided into 4 bottom-top resistivity difference intervals, which are respectively: n53< -0.9, -0.9-N54 <0, 0-N55-0.45 and 0.45-N56, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N53, N54, N55 and N56 are TC4, TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M6, the corresponding bottom-top resistivity difference is divided into 3 bottom-top resistivity difference intervals, which are respectively: n64< -0.2, -0.2-N65-0.5 and 0.5-N66, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N64, N65 and N66 are TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M7, the corresponding bottom-top resistivity difference is divided into 3 bottom-top resistivity difference intervals, which are respectively: n74< -0.5, -0.5-N75-0.55 and 0.55-N76, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N74, N75 and N76 are TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M8, the corresponding bottom-top resistivity difference is divided into 3 bottom-top resistivity difference intervals, which are respectively: n84< -0.8, -0.8-N85-0.6 and 0.6-N86, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N84, N85 and N86 are TC3, TC2 and TC1 respectively.
In the foregoing grading method, it is further improved that, in the purified ingot core grading data table, when the grading grade is TC1, the phosphorus content in the corresponding purified ingot core is P1, where P1<1.5×1015atoms/cm3；
When the grading grade is TC2, the phosphorus content in the corresponding purified ingot core is P2, wherein the phosphorus content is 1.5 multiplied by 1015atoms/cm3≤P2＜4.5×1015atoms/cm3；
When the grading grade is TC3, the phosphorus content in the corresponding purified ingot core is P3, wherein the phosphorus content is 4.5 multiplied by 1015atoms/cm3≤P3＜7.5×1015atoms/cm3；
When the grading grade is TC4, the phosphorus content in the corresponding purified ingot core is P4, wherein the phosphorus content is 7.5 multiplied by 1015atoms/cm3≤P4＜10.5×1015atoms/cm3；
When the grading grade is TC5, the phosphorus content in the corresponding purified ingot core is P5, wherein the phosphorus content is 10.5 multiplied by 1015atoms/cm3≤P5＜13.5×1015atoms/cm3；
When the grading grade is TC6, the phosphorus content in the corresponding purified ingot core is P6, wherein P6 is more than or equal to 13.5 multiplied by 1015atoms/cm3。
In the above grading method, in a further improvement, in step S2, the establishing of the purified ingot core grading data table includes the following steps:
(1) dividing the bottom resistivity to form a plurality of bottom resistivity value intervals M;
(2) respectively corresponding each bottom resistivity value interval M obtained in the step (1) to a bottom and top resistivity difference value;
(3) dividing each bottom and top resistivity difference value obtained in the step (2) to form a plurality of bottom and top resistivity difference value intervals N corresponding to the bottom resistivity value intervals M;
(4) and (4) respectively corresponding each bottom and top resistivity difference interval N obtained in the step (3) to the grading grade TC of the purified ingot core to obtain a purified ingot core grading data table.
In the above-mentioned grading method, further improved, in step S1, when the resistivity of the bottom of the purified ingot core is obtained, the resistivity of the bottom a of the purified ingot core is tested; the position A of the bottom of the purified ingot core is 1 cm-3 cm away from the bottom surface of the purified ingot core.
In the above-mentioned grading method, further improved, in step S1, when the resistivity of the bottom of the purified ingot core is obtained, the resistivity at a distance of 2cm from the bottom surface of the purified ingot core is tested.
In the above-mentioned grading method, further modified, in step S1, when the top resistivity of the purified ingot core is obtained, the resistivity at a distance of B mm from the top surface of the purified ingot core is tested, where B is the height value/10 of the purified ingot core.
In the above grading method, further modified, in step S1, the bottom P/N type of the purified ingot core is P type.
Compared with the prior art, the invention has the advantages that:
1. the invention provides a grading method for purifying an ingot core, which is characterized in that a preset purified ingot core grading data table is inquired according to the difference value of the bottom resistivity and the bottom top resistivity of the purified ingot core to be tested to obtain the grading grade of the purified ingot core to be tested. The method can simplify the complex calculation and test process, can scientifically, systematically, simply and effectively grade the purified ingot core, has the advantages of simplicity, accuracy and the like, and has great significance for grading the purified ingot core and controlling the phosphorus content in the ingot casting process.
2. When the ingot core is provided as the raw material of the normal silicon ingot after being graded by the method, the P content in the product can be accurately controlled, the quality of the silicon ingot is ensured, the product quality problem caused by the over-standard P content can be avoided, the product scrapping problem can be avoided, and a good effect is achieved in the actual production.
Drawings
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention.
FIG. 1 is a schematic view showing the division of a purified ingot core in example 1 of the present invention.
FIG. 2 is a schematic view of the purified ingot core in example 1 of the present invention.
Detailed Description
The invention is further described below with reference to the drawings and specific preferred embodiments of the description, without thereby limiting the scope of protection of the invention.
The starting materials and equipment used in the following examples are commercially available. In the following examples, unless otherwise specified, the data obtained are the average of three or more repeated experiments.
Example 1
A grading method for purifying ingot cores comprises the following steps:
(1) silicon materials such as ingot recycle materials, defective silicon materials and the like are cast into ingots, and then are divided into 25 purified ingot cores as shown in fig. 1, wherein the size of each purified ingot core is 156mm × 156mm × 340mm (length × width × height).
(2) Carrying out resistivity test on the purified ingot core C8 obtained in the step (1), wherein the specific test positions are shown in figure 2, and specifically comprise the following steps: measuring the resistivity at a position 2cm away from the bottom surface of the purified ingot core (the P/N type at the position is P type), and obtaining the bottom resistivity which is 1.2 omega cm; the resistivity at a distance of B mm from the top surface of the purified ingot core was measured to obtain a top resistivity of 1.3 Ω · cm, where B is the purified ingot core height value/10 and the purified ingot core height is 340mm, i.e., B is 34. The difference between the bottom resistivity and the top resistivity was calculated to obtain a bottom-top resistivity difference for the purified ingot core of-0.1. In the invention, one end which is firstly solidified in the solidification process is used as a bottom, and the corresponding end surface is used as a bottom surface; accordingly, the later solidified end serves as a top portion, and the corresponding end surface thereof serves as a top surface, as shown in fig. 2.
(3) Inquiring a preset purified ingot core grading data table (shown in table 1) to obtain the grading grade of the tested purified ingot core according to the difference value of the bottom resistivity and the bottom top resistivity obtained in the step (2), wherein the step specifically comprises the following steps:
(3.1) inquiring a preset purified ingot core grading data table according to the bottom resistivity obtained in the step (2) being 1.2 omega cm, and determining a bottom resistivity value interval M3 corresponding to the bottom resistivity obtained in the step (2), namely the bottom resistivity obtained in the step (2) is in the range of the bottom resistivity value interval [1, 1.3).
(3.2) inquiring a preset purified ingot core grading data table according to the bottom and top resistivity difference value obtained in the step (2) being-0.1, and determining a bottom and top resistivity difference value interval N33 corresponding to the bottom and top resistivity difference value obtained in the step (2), namely, the bottom and top resistivity difference value obtained in the step (2) is in the range of a bottom and top resistivity difference value interval [0, 0.2).
(3.3) inquiring a preset purified ingot core grading data table according to the bottom resistivity difference interval M3 determined in the step (3.1) and the bottom top resistivity difference interval N33 determined in the step (3.2) to obtain the grading grade of the purified ingot core in the step (2) as TC4, namely the grading grade of the purified ingot core in the embodiment is TC 4. As can be seen from Table 2, the concentration of phosphorus in the core of the purified ingot classified as TC4 was 7.5X 1015atoms/cm3≤P4＜10.5×1015atoms/cm3Within the range.
In the step (3), the main theoretical basis for establishing the purified ingot core grading data table is a formula (1) and a formula (2).
In the formula (1), CSThe concentration of impurities (atoms/cm) in the solid phase at the solid-liquid interface when the solidification height is h3)，KeffIs the effective segregation coefficient of impurities in the silicon melt, C0Is the original concentration of impurities (atoms/cm) in the silicon melt3) And H is the height (m) of the liquid level of the silicon melt.
In the formula (2), ρ is the resistivity (Ω · cm), C, of the purified ingot coreSFor purifying the impurity concentration (atoms/cm) in the ingot core3) E is the electron charge, u is the mobility of an electron or hole, wherein the mobility of an electron is 1350cm2V.s.the mobility of holes was 480cm2/(V·s)。
After measuring the resistivity of two positions on the purified ingot core, the phosphorus content and the boron content in the purified ingot core are calculated by the formulas (1) and (2).
In the step (3), the establishment of the purified ingot core grading data table comprises the following steps:
(a) respectively carrying out resistivity tests on the bottom and the top of the purified ingot core to obtain the bottom resistivity and the top resistivity of each purified ingot core to be tested, and calculating the difference between the bottom resistivity and the top resistivity to obtain the difference between the bottom resistivity and the top resistivity of each purified ingot core;
(b) dividing the bottom resistivity obtained in the step (a) to form a plurality of bottom resistivity value intervals M;
(c) respectively corresponding each bottom resistivity value interval M obtained in the step (b) to a bottom and top resistivity difference value;
(d) dividing each bottom and top resistivity difference value obtained in the step (c) to form a plurality of bottom and top resistivity difference value intervals N corresponding to the bottom resistivity value interval M;
(e) and (d) respectively corresponding each bottom-top resistivity difference interval N obtained in the step (d) to the grading grade TC of the purified ingot core to obtain a purified ingot core grading data table, wherein the purified ingot core grading data table is shown in a table 1.
TABLE 1 grading data of purified ingot cores of the present invention
In table 1, the bottom resistivity is divided into 8 bottom resistivity value intervals, which are: m1 is less than or equal to 0.8, M2 is more than or equal to 0.8 and less than or equal to 1, M3 is more than or equal to 1 and less than or equal to 1.3, M4 is more than or equal to 1.3 and less than or equal to 1.6, M5 is more than or equal to 1.9, M6 is more than or equal to 1.9 and less than or equal to 2.2, M7 is more than or equal to 2.5, and M8 is more than or equal to 2..
In table 1, when the bottom resistivity interval is M1, the corresponding bottom-to-top resistivity difference is divided into 5 bottom-to-top resistivity difference intervals, which are: n11< -0.1, -N12 is more than or equal to 0.1 and less than 0.05, N13 is more than or equal to 0.05 and less than or equal to 0.12, N14 is more than or equal to 0.2 and N15 are more than 0.2, wherein the grading grades of the purified ingot cores corresponding to bottom top resistivity difference intervals N11, N12, N13, N14 and N15 are TC6, TC5, TC4, TC3 and TC2 respectively.
In table 1, when the bottom resistivity interval is M2, the corresponding bottom-to-top resistivity difference is divided into 5 bottom-to-top resistivity difference intervals, which are: n21< -0.4, -0.4-N22 < -0.05, -0.05-N23 < 0.1, 0.1-N24-0.2 and 0.2-N25, wherein the grading grades of the purified ingot cores corresponding to bottom top resistivity difference intervals N21, N22, N23, N24 and N25 are TC6, TC5, TC4, TC3 and TC2 respectively.
In table 1, when the bottom resistivity interval is M3, the corresponding bottom-to-top resistivity difference is divided into 5 bottom-to-top resistivity difference intervals, which are: n32< -0.35, -0.35-N33 <0, 0-N34 < 0.2, 0.2-N35 < 0.35 and 0.35 < N36, wherein the grading grades of the purified ingot cores corresponding to bottom top resistivity difference intervals N32, N33, N34, N35 and N36 are TC5, TC4, TC3, TC2 and TC1 respectively.
In table 1, when the bottom resistivity interval is M4, the corresponding bottom-to-top resistivity difference is divided into 4 bottom-to-top resistivity difference intervals, which are: n43< -0.3, -0.3-N44 < 0.15, 0.15-N45-0.4 and 0.4-N46, wherein the grading grades of the purified ingot cores corresponding to bottom and top resistivity difference intervals N43, N44, N45 and N46 are TC4, TC3, TC2 and TC1 respectively.
In table 1, when the bottom resistivity interval M is M5, the corresponding bottom-to-top resistivity difference is divided into 4 bottom-to-top resistivity difference intervals, which are: n53< -0.9, -0.9-N54 <0, 0-N55-0.45 and 0.45-N56, wherein the grading grades of the purified ingot cores corresponding to bottom top resistivity difference intervals N53, N54, N55 and N56 are TC4, TC3, TC2 and TC1 respectively.
In table 1, when the bottom resistivity interval is M6, the corresponding bottom-to-top resistivity difference is divided into 3 bottom-to-top resistivity difference intervals, which are: n64< -0.2, -0.2-N65-0.5 and 0.5-N66, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N64, N65 and N66 are TC3, TC2 and TC1 respectively.
In table 1, when the bottom resistivity interval is M7, the corresponding bottom-to-top resistivity difference is divided into 3 bottom-to-top resistivity difference intervals, which are: n74< -0.5, -0.5-N75-0.55 and 0.55-N76, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N74, N75 and N76 are TC3, TC2 and TC1 respectively.
In table 1, when the bottom resistivity interval is M8, the corresponding bottom-to-top resistivity difference is divided into 3 bottom-to-top resistivity difference intervals, which are: n84< -0.8, -0.8-N85-0.6 and 0.6-N86, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N84, N85 and N86 are TC3, TC2 and TC1 respectively.
TABLE 2 comparison data of grade and phosphorus concentration of purified ingot core in the present invention
| Grading level | Concentration of P element (10)15atoms/cm3) |
| TC1 | (0,1.5) |
| TC2 | [1.5,4.5) |
| TC3 | [4.5,7.5) |
| TC4 | [7.5,10.5) |
| TC5 | [10.5,13.5) |
| TC6 | [13.5,+∞) |
The purified ingot cores graded by the grading method are used as raw materials, the polycrystalline silicon ingots are produced in a mass mode, mass production verification of the polycrystalline silicon ingots shows that the mass production of the polycrystalline silicon ingots basically has no product quality problem caused by the over-standard phosphorus content, and the qualified rate of the product resistivity reaches 99.8%.
The above examples are merely preferred embodiments of the present invention, and the scope of the present invention is not limited to the above examples. All technical schemes belonging to the idea of the invention belong to the protection scope of the invention. It should be noted that modifications and embellishments within the scope of the invention may be made by those skilled in the art without departing from the principle of the invention, and such modifications and embellishments should also be considered as within the scope of the invention.
Claims (7)
1. A grading method for purifying ingot cores is characterized by comprising the following steps:
s1, testing the resistivity of two positions on the purified ingot core to obtain the bottom resistivity and the top resistivity of the purified ingot core, and calculating the difference between the bottom resistivity and the top resistivity to obtain the bottom and top resistivity difference of the purified ingot core;
s2, inquiring a preset purified ingot core grading data table to obtain the grading grade of the tested purified ingot core according to the obtained difference value of the bottom resistivity and the bottom top resistivity; the purified ingot core grading data table comprises a mapping relation between bottom resistivity and a difference value of bottom and top resistivity and corresponding grading grades;
in step S2, a preset purified ingot core grading data table is queried to obtain the grading grade of the tested purified ingot core, and the specific steps include:
s2-1, inquiring a preset purified ingot core grading data table according to the bottom resistivity obtained in the step S1, and determining a bottom resistivity value interval M corresponding to the bottom resistivity obtained in the step S1;
s2-2, inquiring a preset purified ingot core grading data table according to the bottom and top resistivity difference obtained in the step S1, and determining a bottom and top resistivity difference interval N corresponding to the bottom and top resistivity difference obtained in the step S1;
s2-3, inquiring a preset purified ingot core grading data table according to the bottom resistivity difference interval M and the bottom top resistivity difference interval N to obtain the grading grade TC of the tested purified ingot core;
in step S2, the establishing of the purified ingot core grading data table includes the following steps:
(1) dividing the bottom resistivity to form a plurality of bottom resistivity value intervals M;
(2) respectively corresponding each bottom resistivity value interval M obtained in the step (1) to a bottom and top resistivity difference value;
(3) dividing each bottom and top resistivity difference value obtained in the step (2) to form a plurality of bottom and top resistivity difference value intervals N corresponding to the bottom resistivity value intervals M;
(4) and (4) respectively corresponding each bottom and top resistivity difference interval N obtained in the step (3) to the grading grade TC of the purified ingot core to obtain a purified ingot core grading data table.
2. The grading method according to claim 1, wherein in the purified ingot core grading data table, the bottom resistivity is divided into 8 bottom resistivity value intervals, which are respectively: m1 is less than or equal to 0.8, M2 is more than or equal to 0.8 and less than or equal to 1, M3 is more than or equal to 1 and less than or equal to 1.3, M4 is more than or equal to 1.3 and less than or equal to 1.6, M5 is more than or equal to 1.9, M6 is more than or equal to 1.9 and less than or equal to 2.2, M7 is more than or equal to 2.5, and M8 is more than or equal to 2.;
when the bottom resistivity value interval is M1, the corresponding bottom-top resistivity difference is divided into 5 bottom-top resistivity difference intervals, which are respectively: n11< -0.1, -N12 is more than or equal to 0.1 and less than or equal to 0.05, N13 is more than or equal to 0.05, N14 is more than or equal to 0.12 and less than or equal to 0.2, and N15 is more than or equal to 0.2, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N11, N12, N13, N14 and N15 are TC6, TC5, TC4, TC3 and TC2 respectively;
when the bottom resistivity value interval is M2, the corresponding bottom-top resistivity difference is divided into 5 bottom-top resistivity difference intervals, which are respectively: n21< -0.4, -0.4-N22 < -0.05, -0.05-N23 < 0.1, 0.1-N24-0.2 and 0.2-N25, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N21, N22, N23, N24 and N25 are TC6, TC5, TC4, TC3 and TC2 respectively;
when the bottom resistivity value interval is M3, the corresponding bottom-top resistivity difference is divided into 5 bottom-top resistivity difference intervals, which are respectively: n32< -0.35, -0.35-N33 <0, 0-N34 < 0.2, 0.2-N35 < 0.35 and 0.35 < N36, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N32, N33, N34, N35 and N36 are TC5, TC4, TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M4, the corresponding bottom-top resistivity difference is divided into 4 bottom-top resistivity difference intervals, which are respectively: n43< -0.3, -0.3-N44 < 0.15, 0.15-N45-0.4 and 0.4-N46, wherein the grading grades of the purified ingot cores corresponding to the bottom and top resistivity difference intervals N43, N44, N45 and N46 are TC4, TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M5, the corresponding bottom-top resistivity difference is divided into 4 bottom-top resistivity difference intervals, which are respectively: n53< -0.9, -0.9-N54 <0, 0-N55-0.45 and 0.45-N56, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N53, N54, N55 and N56 are TC4, TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M6, the corresponding bottom-top resistivity difference is divided into 3 bottom-top resistivity difference intervals, which are respectively: n64< -0.2, -0.2-N65-0.5 and 0.5-N66, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N64, N65 and N66 are TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M7, the corresponding bottom-top resistivity difference is divided into 3 bottom-top resistivity difference intervals, which are respectively: n74< -0.5, -0.5-N75-0.55 and 0.55-N76, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N74, N75 and N76 are TC3, TC2 and TC1 respectively;
when the bottom resistivity value interval is M8, the corresponding bottom-top resistivity difference is divided into 3 bottom-top resistivity difference intervals, which are respectively: n84< -0.8, -0.8-N85-0.6 and 0.6-N86, wherein the grading grades of the purified ingot cores corresponding to the bottom top resistivity difference intervals N84, N85 and N86 are TC3, TC2 and TC1 respectively.
3. The grading of claim 2The method is characterized in that when the grading grade is TC1 in the purified ingot core grading data table, the corresponding phosphorus content in the purified ingot core is P1, wherein P1<1.5×1015 atoms/cm3；
When the grading grade is TC2, the phosphorus content in the corresponding purified ingot core is P2, wherein the phosphorus content is 1.5 multiplied by 1015 atoms/cm3 ≤P2＜4.5×1015 atoms/cm3；
When the grading grade is TC3, the phosphorus content in the corresponding purified ingot core is P3, wherein the phosphorus content is 4.5 multiplied by 1015 atoms/cm3≤P3＜7.5×1015 atoms/cm3；
When the grading grade is TC4, the phosphorus content in the corresponding purified ingot core is P4, wherein the phosphorus content is 7.5 multiplied by 1015 atoms/cm3≤P4＜10.5×1015 atoms/cm3；
When the grading grade is TC5, the phosphorus content in the corresponding purified ingot core is P5, wherein the phosphorus content is 10.5 multiplied by 1015 atoms/cm3≤P5＜13.5×1015 atoms/cm3；
When the grading grade is TC6, the phosphorus content in the corresponding purified ingot core is P6, wherein P6 is more than or equal to 13.5 multiplied by 1015 atoms/cm3。
4. The grading method according to any one of claims 1 to 3, wherein in the step S1, when the resistivity of the bottom of the purified ingot core is obtained, the resistivity at a distance of 1cm to 3cm from the bottom surface of the purified ingot core is tested.
5. The grading method according to claim 4, wherein in the step S1, when the resistivity of the bottom of the purified ingot core is obtained, the resistivity at a distance of 2cm from the bottom surface of the purified ingot core is tested.
6. The grading method according to any one of claims 1 to 3, wherein in step S1, when the top resistivity of the purified ingot core is obtained, the resistivity at a distance of B mm from the top surface of the purified ingot core is tested, wherein B = the height value/10 of the purified ingot core.
7. The grading method according to any one of claims 1 to 3, wherein in step S1, the bottom P/N type of the purified ingot core is P type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710961176.7A CN107832346B (en) | 2017-10-13 | 2017-10-13 | Grading method for purifying ingot core |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710961176.7A CN107832346B (en) | 2017-10-13 | 2017-10-13 | Grading method for purifying ingot core |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107832346A CN107832346A (en) | 2018-03-23 |
| CN107832346B true CN107832346B (en) | 2021-05-14 |
Family
ID=61648150
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710961176.7A Active CN107832346B (en) | 2017-10-13 | 2017-10-13 | Grading method for purifying ingot core |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107832346B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10121192A (en) * | 1996-10-22 | 1998-05-12 | Sumitomo Metal Ind Ltd | Steel sheet excellent in formability and hardenability |
| CN101691669A (en) * | 2009-12-10 | 2010-04-07 | 嘉兴明通光能科技有限公司 | Boron-phosphorus doped mother alloy doping method after shoulder hanging in CZ monocrystalline silicon production |
| CN101696514A (en) * | 2009-09-30 | 2010-04-21 | 常州天合光能有限公司 | Method for producing polycrystal ingot |
| CN102925964A (en) * | 2012-11-28 | 2013-02-13 | 英利能源（中国）有限公司 | Preparation method of P type semiconductor and P type doping agent |
| CN104866975A (en) * | 2015-06-01 | 2015-08-26 | 山东大海新能源发展有限公司 | Quality evaluation method for polycrystalline silicon ingot |
| CN106098851A (en) * | 2016-08-01 | 2016-11-09 | 芜湖格利特新能源科技有限公司 | A kind of stepping method of crystal silicon solar energy battery |
| CN106294302A (en) * | 2016-08-10 | 2017-01-04 | 宁夏高创特能源科技有限公司 | A kind of silicon target dispensing regulation polarity, resistivity measuring method |
-
2017
- 2017-10-13 CN CN201710961176.7A patent/CN107832346B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10121192A (en) * | 1996-10-22 | 1998-05-12 | Sumitomo Metal Ind Ltd | Steel sheet excellent in formability and hardenability |
| CN101696514A (en) * | 2009-09-30 | 2010-04-21 | 常州天合光能有限公司 | Method for producing polycrystal ingot |
| CN101691669A (en) * | 2009-12-10 | 2010-04-07 | 嘉兴明通光能科技有限公司 | Boron-phosphorus doped mother alloy doping method after shoulder hanging in CZ monocrystalline silicon production |
| CN102925964A (en) * | 2012-11-28 | 2013-02-13 | 英利能源（中国）有限公司 | Preparation method of P type semiconductor and P type doping agent |
| CN104866975A (en) * | 2015-06-01 | 2015-08-26 | 山东大海新能源发展有限公司 | Quality evaluation method for polycrystalline silicon ingot |
| CN106098851A (en) * | 2016-08-01 | 2016-11-09 | 芜湖格利特新能源科技有限公司 | A kind of stepping method of crystal silicon solar energy battery |
| CN106294302A (en) * | 2016-08-10 | 2017-01-04 | 宁夏高创特能源科技有限公司 | A kind of silicon target dispensing regulation polarity, resistivity measuring method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107832346A (en) | 2018-03-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101131371B (en) | Impurity content detecting and analyzing method for refined metallurgy silicon | |
| KR100700082B1 (en) | Quality estimating method for cropping a single crystal ingot | |
| JP5278174B2 (en) | Silicon epitaxial wafer and manufacturing method thereof | |
| JP2012525322A (en) | UMG-SI raw material quality control process | |
| Lavergne et al. | Anomalous grain growth in a polycrystalline monolayer of colloidal hard spheres | |
| JP2019504817A (en) | Phosphorus-doped silicon single crystal | |
| CN107832346B (en) | Grading method for purifying ingot core | |
| US8655471B2 (en) | Impurity amount control system for manufacturing single crystal and impurity amount control method for manufacturing single crystal | |
| CN111044956B (en) | Hysteresis loss estimation method | |
| WO2018105192A1 (en) | Production method for monocrystalline silicon | |
| CN109950166B (en) | Grain size detection method | |
| JP5885195B2 (en) | Crystal quality evaluation method and crystal quality evaluation apparatus for Si crystal | |
| CN105115998B (en) | A kind of powder diffraction preferred orientation parameter determination method | |
| CN110133348A (en) | A kind of compensation method, system and the storage medium of electric energy meter self-heating error | |
| CN111477560B (en) | Rapid detection method for distinguishing gallium-boron-doped single crystal silicon rods for solar cell | |
| CN111479957A (en) | Method for verifying thermal history of semiconductor ingot | |
| Chen et al. | Run-by-run process control of metal sputter deposition: Combining time series and extended Kalman filter | |
| US8406911B2 (en) | Implementing sequential segmented interleaving algorithm for enhanced process control | |
| KR20140095784A (en) | Method for controlling a quality of single crystal ingot | |
| US20210242095A1 (en) | Semiconductor manufacturing equipment and semiconductor manufacturing method | |
| Jiptner et al. | Dislocation behavior in seed‐cast grown Si ingots based on crystallographic orientation | |
| JP2010083712A (en) | Method for estimating crystal defect state and method for manufacturing silicon wafer | |
| Ge et al. | Machining damage of monocrystalline silicon by specific crystallographic plane cutting of wire electrical discharge machining | |
| TWI389233B (en) | In-line wafer measurement data compensate method | |
| CN116168788B (en) | Method and system for analyzing segregation coefficient of molten liquid silicon based on big data |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |