CN115094518A - Heater, crystal pulling furnace and method for controlling diameter of large-diameter monocrystalline silicon rod - Google Patents
Heater, crystal pulling furnace and method for controlling diameter of large-diameter monocrystalline silicon rod Download PDFInfo
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- CN115094518A CN115094518A CN202210697737.8A CN202210697737A CN115094518A CN 115094518 A CN115094518 A CN 115094518A CN 202210697737 A CN202210697737 A CN 202210697737A CN 115094518 A CN115094518 A CN 115094518A
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- diameter
- heater
- silicon rod
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- single crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/18—Heating of the melt or the crystallised materials using direct resistance heating in addition to other methods of heating, e.g. using Peltier heat
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a heater, a crystal pulling furnace and a method for controlling the diameter of a large-diameter monocrystalline silicon rod, and relates to the field of monocrystalline silicon crystal growth. The crystal pulling furnace comprises the heater for controlling the diameter of the large-diameter single crystal silicon rod. The method for controlling the diameter of the large-diameter monocrystalline silicon rod is realized by adopting the crystal pulling furnace for controlling the diameter of the large-diameter monocrystalline silicon rod. The beneficial effects are that: the heater can be as close to the triple point as possible, and the increased and decreased heat from the increased power and the decreased power of the heater can be quickly reflected in the diameter change. The condition of the single crystal silicon rod can be observed manually from the right front side of the single crystal furnace conveniently, and the silicon rod state can be monitored by a sensor or a monitoring camera obliquely above the inside of the crystal pulling furnace conveniently without shielding sight or monitoring equipment.
Description
Technical Field
The invention relates to the field of growth of monocrystalline silicon crystals, in particular to a heater, a crystal pulling furnace and a method for controlling the diameter of a large-diameter monocrystalline silicon rod.
Background
Pulling means that when molten elemental silicon solidifies, the silicon atoms are arranged in a diamond lattice as a plurality of crystal nuclei, and if these crystal nuclei grow into crystal grains having the same crystal plane orientation, these crystal grains are combined in parallel to crystallize into single crystal silicon. Single crystal silicon is typically produced by first producing polycrystalline silicon or amorphous silicon and then growing rod-shaped single crystal silicon from the melt by the Czochralski or suspension float zone method. Single crystal silicon is mainly used for manufacturing semiconductor elements.
Generally, a large diameter single crystal silicon rod means a silicon rod having a diameter of 200mm or more. Traditionally, two graphite heaters are used in a large diameter Czochralski (Czochralski) crystal puller. One is located outside the quartz crucible and is a main heater, and the other is a bottom heater located below the quartz crucible. In the process of growing the silicon single crystal rod, the diameter is controlled by adjusting the pulling speed and the heater power. The adjustment of the pulling speed is a control effect belonging to a short range, namely, the reaction time of diameter change is dozens of seconds to a few minutes, the adjustment of the heater power is a control effect belonging to a long range, namely, the reaction can effectively start to influence the diameter within 20-40 minutes. However, when producing a low defect silicon single crystal rod, the pulling rate must be maintained within a small range, even locked to a fixed speed, so that the low defect silicon single crystal rod can be accurately produced, and the diameter cannot be adjusted by large pulling rate change. Since the diameter of the silicon melt in the quartz crucible needs to be effectively influenced after the power of the heater is adjusted every time, it takes a long time to react on the diameter, and thus, the silicon rod with uniform diameter is difficult to grow by independently depending on the adjustment of the power of the heater for a long distance.
Therefore, the present invention is directed to solve the above problems, and provides a heater having a special shape near the triple point for rapidly adjusting the diameter of the ingot without changing the pulling rate.
Disclosure of Invention
The technical problem to be solved by the invention is how to control the large diameter.
The technical scheme for solving the technical problems is as follows: a heater for controlling the diameter of a large-diameter monocrystalline silicon rod is in a cylindrical shape with an inverted frustum shape and an opening at the upper part and the lower part.
The invention has the beneficial effects that: the inverted frustum cylindrical heater can be as close to the liquid level of the crucible as possible, namely, as close to a triple point, namely, a crystal growth front, and the heater can quickly respond to the diameter change by increasing and decreasing the heat increased and decreased by the power. Meanwhile, the inverted cone-shaped heater is adopted, the diameter of the upper end of the inverted cone-shaped heater is larger, the condition of the single crystal silicon rod can be observed manually from the right front side of the single crystal furnace conveniently, a sensor or a monitoring camera arranged obliquely above the inside of the crystal pulling furnace can monitor the state of the silicon rod conveniently, and the sight line or the monitoring equipment is not shielded.
On the basis of the technical scheme, the invention can be improved as follows.
Further, the heater is made of graphite or silicon carbide.
The beneficial effect of adopting the further scheme is that: the heater is made of graphite or silicon carbide and adopts a resistance heating mode.
Further, the circumferential side wall of the heater is in a square wave shape.
Further, the height H of the heater is 100-180 mm.
Further, the power of the heater is 5-20 kW.
The beneficial effect of adopting the above further scheme is: the power range usually used for adjusting the diameter is 10-20kW, and when no diameter adjustment is required, i.e. during normal crystal pulling, a power of 5-9kW is used.
Further, the inner diameter d of the lower end of the heater is 60-70mm larger than the diameter of the single crystal silicon rod.
The invention also provides a crystal pulling furnace for controlling the diameter of the large-diameter monocrystalline silicon rod, which comprises the heater for controlling the diameter of the large-diameter monocrystalline silicon rod.
The crucible is characterized by further comprising a crucible and a guide cylinder, wherein the guide cylinder is fixed above the crucible, the heater is fixed on the inner side of the lower end of the guide cylinder, and the distance from the lower end of the heater to the silicon liquid level in the crucible is 25-40 mm.
The beneficial effect of adopting the above further scheme is: the heater is very close to the triple point or the solid-liquid interface, the reaction time for adjusting the diameter can be greatly accelerated due to the position of the heater, the adjustment of the power can be quickly reflected on the diameter change of the silicon rod within 1 minute to several minutes, and therefore, the silicon single crystal rod with uniform diameter and low defect can be easily manufactured.
Further, an inductor or a monitoring camera is arranged above the crucible in an inclined mode.
The beneficial effect of adopting the further scheme is that: the inverted frustum-shaped cylindrical heater can avoid the inductor or the monitoring camera, so that the inductor or the monitoring camera can effectively acquire the relevant data of the growth condition of the silicon rod.
The invention also provides a method for controlling the diameter of the large-diameter monocrystalline silicon rod, which is realized by adopting the crystal pulling furnace for controlling the diameter of the large-diameter monocrystalline silicon rod and comprises the following steps: the diameter of the large-diameter single crystal silicon rod is controlled by controlling the power of the heater.
Drawings
FIG. 1 is a front view of a heater for controlling the diameter of a large diameter single crystal silicon rod according to the present invention;
FIG. 2 is a front view of a crystal pulling furnace of the present invention for controlling the diameter of a large diameter single crystal silicon ingot;
FIG. 3 is a schematic diagram of a method of controlling the diameter of a large diameter single crystal silicon rod according to the present invention.
In the drawings, the components represented by the respective reference numerals are listed below:
1. a heater; 2. a crucible; 3. a guide shell.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1 and 2, in the present embodiment, a heater for controlling the diameter of a large-diameter single crystal silicon rod is provided, and the heater 1 is in the shape of an inverted truncated cone and a cylinder with an open top and a closed bottom.
The inverted frustum cylindrical heater can be as close to the liquid level of the crucible 2 as possible, namely, as close to a triple point, namely, a crystal growth front, and the heater can quickly respond to the diameter change by increasing and decreasing the heat quantity increased and decreased by the power. Meanwhile, the inverted cone-shaped heater is adopted, the diameter of the upper end of the inverted cone-shaped heater is larger, the condition of the single crystal silicon rod can be observed manually from the right front side of the single crystal furnace conveniently, a sensor or a monitoring camera arranged obliquely above the inside of the crystal pulling furnace can monitor the state of the silicon rod conveniently, and the sight line or the monitoring equipment is not shielded.
The heater 1 is fixedly connected with one end of a support rod, the other end of the support rod is used for being connected with the inner wall of a shell of the crystal pulling furnace, and therefore the heater 1 is fixed in the crystal pulling furnace through the support rod.
On the basis of the scheme, the heater 1 is made of graphite or silicon carbide.
The heater 1 is made of graphite or silicon carbide and adopts a resistance heating mode.
On the basis of the scheme, as shown in fig. 1, the circumferential side wall of the heater 1 is in a square wave shape.
Specifically, the circumferential side wall of the heater 1 is in a square wave shape, that is, the heater 1 is made of strip-shaped material and bent into a wave shape, and the corner is in a right-angle shape.
Alternatively, the heater 1 may also be an inverted frustum-shaped cylindrical plate, or a plurality of hollowed-out holes are formed in the inverted frustum-shaped cylindrical plate, and the hollowed-out holes may be in a geometric shape such as a strip, a rectangle, or a circle.
On the basis of the scheme, the height H of the heater 1 is 100-180 mm.
On the basis of the scheme, the power of the heater 1 is 5-20 kW.
The power range usually used for adjusting the diameter is 10-20kW, and when no diameter adjustment is required, i.e. during normal crystal pulling, a power of 5-9kW is used.
On the basis of the scheme, the inner diameter d of the lower end of the heater 1 is 60-70mm larger than the diameter of the single crystal silicon rod.
Specifically, the heater 1 is coaxial with the single crystal silicon rod, and the distance between the inner wall of the lower end of the heater 1 and the outer wall of the single crystal silicon rod is 30-35 mm.
The embodiment also provides a crystal pulling furnace for controlling the diameter of the large-diameter monocrystalline silicon rod, which comprises the heater for controlling the diameter of the large-diameter monocrystalline silicon rod.
On the basis of the scheme, the crystal pulling furnace further comprises a crucible 2 and a guide cylinder 3, the guide cylinder 3 is fixed above the crucible 2, the heater 1 is fixed on the inner side of the lower end of the guide cylinder 3, and the distance from the lower end of the heater 1 to the silicon liquid level in the crucible 2 is 25-40 mm.
The position of the heater 1 is very close to the triple point or the solid-liquid interface, the reaction time for adjusting the diameter can be greatly accelerated due to the position of the heater, the adjustment of the power can be quickly reflected on the diameter change of the silicon rod within 1 minute to several minutes, and therefore, the silicon single crystal rod with uniform diameter and low defect can be easily manufactured.
Wherein, the heater 1 is directly fixed on the guide shell 3 or fixed with the shell of the crystal pulling furnace through a support rod and is positioned at the inner side of the lower end of the guide shell 3.
On the basis of the scheme, an inductor or a monitoring camera is arranged above the crucible 2 in an inclined mode.
The inverted frustum-shaped cylindrical heater can avoid the inductor or the monitoring camera, so that the inductor or the monitoring camera can effectively acquire the relevant data of the growth condition of the silicon rod.
In one specific embodiment, the crystal pulling furnace further comprises a shell, a main heater and a bottom heater, wherein the main heater, the bottom heater, a heater 1, a crucible 2 and a guide cylinder 3 are all installed in the shell, the heater 1 is fixedly connected with the inner top wall of the shell through a support rod, the crucible 2 is fixed in the middle of the shell, the guide cylinder 3 is in a shape of an inverted frustum cylinder and is fixed above the liquid level in the crucible 2, and the heater 1 is located on the inner side of the lower end of the guide cylinder 3. The main heater is arranged at the outer side of the circumferential direction of the crucible 2, and the bottom heater is arranged at the bottom of the crucible 2.
The embodiment also provides a method for controlling the diameter of the large-diameter monocrystalline silicon rod, which is realized by adopting the crystal pulling furnace for controlling the diameter of the large-diameter monocrystalline silicon rod, and the method comprises the following steps: the diameter of the large-diameter single crystal silicon rod is controlled by controlling the power of the heater 1.
Specifically, as shown in fig. 3, a diameter set value and a heater power set value are input to the heater control system, the heater control system adjusts an actual value of the heater power to control the diameter of the large-diameter single crystal silicon rod, the actual diameter of the single crystal silicon rod is measured and fed back to the heater control system during the process, and the heater control system adjusts the actual value of the heater power according to the actual diameter of the single crystal silicon rod to keep the diameter of the single crystal silicon rod uniform.
In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the scope of the present invention, which is intended to cover any modifications, equivalents, improvements, etc. within the spirit and scope of the present invention.
Claims (10)
1. A heater for controlling the diameter of a large-diameter monocrystalline silicon rod is characterized in that the heater (1) is in a shape of an inverted frustum and a cylinder with an opening at the upper part and the lower part.
2. The heater for controlling the diameter of the large-diameter single crystal silicon rod as claimed in claim 1, wherein the material of the heater (1) is graphite or silicon carbide.
3. The heater for controlling the diameter of the large-diameter single crystal silicon rod as recited in claim 1, wherein the circumferential side wall of the heater (1) is in a square wave shape.
4. The heater for controlling the diameter of the large-diameter monocrystalline silicon rod as recited in claim 1, wherein the height H of the heater (1) is 100-180 mm.
5. A heater for controlling the diameter of a large-diameter single crystal silicon rod as claimed in any one of claims 1 to 4, wherein the power of the heater (1) is 5 to 20 kW.
6. A heater for controlling the diameter of a large-diameter single crystal silicon rod as claimed in any one of claims 1 to 4, wherein the inner diameter d of the lower end of the heater (1) is 60 to 70mm larger than the diameter of the single crystal silicon rod.
7. A crystal pulling furnace for controlling the diameter of a large diameter single crystal silicon rod, comprising the heater for controlling the diameter of a large diameter single crystal silicon rod as set forth in any one of claims 1 to 6.
8. A crystal pulling furnace for controlling the diameter of a large-diameter monocrystalline silicon rod as claimed in claim 7, characterized by further comprising a crucible (2) and a guide cylinder (3), wherein the guide cylinder (3) is fixed above the crucible (2), the heater (1) is fixed on the inner side of the lower end of the guide cylinder (3), and the distance from the lower end of the heater (1) to the silicon liquid level in the crucible (2) is 25-40 mm.
9. A crystal pulling furnace for controlling the diameter of a large diameter single crystal silicon rod as set forth in claim 8, wherein an inductor or a monitoring camera is provided obliquely above the crucible (2).
10. A method of controlling the diameter of a large diameter single crystal silicon rod, which is carried out using the crystal pulling furnace for controlling the diameter of a large diameter single crystal silicon rod as set forth in any one of claims 7 to 9, comprising: the diameter of the large-diameter single crystal silicon rod is controlled by controlling the power of the heater (1).
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210697737.8A CN115094518A (en) | 2022-06-20 | 2022-06-20 | Heater, crystal pulling furnace and method for controlling diameter of large-diameter monocrystalline silicon rod |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210697737.8A CN115094518A (en) | 2022-06-20 | 2022-06-20 | Heater, crystal pulling furnace and method for controlling diameter of large-diameter monocrystalline silicon rod |
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| CN110923806A (en) * | 2019-12-24 | 2020-03-27 | 西安奕斯伟硅片技术有限公司 | Single crystal furnace and preparation method of single crystal silicon rod |
| CN210736948U (en) * | 2019-10-18 | 2020-06-12 | 徐州鑫晶半导体科技有限公司 | Single crystal furnace |
| CN114250508A (en) * | 2021-12-02 | 2022-03-29 | 山东有研艾斯半导体材料有限公司 | Method for rapidly controlling diameter of czochralski silicon |
-
2022
- 2022-06-20 CN CN202210697737.8A patent/CN115094518A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007204332A (en) * | 2006-02-03 | 2007-08-16 | Sumco Corp | Device and method for manufacturing single crystal |
| US20140373774A1 (en) * | 2012-02-21 | 2014-12-25 | Shin-Etsu Handotai Co., Ltd. | Method for calculating a height position of silicon melt surface, method for pulling silicon single crystal, and silicon single crystal pulling apparatus |
| CN104583467A (en) * | 2013-06-21 | 2015-04-29 | Lg矽得荣株式会社 | Silicon single crystal growing device and method of growing same |
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