CN106622824A - 一种等离子体聚合涂层装置 - Google Patents

一种等离子体聚合涂层装置 Download PDF

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Publication number
CN106622824A
CN106622824A CN201611076904.8A CN201611076904A CN106622824A CN 106622824 A CN106622824 A CN 106622824A CN 201611076904 A CN201611076904 A CN 201611076904A CN 106622824 A CN106622824 A CN 106622824A
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China
Prior art keywords
vacuum chamber
discharge
vacuum
coating device
placing articles
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CN201611076904.8A
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CN106622824B (zh
Inventor
宗坚
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Jiangsu Favored Nanotechnology Co Ltd
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WUXI RJ INDUSTRIES Co Ltd
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Priority to CN201611076904.8A priority Critical patent/CN106622824B/zh
Application filed by WUXI RJ INDUSTRIES Co Ltd filed Critical WUXI RJ INDUSTRIES Co Ltd
Priority to JP2019527143A priority patent/JP6990704B2/ja
Priority to EP17876726.5A priority patent/EP3539676B1/en
Priority to BR112019005796-0A priority patent/BR112019005796B1/pt
Priority to KR1020197014395A priority patent/KR102175721B1/ko
Priority to PCT/CN2017/081773 priority patent/WO2018098980A1/zh
Publication of CN106622824A publication Critical patent/CN106622824A/zh
Priority to US15/890,476 priority patent/US10424465B2/en
Application granted granted Critical
Publication of CN106622824B publication Critical patent/CN106622824B/zh
Priority to US16/195,537 priority patent/US11339477B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/08—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means
    • B05B12/12—Arrangements for controlling delivery; Arrangements for controlling the spray area responsive to condition of liquid or other fluent material to be discharged, of ambient medium or of target ; responsive to condition of spray devices or of supply means, e.g. pipes, pumps or their drive means responsive to conditions of ambient medium or target, e.g. humidity, temperature position or movement of the target relative to the spray apparatus
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B16/00—Spray booths
    • B05B16/40—Construction elements specially adapted therefor, e.g. floors, walls or ceilings
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B5/00—Electrostatic spraying apparatus; Spraying apparatus with means for charging the spray electrically; Apparatus for spraying liquids or other fluent materials by other electric means
    • B05B5/025—Discharge apparatus, e.g. electrostatic spray guns
    • B05B5/053—Arrangements for supplying power, e.g. charging power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/14—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by electrical means
    • B05D3/141—Plasma treatment
    • B05D3/142—Pretreatment
    • B05D3/144—Pretreatment of polymeric substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
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    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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    • H01—ELECTRIC ELEMENTS
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    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Polymerisation Methods In General (AREA)
  • Plasma Technology (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
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Abstract

一种等离子体聚合涂层装置，属于等离子体工程技术领域，该装置真空室侧部的室体内壁任一横截面为相同直径的圆或相同边长的正多边形，正多边形边数至少为6边；真空室内壁处安装有多孔电极，多孔电极与高频电源连接，真空室外壁上密封安装有至少两个放电腔，放电腔与真空室内壁连接处设置有至少两层金属栅网，真空室内的中心轴上竖直安装有尾气收集管，真空室内设置有旋转置物架，所述旋转置物架的旋转轴与真空室的中心轴同轴，旋转置物架上放置待处理基材。该装置采用中心轴对称真空室结构保持空间聚合反应活性物种浓度的稳定性，具有真空室的容积大，单次处理批量大，处理效率高、成本低、批处理均匀性良好等优点。

Description

一种等离子体聚合涂层装置
技术领域
本发明属于等离子体工程技术领域，涉及到一种等离子体涂层装置。
背景技术
等离子体聚合涂层处理是一种重要的表面处理方法，它是将需要处理的基材放在真空室内，在真空状态下通入工艺气体和气态有机类单体，通过放电把有机类气态单体等离子体化，使其产生各类活性种，由这些活性种之间或活性种与单体之间进行加成反应，在基材表面形成聚合物薄膜。在疏水薄膜等一些应用中，纳米尺度的等离子体聚合涂层具有优异的特性。但是由于纳米聚合物涂层的膜层很薄，它对涂层的均匀性有很高的要求。现有的等离子体纳米涂层装置采用方形的真空室，在涂层处理过程中，治具及其上放置的基材在真空室内的位置是固定的，由于同一批处理的不同基材在真空室内的不同位置与电极、单体/载体气体出口、真空排气口等之间距离的差别，不可避免地会产生涂层均匀性的差别。为了减小这种批处理的不均匀性，现有的等离子体纳米涂层装置只能采用较小容积的真空室和较小的单次处理批量，这很大地降低了处理效率、增大了成本。而即使这样，也仍然不能达到满意的批处理均匀性。随着目前纳米聚合物涂层应用的快速拓展，加工需求和批量急剧增加，解决目前等离子体纳米涂层加工现有技术存在的批量小、效率低、成本高、批处理均匀性差的问题十分现实和紧迫。
发明内容
本发明要解决的技术问题是提供一种等离子体纳米涂层装置，以解决现有等离子体纳米涂层装置采用方形真空室的容积小、单次处理批量小，处理效率低、成本高、批处理均匀性不良的问题。
本发明技术方案是：一种等离子体聚合涂层装置，包括真空室，其特征在于：所述真空室侧部的室体内壁任一横截面为相同直径的圆或相同边长的正多边形，所述正多边形边数至少为6边；
所述真空室内靠近真空室的内壁处安装有多孔电极，所述多孔电极为与真空室内壁保持间距的多孔弧面结构，所述多孔电极与高频电源连接，高频电源的功率为15-1000W，多孔电极由高频电源供电，放电时产生等离子体用于基材表面清洁和预处理；
所述真空室外壁上密封安装有至少两个放电腔；多孔电极与各放电腔可以根据工艺需要共同放电或分别独立放电。
多孔电极产生等离子体用于清洗，即表面清洁：多孔电极较大功率连续放电产生较强等离子体，用于涂层前清洗基材表面的水气、油污等有机物杂质，还可以活化有机的基材，在其表面形成悬挂键，利于涂层的沉积，增强基材与涂层的结合力，多孔电极在涂层过程中不工作；
放电腔产生等离子体用于聚合：涂层过程中各放电腔内较小功率放电产生较弱等离子体，由金属栅网控制断续释放进入真空室引发单体聚合并沉积在基材表面形成涂层。
所述放电腔与真空室内壁连接处设置有至少两层金属栅网，所述金属栅网与真空室内壁绝缘，金属栅网与脉冲电源连接，脉冲电源的作用是在金属栅网上施加正脉冲偏压，断续释放放电腔内的等离子体进入真空室，其中脉冲关断期间等离子体被多层金属栅网阻挡在放电腔内，脉冲施加期间等离子体穿过多层金属栅网进入真空室以引发真空室内的单体蒸汽发生聚合反应。
所述放电腔内设有放电源，放电源连接供电源，所述放电腔连接有载体气体管路，载体气体管路另一端连接到载体气体源，单体蒸汽管路连接到真空室内，且其出口位于放电腔前方，单体蒸汽管路另一端连接到单体蒸汽源；
所述真空室内的中心轴上竖直安装有尾气收集管，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；
所述真空室内设置有旋转置物架，所述旋转置物架的旋转轴与真空室的中心轴同轴，旋转置物架上放置待处理基材。
所述真空室的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的平板或球缺、正多边形、椭圆形等的拱形结构。
所述多孔电极形状为圆柱筒形状或至少分成两段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为1-6cm，所述多孔电极上布满通孔，孔径为2-30mm，孔间隔为2-30mm。
所述放电腔为圆筒形，材质是铝、碳钢或不锈钢，直径为5-20cm，深度为3-15cm，相邻放电腔轴线之间的间距为7-40cm。
所述金属栅网层数为2-6层，材质是不锈钢或镍，网孔大小为100-1000目，透过率为25％-40％。
所述脉冲电源输出正脉冲，其参数为：峰值20-140V、脉宽2μs-1ms、重复频率20Hz-10kHz。
所述放电源是灯丝或电极或感应线圈或微波天线，且其放电功率为2-500W。
所述单体蒸汽管路出口与放电腔之间的距离为1-10cm。
所述尾气收集管内径为25-100mm，其管壁上均匀开孔，孔径为2-30mm，孔间隔为2-100mm。
所述旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可随旋转轴转动，所述旋转置物架上对称固定设置2-8层置物台，所述置物台上放置待处理的基材。
所述旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称设置2-8根行星旋转轴，所述行星旋转轴垂直于所述旋转置物架并可自转；
所述行星旋转轴上设置2-8层旋转置物台，所述旋转置物台放置待处理的基材。
本发明的有益效果是：
1、采用中心轴对称真空室结构保持空间聚合反应活性物种浓度的稳定性。
采用真空室侧壁进气、径向输运、中心轴向排气的方式：
载体气体管路在各放电腔内设置出口，载体气体经由其管路送入各放电腔内，再通过多层金属栅网扩散进入真空室；单体蒸汽管路在真空室内每个放电腔外前方设置出口，单体蒸汽经由其管路送入真空室内；在真空室轴线上与真空室共轴设置一个尾气收集管，尾气收集管纵向贯穿真空室，管端连通真空泵，管壁上均匀开孔，尾气由尾气收集管上的开孔进入尾气收集管，再由真空泵排出真空室。
上述采用真空室侧壁进气、径向输运、中心轴向排气的方式中气体输运过程是汇集的，这有利于提高空间聚合反应活性物种浓度的稳定性，活性物种分布更加均匀，其过程是：单体蒸汽在各放电腔附近受等离子体作用产生聚合反应活性物种；聚合反应活性物种在载体气体带动下沿径向向真空室轴线方向输运；在输运过程中聚合反应活性物种的数量不断消耗减少，但是另一方面聚合反应活性物种在输运过程中不断地汇集，补偿了数量的减少，使其浓度保持稳定，真空室内活性物种的体积密度保持不变，批处理均匀性良好，现有涂层设备和技术同批处理基材涂层厚度差别大于30％，而本发明的同批处理基材涂层厚度差别小于10％。
2、采用旋转置物架可以显著提高各个基材涂层的均匀性
真空室内安装有旋转置物架；旋转置物架上的置物台真空室内旋转或做行星旋转运动，特别是行星旋转运动是置物台绕自身行星旋转轴自转，同时随旋转置物架的旋转轴绕真空室同轴线公转；置物台上放置待处理的基材。行星旋转使基材在涂层处理过程中所处的空间位置不断变化，不同基材在一个完整的处理过程中所处的空间位置变化相同，从而消除现有技术中因不同基材所处的空间位置不同而造成的涂层效果的差别，使得各个基材处理程度相同，涂层效果基本一样，各个基材之间的均匀性更好。
3、真空室体积可以大大增加，处理效率显著提高
由于真空室结构和置物架的改进使得在大幅提高批处理涂层膜厚均匀性，真空室容积可以扩大到目前真空室的5-6倍，批处理数量和处理效率相应大幅提高。
4、多层栅网对等离子体和单体都有阻滞作用
多层金属栅网对载体气体由放电腔向真空室的扩散具有阻滞作用，使放电腔内气压高于真空室内气压；多层金属栅网对单体蒸汽由真空室向放电腔的反扩散具有阻滞作用，又由于放电腔内气压高于真空室内气压，使单体蒸汽不易反扩散由真空室进入放电腔，避免单体蒸汽被放电腔内的连续放电等离子体过度分解破坏，本发明的装置可以有效的保护单体蒸汽不被分解破坏，从而获得非常好质量的聚合物的涂层。
附图说明
图1为实施例1旋转置物架上设置行星旋转轴的等离子体聚合涂层装置正面剖视结构示意图。
图2为图1的俯视结构示意图。
图中，1、真空室，2、多孔电极，3、高频电源，4、放电腔，5、多层金属栅网，6、脉冲电源，7、放电源，8、供电源，9、载体气体管路，10、单体蒸汽管路，11、尾气收集管，12、旋转置物架，13行星旋转轴，14、旋转置物台，15、基材。
具体实施方式
下面结合技术方案和附图详细叙述本发明的具体实施例。
实施例1
如图1和图2所述的一种等离子体聚合涂层装置，包括真空室，真空室1侧部的室体内壁任一横截面为相同直径的圆，即真空室的室体的内壁为圆柱体。
真空室1的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的球缺。
真空室1内靠近真空室1的内壁处安装有多孔电极2，多孔电极2为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源3连接，真空室外壁上密封安装有八个放电腔4；
多孔电极2形状为圆柱筒形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为1cm，多孔电极2上布满通孔，孔径为30mm，孔间隔为30mm；与多孔电极连接的高频电源的功率是15W。
放电腔4为圆筒形，材质是铝，直径为5cm，深度为15cm，相邻放电腔4轴线之间的间距为40cm。单体蒸汽管路10出口与放电腔4之间的距离为1cm。
放电腔与真空室内壁连接处设置有两层金属栅网5，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源6连接，放电腔4内设有放电源7，放电源连接供电源8，放电腔连接有载体气体管路9，载体气体管路另一端连接到载体气体源，单体蒸汽管路10连接到真空室内，且其出口位于放电腔4前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是不锈钢，网孔大小为100目，透过率为40％。
脉冲电源6输出正脉冲，其参数为：峰值20V、脉宽1ms、重复频率10kHz。
放电源7是灯丝且其放电功率为2W。
真空室内的中心轴上竖直安装有尾气收集管11，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管11内径为25mm，其管壁上均匀开孔，孔径为2mm，孔间隔为2mm。
真空室内设置有旋转置物架12，旋转置物架12的旋转轴与真空室的中心轴同轴，旋转置物架可随旋转轴转动，旋转置物架上对称设置4根行星旋转轴13，行星旋转轴垂直于旋转置物架12并可自转；
行星旋转轴上设置4层旋转置物台14，所述旋转置物台放置待处理的基材15。
实施例2
一种等离子体聚合涂层装置，包括真空室1，真空室侧部的室体内壁任一横截面为相同边长的正六多边形；
真空室1的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的正六边形的拱形结构。
真空室1内靠近真空室1的内壁处安装有多孔电极2，多孔电极2为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源3连接，真空室外壁上密封安装有两个放电腔4；
多孔电极2形状为分成两段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为3cm，多孔电极2上布满通孔，孔径为18mm，孔间隔为15mm；与多孔电极连接的高频电源的功率是500W。
放电腔4为圆筒形，材质是碳钢，直径为20cm，深度为8cm，相邻放电腔4轴线之间的间距为20cm。单体蒸汽管路10出口与放电腔4之间的距离为6cm。
放电腔与真空室内壁连接处设置有四层金属栅网5，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源6连接，放电腔4内设有放电源7，放电源连接供电源8，放电腔连接有载体气体管路9，载体气体管路另一端连接到载体气体源，单体蒸汽管路10连接到真空室内，且其出口位于放电腔4前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为600目，透过率为32％。
脉冲电源6输出正脉冲，其参数为：峰值86V、脉宽0.1ms、重复频率700Hz。
放电源7是电极且其放电功率为280W。
真空室内的中心轴上竖直安装有尾气收集管11，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管11内径为60mm，其管壁上均匀开孔，孔径为16mm，孔间隔为55mm。
真空室内设置有旋转置物架12，旋转置物架12的旋转轴与真空室的中心轴同轴，旋转置物架可随旋转轴转动，旋转置物架上对称设置2根行星旋转轴13，行星旋转轴垂直于旋转置物架12并可自转；
行星旋转轴上设置8层旋转置物台14，所述旋转置物台放置待处理的基材15。
实施例3
一种等离子体聚合涂层装置，包括真空室1，真空室侧部的室体内壁任一横截面为相同边长的正九多边形；
真空室1的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的正九边形平板。
真空室1内靠近真空室1的内壁处安装有多孔电极2，多孔电极2为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源3连接，真空室外壁上密封安装有两个放电腔4；
多孔电极2形状为分成四段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为6cm，多孔电极2上布满通孔，孔径为30mm，孔间隔为30mm；与多孔电极连接的高频电源的功率是1000W。
放电腔4为圆筒形，材质是不锈钢，直径为12cm，深度为3cm，相邻放电腔4轴线之间的间距为7cm。单体蒸汽管路10出口与放电腔4之间的距离为10cm。
放电腔与真空室内壁连接处设置有五层金属栅网5，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源6连接，放电腔4内设有放电源7，放电源连接供电源8，放电腔连接有载体气体管路9，载体气体管路另一端连接到载体气体源，单体蒸汽管路10连接到真空室内，且其出口位于放电腔4前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为1000目，透过率为25％。
脉冲电源6输出正脉冲，其参数为：峰值140V、脉宽2μs、重复频率20Hz。
放电源7是微波天线且其放电功率为500W。
真空室内的中心轴上竖直安装有尾气收集管11，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管11内径为100mm，其管壁上均匀开孔，孔径为30mm，孔间隔为100mm。
真空室内设置有旋转置物架12，旋转置物架12的旋转轴与真空室的中心轴同轴，旋转置物架可随旋转轴转动，旋转置物架上对称设置8根行星旋转轴13，行星旋转轴垂直于旋转置物架12并可自转；
行星旋转轴上设置2层旋转置物台14，所述旋转置物台放置待处理的基材15。
实施例4
一种等离子体聚合涂层装置，包括真空室1，真空室侧部的室体内壁任一横截面为相同边长的正十二多边形；
真空室1的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的正十二边形拱形结构。
真空室1内靠近真空室1的内壁处安装有多孔电极2，多孔电极2为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源3连接，真空室外壁上密封安装有两个放电腔4；
多孔电极2形状为分成五段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为5cm，多孔电极2上布满通孔，孔径为12mm，孔间隔为18mm；与多孔电极连接的高频电源的功率是260W。
放电腔4为圆筒形，材质是不锈钢，直径为16cm，深度为6cm，相邻放电腔4轴线之间的间距为26cm。单体蒸汽管路10出口与放电腔4之间的距离为4cm。
放电腔与真空室内壁连接处设置有六层金属栅网5，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源6连接，放电腔4内设有放电源7，放电源连接供电源8，放电腔连接有载体气体管路9，载体气体管路另一端连接到载体气体源，单体蒸汽管路10连接到真空室内，且其出口位于放电腔4前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为360目，透过率为28％。
脉冲电源6输出正脉冲，其参数为：峰值115V、脉宽160μs、重复频率380Hz。
放电源7是灯丝且其放电功率为130W。
真空室内的中心轴上竖直安装有尾气收集管11，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管11内径为85mm，其管壁上均匀开孔，孔径为18mm，孔间隔为38mm。
旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称固定设置2层置物台，所述置物台上放置待处理的基材。
实施例5
一种等离子体聚合涂层装置，包括真空室1，真空室侧部的室体内壁任一横截面为相同直径的圆，即真空室的室体的内壁为圆柱体。
真空室1的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的圆形平板。
真空室1内靠近真空室1的内壁处安装有多孔电极2，多孔电极2为与真空室内壁保持间距的多孔弧面结构，多孔电极与高频电源3连接，真空室外壁上密封安装有两个放电腔4；
多孔电极2形状为分成八段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为2cm，多孔电极2上布满通孔，孔径为5mm，孔间隔为12mm；与多孔电极连接的高频电源的功率是120W。
放电腔4为圆筒形，材质是碳钢，直径为11cm，深度为8cm，相邻放电腔4轴线之间的间距为20cm。单体蒸汽管路10出口与放电腔4之间的距离为7cm。
放电腔与真空室内壁连接处设置有三层金属栅网5，金属栅网与真空室内壁绝缘，金属栅网与脉冲电源6连接，放电腔4内设有放电源7，放电源连接供电源8，放电腔连接有载体气体管路9，载体气体管路另一端连接到载体气体源，单体蒸汽管路10连接到真空室内，且其出口位于放电腔4前方，单体蒸汽管路另一端连接到单体蒸汽源。
金属栅网材质是镍，网孔大小为640目，透过率为30％。
脉冲电源6输出正脉冲，其参数为：峰值58V、脉宽620μs、重复频率55Hz。
放电源7是感应线圈且其放电功率为480W。
真空室内的中心轴上竖直安装有尾气收集管11，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；尾气收集管11内径为45mm，其管壁上均匀开孔，孔径为24mm，孔间隔为58mm。
旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称固定设置8层置物台，所述置物台上放置待处理的基材。

Claims (10)

1.一种等离子体聚合涂层装置，包括真空室，其特征在于：所述真空室(1)侧部的室体内壁任一横截面为相同直径的圆或相同边长的正多边形，所述正多边形边数至少为6边；
所述真空室(1)内靠近真空室(1)的内壁处安装有多孔电极(2)，所述多孔电极(2)为与真空室内壁保持间距的多孔弧面结构，所述多孔电极与高频电源(3)连接，所述真空室外壁上密封安装有至少两个放电腔(4)；
所述放电腔与真空室内壁连接处设置有至少两层金属栅网(5)，所述金属栅网与真空室内壁绝缘，金属栅网与脉冲电源(6)连接，所述放电腔(4)内设有放电源(7)，放电源连接供电源(8)，所述放电腔连接有载体气体管路(9)，载体气体管路另一端连接到载体气体源，单体蒸汽管路(10)连接到真空室内，且其出口位于放电腔(4)前方，单体蒸汽管路另一端连接到单体蒸汽源；
所述真空室内的中心轴上竖直安装有尾气收集管(11)，尾气收集管一端伸出真空室后与真空泵连接，所述尾气收集管的管壁上开孔；
所述真空室内设置有旋转置物架(12)，所述旋转置物架的旋转轴与真空室的中心轴同轴，旋转置物架上放置待处理基材。
2.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述真空室(1)的顶盖和底盖为与真空室的侧部室体内壁横截面匹配的平板或拱形结构。
3.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述多孔电极(2)形状为圆柱筒形状或至少分成两段圆柱弧面形状，且所述多孔电极与真空室同轴，与真空室的内壁间距为1-6cm，所述多孔电极(2)上布满通孔，孔径为2-30mm，孔间隔为2-30mm；所述与多孔电极连接的高频电源(3)的功率是15-1000W。
4.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述放电腔(4)为圆筒形，材质是铝、碳钢或不锈钢，直径为5-20cm，深度为3-15cm，相邻放电腔(4)轴线之间的间距为7-40cm；所述单体蒸汽管路(10)出口与放电腔(4)之间的距离为1-10cm。
5.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述金属栅网(5)层数为2-6层，材质是不锈钢或镍，网孔大小为100-1000目，透过率为25％-40％。
6.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述脉冲电源(6)输出正脉冲，其参数为：峰值20-140V、脉宽2μs-1ms、重复频率20Hz-10kHz。
7.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述放电源(7)是灯丝或电极或感应线圈或微波天线，且其放电功率为2-500W。
8.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述尾气收集管(11)内径为25-100mm，其管壁上均匀开孔，孔径为2-30mm，孔间隔为2-100mm。
9.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述旋转置物架的旋转轴与真空室的中心轴同轴，所述旋转置物架可绕旋转轴转动，所述旋转置物架上对称固定设置2-8层置物台，所述置物台上放置待处理的基材。
10.根据权利要求1所述的一种等离子体聚合涂层装置，其特征在于：所述旋转置物架(12)的旋转轴与真空室的中心轴同轴，所述旋转置物架可随旋转轴转动，所述旋转置物架上对称设置2-8根行星旋转轴(13)，所述行星旋转轴垂直于所述旋转置物架(12)并可自转；
所述行星旋转轴上设置2-8层旋转置物台(14)，所述旋转置物台放置待处理的基材(15)。
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WO2018214452A1 (zh) * 2017-05-21 2018-11-29 江苏菲沃泰纳米科技有限公司 一种基材运动式等离子体放电制备纳米涂层的设备及方法
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KR102572351B1 (ko) * 2017-05-21 2023-08-28 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 소지이동식 플라즈마 방전의 나노코팅층 제조 설비 및 방법
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KR102299313B1 (ko) * 2017-05-21 2021-09-06 지앙수 페이보레드 나노테크놀로지 컴퍼니., 리미티드 순환 고듀티비 펄스 방전 다기능성 나노 보호코팅층 제조방법
CN110408912A (zh) * 2019-09-11 2019-11-05 光驰科技(上海)有限公司 一种多片式旋转等离子体增强原子层沉积成膜装置
CN110684963A (zh) * 2019-10-21 2020-01-14 江苏菲沃泰纳米科技有限公司 用于镀膜设备的气流导散装置及其应用
CN112981375A (zh) * 2019-12-18 2021-06-18 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其镀膜方法
US11898248B2 (en) 2019-12-18 2024-02-13 Jiangsu Favored Nanotechnology Co., Ltd. Coating apparatus and coating method
CN112981375B (zh) * 2019-12-18 2023-09-22 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其镀膜方法
CN112981374A (zh) * 2019-12-18 2021-06-18 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其镀膜方法
CN112981373A (zh) * 2019-12-18 2021-06-18 江苏菲沃泰纳米科技股份有限公司 镀膜设备及其镀膜方法
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CN114836735A (zh) * 2021-02-01 2022-08-02 江苏菲沃泰纳米科技股份有限公司 基于icp的等离子体镀膜装置及其方法
WO2024078227A1 (zh) * 2022-10-12 2024-04-18 江苏菲沃泰纳米科技股份有限公司 一种有机硅纳米疏水膜层及其制备方法

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