CN106601866A - 硅片的表面钝化技术 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 abstract description 5
- 239000002210 silicon-based material Substances 0.000 abstract description 4
- 238000001514 detection method Methods 0.000 abstract description 3
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 abstract 4
- 210000004027 cell Anatomy 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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Abstract
本发明提供了一种硅片的表面钝化技术。本发明通过在硅片的表面制备聚苯乙烯磺酸薄膜,以实现对硅片表面的钝化。在硅片表面所制备的聚苯乙烯磺酸薄膜的厚度为纳米量级。聚苯乙烯磺酸薄膜钝化硅片表面后,可获得高质量的钝化效果,少子寿命可达到20ms以上。且制备聚苯乙烯磺酸薄膜可通过旋涂法、喷涂法或印刷法等来实现,钝化技术工艺简单,无需真空,无需高温,安全且便于操作。本发明所提供的钝化技术对于硅材料检测和硅太阳能电池的表面钝化具有非常重要的应用价值。
Description
技术领域
本发明涉及光伏太阳能电池领域,具体地说是一种硅片的表面钝化技术。
背景技术
硅材料内部是非常整齐有序的原子排列结构,晶格具有周期性。载流子在其内部具有很好的迁移和传输能力。但是在硅片表面,由于晶格周期性的间断,导致大量的悬挂键产生,这些悬挂键成为载流子的复合中心,即表面复合。表面复合对于太阳能电池是致命的影响,强烈的表面复合直接导致硅太阳能电池极差的性能。表面复合的影响在微电子工业中也是非常重要的,例如薄膜硅晶体管、漏极处界面缺陷态,对器件性能有很重要的影响。
钝化技术便是相应的解决方案,所谓钝化,就是用另一种原子与硅表面的悬挂键结合,形成化学键,进而减少表面悬挂键的产生,抑制表面复合。关于这一技术的成功与否,有一个表征指标,叫做有效少子寿命(或简称少子寿命)。有效少子寿命的高低反映了钝化效果的好坏。
目前比较常用的钝化技术有:二氧化硅、氮化硅、氧化铝和非晶硅等钝化技术。这些钝化技术有的需要高温(800℃左右)条件、有的需要高真空(10-4-10-6 Pa)环境,有的甚至需要危险的气源(如氮化硅和非晶硅需要易燃易爆的硅烷,氧化铝需要非常危险的三甲基铝)。就钝化效果而言,目前二氧化硅和非晶硅的钝化效果最好,两者钝化后都可以获得毫秒量级的少子寿命,例如高温氧化的二氧化硅钝化高阻硅片可以获得20毫秒以上的少子寿命,采用硅烷作为气源,真空设备PECVD制备的非晶硅薄膜可以获得10毫秒以上的少子寿命。这些钝化技术一般都应用于硅太阳能电池的表面钝化。
另外,如果仅仅测试硅片的少子寿命,为硅材料的检测和筛选提供数据的话,上述的高温真空等技术则由于成本高、操作复杂等问题不适用。常用的是氢氟酸和碘酒浸泡的方法钝化,这种技术的重要缺点是钝化效果较差,例如氢氟酸钝化后的少子寿命一般在0.1毫秒以下,碘酒钝化后的少子寿命通常低于1毫秒。
发明内容
本发明的目的就是提供一种硅片的表面钝化技术,该钝化技术为一种新型的聚合物聚苯乙烯磺酸(PSS)薄膜钝化技术。
本发明是这样实现的:一种硅片的表面钝化技术,在硅片的表面制备聚苯乙烯磺酸薄膜,以实现对硅片表面的钝化。PSS薄膜对硅片表面可起到非常好的钝化作用。
优选的,所述聚苯乙烯磺酸薄膜的厚度为纳米量级。
更优选的,所述聚苯乙烯磺酸薄膜的厚度为30nm-1000nm。
聚苯乙烯磺酸薄膜的制备工艺可以有多种,例如:旋涂法、蒸发法、印刷法、喷涂法等。
以旋涂法为例介绍聚苯乙烯磺酸薄膜的制备工艺,具体如下:
a、配制聚苯乙烯磺酸水溶液;
b、将聚苯乙烯磺酸水溶液旋涂在硅片表面形成聚苯乙烯磺酸薄膜;
c、将步骤b中旋涂好的聚苯乙烯磺酸薄膜进行烘烤,去除聚苯乙烯磺酸薄膜内部的水分。
优选的,步骤c中对聚苯乙烯磺酸薄膜进行烘烤的温度为100℃-200℃。
本发明通过在硅片的表面制备聚苯乙烯磺酸薄膜,实现了对硅片表面的钝化。聚苯乙烯磺酸薄膜钝化硅片表面后,可获得高质量的钝化效果,少子寿命可达到20ms以上。聚苯乙烯磺酸薄膜可通过旋涂法、蒸发法、印刷法或喷涂法等来制备,除蒸发法外,旋涂法、印刷法和喷涂法均具有钝化技术工艺简单,无需真空,无需高温,安全且便于操作的优点。蒸发法虽然需要真空条件,但是与现有技术中高真空(10-4-10-6 Pa)的苛刻条件相比,蒸发法无需高真空环境,其所需真空环境相对容易实现。
本发明所提供的PSS薄膜钝化技术对于硅材料检测和硅太阳能电池的表面钝化具有非常重要的应用价值。
附图说明
图1是本发明实施例中在硅片的正表面和背表面均制备聚苯乙烯磺酸薄膜(即PSS薄膜)作为钝化层的结构示意图。
图2是本发明中采用聚苯乙烯磺酸薄膜钝化硅片正表面后硅片的少子寿命曲线图。
具体实施方式
如图1所示,在硅片1的正表面以及背表面均制备有钝化层2,该钝化层2为PSS薄膜,通过PSS薄膜,可以对硅片1的表面起到非常好的钝化作用。PSS薄膜的厚度为纳米量级,优选的,PSS薄膜的厚度为30nm-1000nm。图1中所示的只是一个具体的例子,其他实施例中,也可以只在硅片的一个表面上形成PSS薄膜以作为钝化层。所形成的PSS薄膜作为钝化层时,该钝化层可以是全面覆盖硅片的表面,也可以是局部覆盖硅片表面,即:PSS薄膜可以与硅片表面局部接触,例如:制备栅型结构的PSS薄膜作为钝化层。
在硅片表面所形成的用作起钝化作用的PSS薄膜,其制备工艺可以有很多种,例如:旋涂法、蒸发法、印刷法或喷涂法等制备工艺。下面以旋涂法为例介绍在硅片的正表面制备PSS薄膜的过程,具体如下:
a、配制聚苯乙烯磺酸水溶液。
b、将聚苯乙烯磺酸水溶液旋涂在硅片正表面形成聚苯乙烯磺酸薄膜。通过控制旋涂时间及旋涂速度,控制所形成的聚苯乙烯磺酸薄膜的厚度在纳米量级。刚旋涂结束后,所形成的聚苯乙烯磺酸薄膜内含有水分,属于湿膜。
c、将步骤b中旋涂好的聚苯乙烯磺酸薄膜在100℃-200℃的温度下进行烘烤,去除聚苯乙烯磺酸薄膜内部的水分,形成固化的聚苯乙烯磺酸干膜。
采用聚苯乙烯磺酸薄膜对硅片的正表面进行钝化后,对硅片的少子寿命进行检测,所得少子寿命的曲线图如图2所示。由图2可知,采用本发明中聚苯乙烯磺酸薄膜对硅片的正表面进行钝化后,硅片的少子寿命可达20毫秒以上,因此本发明采用聚苯乙烯磺酸薄膜对硅片的表面进行钝化后具有非常优良的钝化效果。且聚苯乙烯磺酸薄膜制备时,工艺简单,不需要苛刻的条件,可在低温下进行,简单安全。
Claims (6)
1.一种硅片的表面钝化技术,其特征是,在硅片的表面制备聚苯乙烯磺酸薄膜,以实现对硅片表面的钝化。
2.根据权利要求1所述的硅片的表面钝化技术,其特征是,所述聚苯乙烯磺酸薄膜的厚度为纳米量级。
3.根据权利要求2所述的硅片的表面钝化技术,其特征是,所述聚苯乙烯磺酸薄膜的厚度为30nm-1000nm。
4.根据权利要求1所述的硅片的表面钝化技术,其特征是,所述聚苯乙烯磺酸薄膜通过旋涂法、蒸发法、印刷法或喷涂法来制备。
5.根据权利要求4所述的硅片的表面钝化技术,其特征是,所述聚苯乙烯磺酸薄膜通过旋涂法来制备;在硅片的表面制备聚苯乙烯磺酸薄膜的步骤如下:
a、配制聚苯乙烯磺酸水溶液;
b、将聚苯乙烯磺酸水溶液旋涂在硅片表面形成聚苯乙烯磺酸薄膜;
c、将步骤b中旋涂好的聚苯乙烯磺酸薄膜进行烘烤,去除聚苯乙烯磺酸薄膜内部的水分。
6.根据权利要求5所述的硅片的表面钝化技术,其特征是,步骤c中对聚苯乙烯磺酸薄膜进行烘烤的温度为100℃-200℃。
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WO2018090586A1 (zh) * | 2016-11-15 | 2018-05-24 | 河北大学 | 硅片的表面钝化技术 |
CN111599922A (zh) * | 2020-05-11 | 2020-08-28 | 暨南大学 | 一种调控pedot:pss薄膜组分纵向分布的方法及其薄膜与应用 |
CN111748241A (zh) * | 2020-06-19 | 2020-10-09 | 河北大学 | 太阳电池用的墨及其制备方法和应用 |
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CN103503121A (zh) * | 2011-05-26 | 2014-01-08 | 日立化成株式会社 | 用于形成半导体基板用钝化膜的材料、半导体基板用钝化膜及其制造方法、以及太阳能电池元件及其制造方法 |
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WO2015113560A1 (de) * | 2014-01-31 | 2015-08-06 | Hochschule Kaiserslautern | Vorrichtung und verfahren zur messung biologischer und/oder elektronischer eigenschaften einer probe sowie verwendungen derselben |
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WO2018090586A1 (zh) * | 2016-11-15 | 2018-05-24 | 河北大学 | 硅片的表面钝化技术 |
CN111599922A (zh) * | 2020-05-11 | 2020-08-28 | 暨南大学 | 一种调控pedot:pss薄膜组分纵向分布的方法及其薄膜与应用 |
CN111599922B (zh) * | 2020-05-11 | 2023-11-24 | 暨南大学 | 一种调控pedot:pss薄膜组分纵向分布的方法及其薄膜与应用 |
CN111748241A (zh) * | 2020-06-19 | 2020-10-09 | 河北大学 | 太阳电池用的墨及其制备方法和应用 |
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