CN1065951A - 硅平面工艺中新的磷扩散技术 - Google Patents

硅平面工艺中新的磷扩散技术 Download PDF

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CN1065951A
CN1065951A CN 91102309 CN91102309A CN1065951A CN 1065951 A CN1065951 A CN 1065951A CN 91102309 CN91102309 CN 91102309 CN 91102309 A CN91102309 A CN 91102309A CN 1065951 A CN1065951 A CN 1065951A
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diffusion
phosphorus
technology
silicon
deposit
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CN1037642C (zh
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陈炳若
何民才
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Wuhan University WHU
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Wuhan University WHU
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Abstract

本发明革新了硅平面工艺中的磷扩散工艺,它用 很低的温度淀积磷源,然后在适当高温下,在氧和氮 气氛中对硅片进行氧化,完成杂质的再分布。这样不 仅工艺简单、重复性好,而且能形成性能优良的PN 结,提高了产品的成品率。

Description

本发明是对硅平面工艺中磷扩散技术的一个革新。其操作条件完全不同于常规的磷扩散工艺。
在硅平面工艺中,磷扩散是一个关键工艺,它通常在高温下形成PN结,完成了对杂质分布的控制,然后在较低温度下进行氧化,对前面所形成的PN结的电参数进行适当的调整,并形成所需的二氧化硅层。(厦门大学《半导体器件工艺原理》P149)
由于上述磷扩散工艺是在高温高磷浓度下进行的,而磷原子比硅原子小,扩散过程容易产生很多缺陷,导致PN结不完整,使产品参数一致性差,成品率不高。
本发明提出了一个新的磷扩散技术,从而达到简化磷扩散工艺,提高产品性能和成品率,并改善产品参数的一致性的目的。
本发明的提出,是鉴于通常磷扩散工艺有上述弊病;并考虑到在相当宽的温度范围内,磷杂质在硅中具有近似相等的高的固溶度(美·H·F沃尔夫《硅半导体工艺数据手册》P160);很多磷源,特别是三氯氧磷(POCl3)液态源不需很高温度即开始分解(厦门大学《半导体器件工艺原理》P150),提供扩散掺杂的有效成分;此外还考虑到硅在氧化过程中磷杂质的分凝现象(美·H·F沃尔夫《硅半导体工艺数据手册》P492),因而磷扩散的予淀积在低温下进行是完全可能的。据此,我们提出了一种新的磷扩散技术,这个技术是用很低的扩散温度和很短的扩散时间先在硅片表面淀积很薄一层磷源,然后,在较高温度下进行限定表面源扩散,完成杂质的再分布,这样可以有效地避免高浓度磷的破坏作用。
本发明的优越性表现在:工艺简单,不需多次试片,节约了原材料;通源时间短,减小了毒性和环境污染;形成的PN结完好,明显改善了PN结的电特性;可控性和重复性都好,提高了成品率;硅片表面质量好,有利于下道工序。
具体方案如下:
1.按常规工艺对磷扩散前的硅片进行清洗和处理。
2.用不高于980℃的炉温进行磷源予淀积,淀积时间不多于15分钟。
3.在通氧和氮气的石英管中,用高于予淀积的温度进行氧化再分布,扩散时间不少于30分钟。

Claims (3)

1、一个进行磷扩散的新技术,其特征在于:将扩散分为二步,第一步进行磷源的予淀积,第二步推进扩散。
2、按权利要求1所述的磷源的予淀积,其特征在于:予淀积温度低于980℃,时间不超过10分钟。这些磷源可以是固态源,也可以是液态源。
3、按权利要求1所述的推进扩散,其特征在于将淀积了磷源的硅片放入氧和氮气氛保护的石英管中进行推进扩散,生成二氧化硅并完成杂质的再分布;其炉温高于予淀积温度,时间不少于30分钟。
CN 91102309 1991-04-13 1991-04-13 硅平面工艺中新的磷扩散技术 Expired - Fee Related CN1037642C (zh)

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CN 91102309 CN1037642C (zh) 1991-04-13 1991-04-13 硅平面工艺中新的磷扩散技术

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CN 91102309 CN1037642C (zh) 1991-04-13 1991-04-13 硅平面工艺中新的磷扩散技术

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CN1065951A true CN1065951A (zh) 1992-11-04
CN1037642C CN1037642C (zh) 1998-03-04

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100372132C (zh) * 2005-02-05 2008-02-27 江苏林洋新能源有限公司 长寿命晶体硅太阳电池的制造方法
CN101494251B (zh) * 2009-03-02 2010-06-09 苏州阿特斯阳光电力科技有限公司 一种制造精炼冶金多晶硅太阳能电池的磷扩散方法
CN101710570B (zh) * 2009-12-14 2011-05-18 天水天光半导体有限责任公司 半导体硅片磷扩散后涂胶前表面处理工艺
CN104576363A (zh) * 2015-01-15 2015-04-29 株洲南车时代电气股份有限公司 一种大功率整流管管芯的制作方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102005501A (zh) * 2010-10-15 2011-04-06 苏州阿特斯阳光电力科技有限公司 制造太阳能电池的磷扩散方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100372132C (zh) * 2005-02-05 2008-02-27 江苏林洋新能源有限公司 长寿命晶体硅太阳电池的制造方法
CN101494251B (zh) * 2009-03-02 2010-06-09 苏州阿特斯阳光电力科技有限公司 一种制造精炼冶金多晶硅太阳能电池的磷扩散方法
CN101710570B (zh) * 2009-12-14 2011-05-18 天水天光半导体有限责任公司 半导体硅片磷扩散后涂胶前表面处理工艺
CN104576363A (zh) * 2015-01-15 2015-04-29 株洲南车时代电气股份有限公司 一种大功率整流管管芯的制作方法
CN104576363B (zh) * 2015-01-15 2018-08-24 株洲南车时代电气股份有限公司 一种大功率整流管管芯的制作方法

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