CN106587029A - 一种三维结构石墨烯薄膜的制备方法及其制备用生长衬底 - Google Patents
一种三维结构石墨烯薄膜的制备方法及其制备用生长衬底 Download PDFInfo
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109384216A (zh) * | 2017-08-08 | 2019-02-26 | 株式会社爱发科 | 碳纳米结构体生长用cvd装置及碳纳米结构体的制造方法 |
CN109618428A (zh) * | 2018-10-12 | 2019-04-12 | 重庆墨希科技有限公司 | 一种基于石墨烯的高发射率的红外发射膜及其制备方法 |
CN112079350A (zh) * | 2019-05-26 | 2020-12-15 | 重庆诺奖二维材料研究院有限公司 | 一种大面积石墨烯薄膜的制备方法 |
Citations (5)
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EP1491497A1 (de) * | 2003-06-24 | 2004-12-29 | Graphit Kropfmühl AG | Verfahren zur Herstellung von expandiertem Graphit |
JP2009117094A (ja) * | 2007-11-05 | 2009-05-28 | Tokai Carbon Co Ltd | リチウムイオン二次電池負極材用炭素粒子粉末及びその製造方法並びにリチウムイオン二次電池負極材 |
CN102583349A (zh) * | 2012-02-24 | 2012-07-18 | 东南大学 | 一种石墨烯网的制备方法 |
CN103086360A (zh) * | 2011-11-01 | 2013-05-08 | 海洋王照明科技股份有限公司 | 一种连续制备石墨烯的方法 |
CN106185896A (zh) * | 2016-07-04 | 2016-12-07 | 中国科学院宁波材料技术与工程研究所 | 三维石墨烯及其复合材料的制备方法 |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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EP1491497A1 (de) * | 2003-06-24 | 2004-12-29 | Graphit Kropfmühl AG | Verfahren zur Herstellung von expandiertem Graphit |
JP2009117094A (ja) * | 2007-11-05 | 2009-05-28 | Tokai Carbon Co Ltd | リチウムイオン二次電池負極材用炭素粒子粉末及びその製造方法並びにリチウムイオン二次電池負極材 |
CN103086360A (zh) * | 2011-11-01 | 2013-05-08 | 海洋王照明科技股份有限公司 | 一种连续制备石墨烯的方法 |
CN102583349A (zh) * | 2012-02-24 | 2012-07-18 | 东南大学 | 一种石墨烯网的制备方法 |
CN106185896A (zh) * | 2016-07-04 | 2016-12-07 | 中国科学院宁波材料技术与工程研究所 | 三维石墨烯及其复合材料的制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109384216A (zh) * | 2017-08-08 | 2019-02-26 | 株式会社爱发科 | 碳纳米结构体生长用cvd装置及碳纳米结构体的制造方法 |
CN109618428A (zh) * | 2018-10-12 | 2019-04-12 | 重庆墨希科技有限公司 | 一种基于石墨烯的高发射率的红外发射膜及其制备方法 |
CN109618428B (zh) * | 2018-10-12 | 2021-07-06 | 重庆墨希科技有限公司 | 一种基于石墨烯的高发射率的红外发射膜及其制备方法 |
CN112079350A (zh) * | 2019-05-26 | 2020-12-15 | 重庆诺奖二维材料研究院有限公司 | 一种大面积石墨烯薄膜的制备方法 |
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Address after: No. 518-5 Zhonghui Road, Standard Factory Building of Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi City, Jiangsu Province, 214000 Patentee after: WUXI GRAPHENE FILM Co.,Ltd. Patentee after: Changzhou sixth element Semiconductor Co., Ltd Address before: 214174 No. 518-5 Zhonghui Road, Chang'an Industrial Park, Huishan Economic Development Zone, Wuxi, Jiangsu Province Patentee before: WUXI GRAPHENE FILM Co.,Ltd. Patentee before: Wuxi sixth element electronic film technology Co., Ltd |
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