CN106571328B - The locking method of substrate and the locking system of substrate based on on-line treatment - Google Patents
The locking method of substrate and the locking system of substrate based on on-line treatment Download PDFInfo
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- CN106571328B CN106571328B CN201610515929.7A CN201610515929A CN106571328B CN 106571328 B CN106571328 B CN 106571328B CN 201610515929 A CN201610515929 A CN 201610515929A CN 106571328 B CN106571328 B CN 106571328B
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- substrate
- chuck plate
- locking
- chuck
- plate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
Abstract
The present invention discloses a kind of locking method of the substrate based on on-line treatment and the locking system of substrate, it is intended to provide the locking method and locking system more simplified, and especially providing a kind of the steadily locking substrate and can be easy to solve locking novel locking method and locking system.For this purpose, substrate and the conductive plate of chuck plate is made to carry opposite polarity charge, to make the electrostatic attraction of strength feed through to the interface of abutting and cause strong locking.Even if interface is amplified in the case where substrate is close to chuck and is observed, it can still find interface out-of-flatness and present a kind of irregular concavo-convex, therefore will have the part to fit like a glove and the part in phase from state, the electrostatic attraction being wherein close at part is extremely strong, so as to realize that strength is locking.In this regard, charging substrate and conductor plate and being close to, to inspire extremely strong locking.The separation for the interface that substrate is close to conductor plate is minimum, therefore strong with the effect of square Coulomb force being inversely proportional of distance.
Description
Technical field
The present invention relates to one kind in manufacture semiconductor, Organic Light Emitting Diode (OLED), display, solar battery, photograph
For clamping the locking method and locking system of substrate or wafer in the manufacturing process of the various thin-film components such as bright device.
Background technique
In order to make semiconductor chip or display panel, in the transparent material that film is deposited on to Silicon Wafer or glass etc
In the technique of substrate, a kind of chuck (chuck) for clamping substrate is needed.Substrate is clamped using chuck and arrives base plate transfer
Each chamber, and substrate is held with the state not rolled, so that film is formed uniformly in substrate.This chuck is also applied to
Semiconductor crystal wafer.
Substrate chuck is required to steadily clamp substrate, and requires to be easy to locking from the substrate solution for completing process
(dechuck), and substrate must not be caused to damage.
As the chuck for proposing and being used so far, including following various: utilizing the electrostatic chuck (South Korea of electric attraction
Publication the 10-2010-0043478th)；Utilize the bonding chuck for the adhering part for being coated with binder；It is inhaled using vacuum
The vacuum chuck of attached power；Electric storage means chuck using static behaviour gravitation, and is fabricated to electric storage means form and is used for locking substrate.Though
So propose this many kinds of chucks, however in actual process, with exquisite structure fabrication at chuck go out because of use environment
Now abrasion etc., therefore its lost of life.In particular, large-area substrates are bent in overturning its whole inversion operation with chuck
Deformation etc., therefore there are problems that needing to frequently replace expensive chuck plate.
Moreover, before and after deposition procedures execution, it will implement plasma cleaning operation, at this point, making base because of plasma
The surface of plate and chuck plate strength is charged, then in the presence of the inconvenience for needing to go electricity, if not removing electricity, due to substrate and chuck
The electriferous state of plate and attach substrate and chuck plate locality strength, to can not solve locking, or there is the indoor dirt of chamber
Contaminate the problem of object contamination is to substrate.
Summary of the invention
Therefore, it the purpose of the present invention is to provide a kind of brand-new locking method and locking system, realizes more into one
The summary of step, and can the steadily locking substrate, and be easy to solve locking.
Also, the present invention is intended to provide the brand-new locking method and locking system there is low air release property and can be in height
Temperature is lower to be used, and excellent durability, so that having the advantages that can maintenance cost saving and production cost.
In view of above-mentioned purpose, charge substrate in the present invention, and it is opposite to be incuded generation polarity by means of charged substrate
The conductive plate of charge be used as chuck plate, or so that insulation board is carried opposite polarity charge and use it as chuck plate, from
And cause strong electrostatic attraction in interface.
If that is, the inventors of the present invention recognize even if amplifying its interface in the case where substrate is close to chuck
And to observe then can still find interface out-of-flatness and a kind of irregular concave-convex planar is presented, therefore will have and fit like a glove
Part and mutually from part, wherein be close to part place electrostatic attraction will be extremely strong, so as to realize strongly it is locking.Based on this
One understanding, charges the substrate as locking object in advance, and the substrate is tightly attached to the conductor plate of ground connection, thus in chuck
Induction generates opposite polarity charge, and it is locking thus to cause strength.This is because the interface that substrate is mutually close to conductor plate
The separation at place is minimum, therefore the effect for the Coulomb force being inversely proportional with square distance is strong.
The present invention provides a kind of locking method, charges the front of substrate or the back side by means of promoting charged elements, and
The back side of substrate is attached to the chuck plate of conductor plate form.
In aforementioned present invention, can on the conductor plate covering dielectric scumbling overlay film.
In aforementioned present invention, by substrate and the polarity charge opposite with substrate back can be carried by making dielectric chuck plate
It is carried out with chuck plate locking.
In aforementioned present invention, in order to promote to carry electrostatic, it can be used and generate method, the plasma treatment side of friction electricity in substrate
Method or ion-beam treatment method.
Moreover, in order to which the solution for realizing charged substrate and conductor plate is locking and can take following measure in the present invention: in card
Pin hole is formed in plate, for the pin hole for passing through solution card rationed marketing, which supports the substrate, accordingly applies mechanical force
It is added on pin and to execute solution in a manner of promotion locking, and can concurrently blow gas if necessary, or utilize ion
Device carries out electricity, also or by external voltage is applied to chuck plate simultaneously.
In aforementioned present invention, the solution in order to realize substrate and conductor plate is locking, and small gas can be formed in chuck plate
Injection hole or gas inject slot.
In addition, the present invention provides a kind of locking method of substrate, substrate is set to carry electrostatic, and metal foil is attached to electrification
Substrate, and the locking substrate using electrostatic chuck or electric storage means chuck.
Also, the present invention provides the locking method of a kind of substrate and chuck plate, which is characterized in that when by large-area substrates
It is placed in during chuck when implementing mechanical alignment operation, in order to prevent substrate part and chuck phase caused by the having a down dip of substrate
It mutually attaches, or ensures mechanical alignment accuracy rate to weaken the electrostatic attraction between substrate and chuck plate, disposed in substrate
External voltage is applied to chuck plate and is aligned in period, is then carried out substrate and chuck plate using the electrostatic of substrate
It is locking.
Moreover, the present invention provides a kind of locking method of solution, it is intended to release the substrate and card formed using the above method
The locking state of plate, makes chuck plate have pin hole thus, which is available for the pin of supporting substrate across pin is arranged at
Frame and liftable, and it is arranged in the lower section of chuck plate, in order to separate substrate with chuck plate, the pin rises and passes through institute
It states pin hole and supports the substrate, and separate substrate with chuck plate and increase substrate.
Also, aforementioned present invention provides a kind of locking method of the solution for separating the substrate and chuck plate, and feature exists
In used chuck plate has for blowing the gas injection hole or gas injection slot that gas passes through, so that gas is blown from
To substrate and chuck plate.
Moreover, the present invention provides a kind of locking method of substrate, which is characterized in that make the surface or two surfaces of substrate
Electrostatic is carried, and metal foil is attached to the substrate surface of electrification, induction generates polarity in metal foil and substrate surface carries
Opposite charge charge and realized and attached by means of electrostatic attraction, and the substrate of metal foil will be pasted with using electrostatic chuck
It carries out locking.
Also, the present invention provides a kind of locking method of substrate, which is characterized in that makes the surface or two surfaces of substrate
Electrostatic is carried, and metal foil is attached at charged substrate surface, induction generates what polarity was carried with substrate surface in metal foil
The charge of opposite charge and realized and attached by means of electrostatic attraction, the surface of metal foil constitutes the first pole plate of capacitor, and right
The second opposite pole plate is arranged in it, and attaches dielectric in the lower surface of the second pole plate, wherein the dielectric is made to be arranged in first
Between pole plate and the second pole plate, and between the first pole plate and the second pole plate apply mutually different voltage to provide potential difference,
With the substrate locking and forming electric storage means.
The present invention also provides a kind of substrates and the locking of chuck plate to set Xie Fangfa (that is, locking-Xie Kading method), feature
It is, forms electrostatic on a surface of substrate or two surfaces, and the substrate for carrying electrostatic is placed in chuck plate, the chuck
Plate is made of conductor or is made of the conductor with insulator coating film, accordingly using the charge for incuding generation in chuck plate and
It is by means of electrostatic force that substrate and chuck plate progress is locking, and in order to realize that the solution of substrate and chuck plate is locking, by individually answering
One of with the following method method or a variety of methods in the following method of Parallel application and solve substrate with chuck plate
It is locking: to blow gas utilization method, gas is blown into substrate and chuck plate；Method by driving ion generator to remove electricity；
The method of repulsion is provided to substrate and external voltage is applied to chuck plate；Machinery solves locking method, is arranged in chuck plate
Pin hole, which, which can allow, is used to support the pin of substrate across and making to solve card rationed marketing and pass through via pin hole, thus with machinery side
Formula realizes that solution is locking.The chuck plate is formed with: salient point array, has multiple salient points embossed structure outstanding in the form of sun is carved.
Then, it is engaged in the state of chuck plate in substrate, is injected into electrical body smoothly between substrate and chuck plate, so that solution
It is locking to be easily achieved.
According to the present invention, can the steadily locking substrate, and be easy that solution is locking, and by plasma cleaning process
Substrate may be directly applied to locking operation without releasing electriferous state i.e., therefore extremely easy and effective.
Moreover, the locking method and locking system in the present invention are different from the existing price height for forming structure comprising electrode
High electrostatic chuck, only by means of easy metal plate or the metal plate coated with insulating film itself and substrate is locking, because
This chuck itself is not necessarily to the electrode of micro-structure, and then chuck cost of manufacture is cheap, but also can extremely forcefully it is locking live
Substrate, and because of its simple structure, therefore it is low in the indoor outgassing rate of vacuum chamber, and can use at high temperature, and durability is also excellent
It is good therefore easy using the maintenance management of the system of chuck, so having the advantages that can maintenance cost saving and production cost.
Detailed description of the invention
Fig. 1 and Fig. 2 is the schematic cross sectional views for illustrating locking principle of the invention.
Fig. 3 is the construction for indicating chuck plate for carrying out the present invention and the solid of the load pin for loading the substrate
Figure.
Fig. 4 is the cross-sectional view of the situation for illustrating to charge substrate and using ion generator.
Fig. 5 is the cross-sectional view of the situation for illustrating to charge substrate and using plasma.
Fig. 6 is the perspective view of the situation for illustrating to charge substrate and using frictional electricity.
Fig. 7 is the perspective view for indicating to cause the friction brush of frictional electricity.
Fig. 8 is the perspective view for illustrating to promote the method for electrification by causing frictional electricity on the way in base plate transfer.
Fig. 9 is the cross-sectional view for illustrating the fit process of substrate and chuck plate.
Figure 10 is the cross-sectional view for illustrating the separation process of substrate and chuck plate.
Figure 11 is for illustrating in substrate and chuck plate separating technology using the cross-sectional view of the situation of ion generator.
Figure 12 is the cross-sectional view for illustrating the air-supply situation in substrate and chuck plate separating technology.
Figure 13 is the cross-sectional view for illustrating to apply alive method from outside in substrate and chuck plate separating technology.
Figure 14 has been expressed as substrate easy to carry out and chuck plate separation process and salient point array is applied to chuck plate
The salient point type chuck plate perspective view of situation.
Figure 15 is the cross-sectional view of salient point type chuck plate.
Figure 16 is to indicate substrate engaging in the cross-sectional view of the state of salient point type chuck plate.
Symbol description
10: substrate 60: processing chamber
70: fixation member 80: electrode
90: power supply 100: chuck plate
110: pin hole 120: gas injection hole
130: gas injects slot 170: salient point type chuck plate
180: salient point 190: two-sided binder
Specific embodiment
Hereinafter, by reference to attached drawing and the preferred embodiments of the present invention are described in detail.
Fig. 1 and Fig. 2 is the schematic cross sectional views for illustrating locking principle of the invention.
Promote charged elements 20 using electrostatic and the back side of substrate 10 is made to carry electrostatic, and the chuck plate that will be made of conductor plate
30 are attached at the back side of charged substrate, then the charge for generating polarity and substrate back carrying will be incuded on the interface of chuck plate 30
Opposite free charge is then strongly mutually attached by means of electrostatic attraction.
At this point, if the boundary face of substrate 10 and chuck plate 30 amplified, as shown in the figure in ellipse, it is seen that surface is simultaneously
Non-fully smooth state but be in rough state.That is, if the size in molecular level is approached, substrate 10 with
Many gaps are irregularly placed in intermediate and abutted by chuck plate 30 between each other.It as needed, can also be on planarizing substrate
It artificially forms slight curves and makes chuck plate.At the position that substrate is mutually abutted with chuck plate and is close to completely, conductor
Charge be discharged into substrate, charge may not also be then carried at this, but since substrate is insulator, at closed position
It is mobile that surrounding has no charge, therefore will not cause further chain electric discharge, and since the area at closed position is much smaller than
Entire area, therefore will have electrostatic force in most surface area.Based on square library being inversely proportional with charge spacing
The gravitation of logical sequence power is relatively strong on the whole, especially around the position being close to completely because apart from it is minimum due to reach extremely strong.The present invention
In recognize the interfacial structure of this microscopic scale, thus propose it is a kind of by means of charging caused by electrostatic force and make substrate 10
The mutually fit technical solution with chuck plate 30.
Substrate 10 can be the glass, silicon or polymer material that can carry electrostatic, and chuck plate 30 can be conductor plate sheet
Body either conductor plate is coated the material of thin layer dielectric (also referred to as insulator) coating film.It is thin when being coated on conductor plate
When layer dielectric (such as ceramics, Teflon etc.), also induction generates the free charge of dielectric dipole and its beneath conductor,
It therefore can be locking with substrate by means of electrostatic attraction.Moreover, making to be coated with dielectric chuck using charged elements are promoted
The dielectric surface of plate carries electrostatic and charges surface, and is situated between accordingly by means of electrostatic attraction by substrate back with having electricity
The chuck plate of matter coating film is attached.In the chuck plate 30 that will be attached, also promote to carry pole using charged elements are promoted
The property electrostatic opposite with the electrostatic of substrate back, abuts substrate 10 mutually with chuck plate 30, so also can be by means of
Strong electrostatic attraction and realize mutual attaching.If chuck plate is insulator, the above method is effective, however for being changed to conductor
For situation, due to using charge inducing, unnecessarily implement to promote charge process there is no need to real.
It is shown with reference to Fig. 2 during making the back side of substrate 10 be attached at chuck plate 30 and carrying electrostatic
The situation for keeping chuck plate 30 electrically isolated and the corresponding distribution of charges of situation institute being connect with extraneous the earth.
When chuck plate 30 is grounded, charge is supplied by the earth, therefore only in the intersection of substrate 10 and chuck plate 30
Charge is distributed with.When chuck plate 30 by it is electrically isolated when, based on inside the chuck plate 30 as conductor charge redistribution, have a common boundary
The polarity charge opposite with substrate 10 is distributed on face, the back side of chuck plate then carries the polarity of the charge of polarity and the carrying of substrate 10
Identical charge.However, no matter which kind of situation, act on electrostatic force between substrate and chuck plate 30, and work as the thickness of chuck plate 30
When spending sufficiently thick, electrostatic force almost indifference.Therefore, chuck plate 30 of the invention both can electrical ground and uses, can also be electric
Completely cut off and uses.This characteristic has the advantages that make the construction of actual process device flexible.
Fig. 3 indicates the construction of chuck plate 30 for carrying out the present invention and the load pin for loading the substrate 10
300。
The chuck plate 100 of Fig. 3 has pin hole 110, the pin using the plate with plane identical with substrate 10 as substrate
Hole 110 passes through for load pin 300, which can support the substrate when loading the substrate 10.The cloth in chamber
The substrate loading part that load pin 300 is arranged at load pin frame 310 is set, chuck plate is arranged on substrate loading part, and
And substrate is moved in chuck plate, if in this way load pin 300 rise and pass through the pin hole 110 of chuck plate 100 and by base
Plate is loaded.Load pin 300 closes substrate 10 and chuck plate 100 by decline in the state of supporting substrate 10
Body.About such substrate loading process, will illustrate in the relevant portion of Fig. 9.
Some embodiments of chuck plate self construction are shown in Fig. 3.I.e., comprising: in pure metal plate or be coated with electricity
Be formed on the metal plate of medium the pin hole 110 for load pin construction 100, furthermore have minute gas injection hole 120
Construction 150 or with gas injection slot 130 construction 160.Why minute gas injection hole 120 or gas injection are formed
Slot 130, be in order to during the solution of substrate and chuck plate is locking by inject the gas by means of blow act on and more
Add and easily realizes that solution is locking.
Pin hole 110 is formed in the dead space (for example, by cross path of frame and center) without film, spreads
The small gas injection hole 120 of entire chuck plate is formed as the spacing between gas injection hole 120 and is in several millimeters (mm) extremely
(for example, 1mm to 20mm) within the scope of tens of milliseconds (mm).In order to carry out the injection of gas ideally, gas injects slot
130 be formed as follows it is multiple: throughout chuck in the form of starting from the one side edge of chuck plate surface and terminate in other edge
The entire surface of plate and execute negative quarter formula and excavate.The spacing between gas injection slot 130 is set to be in several millimeters (mm) to tens of milliseconds
Within (for example, 1mm to 20mm).
Fig. 4 indicates the situation that ion generator is used as the unit for promoting the back side of substrate 10 to charge.
When substrate 10 is static or during transfer, the electrostatic supplied by the ion generator for being located at the lower section of substrate 10
And promote to carry electrostatic in a non contact fashion.If substrate is placed in stationary state and makes its electrification, pin is supported in substrate
Implement electrostatic in the state of 50 supports and promotees electrification.Supporting pin 50 is made by insulator, to thoroughly do away with the electrostatic in the contact of substrate 10
It influences.The position of ion generator 40 is perhaps fixed or if necessary by combining driving portion to enable lateral probe movement
It realizes.In the case where lateral probe movement can be achieved, the number of ion generator needed for making the front uniform charged of substrate can be reduced
Amount.When promoting electrification during base plate transfer, transfer roller 55 is made with insulating material, to thoroughly do away with for substrate electrostatic
It influences.Supporting pin 50 or transfer roller 55 as insulator can be made by the PEEK (polyether-ether-ketone) etc. as functional plastic.
Even with make in ion generator 40 substrate front and back all charge, will not to by means of electrostatic attraction and with
Chuck plate realizes locking throw into question.
Fig. 5 indicates the situation for charging the back side of substrate 10 using plasma treatment.
Substrate 10 is arranged in a pair for being used to generate plasma in 60 inner utilization fixation member 70 of processing chamber
Between electrode 80, and discharge gas is injected, and generate plasma using plasma generation power supply 90, so that substrate
10 back side electrification.Wherein, substrate holding part 70 can be supporting pin, fixture, supporting mechanism object.It will be by means of plasma
And the substrate 10 for charging the back side is placed in chuck plate, and substrate is attached at chuck.In the case, the front of substrate 10
It can be charged with the back side, this is locking to the electrostatic between chuck plate not to throw into question.
In particular, the plasma treatment for substrate 10 can be in the process for film to be deposited on substrate for cleaning institute
It states the purpose of substrate and implements, therefore plasma cleaning process can be used as the charge process for the locking substrate and chuck plate
And naturally have both.
Fig. 6 is the perspective view of the situation for illustrating that substrate is promoted to charge using frictional electricity.
In order to charge the back or front of substrate 10 using electrostatic, frictional electricity is utilized.It can as friction element 200
It utilizes following friction brush: filament is fixed on outside cylindrical shaped body；The substance of film morphology is wrapped in cylindrical shaped body
It is external；Or the caliper portion of the thin layer of the substance of film morphology is fixed on to the friction brush of cylindrical shaped body.The tool of friction brush
Body example will be illustrated below.
That is, for the substrate received is transmitted from previous process, being utilized during executing various processes to substrate
Substrate securing part 260 (such as retainer etc.) and prevent substrate mobile, and by revolving friction element (friction brush or friction roller)
Then the back side of substrate is made to generate the electrostatic based on friction.Then, the back side of substrate will be charged.It can be by adjusting friction element
200 speed of rotation and adjust the frictional energy for being supplied to substrate per unit time, and due to the friction electricity of carrying and friction
Energy is proportional, thus as needed the locking substrate activity time and adjust the speed of rotation.In order to make the back side of substrate
Equably frictional electricity moves horizontally friction element or substrate with preset distance and implements friction work by stage (multi-step)
Sequence.
The material of friction element preferably uses following substance: compared with the material of substrate, in triboelectric series
In (Triboelectric series) as far as possible remote away.If then friction element can be used for example, substrate is glass material
PET, polyimides (polyimide), PTFT etc..In order to eliminate the electrostatic of friction element carrying, the electrostatic that will be made of conductor
It eliminates plate 250 and is arranged in the position contacted with friction element.
Fig. 7 is the perspective view for being shown specifically the friction element that can cause frictional electricity.
Friction element 200 is fixed with filament 203 or film morphology 204,205 in external attach of cylindrical-shaped main body 201
Friction material, and the centrally located place of friction-driven axis 202 for being connect with driving portion.The friction portion being in contact with substrate can be by
The implementation forms such as filament 203, friction film 204, vertical-type friction film 205 that rub are realized.Cylindrical-shaped main body 201 and friction are driven
Moving axis 202 can be used stainless steel or High-strength light-weight plastics and make.
Fig. 8 is the perspective view for illustrating to promote the method for electrification by causing frictional electricity on the way in base plate transfer.
That is, being illustrated to the method for charging substrate by causing friction during base plate transfer.
When the back side of substrate 10 being arranged in contact in multiple cylinder-shaped friction elements 200 and by making friction element 200
When rotating and the speed of rotation being made to reach predeterminated level or more, it will it is slid between 10 back side of substrate and friction element 200,
And the effect that substrate back is charged by friction can be obtained while substrate 10 is obtained and being transferred.
Both multiple cylinder-shaped friction elements 200 can have only been arranged below substrate 10 and had been constituted, it can also be by multiple cylinders
Shape friction element 200 and transfer are constituted with the compound arrangement of roller 270.
When starting transfer roller 270, only by the way that cylinder-shaped friction element 200 standing can also be caused frictional electricity.
However, in order to more quickly and effectively cause frictional electricity, it can be along the opposite direction of the direction of rotation of transfer roller 270
And rotate friction element 200 with set rate, so as to maximize friction effect.If by base plate transfer direction towards advance
Change and rub with direction of retreat, then can in a limited space in promote the back side uniform charged of substrate.
Also, if cylinder-shaped friction element is made as conductor, and applies voltage to it, then make substrate and cylindrical shape
Friction element contacts and rotates cylinder-shaped friction element, then substrate will charge.In the case, the charging efficiency of substrate is excellent
It is good.
Moreover, in order to form electrostatic in a substrate, it can be used that conductor plate is applied voltage and is contacted with substrate and be applied
The method of the conductor plate of voltage.If applying the DC voltage of 100V to 10kV in conductor plate, and it is contacted with substrate and leads
Body plate can then be formed uniformly electrostatic in substrate.Here, conductor plate no doubt can be the conductor plate for constituting chuck plate, however
The conductor plate provided as special rush charged elements is provided.
Fig. 9 indicates the situation that substrate 10 is placed in chuck plate 100, and Figure 10 expression separates substrate 10 from chuck plate 100
(dechucking) situation.
In chuck plate 100, in being formed as predetermined through hole with the consistent region in dead space independent of deposition
Pin hole 110, and the load pin 300 that will be used for substrate placement is enable to pass through.What chuck plate 100 was glossily ground by surface
Conductor metal production.As described above, chuck plate 100 can thinly (10nm to 100 μm) coated ceramic etc on a metal plate
Dielectric.
In the state of making load pin 300 rise to predetermined altitude by the pin hole 110 of chuck plate 100, transfer is utilized
The substrate that the back side is charged is placed in load pin 300 with robot etc., then by substrate and declining load pin 300
10 are steadily placed in chuck plate 100.If substrate 10 is rehoused, the surface induction of chuck plate 100 generate polarity with
Substrate back opposite charge or electric dipole, and generated by means of incuding on the surface at 10 back side of substrate and chuck plate 100
Charge between gravitation and so that substrate 10 is attached at chuck plate 100.
Load pin 300 is made by insulator, or insulator lid is covered in terminal part in the case where being made by metal
Divide and insulate, to prevent the electrostatic influence when being in contact with substrate.
For the separation by means of mechanical force using solution card rationed marketing 320, make the structure shape by load pin 300 etc
At solution card rationed marketing 320 begun to ramp up under chuck plate 100, and pass through pin hole 110 and to substrate 10 apply mechanical force, thus
Separate substrate 10 from chuck plate 100.Solution card rationed marketing 320 is also disposed on frame 330, and makes with it of insulator, is not so good as
It is preferably made of conductor locking in favor of solving.According to circumstances, load pin can also be used as solution card rationed marketing.However, can also
Not utilize unfreezing rationed marketing 320, but it is locking by means of other units execution solution, when using other separation methods, Xie Kading
Pin can be used as the complementary unit for separating substrate.
Figure 11 is indicated by means of going the solution of electric unit locking.
Irradiation goes electricity to neutralize electrostatic with lamp 400, to eliminate as the electrostatic force for attaching power, then makes to solve in card rationed marketing
It rises and separates.As the light source for removing electric lamp, using vacuum ultraviolet (VUV；vacuum ultraviolet).Vacuum ultraviolet
Line is that a kind of wavelength is 200nm ultraviolet light below, is effectively absorbed and realized by air molecule ionization, and by means of generation
Ion and neutralize electrostatic.Vacuum ultraviolet is 10 in vacuum degree-4Under conditions of Pa also can with residual gas effecting reaction and
Neutralize electrostatic.For separating large substrate, can substrate top and left and right arrangement is multiple that electricity is gone to eliminate electrostatic with lamp 400
Power, and according to circumstances only can also remove electricity lamp 400 in the right and left of substrate or side side setting and use.
Figure 12 is the cross-sectional view of the air-supply situation in the separating technology for illustrating substrate and chuck plate.
When application is formed with the minute gas injection hole 120 helped to the injection for blowing gas or gas injects slot 130
When chuck plate 150,160, Xie Kading process can be blowed by means of gas and remove electricity and the Xie Kading by means of solution card rationed marketing.
It is weak using air supply process as one of substrate-chuck separation method embodiment when implementing process in a vacuum
Change the electrostatic force between substrate-chuck, and makes to solve card rationed marketing rising and separate substrate from chuck.Include in the gas being blown from
There is considerable ion, then neutralizes electrostatic and weaken electrostatic force.Substrate-chuck is effectively injected in order to make to blow gas
Attached area, can give a farfetched interpretation in chuck plate 100 and to form multiple diameters is 1mm micropore below i.e. gas injection hole 120, Huo Zhe
100 surface of chuck plate forms gas injection slot 130 and this structure of application (referring to Fig. 3).In order to make to process easy to carry out and make
Gas injection ideally carries out, make gas injection slot 130 cross the surface of chuck plate and excavate 10 μm of formation width or more,
1mm or less and height are 10 μm or more, 10mm following range of slot.As gas is blowed, air, N can be used2, He etc..?
After deposition terminates, chuck plate 100 is placed on chuck plate support portion 510 in the inside of vacuum chamber 500, is led in this case
It crosses and blows gas described in being an externally injected into and implement separation process.
Figure 13 is the cross-sectional view for illustrating to apply alive method from outside in substrate and the separating technology of chuck plate.
Based on the method to the application polarity of chuck plate 100 external voltage identical with the polarity of electricity that substrate 10 carries, electrostatic is neutralized simultaneously
Solve locking.It is neutralized in this case as well, it is possible to implement the electrostatic based on the injection for blowing gas, or can be in gas
It is executed parallel while blowing locking by means of the mechanically solution for solving card rationed marketing.It carries out solving locking method using solution card rationed marketing
It can be blowed with gas is based on, ion generator (ionizer) goes the other modes of electric, external voltage application etc. to be used in combination.
It, would generally be in chuck surface before substrate is placed in chuck when implementing deposition procedures using chuck assembly
Execute the mechanical alignment (alignment) for being aligned the position of substrate.At this point, the accuracy rate of alignment is taken into account, it is tight in substrate
It forces and mechanically moves the substrate or chuck plate in the state of the surface of chuck plate, to implement to be aligned.For big
For area glass substrate, since substrate has a down dip larger, the part that has a down dip of substrate will contact with chuck plate or positioned at therewith
Extremely close to place.It therefore, may having a down dip because of substrate during mechanical alignment if using chuck assembly of the invention
The electrostatic gravity gravitation that is subject under the action of chuck plate of part and cause to be aligned accuracy rate decline.It in substrate is but big in the present invention
In the case where area glass substrate, within the period for disposing the substrate, substrate is attached before mechanical alignment finishes in order to prevent
Following method is provided in chuck plate, or in order to weaken the gravitation between substrate and chuck plate, is held in substrate placement process
Scheduled voltage is applied to chuck plate in the row period, which is presented polarity identical with the electrification polarity of substrate.
The external voltage preact for being applied to chuck plate is loaded at the time of pin is supported and begun to decline in substrate and continues to maintain,
And voltage is eliminated after mechanical alignment finishes, and substrate is then being fully disposed in chuck plate and by means of electrostatic attraction
And it is attached.
Hereinafter, the related integrated artistic of/Xie Kading locking to substrate according to the present invention is arranged and is illustrated.
When substrate is put into electrostatic rush electrification processing line with robot by base plate transfer, electrostatic promotees Charging system starting
And charge substrate back.The substrate of electrification is passed in load pin by means of transfer robot again, at the load pin
In the state risen in chuck plate, by the decline of the load pin, substrate and chuck are fit.When substrate is fixed in chuck
When, it will deposition procedures are executed, the substrate finished and chuck is deposited and base is then realized by substrate-chuck separation method of multiplicity
The separation of plate.Isolated substrate is made into display, semiconductor element by a variety of additional process.Electrostatic as described above
Charge process, substrate placement process, substrate-chuck zoarium process, substrate-chuck separation process etc process no doubt can be
Implement under normal pressure or vacuum environment, however considers the stability of electrostatic and being associated between first process, subsequent handling
Property, more preferably implement in vacuum environment.
Substrate is locking, in Xie Kading process, can be in metallic conductor card in order to reduce scratch or the abrasion of substrate and chuck
Insulator film is coated in plate and is used.For insulator film, if thickness is excessively thick, locking power will reduce, because
This preferably uses 100 μm of film morphologies below.As the example for the insulating material that can be applied to this, can enumerate aluminium oxide,
The ceramics of the wear resistances such as yttrium oxide, zirconium oxide, silicon nitride, chemical resistance and excellent heat resistance.
As the variation of above-described embodiment, chuck plate can be made as insulator.
The back side of substrate can be charged based on method described in embodiment as described above, but also can be using such as lower section
Method: promote the used frictional electricity of electrification using substrate, ion occurs, the methods of plasma treatment and making is made by insulator and
At chuck plate front carry polarity and substrate back opposite polarity electricity, substrate is then placed in insulator chuck
Plate, to be attached by means of the gravitation between the electrostatic that charges respectively.
For example, the back side of glass substrate can be made to carry positive ("+") charge, and utilize Al2O3Etc ceramics and make chuck
Plate, and so that chuck plate is carried negative ("-") charge using ion generator, so as to which glass substrate is attached at chuck plate.Pottery
Ceramic material, can also be by the polymeric material of other excellent heat resistances either by the material that constitutes of metal oxide of multiplicity
Material, Teflon etc. are elected to be chuck plate material.
Above embodiment mainly illustrates in a manner of promoting substrate back to charge, however can also should be in a like fashion
And make the front electrification of substrate, or charge the positive back side of substrate, and be attached at chuck plate in such a way and implement.
Also, the electrostatic rush charged method for being applied to substrate front side and the back side also completely can be using the mutual not phase of compound use
The combined type of same two methods.For example, the method that is charged by friction can be applied to the back side in identical substrate, and then to front
It can use ion generator and promote to charge.
In addition, following change also can be implemented during the electrostatic using substrate promotees the utilization of the attaching concept of electrification
Shape embodiment.
That is, promoting electrification by electrostatic as described above is attached at substrate for super thin metal foil, and for by means of electrostatic
Promote electrification and be pasted with metal foil substrate and using common electrostatic chuck or capacitor chuck etc. progress it is locking, to realize
Substrate clamping and transfer.Capacitor chuck is disclosed in Korean granted patent the 10-1222328th, and electrostatic chuck is disclosed in South Korea
Publication the 10-2015-0005864th, Korean granted patent the 10-1467107th, Korean granted patent 10-
In No. 1319765 etc., these are available.The content of the patent gazette or Publication is being intended to using the field of the invention
In be programmed into it is for reference in the application.
Capacitor chuck applies following chuck: will be promoted the metal of electrification and the substrate that is pasted with metal foil by means of electrostatic
First pole plate of the foil face as capacitor, and the second opposite therewith pole plate is set, wherein the lower surface of the second pole plate is pasted with
Dielectric, the dielectric are arranged between pole plate.Mutually different voltage is applied to mention to the first pole plate and the second pole plate
Electric storage means is formed for potential difference, to substrate be carried out locking.
In addition, in the present invention, when promoting to carry electrostatic and by means of electrostatic attraction that substrate and chuck plate progress is locking
When, it is locking in order to be easier to solve, as shown in figure 14, a kind of salient point type chuck plate 170 is constructed, wherein being applied in chuck plate
Bump structure.
That is, with only by the chuck plate that base metal plate is constituted compared with, in order to make to solve it is locking be easier realize, can be in chuck plate
Surface application be formed with the structure of salient point array.Salient point array can be a kind of embossed structure, and can be multiple salient point shapes
The structure of form is carved as sun.
Salient point array as described above is easy to utilize in spray deposited device, sputter deposition apparatus, CVD deposition device etc.
Scheduled exposure mask and formed, when the size of salient point 180 is larger, by a kind of directly cutting bump structure and be attached at chuck plate
The mode on surface can also constitute salient point array.Moreover, it is also possible to by the conductor piece attached by cutting bump structure or absolutely
Edge body piece and its foil or plate or the embossed conductor piece/sheet insulators for being formed as sun quarter form and its foil or plate are attached at chuck
Plate and form salient point array.If there are salient point arrays on the surface of chuck plate, as shown in figure 16, it is placed in when charged substrate
When chuck plate, it will set to stay and arrange substrate with the spacing of the height equal quantities of salient point array.The height of salient point array is sufficiently small
In each side length of chuck plate, then incude in the electrostatic of substrate and chuck plate electric field between the electrostatic of generation it is approximately uniform in
Electric field under parallel-plate electric storage means model.At this point, the adjacent edges in substrate will be such that electric field weakens because of edge effect, and
Locking power also weakens, therefore can two-sided binder by thickness slightly larger than the height of salient point array in order to alleviate this phenomenon
190 are attached at the fringe region of substrate.Two-sided binder 190 uses as follows: in 170 side of salient point type chuck plate using viscous
The extremely strong binder of relay, and the binder slightly weak using bonding force in substrate-side.For example, with 180 degree disbonded test
(peeling test) is standard, and 170 side of chuck plate uses binder intensity for 1000gf/25mm or more person, and 10 side of substrate is adopted
It is 100gf/25mm weak binder below with intensity.Accordingly, two-sided binder 190 will be with 170 strength of salient point type chuck plate
It is bonded and forms permanent adhesive, and show the horizontal weak bonding force of substrate clamping of the auxiliary based on electrostatic force to 10 side of substrate
Characteristic, so as to reuse repeatedly.Also, two-sided binder can also be replaced with the compound adhesive sheet of binder-bonding agent
190 and realize identical function, the compound adhesive sheet has bonding agent in 170 side of salient point type chuck plate, and in substrate 10
Side has reusable weak binder.Two-sided binder 190 can improve substrate edges position as described above, not only such as
This, as long as the region not had an impact to the characteristic of element, so that it may be added at the position of multiplicity and improve locking power.
Unfreezing timing, the phase of opposite real estate with chuck plate are being carried out to the substrate for being attached at salient point type chuck plate 170
When big part will expose, therefore have the advantages that by means of blowing gas or that removes electric lamp goes electric effect available
It improves, and while de-electrifying executes or when electricity being gone increase solution card rationed marketing, by applying lesser power
Substrate can be made to separate from chuck plate easily.When the substrate unfreezing timing for being attached at salient point type chuck plate 170, such as Figure 13
It is shown, electrostatic is weakened and external voltage is applied to chuck plate, and to substrate can solve locking.At this point, external voltage
Polarity DC voltage identical with the electrostatic that substrate carries or alternating voltage can be used.Alternating voltage with the note that blows gas
When entering parallel use, by making the gas that blows realize that help neutralizes electrostatic and ionization.Pottery had both can be used in salient point array
The insulators such as porcelain, polymer and constitute, metal material also can be used and make.The height for constituting the salient point of salient point array is formed
For any side length for being sufficiently smaller than chuck plate, if the height of salient point is excessive, locking power is substantially reduced, therefore preferably using about
For 1~500 μm of height.Constitute salient point array salient point diameter be chosen to be can prevent it is final to being made by depositing operation
The characteristic of product has an impact, and preferably selectes in the range of about 1 μm~10mm.Salient point array is formed as four in the accompanying drawings
Side shape array, however be not limited thereto, also can according to need and deformation implementation be the Polygonal arrays such as hexagonal array or
Circular array, mode of texturing that this is obvious.
Interest field of the invention is not limited to embodiment as described above but by record institute circle of claims
Interest field fixed, that the personnel in the technical field belonging to the present invention with basic knowledge can record in detail in the claims
Within be transformed out multiplicity variation, this is self-evident to those skilled in the art.
Claims (4)
1. a kind of locking method of substrate executes the processing work for substrate while clamping substrate and moving substrate using chuck plate
Sequence, which comprises the steps of:
A surface of the substrate or two surfaces is set to carry electrostatic using ion generator or friction electricity, thus in substrate shape
At electrostatic；
The substrate for carrying electrostatic is placed in chuck plate, the chuck plate is made of conductor or by with insulator coating film
Conductor is constituted,
The polar free charge having with the opposite charge charged in substrate is generated in chuck plate face induction, to utilize
Electrostatic attraction attaches the substrate and the chuck plate.
2. a kind of locking method of substrate executes the processing work for substrate while clamping substrate and moving substrate using chuck plate
Sequence, which comprises the steps of:
A surface of the substrate or two surfaces is set to carry electrostatic using ion generator or friction electricity；
The opposite polarity electrostatic of polarity and substrate is formed in the chuck plate being made of insulator；
The substrate is placed in the chuck plate；
The substrate and the chuck plate are attached by means of electrostatic attraction.
3. a kind of locking method of solution for separating base plate and chuck plate, which is characterized in that substrate and chuck plate are based on such as right
It is required that 1 or method as claimed in claim 2 and after attaching and carrying out process to it, for separating base plate and chuck plate, pass through
Individually implement one of following method method or a variety of methods in the following method of parallel practice and makes substrate and chuck plate
Separation:
Gas utilization method is blowed, so that gas is blown into substrate and chuck plate, chuck plate, which has, can be such that the gas blowed passes through
Gas injection hole or gas inject slot；
Method by driving ion generator to remove electricity；
The method of repulsion is provided to substrate and external voltage is applied to chuck plate；
Machinery solves locking method, and the pin hole that the pin for being used to support substrate can be allowed to pass through is arranged in chuck plate, and makes to solve card rationed marketing
Pass through via pin hole, to mechanically realize that solution is locking.
4. a kind of locking system of substrate, substrate chuck plate is clamped and moving substrate while executes processing work for substrate
Sequence characterized by comprising
Promote charged elements, for forming electrostatic on a surface of the substrate or two surfaces；And
Chuck plate is made of conductor, or is made of the conductor with insulator coating film,
It is described promote with dot element include ion generator or generate friction electricity friction brush,
Wherein, the chuck plate will be placed in due to the substrate of ion generator or friction electricity carrying electrostatic, to utilize the card
The charge of generation is incuded in plate and is attached the substrate and the chuck plate by means of electrostatic attraction.
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2015-0143120 | 2015-10-13 | ||
| KR1020150143120A KR101730864B1 (en) | 2015-10-13 | 2015-10-13 | Chucking method and system for substrte by charging |
| KR10-2015-0180599 | 2015-12-17 | ||
| KR20150180599 | 2015-12-17 | ||
| KR1020160003840A KR101735993B1 (en) | 2016-01-12 | 2016-01-12 | Chucking method and system for substrte by charging |
| KR10-2016-0003840 | 2016-01-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106571328A CN106571328A (en) | 2017-04-19 |
| CN106571328B true CN106571328B (en) | 2019-07-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610515929.7A Active CN106571328B (en) | 2015-10-13 | 2016-07-01 | The locking method of substrate and the locking system of substrate based on on-line treatment |
Country Status (3)
| Country | Link |
|---|---|
| JP (2) | JP6132957B2 (en) |
| CN (1) | CN106571328B (en) |
| TW (1) | TWI600112B (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538776B (en) * | 2018-03-29 | 2021-11-16 | 北京北方华创微电子装备有限公司 | Electrostatic chuck and method of manufacturing the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201714247A (en) | 2017-04-16 |
| TWI600112B (en) | 2017-09-21 |
| JP6412184B2 (en) | 2018-10-24 |
| CN106571328A (en) | 2017-04-19 |
| JP2017126765A (en) | 2017-07-20 |
| JP2017076773A (en) | 2017-04-20 |
| JP6132957B2 (en) | 2017-05-24 |
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