KR101730864B1 - Chucking method and system for substrte by charging - Google Patents
Chucking method and system for substrte by charging Download PDFInfo
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- KR101730864B1 KR101730864B1 KR1020150143120A KR20150143120A KR101730864B1 KR 101730864 B1 KR101730864 B1 KR 101730864B1 KR 1020150143120 A KR1020150143120 A KR 1020150143120A KR 20150143120 A KR20150143120 A KR 20150143120A KR 101730864 B1 KR101730864 B1 KR 101730864B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
It is an object of the present invention to provide a more simplified chucking method and chucking system, and to provide a new chucking method and chucking system which can stably hold a substrate and can be easily shifted. According to the present invention, the substrate and the conductive plate of the chuck plate are charged with opposite electric charges, so that a strong electrostatic attractive force is generated at the interface between them, resulting in strong chucking.
In other words, the present inventors have found that when the substrate and the chuck are brought into close contact with each other and the interface is enlarged, since the interface is not flat but forms an irregular uneven surface, the substrate has portions that are completely engaged with each other, The electrostatic attraction at the surface of the substrate is very strong and strong chucking can be performed. Accordingly, the substrate and the conductive plate are charged and tightly contacted with each other, thereby causing very strong chucking. This is because the distance from the interface between the substrate and the conductive plate is very small and the Coulomb force in inverse proportion to the square of the distance acts.
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chucking method and a chucking system for holding a substrate or a wafer in a manufacturing process for manufacturing various thin film elements such as a semiconductor, an OLED, a display, a solar cell,
In order to fabricate a semiconductor chip or a display panel, a chuck is required to hold the substrate in a process of depositing a thin film on a transparent material substrate such as a silicon wafer or glass. The substrate is held by the chuck to transfer the substrate to the various chambers, and it is pretended to hold the substrate without sagging so as to uniformly form a thin film on the substrate. Such chucks are also applied to semiconductor wafers.
The substrate chuck should be able to grab the substrate stably and be easily dechucked from the finished substrate and not damage the substrate.
As the chucks that have been proposed and used in the past, electrostatic chucks using electric attraction (Korean Patent Laid-open No. 10-2010-0043478), adhesive chucks using adhesive materials, vacuum chucks using vacuum chucking force, electrostatic attraction And a capacitor chuck for chucking a substrate by making a capacitor type. Although many such chucks have been proposed, the lifetime is shortened due to abrasion damage or the like depending on the use environment of the chuck manufactured in a sophisticated structure in the actual process. In particular, the chuck for a large-area substrate has a problem in that the chuck plate is frequently replaced due to the occurrence of warpage or the like in flip operation in which the entire chip is flipped over.
In addition, plasma cleaning is performed before and after the deposition process. At this time, there is inconvenience that the substrate and the surface of the chuck plate are strongly electrified by the plasma to perform the erasing. In the case of no erasure, The substrate and the chuck plate are not strongly adhered to each other, or the contamination in the chamber sticks to the substrate.
Therefore, it is an object of the present invention to provide a more simplified chucking method and a chucking system, and to provide a new chucking method and a chucking system that can stably hold a substrate and can be easily shifted.
In addition, the chucking method and chucking system to be newly proposed by the present invention are advantageous in that they are less in outgassing and can be used even at a high temperature, and are excellent in durability and can reduce maintenance cost and production cost.
According to the above-described object, the present invention provides a method for manufacturing an electrostatic chuck, which uses a conductive plate on which a substrate is charged and a charge of an opposite polarity is induced by a charged substrate as a chuck plate, .
In other words, the present inventors have found that when the substrate and the chuck are brought into close contact with each other and the interface is enlarged, since the interface is not flat but forms an irregular uneven surface, the substrate has portions that are completely engaged with each other, The electrostatic attraction in the electrostatic chuck is very strong and strong chucking can be performed so that the substrate to be chucked is charged in advance and the substrate is brought into close contact with the grounded conductive plate so that a charge of opposite polarity is induced in the chuck, Respectively. This is because the distance from the interface between the substrate and the conductive plate is very small and the Coulomb force in inverse proportion to the square of the distance acts.
The present invention provides a chucking method of charging a front surface or a rear surface of a substrate by electrostatic charging means and attaching a rear surface of the substrate to a chuck plate in the form of a conductive plate.
In the above, the present invention can apply a thin dielectric coating film to the conductor plate.
In the above, the present invention can chuck the substrate and the chuck plate by charging the dielectric chuck plate with the charge of the opposite polarity to the front surface or the rear surface of the substrate.
The present invention can use a method of generating triboelectricity on a substrate, a plasma processing method, or an ion beam processing method for electrostatic charging in the above.
Further, in order to dechuck the charged substrate and the conductive plate, the present invention forms a pinhole for passing a pin through which a substrate is supported on a chuck plate, and dechucking is performed by a method of applying a mechanical force to the pin, It is possible to blow off the gas, to discharge electricity by ionizer, or to apply external voltage to the chuck plate.
In the above, the present invention can form a fine gas injection hole or a gas injection groove in the chuck plate for dechucking of the substrate and the conductive plate.
On the other hand, the present invention also provides a method of electrostatically charging a substrate, attaching a metal foil to a charged substrate, and chucking the substrate with an electrostatic chuck or a capacitor chuck.
It is another object of the present invention to provide an apparatus and a method for preventing a chucking of a part of a substrate and a chuck due to sagging of a substrate or weakening an electrostatic attraction between a substrate and a chuck when mechanical alignment is performed in the process of seating a large- A method for chucking a substrate and a chuck plate by using an electrostatic force of the substrate after being deflected by applying an external voltage to the chuck plate during the substrate seating.
Further, according to the present invention,
In order to dechuck the chucked state of the substrate and the chuck plate in the above manner,
The chuck plate has a pinhole through which the pin supporting the substrate can pass,
The pins can be mounted on the frame and can be raised and lowered, placed under the chuck plate,
A method of dechucking for separating a substrate from a chuck plate, wherein the pin is raised to support and lift the substrate through the pinhole to separate the substrate and the chuck plate.
Further, the present invention is characterized in that, in the above, the chuck plate is provided with a gas injection hole or a gas injection groove through which gases to be blown can be passed, thereby blowing gas to the substrate and the chuck plate. The method comprising the steps of:
Further, the present invention provides a method for manufacturing a semiconductor device, which comprises electrostatically charging one surface or both surfaces of a substrate,
A metal foil is attached to the charged substrate surface,
The metal foil is attracted by the electrostatic attraction by inducing the charge of the opposite polarity to the charge charged on the substrate surface,
A substrate chucking method characterized by chucking a substrate having a metal foil attached thereto by an electrostatic chuck.
Further, according to the present invention,
Electrostatic charge is applied to one surface or both surfaces of the substrate,
A metal foil is attached to the charged substrate surface,
The metal foil is attracted by the electrostatic attraction by inducing the charge of the opposite polarity to the charge charged on the substrate surface,
A metal plate having a metal foil surface as a first electrode plate of the capacitor and a second electrode plate facing the first electrode plate is provided and a dielectric substance is attached to the lower surface of the second electrode plate so that the dielectric is disposed between the first electrode plate and the second electrode plate ,
And a capacitor is formed by applying different voltages to the first electrode plate and the second electrode plate to give a potential difference, thereby chucking the substrate.
According to the present invention, the substrate can be chucked stably, can be easily stuck, and the substrate can be subjected to a plasma cleaning process, so that the charged state of the substrate can be applied to the chucking without depletion, which is very simple and effective.
The chucking method and the chucking system of the present invention chuck the substrate with only a simple metal plate or a metal plate coated with an insulating film, unlike an expensive electrostatic chuck including a conventional electrode forming structure, The substrate can be chucked very cheaply with a low production cost, simple structure can be used in a vacuum chamber with low outgassing and can be used at high temperature, and durability is good, and maintenance of the system using the chuck is simple, And has the advantage of reducing the production cost.
1 and 2 are conceptual sectional views for explaining the chucking principle of the present invention.
3 is a perspective view showing a configuration of a chuck plate for carrying out the present invention and a loading pin for loading a substrate.
4 is a cross-sectional view for explaining charging of a substrate using an ion generator.
5 is a cross-sectional view for explaining charging of a substrate using plasma.
Fig. 6 is a perspective view for explaining charging of a substrate using triboelectricity. Fig.
7 is a perspective view showing a friction brush capable of causing triboelectricity.
Fig. 8 is a perspective view for explaining a method of charging triboelectricity during substrate transfer. Fig.
Fig. 9 is a cross-sectional view for explaining a process of attaching a substrate and a chuck plate.
10 is a cross-sectional view illustrating a process of separating a substrate and a chuck plate.
11 is a cross-sectional view illustrating the use of an ionizer in a process of separating a substrate and a chuck plate.
12 is a cross-sectional view for explaining blowing in the process of separating the substrate and the chuck plate.
13 is a cross-sectional view for explaining a method of externally applying a voltage in a process of separating a substrate and a chuck plate.
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 and 2 are conceptual sectional views for explaining the principle of chucking of the present invention.
Static electricity is charged on the back surface of the
At this time, when the interface between the
The
2, when the rear surface of the
When the
3 shows a configuration of the
The
In Fig. 3, some examples of the configuration of the chuck plate itself are shown. That is, a
Figure 4 shows the use of an ion generator as a means for charging the backside of the
And charges the static electricity in a noncontact manner by the static electricity supplied from the ion generator (40) located below the substrate (10) when the substrate (10) is stopped or transferred. When the substrate is stopped and charged, static electricity is charged while the substrate is supported by the support pins (50). The support pin 50 is made of nonconductive material so that static electricity is not affected during the contact of the
5 shows that the rear surface of the
The
Particularly, the plasma treatment for the
Fig. 6 is a perspective view for explaining charging of a substrate using triboelectricity. Fig.
Triboelectricity is used to electrostatically charge the backside or front of the
That is, during the various processes for the substrate, the substrate transferred from the previous process is prevented from moving by using the substrate fixing part 260 (for example, a stopper or the like), and the friction means Roller) is rotated to generate static electricity due to friction on the back surface of the substrate. As a result, the rear surface of the substrate is charged. The rotational speed of the rubbing means 200 can be adjusted to adjust the rubbing energy supplied to the substrate per hour, and the amount of charged triboelectricity is proportional to the rubbing energy, so that the rotational speed is adjusted according to the process time for chucking the substrate. In order to uniformly frictionally charge the rear surface of the substrate, the rubbing process is performed stepwise (several times) while moving the rubbing means or the substrate horizontally by a certain distance.
The material of the friction means is preferably selected as far as possible on the triboelectric series as compared to the substrate material. For example, if the substrate is made of glass, the friction means may be PET, polyimide, PTFT, or the like. The electrostatic removing
7 is a perspective view showing in detail a friction means capable of causing triboelectricity.
A
Fig. 8 is a perspective view for explaining a method of charging triboelectricity during substrate transfer. Fig. That is, a method of charging the substrate by causing friction during substrate transfer will be described.
The back surface of the
Only a plurality of cylindrical frictional means 200 may be disposed under the
The frictional electrification may be caused merely by stopping the cylindrical frictional means 200 when the transfer roller 270 is operated. However, in order to cause triboelectric charging more quickly, it is possible to maximize the friction effect by rotating the friction means 200 at a constant speed in the direction opposite to the direction of rotation of the transport roller 270. The rear surface of the substrate can be uniformly charged in a limited space by rubbing while changing the substrate transfer direction to the forward and backward directions.
Further, when the cylindrical frictional means is made of a conductor, the voltage is applied thereto, the substrate is brought into contact with the cylindrical frictional means, and the cylindrical frictional means is rotated, the substrate is charged. In this case, the charging efficiency of the substrate is good.
Further, in order to form a static electricity on the substrate, a method may be employed in which a voltage is applied to the conductor plate and the substrate is brought into contact with the conductor plate to which the voltage is applied. When a voltage of 10 V to 1 kV is applied to the conductor plate as a direct current voltage and the substrate is brought into contact with the conductor plate, static electricity can be uniformly formed on the substrate. In the above, the conductor plate may be a conductor plate constituting a chuck plate, but may be a conductor plate provided as a separate charging means.
Fig. 9 shows seating the
A
The
The
The separation by the mechanical force using the dechuck pin 320 is performed by raising the dechuck pin 320 having the same structure as the
Fig. 11 shows the shift by the charge eliminating means.
The static electricity is neutralized by irradiating the
12 is a cross-sectional view for explaining blowing in the process of separating the substrate and the chuck plate.
In the case of applying the
In the case of performing a process in a vacuum, an electrostatic force between the substrate and the chuck is weakened by a vent process in an embodiment of the substrate-chuck separation method, and the dechuck pin is raised to separate the substrate from the chuck. The vent gas contains significant ions, neutralizing the static electricity and weakening the electrostatic force. A large number of fine holes having a diameter of 1 mm or less are drilled in the
13 is a cross-sectional view illustrating a method of externally applying a voltage to a process of separating a substrate and a chuck plate. The static electricity is neutralized and transferred to the
When performing a deposition process using a chucking device, a mechanical alignment is usually made to align the substrate on the chuck surface prior to seating the substrate on the chuck. At this time, alignment is performed by mechanically moving the substrate or the chuck plate with the substrate approaching the surface of the chuck plate for alignment accuracy. In the case of a large-area substrate, the deflection of the substrate is large, so that the stray portion of the substrate comes into contact with or very close to the chuck plate. Thus, using the chucking apparatus of the present invention, alignment accuracy may be degraded due to the electrostatic attraction that is exerted on the chucked portion of the substrate during mechanical alignment. In the present invention, in order to prevent the substrate from sticking to the chuck plate before the completion of the mechanical alignment, or to weaken the attractive force between the substrate and the chuck plate during the seating of the substrate in the case of the large-area substrate, A method for applying a predetermined voltage having the same polarity during a substrate seating process is provided. The external voltage applied to the chuck plate is maintained by applying and holding the substrate from the time when the substrate is supported by the loading pins to start dropping, erasing the voltage after completion of the mechanical alignment and then completely placing the substrate on the chuck plate, .
The overall process of substrate chucking / dechucking according to the present invention will be summarized as follows.
When the substrate transfer robot puts the substrate in the electrostatic charging step, the electrostatic charging device operates to charge the rear surface of the substrate. The charged substrate is again transferred onto the loading pin, which is raised above the chuck plate, by the transfer robot, and the loading pin is lowered to adhere the substrate and the chuck. When the substrate is fixed to the chuck, the deposition process is performed, and the substrate and chuck after the deposition are separated by various substrate-chuck separation methods. The separated substrate is made of display and semiconductor device through various additional processes. The above processes such as the electrostatic charging process, the substrate deposition, the substrate-chucking process, and the substrate-chuck separation can be performed in an atmospheric pressure or a vacuum environment, but it is preferable to perform the process in a vacuum environment in consideration of the stability of the static electricity and the connection with the pre- Do.
In order to reduce scratches or wear on the substrate and chuck plate during substrate chucking and dechucking processes, a non-conductor film may be coated on the metal conductor chuck plate. If the thickness of the non-conductive film is too thick, the chucking force is reduced. Therefore, it is preferable to use a thin film of 100 μm or less. Examples of the non-conductive material applicable to this are ceramics such as alumina, yttria, zirconia, and silicon nitride, which have good abrasion resistance, chemical resistance, and heat resistance.
As a modification of the above embodiment, the chuck plate can be made nonconductive.
The substrate is charged in the same manner as in the previously described embodiments and charged to the backside of the substrate by using the same method as the triboelectricity, ion generator, plasma treatment, etc., A method of placing the substrate on the non-conductor chuck plate after charging it with polarity, and attaching the substrate by the electrostatic attraction between the charged static electricity may be applied.
For example, the back surface of the glass substrate is charged with (+) electric charge, a chuck plate is made of ceramic such as Al 2 O 3, and the chuck plate is charged with (-) charge by using an ion generator to attach the glass substrate to the chuck plate can do. The ceramic material may be made of various metal oxides, and other polymer materials having good heat resistance, Teflon, or the like may be selected as the chuck plate material.
Although the embodiments described above mainly describe charging the back surface of the substrate, it is also possible to apply the same methods to charge the entire surface of the substrate or to charge the entire front and rear surfaces of the substrate to adhere to the chuck plate.
It is also possible to use a combination of two different methods for the electrostatic charging method applied to the front and back sides of the substrate. For example, on the same substrate, the rear surface can be triboelectrified and the front surface can be charged using an ion generator.
On the other hand, in using the mounting concept using the electrostatic charge of the substrate, the following modified embodiments are also possible.
That is, a very thin metal foil can be attached to the substrate by the above-described electrostatic charging, and the substrate to which the metal foil is attached by electrostatic charging can be chucked again with a general electrostatic chuck or a capacitor chuck or the like to hold and transport the substrate. The capacitor chuck is disclosed in Korean Patent No. 10-1222328, and the electrostatic chuck is disclosed in Korean Patent Laid-Open Nos. 10-2015-0005864, Korean Patent No. 10-1467107, Korean Patent No. 10-1319765 Can be used. The content of the patent publication or public study is incorporated herein by reference in its application to the present invention.
The capacitor chuck may be configured such that the metal foil of the substrate to which the metal foil is attached by electrostatic charging is used as the first electrode plate of the capacitor and the second electrode plate which is opposed thereto is provided, To which a dielectric substance is attached. A voltage is applied to the first electrode plate and the second electrode plate to apply a potential difference to form a capacitor to chuck the substrate.
It is to be understood that the invention is not limited to the disclosed embodiment, but is capable of many modifications and variations within the scope of the appended claims. It is self-evident.
10: substrate
60: Process chamber
70: Fixing member
80: Electrode
90: Power supply
100: Chuck plate
110: pinhole
Claims (8)
Forming static electricity on the substrate by charging the static electricity on one side or both sides of the substrate using an ion generator or triboelectricity,
Placing the electrostatically charged substrate on a chuck plate of a conductor with a conductor or non-conductor coating,
Wherein a free charge having a polarity opposite to the charge charged on the substrate is induced on the surface of the chuck plate to attach the substrate and the chuck plate with an electrostatic attraction force.
Charging static electricity by using an ion generator or triboelectricity on one side or both sides of the substrate,
Forming an electrostatic charge of an opposite polarity to the substrate on the non-conductive chuck plate,
Placing the substrate on the chuck plate,
And attaching the substrate and the chuck plate with electrostatic attraction.
The chuck plate is provided with a gas injection hole or a gas injection groove through which gases can be blown, and is used for blowing gas to the substrate and the chuck plate, a method for removing electricity by driving the ion generator, A method of applying a repulsive force to a substrate by applying a repulsive force to a substrate, or a method of providing a pinhole through which a pin for supporting a substrate can be passed on a chuck plate and mechanically dechucking the substrate by passing the substrate through a pinhole And separating the substrate from the chuck plate.
Charging static electricity by using an ion generator or triboelectricity on one side or both sides of the substrate,
Attaching the metal foil to the substrate by electrostatically attracting the metal foil to the substrate by causing a charge of a polarity opposite to the charge charged on the substrate to be guided to the metal foil;
And chucking the substrate to which the metal foil is attached with an electrostatic chuck or a capacitor chuck.
Charging means for forming static electricity on one side or both sides of the substrate; And
And a chuck plate made of a conductor having a conductor or non-conductor coating film,
Wherein the charging means includes an ion generator or a friction brush causing triboelectricity,
Wherein the substrate is electrostatically charged by an ion generator or triboelectric on the chuck plate and the substrate and the chuck plate are attached by electrostatic attraction by the charge induced in the chuck plate.
The step of seating the substrate on a chuck plate,
Wherein the chuck plate is fixed to the chuck plate in a state in which the alignment of the substrate and the chuck plate is started, Applying a voltage to maintain the substrate and the chuck plate in a repulsive force,
Further comprising erasing an external voltage applied to the chuck plate after alignment and attaching the substrate and the chuck plate with an electrostatic attraction force.
The step of seating the substrate on a chuck plate,
A power source is provided to allow alignment between the substrate and the chuck plate without being electrostatically attracted during the alignment process of the substrate charged with static electricity and the chuck plate, And applying a voltage equal to the polarity of the substrate to the chuck plate while aligning the chuck plate and until the alignment is completed, so that the substrate and the chuck plate maintain the repulsive force,
Further comprising erasing the voltage applied to the chuck plate after alignment and attaching the substrate and the chuck plate with an electrostatic attractive force.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150143120A KR101730864B1 (en) | 2015-10-13 | 2015-10-13 | Chucking method and system for substrte by charging |
| JP2016093608A JP6132957B2 (en) | 2015-10-13 | 2016-05-09 | Substrate chucking method and system by charging process |
| TW105120716A TWI600112B (en) | 2015-10-13 | 2016-06-30 | Method of affixing a substrate to a chuck plate, Method of disengaging a substrate and a chuck plate, Method of locking a substrate, and System for locking a substrate and a system for fixing a substrate |
| CN201610515929.7A CN106571328B (en) | 2015-10-13 | 2016-07-01 | The locking method of substrate and the locking system of substrate based on on-line treatment |
| JP2017038898A JP6412184B2 (en) | 2015-10-13 | 2017-03-02 | Substrate chucking method and system by charging process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020150143120A KR101730864B1 (en) | 2015-10-13 | 2015-10-13 | Chucking method and system for substrte by charging |
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| Publication Number | Publication Date |
|---|---|
| KR20170043402A KR20170043402A (en) | 2017-04-21 |
| KR101730864B1 true KR101730864B1 (en) | 2017-05-02 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1020150143120A KR101730864B1 (en) | 2015-10-13 | 2015-10-13 | Chucking method and system for substrte by charging |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142410A (en) * | 2001-10-31 | 2003-05-16 | Applied Materials Inc | Film formation method and film formation device |
| JP2006216583A (en) * | 2005-02-01 | 2006-08-17 | Olympus Corp | Static electricity eliminating method and substrate processing apparatus |
| JP2013098436A (en) * | 2011-11-02 | 2013-05-20 | Toyota Motor Corp | Soi wafer |
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2015
- 2015-10-13 KR KR1020150143120A patent/KR101730864B1/en active IP Right Grant
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003142410A (en) * | 2001-10-31 | 2003-05-16 | Applied Materials Inc | Film formation method and film formation device |
| JP2006216583A (en) * | 2005-02-01 | 2006-08-17 | Olympus Corp | Static electricity eliminating method and substrate processing apparatus |
| JP2013098436A (en) * | 2011-11-02 | 2013-05-20 | Toyota Motor Corp | Soi wafer |
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| KR20170043402A (en) | 2017-04-21 |
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