CN106558558A - 用于制造功率电子开关装置的方法以及功率电子开关装置 - Google Patents

用于制造功率电子开关装置的方法以及功率电子开关装置 Download PDF

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Publication number
CN106558558A
CN106558558A CN201610847618.0A CN201610847618A CN106558558A CN 106558558 A CN106558558 A CN 106558558A CN 201610847618 A CN201610847618 A CN 201610847618A CN 106558558 A CN106558558 A CN 106558558A
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China
Prior art keywords
dielectric film
power semiconductor
base material
semiconductor assembly
electronic switching
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CN201610847618.0A
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English (en)
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F·瓦格纳
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Semikron GmbH and Co KG
Semikron Elektronik GmbH and Co KG
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Semikron GmbH and Co KG
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Publication of CN106558558A publication Critical patent/CN106558558A/zh
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Abstract

本发明提出用于制造功率电子开关装置的方法。在所述功率电子开关装置中，功率半导体组件布置在基材的导体轨道的第一区域上。然后提供包括切除部的绝缘膜，其中所述绝缘膜的重叠区域设计成覆盖功率半导体组件的边缘区域，所述重叠区域邻近于所述切除部。这之后将绝缘膜布置在基材上，其中功率半导体组件布置于基材上，以使得功率半导体组件在其边缘区域的所有侧边上由绝缘膜的覆盖区域所覆盖，其中绝缘膜的另一部段覆盖所述导体轨道之一的部分。最后，布置连接装置。

Description

用于制造功率电子开关装置的方法以及功率电子开关装置
技术领域
本发明描述了用于制造功率电子开关装置的方法以及根据该方法制造的功率电子开关装置。这种功率电子开关装置可通过其本身或与另外优选的相同基本单元组合形成功率半导体模块或功率电子系统的功率电子基本元件而形成功率半导体模块或功率电子系统的基本单元。
背景技术
现有技术例如由DE 10 2007 006 706 A1形成。该文献公开了一种用于制造功率电子开关装置的方法，所述方法包括以下方法步骤：
·在基材的导体轨道上形成多个烧结金属区域。
·将至少一个半导体组件布置于相关联的烧结金属区域上。
·将绝缘材料布置于半导体组件的侧表面上。具体地，注射成型或铸造工艺在此是有利的，在所述工艺之后进行交联，例如在所述工艺之后进行UV照射。
·布置连接装置(connection device)。
·进行连接装置的以及半导体组件的压力烧结连接。
如本领域中常规的那样，以这种方式制造的用于内绝缘、尤其用于与相关标准诸如EN 60664或IEC 60664相符的功率电子开关装置还必须用封装材料封装，例如从DE 102007 044 620 A1或DE 10 2009 000 888 A1已知的那样。
发明内容
依据所述情况，本发明的目的是在此提出一种用于制造功率电子开关装置和布置的方法，其中可更容易地制造所述开关装置的内绝缘。
根据本发明的用于制造功率电子开关装置的方法包括以下方法步骤、尤其按所述顺序的以下方法步骤，其中所述功率电子开关装置包括基材、布置于所述基材上的功率半导体组件，以及形成功率电子开关装置的连接配对部的平面连接装置，所述方法步骤为：
a)提供基材、功率半导体组件和连接装置，所述基材包括彼此电绝缘的第一导体轨道；
b)将功率半导体组件布置在基材的相关联的导体轨道上；
c)提供包括切除部的绝缘膜，其中所述绝缘膜的重叠区域设计成覆盖功率半导体组件的边缘区域，该重叠区域邻近于所述切除部；
d)将绝缘膜以平面方式布置于基材上，其中功率半导体组件布置于基材上，以这样的方式，功率半导体组件在其边缘区域的所有侧边上由绝缘膜的覆盖区域覆盖，其中所述功率半导体组件的中央区域由于切除部而保持未被覆盖，并且其中所述绝缘膜的另一部段覆盖所述导体轨道之一的部分；此外，未由导体轨道覆盖的基材部分，特别是绝缘主体，可由绝缘膜覆盖；在此，可能是有利的是，功率半导体组件的中央区域由于切除部而完全不被覆盖(cleared)，其中功率半导体组件的边缘区域由覆盖区域覆盖；类似地，也可能有利的是，绝缘膜在导体轨道之一的区域中具有另一切除部；以及
e)布置连接装置。
不言而喻的是，如果其本身不被排除，则以单数提及的特征可在根据本发明的开关装置中以两个或更多个出现。通过示例的方式，所述功率半导体组件是至少一个功率半导体组件，其中这可同样理解为意味着多个功率半导体组件布置在基材的一个或多个导体轨道上。
相应地有利的是，绝缘膜具有在50微米至800微米之间、特别是在150微米至400微米之间的厚度，以及具有大于500千伏/米、特别是大于2000千伏/米的介电强度，和大于109欧姆/米、特别是大于1010欧姆/米的比电阻。
为此目的，有利的是绝缘膜由聚酰亚胺-PI或聚醚醚酮-PEEK或液晶聚合物-LCP构成。
在绝缘膜中的切除部优选通过切绘机或通过激光切割装置来产生。
特别优选的是，绝缘膜在其面对基材的表面上、特别是在整个表面区域上具有粘合剂层，并且绝缘膜通过所述粘合剂层粘接固定到功率半导体组件的边缘区域和导体轨道的部段。
进一步有利的是，连接手段(connecting means)在每种情况下布置在两个连接配对部之间，所述连接手段适于在连接配对部的相关联的接触区域之间形成粘结连接，优选压力烧结连接。为此目的，连接手段可以小板(platelet)形式布置或作为悬浮体(suspension)布置。
在方法步骤e)之后有利地执行以下方法步骤：
f)使得所述功率电子开关装置经受110℃到400℃的温度以及5MPa到50MPa的压力，其中至少两个连接配对部同时以粘结方式连接到彼此。
具体地，连接装置可设计成膜/箔片层叠体，其由至少一个导电箔片和至少一个电绝缘膜的交替布置形成。通过示例的方式，包括第一导电箔片、绝缘膜和第二导电箔片的膜/箔片层叠体是优选的。导电箔片优选固有地构建以形成另外的导体轨道。膜/箔片层叠体优选具有在必要的点处从第一导电箔片通过绝缘膜到达第二导电箔片的镀通孔。因此，能够制造复杂的电连接拓扑结构。
根据本发明的功率电子开关装置、特别是根据上述方法制造的功率电子开关装置设计有基材、布置于所述基材上的功率半导体组件，和平面连接装置，其中这些连接配对部以适于电路的粘结方式导电地连接到彼此，并且其中所述功率半导体组件在其边缘区域的所有侧边上由绝缘膜的覆盖区域覆盖。
功率电子开关装置优选具有负载连接装置以及可选地还具有辅助连接装置，在每种情况下其以力配合或粘结的方式连接到导体轨道或连接到连接装置的导电箔片。
不言而喻的是，本发明的不同细化方案可以单独实现或以本身不相互排斥的任何期望的组合来实现，以便实现改进。具体地，在不背离本发明范围的情况下，上文和下文提及和解释的特征，不论它们是否在方法或目的的上下文中提及，可以不仅以所指出的组合使用，而且可以其它组合或它们本身使用。
附图说明
本发明的进一步的解释、有利细节和特征从根据本发明制造的开关装置的在图1至图6中示出的示例性实施例或其部分的以下描述得以明确。
图1和图2分别示出根据本发明制造的处于不同平面内的第一功率电子开关装置的侧剖视图。
图3示出第一开关装置的细节。
图4示出根据本发明制造的第二开关装置的细节。
图5示出第一开关装置的进一步的细节。
图6示出根据本发明制造的第一开关装置的俯视图。
具体实施方式
图1示出根据本发明的第一功率电子开关装置1和冷却装置4参照图6中的剖切线A-A所得侧剖视图的分解视图，该开关装置可以本领域常规的方式布置于冷却装置4上。所述附图示出基材2，其以本领域内基本常规的方式形成，其包括绝缘主体20和导体轨道22，所述导体轨道22布置在所述绝缘主体上且分别彼此电绝缘并具有不同的电势，特别是负载电势，但也具有开关装置的辅助电势，特别是切换电势和测量电势。所述附图具体示出具有负载电势的三个导体轨道22，如典型的半桥拓扑结构那样。
功率开关24在每种情况下布置于两个导体轨道22上，所述功率开关以本领域内常规的方式设计成单个开关，例如设计成MOS-FET或设计成具有背对背并联连接的功率二极管的IGBT。功率开关24以本领域内常规的方式导电地连接到导体轨道22，优选通过压力烧结连接导电地连接到导体轨道22。
开关装置1的内部连接通过连接装置3形成，其包括具有交替的导电箔片30、34和电绝缘膜32的膜/箔片层叠体。在这种情况下，膜/箔片层叠体精确地具有两个导电箔片和布置在所述导电箔片之间的绝缘膜。具体地，连接装置3的导电箔片30、34固有地构建，并因此形成彼此电绝缘的另外的导体轨道。这些另外的导体轨道具体地将相应的功率半导体组件24连接到基材2的导体轨道22，更精确地是将所述功率半导体组件在背离基材2的一侧上的接触区域连接到基材2的导体轨道22。在一个优选的细化方案中，相应的另外的导体轨道通过烧结连接而以粘结的方式连接到相关联的接触区域。不言而喻的是，在不同的功率半导体组件24之间以及还在基材2的不同导体轨道22之间的连接也可以相同的方式形成。
根据本发明，绝缘膜5粘接连接到基材2，并因此也粘接连接到所述基材的导体轨道22，同样地粘接连接到功率半导体组件24的相应边缘区域242。在此，绝缘膜5具有通过激光切割方法所产生的切除部540。因此，在已布置状态下，绝缘膜5的覆盖区域54在相应功率半导体组件24的边缘区域242上环绕延伸。在这种情况下，“环绕延伸”意旨被理解为意味着功率半导体组件24的整个边缘区域242在所有侧边上由绝缘膜5的重叠区域54所覆盖，也就是说没有中断，也参照附图6。
为了电连接的目的，功率电子开关装置1具有负载连接元件26和辅助连接元件28。纯粹通过示例的方式，负载连接元件26设计成为成形的金属主体，其通过接触脚以粘结的方式连接到基材2的导体轨道22，有利地同样通过烧结连接或者通过焊接连接进行连接。从原则上而言，连接装置3的部分本身也可设计成负载连接元件或辅助连接元件。诸如栅极连接或传感器连接的辅助连接元件28可另外以本领域内的常规方式设计，如以弹簧接触的形式示出的那样。
功率电子开关装置1以本领域内常规的方式布置于冷却装置4上，并且可热传导地连接到所述冷却装置，通过示例的方式，通过粘合剂、焊接或烧结连接进行连接。作为替代方案，功率电子开关装置1可布置于冷却装置4上并通过压力接触装置和导热中间层40热传导地连接到所述冷却装置。以这种方式，从功率半导体组件24的功率损耗可被有效地耗散。
图2示出根据本发明的第一功率电子开关装置1参照附图6的剖切线B-B所得的侧剖视图。所述附图再次示出基材2包括绝缘主体20和布置于所述绝缘主体上的导体轨道22。功率半导体组件24布置于所述导体轨道上。所述附图同样示出绝缘膜5。该剖视图示出功率半导体组件24的边缘区域242，其结果是示出为连续形式的绝缘膜5，换言之其重叠区域54以完整的形式沿着功率半导体组件延伸。
图3示出第一开关装置的细节。所述附图以相比于附图1的放大比例示出导体轨道22和功率半导体组件24，在这种情况下，其是电压等级为1200伏的IGBT，其仅部分地示出。功率半导体组件24，更精确地是所述功率半导体组件的第一接触区域246，相应地参照附图5通过第一连接手段247通过压力烧结连接以导电和粘结的方式布置于导体轨道22上并连接到导体轨道22，该第一接触区域面对基材。
图3还示出同样地参照附图5的功率半导体组件24的第二接触区域244，该第二接触区域背离基材2，并且不延伸远至功率半导体组件24的边缘。如本领域内常规的那样，边缘结构，特别是场环结构(field ring structure)在接触区域244和功率半导体部件24的边缘之间形成；然而，所述边缘结构未示出。
图3还示出绝缘膜5，该绝缘膜通过其覆盖区域54覆盖功率半导体组件24的边缘区域242并在该处粘接连接到功率半导体组件24。在这种情况下，该覆盖区域54在功率半导体组件24的第二接触区域244的边缘上延伸。通过该细化方案确保根据标准所要求的与导体轨道22的绝缘。
在一些情况下，功率半导体组件24的该边缘区域242在开关装置的操作期间对环境湿度是敏感的。进一步的优势根据该细化方案借助于绝缘膜5的布置来实现，具体地，以不透水的方式覆盖功率半导体组件24的边缘区域242，因此甚至在涉及高水平大气湿度的环境条件下开关装置也能够可靠操作。
从原则上而言，优选的是，绝缘膜面对基材5的整个表面是粘性的，其结果是绝缘膜粘合到导体轨道22并且也粘合到导体轨道22之间的绝缘主体20。
在这种情况下，绝缘膜5本身由聚酰亚胺构成，其具有约为500微米的厚度。这将产生大于800千伏/米的介电强度。
图3同样相应地参照附图5示出连接装置3，所述连接装置的第一导电箔片30，更精确地是所述导电箔片的接触部段320，通过连接手段245通过压力烧结连接而连接到功率半导体组件24的第二接触区域244。参照附图1，该导电的第一箔片30或从其形成的另外的导体轨道用于将功率半导体组件24的第二接触区域244电连接到基材2的导体轨道22，该导体轨道相邻于所述第二接触区域布置。
绝缘膜32布置于第一导电箔片30背离基材2的那一侧上，并且第二导电箔片34依次布置在所述绝缘膜上。由于其结构，该第二导电箔片34只延伸远至功率半导体组件24的第二接触区域244上方。
图4示出根据本发明制造的第一开关装置的细节。相比于根据图3的细化方案，绝缘膜5的重叠区域54并不重叠功率半导体组件24的边缘区域242远至所述功率半导体组件的第二接触区域244。
图5示出第一开关装置的进一步的细节。所述附图示出功率半导体组件24包括具有第一接触区域244和第二接触区域246的硅体。压力烧结连接的连接手段245、247示出位于这些接触区域244、246上，所述连接手段、特别是在第二接触区域244的情况下，不延伸远至所述第二接触区域的边缘。
图6示出根据本发明制造的第一开关装置的俯视图。所述附图示出基材2包括绝缘主体20，在此不限制一般性，其为工业用陶瓷诸，如氧化铝陶瓷或氮化铝陶瓷。用于负载电势的三个导体轨道22示出位于绝缘主体20上。未示出用于辅助电势的导体轨道，该导体轨道在本领域内是常规的。
在每种情况下，两个功率晶体管24(在该情况下为IGBT)和布置在两个IGBT之间的一个功率二极管示出位于三个导体轨道22中的两个上。功率半导体组件24通常具有在0.5厘米至1.5厘米的边缘长度。
图6还示出绝缘膜5，在每种情况下其具有针对每个功率半导体组件24的一个切除部540。该切除部540以上述方式设计，并具有相对于功率半导体组件24在所有侧边上的重叠区域54，其中该覆盖区域54(也参照图3和图4)具有0.25毫米至2毫米、特别是0.8毫米至1.5毫米的宽度。由于功率半导体组件24的边缘区域242由覆盖区域54覆盖，功率半导体组件24的中央区域仍保持完全未被覆盖。在绝缘膜5中的这些切除部540在此通过激光切割装置产生。
也参照图1和图2，绝缘膜5还覆盖相应功率半导体组件24周围的导体轨道22的区域以及还部分地覆盖在相邻导体轨道22之间的中间区域。
此外，绝缘膜5具有在三个导体轨道22中的两个导体轨道内的另外的切除部520，所述另外的切除部用于通过连接装置3的导电箔片30的另一导体轨道将功率半导体组件24的第二接触区域244连接到这些导体轨道22。

Claims (14)

1.用于制造功率电子开关装置(1)的方法，所述功率电子开关装置(1)包括基材(2)、布置于所述基材上的功率半导体组件(24)，以及形成功率电子开关装置的连接配对部的平面连接装置(3)，所述方法包括以下方法步骤：
a)提供基材(2)、功率半导体组件(24)和连接装置(3)，所述基材(2)包括彼此电绝缘的第一导体轨道(22)；
b)将功率半导体组件(24)布置在基材(2)的相关联的导体轨道(22)上；
c)提供包括切除部(520，540)的绝缘膜(5)；
d)将绝缘膜(5)以平面方式布置于基材(2)上，其中功率半导体组件(24)布置于基材上，以使得功率半导体组件(24)在其边缘区域(242)的所有侧边上由绝缘膜(5)的覆盖区域(54)覆盖，其中所述功率半导体组件(24)的中央区域由于切除部(540)而保持未被覆盖，并且其中所述绝缘膜(5)的另一部段(52)覆盖所述导体轨道(22)的部分；以及
e)布置连接装置(3)。
2.根据权利要求1所述的方法，其特征在于：
功率半导体组件(24)的中央区域完全不被覆盖，其中功率半导体组件(24)的边缘区域(242)由覆盖区域(54)覆盖。
3.根据权利要求1或2所述的方法，其特征在于：
绝缘膜(5)具有在50微米至800微米之间、特别是在150微米至400微米之间的厚度，以及具有大于500千伏/米、特别是大于2000千伏/米的介电强度，和大于109欧姆/米、特别是大于1010欧姆/米的比电阻。
4.根据权利要求1所述的方法，其特征在于：
绝缘膜(5)由聚酰亚胺-PI或聚醚醚酮-PEEK或液晶聚合物-LCP构成。
5.根据权利要求1所述的方法，其特征在于：
绝缘膜(5)具有在导体轨道(22)区域中的另一切除部(520)。
6.根据权利要求1所述的方法，其特征在于：
连接手段(245，247)在每种情况下布置在两个连接配对部之间，所述连接手段适于在连接配对部的相关联的接触区域之间形成粘结连接。
7.根据权利要求6所述的方法，其特征在于：
连接手段(245，247)以小板形式布置或作为悬浮体布置。
8.根据权利要求6所述的方法，其特征在于：
在方法步骤e之后执行以下方法步骤：
f)使得所述功率电子开关装置(1)经受110℃到400℃的温度以及5MPa到50MPa的压力，其中至少两个连接配对部同时以粘结方式连接到彼此。
9.根据权利要求1所述的方法，其特征在于：
连接装置(3)设计成膜/箔片层叠体，其由形成第二导体轨道的至少一个导电箔片(30，34)和至少一个电绝缘膜(32)的交替布置形成。
10.根据权利要求1所述的方法，其特征在于：
在绝缘膜(5)中的切除部(520，540)通过切绘机或通过激光切割装置来产生。
11.根据权利要求1所述的方法，其特征在于：
绝缘膜(5)在其面对基材(2)的表面上具有粘合剂层，并且通过所述粘合剂层粘接固定到功率半导体组件(24)的边缘区域(242)和导体轨道(22)的部段。
12.功率电子开关装置(1)，特别是根据前述权利要求所述方法制造的功率电子开关装置(1)，其包括基材(2)、布置于所述基材上的功率半导体组件(24)，和平面连接装置(3)，其中这些连接配对部以适于电路的粘结方式导电地连接到彼此，并且其中绝缘膜(5)的覆盖区域(54)覆盖功率半导体组件(24)的边缘区域(242)的所有侧边。
13.根据权利要求12所述的功率电子开关装置(1)，其特征在于，负载连接装置以力配合或粘结的方式连接到导体轨道(22)或连接到连接装置(3)的导电箔片。
14.根据权利要求12或13所述的功率电子开关装置(1)，其特征在于：
辅助连接装置(28)以力配合或粘结的方式连接到导体轨道(22)或连接到连接装置(3)的导电箔片。
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