CN101807565A - 半导体系统 - Google Patents

半导体系统 Download PDF

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CN101807565A
CN101807565A CN201010119271A CN201010119271A CN101807565A CN 101807565 A CN101807565 A CN 101807565A CN 201010119271 A CN201010119271 A CN 201010119271A CN 201010119271 A CN201010119271 A CN 201010119271A CN 101807565 A CN101807565 A CN 101807565A
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克里斯蒂安·约布尔
海科·布拉姆尔
乌尔里希·赫尔曼
托比亚斯·非
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Semikron GmbH and Co KG
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Abstract

本发明涉及一种半导体系统，尤其是功率半导体系统，其中具备设有触点(10)的上侧的半导体(2、4、11、12)与由箔片复合体(7、8、9)形成的电连接装置(6)相连接，其中，在电连接装置(6)与半导体(2、4、11、12)上侧之间设置有底填充物(14)。为了改善底填充物的耐久性而根据本发明提出：所述底填充物(14)具有由陶瓷前驱体聚合物形成的基质。

Description

半导体系统
技术领域
本发明涉及一种根据权利要求1前序部分的半导体系统，特别是功率半导体系统。
背景技术
从US 6,624,216公知如下的半导体系统。在该公知的半导体系统中，在半导体的设有触点的上侧与由箔片复合体形成的电连接装置之间的底填充物(Unterfüllung)由环氧树脂组成。尤其是在功率半导体系统中，在运行中出现相对高的温度。
已知的用来进行底填充的环氧树脂必须大多在-40℃的温度下保存在冷冻状态下。在实践中，可以将材料最多解冻三次。否则环氧树脂的性质改变，特别是其本就很低的适用期(Topfzeit)。对于加工而言，不利的是首先需要将环氧树脂解冻。这是耗费时间的。迄今为止用作填充材料的环氧树脂的另一个缺点在于：该环氧树脂在持续运行中的温度耐受能力仅最大为170℃。此外，已知材料具有低于200℃的玻璃化转变温度TG。在所述玻璃化转变温度TG之上，所述材料的线性膨胀系数(CTE)发生跃变。这可能在生产底填充物之后的方法步骤中，例如回流焊接中，导致不希望的损害或缺陷。最后，已知材料的热导率不是特别高，该热导率一般为0.25至0.5W/mK。鉴于此，不适于或仅在一定条件下适于制造在运行中散发相对大的热量的功率半导体系统。
发明内容
本发明的任务在于，消除依照现有技术的缺点。尤其应当给出一种半导体系统，所述半导体系统与电连接装置的复合体具有改进的耐久性。
该任务通过权利要求1的特征得以解决。本发明适当的构造方案从权利要求2至8的特征得出。
根据本发明的措施而设置为，底填充物具有由陶瓷前驱体聚合物形成的基质(Matrix)。所提出的底填充物是电绝缘的，该底填充物具有出色的温度耐受能力。该底填充物可以在线性膨胀系数(CTE)方面以如下方式进行调整，即，实现了半导体与电连接装置之间连接的出色耐久性。此外，所提出的陶瓷前驱体聚合物可以在室温下保存。在此，该陶瓷前驱体聚合物在室温下的适用期(Tropfzeit)为数个月。
在本发明的范围中，“触点”这一概念尤其被理解为设置在上侧的接触面，所述接触面通过绝缘机构彼此分隔。这样的接触面可以构造为平的、凸的或凹的。“箔片复合体”这一概念被理解为由至少一个金属箔片层和至少一个电绝缘箔片层组成的柔性的层压体。所述至少一个电绝缘箔片层可以具有穿孔，从而所述金属箔片层能穿过穿孔进行触点接通。就此而言，例如对DE 103 55 925 A1进行参考，DE 10355 925 A1示例性地介绍了箔片复合体。关于对箔片复合体的方面，将该文献的公开内容纳入本发明。
“陶瓷前驱体聚合物”这一概念被理解为如下聚合物，该聚合物随着温度增加而首先过渡为凝胶状，并随后过渡为热固性形式。在热固性形式下，陶瓷前驱体聚合物在持续运行中一般具有高达300℃的温度耐受能力。在继续升温的情况下，可以由陶瓷前驱体聚合物生成陶瓷材料。属于陶瓷前驱体聚合物的例如有聚硅烷、聚碳硅烷和聚有机硅氮烷。
根据有利的构造方案，利用填料以高达80体积％、优选为以高达50体积％的填充度来填充陶瓷前驱体聚合物。从而尤其可以对陶瓷前驱体聚合物的流动特性进行调整。
填料适当地是由陶瓷材料构成的、具有处于0.5至500μm范围内平均颗粒尺寸的粉末。提出的所述陶瓷材料很大程度上是惰性的。所述陶瓷材料的添加不导致不希望的化学副反应。所提出的平均颗粒尺寸实现了使用传统应用件来应用陶瓷前驱体聚合物，传统应用件例如是针式分配器、喷射器等。
在室温下，陶瓷材料的热导率λ适当地大于10W/mK，优选大于20W/mK。由此，根据填充度实现的是：被以陶瓷材料填充的陶瓷前驱体聚合物的热导率值提高到2W/mK以上的数值。因此，所述材料特别适用于制造在运行中散发相对大的热量的功率半导体系统。
陶瓷材料适当地选自如下的组：BN、SiC、Si3N4、AlN、滑石、堇青石。所提出的陶瓷材料以高热导率见长。
陶瓷前驱体聚合物适当地以凝胶的形式或热固性的形式存在。各所希望的形式通过陶瓷前驱体聚合物的交联度来确定。交联度例如又可以通过输送热能来调整。由此，陶瓷前驱体聚合物的硬度和刚度可以适配于相应的需要。陶瓷前驱体聚合物以所述两种形式具有在金属上的高粘附力，金属特别是指铝或铜，这使得电连接装置与半导体之间牢固结合。
已被证实适当的是，所述陶瓷前驱体聚合物选自如下的组：聚硅氧烷、聚硅氮烷、聚碳硅烷。利用所述材料尤其可以使适用期增长以及使可保存性变得容易。在室温下保存的话，可以实现6至9个月的适用期。粘度可以通过填料的类型、填料的平均颗粒尺寸以及填充度来适配相应的需要。
根据另一构造方案设置为，半导体的背离上侧的底侧与衬底相连接。半导体，特别是功率半导体可以粘合在该衬底上或也可以利用装配机构来固定，例如利用螺钉来固定。
附图说明
下面，结合附图详细地解释本发明的实施例。其中，
图1示出半导体系统的示意剖面图；以及
图2示出图1中以“A”标示的截段(Ausschnitt)的细节视图。
具体实施方式
在附图中所示的半导体系统中，在衬底1上固定有处于第一散热板3中间连接下的第一功率半导体2以及处于第二散热板5中间连接下的第二功率半导体4。第一功率半导体2例如可以是功率二极管，第二功率半导体4可以是功率晶体管。
利用参考标号6普适性地标示电连接装置，所述电连接装置由箔片复合体形成。所述箔片复合体包括第一金属箔片7，第一金属箔片7在电绝缘箔片8的介入下与第二金属箔片9层压起来。第一金属箔片7与在第一半导体元件2的上侧以及在第二半导体元件4的上侧标示的触点10导电地连接。所述触点10可以是接触面。
标号11标示了第三半导体，在这里是驱动部件(Treiberbaustein)，该第三半导体在这里借助呈细线材形式构成的触点10与第二金属箔片9导电地连接。
第四功率半导体12具有触点10，触点10由第二金属箔片9与接触区(Kontaktfeld)13之间的键合连接部组成，所述接触区设置在第四功率半导体12的另一上侧上。
当然，其它带有或不带散热板的半导体或者其它结构元件也可以取代功率半导体。
尤其如由图2所示，用底填充物14来填充功率半导体2、4、11、12的朝向连接装置6的上侧之间的体积V1、V2、V3、V4、V5和V6。在这里，底填充物14由陶瓷前驱体聚合物形成，优选地由聚硅氧烷形成，利用平均颗粒尺寸处于1至5μm范围内的SiC粉末，以20至35％的填充度对所述陶瓷前驱体聚合物进行填充。在这里，底填充物14以热固性状态存在。这样的优点在于，纵然在高达300℃的运行温度下，所提出的底填充物自身的性质几乎无变化。反过来，所述底填充物14有利于将由功率半导体2、4、11和12产生的热量有效地特别是引导到箔片复合体6的金属箔片7、9上并且散发出去。
参考标记列表
1    衬底
2    第一功率半导体
3    第一散热板
4    第二功率半导体
5    第二散热板
6    连接装置
7    第一金属箔片
8    绝缘箔片
9    第二金属箔片
10   触点
11   第三功率半导体
12   第四功率半导体
13   接触面
14   底填充物
V1-V6    体积

Claims (8)

1.半导体系统，尤其是功率半导体系统，其中具备上侧的半导体(2、4、11、12)与由箔片复合体(7、8、9)形成的电连接装置(6)相连接，所述上侧设有触点(10)，其中，在所述连接装置(6)与所述半导体(2、4、11、12)的所述上侧之间设置有底填充物(14)，
其特征在于，
所述底填充物(14)具有由陶瓷前驱体聚合物形成的基质。
2.根据权利要求1所述的半导体系统，其中，利用填料以高达80体积％、优选高达50体积％的填充度来填充所述陶瓷前驱体聚合物。
3.根据权利要求1或2所述的半导体系统，其中，所述填料是由陶瓷材料构成的、具有处于0.5μm至500μm范围内的平均颗粒尺寸的粉末。
4.根据前述权利要求之一所述的半导体系统，其中，在室温下，所述陶瓷材料的热导率λ大于10W/mK，优选大于20W/mK。
5.根据前述权利要求之一所述的半导体系统，其中，所述陶瓷材料选自如下的组：BN、SiC、Si3N4、AlN、滑石、堇青石。
6.根据前述权利要求之一所述的半导体系统，其中，所述陶瓷前驱体聚合物以凝胶状或热固性的形式存在。
7.根据前述权利要求之一所述的半导体系统，其中，所述陶瓷前驱体聚合物选自如下的组：聚硅氧烷、聚硅氮烷、聚碳硅烷。
8.根据前述权利要求之一所述的半导体系统，其中，所述半导体(2、4、11、12)的背离所述上侧的底侧与衬底(1)连接。
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