CN106531810B - 一种分立的功率mos场效应管及其制造方法 - Google Patents
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Abstract
本发明公开了一种分立的功率mos场效应管及其制造方法,在功率mos场效应管成型过程中,首先在外延层中形成源区,对成型的源区进行接触孔腐蚀,接触孔区域进行P+注入与原有P+区衔接形成P+区,然后进行金属淀积形成金属层,最终得到金属层与源区的N+和P+接触,工艺过程中减少了原有工艺过程中两次光刻腐蚀分别形成N+和P+的光刻过程,从而将功率MOS制造流程减少一次光刻,从而简化制造流程,降低生产成本,采用刻硅技术缩短了P+到金属层接触的路径,从而减小了寄生P+电阻,进而可抑制寄生NPN管的开启,有利于提高雪崩击穿耐量,采用先形成源区,再对成型的源区进行接触孔腐蚀,避免了由于N+浓度远高于P+浓度导致在接触孔光刻后的P+注入无法形成的麻烦。
Description
技术领域
本发明涉及半导体功率器件,特别是涉及一种分立的功率mos场效应管及其制造方法。
背景技术
传统的分立的功率mos场效应管制造方法通常包含7层光刻终端环光刻、有源区光刻、多晶硅光刻、N+光刻、接触孔光刻、金属光刻和钝化层光刻共7层光刻,而在N+注入时需要使用N+光刻来确定N+注入区域,否则,不该被注入的P+区域会被注入N+,由于通常N+浓度远高于P+浓度,这就会导致在接触孔光刻后的P+注入无法形成,则无法形成P+接触区域,工艺繁琐且不易形成,如图1所示。功率MOS的制造技术复杂度以及成本高低主要取决于光刻层次的多少,光刻层次多,则制造流程复杂,成本较高,反之,则制造流程简化,成本较低。
发明内容
本发明的目的在于提供一种分立的功率mos场效应管及其制造方法,以克服现有技术的不足。
为达到上述目的,本发明采用如下技术方案:
一种分立的功率mos场效应管的制造方法,具体包括以下步骤:
步骤1),首先对衬底外延层外侧进行氧化,再进行终端工艺形成终端;
步骤2),然后在外延层中形成源区;
步骤3),通过接触孔光刻选择要形成接触孔的区域,并进行接触孔腐蚀;
步骤4),接触孔区域进行P+注入与原有P+区衔接形成P+区,然后进行金属淀积形成金属层,最终得到金属层与源区的N+和P+接触。
进一步的,具体的,步骤1)中,对衬底外延层外侧进行氧化后依次进行终端环光刻、终端环注入、终端环推进、场氧化后形成终端。
进一步的,步骤2)中,在需要形成源区的外延层中进行有源区光刻,然后进行有源区腐蚀,然后在待形成源区两侧进行JFET注入和栅氧生长,然后进行多晶硅淀积和多晶硅掺杂,然后对多晶硅淀积后区域进行多晶硅光刻和多晶硅刻蚀,然后依次进行Pbody注入、Pbody推进、N+注入、P+注入、BPSG淀积、BPSG回流最终形成源区。
进一步的,步骤3)中,进行接触孔腐蚀时对其他区域使用光刻胶进行保护,不被腐蚀,在接触孔腐蚀时,先将表面的介质层腐蚀掉,然后通过对硅的腐蚀,将N+区硅腐蚀掉至P+区。
进一步的,步骤4)后将器件的源极引出,金属层在接触孔底部与P+接触,将器件的衬底引出,并且与源极短接在一起。
进一步的,衬底为N型衬底。
一种功率mos场效应管,包括衬底以及衬底上的外延层,外延层上的沟道区内设有源区,外延层上依次设有栅极、层间介质和金属层,源区中的N+和P+均与金属层接触。
进一步的,所述衬底为N型衬底。
进一步的,具体的金属层底部与P+接触,金属层两侧与N+侧壁接触,其中N+底线与P+上线平齐。
进一步的,源区两侧设有JFET注入层。
与现有技术相比,本发明具有以下有益的技术效果:
本发明一种分立的功率mos场效应管及其制造方法,在功率mos场效应管成型过程中,首先在外延层中形成源区,对成型的源区进行接触孔腐蚀,接触孔区域进行P+注入与原有P+区衔接形成P+区,然后进行金属淀积形成金属层,最终得到金属层与源区的N+和P+接触,工艺过程中减少了原有工艺过程中两次光刻腐蚀分别形成N+和P+的光刻过程,从而将功率MOS制造流程减少一次光刻,从而简化制造流程,降低生产成本,采用刻硅技术缩短了P+到金属层接触的路径,从而减小了寄生P+电阻,进而可抑制寄生NPN管的开启,有利于提高雪崩击穿耐量,采用先形成源区,再对成型的源区进行接触孔腐蚀,避免了由于N+浓度远高于P+浓度导致在接触孔光刻后的P+注入无法形成,则无法形成P+接触区域的麻烦。
附图说明
图1为现有mos场效应管结构示意图。
图2为本发明mos场效应管结构示意图。
图3为本发明mos场效应管进行接触孔腐蚀前结构示意图。
图4为本发明mos场效应管进行接触孔腐蚀后结构示意图。
图5为本发明mos场效应管进行接触孔区域进行P+注入后结构示意图。
其中,1、栅极;2、层间介质;3、金属层;4、外延层;5、JFET注入层。
具体实施方式
下面结合附图对本发明做进一步详细描述:
一种分立的功率mos场效应管的制造方法,具体包括以下步骤:
步骤1),首先对衬底外延层外侧进行氧化,再进行终端工艺形成终端;
具体的,对衬底外延层外侧进行氧化后依次进行终端环光刻、终端环注入、终端环推进、场氧化后形成终端;
其中衬底为N型衬底;
步骤2),然后在外延层中形成源区;
在需要形成源区的外延层中进行有源区光刻,然后进行有源区腐蚀,然后在待形成源区两侧进行JFET注入和栅氧生长,然后进行多晶硅淀积和多晶硅掺杂,然后对多晶硅淀积后区域进行多晶硅光刻和多晶硅刻蚀,然后依次进行Pbody注入、Pbody推进、N+注入、P+注入、BPSG淀积、BPSG回流最终形成源区;
步骤3),通过接触孔光刻选择要形成接触孔的区域,并进行接触孔腐蚀;
并对其他区域使用光刻胶进行保护,不被腐蚀,在接触孔腐蚀时,先将表面的介质层腐蚀掉,然后通过对硅的腐蚀,将N+区硅腐蚀掉至P+区,
步骤4),接触孔区域进行P+注入与原有P+区衔接形成P+区,然后进行金属淀积形成金属层,最终得到金属层与源区的N+和P+接触。
最终将器件的源极引出,介质层金属在接触孔底部与P+接触,将器件的衬底引出,并且与源极短接在一起,具体形成过程如图3至图5所示。
如图2所示,一种分立的功率mos场效应管,包括N型衬底以及N型衬底上的外延层,外延层上通过Pbody注入推进形成的沟道区,外延层上依次设有多晶硅形成的栅极、BPSG淀积形成的层间介质和金属层,外延层上通过N+注入形成源区,源区中的N+和P+均与金属层接触,金属层底部与P+接触,金属层两侧与N+侧壁接触,源区Pbody两侧设有JFET注入层,其中N+底线与P+上线平齐。
Claims (4)
1.一种分立的功率mos场效应管的制造方法,其特征在于,具体包括以下步骤:
步骤1),首先对衬底外延层外侧进行氧化,再进行终端工艺形成终端;对衬底外延层外侧进行氧化后依次进行终端环光刻、终端环注入、终端环推进、场氧化后形成终端;
步骤2),然后在外延层中形成源区;在需要形成源区的外延层中进行有源区光刻,然后进行有源区腐蚀,然后在待形成源区两侧进行JFET注入和栅氧生长,然后进行多晶硅淀积和多晶硅掺杂,然后对多晶硅淀积后区域进行多晶硅光刻和多晶硅刻蚀,然后依次进行Pbody注入、Pbody推进、N+注入、P+注入、BPSG淀积、BPSG回流最终形成源区;
步骤3),通过接触孔光刻选择要形成接触孔的区域,并进行接触孔腐蚀;进行接触孔腐蚀时对其他区域使用光刻胶进行保护,不被腐蚀,在接触孔腐蚀时,先将表面的介质层腐蚀掉,然后通过对硅的腐蚀,将N+区硅腐蚀掉至P+区;N+区和P+区间隔;
步骤4),接触孔区域进行P+注入与原有P+区衔接形成P+区,然后进行金属淀积形成金属层,最终得到金属层与源区的N+和 P+接触;后将器件的源极引出,金属层在接触孔底部与P+接触,将器件的衬底引出,并且与源极短接在一起;所述衬底为N型衬底;具体的金属层底部与P+接触,金属层两侧与N+侧壁接触,其中N+底线与P+上线平齐。
2.一种根据权利要求1所述制造方法得到的功率mos场效应管,其特征在于,包括衬底以及衬底上的外延层,外延层上的沟道区内设有源区,外延层上依次设有栅极、层间介质和金属层,源区中的N+和P+均与金属层接触。
3.根据权利要求2所述功率mos场效应管,其特征在于,所述衬底为N型衬底。
4.根据权利要求2所述功率mos场效应管,其特征在于,源区两侧设有JFET注入层。
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