CN106521629B - 一种获得液体硅的方法及实现该方法的坩埚 - Google Patents
一种获得液体硅的方法及实现该方法的坩埚 Download PDFInfo
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- CN106521629B CN106521629B CN201610835100.5A CN201610835100A CN106521629B CN 106521629 B CN106521629 B CN 106521629B CN 201610835100 A CN201610835100 A CN 201610835100A CN 106521629 B CN106521629 B CN 106521629B
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/10—Metal solvents
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
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CN201610835100.5A CN106521629B (zh) | 2016-09-19 | 2016-09-19 | 一种获得液体硅的方法及实现该方法的坩埚 |
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CN201610835100.5A CN106521629B (zh) | 2016-09-19 | 2016-09-19 | 一种获得液体硅的方法及实现该方法的坩埚 |
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CN106521629A CN106521629A (zh) | 2017-03-22 |
CN106521629B true CN106521629B (zh) | 2018-12-28 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN113322510B (zh) * | 2021-05-27 | 2023-05-16 | 天津理工大学 | SiC单晶生长装置及液相外延SiC单晶生长方法 |
CN114292129B (zh) * | 2021-12-13 | 2023-03-14 | 天津理工大学 | 利用溶液法在石墨件表面沉积碳化硅涂层的方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2090289U (zh) * | 1991-03-21 | 1991-12-11 | 清华大学 | 制造内壁带有槽纹的耐火材料坩埚用的压型 |
CN101473074A (zh) * | 2006-04-07 | 2009-07-01 | 丰田自动车株式会社 | 碳化硅单晶的制造方法 |
CN101796227A (zh) * | 2007-11-27 | 2010-08-04 | 丰田自动车株式会社 | 碳化硅单晶的生长方法 |
CN206173480U (zh) * | 2016-09-19 | 2017-05-17 | 山东天岳晶体材料有限公司 | 一种坩埚 |
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2016
- 2016-09-19 CN CN201610835100.5A patent/CN106521629B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2090289U (zh) * | 1991-03-21 | 1991-12-11 | 清华大学 | 制造内壁带有槽纹的耐火材料坩埚用的压型 |
CN101473074A (zh) * | 2006-04-07 | 2009-07-01 | 丰田自动车株式会社 | 碳化硅单晶的制造方法 |
CN101796227A (zh) * | 2007-11-27 | 2010-08-04 | 丰田自动车株式会社 | 碳化硅单晶的生长方法 |
CN206173480U (zh) * | 2016-09-19 | 2017-05-17 | 山东天岳晶体材料有限公司 | 一种坩埚 |
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Effective date of registration: 20190319 Address after: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee after: Shandong Tianyue Advanced Material Technology Co., Ltd. Address before: 250118 the middle part of Mei Li Lake, Huaiyin District, Ji'nan, Shandong Patentee before: Shandong Tianyue Crystal Material Co., Ltd. |
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Address after: No.99, Tianyue South Road, Huaiyin District, Jinan City, Shandong Province Patentee after: Shandong Tianyue advanced technology Co., Ltd Address before: 250100 AB Block 1106-6-01, Century Fortune Center, West Side of Xinyu Road, Jinan High-tech Zone, Shandong Province Patentee before: Shandong Tianyue Advanced Materials Technology Co.,Ltd. |
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