CN1065105A - The double crucible that the preparation semiconductor monocrystal is used - Google Patents
The double crucible that the preparation semiconductor monocrystal is used Download PDFInfo
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Abstract
The present invention relates to the double crucible that semiconductor growing is used, it is made up of inside and outside crucible, interior crucible annular wall is wherein a kind of of inverted truncated cone tubular, truncated pyramid letter shape, and interior crucible back cut diameter (the interior crucible diameter that refers to liquid level place when crystal pulling is not carried out as yet) is for the outer crucible diameter
Doubly.Its lower port diameter is the outer crucible diameter
Doubly.On the annular wall near the double crucible bottom of interior crucible, has an aperture at least.Advantage is to draw out doping agent axial distribution homogeneous semiconductor crystal, and simple in structure, is easy to make, and cost is low, and the raw semiconductor shape is not had particular requirement, observes when being convenient to crystal pulling and operation.
Description
The present invention relates to the double crucible used from fused solution crystal pulling method (CZOCHRALSKI) semiconductor single-crystal growth, the double crucible of using with semiconductor materials such as double crucible method manufacture order crystal silicon, germanium, gallium arsenide more precisely is in the production in particular for silicon single crystal rod.
Semiconductor monocrystal, particularly semiconductor silicon single crystal are the base mateirals of hyundai electronics industry.Major part is with Czochralski grown at present, just the raw semiconductor of polycrystalline state is put into quartz crucible, upwards lift with seed crystal after the heat fused, melt silicon (or germanium or gallium arsenide etc.) grows silicon single crystal (or monocrystalline germanium or monocrystalline gallium arsenide etc.) along the seed crystal crystal orientation.For the silicon single-crystal (or germanium single crystal or arsenide gallium monocrystal) that obtains to possess certain conductivity and conductivity model, need in silicon melt (or germanium melt or GaAs melt), add specific impurity and be doping agent again, to satisfy the harsh requirement of various devices.
Growing crystal the adulterated melt in being contained in crucible is a kind of normal freezing in essence, because the dephlegmation of doping agent makes the axial resistivity of crystalline occur changing continuously.
For example in the method for CZOCHRALSKI manufacture order crystal silicon, only come splendid attire raw material polysilicon with a quartz crucible, and the partition ratio of the doping agent that wherein artificial control adds is generally less than 1, situation also is like this when drawing germanium, arsenide gallium monocrystal.
Doping agent distributes vertically by the pfann formula in the crystal of pulling out
Cs＝KC
o l（1-g）
K-1
C in the formula
o lBe (or in germanium melt or GaAs melt) initial concentration of dopant in the silicon melt, g is the crystallization percentage of melt, and Cs is the concentration of doping agent in the crystal, and K is the doping agent partition ratio.Along with the carrying out of crystal pulling, i.e. the increase of g, concentration of dopant Cs increases gradually in the crystal, and the distribution of doping agent is uneven in the crystal as a result.
Make semiconducter device such as unicircuit, power electronic devices etc., all require silicon single-crystal to have specified concentration of dopant, and doping agent distributes in crystal and will evenly perhaps fill Xu Youyi variation more among a small circle.So if with single crucible method pulled crystal, yield rate is very low, and doping agent partition ratio K departs from 1 more, and yield rate is just low more.
In order to draw out the crystal that doping agent is evenly distributed vertically, many research work have been carried out.
Adopt the floating crucible device can obtain the equally distributed vertically germanium single crystal (J.Appl.phys.29.1241 of doping agent, 1958), used double crucible is that a monkey is floated at splendid attire among the melt of big crucible in this method, the bottom of monkey (claim not only in crucible) have a pipeline make in crucible communicate with crucible (but also claiming outer crucible) greatly, make the melt liquid level of inside and outside crucible be in same level.Crystal is just grown in interior crucible.Concentration by doping agent in the melt in crucible in changing and the outer crucible and keep in the crucible melt amount constant, the concentration that makes doping agent in the melt that adds to interior crucible is identical with the concentration of doping agent in pulling out crystal.In other words, if the concentration of dopant of pulling out in the crystal is KCo.Concentration of dopant is Co in the melt of interior crucible, and the concentration of doping agent is KCo in the outer crucible melt.Thereby concentration of dopant keeps constant in the assurance crystal.But because interior crucible swims in the melt.The position of interior crucible is difficult for fixing, easily rocks, and makes troubles to the operation of crystal pulling work, for the essential Ge mono crystal growth that uses silicon, gallium arsenide and the particular requirement of quartz crucible, because quartz is at high temperature softening, easily sticks on the outer crucible wall, and crystal pulling work can not be carried out smoothly.
Patent documentation EP-283903 has introduced a kind of double-deck quartz crucible that is used to draw silicon single crystal bar, this double-deck quartz crucible is made up of interior crucible and outer crucible, interior crucible and outer crucible are all made of quartzy, interior crucible is placed in the outer crucible, and under about 1350 °-1650 ℃ temperature, in making crucible and outer crucible they bottom weld together.The annular wall of interior crucible and outer crucible is all perpendicular with the end of double-deck quartz crucible.In the bottom of interior crucible annular wall two apertures are arranged, crucible communicates with outer crucible in making.When pulling monocrystal,, in packing into, for example granular polycrystalline silicon raw material in the crucible, melts crystal pulling with granular raw material.Utilize this double-deck quartz crucible can draw out the silicon crystal bar that doping agent is evenly distributed vertically, and interior crucible is fixed in the outer crucible, avoided interior crucible rocking when drawing crystal.But used raw material must be granular polycrystalline silicon raw material when utilizing this crucible to draw silicon single-crystal, can not be raw material with chunk polysilicon.If with chunk polysilicon is raw material, crucible annular wall distortion in when melt raw material, easily making, and the end of interior sidewall of crucible and double crucible, is perpendicular, and interior crucible is suitable for reading less, so the visual field is little, is not easy to observe operation inconvenience during crystal pulling when pulling monocrystal.Product percent of pass is low.
Pottery company of Toshiba has proposed a kind of Fccz method (J.Electronic Engineering.25,81-82,1988) that is used for silicon monocrystal growth, and employed double crucible is seen Fig. 1 in this method.The used double crucible of this method also is made up of interior crucible and outer crucible, interior crucible is a straight-tube shape, and its diameter is less than or equal to the outer crucible diameter
Doubly, K by the partition ratio of doping agent in the drawing crystal.In the bottom of interior crucible an elongated silica tube is arranged, crucible communicates with outer crucible in making.This elongated silica tube can not be too thin, too thin makes the molten silicon can't free flow, and its internal diameter is generally φ 5mm, and length is 150mm.The effect of the elongated silica tube of being installed is to prevent that doping agent is diffused into the outer crucible from interior crucible, allows again simultaneously melt silicon unrestricted flow.Utilize the crucible of this structure can draw out the silicon single crystal bar that doping agent is evenly distributed vertically, its shortcoming is owing to an elongated silica tube has been installed in the bottom of interior crucible, make the complex manufacturing technologyization of double-deck quartz crucible, the cost up of double-deck quartz crucible, also make crystal pulling work not carry through to the end, melt draws unclean; Interior crucible is a straight-tube shape, and the diameter of interior crucible must be less than or equal to
Outer crucible diameter doubly, the visual field is little, influence is to the observation of single crystal growing, and the crystal pulling operation is also inconvenient, and crystal growth is very limited, simultaneously because the bottom has elongated silica tube, double crucible must be made in advance, and the raw material of use must be a particulate state, otherwise the crucible distortion, and granular raw material is difficult to obtain, the also yielding obstruction of elongated silica tube.
Purpose of the present invention just is to develop a kind of new double crucible simple in structure that is used to prepare semiconductor monocrystal, make that this new double crucible is easy to make, with low cost, the raw material that is applicable to different shape is (for example block, particulate state), when drawing crystal, be convenient to again observe, be convenient to pulling operation, can draw out doping agent axial distribution homogeneous semiconductor monocrystalline again.
A kind of double crucible that semiconductor monocrystal is used that is used to prepare of the present invention, formed by interior crucible and outer crucible, interior crucible is placed in the outer crucible, the annular wall of outer crucible is a straight-tube shape, the annular wall of crucible is wherein a kind of of big young down inverted truncated cone tubular suitable for reading, big young down inverted truncated pyramid tubular suitable for reading in it, and interior crucible back cut diameter is the A of outer crucible diameter
Doubly (K is the doping agent partition ratio, the outer crucible annular wall is a straight-tube shape, and straight-tube shape can be divided into straight cylindrical or straightedge tubular, if the annular wall of outer crucible be straight cylindrical then its diameter be circular diameter, if the outer crucible annular wall is the straightedge tubular, then its diameter is the external circular diameter of Polygons; If the annular wall of interior crucible is inverted truncated cone tubular, its back cut diameter is a circular diameter suitable for reading, if the annular wall of interior crucible is inverted truncated pyramid tubular, its back cut diameter is the external circular diameter of Polygons suitable for reading, crucible diameter in liquid level place when interior crucible back cut diameter refers to that crystal pulling does not begin as yet, actual suitable for readingly can exceed liquid level, down with) interior crucible lower port diameter is the B of outer crucible diameter
Doubly, A=1.1～1/ wherein
, B=0.8～1.0, irrelevant with the height of interior crucible.Bottom near double crucible on interior crucible annular wall has an aperture at least, and crucible communicates with outer crucible in making.If the radius of outer crucible is R, then interior crucible back cut diameter is 2A
R.Its lower port diameter is 2B
R.
The end of the outer crucible in the double crucible of the present invention, can be curved surface, also can be the plane, and its annular wall can be wherein a kind of of straightedge tubular, straight cylindrical, again with straight cylindrical for well.The annular wall of interior crucible can be advisable with big young inverted truncated cone tubular down suitable for reading for young too down inverted truncated pyramid tubular suitable for reading or big young inverted truncated cone tubular down suitable for reading, makes because be convenient to.Interior crucible can not have the end, and with the end of outer crucible be its end, the end, can also be arranged, with the no end for well, can save starting material like this, be convenient to again make, interior crucible, outer crucible are generally used quartz material.If drawing germanium single crystal can make with graphite material.Interior crucible and outer crucible are preferably coaxial.Double crucible is if make of quartzy, and interior crucible and outer crucible are isolating before the melting semiconductor raw material, and after the raw semiconductor fusing, both are welded together in the outer crucible.
When using double crucible pulling monocrystal of the present invention, the poly semiconductor raw material (its raw material polysilicon can be that bulk can also be a particulate state during pulling monocrystal silicon) of at first in outer crucible, packing into, melting semiconductor raw material in 900 °-1650 ℃ temperature range, the temperature of melting semiconductor raw material is decided on different raw semiconductors, melting polycrystalline silicon with in 1450 °-1650 ℃ temperature range for well, fusing germanium polycrystalline is at 960 ℃～1100 ℃, and the fusing gallium arsenide polycrystal is between 1250 °～1350 ℃.After the fusing of poly semiconductor raw material, with one of ordinary skill in the art's method pulling monocrystal in common knowledge.By the lower shaft upward movement or with simple mechanical manipulator on the body of heater interior crucible is put into outer crucible, utilize the high temperature (utilizing the high temperature of melted silicon during melting polycrystalline silicon) of fusing poly semiconductor raw material automatically interior crucible and outer crucible to be in the same place in their bottom weld, form a complete double crucible (, then can directly make the double crucible that fuses) if make double crucible with graphite material.After the temperature adjustment is suitable, inwardly mix the doping agent of requirement in the melt of crucible, constituting concentration of dopant is the melt of Co.The concentration of dopant of the melt between outer crucible and the interior crucible is zero.The seed crystal that is fixed in axle is dropped on the melt liquid level, seed crystal is contacted with melt, rotate seed crystal simultaneously, make the sense of rotation of double crucible opposite with the sense of rotation of seed crystal, crystal just can be by temperature and upwards lift seed crystal speed control and grow, the concentration of doping agent just is KCo in the crystal.Along with the carrying out of crystal pulling, purified melt constantly flows in the interior crucible by the aperture near the double crucible bottom on the interior crucible annular wall in the outer crucible.
Bottom near double crucible on the annular wall of interior crucible has an aperture at least, aperture more the end near double crucible good more.The number of aperture is 1-4, but with 2-3 for well.If aperture is more than two, it distributes with symmetric form for better.The shape of aperture can be wherein a kind of of different shapes such as circle, semicircle, square, rectangle, trilateral, Polygons.The sectional area of aperture is with 5mm
2～30mm
2Be advisable.If aperture be shaped as semicircle, then its diameter is 3-5mm for well.The size of aperture will strictly be controlled, and its size wants to allow melt circulate, and can make doping agent be reduced to bottom line to the diffusion of outer crucible again.
Doping agent partition ratio K is generally less than 1, and for example the partition ratio K of doping agent phosphorus is 0.35 in the silicon, and the partition ratio K of boron is 0.80, and arsenic is 0.30, and the partition ratio K of doping agent is decided by semiconductor species and doping agent thereof.
When doping agent begins in crystal growth, enrichment is not obvious in melt, but carrying out along with the crystal pulling process, because the partition ratio K of doping agent is generally less than 1, the enrichment of the doping agent in the melt of interior crucible because of dephlegmation, the dopant dose of pulling out in the crystal is less than with the dopant dose in the melt of volume, make that the concentration of doping agent increases in the melt, along with the reduction of interior crucible melt liquid level, the smaller volume of melt in the crucible in making, this more makes the concentration of doping agent in the melt increase.In the early stage of crystal pulling, the melt of crucible was not contain doping agent in outer crucible replenished and to enter, and the doping agent in can making in the crucible obtains dilution, in keeping in the crucible concentration of doping agent constant, thereby make the constant concentration of the doping agent in the crystal of growth.Utilize the interior crucible of straight-tube shape, as long as the diameter of interior crucible is the outer crucible diameter
Doubly, also can realize this purpose.But, because the passage of crucible and outer crucible melt is an aperture in connecting, it or not an elongated silica tube, doping agent in the interior crucible can spread to outer crucible by this aperture, make that original purified melt has contained doping agent in the outer crucible, restock is during to interior crucible, the doping agent of enrichment in the crucible in just being not enough to dilute fully.But because the annular wall of the interior crucible among the present invention is suitable for reading big, young down inverted truncated cone tubular or big young inverted truncated pyramid tubular down suitable for reading, the melt amount of crucible was more and more in outer crucible added to, in the later stage of crystal growth, even if the melt in the outer crucible has contained a certain amount of doping agent at this moment, doping agent in also can diluting in the crucible makes the concentration of dopant in the crystal keep constant.
The elongated silica tube of crucible bottom in a kind of advantage for preparing the double crucible that semiconductor monocrystal uses of the present invention just is to have removed in the double crucible of prior art, interior crucible annular wall is suitable for reading big, young down, only replace its elongated silica tube with the aperture near the double crucible bottom on the interior sidewall of crucible, simple in structure, be easy to make, with low cost, be applicable to the raw semiconductor of different shapes such as bulk, particulate state, and crystal pulling can proceed to and the same degree of conventional single crucible, can fully pull out raw semiconductor.And back cut diameter is greater than the outer crucible diameter
Doubly, operation when being convenient to crystal pulling and observation.
Machine analog calculation as calculated, when adopting the outer crucible of straight cylindrical annular wall of diameter phi 250mm, the uniformly interior crucible size of doping agent axial distribution is the back cut diameter φ 200mm of inverted truncated cone tubular annular wall in the maintenance crystal, lower port diameter φ 150mm, adopting the then interior crucible diameter of interior crucible of straight cylindrical is the doping agent of φ 150mm(for K=0.35).Actual test shows that owing to the doping agent external diffusion that has by aperture to a certain degree, upper and lower mouthful of size of interior crucible earthenware of the present invention should slightly be dwindled, and is back cut diameter φ 180mm, lower port diameter φ 130mm; And if the interior crucible of employing straight cylindrical is communicated with interior crucible and outer crucible with aperture equally, then the diameter of interior crucible is about φ 130mm.Because its diameter only is φ 130mm, will hinder pulling operation, also be not easy to during crystal pulling observe.Double crucible of the present invention both had been convenient to observe when crystal pulling, was convenient to the operation of crystal pulling again.
Experiment shows when being 5mm with the semicircle hole diameter on the interior crucible of the present invention, the initial crystal pulling liquid level that uses is in diameter and is φ 130mm, the outer crucible diameter is φ 200mm, what draw φ 50-75mm mixes the phosphorus dislocation-free monocrystalline silicon, obtained resistivity vertically unevenness less than 10% good result, with to compare effect with the Fccz method of double crucible that elongated quartz pipe is arranged suitable, and be that uneven degree is greater than 50% with the Fccz method of the double crucible of no elongated quartz pipe.Common single crucible rule unevenness reaches about 180% (being reference with the amount of pulling out 80% all).Its experiment the results are shown in Figure 2.
Double crucible of the present invention is applicable to drawing large-scale integrated circuit, the vertical pulling method of silicon single-crystal, germanium single crystal and arsenide gallium monocrystal that various devices such as power electronic devices, transistor, solar cell, luminescent device are used and the vertical pulling method under the magnetic field, make resistivity along crystal axis to evenly, increase substantially the resistivity hit rate, and can weaken thermal convection more, improve crystal mass.Especially for silicon single-crystal, oxygen level and microdefect are controlled, cooperated with magnetic field to make during oxygen level is reduced in the crystal low-levelly, double crucible of the present invention ties up to and just puts into crucible in the outer crucible behind the melt, raw material and equipment there are not special requirement, simple and easy to do.So double crucible applied range of the present invention.
With pulling monocrystal silicon is example, crystal pulling method is adopted in the production of domestic present silicon single-crystal about 60%, what use all is single crucibles, about more than 20 of the total imported large-scale single crystal growing furnace of each manufacturer, if therein 1/5 on promote double crucible of the present invention, promptly about 5, draw 3 cun silicon single-crystal, produce 1 ton of calculating, about 7,500,000 yuan of total value per year with every.If used double crucible of the present invention, monocrystalline resistivity hit rate is increased substantially, the additional cost of deduction double crucible, the comprehensive cost of monocrystalline can reduce 10-20%.Can year increase ten thousand yuan of profit 75-150 like this.Double crucible of the present invention has bigger economic benefit.
Fig. 1 has the sectional view of the double crucible of elongated silica tube
(1) be that crystal (2) is the interior crucible of outer crucible (3)
(4) the elongated silica tube of melt (5)
The theoretical distribution and the employing of doping agent phosphorus during the crystal pulling of Fig. 2 list crucible
Comparison during the double crucible crystal pulling of the interior crucible of the only foraminate straight cylindrical of double crucible of the present invention and no elongated silica tube in the doping agent phosphorus distribution.
Ordinate zou among Fig. 2: the normalization method concentration of dopant [C(g)/C(o)]
X-coordinate: the crystallization percentage of melt (g)
● the theoretical concentration of phosphorus (single crucible)
△ adopts the only experimental value of the double crucible of the interior crucible of foraminate straight cylindrical of no elongated silica tube.
Zero adopts the experimental value of double crucible of the present invention
The sectional view of Fig. 3 double crucible of the present invention
(6) be the interior crucible of crystal (7) outer crucible (8)
(9) melt (10) aperture
Following indefiniteness embodiment is just in order to further specify the present invention, rather than as the qualification to protection domain of the present invention, protection scope of the present invention is decided by claim.
Embodiment
Used double crucible of the present invention as shown in Figure 3 in the present embodiment.With the straight cylindrical of diameter phi 200mm, the end, place graphite tray (not shown) for the quartz system outer crucible (7) at the bottom of the slightly recessed curved surface, in outer crucible (7), put into 6 kilograms the block raw material of polysilicon, make it fusing with the heating of graphite resistance heater (not shown).Then with high 90mm, actual diameter phi 150mm suitable for reading, lower port diameter φ 110mm, there are two positions symmetric near place, double crucible bottom on the annular wall of inverted truncated cone tubular, crucible (8) (the no end of interior crucible (8) in the quartz system of the circular aperture of diameter phi 3mm (10), the end with outer crucible is the end) put into melt (9), at (about 1420 ℃) under the high temperature of silicon melt, make interior crucible (8) and outer crucible (7) together in bottom weld, like this melt is divided into two portions, the diameter of interior crucible (8) at the melt liquid level place is φ 140mm.After adjusting the position and temperature of melt liquid level with respect to the well heater (not shown), load weighted phosphorus one silicon alloy is dropped in the melt of interior crucible (8), make its concentration of dopant be the desire concentration of dopant that draws crystal (6) 1/K doubly, K is the partition ratio (K=0.35) of phosphorus in silicon single crystal.The seed crystal of selected crystal orientation (as＜111 〉) is inserted in the melt, adjust temperature and upwards lift the speed of seed crystal, draw monocrystalline from the melt of interior crucible, the thin neck that contracts is got rid of dislocation, is amplified to diameter phi 80mm again, grows thereby carry out equal diameter.The time to the equal diameter growth was controlled at about 60 minutes the crucible melt in phosphorus-silicon alloy input.The pull rate of equal diameter growth is that 1.2mm/min(generally can be controlled between 1.0～1.5mm/min).For keeping melt liquid level constant with respect to heater locations, double crucible rises with the speed (generally being controlled between the 0.14-0.22mm/min) of 0.18mm/min.Double crucible rotates the hot asymmetry that may exist to eliminate with the speed (generally caning be controlled between the 0.1-10rpm) of 5rpm.Crystal to the double crucible opposite spin, with the cylinder crystal ingot of growing straight, and improves the radial distribution homogeneity of impurity (doping agent phosphorus and oxygen) with the speed (generally caning be controlled between the 15-30rpm) of 20rpm.
In the starting stage of crystal growth, interior crucible diameter is bigger, and the used up melt of crystal growth has sub-fraction to be replenished near the aperture of double crucible bottom on interior crucible annular wall by outer crucible.Because the partition ratio K of phosphorus is 0.35 only, only some enters crystal to the doping agent phosphorus in the melt, all the other enrichments in interior crucible, the trend that has the concentration of the doping agent phosphorus in the crucible in making to raise.But in this moment in the crucible volume of melt bigger, the concentration of doping agent phosphorus raises not obvious, and is the pure silicon liquation by the melt that outer crucible replenishes into, is enough to doping agent in the interior crucible is diluted to the concentration of crystal growth.
Carrying out along with crystal growth, some meeting of doping agent in the interior crucible is by being diffused in the outer crucible near the aperture at the bottom of the double crucible on the interior crucible annular wall, the concentration of doping agent that makes the outer crucible melt is greater than zero, but still the concentration of the doping agent in the crucible in being lower than.At this moment, interior crucible is directly through dwindling gradually, the melt that outer crucible replenishes into increases gradually, therefore, though cover the melt that comes this moment no longer is the pure silicon melt, but contain a certain amount of doping agent phosphorus (its concentration is still less than the concentration of doping agent in the interior crucible), in also making in the crucible concentration of doping agent maintain level before the crystal growth.
After the about 350mm length of crystal growth, crystallising part is about 70% of raw material gross weight.Controlled temperature and pulling rate, it is thin that crystal is received, and leaves remainder melt with point-like gradually, produces dislocation and return in the dislocation-free crystal ingot to prevent afterbody.Resulting dislocation-free monocrystalline silicon ingot after the hot alms giver's effect through eliminating oxygen, has rangeability less than 10% the axially distribution of phosphorus dopant uniformly, can be used in the making of various semiconducter device such as unicircuit.
Claims (5)
1, a kind ofly is used to prepare the double crucible that semiconductor monocrystal is used, formed by interior crucible and outer crucible, interior crucible is placed in the outer crucible, the annular wall of outer crucible is a straight-tube shape, feature of the present invention is, the annular wall of interior crucible is suitable for reading big, wherein a kind of of following young inverted truncated cone tubular, inverted truncated pyramid tubular, and interior crucible back cut diameter (diameter that refers to crucible in the liquid level place when crystal pulling does not begin as yet) is the A of outer crucible diameter
Doubly (K is the doping agent partition ratio), interior crucible lower port diameter is the B of outer crucible diameter
Doubly, A=1.1～1/ wherein
, the θ of B=θ .8 θ～1., the bottom near double crucible on interior crucible annular wall has an aperture at least.
2, a kind of being used to according to claim 1 prepares the double crucible that semiconductor monocrystal is used, and it is characterized in that, there is 1-4 aperture the bottom near double crucible on the annular wall of interior crucible.
3, a kind of being used to according to claim 1 prepares the double crucible that semiconductor monocrystal is used, and it is characterized in that, aperture is wherein a kind of of circle, semicircle, square, rectangle, trilateral, Polygons.
4, a kind of being used to according to claim 1 prepares the double crucible that semiconductor monocrystal is used, and it is characterized in that the sectional area of aperture is 5mm
2～30mm
2
5, a kind of being used to according to claim 1 prepares the double crucible that semiconductor monocrystal is used, and it is characterized in that, aperture is semicircle, and its diameter is 3-5mm.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 91101682 CN1065105A (en) | 1991-03-21 | 1991-03-21 | The double crucible that the preparation semiconductor monocrystal is used |
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| CN 91101682 CN1065105A (en) | 1991-03-21 | 1991-03-21 | The double crucible that the preparation semiconductor monocrystal is used |
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| CN101886288A (en) * | 2010-07-09 | 2010-11-17 | 浙江碧晶科技有限公司 | Double-layer crucible for growing silicon single crystals by directional solidification method |
| CN102168302A (en) * | 2011-04-13 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Double-quartz-crucible device and method for producing czochralski silicon single crystal |
| CN102260900A (en) * | 2011-07-14 | 2011-11-30 | 西安华晶电子技术股份有限公司 | Device for improving consistency of longitudinal resistivity of single crystal silicon and treatment process thereof |
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- 1991-03-21 CN CN 91101682 patent/CN1065105A/en active Pending
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| CN101886288A (en) * | 2010-07-09 | 2010-11-17 | 浙江碧晶科技有限公司 | Double-layer crucible for growing silicon single crystals by directional solidification method |
| CN103282555B (en) * | 2010-12-28 | 2016-08-17 | 硅电子股份公司 | Silicon single crystal manufacture method, silicon single crystal and wafer |
| CN103282555A (en) * | 2010-12-28 | 2013-09-04 | 硅电子股份公司 | Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| CN102168302B (en) * | 2011-04-13 | 2012-11-07 | 天津市环欧半导体材料技术有限公司 | Double-quartz-crucible device and method for producing czochralski silicon single crystal |
| CN102168302A (en) * | 2011-04-13 | 2011-08-31 | 天津市环欧半导体材料技术有限公司 | Double-quartz-crucible device and method for producing czochralski silicon single crystal |
| CN102260900A (en) * | 2011-07-14 | 2011-11-30 | 西安华晶电子技术股份有限公司 | Device for improving consistency of longitudinal resistivity of single crystal silicon and treatment process thereof |
| CN102260900B (en) * | 2011-07-14 | 2013-11-27 | 西安华晶电子技术股份有限公司 | Device for improving consistency of longitudinal resistivity of single crystal silicon and treatment process thereof |
| CN109850905A (en) * | 2019-04-16 | 2019-06-07 | 大连理工大学 | A kind of electron-beam smelting improves the method and device of volatile impurity removal of impurities amount in the process |
| CN110029395A (en) * | 2019-04-18 | 2019-07-19 | 邢台晶龙电子材料有限公司 | CCZ continuous crystal-pulling crucible and coating process |
| CN111485283A (en) * | 2020-05-15 | 2020-08-04 | 广东先导稀材股份有限公司 | Crystal growth device and method |
| CN112725882A (en) * | 2020-12-18 | 2021-04-30 | 清远先导材料有限公司 | Crucible and preparation method thereof and preparation method of yttrium lutetium silicate crystal |
| CN112725882B (en) * | 2020-12-18 | 2023-12-01 | 清远先导材料有限公司 | Crucible and preparation method thereof, and preparation method of lutetium yttrium silicate crystal |
| CN117702275A (en) * | 2024-02-05 | 2024-03-15 | 浙江康鹏半导体有限公司 | Indium phosphide single crystal growth method based on double-layer crucible |
| CN117702275B (en) * | 2024-02-05 | 2024-04-19 | 浙江康鹏半导体有限公司 | Indium phosphide single crystal growth method based on double-layer crucible |
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