CN110029395A - CCZ continuous crystal-pulling crucible and coating process - Google Patents
CCZ continuous crystal-pulling crucible and coating process Download PDFInfo
- Publication number
- CN110029395A CN110029395A CN201910312944.5A CN201910312944A CN110029395A CN 110029395 A CN110029395 A CN 110029395A CN 201910312944 A CN201910312944 A CN 201910312944A CN 110029395 A CN110029395 A CN 110029395A
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- crucible
- ccz
- pulling
- inner ring
- continuous crystal
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- 238000000576 coating method Methods 0.000 title claims abstract description 25
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 239000002210 silicon-based material Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 15
- 238000002844 melting Methods 0.000 claims abstract description 4
- 230000008018 melting Effects 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 17
- 229910052788 barium Inorganic materials 0.000 claims description 10
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000013043 chemical agent Substances 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 238000005507 spraying Methods 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000007921 spray Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 229910052571 earthenware Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5007—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with salts or salty compositions, e.g. for salt glazing
- C04B41/501—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with salts or salty compositions, e.g. for salt glazing containing carbon in the anion, e.g. carbonates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/002—Continuous growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention provides a kind of CCZ continuous crystal-pulling crucible and coating processes, belong to semiconductor material preparation technical field, including outer crucible and crucible inner ring, outer crucible is for accommodating silicon material to be melted；Crucible inner ring is set in outer crucible, lower end offsets with outer crucible inner wall, its internal growing space formed for crystal growth, forms the charging space for accommodating silicon material between outside and outer crucible, crucible inner ring is equipped with the material hole for entering growing space for the silicon material of melting.CCZ continuous crystal-pulling crucible provided by the invention and coating process are able to extend pot life, improve monocrystalline silicon quality.
Description
Technical field
The invention belongs to technical field of semiconductor material preparation, are to be related to a kind of CCZ continuous crystal-pulling earthenware more specifically
The coating process of crucible and the crucible.
Background technique
Currently, monocrystalline pull-rod technology is from multiple charging crystal pulling (RCZ) to continuous crystal-pulling (CCZ) transition.CCZ can have
Effect reduces time, crucible cost and the energy consumption of monocrystalline pull-rod, and CCZ output crystal bar resistivity is more uniform, distribution is narrower,
Quality is higher.The silica crucible for the high-quality that CCZ also needs the service life to reach 500 hours, and existing vertical pulling method crucible and more
The service life and quality of the crucible of secondary charging crystal pulling are not able to satisfy the demand of continuous crystal-pulling, it is therefore desirable to crucible into
Row is further to be improved.
Summary of the invention
The purpose of the present invention is to provide a kind of CCZ continuous crystal-pulling crucible, with solve existing crucible life it is short, cannot be very
The technical problems such as continuous crystal-pulling technology, monocrystalline silicon is of poor quality are adapted to well.
To achieve the above object, the technical solution adopted by the present invention is that: a kind of CCZ continuous crystal-pulling crucible is provided, comprising:
Outer crucible, for accommodating silicon material to be melted；
Crucible inner ring is set in the outer crucible, and lower end offsets with the outer crucible inner wall, and internal formed is used for
The growing space of crystal growth forms the charging space for accommodating silicon material, the crucible between outside and the outer crucible
Inner ring is equipped with the material hole for entering the growing space for the silicon material of melting.
Further, the bottom of the outer crucible is recessed arcwall face, the lower end of the crucible inner ring and the arc
Face offsets, and the crucible inner ring and the outer crucible are coaxial.
Further, the radian of the arcwall face is R100-R500.
Further, the bottom of the outer crucible and the intersection of its side wall are arc transiting surface.
Further, the radian of the arc transiting surface is R80-R150.
Further, the outer crucible with a thickness of 10mm-15mm, the thickness of the crucible inner ring 8mm-15mm it
Between.
Further, the height of the crucible inner ring is lower than the height of the outer crucible, difference in height 5mm-15mm.
Further, the inner wall of the outer crucible and the inside and outside wall of the crucible inner ring are evenly coated with coating respectively.
Further, the material of the coating is barium element, or including at least the compound of barium element, crucible surface
Coating amount is 2g/ ㎡ -10g/ ㎡.
Another object of the present invention is to provide a kind of coating processes of crucible, comprising:
Cleaning, cleans crucible, carries out configuration cleaning solution using hydrofluoric acid and nitric acid, proportion 1:5 to 2:1 it
Between；
Drying, dries the crucible after cleaning；
Spraying carries out coating to crucible surface using chemical agent, and the chemical agent is barium element, or is at least wrapped
The compound of baric element, coating crucible surface amount are 2g/ ㎡ -10g/ ㎡.
The beneficial effect of CCZ continuous crystal-pulling crucible provided by the invention is: compared with prior art, CCZ of the present invention connects
Continuous crystal pulling crucible, has outer crucible and crucible inner ring, is charging space between outer crucible and crucible inner ring, is in crucible inner ring
Crystal growth space, silicon material melt in charging space, enter in crucible inner ring through the material hole in crucible inner ring, carry out crystal
Growth, melt and crystal pulling carry out simultaneously, and charging space and growing space separate, and it is empty that the silicon material being just added will not enter growth
Between, thus the growing space melt of crystal uniformly, temperature, can make that resistivity is more uniform, distribution is more concentrated
Crystal bar；Also it can reduce and avoid the impurity in melt to enter growing space, reduce the defect of monocrystalline silicon, improve monocrystalline silicon
Quality, therefore have both that minority carrier life time is high, dislocation density is low and the advantages such as inexpensive.
Meanwhile coating plays the role of extension to the CCZ continuous crystal-pulling service life, reasonable quantity for spray can extend crucible in high temperature
Time during crystal pulling, extend pot life to greatest extent.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, embodiment or the prior art will be retouched below
Attached drawing needed in stating is briefly described, it should be apparent that, the accompanying drawings in the following description is only of the invention one
A little embodiments for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other attached drawings.
Fig. 1 is the structural schematic diagram of crucible provided in an embodiment of the present invention.
Wherein, marked in the figure:
1- outer crucible；2- crucible inner ring；3- material hole；The growing space 4-；5- charging space.
Specific embodiment
In order to which technical problems, technical solutions and advantages to be solved are more clearly understood, tie below
Accompanying drawings and embodiments are closed, the present invention will be described in further detail.It should be appreciated that specific embodiment described herein is only
Only to explain the present invention, it is not intended to limit the present invention.
Referring to Fig. 1, existing be illustrated CCZ continuous crystal-pulling crucible provided by the invention.The CCZ continuous crystal-pulling earthenware
Crucible, including outer crucible 1 and crucible inner ring 2, outer crucible 1 is for accommodating silicon material to be melted；Crucible inner ring 2 is set to outer crucible 1
Interior, lower end offsets with 1 inner wall of outer crucible, internal to form the growing space 4 for being used for crystal growth, it is external with outer crucible 1 it
Between form the charging space 5 for accommodating silicon material, crucible inner ring 2, which is equipped with, enters the logical of growing space 4 for the silicon material of melting
Expect hole 3.
CCZ continuous crystal-pulling crucible provided by the invention, compared with prior art, the space 5 that feeds is in outer crucible 1 and crucible
It is crystal growth space 4 in crucible inner ring 2, silicon material melts in charging space 5, through the logical material in crucible inner ring 2 between inner ring 2
Hole 3 enters in crucible inner ring 2, carries out crystal growth, and melt and crystal pulling carry out simultaneously, and charging space 5 and growing space 4 every
It opens, the silicon material being just added will not enter growing space 4, therefore 4 melt of growing space of crystal is uniform, temperature, can make
Make that resistivity is more uniform, the crystal bar more concentrated of distribution；Also it can reduce and avoid the impurity in melt to enter growing space
4, the defect of monocrystalline silicon is reduced, the quality of monocrystalline silicon is improved, therefore has both that minority carrier life time is high, dislocation density is low and inexpensive etc.
Advantage.
Wherein, the charging space 5 between outer crucible 1 and crucible inner ring 2, which can satisfy, holds wanting for 50-200kg silicon material
It asks.
Wherein, to avoid the impurity in melt from entering growing space 4, material hole 3 is provided with the lower end of crucible inner ring 2, this
Sample makes melt enter growing space 4 from bottom, conducive to the temperature and purity for keeping melt.Wherein, the shape of material hole 3 can be with
For circle, ellipse, regular polygon etc., the quantity of material hole 3 can be one, two, three etc., and multiple material holes 3 are in earthenware
The lower end of crucible inner ring 2 is simultaneously circumferentially uniformly distributed.
Referring to Fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, outer crucible 1
Bottom be recessed arcwall face, lower end and the arcwall face of crucible inner ring 2 offset, and crucible inner ring 2 and outer crucible 1 are coaxial.
Referring to Fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, the arc
The radian in face is R100-R500.For example, radian can be the numerical value such as 120,130,200,300,400, namely 100 to 500
Between any value, no longer enumerated here.
Refering to fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, the outer crucible
1 bottom and the intersection of its side wall are arc transiting surface.
Referring to Fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, the arc
The radian of transition face is R80-R150.Radian is chosen as any between 90,100,110,120,140 etc. namely 80 to 150
Numerical value.Among the above, the design of 1 bottom radian of outer crucible, 1 bottom and side wall intersection radian of outer crucible, it is therefore an objective to reduce solid
Silicon material washes away crucible, extends the service life of crucible.
Referring to Fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, outer crucible 1
With a thickness of 10mm-15mm.For example, with a thickness of 11mm, 12mm, 13mm, 14mm etc..The thickness of crucible inner ring is in 8mm-15mm
Between.
Referring to Fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, crucible inner ring
2 height is lower than the height of outer crucible 1, difference in height 5mm-15mm.
Referring to Fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, outer crucible 1
Inner wall and crucible inner ring inside and outside wall respectively uniformly be coated with coating.Crucible coating layer is uniform, and stable quantity for spray connects CCZ
The continuous crystal pulling service life plays the role of extension, and reasonable quantity for spray can extend crucible and use time, maximum during high temperature crystal pulling
Limit extends pot life, can meet crucible using the time in 250h or more.
Refering to fig. 1, a kind of specific embodiment as CCZ continuous crystal-pulling crucible provided by the invention, the coating
Material is barium element, or including at least the compound of barium element, and purity reaches 99.999% or more.For example, compound is
Barium carbonate and saturation barium hydroxide, coating crucible surface amount are 2g/ ㎡ -10g/ ㎡.
The present invention also provides a kind of coating processes of crucible, comprising:
Cleaning, cleans crucible, carries out configuration cleaning solution using hydrofluoric acid and nitric acid, proportion 1:5 to 2:1 it
Between；
Drying, dries the crucible after cleaning；
Spraying carries out coating to crucible surface using chemical agent, and the chemical agent is barium element, or is at least wrapped
The compound of baric element, coating crucible surface amount are 2g/ ㎡ -10g/ ㎡.
It is cleaned before coating, keeps the cleaning of crucible, prevent impurity from retaining inside crucible, crucible coating layer packet
Control containing the quantity for spray to crucible chemical agent is kept uniformly, and quantity for spray is between 2g/ ㎡ -10g/ ㎡, stable spraying
Amount plays the role of extension to the CCZ continuous crystal-pulling service life, and reasonable quantity for spray can extend crucible time during high temperature crystal pulling,
Extend pot life 50h or more to greatest extent, crucible can be met using the time in 250h or more.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Made any modifications, equivalent replacements, and improvements etc., should all be included in the protection scope of the present invention within mind and principle.
Claims (10)
1.CCZ continuous crystal-pulling crucible characterized by comprising
Outer crucible, for accommodating silicon material to be melted；
Crucible inner ring is set in the outer crucible, and lower end offsets with the outer crucible inner wall, internal to be formed for crystal life
Long growing space, it is external to form the charging space for accommodating silicon material between the outer crucible, in the crucible inner ring
Enter the material hole of the growing space equipped with the silicon material for melting.
2. CCZ continuous crystal-pulling crucible as described in claim 1, which is characterized in that the bottom of the outer crucible is recessed arc
Shape face, lower end and the arcwall face of the crucible inner ring offset, and the crucible inner ring and the outer crucible are coaxial.
3. CCZ continuous crystal-pulling crucible as claimed in claim 2, which is characterized in that the radian of the arcwall face is R100-
R500。
4. CCZ continuous crystal-pulling crucible as claimed in claim 2, which is characterized in that the bottom of the outer crucible and its side wall
Intersection is arc transiting surface.
5. CCZ continuous crystal-pulling crucible as claimed in claim 4, which is characterized in that the radian of the arc transiting surface is R80-
R150。
6. CCZ continuous crystal-pulling crucible as described in claim 1, which is characterized in that the outer crucible with a thickness of 10mm-
15mm, the thickness of the crucible inner ring is between 8mm-15mm.
7. CCZ continuous crystal-pulling crucible as described in claim 1, which is characterized in that the height of the crucible inner ring is lower than described
The height of outer crucible, difference in height 5mm-15mm.
8. CCZ continuous crystal-pulling crucible as described in claim 1, which is characterized in that the inner wall of the outer crucible and the crucible
The inside and outside wall of inner ring is evenly coated with coating respectively.
9. CCZ continuous crystal-pulling crucible as claimed in claim 8, which is characterized in that the material of the coating is barium element, or
Including at least the compound of barium element, coating crucible surface amount is 2g/ ㎡ -10g/ ㎡.
10. such as the coating process of the described in any item crucibles of claim 1-9 characterized by comprising
Cleaning, cleans crucible, carries out configuration cleaning solution using hydrofluoric acid and nitric acid, proportion is in 1:5 between 2:1；
Drying, dries the crucible after cleaning；
Spraying carries out coating to crucible surface using chemical agent, and the chemical agent is barium element, or includes at least barium member
The compound of element, coating crucible surface amount are 2g/ ㎡ -10g/ ㎡.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910312944.5A CN110029395A (en) | 2019-04-18 | 2019-04-18 | CCZ continuous crystal-pulling crucible and coating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910312944.5A CN110029395A (en) | 2019-04-18 | 2019-04-18 | CCZ continuous crystal-pulling crucible and coating process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110029395A true CN110029395A (en) | 2019-07-19 |
Family
ID=67238913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201910312944.5A Pending CN110029395A (en) | 2019-04-18 | 2019-04-18 | CCZ continuous crystal-pulling crucible and coating process |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065105A (en) * | 1991-03-21 | 1992-10-07 | 北京有色金属研究总院 | The double crucible that the preparation semiconductor monocrystal is used |
| CN1160779A (en) * | 1996-01-12 | 1997-10-01 | 三菱麻铁里亚尔硅材料株式会社 | Single crystal fulling apparatus |
| CN101855179A (en) * | 2007-09-07 | 2010-10-06 | 莫门蒂夫性能材料股份有限公司 | Quartz glass crucibles and the method for handling surface of quartz glass crucible |
| CN102363899A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Quartz crucible used for continuous material charging |
| CN102995108A (en) * | 2012-11-27 | 2013-03-27 | 无锡市蓝德光电科技有限公司 | Continuous charging silicon single crystal furnace |
| CN103502513A (en) * | 2012-01-13 | 2014-01-08 | 信越石英株式会社 | Silica vessel for pulling monocrystalline silicon and method for producing same |
| CN104342750A (en) * | 2013-08-08 | 2015-02-11 | 徐州协鑫太阳能材料有限公司 | Quartz crucible and preparation method thereof |
| CN210104124U (en) * | 2019-04-18 | 2020-02-21 | 邢台晶龙电子材料有限公司 | CCZ continuous crystal pulling crucible |
-
2019
- 2019-04-18 CN CN201910312944.5A patent/CN110029395A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1065105A (en) * | 1991-03-21 | 1992-10-07 | 北京有色金属研究总院 | The double crucible that the preparation semiconductor monocrystal is used |
| CN1160779A (en) * | 1996-01-12 | 1997-10-01 | 三菱麻铁里亚尔硅材料株式会社 | Single crystal fulling apparatus |
| CN101855179A (en) * | 2007-09-07 | 2010-10-06 | 莫门蒂夫性能材料股份有限公司 | Quartz glass crucibles and the method for handling surface of quartz glass crucible |
| CN102363899A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Quartz crucible used for continuous material charging |
| CN103502513A (en) * | 2012-01-13 | 2014-01-08 | 信越石英株式会社 | Silica vessel for pulling monocrystalline silicon and method for producing same |
| CN102995108A (en) * | 2012-11-27 | 2013-03-27 | 无锡市蓝德光电科技有限公司 | Continuous charging silicon single crystal furnace |
| CN104342750A (en) * | 2013-08-08 | 2015-02-11 | 徐州协鑫太阳能材料有限公司 | Quartz crucible and preparation method thereof |
| CN210104124U (en) * | 2019-04-18 | 2020-02-21 | 邢台晶龙电子材料有限公司 | CCZ continuous crystal pulling crucible |
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