CN1109778C - Re-doping method for vertically pulled monocrystalline silicon - Google Patents
Re-doping method for vertically pulled monocrystalline silicon Download PDFInfo
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- CN1109778C CN1109778C CN 00122075 CN00122075A CN1109778C CN 1109778 C CN1109778 C CN 1109778C CN 00122075 CN00122075 CN 00122075 CN 00122075 A CN00122075 A CN 00122075A CN 1109778 C CN1109778 C CN 1109778C
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Abstract
The present invention discloses a heavy doping method for the growth of Czochralski silicon single crystals. The method comprises the procedures: 1. a 'umbrella-shaped' doping device is made of high-purity silicon, and the 'umbrella handle' is seed crystals; 2. the umbrella-shaped' doping device is inversely clamped on a seed crystal clamping head; 3. doping agents are poured in the doping device; 4. after polysilicon is melted, the seed crystals are reduced, and the doping device is immersed in the silicon fusant. The present invention avoids explosion caused by the sudden heat of the doping agents by slowly entering melted silicon through the doping device, and doping quantity can be controlled well. Meanwhile, single crystal furnace chambers are ensured to be clean, which is favorable to the growth of single crystals. The growth of silicon single crystals of heavily-doped phosphorus, heavily-doped arsenium and heavily-doped antimony is carried out, and the present invention has obvious economic benefits.
Description
The present invention relates to a kind of heavy doping method of czochralski silicon monocrystal growth.
Along with the continuous development of semiconducter device, the epitaxial wafer demand of making the substrate growth of the heavily-doped silicon sheet is increasing.But use the Grown by CZ Method heavily-doped silicon, exist many problems different with gently mixing silicon single crystal.Particularly mix, it is the gordian technique of heavily-doped silicon growth.
The element doping method is generally all adopted in the doping of heavily-doped silicon growth.Because silicon single-crystal develops towards the major diameter direction always, single stove charging capacity is increasing, and this makes doping also increasing, restrains tens grams even a few hectogram has from several.Reasons such as and adulterant four kinds of impurity (phosphorus, arsenic, antimony and boron) can be when filling with substance be directly packed into except boron, and its excess-three kind element is low because of fusing point, volatility is big can not directly be packed at when filling with substance, must could drop into behind the unmelted polycrystalline silicon such as grade.Traditional method is design one spoon that mixes on single crystal growing furnace, wait unmelted polycrystalline silicon after, spoonful pour into mixing.The shortcoming of this method is that the doping agent that is pre-installed on the spoon that mixes is influenced by the interior pyritous of burner hearth, and very easy evaporation adds that the spoon that mixes has certain height from fusion silicon liquid level, very easily forms blast when doping agent is poured into.Such evaporation and blast not only make the incorporation of doping agent restive, and have polluted furnace inner environment, directly influence single crystal growing.Moreover design one doping spoon has increased the gas leakage point on the single crystal growing furnace, and the monocrystalline quality is caused adverse influence.Particularly, when doping reached a few hectogram, this adulterating method almost can not be used.
Day disclosure special permission JP59, " Grown by CZ Method silicon crystal mix antimony method " reported in 156,993 (84,156,993), this method adopts a kind of device that antimony is melted and makes it slowly to grow with melt-mixing heavily-doped silicon.
Another one day disclosure special permission JP62, " vertical pulling method prepares the doped silicon crystal " reported in 153,188 (87,153,188).The method that this patent adopts is to adhere to the doping piece on seed crystal, then seed crystal is immersed in the melt, and the doping piece is realized thereupon fusing into melt mixing.For reblended antimony, be exactly with antimony regulus attached on the silicon seed, carry out crystal growth after immersing melt.Adopt this method to avoid common required problem of in crystal growth, adding antimony, and can obtain the silicon single-crystal of uniform doping.MOTOROLA company (Motorola Semiconductor Products Sector, Phoenix, Arizona).Adopt gas phase doping method grow heavily doped phosphorus, arsenic silicon single-crystal.This method has been utilized this two kinds of characteristics that the material vapour pressure is high, they is contained in quartz curette and with quartz bell cover cover, and the space is left in the centre, makes their distillations above placing melt before the crystal growth, and gasiform phosphorus or arsenic can little by little dissolve in the silicon melt.
According to the characteristics of phosphorus, arsenic, these materials of antimony, can think that above-mentioned two Japanese Patents are inappropriate for heavily doped phosphorus, arsenic, because these two kinds of materials do not exist fusing one to say, directly distillation under higher temperature.And the gas phase doping method obviously is impossible to reblended antimony, because antimony can not distil.
The heavy doping method that the purpose of this invention is to provide a kind of czochralski silicon monocrystal growth.
The present invention takes following measures in order to achieve the above object:
The step of the heavy doping method of czochralski silicon monocrystal growth is as follows:
1) make " umbrella shape " doping device with HIGH-PURITY SILICON, " umbrella handle " is seed crystal;
2) " umbrella shape " doping device is clipped on the seed chuck;
3) doping agent is poured in the doping device;
4) treat unmelted polycrystalline silicon after, the decline seed crystal immerses the doping device and is melted in the melt.
The present invention enters in the molten silicon lentamente by the doping device, has avoided doping agent shock heating and the blast that causes can be controlled better incorporation, guarantees that simultaneously the monocrystalline burner hearth is clean, helps single crystal growing.Facts have proved, carry out the growth of heavily doped phosphorus, heavily doped arsenic and heavy Sb-admixed silicon monocrystal, remarkable economic efficiency is arranged.
Below in conjunction with drawings and Examples the present invention is elaborated.
Accompanying drawing is " umbrella shape " doping device structural representation.
The step of the heavy doping method of czochralski silicon monocrystal growth is as follows:
1) make " umbrella shape " doping device with HIGH-PURITY SILICON, " umbrella handle " is seed crystal 1;
2) " umbrella shape " doping device is clipped on the seed chuck;
3) doping agent is poured in the doping device 2;
4) treat unmelted polycrystalline silicon after, the decline seed crystal immerses in the silicon melt doping device.(suitably reduce melt temperature during immersion, increase furnace pressure) to more than the 40torr
Embodiment 1
On CG3000 type single crystal growing furnace, with 10 inches thermal fields, 10 kilograms of polysilicons feed intake as follows with this method heavy doping: 1) make " umbrella shape " doping device with HIGH-PURITY SILICON, " umbrella handle " is seed crystal; 2) 100 millimeters " umbrella shape " doping of diameter device is clipped on the seed chuck; 3) phosphorus 40 grams are poured in the doping device; 4) treat unmelted polycrystalline silicon after, the decline seed crystal immerses in the silicon melt doping device.Heavily doped phosphorus silicon single-crystal 3 ", 4 " resistivity 0.001---0.0007 Ω .cm
Target resistivity deviation＜5%
Embodiment 2
On CG3000 type single crystal growing furnace, with 10 inches thermal fields, 10 kilograms of polysilicons feed intake as follows with this method heavy doping: 1) make " umbrella shape " doping device with HIGH-PURITY SILICON, " umbrella handle " is seed crystal; 2) with 100 millimeters "
iUmbrella shape " the doping device is clipped on the seed chuck; 3) 30 gram arsenic are poured in the doping device; 4) treat unmelted polycrystalline silicon after, the decline seed crystal immerses in the silicon melt doping device.Heavily doped as silicon crystal 3 ", 4 " resistivity 0.004---0.002 Ω .cm
Target resistivity deviation＜10%
Embodiment 3
On CG3000 type single crystal growing furnace, with 10 inches thermal fields, 10 kilograms of polysilicons feed intake as follows with this method heavy doping: 1) make " umbrella shape " doping device with HIGH-PURITY SILICON, " umbrella handle " is seed crystal; 2) 100 millimeters " umbrella shape " doping devices are clipped on the seed chuck; 3) 59 gram antimony are poured in the doping device; 4) treat unmelted polycrystalline silicon after, the decline seed crystal immerses in the silicon melt doping device.Heavy Sb-admixed silicon monocrystal 3 ", 4 " resistivity＜0.02 Ω .cm
Target resistivity deviation＜5%
Claims (2)
1. the heavy doping method of czochralski silicon monocrystal growth is characterized in that its step is as follows:
1) make " umbrella shape " doping device with HIGH-PURITY SILICON, " umbrella handle " is seed crystal [1];
2) " umbrella shape " doping device is clipped on the seed chuck;
3) doping agent is poured in the doping device [2];
4) treat unmelted polycrystalline silicon after, the decline seed crystal immerses in the silicon melt doping device.
2. the heavy doping method of a kind of czochralski silicon monocrystal growth according to claim 1 is characterized in that said doping agent is: phosphorus, arsenic and antimony.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00122075 CN1109778C (en) | 2000-08-16 | 2000-08-16 | Re-doping method for vertically pulled monocrystalline silicon |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 00122075 CN1109778C (en) | 2000-08-16 | 2000-08-16 | Re-doping method for vertically pulled monocrystalline silicon |
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| CN1337476A CN1337476A (en) | 2002-02-27 |
| CN1109778C true CN1109778C (en) | 2003-05-28 |
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| CN 00122075 Expired - Fee Related CN1109778C (en) | 2000-08-16 | 2000-08-16 | Re-doping method for vertically pulled monocrystalline silicon |
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Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NO326797B1 (en) * | 2005-06-10 | 2009-02-16 | Elkem As | Process and apparatus for refining molten material |
| WO2010078205A1 (en) | 2008-12-30 | 2010-07-08 | Memc Electronic Materials, Inc. | Methods and pulling assemblies for pulling a multicrystalline silicon ingot from a silicon melt |
| CN101717993B (en) * | 2009-11-10 | 2011-01-12 | 天津市环欧半导体材料技术有限公司 | Doping method and doping device of pulling reincorporation antimony crystals |
| CN101787566B (en) * | 2010-03-25 | 2012-04-25 | 杭州海纳半导体有限公司 | Gallium doping method of Czochralski silicon monocrystalline and doping device thereof |
| CN103361732A (en) * | 2013-07-16 | 2013-10-23 | 江西旭阳雷迪高科技股份有限公司 | Preparation process of N-type heavily-doped phosphorus master alloy silicon rod |
| CN105200513A (en) * | 2015-10-19 | 2015-12-30 | 天津市环欧半导体材料技术有限公司 | Novel Czochralski silicon single crystal doping method with resistivity control function |
| CN105887187B (en) * | 2015-11-24 | 2020-02-14 | 上海超硅半导体有限公司 | Method for stably controlling concentration of dopant for silicon single crystal growth |
| CN108796603B (en) * | 2018-08-29 | 2024-04-19 | 内蒙古中环晶体材料有限公司 | Process method for Czochralski single crystal complementary doping alloy |
| CN109487333A (en) * | 2018-12-25 | 2019-03-19 | 徐州鑫晶半导体科技有限公司 | Seed crystal, vertical pulling method prepare the method and monocrystalline silicon of monocrystalline silicon |
| CN109457294A (en) * | 2018-12-27 | 2019-03-12 | 衢州晶哲电子材料有限公司 | A kind of vertical pulling heavy Sb-admixed silicon monocrystal antimony source purifying plant and purification doping method |
| CN112160020B (en) * | 2020-09-29 | 2022-10-18 | 晶科能源股份有限公司 | Dopant feeder, preparation system and method for doped semiconductor material |
| CN113481592B (en) * | 2021-07-07 | 2022-08-30 | 西安奕斯伟硅片技术有限公司 | Method for drawing silicon single crystal rod |
| CN113463182B (en) * | 2021-07-07 | 2022-08-23 | 西安奕斯伟硅片技术有限公司 | Method for drawing silicon single crystal rod |
| CN113584574B (en) * | 2021-08-02 | 2022-12-02 | 宁夏中欣晶圆半导体科技有限公司 | Solid phase doping method and device, and heavily arsenic-doped silicon single crystal production system and production method |
| CN114351243B (en) * | 2021-12-07 | 2023-11-07 | 山东有研半导体材料有限公司 | Preparation method of N-type doped silicon single crystal and prepared doped silicon single crystal |
| CN114808112A (en) * | 2022-03-31 | 2022-07-29 | 上海新昇半导体科技有限公司 | Single crystal growth method and wafer |
| CN115058767B (en) * | 2022-05-30 | 2024-04-23 | 宁夏中晶半导体材料有限公司 | Doping method and device for preparing heavily-doped antimony monocrystal by MCZ (micro-channel chemical vapor deposition) method |
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