CN106505457A - A kind of nanocrystalline magnetic loop device - Google Patents
A kind of nanocrystalline magnetic loop device Download PDFInfo
- Publication number
- CN106505457A CN106505457A CN201611043763.XA CN201611043763A CN106505457A CN 106505457 A CN106505457 A CN 106505457A CN 201611043763 A CN201611043763 A CN 201611043763A CN 106505457 A CN106505457 A CN 106505457A
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- CN
- China
- Prior art keywords
- nanocrystalline
- nanocrystalline core
- containment vessel
- magnetic loop
- loop device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B13/00—Arrangement of switchgear in which switches are enclosed in, or structurally associated with, a casing, e.g. cubicle
- H02B13/02—Arrangement of switchgear in which switches are enclosed in, or structurally associated with, a casing, e.g. cubicle with metal casing
- H02B13/035—Gas-insulated switchgear
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0205—Magnetic circuits with PM in general
- H01F7/021—Construction of PM
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Soft Magnetic Materials (AREA)
- Details Of Aerials (AREA)
Abstract
The invention discloses a kind of nanocrystalline magnetic loop device, is fixed on gas insulating enclosed switch equipment, including：Nanocrystalline core string, containment vessel, radome and insulating part；The Nanocrystalline core string is arranged with the gas insulating enclosed switch equipment；The Nanocrystalline core string includes some Nanocrystalline cores；Axial close-packed arrays of each Nanocrystalline core along gas insulating enclosed switch equipment；It is connected by the first tack coat between two adjacent Nanocrystalline cores；The containment vessel is set in the outside of the Nanocrystalline core string；The internal diameter of the containment vessel is equal with the external diameter of the Nanocrystalline core；The radome is connected by the second tack coat with the containment vessel；The two ends of the magnet ring string are provided with the insulating part；The insulating part is connected by first tack coat with the adjacent Nanocrystalline core.Present configuration is simple, low cost, without the need for manually operated, reliability height, can effectively suppress the amplitude and steepness of VFTO.
Description
Technical field
The present invention relates to overvoltage protection technical field, more particularly to a kind of nanocrystalline magnetic loop device.
Background technology
Gas insulated transformer substation (Gas Insulated Switchgear, abbreviation GIS) has that floor space is little, reliability
High, security is good, installation period is short, easy to maintenance the advantages of, therefore GIS is the important component part of Chinese electrical network at different levels.
Very fast transient overvoltage caused by disconnecting switch operation (Very Fast Transient Overvoltage,
Abbreviation VFTO) be GIS failures one of the main reasons.During isolator operation, multiple electricity between its fracture, can be produced
Arc is restriked or prebreakdown, and arc reignition each time can all produce the transient overvoltage of certain amplitude, transient overvoltage will along every
Leave shut-off mouth to transmit to both sides, through repeatedly rolling over, reflecting to form the higher VFTO of amplitude, research shows that its amplitude is reached as high as
Arrive 3.0p.u. or so.
The mode of VFTO is suppressed to have at present：Switching-on resistance, arrester and simplified wiring etc..Add in the appropriate location of GIS
During dress arrester, position of the arrester to the inhibition of very fast transient overvoltage with arrester with disconnecting switch operating point has
Close；And switching-on resistance is accessed inside switchgear, the complexity and manufacturing cost of construction of switch can be increased, and need to arrange hand
Pneumatic operating mechanism, additionally, the access of switching-on resistance directly changes circuit parameter, affects the direction of energy, may increase GIS failures
Rate.Thus traditional switching-on resistance and arrester are to suppressing VFTO effects extremely limited.
Content of the invention
The goal of the invention of the present invention is to provide a kind of nanocrystalline magnetic loop device, to solve to deposit in existing suppression VFTO technology
Complex structure, the problem that reliability is low and inhibition is undesirable.
A kind of embodiments in accordance with the present invention, there is provided nanocrystalline magnetic loop device, including：Nanocrystalline core string, containment vessel,
Radome and insulating part；
The Nanocrystalline core string is arranged with the gas insulating enclosed switch equipment；
The Nanocrystalline core string includes some Nanocrystalline cores；
Axial close-packed arrays of each Nanocrystalline core along the gas insulating enclosed switch equipment；
It is connected by the first tack coat between two adjacent Nanocrystalline cores；
The containment vessel is set in the outside of the Nanocrystalline core string；
The internal diameter of the containment vessel is equal with the external diameter of the Nanocrystalline core；
The radome is connected by the second tack coat with the containment vessel；
The two ends of the magnet ring string are provided with the insulating part；
The insulating part is connected by first tack coat with the adjacent Nanocrystalline core；
The external diameter of the Nanocrystalline core is 750mm～770mm；
The internal diameter of the Nanocrystalline core is 690mm～710mm.
Preferably, the Nanocrystalline core is the cylindrical structural body being made up of iron based nano crystal material.
Preferably, the thickness of the Nanocrystalline core is 20mm～40mm.
Preferably, the radome is the cylindrical tube being made of stainless steel.
Preferably, the containment vessel is the cylindrical tube being made up of aluminium alloy.
Preferably, the material of the insulating part is epoxy resin.
Preferably, first tack coat is non-molten type epobond epoxyn adhesive linkage.
Preferably, the second tack coat silicone grease double faced adhesive tape adhesive linkage.
A kind of nanocrystalline magnetic loop device provided from above technical scheme, the present invention, is fixed on gas-insulated closing
On switchgear, including：Nanocrystalline core string, containment vessel, radome and insulating part；On the gas insulating enclosed switch equipment
It is arranged with the Nanocrystalline core string, thus it is possible to vary the wave impedance of place line segment, increases inductance and vortex；The containment vessel is arranged
In the outside of the Nanocrystalline core string, the internal Nanocrystalline core can be protected, improve the strength and stiffness of described device；
The radome is connected with the containment vessel by the second tack coat, can improve the Electric Field Distribution of described device outer surface,
Avoid local field strength too high and accident occurs；The two ends of the nanometer magnet ring string are provided with the insulating part, can suppress described and receive
The Nanocrystalline core creeping discharge at rice magnet ring string two ends.When produce VFTO when, due to VFTO traveling waves equivalent frequency megahertz
More than, circuit accesses described device and is equivalent to access a nonlinear inductance, and equivalent inductance is bigger, and it is steep that VFTO traveling waves reduce
Degree is more；Additionally, the Nanocrystalline core is due to high frequency characteristics, eddy-current loss, the part of VFTO traveling waves can be produced in high frequency
Energy is absorbed and is changed into heat by the Nanocrystalline core and sheds, and therefore VFTO traveling wave amplitudes also reduce.Present configuration letter
Single, low cost, without the need for manually operated, reliability height, can effectively suppress the amplitude and steepness of VFTO.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to institute in embodiment
The accompanying drawing for using is needed to be briefly described, it should be apparent that, drawings in the following description are only some enforcements of the present invention
Example, for those of ordinary skill in the art, on the premise of not paying creative work, can be being obtained according to these accompanying drawings
Obtain other accompanying drawings.
Fig. 1 is the structural representation according to an a kind of nanocrystalline magnetic loop device for being preferable to carry out exemplifying.
Wherein, 1- Nanocrystalline cores string, 2- containment vessels, 3- radomes, 4- insulators, the first tack coats of 5-, 6- second glue
Knot layer, 7- gas insulating enclosed switch equipments, 11- Nanocrystalline cores.
Specific embodiment
Accompanying drawing in below in conjunction with the embodiment of the present invention, to the embodiment of the present invention in technical scheme carry out clear, complete
Whole description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiment.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
As shown in figure 1, an a kind of preferred embodiment of the nanocrystalline magnetic loop device provided for the present invention, the nanocrystalline magnetic
Loop device is fixed on gas insulating enclosed switch equipment 7, including：Nanocrystalline core string 1, containment vessel 2, radome 3 and insulation
Part 4；
The Nanocrystalline core string 1 is arranged with the gas insulating enclosed switch equipment 7, thus it is possible to vary place line segment
Wave impedance, increases inductance and vortex；
The Nanocrystalline core string 1 includes some Nanocrystalline cores 11, and the quantity of the Nanocrystalline core 11 can be according to reality
The needs of border application are chosen.
Axial close-packed arrays of each Nanocrystalline core 11 along the gas insulating enclosed switch equipment 7；
It is connected by the first tack coat 5 between two adjacent Nanocrystalline cores 1；
The containment vessel 2 is set in the outside of the Nanocrystalline core string 1；
The internal diameter of the containment vessel 2 is equal with the external diameter of the Nanocrystalline core 11, with ensure the containment vessel 2 with described
It is closely connection between Nanocrystalline core 11.
The radome 3 is connected by the second tack coat 6 with the containment vessel 2；
The two ends of the magnet ring string 1 are provided with the insulating part 4；
The insulating part 4 is connected by first tack coat 5 with the adjacent Nanocrystalline core 1；
The external diameter of the Nanocrystalline core 11 is 750mm～770mm；
The internal diameter of the Nanocrystalline core 11 is 690mm～710mm.
VFTO, is also called isolator operation overvoltage, and which is defined as wink of the wave front time in 3～100 nano-seconds
State overvoltage.The basic reason that VFTO is produced is that the voltage difference at isolation switch contact two ends causes contact gap to puncture, and is puncturing
Moment can produce the extremely steep surge voltage of rising edge, and in GIS internal communications.Structure and parameter due to each part in GIS loops
Difference, this shock wave are ultimately formed and apparatus insulated safety may be threatened through constantly folding, reflection and addition of waveforms
Transient impact voltage.
From unlike other overvoltage because the movement velocity of switch contact is slower, in an isolator operation, can
The VFTO waveforms of generation are up to as many as tens of or even up to a hundred times.The size of VFTO can become with the situation that contact gap punctures
Change, and the maximum VFTO of theory, occurred in disconnecting switch both sides voltage all in peak value and occur during opposite polarity punctures.
In the present embodiment, when 7 normal work of gas insulating enclosed switch equipment, the gas-insulated closing is opened
In pass equipment 7 frequency of voltage and current be power frequency 50Hz, due to frequency very low, the induction reactance that the Nanocrystalline core 11 shows
It is negligible with the impact to system.For Nanocrystalline core of the present invention 11, under power frequency 50Hz, its magnetic property
Maximum magnetic induction Bm is met more than or equal to 1.0T, remanence ratio Br/Bm is more than or equal to 0.40.
When produce VFTO when, due to VFTO traveling waves equivalent frequency megahertz more than, circuit access described device with regard to phase
When in accessing a nonlinear inductance, and equivalent inductance is bigger, and the steepness that VFTO traveling waves reduce is more；Additionally, the nanocrystalline magnetic
Ring 11 can produce eddy-current loss in high frequency due to high frequency characteristics, and the portion of energy of VFTO traveling waves is by the Nanocrystalline core 11
Absorb and change into heat to shed, VFTO traveling waves amplitude also thus is attenuated, make VFTO maximum amplitudes be limited in 1.4p.u. with
Under, the higher-order of oscillation is substantially suppressed.
Preferably, the Nanocrystalline core 11 is the cylindrical structural body being made up of iron based nano crystal material.Iron-based nanometer
Brilliant material has excellent comprehensive magnetic energy：Low, the remarkable temperature of high saturated magnetic induction, high initial magnetoconductivity, high-frequency loss
Degree stability and flexible frequency characteristic etc., are a kind of preferably cheap high-performance soft magnetic materials, and there is preferable corrosion resistance
And magnetic stability, the reliability for suppressing VFTO can be strengthened, and significantly improve the inhibition of VFTO.
Preferably, the thickness of the Nanocrystalline core 11 is 20mm～40mm, can both improve the Nanocrystalline core 11 and press down
The effect of VFTO processed, while can also reduces cost.
Preferably, the radome 3 is the cylindrical tube being made of stainless steel.Radome 3 can improve the nanometer
The Electric Field Distribution of brilliant magnetic ring device outer surface, it is to avoid local field strength too high and produce shelf depreciation；Using stainless steel material, can be with
Improve the nanocrystalline magnetic loop device environmental corrosion resisting ability and not easy to wear, high life.
Preferably, the containment vessel 2 is the cylindrical tube being made up of aluminium alloy.Aluminum alloy materials have from heavy and light, by force
The advantages of spending height, low cost, be unlikely to deform good with airtight performance, the containment vessel 2 are sheathed on the outer of the Nanocrystalline core string 1
Portion, can protect the internal Nanocrystalline core 11, it is to avoid the Nanocrystalline core 11 is damaged, and improve the nanometer
The overall mechanical strength of brilliant magnetic ring device and rigidity, improve the reliability that the nanocrystalline magnetic loop device suppresses VFTO.
Preferably, the material of the insulating part 4 is epoxy resin.Epoxy resin has good stability and excellent electricity
Insulating properties, can avoid 11 surface of the Nanocrystalline core under VFTO effects from producing by the insulating part 4 of poured with epoxy resin
Creeping discharge and weaken the situation for suppressing VFTO effects, be conducive to strengthening the effect that the nanocrystalline magnetic loop device suppresses VFTO.
Preferably, first tack coat 5 is non-molten type epobond epoxyn tack coat.Non- molten type epoxy resin bonding
Agent has good electrical insulating property, and adhesion strength is high, and pliability is strong, can bear the impact and vibration of high intensity.Described first
Tack coat 5 can be such that adjacent two Nanocrystalline core 11 closely couples together, and form the Nanocrystalline core string 1, and
And the insulating part 4 and 11 tight connection of the Nanocrystalline core is made, be conducive to strengthening the nanocrystalline magnetic loop device suppression
The effect of VFTO.
Preferably, second tack coat 6 is the two-sided glue bonding layer of silicone grease.Silicone grease double faced adhesive tape has high-termal conductivity and good
Electrical insulating property, and there is docile property and strong viscosity.Second tack coat 6 can be by the radome 3 and the containment vessel 2
Bonding is integral.The portion of energy of VFTO traveling waves is absorbed and is changed into heat by the Nanocrystalline core 11 and sheds, due to described
Second tack coat 6 has high-termal conductivity, thus can quickly conduct heat.
A kind of nanocrystalline magnetic loop device provided from above technical scheme, the present invention, is fixed on gas-insulated closing
On switchgear 7, including：Nanocrystalline core string 1, containment vessel 2, radome 3 and insulating part 4；The gas-insulated enclosed switch 7
The Nanocrystalline core string 1 is arranged with equipment, thus it is possible to vary the wave impedance of place line segment, increase inductance and vortex；The guarantor
Protective case set 2 is located at the outside of the Nanocrystalline core string 1, can protect the internal Nanocrystalline core 11, improves described device
Strength and stiffness；The radome 3 is connected with the containment vessel 2 by the second tack coat 6, can be improved outside described device
The Electric Field Distribution on surface, it is to avoid local field strength is too high and accident occurs；The two ends of the nanometer magnet ring string 1 are provided with the insulating part
4,11 creeping discharge of Nanocrystalline core at 1 two ends of nanometer magnet ring string can be suppressed.When VFTO is produced, due to VFTO traveling waves
Equivalent frequency megahertz more than, circuit accesses described device and is equivalent to access a nonlinear inductance, and equivalent inductance is got over
Greatly, the steepness that VFTO traveling waves reduce is more；Additionally, the Nanocrystalline core 11 is due to high frequency characteristics, whirlpool can be produced in high frequency
Stream loss, the portion of energy of VFTO traveling waves are absorbed and are changed into heat by the Nanocrystalline core 11 and shed, VFTO traveling wave amplitudes
Also therefore reduce.Present configuration is simple, low cost, without the need for manually operated, reliability height, can effectively suppress the amplitude of VFTO
And steepness.
Those skilled in the art will readily occur to its of the present invention after considering specification and putting into practice invention disclosed herein
Its embodiment.The application is intended to any modification of the present invention, purposes or adaptations, these modifications, purposes or
Person's adaptations follow the general principle of the present invention and including the undocumented common knowledge in the art of the present invention
Or conventional techniques.Description and embodiments are considered only as exemplary, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be appreciated that the precision architecture for being described above and being shown in the drawings is the invention is not limited in, and
And various modifications and changes can carried out without departing from the scope.The scope of the present invention is only limited by appended claim.
Claims (8)
1. a kind of nanocrystalline magnetic loop device, is fixed on gas insulating enclosed switch equipment (7), it is characterised in that include：Nanometer
Brilliant magnet ring string (1), containment vessel (2), radome (3) and insulating part (4)；
Nanocrystalline core string (1) is arranged with gas insulating enclosed switch equipment (7)；
Described Nanocrystalline core string (1) includes some Nanocrystalline cores (11)；
The axial close-packed arrays of each Nanocrystalline core (11) along the gas insulating enclosed switch equipment (7)；
It is connected by the first tack coat (5) between two adjacent Nanocrystalline core (1)；
Containment vessel (2) are set in the outside of Nanocrystalline core string (1)；
The internal diameter of containment vessel (2) is equal with the external diameter of the Nanocrystalline core (11)；
Radome (3) are connected by the second tack coat (6) with the containment vessel (2)；
The two ends of magnet ring string (1) are provided with the insulating part (4)；
Insulating part (4) are connected by the first tack coat (5) with the adjacent Nanocrystalline core (1)；
The external diameter of Nanocrystalline core (11) is 750mm～770mm；
The internal diameter of Nanocrystalline core (11) is 690mm～710mm.
2. nanocrystalline magnetic loop device according to claim 1, it is characterised in that Nanocrystalline core (11) are by iron-based
The cylindrical structural body that nanocrystalline material is made.
3. nanocrystalline magnetic loop device according to claim 2, it is characterised in that the thickness of Nanocrystalline core (11) is
20mm～40mm.
4. nanocrystalline magnetic loop device according to claim 1, it is characterised in that radome (3) are by stainless steel
Into cylindrical tube.
5. nanocrystalline magnetic loop device according to claim 1, it is characterised in that containment vessel (2) are by aluminium alloy system
Into cylindrical tube.
6. nanocrystalline magnetic loop device according to claim 1, it is characterised in that the material of insulating part (4) is epoxy
Resin.
7. nanocrystalline magnetic loop device according to claim 1 or 5, it is characterised in that described first tack coat (5) are non-molten
Type epobond epoxyn tack coat.
8. the nanocrystalline magnetic loop device according to claim 4 or 6, it is characterised in that described second tack coat (6) are silicone grease
Two-sided glue bonding layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611043763.XA CN106505457B (en) | 2016-11-21 | 2016-11-21 | A kind of nanocrystalline magnetic loop device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611043763.XA CN106505457B (en) | 2016-11-21 | 2016-11-21 | A kind of nanocrystalline magnetic loop device |
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| Publication Number | Publication Date |
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| CN106505457A true CN106505457A (en) | 2017-03-15 |
| CN106505457B CN106505457B (en) | 2019-07-05 |
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| CN201611043763.XA Active CN106505457B (en) | 2016-11-21 | 2016-11-21 | A kind of nanocrystalline magnetic loop device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106992510A (en) * | 2017-05-25 | 2017-07-28 | 云南电网有限责任公司电力科学研究院 | Suppress the magnetic ring device of very fast transient overvoltage in gas-insulated switchgear |
| CN107068457A (en) * | 2017-05-12 | 2017-08-18 | 平高集团有限公司 | It is a kind of to carry the switch that VFTO suppresses function |
| CN109888740A (en) * | 2019-01-23 | 2019-06-14 | 平高集团有限公司 | A kind of VFTO inhibits device and GIS device |
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| JPH0382305A (en) * | 1989-08-24 | 1991-04-08 | Toshiba Corp | Gas-insulated switchgear |
| CN102749559A (en) * | 2012-07-09 | 2012-10-24 | 云南电力试验研究院（集团）有限公司电力研究院 | VFTO (Very Fast Transient Overvoltage) online measurement and alarm system for electric power |
| CN103236684A (en) * | 2013-04-17 | 2013-08-07 | 清华大学 | High-frequency magnet ring device for restraining very fast transient overvoltage |
| CN205264589U (en) * | 2015-12-08 | 2016-05-25 | 新东北电气集团超高压有限公司 | Restrain device that isolator operation produced VFTO |
| CN206195229U (en) * | 2016-11-21 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Nanocrystalline magnetic ring device |
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| JPH0382305A (en) * | 1989-08-24 | 1991-04-08 | Toshiba Corp | Gas-insulated switchgear |
| CN102749559A (en) * | 2012-07-09 | 2012-10-24 | 云南电力试验研究院（集团）有限公司电力研究院 | VFTO (Very Fast Transient Overvoltage) online measurement and alarm system for electric power |
| CN103236684A (en) * | 2013-04-17 | 2013-08-07 | 清华大学 | High-frequency magnet ring device for restraining very fast transient overvoltage |
| CN205264589U (en) * | 2015-12-08 | 2016-05-25 | 新东北电气集团超高压有限公司 | Restrain device that isolator operation produced VFTO |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068457A (en) * | 2017-05-12 | 2017-08-18 | 平高集团有限公司 | It is a kind of to carry the switch that VFTO suppresses function |
| CN107068457B (en) * | 2017-05-12 | 2019-08-13 | 平高集团有限公司 | A kind of included VFTO inhibits the switch of function |
| CN106992510A (en) * | 2017-05-25 | 2017-07-28 | 云南电网有限责任公司电力科学研究院 | Suppress the magnetic ring device of very fast transient overvoltage in gas-insulated switchgear |
| CN106992510B (en) * | 2017-05-25 | 2019-10-15 | 云南电网有限责任公司电力科学研究院 | Inhibit the magnetic ring device of very fast transient overvoltage in gas-insulated switchgear |
| CN109888740A (en) * | 2019-01-23 | 2019-06-14 | 平高集团有限公司 | A kind of VFTO inhibits device and GIS device |
| CN109888740B (en) * | 2019-01-23 | 2021-04-30 | 平高集团有限公司 | VFTO restraining device and GIS equipment |
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| Publication number | Publication date |
|---|---|
| CN106505457B (en) | 2019-07-05 |
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