CN106505457B - A kind of nanocrystalline magnetic loop device - Google Patents
A kind of nanocrystalline magnetic loop device Download PDFInfo
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- CN106505457B CN106505457B CN201611043763.XA CN201611043763A CN106505457B CN 106505457 B CN106505457 B CN 106505457B CN 201611043763 A CN201611043763 A CN 201611043763A CN 106505457 B CN106505457 B CN 106505457B
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- Prior art keywords
- nanocrystalline
- nanocrystalline core
- adhesive layer
- protective shell
- string
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02B—BOARDS, SUBSTATIONS OR SWITCHING ARRANGEMENTS FOR THE SUPPLY OR DISTRIBUTION OF ELECTRIC POWER
- H02B13/00—Arrangement of switchgear in which switches are enclosed in, or structurally associated with, a casing, e.g. cubicle
- H02B13/02—Arrangement of switchgear in which switches are enclosed in, or structurally associated with, a casing, e.g. cubicle with metal casing
- H02B13/035—Gas-insulated switchgear
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F7/00—Magnets
- H01F7/02—Permanent magnets [PM]
- H01F7/0205—Magnetic circuits with PM in general
- H01F7/021—Construction of PM
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Soft Magnetic Materials (AREA)
- Details Of Aerials (AREA)
Abstract
The invention discloses a kind of nanocrystalline magnetic loop devices, are fixed on gas insulating enclosed switch equipment, comprising: Nanocrystalline core string, protective shell, shielding case and insulating part；The Nanocrystalline core string is arranged on the gas insulating enclosed switch equipment；The Nanocrystalline core string includes several Nanocrystalline cores；Axial close-packed arrays of each Nanocrystalline core along gas insulating enclosed switch equipment；It is connected between two adjacent Nanocrystalline cores by the first adhesive layer；The protective shell is set in the outside of the Nanocrystalline core string；The internal diameter of the protective shell is equal with the outer diameter of the Nanocrystalline core；The shielding case is connected with the protective shell by the second adhesive layer；The both ends of the magnet ring string are equipped with the insulating part；The insulating part is connected with the adjacent Nanocrystalline core by first adhesive layer.The configuration of the present invention is simple, at low cost, without manual operation, high reliablity can effectively inhibit the amplitude and steepness of VFTO.
Description
Technical field
The present invention relates to overvoltage protection technical field, in particular to a kind of nanocrystalline magnetic loop device.
Background technique
Gas insulated transformer substation (Gas Insulated Switchgear, abbreviation GIS) small, reliability with occupied area
High, the advantages that safety is good, installation period is short, easy to maintain, therefore GIS is the important component of China's power grids at different levels.
Very fast transient overvoltage caused by disconnecting switch operation (Very Fast Transient Overvoltage,
One of abbreviation VFTO) the main reason for being GIS failure.During isolator operation, multiple electricity can be generated between fracture
Arc is restriked or prebreakdown, and arc reignition each time can all generate the transient overvoltage of certain amplitude, transient overvoltage will along every
It leaves shutdown mouth to transmit to two sides, by repeatedly rolling over, reflecting to form the higher VFTO of amplitude, research shows that its amplitude reaches as high as
Arrive 3.0p.u. or so.
The mode of VFTO is inhibited to have at present: switching-on resistance, arrester and simplified wiring etc..Add in the appropriate location of GIS
When filling arrester, arrester has the inhibitory effect of very fast transient overvoltage and the position of arrester and disconnecting switch operating point
It closes；And switching-on resistance is accessed inside switchgear, it will increase the complexity and manufacturing cost of construction of switch, and need that hand is arranged
Pneumatic operating mechanism influences the direction of energy in addition, the access of switching-on resistance is directly changed circuit parameter, may will increase GIS failure
Rate.Thus traditional switching-on resistance and arrester are extremely limited to inhibition VFTO effect.
Summary of the invention
Goal of the invention of the invention is to provide a kind of nanocrystalline magnetic loop device, to solve to deposit in existing inhibition VFTO technology
In the problem that structure is complicated, reliability is low and inhibitory effect is undesirable.
According to an embodiment of the invention, providing a kind of nanocrystalline magnetic loop device, comprising: Nanocrystalline core string, protective shell,
Shielding case and insulating part；
The Nanocrystalline core string is arranged on the gas insulating enclosed switch equipment；
The Nanocrystalline core string includes several Nanocrystalline cores；
Axial close-packed arrays of each Nanocrystalline core along the gas insulating enclosed switch equipment；
It is connected between two adjacent Nanocrystalline cores by the first adhesive layer；
The protective shell is set in the outside of the Nanocrystalline core string；
The internal diameter of the protective shell is equal with the outer diameter of the Nanocrystalline core；
The shielding case is connected with the protective shell by the second adhesive layer；
The both ends of the magnet ring string are equipped with the insulating part；
The insulating part is connected with the adjacent Nanocrystalline core by first adhesive layer；
The outer diameter of the Nanocrystalline core is 750mm~770mm；
The internal diameter of the Nanocrystalline core is 690mm~710mm.
Preferably, the Nanocrystalline core is the cylindrical structural body made of iron based nano crystal material.
Preferably, the Nanocrystalline core with a thickness of 20mm~40mm.
Preferably, the shielding case is the cylindrical tube being made of stainless steel.
Preferably, the protective shell is the cylindrical tube made of aluminium alloy.
Preferably, the material of the insulating part is epoxy resin.
Preferably, first adhesive layer is non-molten type epobond epoxyn adhesive layer.
Preferably, the second adhesive layer silicone grease double-sided adhesive adhesive layer.
From the above technical scheme, a kind of nanocrystalline magnetic loop device provided by the invention is fixed on gas-insulated closing
On switchgear, comprising: Nanocrystalline core string, protective shell, shielding case and insulating part；On the gas insulating enclosed switch equipment
It is arranged with the Nanocrystalline core string, thus it is possible to vary the wave impedance of place line segment increases inductance and vortex；The protective shell is arranged
In the outside of the Nanocrystalline core string, the internal Nanocrystalline core can be protected, the strength and stiffness of described device are improved；
The shielding case is connected by the second adhesive layer with the protective shell, and the field distribution of described device outer surface can be improved,
It avoids local field strength excessively high and accident occurs；The both ends of the nanometer magnet ring string are equipped with the insulating part, can inhibit described and receive
The Nanocrystalline core creeping discharge at rice magnet ring string both ends.When generating VFTO, due to VFTO traveling wave equivalent frequency megahertz
More than, route access described device is equivalent to one nonlinear inductance of access, and equivalent inductance is bigger, and VFTO traveling wave reduces steep
It spends more；In addition, the Nanocrystalline core can generate eddy-current loss, the part of VFTO traveling wave due to high frequency characteristics in high frequency
Energy, which is absorbed by the Nanocrystalline core and is converted to heat, to shed, therefore VFTO traveling wave amplitude also reduces.Structure of the invention letter
Single, at low cost, without manual operation, high reliablity can effectively inhibit the amplitude and steepness of VFTO.
Detailed description of the invention
It in order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the invention
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the structural schematic diagram that a kind of nanocrystalline magnetic loop device exemplified is preferably implemented according to one.
Wherein, 1- Nanocrystalline core string, 2- protective shell, 3- shielding case, 4- insulator, the first adhesive layer of 5-, 6- second are viscous
Tie layer, 7- gas insulating enclosed switch equipment, 11- Nanocrystalline core.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Whole description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Figure 1, being an a kind of preferred embodiment of nanocrystalline magnetic loop device provided by the invention, the nanocrystalline magnetic
Loop device is fixed on gas insulating enclosed switch equipment 7, comprising: Nanocrystalline core string 1, protective shell 2, shielding case 3 and insulation
Part 4；
The Nanocrystalline core string 1 is arranged on the gas insulating enclosed switch equipment 7, thus it is possible to vary place line segment
Wave impedance increases inductance and vortex；
The Nanocrystalline core string 1 includes several Nanocrystalline cores 11, and the quantity of the Nanocrystalline core 11 can be according to reality
Border application choose.
Axial close-packed arrays of each Nanocrystalline core 11 along the gas insulating enclosed switch equipment 7；
It is connected between the Nanocrystalline core 1 of adjacent two by the first adhesive layer 5；
The protective shell 2 is set in the outside of the Nanocrystalline core string 1；
The internal diameter of the protective shell 2 is equal with the outer diameter of the Nanocrystalline core 11, with guarantee the protective shell 2 with it is described
It is closely to connect between Nanocrystalline core 11.
The shielding case 3 is connected with the protective shell 2 by the second adhesive layer 6；
The both ends of the magnet ring string 1 are equipped with the insulating part 4；
The insulating part 4 is connected with the adjacent Nanocrystalline core 1 by first adhesive layer 5；
The outer diameter of the Nanocrystalline core 11 is 750mm~770mm；
The internal diameter of the Nanocrystalline core 11 is 690mm~710mm.
VFTO, also known as isolator operation overvoltage are defined as wink of the wave front time in 3~100 nano-seconds
State overvoltage.The basic reason that VFTO is generated is that the voltage difference at isolation switch contact both ends causes contact gap to puncture, and is being punctured
Moment can generate the extremely steep surge voltage of rising edge, and in GIS internal communication.Due to the structure and parameter of each component in the circuit GIS
Difference, by continuous folding, reflection and addition of waveforms, ultimately forming may threaten to apparatus insulated safety this shock wave
Transient impact voltage.
It,, can in an isolator operation because the movement velocity of switch contact is slower unlike other overvoltage
The VFTO waveform of generation is up to as many as tens of or even up to a hundred times.The size of VFTO can become with the case where contact gap punctures
Change, and theoretical maximum VFTO, the breakdown occurred when appearing in disconnecting switch two sides voltage all in peak value and opposite polarity.
In the present embodiment, when the gas insulating enclosed switch equipment 7 works normally, the gas-insulated closing is opened
The frequency for closing voltage and current in equipment 7 is power frequency 50Hz, since frequency is very low, induction reactance that the Nanocrystalline core 11 is shown
It can be ignored with the influence to system.For Nanocrystalline core 11 of the present invention, at power frequency 50Hz, magnetic property
Meet maximum magnetic induction Bm and is greater than or equal to 0.40 more than or equal to 1.0T, remanence ratio Br/Bm.
When generating VFTO, due to VFTO traveling wave equivalent frequency megahertz or more, route access described device with regard to phase
When in accessing a nonlinear inductance, and equivalent inductance is bigger, and the steepness that VFTO traveling wave reduces is more；In addition, the nanocrystalline magnetic
Ring 11 can generate eddy-current loss, the portion of energy of VFTO traveling wave is by the Nanocrystalline core 11 due to high frequency characteristics in high frequency
Absorb and be converted to heat and shed, VFTO traveling wave amplitude also thus be attenuated, make VFTO maximum amplitude be limited in 1.4p.u. with
Under, the higher-order of oscillation is obviously inhibited.
Preferably, the Nanocrystalline core 11 is the cylindrical structural body made of iron based nano crystal material.Iron-based nanometer
Brilliant material has excellent comprehensive magnetic energy: high saturated magnetic induction, high initial magnetoconductivity, the temperature that high-frequency loss is low, brilliant
Stability and flexible frequency characteristic etc. are spent, is a kind of ideal cheap high-performance soft magnetic materials, and there is preferable corrosion resistance
And magnetic stability, the reliability for inhibiting VFTO can be enhanced, and significantly improve the inhibitory effect of VFTO.
Preferably, the Nanocrystalline core 11 with a thickness of 20mm~40mm, the Nanocrystalline core 11 both can be improved and pressed down
The effect of VFTO processed, while can also reduce cost.
Preferably, the shielding case 3 is the cylindrical tube being made of stainless steel.Shielding case 3 can improve the nanometer
The field distribution of brilliant magnetic ring device outer surface, avoids local field strength excessively high and generates shelf depreciation；It, can be with using stainless steel material
Improve the nanocrystalline magnetic loop device environmental corrosion resisting ability and not easy to wear, service life height.
Preferably, the protective shell 2 is the cylindrical tube made of aluminium alloy.Aluminum alloy materials have from heavy and light, by force
Degree is high, at low cost, is unlikely to deform the advantages that good with airtight performance, and the protective shell 2 is sheathed on the outer of the Nanocrystalline core string 1
Portion can protect the internal Nanocrystalline core 11, avoid the Nanocrystalline core 11 from damaging, and improve the nanometer
The mechanical strength and rigidity of brilliant magnetic ring device entirety improve the reliability that the nanocrystalline magnetic loop device inhibits VFTO.
Preferably, the material of the insulating part 4 is epoxy resin.Epoxy resin electricity with good stability and excellent
Insulating properties, 11 surface of Nanocrystalline core generates under being acted on by the insulating part 4 of poured with epoxy resin to avoid VFTO
Creeping discharge and weaken and inhibit the phenomenon that VFTO effect, be conducive to enhance the effect that the nanocrystalline magnetic loop device inhibits VFTO.
Preferably, first adhesive layer 5 is non-molten type epobond epoxyn adhesive layer.Non- molten type ring oxygen resin-bonding
Agent has good electrical insulating property, and adhesion strength is high, and flexibility is strong, can bear high-intensitive impact and vibration.Described first
Adhesive layer 5 can be such that the Nanocrystalline core 11 of adjacent two closely connects, and form the Nanocrystalline core string 1, and
And it connect the insulating part 4 closely with the Nanocrystalline core 11, being conducive to, which enhances the nanocrystalline magnetic loop device, inhibits
The effect of VFTO.
Preferably, second adhesive layer 6 is the two-sided glue bonding layer of silicone grease.Silicone grease double-sided adhesive is with high-termal conductivity and well
Electrical insulating property, and there is docile property and strong viscosity.Second adhesive layer 6 can be by the shielding case 3 and the protective shell 2
Bonding is integral.The portion of energy of VFTO traveling wave, which is absorbed by the Nanocrystalline core 11 and is converted to heat, to shed, due to described
Second adhesive layer 6 has high-termal conductivity, thus can quickly conduct heat.
From the above technical scheme, a kind of nanocrystalline magnetic loop device provided by the invention is fixed on gas-insulated closing
On switchgear 7, comprising: Nanocrystalline core string 1, protective shell 2, shielding case 3 and insulating part 4；The gas-insulated enclosed switch 7
The Nanocrystalline core string 1 is arranged in equipment, thus it is possible to vary the wave impedance of place line segment increases inductance and vortex；The guarantor
Protective case set 2 is located at the outside of the Nanocrystalline core string 1, can protect the internal Nanocrystalline core 11, improve described device
Strength and stiffness；The shielding case 3 is connected by the second adhesive layer 6 with the protective shell 2, can be improved outside described device
The field distribution on surface avoids local field strength excessively high and accident occurs；The both ends of the nanometer magnet ring string 1 are equipped with the insulating part
4,11 creeping discharge of Nanocrystalline core at 1 both ends of nanometer magnet ring string can be inhibited.When generating VFTO, due to VFTO traveling wave
Equivalent frequency megahertz or more, route access described device is equivalent to one nonlinear inductance of access, and equivalent inductance is got over
Greatly, the steepness that VFTO traveling wave reduces is more；In addition, the Nanocrystalline core 11 can generate whirlpool due to high frequency characteristics in high frequency
Stream loss, the portion of energy of VFTO traveling wave, which is absorbed by the Nanocrystalline core 11 and is converted to heat, to shed, VFTO traveling wave amplitude
Also therefore reduce.The configuration of the present invention is simple, at low cost, without manual operation, high reliablity can effectively inhibit the amplitude of VFTO
And steepness.
Those skilled in the art after considering the specification and implementing the invention disclosed here, will readily occur to of the invention its
Its embodiment.This application is intended to cover any variations, uses, or adaptations of the invention, these modifications, purposes or
Person's adaptive change follows general principle of the invention and including the undocumented common knowledge in the art of the present invention
Or conventional techniques.The description and examples are only to be considered as illustrative, and true scope and spirit of the invention are by following
Claim is pointed out.
It should be understood that the present invention is not limited to the precise structure already described above and shown in the accompanying drawings, and
And various modifications and changes may be made without departing from the scope thereof.The scope of the present invention is limited only by the attached claims.
Claims (6)
1. a kind of nanocrystalline magnetic loop device is fixed on gas insulating enclosed switch equipment (7) characterized by comprising nanometer
Brilliant magnet ring string (1), protective shell (2), shielding case (3) and insulating part (4)；
The Nanocrystalline core string (1) is arranged on the gas insulating enclosed switch equipment (7)；
The Nanocrystalline core string (1) includes several Nanocrystalline cores (11)；
Axial close-packed arrays of each Nanocrystalline core (11) along the gas insulating enclosed switch equipment (7)；
It is connected between the Nanocrystalline core (11) of adjacent two by the first adhesive layer (5)；
The protective shell (2) is set in the outside of the Nanocrystalline core string (1)；
The internal diameter of the protective shell (2) is equal with the outer diameter of the Nanocrystalline core (11)；
The shielding case (3) is connected with the protective shell (2) by the second adhesive layer (6)；
The both ends of the Nanocrystalline core string (1) are equipped with the insulating part (4)；
The insulating part (4) is connected with the adjacent Nanocrystalline core (11) by first adhesive layer (5)；
The outer diameter of the Nanocrystalline core (11) is 750mm~770mm；
The internal diameter of the Nanocrystalline core (11) is 690mm~710mm；
The protective shell (2) is the cylindrical tube made of aluminium alloy；
Second adhesive layer (6) is the two-sided glue bonding layer of silicone grease.
2. nanocrystalline magnetic loop device according to claim 1, which is characterized in that the Nanocrystalline core (11) is by iron-based
Cylindrical structural body made of nanocrystalline material.
3. nanocrystalline magnetic loop device according to claim 2, which is characterized in that the Nanocrystalline core (11) with a thickness of
20mm~40mm.
4. nanocrystalline magnetic loop device according to claim 1, which is characterized in that the shielding case (3) is by stainless steel
At cylindrical tube.
5. nanocrystalline magnetic loop device according to claim 1, which is characterized in that the material of the insulating part (4) is epoxy
Resin.
6. nanocrystalline magnetic loop device according to claim 1 or 5, which is characterized in that first adhesive layer (5) is non-molten
Type epobond epoxyn adhesive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611043763.XA CN106505457B (en) | 2016-11-21 | 2016-11-21 | A kind of nanocrystalline magnetic loop device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611043763.XA CN106505457B (en) | 2016-11-21 | 2016-11-21 | A kind of nanocrystalline magnetic loop device |
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| Publication Number | Publication Date |
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| CN106505457A CN106505457A (en) | 2017-03-15 |
| CN106505457B true CN106505457B (en) | 2019-07-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611043763.XA Active CN106505457B (en) | 2016-11-21 | 2016-11-21 | A kind of nanocrystalline magnetic loop device |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107068457B (en) * | 2017-05-12 | 2019-08-13 | 平高集团有限公司 | A kind of included VFTO inhibits the switch of function |
| CN106992510B (en) * | 2017-05-25 | 2019-10-15 | 云南电网有限责任公司电力科学研究院 | Inhibit the magnetic ring device of very fast transient overvoltage in gas-insulated switchgear |
| CN109888740B (en) * | 2019-01-23 | 2021-04-30 | 平高集团有限公司 | VFTO restraining device and GIS equipment |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102749559A (en) * | 2012-07-09 | 2012-10-24 | 云南电力试验研究院（集团）有限公司电力研究院 | VFTO (Very Fast Transient Overvoltage) online measurement and alarm system for electric power |
| CN103236684A (en) * | 2013-04-17 | 2013-08-07 | 清华大学 | High-frequency magnet ring device for restraining very fast transient overvoltage |
| CN205264589U (en) * | 2015-12-08 | 2016-05-25 | 新东北电气集团超高压有限公司 | Restrain device that isolator operation produced VFTO |
| CN206195229U (en) * | 2016-11-21 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Nanocrystalline magnetic ring device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0382305A (en) * | 1989-08-24 | 1991-04-08 | Toshiba Corp | Gas-insulated switchgear |
-
2016
- 2016-11-21 CN CN201611043763.XA patent/CN106505457B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102749559A (en) * | 2012-07-09 | 2012-10-24 | 云南电力试验研究院（集团）有限公司电力研究院 | VFTO (Very Fast Transient Overvoltage) online measurement and alarm system for electric power |
| CN103236684A (en) * | 2013-04-17 | 2013-08-07 | 清华大学 | High-frequency magnet ring device for restraining very fast transient overvoltage |
| CN205264589U (en) * | 2015-12-08 | 2016-05-25 | 新东北电气集团超高压有限公司 | Restrain device that isolator operation produced VFTO |
| CN206195229U (en) * | 2016-11-21 | 2017-05-24 | 云南电网有限责任公司电力科学研究院 | Nanocrystalline magnetic ring device |
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