CN106501884A - A kind of processing technology of sub-wavelength structure plano-convex microlens array - Google Patents
A kind of processing technology of sub-wavelength structure plano-convex microlens array Download PDFInfo
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- CN106501884A CN106501884A CN201611075352.9A CN201611075352A CN106501884A CN 106501884 A CN106501884 A CN 106501884A CN 201611075352 A CN201611075352 A CN 201611075352A CN 106501884 A CN106501884 A CN 106501884A
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- photoresist
- microlens array
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- processing technology
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
Abstract
The invention belongs to micronano optical and beam shaping field, specially a kind of processing technology of sub-wavelength structure plano-convex microlens array.The present invention is improved based on photoresist heat reflow method, by realizing the effective control to lenticule pattern to the exposure of positivity Other substrate materials, development, etching and accurate calculating technique duration, produce that radius of curvature is less, more crypto set microlens array on substrate, and then realize that lenticule beam collimation and Coupling power strengthen.The present invention has small volume, simple structure, processing technology maturation and experimental repeatability good, and can strengthen the output, realization of light source focusing, collimation to light source.
Description
Technical field
The invention belongs to micronano optical and beam shaping, more particularly to lenticular processing technology thereof, specially one
Plant the processing technology of sub-wavelength structure plano-convex microlens array.
Background technology
Lens are a kind of very important optical elements, and it belongs to passive optical component, in optical system be used for assemble,
Diverging light radiation.Common lens volume is bigger, and human eye can be seen.With the progress of science and technology, instrument and equipment court
Light, mechanical, electrical integrated trend development.Not only manufacturing process is complicated for the optical element manufactured using traditional method, and
The optical element dimension that manufactures is big, weight is big, can not meet the needs of current development in science and technology.At present, have been able to make
The very little lens of diameter and lens arra is made, this lens can not be typically identified by the human eye with lens arra, only
With the equipment such as microscope, scanning electron microscope, atomic force microscope just it is observed that, here it is lenticule.Microlens array has chi
Very little little, light weight the advantages of be easy to integrated and array, is made up of for micron-sized lens clear aperature and relief depth,
It not only has the basic functions such as focusing, the imaging of conventional lenses, and there is the characteristics of unit size is little, integrated level is high, makes
Obtain it and can complete the function that traditional optical elements cannot be completed, and many new optical systems can be constituted.As Functional Unit
Part, more dense lenticule unit can strengthen the interference effect between each optical channel, and less lens unit aperture can make
In optical channel, the diffraction effect of light energy becomes obvious, finally influences whether the equal Shu Xiaoguo of optical system, therefore lenticule battle array
It is listed in the multiple systems such as wavefront sensing, light cumulative, light shaping to be used widely.
Photoresist heat reflow method (melting photoresist method) is that Poporie was proposed in 1988, and whole technical process can be with
It is divided into three steps：1st, the photoresist on substrate is exposed under the masking of mask, exposing patterns are rounded, rectangle or positive six side
Shape；2nd, to exposure after photoresist developed and cleaned residual substance；3rd, it is positioned on heating platform, hot melt molding.Due to
This method has process is simple, and the requirement to material and facility is relatively low, and technological parameter is stable and easily controllable, and it is easy etc. to replicate
Advantage, is widely used in the middle of the making of microlens array.But there is also using the microlens array of this fabrication techniques
Shortcomings：1st, due to photoresist for baseplate material has infiltration phenomenon, attached with substrate when photoresist is in molten condition
It is certain to put forth effort, then after melting photoresist final molding there is infiltration angle between lenticule spherical profile and substrate,
The curvature for making lenticular marginal existence certain, and mid portion sink；2nd, the fill factor, curve factor of generally microlens array
Not over 80%, and photoresist easily adhesion after being melted down, after adjacent melting photoresist is once contact, will not be formed
The face shape of mirror, as fill factor, curve factor is not high, prevents the light of incidence from making full use of, and can cause background noise；3rd, due to light
The mechanical performance and chemical property of photoresist itself is poor, and optical property is not high yet, be not suitable as final lenticule or its
The material of his micro structure.
Notification number for CN104614936A patent document in disclose《A kind of manufacture method of microlens array》, utilize
Photoresist heat reflow method, is heated to reflux negative photo glue-line, realizes based on the figure for designing, using exposure technology lenticular
Planar structure, is heated to reflux making microlens array by using negative photoresist, as after negative glue development, figure has harmomegathus,
Development effect is caused to deform, it is impossible to make lens keep good spherical morphology, and micro- using produced in the patent documentation
Lens radius of curvature is 640 μm, far from meeting miniaturization, the requirement of miniaturization.
Notification number for CN104423177A patent document in disclose《Lenticule manufacture method》, using Photoresist reflow
Method, forms a microlens material and substrate；A photomask is placed above microlens material, is covered through above-mentioned light using a light beam
Template is irradiated in above-mentioned microlens material and carries out an exposure technology, and afterwards microlens material is developed, reflux technique shape
Into microlens array.Due to the restriction of mask plate structure, the microlens array that produces assumes two kinds of specification lens arrangements, they
Of different sizes, shape differs, in regularly arranged.This invention takes full advantage of the gap between lenticule unit, improves micro-
The utilization rate of mirror material, but the microlens array design of this structure, do not realize beam collimation and improve Coupling power
Strengthen.
Content of the invention
For above-mentioned existing problems or deficiency, the invention provides a kind of making of sub-wavelength structure plano-convex microlens array
Technique, is improved based on photoresist heat reflow method, by exposing to positivity Other substrate materials, developing, etch and accurately calculate
Technique duration realizing the effective control to lenticule pattern, produce in microlens substrate radius of curvature less, more
Intensive microlens array, and then realize that lenticule beam collimation and Coupling power strengthen.
Technical solution of the present invention is, a kind of processing technology of sub-wavelength structure plano-convex microlens array：
Step 1, cleaning microlens substrate；
Step 2, the volume adhesiveness to photoresist for enhancing substrate, carry out pretreatment to which and apply in substrate insulation face
Cover the adhesive aid of one layer of organic compound；
Step 3, the refractive index of foundation photoresist and the lenticular size of required design, are calculated the thickness of photoresist,
And then spin coating positive photoresist；
Step 4, substrate is exposed using uv-exposure equipment, full exposure deforms until photoresist, presents micro-
Lens array；Expose using the mask plate matched with required design lenticule；
Step 5, hot melt molding, heating cause step 4 gained photoresist microlens array to be changed into spherical crown from cylindrical structural
Structure；
Step 6, the photoresist microlens array shape for obtaining step 5 are down etched and are transferred on substrate, using reaction
Ion etching RIE or inductively ion etching ICP, finally give required microlens array.
The present invention is based on the improved lenticule processing technology of Photoresist reflow method, mainly includes：Cleaning, pretreatment,
The techniques such as gluing, photoetching development, hot melt molding.
Further, the substrate is silicon chip, quartz or plating tin indium oxide quartz (ITO).
Further, described positive-tone photo glue material is AZ4620, AZ1500, AZ GXR601 or AZ9260 positivity light
Photoresist material.
Further, the adhesive aid of the organic compound is HDMS.
The present invention will be carried out the micro-nano structure design of light beam synthesis and be combined with lenticular processing technology, improve
Microlens designs technique, produces that a kind of radius of curvature is little, the microlens array that closeness is high.Such design enhances light source
Output, and achieve the focusing to light source and collimation.
In sum, the present invention has small volume, simple structure, processing technology maturation and experimental repeatability good,
And the output, realization of light source focusing, collimation to light source can be strengthened.
Description of the drawings
Fig. 1 is melting photoresist front and back sides scale topography structural representation；
Fig. 2 a are that embodiment figure shifts schematic diagram, and upper part is photoresist, and lower part is ito glass；Fig. 2 b are
The SEM photograph of embodiment, on figure, secret note is step instrument scanning pattern；Step instrument test results of Fig. 2 c for embodiment；
Fig. 3 is output current-power curve contrast before and after the microlens array for loading embodiment.
Specific embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.
1) clean
Microlens substrate (ito glass) is cleaned before making, to remove the pollutant such as the impurity on surface, oil stain.This
In embodiment, we first by ito glass according to sequencing respectively in acetone soln, dehydrated alcohol, each ultrasound in deionized water
15 minutes.Finally ito glass substrate is dried up with nitrogen gun, standby.
2) pretreatment
After cleaning is finished, pretreatment has been carried out to ITO substrate, i.e., one layer of HDMS has been coated in ito glass insulating surfaces
(Hexamethyldisilazane, Chinese name：Hmds), its effect is the adhesion of photoresist during increase gluing
Property.
3) gluing
Design microlens array height be 20 μm, a diameter of 120 μm, 105 μm of hemisphere radius of curvature.High according to this
Degree, using AZ4620 positive-tone photos thickness glue, and is spin-coated on photoresist in ito glass insulating surfaces substrate using sol evenning machine.Applying
Before glue, 10 μm of rubberization thickness being calculated needed for which.It is first maintenance under 600rad/s rotating speeds by sol evenning machine parameter setting
AZ4620 photoresists are spread out by 3s, and photoresist is spin-coated to 10 μm using rotation 45s under 2000rad/s rotating speeds then.
4) photoetching and development
Using KarlSuss MA6 ultraviolet photolithographics machines under mask plate the ito glass substrate of AZ4620 photoresists to spin coating
It is exposed, mask plate is matched with required design lenticule.Do not led due to being subject to ultraviolet light by mask plate shading light part
Cause photoresist degeneration.Next, we by exposure after substrate be put in developer solution, developer solution is TMAH
(Tetramethylammonium Hydroxide, Chinese name：Tetramethylammonium hydroxide) and water 1:8 proportions, by
2min is soaked in developer solution, the degeneration photoresist of photosensitive part is thoroughly dissolved.After the completion of development, continue to toast under 100 °
5min is solidifying photoresist.In order to verify above-mentioned experimental technique reach before design standard, we make use of step instrument test
Ito glass substrate after baking, test obtain result, and cylinder photoresist array is a diameter of 120 μm, be highly 12 μm.
5) hot melt molding
AZ4620 photoresists fusing point at 100 DEG C -140 DEG C, in order to utilize colloid surface tension force to be tied photoresist by cylinder
Structure is changed into spherical cap structure.The present embodiment is by being placed on heating 10min on 140 DEG C of hot plates by above-mentioned cylinder photoresist array.?
To photoresist microlens array, using step instrument test result, can see that pattern size is homogeneous as shown in Figure 2 c, spherical crown curved surface
Radian is good, and is drawn by step instrument test result, and lenticule is highly 12um, a diameter of 120um.
6) transfer etching
By step 5) the photoresist microlens array shape that obtains down etches and is transferred on ito glass, so as to form glass
Glass microlens array.As traditional ion beam etching is when above-mentioned microlens array graphic structure is made, in its etching process
The quadratic effect problem such as redeposition can be produced, so as to have influence on final microlens array pattern, the present embodiment adopts reactive ion
The method of etching (Reactive Ion Etching) carries out microlens array etching technics.
In embodiment, we utilize reactive ion body etching system (its model Oxford PlasmaPro
NGP80RIE) technique is carried out.In due to ito glass etching process main by with F-Ion produces chemical reaction and removes, and
Then rely on and O in photoresist etching process2Reaction, then selects CHF in etching process3And O2As etching gas.In order that light
Photoresist lenticule 1:1 perfection is transferred on ito glass, needs to control the etching ratio in figure transfer process, i.e. photoresist etching
Speed and the ratio of ito glass etch rate, crucial by controlling CHF3And O2Reaching requirement, the present embodiment is in CHF for ratio3
And O2Flow is respectively 22sccm and 3sccm, and intracavity pressure is maintained at 30mTorr, and reactive ion beam etching (RIBE) system radio frequency work(
When rate is set to 200W, now etching ratio is closest to 1 and etch rate is of a relatively high.Finally obtain in ito glass insulating surfaces
Microlens array, its a diameter of 120 μm, be highly 12 μm.Although lenticule height slightly deviation, diameter have basically reached reason
By design-calculated desired size.
Microlens array that the present embodiment is prepared as shown in Fig. 2 the diameter of its lens is 120um is highly
12um, the microlens array of preparation meet miniaturization, the basic demand of miniaturization.In order to verify lenticular light velocity collimation and
Coupling power reinforced effects, experiment test compare under identical voltage, the input condition of current source, whether there is covering lenticule battle array
The impact of the luminous power of the zinc-oxide nano wire material of row.Measured by experiment, contrast current-power curve, test is obtained
The nano thread structure luminous power of loading microlens array enhance by by about one time, up to 253uw, experimental results are such as
Shown in Fig. 3.The microlens array of present invention design, can realize beam collimation, and can realize luminous power coupling well as can be seen here
Close and strengthen.
Claims (4)
1. a kind of processing technology of sub-wavelength structure plano-convex microlens array, comprises the following steps：
Step 1, cleaning microlens substrate；
Step 2, the volume adhesiveness to photoresist for enhancing substrate, carry out pretreatment to which and coat one layer in substrate insulation face
The adhesive aid of organic compound；
Step 3, the refractive index of foundation photoresist and the lenticular size of required design, are calculated the thickness of photoresist, and then
Spin coating positive photoresist；
Step 4, substrate is exposed using uv-exposure equipment, full exposure deforms until photoresist, presents lenticule battle array
Row；Expose using the mask plate matched with required design lenticule；
Step 5, hot melt molding, heating cause step 4 gained photoresist microlens array to be changed into spherical cap structure from cylindrical structural；
Step 6, the photoresist microlens array shape for obtaining step 5 are down etched and are transferred on substrate, using reactive ion
Etching RIE or inductively ion etching ICP, finally give required microlens array.
2. the processing technology of sub-wavelength structure plano-convex microlens array as claimed in claim 1, it is characterised in that：The lenticule
Substrate is silicon chip, and quartz plates tin indium oxide quartz ITO.
3. the processing technology of sub-wavelength structure plano-convex microlens array as claimed in claim 1, it is characterised in that：The positivity light
Photoresist is AZ4620, AZ1500, AZ GXR601 or AZ9260.
4. the processing technology of sub-wavelength structure plano-convex microlens array as claimed in claim 1, it is characterised in that：Described organise
The adhesive aid of compound is HDMS.
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| CN201611075352.9A CN106501884A (en) | 2016-11-30 | 2016-11-30 | A kind of processing technology of sub-wavelength structure plano-convex microlens array |
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| CN201611075352.9A CN106501884A (en) | 2016-11-30 | 2016-11-30 | A kind of processing technology of sub-wavelength structure plano-convex microlens array |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256916A (en) * | 2017-06-30 | 2017-10-17 | 圆融光电科技股份有限公司 | The preparation method and LED of LED |
| CN108128751A (en) * | 2017-12-19 | 2018-06-08 | 苏州工业园区纳米产业技术研究院有限公司 | A kind of silicon ball face dimpling block lithographic method |
| CN111948743A (en) * | 2020-09-24 | 2020-11-17 | 山东元旭光电股份有限公司 | Method for preparing micro lens |
| CN112034540A (en) * | 2020-09-24 | 2020-12-04 | 北京北方华创微电子装备有限公司 | Processing method of micro-convex lens array structure |
| CN113419301A (en) * | 2021-07-21 | 2021-09-21 | 上海芯物科技有限公司 | Preparation method of micro-lens array and wafer |
| CN115267953A (en) * | 2022-07-29 | 2022-11-01 | 深圳通感微电子有限公司 | Method for manufacturing microlens and microlens manufactured thereby |
| CN115437044A (en) * | 2022-07-29 | 2022-12-06 | 深圳通感微电子有限公司 | Microlens preparation method and microlens |
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| US5286338A (en) * | 1993-03-01 | 1994-02-15 | At&T Bell Laboratories | Methods for making microlens arrays |
| JP2003530587A (en) * | 2000-04-05 | 2003-10-14 | イノベイティブ・テクノロジー・ライセンシング・エルエルシー | High fill factor microlens array and manufacturing method |
| CN101144978A (en) * | 2007-10-17 | 2008-03-19 | 中国科学院光电技术研究所 | Method for forming microlens array structure |
| CN103064136A (en) * | 2013-01-16 | 2013-04-24 | 福州大学 | Combined microlens array for integrated imaging three-dimensional (3D) display and manufacturing method thereof |
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| US5286338A (en) * | 1993-03-01 | 1994-02-15 | At&T Bell Laboratories | Methods for making microlens arrays |
| JP2003530587A (en) * | 2000-04-05 | 2003-10-14 | イノベイティブ・テクノロジー・ライセンシング・エルエルシー | High fill factor microlens array and manufacturing method |
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| CN103064136A (en) * | 2013-01-16 | 2013-04-24 | 福州大学 | Combined microlens array for integrated imaging three-dimensional (3D) display and manufacturing method thereof |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107256916A (en) * | 2017-06-30 | 2017-10-17 | 圆融光电科技股份有限公司 | The preparation method and LED of LED |
| CN108128751A (en) * | 2017-12-19 | 2018-06-08 | 苏州工业园区纳米产业技术研究院有限公司 | A kind of silicon ball face dimpling block lithographic method |
| CN108128751B (en) * | 2017-12-19 | 2020-11-27 | 苏州工业园区纳米产业技术研究院有限公司 | Silicon spherical micro-bump etching method |
| CN111948743A (en) * | 2020-09-24 | 2020-11-17 | 山东元旭光电股份有限公司 | Method for preparing micro lens |
| CN112034540A (en) * | 2020-09-24 | 2020-12-04 | 北京北方华创微电子装备有限公司 | Processing method of micro-convex lens array structure |
| CN112034540B (en) * | 2020-09-24 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Processing method of micro-convex lens array structure |
| CN113419301A (en) * | 2021-07-21 | 2021-09-21 | 上海芯物科技有限公司 | Preparation method of micro-lens array and wafer |
| CN115267953A (en) * | 2022-07-29 | 2022-11-01 | 深圳通感微电子有限公司 | Method for manufacturing microlens and microlens manufactured thereby |
| CN115437044A (en) * | 2022-07-29 | 2022-12-06 | 深圳通感微电子有限公司 | Microlens preparation method and microlens |
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