CN113419301A - Preparation method of micro-lens array and wafer - Google Patents

Preparation method of micro-lens array and wafer Download PDF

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Publication number
CN113419301A
CN113419301A CN202110826074.0A CN202110826074A CN113419301A CN 113419301 A CN113419301 A CN 113419301A CN 202110826074 A CN202110826074 A CN 202110826074A CN 113419301 A CN113419301 A CN 113419301A
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array
photoresist
photoresist layer
wafer
aspheric
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焦继伟
陈思奇
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Shanghai Core Technology Co ltd
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Shanghai Core Technology Co ltd
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0012—Arrays characterised by the manufacturing method
    • G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

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Abstract

The embodiment of the specification discloses a method for preparing a micro-lens array, which is used for preparing the micro-lens array on the surface of a wafer and comprises the following steps: forming an SU-8 photoresist layer on the surface of the wafer; forming a positive photoresist micropillar array on the surface of the SU-8 photoresist layer; carrying out thermal reflux treatment on the positive photoresist micropillar array to form an aspheric structure array on the surface of the SU-8 photoresist layer, wherein the aspheric structure array is used as an etching mask of the SU-8 photoresist layer; and etching the SU-8 photoresist layer and the aspheric surface shape structure array until the aspheric surface shape structure array is removed, so as to transfer the shape of the aspheric surface shape structure array to the surface of the SU-8 photoresist layer, thereby forming a micro lens array made of SU-8 materials on the surface of the wafer.

Description

Preparation method of micro-lens array and wafer
Technical Field
The application relates to the technical field of micro-optical-electro-mechanical systems, in particular to a method for preparing a micro-lens array.
Background
The micro lens array is an array formed by arranging a plurality of micron-sized small lenses with the same shape according to a certain rule, and the shape of the small lens can be a circle, a square, a hexagon, a square or other shapes. The micro lens has the characteristics of miniaturization, integration and high design freedom degree, and can realize the functions of laser homogenization, beam splitting, beam focusing, high-sensitivity imaging, collimation, wavefront sensing and the like.
The negative photosensitive epoxy SU-8 material is used as one of materials for manufacturing a micro-lens array, has high light transmittance in visible light and near infrared bands, and can be used for manufacturing large-thickness structures (100 um or even thicker).
Thermal reflow (thermal reflow) is a main processing method for a micro-lens array structure on a wafer, which uses photoresist to form a column or a column array structure with a specific shape, and the photoresist is softened after reaching and exceeding the glass transition temperature by heating, and forms an aspheric (aspheric) micro-lens array under the action of surface tension. The thermal reflow method is suitable for directly forming a microlens array on a wafer, but has problems such as selection of a photoresist material having high light transmittance, limitation of the shape (height and curvature) of the microlens, and the like, and it is difficult to sufficiently satisfy the requirements for focusing and alignment with a low lens height, for example.
In the process of manufacturing the micro-lens array by using the negative photosensitive epoxy resin SU-8, because the thermal reflow process of the SU-8 material is difficult to realize, a relatively complex and relatively high-cost manufacturing method needs to be adopted, such as back 3D diffusion lithography, electron beam gray scale exposure, 3D femtosecond laser direct writing and the like, and researchers also propose that the SU-8 material micro-lens array is manufactured by using a photosensitive acid diffusion (Photoacid diffusion) method, the cost is relatively low, but the defects of complex process, poor controllability of the micro-lens shape, difficult residue removal and the like exist.
In order to solve the above problems, it is desirable to provide a method for manufacturing a microlens array, which can simply manufacture a microlens array made of SU-8 material, and can ensure the yield of products and reduce the cost.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide a method for manufacturing a microlens array.
The embodiment of the specification adopts the following technical scheme:
the embodiment of the present specification provides a method for preparing a microlens array, which is used for preparing the microlens array on a wafer surface, and the method is characterized by comprising the following steps:
forming an SU-8 photoresist layer on the surface of the wafer;
forming a positive photoresist micropillar array on the surface of the SU-8 photoresist layer;
carrying out thermal reflux treatment on the positive photoresist micropillar array to form an aspheric structure array on the surface of the SU-8 photoresist layer, wherein the aspheric structure array is used as an etching mask of the SU-8 photoresist layer;
and etching the SU-8 photoresist layer and the aspheric surface shape structure array until the aspheric surface shape structure array is removed, so as to transfer the shape of the aspheric surface shape structure array to the surface of the SU-8 photoresist layer, thereby forming a micro lens array made of SU-8 materials on the surface of the wafer.
Preferably, the microlens array includes: a platform structure and a plurality of microlenses arranged in an array over the platform structure;
the forming of the SU-8 photoresist layer on the surface of the wafer comprises:
coating SU-8 photoresist on the surface of the wafer;
and carrying out photoetching treatment on the coated SU-8 photoresist to generate an SU-8 photoresist layer with a preset thickness, wherein the preset thickness is not less than the sum of the height of the platform structure and the maximum height of the micro-lens structure.
Preferably, a vertical cavity surface emitting laser array is formed on the surface of the wafer;
the forming of the SU-8 photoresist layer on the surface of the wafer comprises:
and forming an SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array.
Preferably, a center of one microlens in the microlens array is aligned with a center of one vertical cavity surface emitting laser in the vertical cavity surface emitting laser array.
Preferably, the method further comprises:
coating SU-8 photoresist on the surface of the wafer on which the vertical cavity surface emitting laser array is formed;
the forming of the SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array includes:
and carrying out photoetching treatment on the coated SU-8 photoresist to form an SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array, and forming an SU-8 photoresist etching mask at other positions on the surface of the wafer.
Preferably, the forming of the positive photoresist micropillar array on the surface of the SU-8 photoresist layer comprises:
carrying out photoetching treatment on the positive photoresist layer formed on the surface of the SU-8 photoresist layer so as to form the positive photoresist micropillar array on the surface of the SU-8 photoresist layer,
and one positive photoresist cylinder in the positive photoresist micropillar array correspondingly forms one aspheric surface shape structure in the aspheric surface shape structure array.
Preferably, the method further comprises:
coating a positive photoresist on the surface of the wafer with the SU-8 photoresist layer;
the photoetching treatment of the positive photoresist layer formed on the surface of the SU-8 photoresist layer to form the positive photoresist micropillar array on the surface of the SU-8 photoresist layer comprises:
and carrying out photoetching treatment on the coated positive photoresist to form a positive photoresist micropillar array on the surface of the SU-8 photoresist layer, and forming a positive photoresist etching mask on other positions on the surface of the wafer.
Preferably, the performing of the thermal reflow process on the positive photoresist micropillar array comprises:
heating the wafer with the positive photoresist micropillar array to a preset temperature interval by using a hot plate or an oven in the air or nitrogen atmosphere, maintaining the temperature in the preset temperature interval within a preset time period,
the temperature in the preset temperature interval is greater than or equal to the glass transition temperature of the positive photoresist.
Preferably, the etching the SU-8 photoresist layer and the aspheric shape structure array includes:
carrying out plasma etching on the SU-8 photoresist layer and the aspheric surface shape structure array by adopting etching gas with a preset component proportion;
the component proportion of the etching gas is determined according to the etching rate of the positive photoresist and the etching rate of the SU-8 photoresist.
An embodiment of the present disclosure provides a wafer with a microlens array formed on a surface thereof, including:
a substrate;
a vertical cavity surface emitting laser array formed on a surface of the substrate;
and a microlens array formed on the surface of the vertical cavity surface emitting laser array, the microlens array being prepared according to any one of the above-mentioned microlens array preparation methods.
The embodiment of the specification adopts at least one technical scheme which can achieve the following beneficial effects:
the method for preparing a microlens array provided by the embodiment of the specification is used for preparing the microlens array on the surface of a wafer, and comprises the following steps: forming an SU-8 photoresist layer on the surface of the wafer; forming a positive photoresist micropillar array on the surface of the SU-8 photoresist layer; carrying out thermal reflux treatment on the positive photoresist micropillar array to form an aspheric structure array on the surface of the SU-8 photoresist layer, wherein the aspheric structure array is used as an etching mask of the SU-8 photoresist layer; the SU-8 photoresist layer and the aspheric surface shape structure array are etched until the aspheric surface shape structure array is removed, so that the shape of the aspheric surface shape structure array is transferred to the surface of the SU-8 photoresist layer, and the SU-8 microlens array is formed on the surface of the wafer, the preparation method enables the positive photoresist micropillar array generated on the surface of the SU-8 photoresist layer to form the aspheric surface shape structure with consistent volume/area in the thermal reflow treatment process, so that the microlens array with consistent shape and character is obtained, meanwhile, the preparation method can ensure the stability and consistency of the thermal reflow treatment process, so that the thermal reflow process can be used for directly preparing the microlens array on the surface of the wafer, thereby not only improving the yield of products, the cost is also reduced.
Drawings
In order to more clearly illustrate the embodiments of the present specification or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the specification, and for those skilled in the art, other drawings can be obtained according to the drawings without inventive exercise:
fig. 1 is a flowchart of a method for manufacturing a microlens array according to an embodiment of the present disclosure.
Fig. 2 is a schematic structural diagram of a microlens array to be prepared according to an embodiment of the present disclosure.
Fig. 3 is a schematic diagram of a structure of a microlens and an arrangement of a microlens array according to an embodiment of the present disclosure.
Fig. 4 is a flowchart of a method for manufacturing a microlens array according to an embodiment of the present disclosure.
Fig. 5 is a schematic cross-sectional view illustrating an etching mask wafer formed by using a positive photoresist in a process of manufacturing a microlens array according to an embodiment of the present disclosure.
Fig. 6 is a schematic cross-sectional view of a wafer when an etching mask is formed by using SU-8 photoresist in a process of a method for manufacturing a microlens array according to an embodiment of the present disclosure.
Fig. 7 is a schematic structural diagram of a wafer with a microlens array formed on a surface thereof according to an embodiment of the present disclosure.
Detailed Description
In order to make those skilled in the art better understand the technical solutions in the present specification, the technical solutions in the embodiments of the present specification will be clearly and completely described below with reference to the drawings in the embodiments of the present specification, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be obtained by a person skilled in the art without making any inventive step based on the embodiments of the present disclosure, shall fall within the scope of protection of the present application.
In order to solve the problems of complex process, high cost and the like in the process of preparing the microlens array by using the SU-8 photoresist, the method for preparing the microlens array provided by the embodiment of the specification is described in the aspect of technical principle as follows:
as the SU-8 photoresist is a negative photoresist and has obvious difference with the positive photoresist in material performance, and the difference can generate surface inhibition between the two materials, the surface inhibition can inhibit uncontrollable infiltration, flowing and extension of cylinders in the positive photoresist micropillar array on the surface of the SU-8 photoresist in the thermal reflux treatment process and even material fusion between the cylinders, thereby being beneficial to inhibiting the deformation of the positive photoresist cylinders, and the deformation of the positive photoresist cylinders can cause the deformation, deformation and failure of aspheric-surface-shaped structures generated after the thermal reflux treatment once the positive photoresist cylinders deform, so that the volume/area consistency of the positive photoresist micropillar array can be effectively improved through the surface inhibition, the thermal reflux process is controllable, and the shape, the shape and the distribution of a subsequently manufactured microlens array are further improved, Consistency and controllability of the traits.
Furthermore, due to the volume/area consistency of the positive photoresist micro-column array caused by the surface inhibition effect among materials, the distance among columns in the positive photoresist micro-column array can be reduced, so that the density and the filling factor (fill factor) of the prepared micro-lens array are improved, the size of a chip is reduced, and the cost performance is improved.
Example 1
Fig. 1 is a flowchart of a method for manufacturing a microlens array according to an embodiment of the present disclosure.
As shown in fig. 1, the method for manufacturing a microlens array in the present embodiment is used for manufacturing a microlens array on a wafer surface, and includes the following steps:
and S101, forming an SU-8 photoresist layer on the surface of the wafer.
In the embodiment of the present disclosure, the SU-8 photoresist layer may be formed by coating the surface of the wafer with spin coating (spin coating) or spray coating (spray coating), and then performing photolithography processes such as exposure, development, and baking, where the SU-8 photoresist layer is used to form the microlens array on the surface of the wafer.
Among them, the SU-8 photoresist is a negative photosensitive epoxy resin material having high light transmittance, for example, kayaku 3010 available from japan chemical co.
It should be noted that the number of spin-coating or spray-coating is plural, for example, kayaku 3010, 2 to 5 times.
In the embodiment of the specification, the SU-8 photoresist is preferably coated on the surface of the wafer by a spin coating method, and the spin coating method can obtain better thickness uniformity and surface quality, thereby being beneficial to obtaining a high-quality microlens surface.
It should be noted that, after the SU-8 photoresist is polymerized and cross-linked (crosslink) by the photolithography process, the SU-8 photoresist has strong and stable bonding force with the wafer surface, but is difficult to remove, and in order to obtain a clean wafer surface, the excess SU-8 photoresist on the wafer surface can be removed before the SU-8 photoresist is cross-linked.
In one application example, the microlens array includes: a platform structure and a plurality of microlenses arranged in an array over the platform structure;
the forming of the SU-8 photoresist layer on the surface of the wafer comprises:
coating SU-8 photoresist on the surface of the wafer;
and carrying out photoetching treatment on the coated SU-8 photoresist to generate an SU-8 photoresist layer with a preset thickness, wherein the preset thickness is not less than the sum of the height of the platform structure and the maximum height of the micro-lens structure.
Fig. 2 is a schematic structural diagram of a microlens array to be prepared according to an embodiment of the present disclosure.
As shown in fig. 2, a microlens array provided in an embodiment of the present specification includes: a platform structure 201 and a plurality of microlenses 202.
The stage structure 201 is located on the wafer surface, and a plurality of microlenses 202 are arrayed above the stage structure 201.
Fig. 3 is a schematic diagram of a structure of a microlens and an arrangement of a microlens array according to an embodiment of the present disclosure.
Wherein, as shown in fig. 3(a), the thickness H of the platform structure 201, the maximum height of the microlens 202 is H0, and the microlens shape is generally described by the following formulas (1) - (2):
Figure BDA0003173848960000071
Figure BDA0003173848960000072
r is the radius of curvature of the microlens, K is the conic constant (conic constant), R is the distance between any point of the bottom surface of the microlens structure and the center of the bottom surface of the microlens structure, hLThe crown height is high. Typical microlens shapes h (r) include spherical (K ═ 0), or hyperbolic (K ═ 0), or<-1), or parabolic (K ═ 1), or elliptical (K)>0,-1<K<0) Etc., the actually manufactured microlens structure naturally has deviation, but does not affect the technical features of the present invention.
As shown in fig. 3(b) - (c), the plurality of microlenses 202 are typically arranged in two ways: rectangular stacked (rectangular) and hexagonal close-packed (hexagonal) types, uniformly arranged with a minimum distance d between the cells.
To ensure that a microlens array comprising a mesa structure and a plurality of microlenses can be obtained, the SU-8 photoresist layer formed on the wafer surface must have a predetermined thickness so as to have a sufficient thickness to form the microlens array during subsequent processing.
In specific implementation, SU-8 photoresist can be coated on the surface of the wafer, and then the coated SU-8 photoresist is subjected to photoetching treatment to generate an SU-8 photoresist layer with a predetermined thickness, wherein the predetermined thickness is not less than the sum of the height H of the platform structure and the maximum height H0 of the micro-lens structure.
In order to ensure sufficient thickness of the subsequent process and avoid the influence of too high thickness on the subsequent process, for example, too high thickness results in too much etching gas and etching mask material consumption, or too much residue after etching, in the embodiment of the present specification, the predetermined thickness is 20um to 150 um.
And S103, forming a positive photoresist micropillar array on the surface of the SU-8 photoresist layer.
In an application example, the forming of the positive photoresist micropillar array on the surface of the SU-8 photoresist layer comprises:
carrying out photoetching treatment on the positive photoresist layer formed on the surface of the SU-8 photoresist layer so as to form the positive photoresist micropillar array on the surface of the SU-8 photoresist layer,
and one positive photoresist cylinder in the positive photoresist micropillar array correspondingly forms one aspheric surface shape structure in the aspheric surface shape structure array.
Specifically, the positive photoresist on the upper surface of the SU-8 photoresist layer may be subjected to a photolithography process such as exposure, development, baking, and the like to generate a positive photoresist micropillar array, where the micropillar array includes a plurality of positive photoresist pillars arranged in an array.
These positive photoresist columns are used to correspondingly create aspheric shaped structures in subsequent processing.
In an application example, in order to protect other parts of the wafer surface in a subsequent etching process, and generate a protective layer without adding other steps, save resources and reduce cost, the method further comprises: coating a positive photoresist on the surface of the wafer with the SU-8 photoresist layer;
the photoetching treatment of the positive photoresist layer formed on the surface of the SU-8 photoresist layer to form the positive photoresist micropillar array on the surface of the SU-8 photoresist layer comprises:
and carrying out photoetching treatment on the coated positive photoresist to form a positive photoresist micropillar array on the surface of the SU-8 photoresist layer, and forming a positive photoresist etching mask on other positions on the surface of the wafer.
When the method is specifically implemented, a positive photoresist is coated on the whole surface of the wafer with the SU-8 photoresist layer by means of spin coating or spray coating, a positive photoresist micropillar array is formed on the surface of the SU-8 photoresist layer by the photoetching processes of exposure, development, baking and the like, and a positive photoresist etching mask is formed at other positions on the surface of the wafer.
The positive photoresist etching mask is used for protecting other positions on the surface of the wafer in the subsequent etching process, so that damage caused by etching is avoided.
Wherein, the positive photoresist can be AZ4562 positive photoresist.
It should be noted that the number of spin-coating or spray-coating may be a single time or multiple times, for example, a single spin-coating or spray-coating of AZ4562 positive photoresist with a coating thickness of 3 μm, or, for example, a spin-coating or spray-coating of AZ4562 positive photoresist 2-5 times with a coating thickness of 5-15 μm.
In the embodiment of the specification, the SU-8 photoresist and the positive photoresist are respectively exposed and developed, so that the residual material of the SU-8 photoresist and the residual material of the positive photoresist can be respectively removed, the problem that the residues are difficult to remove due to the mutual influence of two different types of residual materials is avoided, and the clean wafer surface is favorably obtained.
And S105, performing thermal reflow treatment on the positive photoresist micropillar array to form an aspheric-shaped structure array on the surface of the SU-8 photoresist layer, wherein the aspheric-shaped structure array is used as an etching mask of the SU-8 photoresist layer.
Specifically, the positive photoresist micro-column array is subjected to thermal reflow treatment so that the positive photoresist columns are softened, and then an aspheric-shaped structure is formed under the action of surface tension.
Each positive photoresist cylinder correspondingly forms an aspheric shape structure in the aspheric shape structure array.
The aspheric surface shape structure array is used as an etching mask of the SU-8 photoresist layer in the subsequent etching process, so that the shape of the aspheric surface shape structure array can be transferred to the surface of the SU-8 photoresist layer.
In an application example, the performing of the thermal reflow process on the positive photoresist micropillar array includes:
and heating the wafer with the positive photoresist micropillar array to a preset temperature interval by using a hot plate or an oven in the air or nitrogen atmosphere, and maintaining the temperature in the preset temperature interval within a preset time period.
The temperature in the preset temperature interval is greater than or equal to the glass transition temperature of the positive photoresist.
For example, for AZ4562 positive photoresist, a wafer on which an AZ4562 positive photoresist micropillar array is formed may be heated to 145 ℃ for 30min in a nitrogen atmosphere using an oven, and the wafer is maintained at 145 ℃ to form an AZ4562 aspheric-shaped structure array on the surface of the SU-8 photoresist layer.
It should be noted that the predetermined temperature interval and the predetermined time period can be set according to actual needs, and are not limited specifically here.
In the embodiment of the specification, the SU-8 photoresist layer formed after the SU-8 photoresist is polymerized and crosslinked (crosslink) through a photoetching process can enable the positive photoresist to keep stable in property and structure in the thermal reflow process, so that the stability and consistency of the thermal reflow process are ensured.
And S107, etching the SU-8 photoresist layer and the aspheric surface shape structure array until the aspheric surface shape structure array is removed, so as to transfer the shape of the aspheric surface shape structure array to the surface of the SU-8 photoresist layer, thereby forming the SU-8 microlens array on the surface of the wafer.
Specifically, the aspheric surface shape structure array and the SU-8 photoresist layer located below the aspheric surface shape structure array are etched by using plasma until the aspheric surface shape structure array is completely removed, at the moment, because the thickness of the aspheric surface shape structure is not uniform, a thinner part in the aspheric surface shape structure is removed firstly in the etching process, at the moment, the plasma continuously etches the SU-8 photoresist layer downwards until the thickest part in the aspheric surface shape structure is completely removed, so that the SU-8 photoresist layer is etched to a preset shape, 3D transfer of the aspheric surface shape structure array to the SU-8 photoresist layer is realized, and finally the aspheric surface micro-lens array made of SU-8 materials is manufactured.
It should be noted that if the etching rates of the plasma positive photoresist and the SU-8 photoresist are the same, the shape completely identical to the aspherical shape structure array is formed on the surface of the SU-8 photoresist layer, and if the etching rates of the plasma positive photoresist and the SU-8 photoresist are different, the predetermined shape can be formed on the surface of the SU-8 photoresist layer by adjusting the etching rates.
It should be further noted that the etching rate of the positive photoresist and the SU-8 photoresist by the plasma can be adjusted according to actual needs, and is not specifically limited herein.
It should be noted that, in an application example, since the thickness of the SU-8 photoresist coated on the surface of the wafer is not less than the sum of the height H of the platform structure and the maximum height H0 of the microlens structure, after the etching is completed, the shape of the aspheric shape structure array is transferred to the surface of the SU-8 photoresist, so that the aspheric microlens array made of SU-8 material as shown in fig. 2 can be formed, where the aspheric microlens array includes a platform structure and a plurality of microlenses arranged in an array above the platform structure.
Through the mode, the SU-8 photoresist layer with the preset thickness is directly utilized to generate the aspheric surface micro-lens array, so that the platform structure and the plurality of micro-lenses arrayed above the platform structure are integrally formed, and the optical waveguide structure has good structural stability and light transmission.
It should be noted that, in the embodiment of the present disclosure, the etching process should remove both the aspheric structure array and the positive photoresist etching mask, so that other portions of the wafer surface are exposed again while the wafer surface obtains a complete aspheric microlens array.
In an application example, the etching the SU-8 photoresist layer and the array of aspheric shape structures includes:
carrying out plasma etching on the SU-8 photoresist layer and the aspheric surface shape structure array by adopting etching gas with a preset component proportion;
the component proportion of the etching gas is determined according to the etching rate of the positive photoresist and the etching rate of the SU-8 photoresist.
In specific implementation, the etching rates of the positive photoresist and the SU-8 photoresist are different according to the component proportions of different etching gases, and the etching selection ratio can be adjusted by adjusting the component proportions of the etching gases, so that the etching process is controllable.
Wherein the etching selection ratio is the ratio of the etching rate of the SU-8 photoresist to the etching rate of the positive photoresist, and the selection ratio is linearly related to H/H0.
For example, on a SAMCO RIE bench, the etching gas is 5% SF6/95％O2Under the condition of 250W power, the etching rate of SU-8 photoresist is about 120 mu m/h, the etching rate of AZ4562 is about 200um/h, and the selection ratio is 0.6: 1.
It should be noted that, since the etching rate and the selection ratio are greatly related to the etching machine and the etching conditions, the composition ratio of the etching gas can be set according to actual needs, and is not limited specifically here.
In the embodiment of the specification, the duration of the plasma etching is controlled by adjusting the component ratio of the etching gas, so that the damage of the etching to the surface of the wafer is reduced as much as possible.
In the embodiment of the specification, the etching gas is made of SF6Gas and O2And (4) gas composition.
The etching gas may be composed of other gases capable of plasma etching the photoresist.
In the embodiment of the specification, an SU-8 photoresist layer is formed on the surface of the wafer, and the SU-8 photoresist layer is used for forming the microlens array; forming a positive photoresist micropillar array on the surface of the SU-8 photoresist layer; carrying out thermal reflux treatment on the positive photoresist micropillar array to form an aspheric structure array on the surface of the SU-8 photoresist layer, wherein the aspheric structure array is used as an etching mask of the SU-8 photoresist layer; the SU-8 photoresist layer and the aspheric surface shape structure array are etched until the aspheric surface shape structure array is removed, so that the shape of the aspheric surface shape structure array is transferred to the surface of the SU-8 photoresist layer, and the SU-8 microlens array is formed on the surface of the wafer, the preparation method enables the positive photoresist micropillar array generated on the surface of the SU-8 photoresist layer to form the aspheric surface shape structure with consistent volume/area in the thermal reflow treatment process, so that the microlens array with consistent shape and character is obtained, meanwhile, the preparation method can ensure the stability and consistency of the thermal reflow treatment process, so that the thermal reflow process can be used for directly preparing the microlens array on the surface of the wafer, thereby not only improving the yield of products, the cost is also reduced.
Example 2
Vertical Cavity Surface Emitting Lasers (VCSELs), an important light source, can be used for low optical power data communication and parallel optical interconnection, and a range of high optical power applications such as optical pumping, optical driving, 3D sensing, and LiDAR systems.
Recently, with the application of explosion in the consumer electronics field such as smartphone 3D face recognition, VCSELs show great market potential in the optical sensing field in high-speed optical communication, biomedicine, consumer, internet of things, robots, industry, automotive products, and only the market scale in the consumer electronics field can reach billions of yuan RMB.
VCSELs are typically fabricated on gaas wafers with a number of advantages: the round emergent light spot is easier to be coupled with the optical fiber, the coupling efficiency is high, a single longitudinal mode is easy to realize, and the integration is easy, so that the sensor has great advantages in the field of sensing, meanwhile, the vertical light emitting of the VCSEL is more suitable for manufacturing a two-dimensional array, and the prepared product is small in size, so that the high packaging density, the low threshold current and the low energy consumption can be obtained. Therefore, compared with a traditional edge-emitting semiconductor laser (EEL) array, the VCSEL array has obvious advantages in array scalability, uniformity and yield.
However, in practical applications of VCSEL arrays, the large beam divergence angle tends to reduce the far-field beam profile, which severely limits the working distance of VCSEL integration systems, and therefore, the VCSEL array usually needs to be used with external micro-optical components to improve the beam collimation or focusing.
Based on this, in example 2 of the present specification, on the basis of example 1, there is provided a method for manufacturing a microlens array on a surface of a wafer on which a vertical cavity surface emitting laser array is formed.
In embodiment 2, the same explanation is omitted for the same apparatus as in embodiment 1.
Fig. 4 is a flowchart of a method for manufacturing a microlens array according to an embodiment of the present disclosure.
And S401, forming an SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array.
The SU-8 photoresist layer is used to form a micro lens array on the surface of the VCSEL array.
Fig. 5 is a schematic cross-sectional view illustrating an etching mask wafer formed by using a positive photoresist in a process of manufacturing a microlens array according to an embodiment of the present disclosure.
In the embodiment of the present disclosure, as shown in fig. 5a, a vertical cavity surface emitting laser array is formed on the surface of the wafer.
The metal electrode is also formed on the other part of the wafer surface.
As shown in fig. 5b, a vertical cavity surface emitting laser array is formed on the surface of the wafer, SU-8 photoresist is coated on the surface of the vertical cavity surface emitting laser array, and an SU-8 photoresist layer with a predetermined thickness is formed after the coated SU-8 photoresist is subjected to a photolithography process.
In an application example, an etching mask may be formed at another position on the surface of the wafer by using SU-8 photoresist, where the method further includes:
coating SU-8 photoresist on the surface of the wafer on which the vertical cavity surface emitting laser array is formed;
the forming of the SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array includes:
and carrying out photoetching treatment on the coated SU-8 photoresist to form an SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array, and forming an SU-8 photoresist etching mask at other positions on the surface of the wafer.
Fig. 6 is a schematic cross-sectional view of a wafer when an etching mask is formed by using SU-8 photoresist in a process of a method for manufacturing a microlens array according to an embodiment of the present disclosure.
In specific implementation, as shown in fig. 6, the SU-8 photoresist is first coated on the entire surface of the wafer on which the vcsel array is to be formed by spin coating or spray coating, and then the SU-8 photoresist layer is formed on the vcsel array surface by photolithography processes such as exposure, development, and baking, and an SU-8 photoresist etching mask is formed at other positions on the wafer surface.
The SU-8 photoresist etching mask is used for protecting other positions on the surface of the wafer in the subsequent etching process, so that the damage of etching on the wafer is avoided.
It should be noted that, in order to obtain a complete aspheric microlens array after the etching is finished and to expose the other portions of the wafer surface again, the thickness of the SU-8 photoresist layer is greater than that of the SU-8 photoresist etching mask.
Specifically, the thickness difference t between the SU-8 photoresist layer and the SU-8 photoresist etching mask can be controlled by the length of the developing time.
Preferably, the thickness difference t is not more than 10 μm, which is advantageous for the coating of a positive photoresist in a subsequent step.
And S403, forming a positive photoresist micropillar array on the surface of the SU-8 photoresist layer.
As shown in fig. 5c, a positive photoresist is coated on the surface of the wafer on which the SU-8 photoresist layer is formed, and after the coated positive photoresist is subjected to a photolithography process, a positive photoresist micropillar array is formed on the surface of the SU-8 photoresist layer, and a positive photoresist etching mask is formed on other parts of the wafer.
Each pillar in the array of positive photoresist micropillars is correspondingly positioned above one vertical cavity surface emitting laser in the array of vertical cavity surface emitting lasers.
In the embodiments of the present disclosure, the pillars in the positive photoresist micropillar array may be cylindrical, rectangular parallelepiped or square, and preferably, the pillars in the positive photoresist micropillar array are cylindrical, and the distance between the pillars is not greater than 5 μm.
If the SU-8 photoresist is used to form the etching mask on the other portion of the wafer surface in step S401, the positive photoresist is not used to form the etching mask on the other portion of the wafer surface in step S403.
And S405, performing thermal reflow treatment on the positive photoresist micropillar array to form an aspheric-shaped structure array on the surface of the SU-8 photoresist layer, wherein the aspheric-shaped structure array is used as an etching mask of the SU-8 photoresist layer.
As shown in fig. 5d, after the thermal reflow process, an array of aspheric structures is formed on the surface of the SU-8 photoresist layer.
And S407, etching the SU-8 photoresist layer and the aspheric surface shape structure array until the aspheric surface shape structure array is removed, so as to transfer the shape of the aspheric surface shape structure array to the surface of the SU-8 photoresist layer, thereby forming the SU-8 microlens array on the surface of the wafer.
Specifically, the center of one microlens in the prepared microlens array is aligned with the center of one vertical cavity surface emitting laser in the vertical cavity surface emitting laser array.
As shown in fig. 5e, after the positive photoresist as the etching mask on the surface of the wafer is completely removed, the SU-8 microlens array is formed above the vertical cavity surface emitting laser array, and the other portion of the wafer is exposed again.
It should be noted that, in the embodiment of the present disclosure, the etching process should remove both the aspheric structure array and the positive photoresist etching mask, so that other portions of the wafer surface are exposed again while the wafer surface obtains a complete aspheric microlens array.
The specific implementation process of the steps S401 to S407 is referred to as steps S101 to S107 disclosed in embodiment 1, and details are not repeated here.
In the embodiment of the present description, the thickness of the platform structure in the microlens array is related to parameters such as the focal length of the microlens and the size of the vertical cavity surface emitting laser, and the platform structure is used to enable the microlens to effectively converge light into the vertical cavity surface emitting laser region, that is, to ensure that the light passing through the platform structure is effectively collimated by the corresponding microlens, and the greater the focal length of the microlens, the greater the platform structure pair thickness, the better the convergence effect.
The focal length of the micro lens is determined by parameters such as the curvature radius of the lens, the refractive index of the material and the like.
Example 3
Based on the same concept, the embodiments of the present disclosure also provide a wafer with a microlens array formed on a surface thereof.
Fig. 7 is a schematic structural diagram of a wafer with a microlens array formed on a surface thereof according to an embodiment of the present disclosure.
As shown in fig. 7, the wafer with the microlens array formed on the surface in the present embodiment includes:
a substrate;
a vertical cavity surface emitting laser array formed on a surface of the substrate;
and a microlens array formed on the surface of the vertical cavity surface emitting laser array, the microlens array being prepared according to any one of the above-mentioned microlens array preparation methods.
In specific implementation, the emergent rays emitted by the vertical cavity surface emitting laser array pass through the micro-lens array to form parallel light emergence through the height of the platform structure and the focal length of the micro-lens structure which are respectively set.
While certain embodiments of the present disclosure have been described above, other embodiments are within the scope of the following claims. In some cases, the actions or steps recited in the claims may be performed in a different order than in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily have to be in the particular order shown or in sequential order to achieve desirable results. The embodiments in the present specification are described in a progressive manner, and the same and similar parts among the embodiments are referred to each other, and each embodiment focuses on the differences from the other embodiments.
It should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
The above description is only an example of the present specification, and is not intended to limit the present application. Various modifications and changes may occur to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of the claims of the present application.

Claims (10)

1. A method for preparing a micro-lens array on a wafer surface comprises the following steps:
forming an SU-8 photoresist layer on the surface of the wafer;
forming a positive photoresist micropillar array on the surface of the SU-8 photoresist layer;
carrying out thermal reflux treatment on the positive photoresist micropillar array to form an aspheric structure array on the surface of the SU-8 photoresist layer, wherein the aspheric structure array is used as an etching mask of the SU-8 photoresist layer;
and etching the SU-8 photoresist layer and the aspheric surface shape structure array until the aspheric surface shape structure array is removed, so as to transfer the shape of the aspheric surface shape structure array to the surface of the SU-8 photoresist layer, thereby forming a micro lens array made of SU-8 materials on the surface of the wafer.
2. The method of claim 1, wherein the microlens array comprises: a platform structure and a plurality of microlenses arranged in an array over the platform structure;
the forming of the SU-8 photoresist layer on the surface of the wafer comprises:
coating SU-8 photoresist on the surface of the wafer;
and carrying out photoetching treatment on the coated SU-8 photoresist to generate an SU-8 photoresist layer with a preset thickness, wherein the preset thickness is not less than the sum of the height of the platform structure and the maximum height of the micro-lens structure.
3. The method of claim 1, wherein the wafer surface is formed with an array of vertical cavity surface emitting lasers;
the forming of the SU-8 photoresist layer on the surface of the wafer comprises:
and forming an SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array.
4. The method of claim 3, wherein a center of one microlens in the microlens array is aligned with a center of one VCSEL in the VCSEL array.
5. The method of claim 3, further comprising:
coating SU-8 photoresist on the surface of the wafer on which the vertical cavity surface emitting laser array is formed;
the forming of the SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array includes:
and carrying out photoetching treatment on the coated SU-8 photoresist to form an SU-8 photoresist layer on the surface of the vertical cavity surface emitting laser array, and forming an SU-8 photoresist etching mask at other positions on the surface of the wafer.
6. The method of claim 1, wherein forming the positive photoresist micropillar array on the surface of the SU-8 photoresist layer comprises:
carrying out photoetching treatment on the positive photoresist layer formed on the surface of the SU-8 photoresist layer so as to form the positive photoresist micropillar array on the surface of the SU-8 photoresist layer,
and one positive photoresist cylinder in the positive photoresist micropillar array correspondingly forms one aspheric surface shape structure in the aspheric surface shape structure array.
7. The method of claim 6, further comprising:
coating a positive photoresist on the surface of the wafer with the SU-8 photoresist layer;
the photoetching treatment of the positive photoresist layer formed on the surface of the SU-8 photoresist layer to form the positive photoresist micropillar array on the surface of the SU-8 photoresist layer comprises:
and carrying out photoetching treatment on the coated positive photoresist to form a positive photoresist micropillar array on the surface of the SU-8 photoresist layer, and forming a positive photoresist etching mask on other positions on the surface of the wafer.
8. The method of claim 1, wherein the performing a thermal reflow process on the array of positive-tone photo-resist micropillars comprises:
heating the wafer with the positive photoresist micropillar array to a preset temperature interval by using a hot plate or an oven in the air or nitrogen atmosphere, maintaining the temperature in the preset temperature interval within a preset time period,
the temperature in the preset temperature interval is greater than or equal to the glass transition temperature of the positive photoresist.
9. The method of claim 1, wherein the etching the SU-8 photoresist layer and the array of aspheric shaped structures comprises:
carrying out plasma etching on the SU-8 photoresist layer and the aspheric surface shape structure array by adopting etching gas with a preset component proportion;
the component proportion of the etching gas is determined according to the etching rate of the positive photoresist and the etching rate of the SU-8 photoresist.
10. A wafer with a microlens array formed on the surface thereof is characterized by comprising:
a substrate;
a vertical cavity surface emitting laser array formed on a surface of the substrate;
and a microlens array formed on the surface of the vertical cavity surface emitting laser array, the microlens array being the microlens array prepared by the method of preparing a microlens array according to any one of claims 1 to 9.
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