CN219917900U - Vertical optical cavity surface emitting laser with wafer-level integrated optical micro lens - Google Patents
Vertical optical cavity surface emitting laser with wafer-level integrated optical micro lens Download PDFInfo
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- CN219917900U CN219917900U CN202321122406.8U CN202321122406U CN219917900U CN 219917900 U CN219917900 U CN 219917900U CN 202321122406 U CN202321122406 U CN 202321122406U CN 219917900 U CN219917900 U CN 219917900U
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
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Abstract
The utility model discloses a vertical optical cavity surface emitting laser with wafer-level integrated micro-lenses, which relates to the technical field of semiconductor optical devices, and comprises VCSEL chips and wafer-level integrated micro-lens structures, wherein the structures are sequentially as follows in the epitaxial growth sequence direction: an n-type electrode, an n-type substrate, a DBR Bragg reflector, an optically active layer, an oxide window layer, a DBR Bragg reflector, and a microlens layer. The integration of the micro lens layer is integrated by means of epitaxial growth of a wafer, CMOS compatible flow and the like; the upper surface curvature equation of the micro lens is obtained through optimization calculation, can precisely restrict the emergent light of the top Bragg reflector, achieves the functions of focusing, collimation or divergence and the like, and reduces the far field divergence angle of the emergent light of the vertical cavity surface emitting laser chip.
Description
Technical Field
The utility model relates to the technical field of semiconductor optical devices, in particular to a vertical optical cavity surface emitting laser of a wafer-level integrated optical microlens.
Background
The vertical optical cavity surface emitting laser, named Vertical Cavity Surface Emitting Laser, VCSEL for short, is a semiconductor laser with optical mirror surface and wafer surface in parallel distribution, and coherent light amplified by the mirror surface is emitted perpendicular to the wafer surface, and has the advantages of small volume, circular light spots, array arrangement, mass production, lower cost and the like. VCSEL light sources are widely used in applications such as short range data transmission, three-dimensional environment sensing, vehicle-mounted sensing and ranging (LiDAR), unmanned, intelligent vision, and the like.
VCSEL chips commonly use an oxide window layer to limit current injection and photon generation, the size of the oxide window actually controlling the number of transverse modes of the active region electric field. In applications where high power output is required, the oxide window aperture required for VCSELs will also typically be larger, in the tens of microns to hundreds of microns. A larger aperture means that the higher the order of the transverse modes generated, whereas higher order transverse modes generally produce a larger divergence angle under the diffraction effect of the oxidized aperture.
The far field divergence angle of the large aperture multi-mode VCSEL chip is about 20-40 DEG, and the diameter of the light source emission hole is about 10-100 mu m. VCSEL light sources of different apertures have different emission modes and far field divergence angles, but in VCSEL applications the energy of the light source typically needs to be concentrated within as small an angle as possible. The VCSEL chip therefore requires in practical use a shaping process (Beam resharping) of the light Beam emitted by the chip.
Depending on the application requirements, there are available shaping methods such as lens groups, microlens arrays, diffractive optical elements, etc. However, these shaping methods have the problem that the volume is much larger than the light-emitting aperture; meanwhile, the manufacturing method is to make an additional packaging step on the surface of the VCSEL chip or on a supporting structure beyond a certain distance. The package level components often double the volume of the light source module, increasing the process steps, cost and lifetime risks in use in VCSEL fabrication.
Disclosure of Invention
Aiming at the technical problem of contradiction between larger divergence angle and power density requirement of VCSEL light source, the utility model provides a vertical optical cavity surface emitting laser with wafer-level integrated micro lens, which can obtain far field divergence angle small enough (< 10 ℃) and higher power density.
To achieve the above object, the present utility model provides a vertical cavity surface emitting laser with wafer level integrated micro-lenses, comprising: the solar cell comprises an n-type electrode layer, a substrate, an n-type Bragg reflector, an optical active layer, an oxidation window layer, a P-type Bragg reflector and a P-type electrode layer which are sequentially connected, and further comprises a curved surface micro lens, wherein the curved surface micro lens 8 covers the optical active layer, the oxidation window layer, the P-type Bragg reflector and the P-type electrode layer.
Optionally, the curved microlens is integrally formed on the laser surface.
Optionally, the curved microlens has a thickness exceeding 20 microns.
Optionally, the optical active layer, the oxidation window layer, the P-type bragg reflector and the P-type electrode layer form a light outlet hole table top, and the diameter of the curved micro lens is larger than the light outlet hole table top.
Optionally, the bragg reflector is comprised of a multi-layer high reflection quarter wave DBR set.
Optionally, the quarter wave DBR group is formed by a quarter wave aluminum gallium arsenic layer and a quarter wave gallium arsenic layer.
Optionally, the n-type bragg mirror layer number is greater than the p-type bragg mirror layer number.
Optionally, the curved microlens is made of silicon oxide or silicon nitride or other polymers.
Optionally, the curved surface appearance of the curved microlens is spherical, hyperboloid or aspheric.
Optionally, the material of the substrate is gallium arsenide.
The utility model provides a structure of integrating a curved microlens on a VCSEL from a wafer level, wherein the curved microlens 8 shapes a beam emitted by the VCSEL chip, so that the VCSEL chip can obtain a far field divergence angle which is small enough (less than 10 °); the VCSEL chip has small volume, realizes wafer-level integration and has higher power density without an additional packaging structure.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present utility model and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a vertical cavity surface emitting laser with wafer level integrated micro-lenses according to an embodiment of the present utility model.
FIG. 2 is a schematic diagram of a process for fabricating a VCSEL with wafer level integrated micro-lenses according to an embodiment of the present utility model;
FIG. 3 is a diagram showing a second process configuration corresponding to a VCSEL with wafer level integrated micro-lenses according to an embodiment of the present utility model;
fig. 4 shows a normalized far field intensity distribution along an angle in cross section for a vertical cavity surface emitting laser with wafer level integrated micro-lenses according to an embodiment of the present utility model.
Reference numerals: 1. an n-type electrode layer; 2. a substrate; 3. an n-type Bragg reflector; 4. an optically active layer; 5. oxidizing the window layer; 6. a p-type Bragg reflector; 7. a p-type electrode layer; 8. curved microlenses.
Detailed Description
In order to make the novel purpose, technical scheme and beneficial effect of the present embodiment more obvious, the present embodiment is described in detail below with reference to specific embodiments and drawings. The utility model is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant embodiments and are not limiting of the embodiments. It should be further noted that, for convenience of description, only a portion related to implementation of the novel form is shown in the drawings. The specific meaning of the terms in the novel form of this embodiment will be understood by those of ordinary skill in the art in a specific context. The technical schemes in the same embodiment and the technical schemes in different embodiments can be arranged and combined to form a new technical scheme without contradiction or conflict, which are all within the scope of the novel protection of the implementation.
A vertical cavity surface emitting laser having wafer level integrated optical microlenses, comprising:
the n-type Bragg reflector comprises an n-type electrode layer 1, a substrate 2, an n-type Bragg reflector 3, an optical active layer 4, an oxidation window layer 5, a P-type Bragg reflector 6 and a P-type electrode layer 7 which are sequentially connected, and further comprises a curved surface micro lens 8, wherein the curved surface micro lens 8 covers the optical active layer 4, the oxidation window layer 5, the P-type Bragg reflector 6 and the P-type electrode layer 7.
The upper surface curvature equation of the curved surface micro lens 8 is obtained through optimization calculation, and can precisely restrict the emergent light of the P-type Bragg reflector 6, so that functions of focusing, collimation or divergence are realized. The p-type electrode layer 7 is positioned in the curved surface micro lens 8, and the curved surface micro lens 8 is integrated on the surface of the VCSEL chip; the curved microlens 8 shapes the light beam emitted by the VCSEL chip so that the VCSEL chip can obtain a far field divergence angle small enough (< 10 °); the VCSEL chip has small volume, realizes wafer-level integration and has higher power density without an additional packaging structure.
The optical active layer 4, the oxidation window layer 5, the P-type Bragg reflector 6 and the P-type electrode layer 7 form a light outlet hole table surface, the diameter of the curved surface micro lens 8 is larger than that of the light outlet hole table surface, and the thickness of the curved surface micro lens 8 exceeds 20 microns. The proposal can improve the far-field divergence angle of the emergent light beam of the VCSEL chip, so that the light beam obtains higher far-field power density.
The curved surface appearance of the curved microlens 8 is spherical or aspherical, and the aspherical surface includes hyperboloid, elliptic surface and the like. The upper surface curvature equation of the curved surface micro lens 8 is obtained through optimization calculation, and can precisely restrict the emergent light of the P-type Bragg reflector 6, so that functions of focusing, collimation or divergence are realized.
The Bragg reflector is composed of a multi-layer high-reflection quarter-wave DBR group, and the quarter-wave DBR group is composed of a quarter-wave AlGaAs layer and a quarter-wave GaAs layer. The equivalent optical thickness of each layer of the bragg reflection group is one quarter wavelength. The total reflectivity of the mirrors depends on the number of layers of the DBR set, typically greater than 99%, and is considered highly reflective. To meet the top exit requirement, the number of n-type Bragg reflector layers 3 is greater than the number of p-type Bragg reflector layers 6.
The material of the substrate 2 is gallium arsenide, the constituent material of the curved microlens 8 is one of silicon oxide or silicon nitride or a polymer material such as silica gel PDMS.
The utility model provides a preparation technology of vertical optical cavity surface emitting laser with integrated microlens of wafer level, include: a VCSEL chip was prepared as shown in fig. 2; on the surface of the light emitting hole of the VCSEL chip, a curved surface micro lens layer is firstly formed by adopting a vapor deposition method and using silicon oxide or silicon nitride, and then a chemical ion etching is used for forming the curved surface morphology required by the curved surface micro lens 8.
Alternatively, a nanoimprint method is adopted, firstly, polymer material is uniformly coated on the surface of the VCSEL chip, and then nanoimprint is used to form the curved surface morphology required by the curved microlens 8, as shown in fig. 3.
Example 1
This embodiment proposes a VCSEL with wafer level integrated micro-lenses operating at 940nm, 34.5 pairs of n-type bragg mirrors 3, 21 pairs of p-type bragg mirrors 6 can be used. As shown in fig. 1, the central gray part of the window layer 5 is oxidized, the aperture of the optical window is 20um, the thickness of the curved microlens 8 is 100um, and the shape of the curved microlens 8 is spherical. The angle distribution of the far field intensity of the emergent electric field obtained by simulating the VCSEL chip by using the three-dimensional time domain finite difference method is normalized, as shown in fig. 4, it can be seen that the obtained far field divergence angle, i.e., the full width at half maximum angle (full scale Full width at half maximum, abbreviated as FWHM) is about 6.22 degrees.
Claims (10)
1. A vertical cavity surface emitting laser having wafer level integrated optical microlenses, comprising:
the semiconductor device comprises an n-type electrode layer, a substrate, an n-type Bragg reflector, an optical active layer, an oxidation window layer, a P-type Bragg reflector and a P-type electrode layer which are sequentially connected, and further comprises a curved surface micro lens, wherein the curved surface micro lens covers the optical active layer, the oxidation window layer, the P-type Bragg reflector and the P-type electrode layer.
2. A vertical cavity surface emitting laser with wafer level integrated optical micro-lenses according to claim 1, wherein said curved micro-lenses are integrally formed on said laser surface.
3. A vertical cavity surface emitting laser with wafer level integrated optical micro-lenses according to claim 2, wherein said curved micro-lenses have a thickness exceeding 20 microns.
4. The vertical cavity surface emitting laser with wafer level integrated optical microlens according to claim 2, wherein the optically active layer, oxidized window layer, P-type bragg reflector and P-type electrode layer form an exit aperture mesa, and the curved microlens has a diameter larger than the exit aperture mesa.
5. A vertical cavity surface emitting laser with wafer level integrated optical micro-lenses according to claim 1, wherein said bragg reflector is comprised of a multi-layered high reflection quarter wave DBR section.
6. The vcsels with wafer level integrated optical microlenses of claim 5, wherein the quarter-wave DBR group is comprised of a quarter-wave algaas layer and a quarter-wave gaas layer.
7. A vertical cavity surface emitting laser with wafer level integrated optical micro-lenses according to claim 1, wherein the n-type bragg mirror layer number is greater than the p-type bragg mirror layer number.
8. A vertical cavity surface emitting laser with wafer level integrated optical micro-lenses according to claim 1, wherein said curved micro-lenses are composed of silicon oxide or silicon nitride or other polymers.
9. A vertical cavity surface emitting laser with wafer level integrated optical micro-lens according to any of claims 1-8, wherein the curved surface topography of said curved micro-lens is spherical, hyperbolic or aspherical.
10. A vertical cavity surface emitting laser with wafer level integrated optical micro-lenses according to claim 9, wherein the material of said substrate is gallium arsenide.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321122406.8U CN219917900U (en) | 2023-05-11 | 2023-05-11 | Vertical optical cavity surface emitting laser with wafer-level integrated optical micro lens |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321122406.8U CN219917900U (en) | 2023-05-11 | 2023-05-11 | Vertical optical cavity surface emitting laser with wafer-level integrated optical micro lens |
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| Publication Number | Publication Date |
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| CN219917900U true CN219917900U (en) | 2023-10-27 |
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| CN202321122406.8U Active CN219917900U (en) | 2023-05-11 | 2023-05-11 | Vertical optical cavity surface emitting laser with wafer-level integrated optical micro lens |
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- 2023-05-11 CN CN202321122406.8U patent/CN219917900U/en active Active
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