CN113589322A - VCSEL linear array for multi-line laser radar - Google Patents
VCSEL linear array for multi-line laser radar Download PDFInfo
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- CN113589322A CN113589322A CN202110763456.3A CN202110763456A CN113589322A CN 113589322 A CN113589322 A CN 113589322A CN 202110763456 A CN202110763456 A CN 202110763456A CN 113589322 A CN113589322 A CN 113589322A
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- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 230000003287 optical effect Effects 0.000 claims abstract description 25
- 230000001105 regulatory effect Effects 0.000 claims abstract description 7
- 238000003491 array Methods 0.000 claims abstract description 4
- 230000001276 controlling effect Effects 0.000 claims abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000001579 optical reflectometry Methods 0.000 claims description 5
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
- G01S17/93—Lidar systems specially adapted for specific applications for anti-collision purposes
- G01S17/931—Lidar systems specially adapted for specific applications for anti-collision purposes of land vehicles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
Abstract
The invention relates to the technical field of laser detection and semiconductor optoelectronic devices, in particular to a VCSEL linear array facing a multi-line laser radar; the device specifically comprises a semiconductor substrate, a vertical cavity surface emitting laser VCSEL with m-element linear array, and an m-element optical microlens; the VCSEL with m-element linear arrays is prepared on the front side of the semiconductor substrate, and the m-element optical micro lenses are arranged on the back side of the semiconductor substrate in an array manner; the m-element VCSELs are independent from each other and output m paths of mutually incoherent laser signals; the VCSELs correspond to the optical micro lenses one by one, and the optical micro lenses are used for collimating the laser emitted by the corresponding VCSELs and regulating and controlling the light emitting direction to form a multi-line laser beam; the invention realizes the collimation and the beam direction regulation of the VCSEL output laser beam; the optical scanning structure of the laser radar can be simplified, and the cost of the laser radar can be reduced.
Description
Technical Field
The invention relates to the technical field of laser detection and semiconductor optoelectronic devices, in particular to a Vertical Cavity Surface Emitting Laser (VCSEL) linear array facing a multi-line laser radar.
Background
The unmanned technology is the leading-edge technology about to change human life, and the laser radar plays an irreplaceable role in the process of developing the unmanned technology. In recent years, a great deal of work is carried out on the aspects of multi-line work, beam scanning and weight reduction of the laser radar in various enterprises and scientific research institutes, and various requirements of unmanned driving on the laser radar are continuously met. Especially in the aspect of multiline work, commercial lidar with 64 lines or even more is available, and the line number of the unmanned lidar becomes an important index for measuring the performance of the unmanned lidar.
At present, the widely adopted method for realizing the multi-line work of the laser radar is as follows: a plurality of lasers are adopted to work simultaneously, laser signals are emitted at different vertical angles respectively, and horizontal rotation is combined, so that multi-line work is achieved. The method of multi-laser operation will greatly increase the size and weight of the lidar and increase the cost of the components, which is very disadvantageous for the practical application of the lidar. By adopting the integrated laser linear array chip, the volume increase and the cost increase caused by the laser can be reduced. However, the beam regulation of the linear array of the common edge-emitting semiconductor laser is a difficult problem, which not only has great regulation difficulty and high cost, but also is not stable enough, so the application of the laser array in the aspect of laser radar is still in the research stage.
The vertical cavity surface emitting laser VCSEL has the advantage of high-power light beam quality, not only can be used for manufacturing a linear array, but also can be used for manufacturing a two-dimensional area array, so that the vertical cavity surface emitting laser has great application potential in the aspect of laser radars, but the VCSEL array also has the problem of light beam regulation and control. Different from an edge emitting laser, the light emitting direction of the VCSEL is perpendicular to the epitaxial plane, so that an optical element is convenient to integrate, and the regulation and control of output laser beams are further realized. The most common optical element is a lens, and the VCSEL is collimated and focused by integrating a microlens (patent publication No. CN 107453201 a), and the microlens processing technology is well developed. For the application of the multi-line laser radar, however, the array beam of the VCSEL still needs to be regulated by an external beam, thereby increasing the volume, weight and cost of the multi-line laser radar.
Disclosure of Invention
The invention overcomes the defects of the prior art, provides the VCSEL linear array facing the multi-line laser radar aiming at the problem of regulating and controlling the VCSEL array beam, and realizes the collimation and the beam direction regulation and control of the VCSEL output laser beam. And the method is further applied to the multi-line laser radar, and the VCSEL linear array without external beam regulation is realized.
In order to achieve the above object, the present invention is achieved by the following technical solutions.
A VCSEL linear array facing a multi-line laser radar comprises a semiconductor substrate, a vertical cavity surface emitting laser VCSEL with m-element linear arrays and an m-element optical microlens; the VCSEL with m-element linear arrays is prepared on the front side of the semiconductor substrate, and the m-element optical micro lenses are arranged on the back side of the semiconductor substrate in an array manner; the m-element VCSELs are independent from each other and output m paths of mutually incoherent laser signals; the VCSELs correspond to the optical micro lenses one by one, and the optical micro lenses are used for collimating laser emitted by the corresponding VCSELs and regulating and controlling light emitting directions to form multi-line laser beams.
Further, the optical microlens is directly prepared on the back surface of the semiconductor substrate.
Further, the optical micro lens is a refractive lens or a diffractive lens.
Furthermore, the material of the semiconductor substrate is one of GaAs, InP and GaSb.
Further, the vertical cavity surface emitting laser VCSEL includes a vertical cavity resonance structure composed of distributed bragg reflectors DBRs on both sides and a laser active region disposed between the DBRs on both sides, and a light reflectivity of the DBR prepared on the semiconductor substrate is smaller than a light reflectivity of the DBR on a side away from the semiconductor substrate.
Compared with the prior art, the invention has the following beneficial effects:
1. the VCSEL linear array can increase the number of output laser lines by integrating a larger number of VCSELs, and can regulate and control the angle coverage and distribution of output multi-line laser beams by the design adjustment of the substrate micro-lens, so that the line number increase, the vertical scanning range change and the vertical resolution control of the laser radar are realized; the regulation and control function on the beam direction is not only suitable for a linear array, but also suitable for a two-dimensional area array, and the integration level of the chip is further improved; the invention can output multi-path mutually independent and collimated multi-line laser beams with different emergent directions, and meets the application requirements of the multi-line laser radar.
2. The VCSEL linear array is applied to the laser radar, the line number of the laser radar can be adjusted only by replacing the VCSEL linear array chip, and redesign and adjustment of the whole laser radar are not needed.
3. The preparation processes required by the VCSEL linear array are all existing mature process technologies and do not involve complex process procedures, so that the cost of the multi-line laser radar device can be reduced by realizing the practical application of the invention.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a VCSEL linear array facing a multi-line laser radar according to the present invention;
in the figure: 1 is a semiconductor substrate, 2 is a VCSEL, 3 is an optical microlens, and 4 is a multi-line laser beam.
FIG. 2 is a specific embodiment of the present invention: a cross-sectional diagram of a specific device structure of a 16-line laser output VCSEL linear array;
in the figure: 101 is a GaAs semiconductor substrate, 102 is a Distributed Bragg Reflector (DBR) composed of variable-composition AlGaAs, reflectivity is 84%, 103 is a laser active region, 104 is a distributed Bragg reflector composed of variable-composition AlGaAs superlattice, reflectivity is more than 99.5%, 105 is a GaAs secondary epitaxial layer, 106 isSiO2Insulating layers, 107 and 108 are epitaxial-side and substrate-side electrode layers, respectively, and 109 is a microlens array.
FIG. 3 is a graph of the effect of 16-line laser output of a VCSEL linear array in an embodiment of the present invention;
in the figure: 201 is a linear array of VCSELs and 202 is an output 16-line laser beam.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail with reference to the embodiments and the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. The technical solutions of the present invention are described in detail below with reference to the embodiments and the drawings, but the scope of protection is not limited thereto.
The invention provides a VCSEL linear array for a multi-line laser radar, and aims to further improve the integration level of the laser radar and reduce the cost of the laser radar.
Fig. 1 is a schematic diagram of the overall structure of a VCSEL linear array oriented to a multiline lidar. As shown in fig. 1, the linear array of VCSELs facing a multiline lidar comprises: a semiconductor substrate 1, m VCSELs 2 of a linear array of wires, m-element optical microlenses 3. The material of the semiconductor substrate 1 may be GaAs, InP, GaSb, which varies according to the material system of the VCSEL. m is the number of lines which can correspondingly realize the laser radar, each laser in the array is mutually independent, and no mode coupling, phase synchronization, power superposition and other interactions exist, so that the array can output m paths of completely mutually independent laser signals.
The semiconductor substrate 1 is a base for fabricating a VCSEL; each laser in the m-element VCSEL 2 is independent from each other, and mode coupling, phase synchronization, power superposition and other interactions do not exist, so that the array can output m paths of completely mutually independent laser signals; the optical micro-lenses 3 are directly prepared on the back surface of the semiconductor substrate 1, each independent VCSEL 2 is provided with one optical micro-lens 3 corresponding to the optical micro-lens, laser emitted by the VCSEL is dispersed in the substrate and is transmitted to the back micro-lens, and the lenses are used for collimating the dispersed laser and regulating the light emitting direction. After m paths of totally mutually incoherent lasers are collimated and regulated by the micro-lens array, each path of laser beam has different beam directions and is distributed in a certain angle range, so that a multi-line laser beam 4 meeting the application of a laser radar is formed.
The following description is made by using a specific embodiment, which is a 16-element VCSEL linear array facing to a 16-wire unmanned automotive laser radar, the VCSEL adopts a buried structure of a GaAs substrate base, the operating wavelength is 808 nm, the pulse output power of a single VCSEL is greater than 2W, and the specific device structure is shown in fig. 2. Only 3 VCSEL elements in a VCSEL linear array are shown in fig. 2, and 16 VCSEL elements are included in an actual linear array.
As shown in fig. 2, the 16-line VCSEL linear array in the embodiment specifically includes nine sections 101-109, and the descriptions of the sections are shown in the drawing. Wherein the GaAs semiconductor substrate 101 corresponds to 1 in fig. 1.
The two DBR portions 102 and 104 sandwich the laser active region 103 to form a vertical cavity resonance structure of the VCSEL, and the optical reflectivity of 102 is about 84%, and the optical reflectivity of 104 is greater than 99.5%, so that the VCSEL generates laser light to emit from the substrate direction. After etching the VCSEL circular mesa structure array, the second epitaxial semi-insulating GaAs material 105 is used for the optoelectronic isolation of each VCSEL unit, and the transverse optical confinement waveguide structures 102 and 105 of the VCSEL devices are formed together to form a VCSEL linear array, which corresponds to 2 in fig. 1. SiO 22The insulating layer 106 plays a role of consolidating electrical isolation and lateral waveguide, the material and planar structure of the two electrode layers 107 and 108 are different depending on the process platform and specific use, and will not be described in detail in this embodiment, and the material and planar structure 106 and 108 belong to further specific implementation details, which can be classified as a VCSEL array part.
The microlens array 109 corresponds to 3 in fig. 1, in this embodiment, relief-type microlenses are used for laser direct-writing processing, the microlens array is directly prepared on the back surface of the substrate 101, each VCSEL element has a corresponding microlens, 16 VCSELs emit 16 mutually independent laser beams, and each microlens collimates and adjusts the direction of one laser beam.
In this embodiment, an effect diagram of the output 16-line laser beams is shown in fig. 3, where the laser beams output by the VCSEL units at two ends form an angle of 12.4 ° with the normal of the array surface, and the included angles of the laser beams output to the VCSEL unit in the middle are sequentially reduced, so as to form a scanning beam of the 16-line laser radar in a vertical scanning range of 24.8 °. In consideration of the principle that the size of the laser radar is as small as possible, in order to reduce the size of the light outlet, in the implementation, the 16-line laser beams are converged towards the middle and then are diffused along respective directions, and the position where the light beams are converged is the position of the light outlet of the laser radar.
While the invention has been described in further detail with reference to specific preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (5)
1. A VCSEL linear array facing a multiline lidar, comprising a semiconductor substrate (1), m-ary vertical cavity surface emitting lasers VCSELs (2) in a linear array, and m-ary optical microlenses (3); the VCSEL (2) with m-element linear arrays is prepared on the front surface of the semiconductor substrate (1), and the m-element optical micro lenses (3) are arranged on the back surface of the semiconductor substrate (1) in an array; the m-element VCSELs (2) are independent from each other and output m paths of mutually incoherent laser signals; the VCSELs (2) correspond to the optical micro lenses (3) one by one, and the optical micro lenses (3) are used for collimating laser emitted by the corresponding VCSELs (2) and regulating and controlling light emitting directions to form multi-line laser beams (4).
2. A VCSEL linear array facing a multiline lidar according to claim 1, wherein the optical microlens (3) is fabricated directly on the back side of the semiconductor substrate (1).
3. A VCSEL linear array facing a multiline lidar according to claim 1 or 2, characterized in that the optical microlens (3) is a refractive lens or a diffractive lens.
4. A VCSEL linear array facing a multiline lidar according to claim 1, wherein the material of the semiconductor substrate (1) is one of GaAs, InP, GaSb.
5. A VCSEL linear array facing a multiline lidar according to claim 1, wherein the vertical cavity surface emitting laser VCSEL (2) comprises a vertical cavity resonant structure consisting of two sides of a distributed bragg reflector DBR and a laser active region disposed between the two sides of the DBR, the DBR fabricated on the semiconductor substrate (1) having a light reflectivity smaller than the DBR at a side remote from the semiconductor substrate (1).
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| CN202110763456.3A CN113589322A (en) | 2021-07-06 | 2021-07-06 | VCSEL linear array for multi-line laser radar |
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| CN202110763456.3A CN113589322A (en) | 2021-07-06 | 2021-07-06 | VCSEL linear array for multi-line laser radar |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024041298A1 (en) * | 2022-08-26 | 2024-02-29 | 北京石头世纪科技股份有限公司 | Multi-line laser and cleaning device |
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