CN106486607B - 发光元件、发光装置、电子设备以及照明装置 - Google Patents

发光元件、发光装置、电子设备以及照明装置 Download PDF

Info

Publication number
CN106486607B
CN106486607B CN201610791141.9A CN201610791141A CN106486607B CN 106486607 B CN106486607 B CN 106486607B CN 201610791141 A CN201610791141 A CN 201610791141A CN 106486607 B CN106486607 B CN 106486607B
Authority
CN
China
Prior art keywords
light
substance
layer
emitting
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201610791141.9A
Other languages
English (en)
Chinese (zh)
Other versions
CN106486607A (zh
Inventor
濑尾哲史
筒井哲夫
滨田孝夫
广濑智哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN106486607A publication Critical patent/CN106486607A/zh
Application granted granted Critical
Publication of CN106486607B publication Critical patent/CN106486607B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14Carrier transporting layers
    • H10K50/15Hole transporting layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/10OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17Carrier injection layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30Coordination compounds
    • H10K85/351Metal complexes comprising lanthanides or actinides, e.g. comprising europium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/649Aromatic compounds comprising a hetero atom
    • H10K85/657Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6576Polycyclic condensed heteroaromatic hydrocarbons comprising only sulfur in the heteroaromatic polycondensed ring system, e.g. benzothiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/30Highest occupied molecular orbital [HOMO], lowest unoccupied molecular orbital [LUMO] or Fermi energy values
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2101/00Properties of the organic materials covered by group H10K85/00
    • H10K2101/40Interrelation of parameters between multiple constituent active layers or sublayers, e.g. HOMO values in adjacent layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/631Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electroluminescent Light Sources (AREA)
CN201610791141.9A 2015-09-01 2016-08-31 发光元件、发光装置、电子设备以及照明装置 Expired - Fee Related CN106486607B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2015-172107 2015-09-01
JP2015172107 2015-09-01
JP2015233260 2015-11-30
JP2015-233260 2015-11-30
JP2016050742 2016-03-15
JP2016-050742 2016-03-15

Publications (2)

Publication Number Publication Date
CN106486607A CN106486607A (zh) 2017-03-08
CN106486607B true CN106486607B (zh) 2021-03-16

Family

ID=58104420

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610791141.9A Expired - Fee Related CN106486607B (zh) 2015-09-01 2016-08-31 发光元件、发光装置、电子设备以及照明装置

Country Status (4)

Country Link
US (1) US20170062749A1 (enExample)
JP (1) JP6929625B2 (enExample)
KR (1) KR20170027305A (enExample)
CN (1) CN106486607B (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106356463B (zh) * 2016-10-11 2017-12-29 深圳市华星光电技术有限公司 Qled显示装置的制作方法
KR101900775B1 (ko) * 2017-03-20 2018-09-20 주식회사 페타룩스 양자점 발광소자 및 이를 포함하는 백라이트 유닛
CN107665639A (zh) * 2017-03-27 2018-02-06 广东聚华印刷显示技术有限公司 Qled发光显示器件
US10818856B2 (en) * 2017-05-18 2020-10-27 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Method for fabricating thin film transistor, method for fabricating array substrate, and a display apparatus
CN108346751B (zh) * 2017-08-21 2019-06-11 广东聚华印刷显示技术有限公司 电致发光器件及其发光层和应用
CN109428005B (zh) * 2017-08-30 2020-05-08 昆山国显光电有限公司 有机电致发光器件
WO2019049190A1 (ja) * 2017-09-05 2019-03-14 シャープ株式会社 発光デバイス、発光デバイスの製造装置
KR102717448B1 (ko) * 2017-09-12 2024-10-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 발광 장치, 전자 기기, 및 조명 장치
JP2019071249A (ja) * 2017-10-11 2019-05-09 Dic株式会社 発光素子および画像表示装置
KR20200085275A (ko) 2017-11-08 2020-07-14 엔에스 마테리얼스 아이엔씨. 표시 장치
JP2019114780A (ja) * 2017-12-22 2019-07-11 株式会社半導体エネルギー研究所 電子デバイス、発光素子、発光装置、電子機器及び照明装置
US11417851B2 (en) * 2018-02-13 2022-08-16 Sharp Kabushiki Kaisha Light-emitting element, light-emitting device, and device for producing light-emitting element
KR102697768B1 (ko) 2018-03-26 2024-08-21 삼성전자주식회사 전계 발광 소자 및 이를 포함하는 표시 장치
US20210119160A1 (en) * 2018-03-28 2021-04-22 Sharp Kabushiki Kaisha Light-emitting element and display device
US11502266B2 (en) * 2018-03-28 2022-11-15 Sharp Kabushiki Kaisha Light emitting element comprising quantum dots and method for producing light emitting element
US12075642B2 (en) 2018-06-06 2024-08-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and electronic device
WO2019234543A1 (ja) 2018-06-06 2019-12-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、及び電子機器
JP7178215B2 (ja) * 2018-08-30 2022-11-25 エルジー ディスプレイ カンパニー リミテッド 無機発光素子
WO2020049392A1 (ja) 2018-09-05 2020-03-12 株式会社半導体エネルギー研究所 表示装置、表示モジュール、電子機器、及び表示装置の作製方法
CN117316973A (zh) 2018-09-07 2023-12-29 株式会社半导体能源研究所 显示装置、显示模块及电子设备
KR20210064238A (ko) 2018-09-28 2021-06-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 제작 방법, 표시 장치의 제작 장치
CN111370585A (zh) * 2018-12-26 2020-07-03 广东聚华印刷显示技术有限公司 发光器件及显示装置
CN113412438A (zh) 2019-02-06 2021-09-17 株式会社半导体能源研究所 发光器件、发光装置、电子设备、显示装置及照明装置
KR20210149797A (ko) * 2019-04-12 2021-12-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 디바이스, 발광 장치, 발광 모듈, 전자 기기, 및 조명 장치
TW202513513A (zh) 2019-06-14 2025-04-01 日商半導體能源研究所股份有限公司 發光器件、發光裝置、電子裝置及照明設備
US11710760B2 (en) 2019-06-21 2023-07-25 Semiconductor Energy Laboratory Co., Ltd. Display device, display module, electronic device, and manufacturing method of display device
CN114450813B (zh) * 2019-09-19 2024-11-01 夏普株式会社 发光元件和显示器件
KR102712541B1 (ko) * 2019-09-30 2024-09-30 삼성전자주식회사 전계 발광 소자 및 이를 포함하는 표시 장치
CN112786663A (zh) 2019-11-08 2021-05-11 株式会社半导体能源研究所 发光装置、电子设备及照明装置
JP7641724B2 (ja) 2019-11-12 2025-03-07 株式会社半導体エネルギー研究所 機能パネル、表示装置、入出力装置、情報処理装置
US11610877B2 (en) 2019-11-21 2023-03-21 Semiconductor Energy Laboratory Co., Ltd. Functional panel, display device, input/output device, and data processing device
CN111029475A (zh) * 2019-11-25 2020-04-17 深圳市华星光电半导体显示技术有限公司 显示器及其制备方法
CN112151688A (zh) * 2020-09-27 2020-12-29 京东方科技集团股份有限公司 一种发光器件、显示基板和显示装置
KR20240019325A (ko) * 2021-06-10 2024-02-14 이데미쓰 고산 가부시키가이샤 유기 일렉트로루미네센스 소자, 유기 일렉트로루미네센스 표시 장치 및 전자 기기
WO2024182755A1 (en) * 2023-03-02 2024-09-06 Triad National Security, Llc Electrically excited semiconductor nanocrystal optical-gain devices including optical amplifiers, lasers, and laser diodes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013539584A (ja) * 2010-07-26 2013-10-24 メルク パテント ゲーエムベーハー 量子ドットおよびホスト

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009526370A (ja) * 2006-02-09 2009-07-16 キユーデイー・ビジヨン・インコーポレーテツド 半導体ナノ結晶およびドープされた有機材料を含む層を含むデバイスおよび方法
US8115382B2 (en) * 2007-09-20 2012-02-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device, comprising controlled carrier transport
KR101995371B1 (ko) * 2008-04-03 2019-07-02 삼성 리서치 아메리카 인코포레이티드 양자점들을 포함하는 발광 소자
WO2009133907A1 (ja) * 2008-04-28 2009-11-05 大日本印刷株式会社 正孔注入輸送層を有するデバイス、及びその製造方法、並びに正孔注入輸送層形成用インク
JP2010254671A (ja) * 2009-03-31 2010-11-11 Semiconductor Energy Lab Co Ltd カルバゾール誘導体、発光素子用材料、発光素子、発光装置、電子機器、及び照明装置
US8389979B2 (en) * 2009-05-29 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, electronic device, and lighting device
FR2957718B1 (fr) * 2010-03-16 2012-04-20 Commissariat Energie Atomique Diode electroluminescente hybride a rendement eleve
KR101274068B1 (ko) * 2010-05-25 2013-06-12 서울대학교산학협력단 양자점 발광 소자 및 이를 이용한 디스플레이
WO2012046560A1 (en) * 2010-10-04 2012-04-12 Semiconductor Energy Laboratory Co., Ltd. Composite material, light-emitting element, light-emitting device, electronic device, and lighting device
JP5839912B2 (ja) * 2011-09-22 2016-01-06 株式会社半導体エネルギー研究所 発光素子、発光装置
US9299942B2 (en) * 2012-03-30 2016-03-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, display device, electronic appliance, and lighting device
WO2014085469A1 (en) * 2012-11-27 2014-06-05 Massachusetts Institute Of Technology Deposition of semiconductor nanocrystals for light emitting devices
GB201306365D0 (en) * 2013-04-09 2013-05-22 Kathirgamanathan Poopathy Heterocyclic compounds and their use in electro-optical or opto-electronic devices
TWI790559B (zh) * 2013-08-09 2023-01-21 日商半導體能源研究所股份有限公司 發光元件、顯示模組、照明模組、發光裝置、顯示裝置、電子裝置、及照明裝置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013539584A (ja) * 2010-07-26 2013-10-24 メルク パテント ゲーエムベーハー 量子ドットおよびホスト

Also Published As

Publication number Publication date
JP2017168420A (ja) 2017-09-21
CN106486607A (zh) 2017-03-08
JP6929625B2 (ja) 2021-09-01
KR20170027305A (ko) 2017-03-09
US20170062749A1 (en) 2017-03-02

Similar Documents

Publication Publication Date Title
CN106486607B (zh) 发光元件、发光装置、电子设备以及照明装置
US11889759B2 (en) Light-emitting element, light-emitting device, electronic device, and lighting device
US20240341112A1 (en) Light-Emitting Device, Display Device, and Electronic Device
US20250151508A1 (en) Light-Emitting Device, Light-Emitting Apparatus, Electronic Device, Display Device, and Lighting Device
US12356791B2 (en) Light-emitting device, electronic device, and lighting device
JP2017038049A (ja) 発光素子、発光装置、電子機器、表示装置及び照明装置
KR102806201B1 (ko) 유기 화합물, 발광 소자, 발광 장치, 전자 기기, 표시 장치 및 조명 장치
KR102626160B1 (ko) 유기 화합물, 발광 소자, 발광 장치, 전자 기기, 표시 장치, 및 조명 장치
TWI842812B (zh) 發光器件、發光裝置、電子裝置及照明設備
CN113785410A (zh) 发光器件、发光装置、电子设备及照明装置
CN113228329A (zh) 发光器件、发光装置、电子设备及照明装置
CN113748529A (zh) 发光器件、发光装置、电子设备及照明装置
JP2018131407A (ja) 発光素子、発光装置、電子機器及び照明装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20210316

CF01 Termination of patent right due to non-payment of annual fee