CN106480497A - The installation method of primary heater in a kind of pulling of crystals production - Google Patents
The installation method of primary heater in a kind of pulling of crystals production Download PDFInfo
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- CN106480497A CN106480497A CN201510530605.6A CN201510530605A CN106480497A CN 106480497 A CN106480497 A CN 106480497A CN 201510530605 A CN201510530605 A CN 201510530605A CN 106480497 A CN106480497 A CN 106480497A
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- primary heater
- electrode
- pulling
- heater
- installation method
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Abstract
The invention discloses a kind of pulling of crystals produce in primary heater installation method, make to be connected in the way of being directly embedded between primary heater and electrode.The contact surface of primary heater and electrode is processed into straight wall shape, one upper lateral part of the wherein contact surface of primary heater processes ramp structure, in electrode inner surface, the top of respective side also processes ramp structure, after the two assembling, using primary heater self gravitation, the outer surface of primary heater is tightly fitted with electrode inner surface.Improve the installation effectiveness of primary heater and structural stability during pulling of crystals produces.In the method for the present invention, primary heater is connected with electrode, dismantles simple and effective, and heater members structure is more stable, is difficult to strike sparks.
Description
Technical field
The present invention relates to a kind of pulling of crystals produce in primary heater installation method, belong to silicon single crystal technology of preparing neck
Domain.
Background technology
Single crystal silicon semiconductor major part is manufactured using vertical pulling method, that is, cut krousky (Czochralski) method.
In the method, polysilicon is heated by graphite heater, after fusing, melt is carried out with certain cooling, assigns
Give degree of supercooling, using the seed crystal of particular crystal orientation, stretch into silicon melt.By control system, adjust melt temperature and
The speed that seed crystal rises, the diameter of crystal is amplified to required aimed dia, then by adjusting rate of crystalline growth
And signaling system, realize the permanent Diameter growth of crystal.When crystal growth is to required weight or length, improve crystal
The speed of growth and melt is carried out mend temperature so that the diameter of silicon single crystal body is gradually reduced, formed a rounding wimble structure,
Finally silicon melt level is departed from point-like, complete crystal growth.
In pulling of crystals growth thermal field, primary heater is connected with electrode, after electrode connects DC source, main heating
Device produces heat.In growth course, the fusing of polycrystal material needs to absorb heat silicon single crystal, and silicon single crystal is isometrical, finishes up
Journey needs to mend temperature, and in the growth of czochralski silicon monocrystal, most of process is endothermic process.
As shown in Figure 1, 2, between primary heater and electrode, existing connected mode is the contact of the two connecting portion
Face is arc-shaped, and is attached with graphite screw.This connected mode is difficult to mount and dismount, and is using
The phenomenon of sparking is easily produced in journey.
Content of the invention
It is an object of the invention to provide a kind of pulling of crystals produce in primary heater installation method, to improve vertical pulling
The installation effectiveness of primary heater and structural stability in monocrystalline production.
For achieving the above object, the present invention takes technical scheme below：
In a kind of pulling of crystals production, the installation method of primary heater, makes between primary heater and electrode to be directly embedded into
Mode connect.
Specifically, the contact surface of primary heater and electrode is processed into straight wall shape, the wherein contact surface of primary heater
A upper lateral part process ramp structure, in electrode inner surface, the top of respective side also processes ramp structure, two
After person's assembling, using primary heater self gravitation, the outer surface of primary heater is tightly fitted with electrode inner surface, plus
It is difficult in thermal process to strike sparks compared with conventional heater.
It is an advantage of the current invention that：
In the method for the present invention, primary heater is connected with electrode, dismantles simple and effective, and heater members structure is more stable,
It is difficult to strike sparks.
Brief description
Fig. 1 is the front view (Fig. 1 a) and profile (Fig. 1 b) that traditional primary heater is divided with electrode connecting portion.
Fig. 2 is front view (Fig. 2 a) and the profile (Fig. 2 b) of traditional electrode.
Fig. 3 is the front view (Fig. 3 a) and profile (Fig. 3 b) that the primary heater in the present invention is divided with electrode connecting portion.
Fig. 4 is the front view (Fig. 4 a) of electrode and profile (Fig. 4 b) in the present invention.
Specific embodiment
The present invention will be further described below in conjunction with the accompanying drawings, but is not meant to the limit to the scope of the present invention
System.
As shown in Figure 3, Figure 4, the contact surface of primary heater and electrode is processed into straight wall shape, primary heater end face
A1 top (at A in Fig. 3 a) and electrode inner surface b1 top (at B in Fig. 4 a) beveling structure, with
Horizontal plane is at an angle, after the two assembling, using primary heater self gravitation, in the outer surface of primary heater and electrode
Tightly fit in surface.Primary heater installation effectiveness improves, dismounting facility, and compared with conventional heater, uses
Effect is good, is difficult to strike sparks.
Claims (2)
1. during a kind of pulling of crystals produces, the installation method of primary heater is it is characterised in that make primary heater and electricity
Connected in the way of being directly embedded between pole.
2. during pulling of crystals according to claim 1 produces primary heater installation method it is characterised in that
The contact surface of primary heater and electrode is processed into straight wall shape, a upper lateral part of the wherein contact surface of primary heater adds
Work goes out ramp structure, and in electrode inner surface, the top of respective side also processes ramp structure, after the two assembling, profit
Use primary heater self gravitation, the outer surface of primary heater is tightly fitted with electrode inner surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510530605.6A CN106480497B (en) | 2015-08-26 | 2015-08-26 | The installation method of primary heater in a kind of production of pulling of crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510530605.6A CN106480497B (en) | 2015-08-26 | 2015-08-26 | The installation method of primary heater in a kind of production of pulling of crystals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106480497A true CN106480497A (en) | 2017-03-08 |
| CN106480497B CN106480497B (en) | 2019-06-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510530605.6A Active CN106480497B (en) | 2015-08-26 | 2015-08-26 | The installation method of primary heater in a kind of production of pulling of crystals |
Country Status (1)
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| CN (1) | CN106480497B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2666932Y (en) * | 2003-12-22 | 2004-12-29 | 中国电子科技集团公司第四十六研究所 | Apparatus for compound semiconductor material polycrystal synthetization |
| CN201305648Y (en) * | 2008-12-05 | 2009-09-09 | 浙江舒奇蒙能源科技有限公司 | Graphite heater |
| CN202090104U (en) * | 2011-05-12 | 2011-12-28 | 石金精密科技（深圳）有限公司 | Conductive connecting component and polysilicon ingot furnace lateral-side heating device |
| CN103001010A (en) * | 2012-08-24 | 2013-03-27 | 苏州工业园区杰士通真空技术有限公司 | Heating electrode connection structure |
| CN103002605A (en) * | 2012-12-05 | 2013-03-27 | 湖南省鑫源新材料股份有限公司 | Connecting assembly of electrode and heater of high-temperature resistance furnace |
| CN203307478U (en) * | 2013-05-20 | 2013-11-27 | 洛阳单晶硅有限责任公司 | Self-weight type heater |
-
2015
- 2015-08-26 CN CN201510530605.6A patent/CN106480497B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2666932Y (en) * | 2003-12-22 | 2004-12-29 | 中国电子科技集团公司第四十六研究所 | Apparatus for compound semiconductor material polycrystal synthetization |
| CN201305648Y (en) * | 2008-12-05 | 2009-09-09 | 浙江舒奇蒙能源科技有限公司 | Graphite heater |
| CN202090104U (en) * | 2011-05-12 | 2011-12-28 | 石金精密科技（深圳）有限公司 | Conductive connecting component and polysilicon ingot furnace lateral-side heating device |
| CN103001010A (en) * | 2012-08-24 | 2013-03-27 | 苏州工业园区杰士通真空技术有限公司 | Heating electrode connection structure |
| CN103002605A (en) * | 2012-12-05 | 2013-03-27 | 湖南省鑫源新材料股份有限公司 | Connecting assembly of electrode and heater of high-temperature resistance furnace |
| CN203307478U (en) * | 2013-05-20 | 2013-11-27 | 洛阳单晶硅有限责任公司 | Self-weight type heater |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106480497B (en) | 2019-06-14 |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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