CN106471606B - 利用沉积前测量的研磨 - Google Patents

利用沉积前测量的研磨 Download PDF

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Publication number
CN106471606B
CN106471606B CN201580032549.1A CN201580032549A CN106471606B CN 106471606 B CN106471606 B CN 106471606B CN 201580032549 A CN201580032549 A CN 201580032549A CN 106471606 B CN106471606 B CN 106471606B
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China
Prior art keywords
substrate
layer
measurement
measurements
deposition
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Active
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CN201580032549.1A
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English (en)
Chinese (zh)
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CN106471606A (zh
Inventor
T·北岛
J·D·戴维
J·钱
关根健人
G·C·梁
S·P·休伊
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Priority claimed from US14/333,395 external-priority patent/US9811077B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN106471606A publication Critical patent/CN106471606A/zh
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Publication of CN106471606B publication Critical patent/CN106471606B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201580032549.1A 2014-07-16 2015-07-09 利用沉积前测量的研磨 Active CN106471606B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US14/333,395 US9811077B2 (en) 2014-07-16 2014-07-16 Polishing with pre deposition spectrum
US14/333,395 2014-07-16
US201462026306P 2014-07-18 2014-07-18
US62/026,306 2014-07-18
PCT/US2015/039780 WO2016010821A1 (en) 2014-07-16 2015-07-09 Polishing with measurement prior to deposition

Publications (2)

Publication Number Publication Date
CN106471606A CN106471606A (zh) 2017-03-01
CN106471606B true CN106471606B (zh) 2021-07-27

Family

ID=55078925

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580032549.1A Active CN106471606B (zh) 2014-07-16 2015-07-09 利用沉积前测量的研磨

Country Status (5)

Country Link
JP (1) JP6666897B2 (enExample)
KR (1) KR102534756B1 (enExample)
CN (1) CN106471606B (enExample)
TW (1) TWI726847B (enExample)
WO (1) WO2016010821A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7023062B2 (ja) 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
WO2019027738A1 (en) * 2017-08-04 2019-02-07 Micromaterials Llc ENHANCED METAL CONTACT LANDING STRUCTURE
KR102614427B1 (ko) * 2018-09-19 2023-12-18 삼성전자주식회사 반도체 소자 및 그 형성 방법
US11862520B2 (en) 2021-02-03 2024-01-02 Applied Materials, Inc. Systems and methods for predicting film thickness of individual layers using virtual metrology

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US20010036738A1 (en) * 1998-06-30 2001-11-01 Masanobu Hatanaka Semiconductor device manufacturing method
US20040048480A1 (en) * 2002-09-10 2004-03-11 Shao-Yu Ting Method of planarization of semiconductor devices
US20040058543A1 (en) * 2000-03-10 2004-03-25 Subhas Bothra Method of using films having optimized optical properties for chemical mechanical polishing endpoint detection
US20120274932A1 (en) * 2011-04-26 2012-11-01 Jeffrey Drue David Polishing with copper spectrum
CN102856230A (zh) * 2012-10-09 2013-01-02 深圳市华星光电技术有限公司 Tft基板接触孔蚀刻制程监控方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4460659B2 (ja) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
US6593238B1 (en) * 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
US8751033B2 (en) * 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
JP5728239B2 (ja) * 2010-03-02 2015-06-03 株式会社荏原製作所 研磨監視方法、研磨方法、研磨監視装置、および研磨装置
WO2011139571A2 (en) * 2010-05-05 2011-11-10 Applied Materials, Inc. Dynamically or adaptively tracking spectrum features for endpoint detection
TWI521625B (zh) * 2010-07-30 2016-02-11 應用材料股份有限公司 使用光譜監測來偵測層級清除

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
US20010036738A1 (en) * 1998-06-30 2001-11-01 Masanobu Hatanaka Semiconductor device manufacturing method
US20040058543A1 (en) * 2000-03-10 2004-03-25 Subhas Bothra Method of using films having optimized optical properties for chemical mechanical polishing endpoint detection
US20040048480A1 (en) * 2002-09-10 2004-03-11 Shao-Yu Ting Method of planarization of semiconductor devices
US20120274932A1 (en) * 2011-04-26 2012-11-01 Jeffrey Drue David Polishing with copper spectrum
CN102856230A (zh) * 2012-10-09 2013-01-02 深圳市华星光电技术有限公司 Tft基板接触孔蚀刻制程监控方法

Also Published As

Publication number Publication date
TW201611951A (en) 2016-04-01
JP2017521866A (ja) 2017-08-03
JP6666897B2 (ja) 2020-03-18
CN106471606A (zh) 2017-03-01
WO2016010821A1 (en) 2016-01-21
KR102534756B1 (ko) 2023-05-18
TWI726847B (zh) 2021-05-11
KR20170031225A (ko) 2017-03-20

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