TWI726847B - 製造基板的方法,及其電腦程式產品和積體電路製造系統 - Google Patents

製造基板的方法,及其電腦程式產品和積體電路製造系統 Download PDF

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Publication number
TWI726847B
TWI726847B TW104122752A TW104122752A TWI726847B TW I726847 B TWI726847 B TW I726847B TW 104122752 A TW104122752 A TW 104122752A TW 104122752 A TW104122752 A TW 104122752A TW I726847 B TWI726847 B TW I726847B
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TW
Taiwan
Prior art keywords
layer
substrate
measurement
spectrum
base
Prior art date
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TW104122752A
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English (en)
Chinese (zh)
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TW201611951A (en
Inventor
北島友彦
大衛傑弗瑞杜魯
錢隽
關根健人
梁家崙C
惠西德尼P
Original Assignee
美商應用材料股份有限公司
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Publication date
Priority claimed from US14/333,395 external-priority patent/US9811077B2/en
Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201611951A publication Critical patent/TW201611951A/zh
Application granted granted Critical
Publication of TWI726847B publication Critical patent/TWI726847B/zh

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/005Control means for lapping machines or devices
    • B24B37/013Devices or means for detecting lapping completion
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/10Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means
    • B24B49/105Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving electrical means using eddy currents
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/31051Planarisation of the insulating layers
    • H01L21/31053Planarisation of the insulating layers involving a dielectric removal step
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW104122752A 2014-07-16 2015-07-14 製造基板的方法,及其電腦程式產品和積體電路製造系統 TWI726847B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US14/333,395 US9811077B2 (en) 2014-07-16 2014-07-16 Polishing with pre deposition spectrum
US14/333,395 2014-07-16
US201462026306P 2014-07-18 2014-07-18
US62/026,306 2014-07-18

Publications (2)

Publication Number Publication Date
TW201611951A TW201611951A (en) 2016-04-01
TWI726847B true TWI726847B (zh) 2021-05-11

Family

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Family Applications (1)

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TW104122752A TWI726847B (zh) 2014-07-16 2015-07-14 製造基板的方法,及其電腦程式產品和積體電路製造系統

Country Status (5)

Country Link
JP (1) JP6666897B2 (enExample)
KR (1) KR102534756B1 (enExample)
CN (1) CN106471606B (enExample)
TW (1) TWI726847B (enExample)
WO (1) WO2016010821A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7023062B2 (ja) 2017-07-24 2022-02-21 株式会社荏原製作所 基板研磨装置及び方法
WO2019027738A1 (en) * 2017-08-04 2019-02-07 Micromaterials Llc ENHANCED METAL CONTACT LANDING STRUCTURE
KR102614427B1 (ko) * 2018-09-19 2023-12-18 삼성전자주식회사 반도체 소자 및 그 형성 방법
US11862520B2 (en) 2021-02-03 2024-01-02 Applied Materials, Inc. Systems and methods for predicting film thickness of individual layers using virtual metrology

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
TW201218292A (en) * 2010-07-30 2012-05-01 Applied Materials Inc Detection of layer clearing using spectral monitoring
US20120274932A1 (en) * 2011-04-26 2012-11-01 Jeffrey Drue David Polishing with copper spectrum

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Publication number Priority date Publication date Assignee Title
JP4460659B2 (ja) * 1997-10-22 2010-05-12 株式会社ルネサステクノロジ 薄膜の膜厚計測方法及びその装置並びにそれを用いた薄膜デバイスの製造方法及びその製造装置
US6326309B2 (en) * 1998-06-30 2001-12-04 Fujitsu Limited Semiconductor device manufacturing method
US6916525B2 (en) * 2000-03-10 2005-07-12 Koninklijke Philips Electronics N.V. Method of using films having optimized optical properties for chemical mechanical polishing endpoint detection
US6593238B1 (en) * 2000-11-27 2003-07-15 Motorola, Inc. Method for determining an endpoint and semiconductor wafer
US6908361B2 (en) * 2002-09-10 2005-06-21 Winbond Electronics Corporation Method of planarization of semiconductor devices
US8751033B2 (en) * 2008-11-14 2014-06-10 Applied Materials, Inc. Adaptive tracking spectrum features for endpoint detection
JP5728239B2 (ja) * 2010-03-02 2015-06-03 株式会社荏原製作所 研磨監視方法、研磨方法、研磨監視装置、および研磨装置
WO2011139571A2 (en) * 2010-05-05 2011-11-10 Applied Materials, Inc. Dynamically or adaptively tracking spectrum features for endpoint detection
CN102856230B (zh) * 2012-10-09 2015-02-04 深圳市华星光电技术有限公司 Tft基板接触孔蚀刻制程监控方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6271047B1 (en) * 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
TW201218292A (en) * 2010-07-30 2012-05-01 Applied Materials Inc Detection of layer clearing using spectral monitoring
US20120274932A1 (en) * 2011-04-26 2012-11-01 Jeffrey Drue David Polishing with copper spectrum

Also Published As

Publication number Publication date
CN106471606B (zh) 2021-07-27
TW201611951A (en) 2016-04-01
JP2017521866A (ja) 2017-08-03
JP6666897B2 (ja) 2020-03-18
CN106471606A (zh) 2017-03-01
WO2016010821A1 (en) 2016-01-21
KR102534756B1 (ko) 2023-05-18
KR20170031225A (ko) 2017-03-20

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