CN106469709B - Ceramic substrate structure for IC integrated package - Google Patents
Ceramic substrate structure for IC integrated package Download PDFInfo
- Publication number
- CN106469709B CN106469709B CN201610767911.6A CN201610767911A CN106469709B CN 106469709 B CN106469709 B CN 106469709B CN 201610767911 A CN201610767911 A CN 201610767911A CN 106469709 B CN106469709 B CN 106469709B
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- China
- Prior art keywords
- placing area
- led light
- substrate
- chip
- ceramic substrate
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- 239000000758 substrate Substances 0.000 title claims abstract description 34
- 239000000919 ceramic Substances 0.000 title claims abstract description 19
- 238000005530 etching Methods 0.000 claims description 18
- 238000003466 welding Methods 0.000 claims description 14
- 238000005070 sampling Methods 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 238000009434 installation Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000004020 luminiscence type Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011049 pearl Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011324 bead Substances 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 241001465382 Physalis alkekengi Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Geometry (AREA)
- Led Device Packages (AREA)
Abstract
The invention belongs to the technical field of IC chip packaging, and particularly relates to a ceramic substrate structure used for IC integrated packaging. The invention has the beneficial effects that: reasonable in design can be applicable to multiple wattage, and the effectual different LED lamp pearl wattages of solution installation need the supporting condition that leads to different ceramic substrate, reaches reasonable high-efficient unified purpose, uses and installs simple and conveniently.
Description
Technical Field
The utility model belongs to the technical field of the IC chip encapsulation, especially, relate to ceramic substrate structure that IC integrated package used.
Background
COB is an abbreviation of Chip On Board, namely a Chip On Board device, the technological process comprises the steps of covering a silicon Chip mounting point On the surface of a substrate with heat-conducting epoxy resin (generally, epoxy resin doped with silver particles), directly mounting the silicon Chip On the surface of the substrate, carrying out heat treatment until the silicon Chip is firmly fixed On the substrate, and then directly establishing electrical connection between the silicon Chip and the substrate by using a wire bonding method; traditional LED lamp pearl COB product is ripe day by day, but along with the customer requires reduce cost to the COB product, the volume dwindles, and high conversion efficiency has gradually appeared the novel LED lamp pearl of the integrated encapsulation of novel IC that packs IC chip and LED together.
But the product has poor adaptability, is only suitable for wattage of a single specification, and when the wattage of the designed LED lamp bead is changed, the ceramic substrate needs to be designed and replaced, thereby causing resource waste.
SUMMERY OF THE UTILITY MODEL
For the above-mentioned problem that will solve, to above problem, the utility model provides a ceramic substrate structure that IC integrated package used can be applicable to multiple wattage, and effectual solution reaches reasonable high-efficient unified purpose because the wattage is different to lead to the condition of multiple ceramic substrate.
The technical scheme of the utility model: ceramic substrate structure that IC integrated package used, including base plate, etching circuit, LED luminescence chip place the district, drive chip place the district, component bonding places the district, contact point and power, its characterized in that the base plate embeds the etching circuit, LED luminescence chip place the district, drive chip place the district, component bonding places the district, contact point and power all set up on the base plate, LED luminescence chip places and places a plurality of LED luminescence chips in the district, drive chip places the district and places drive chip, the power passes through the bridge rectifier and is connected with drive chip through the etching circuit, LED luminescence chip places and puts the district and puts the lead-through circuit district outward, component bonding places the district for a plurality of, every the periphery that welds the district and places sets up the contact point, the etching circuit communicates the component bonding places the district, the etching line collecting area is connected with a ground wire.
The LED light-emitting module is characterized in that the element welding placing area and the contact points are all provided with silver coatings, the silver coatings are 0.1-0.5mm, the LED light-emitting chips are placed in 10-18W of the LED light-emitting chips placed in the LED light-emitting chip placing area, the element welding placing area is used for placing elements, the elements are connected with the driving chip, and the substrate is a ceramic substrate.
the size of the substrate is 30mm x30mm, the components and parts are electric capacity and resistance, the resistance package expands sampling resistor, adjusting resistor and external resistance, sampling resistor is 2.0-4.0 megaohm, adjusting resistor is 10-20 kiloohm, external resistance is 80-200 kiloohm.
The utility model has the advantages that: reasonable in design can be applicable to multiple wattage, and the effectual different LED lamp pearl wattages of solution installation need the supporting condition that leads to different ceramic substrate, reaches reasonable high-efficient unified purpose, uses and installs simple and conveniently.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
In the figure, 1, a substrate, 2, an etching circuit, 3, an LED light-emitting chip placing area, 4, a driving chip placing area, 5, an element welding placing area, 6, a contact point, 7, an LED light-emitting chip, 8, a driving chip, 9, a conducting circuit area, 10, an etching circuit gathering area, 11 and a power supply.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings.
Ceramic substrate structure that IC integrated package used, which comprises a substrate, the etching circuit, LED sends out light chip and places the district, driver chip places the district, the district is placed in the component bonding, contact point and power, the built-in etching circuit of base plate, LED sends out light chip and places the district, driver chip places the district, the district is placed in the component bonding, contact point and power all set up on the base plate, LED sends out light chip places and places a plurality of LED and sends out light chip in the district, driver chip places the district and places driver chip, the power passes through the bridge rectifier and is connected with driver chip through the etching circuit, LED sends out light chip and places the district and set up the lead-through circuit district outward, the district is placed in the component bonding is a plurality of, every welding places the periphery in district and sets up the contact point, etching.
Silver coatings are arranged on the element welding placing area and the contact points, the silver coatings are 0.1-0.5mm, 10-18W of a plurality of LED light-emitting chips are placed in the LED light-emitting chip placing area, elements are placed in the element welding placing area, the elements are connected with the driving chips, and the substrate is a ceramic substrate.
The size of the substrate is 30mm x30mm, the components and parts are electric capacity and resistance, the resistance package expands sampling resistor, adjusting resistor and external resistance, sampling resistor is 2.0-4.0 megaohm, adjusting resistor is 10-20 kiloohm, external resistance is 80-200 kiloohm.
Use example: all components of an external power supply used in the traditional sense and an LED luminous body are designed on a plane, the LED luminous body consists of a plurality of LED luminous chips, an etching circuit is arranged in a ceramic substrate, the size of the ceramic substrate is 30mm x30mm, the size of the circuit design solves the problem of heat dissipation of current in the transmission process to the maximum extent, the number of the LED luminous chips placed in an LED luminous chip placement area is 10-18W, the LED luminous chips are adjusted according to the requirements of customers, the maximum 18W can be achieved according to the requirements of the customers, and meanwhile, the periphery of each component placed in an element welding placement area is provided with specially designed contact points,
The parameters of each component can be known at any time in the lighting process of the lamp bead, the working state of the lamp bead can be well known, the components to be measured are capacitors and resistors, the resistors comprise sampling resistors and external resistors, the sampling resistors R1, R2 and R3 are 2.0-4.0 megaohms, the adjusting resistor R4 is 10-20 kiloohms, and the external resistor Rset of the sampling resistor is 80-200 kiloohms, so that the optimal working condition of each component can be adjusted and determined according to the parameters measured by a contact point when the LED light-emitting chip works.
Compared with the prior art, this technical scheme combines IC chip through independently developing the ceramic substrate of this size of design on the basis of traditional COB encapsulation, designs the circuit of the size of this ceramic substrate and inside etching for the lamps and lanterns external dimension of application end design is more frivolous, and beautifully changes, makes its wattage of being suitable for simultaneously wider, has realized that a masterplate can be applied to many money lamp pearls, has practiced thrift manufacturing cost.
The above detailed description is for one embodiment of the present invention, but the above description is only for the preferred embodiment of the present invention, and should not be considered as limiting the scope of the present invention. All the equivalent changes and improvements made according to the application scope of the present invention should still fall within the patent coverage of the present invention.
Claims (1)
- The ceramic substrate structure for IC integrated package comprises a substrate, an etching circuit, an LED light-emitting chip placing area, a drive chip placing area, an element welding placing area, contact points and a power supply, and is characterized in that the etching circuit is arranged in the substrate, the LED light-emitting chip placing area, the drive chip placing area, the element welding placing area, the contact points and the power supply are all arranged on the substrate, a plurality of LED light-emitting chips are placed in the LED light-emitting chip placing area, the drive chip placing area is placed with the drive chip, the power supply is connected with the drive chip through an etching circuit by a bridge rectifier, a conducting circuit area is arranged outside the LED light-emitting chip placing area, the element welding placing area is multiple, the periphery of each element welding placing area is provided with the contact points, and the etching circuit is communicated with the element welding placing area, the etching line collecting area is connected with a ground wire;Silver coatings are arranged on the element welding placing area and the contact points, the silver coatings are 0.1-0.5mm, a plurality of LED light-emitting chips are placed in the LED light-emitting chip placing area, the number of the LED light-emitting chips is 10-18W, components are placed in the element welding placing area, the components are connected with the driving chips, and the substrate is a ceramic substrate;The size of the substrate is 30mm x30mm, components and parts are electric capacity and resistance, resistance package expands sampling resistance, adjusting resistor and external resistance, sampling resistance is 2.0-4.0 megaohm, adjusting resistor is 10-20 kilo-ohm, external resistance is 80-200 kilo-ohm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610767911.6A CN106469709B (en) | 2016-08-30 | 2016-08-30 | Ceramic substrate structure for IC integrated package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610767911.6A CN106469709B (en) | 2016-08-30 | 2016-08-30 | Ceramic substrate structure for IC integrated package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106469709A CN106469709A (en) | 2017-03-01 |
| CN106469709B true CN106469709B (en) | 2019-12-06 |
Family
ID=58230041
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610767911.6A Active CN106469709B (en) | 2016-08-30 | 2016-08-30 | Ceramic substrate structure for IC integrated package |
Country Status (1)
| Country | Link |
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| CN (1) | CN106469709B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105072776A (en) * | 2015-09-06 | 2015-11-18 | 深圳市源磊科技有限公司 | Integrated COB light source with power drive |
| US9277618B2 (en) * | 2014-06-27 | 2016-03-01 | Bridgelux, Inc. | Monolithic LED chip in an integrated control module with active circuitry |
| CN205480223U (en) * | 2015-12-31 | 2016-08-17 | 深圳市恒达光电子科技有限公司 | High stable pottery COB encapsulation LED lamp |
| CN206134674U (en) * | 2016-08-30 | 2017-04-26 | 天津睿泽科技发展有限公司 | Ceramic substrate structure is used in integrated encapsulation of IC |
-
2016
- 2016-08-30 CN CN201610767911.6A patent/CN106469709B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9277618B2 (en) * | 2014-06-27 | 2016-03-01 | Bridgelux, Inc. | Monolithic LED chip in an integrated control module with active circuitry |
| CN105072776A (en) * | 2015-09-06 | 2015-11-18 | 深圳市源磊科技有限公司 | Integrated COB light source with power drive |
| CN205480223U (en) * | 2015-12-31 | 2016-08-17 | 深圳市恒达光电子科技有限公司 | High stable pottery COB encapsulation LED lamp |
| CN206134674U (en) * | 2016-08-30 | 2017-04-26 | 天津睿泽科技发展有限公司 | Ceramic substrate structure is used in integrated encapsulation of IC |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106469709A (en) | 2017-03-01 |
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