CN106464212B - 用于解耦电路的共模和差分环路带宽调整的装置和方法 - Google Patents

用于解耦电路的共模和差分环路带宽调整的装置和方法 Download PDF

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Publication number
CN106464212B
CN106464212B CN201580026176.7A CN201580026176A CN106464212B CN 106464212 B CN106464212 B CN 106464212B CN 201580026176 A CN201580026176 A CN 201580026176A CN 106464212 B CN106464212 B CN 106464212B
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China
Prior art keywords
circuit
coupled
capacitor
transistor
capacity cell
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CN201580026176.7A
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Chinese (zh)
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CN106464212A (zh
Inventor
孔德睿
S·M·李
M·J·麦克格万
D·塞奥
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/16—Modifications for eliminating interference voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/14—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of neutralising means
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/45—Differential amplifiers
    • H03F3/45071—Differential amplifiers with semiconductor devices only
    • H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
    • H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
    • H03F3/45183—Long tailed pairs
    • H03F3/45188—Non-folded cascode stages

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Analogue/Digital Conversion (AREA)
CN201580026176.7A 2014-05-21 2015-05-07 用于解耦电路的共模和差分环路带宽调整的装置和方法 Active CN106464212B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462001574P 2014-05-21 2014-05-21
US62/001,574 2014-05-21
US14/487,654 US9553573B2 (en) 2014-05-21 2014-09-16 Differential mode bandwidth extension technique with common mode compensation
US14/487,654 2014-09-16
PCT/US2015/029756 WO2015179137A1 (en) 2014-05-21 2015-05-07 Differential mode bandwidth extension technique with common mode compensation

Publications (2)

Publication Number Publication Date
CN106464212A CN106464212A (zh) 2017-02-22
CN106464212B true CN106464212B (zh) 2019-05-03

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CN201580026176.7A Active CN106464212B (zh) 2014-05-21 2015-05-07 用于解耦电路的共模和差分环路带宽调整的装置和方法

Country Status (6)

Country Link
US (1) US9553573B2 (enExample)
EP (1) EP3146628B1 (enExample)
JP (1) JP6625564B2 (enExample)
KR (1) KR20170007297A (enExample)
CN (1) CN106464212B (enExample)
WO (1) WO2015179137A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734958B2 (en) * 2016-08-09 2020-08-04 Mediatek Inc. Low-voltage high-speed receiver
US10594278B2 (en) * 2017-09-06 2020-03-17 Samsung Electronics Co., Ltd. Pole-splitting and feedforward capacitors in common mode feedback of fully differential amplifier
CN111342805B (zh) * 2018-12-18 2023-12-15 天津大学 带阻抗曲线调整模块的滤波器单元、滤波器及电子设备
CN110838675B (zh) * 2019-11-14 2020-09-08 安徽传矽微电子有限公司 一种高速大电流激光器驱动电路及其芯片
US11277108B1 (en) * 2020-12-28 2022-03-15 Analog Devices International Unlimited Company Variable gain amplifiers with cross-couple switching arrangements

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CN1972118A (zh) * 2005-11-24 2007-05-30 苏州中科半导体集成技术研发中心有限公司 高线性高增益的宽带射频低噪声放大器
US20090066431A1 (en) * 2007-09-11 2009-03-12 Samsung Electro-Mechanics Co., Ltd. Wide-band voltage controlled oscillator
US20130033321A1 (en) * 2011-08-03 2013-02-07 Jonas Lindstrand High efficiency power amplifier

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CA2102721C (en) 1993-11-09 1999-05-04 Stephen Paul Webster Differential gain stage for use in a standard bipolar ecl process
JP2000114886A (ja) * 1998-09-29 2000-04-21 Nec Corp Ｍｏｓ逆相増幅回路およびそれを用いたｒｆフロントエンド回路
US6867649B2 (en) * 2002-09-25 2005-03-15 Elantec Semiconductor, Inc. Common-mode and differential-mode compensation for operational amplifier circuits
US7190232B1 (en) 2003-05-14 2007-03-13 Marvell International Ltd. Self-biased active VCO level shifter
US6972624B1 (en) 2003-08-08 2005-12-06 Linear Technology Corporation Low-voltage high dynamic range variable-gain amplifier
US6985036B2 (en) 2003-11-26 2006-01-10 Scintera Networks, Inc. Digitally controlled transconductance cell
US7697915B2 (en) 2004-09-10 2010-04-13 Qualcomm Incorporated Gain boosting RF gain stage with cross-coupled capacitors
US7372335B2 (en) 2005-10-21 2008-05-13 Wilinx, Inc. Wideband circuits and methods
US7612609B1 (en) 2008-05-19 2009-11-03 National Semiconductor Corporation Self-stabilizing differential load circuit with well controlled complex impedance
US8098101B2 (en) 2008-07-08 2012-01-17 Qualcomm, Incorporated Method of achieving high selectivity in receiver RF front-ends
JP5093149B2 (ja) * 2009-02-24 2012-12-05 富士通セミコンダクター株式会社 可変利得増幅器
US8339200B2 (en) * 2010-12-07 2012-12-25 Ati Technologies Ulc Wide-swing telescopic operational amplifier
US8466738B2 (en) 2011-05-10 2013-06-18 Samsung Electro-Mechanics Systems and methods for minimizing phase deviation and/or amplitude modulation (AM)-to-phase modulation (PM) conversion for dynamic range, radio frequency (RF) non-linear amplifiers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1972118A (zh) * 2005-11-24 2007-05-30 苏州中科半导体集成技术研发中心有限公司 高线性高增益的宽带射频低噪声放大器
US20090066431A1 (en) * 2007-09-11 2009-03-12 Samsung Electro-Mechanics Co., Ltd. Wide-band voltage controlled oscillator
US20130033321A1 (en) * 2011-08-03 2013-02-07 Jonas Lindstrand High efficiency power amplifier

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
10-Gb/s Limiting Amplifier and Laser/Modulator Driver in 0.18-μm CMOS Technology;Sherif Galal等;《IEEE JOURNAL OF SOLID-STATE CIRCUITS》;20031231;第2138-2146页 *
A 0.8 V quasi-floating-gate fully differential CMOS op-amp with positive feedback;Thawatchai Thongleam等;《The 8th Electrical Engineering/ Electronics, Computer, Telecommunications and Information Technology (ECTI) Association of Thailand - Conference 2011》;20111231;第98-101页 *

Also Published As

Publication number Publication date
WO2015179137A1 (en) 2015-11-26
JP6625564B2 (ja) 2019-12-25
JP2017520978A (ja) 2017-07-27
KR20170007297A (ko) 2017-01-18
EP3146628A1 (en) 2017-03-29
US9553573B2 (en) 2017-01-24
EP3146628B1 (en) 2020-01-01
US20150341025A1 (en) 2015-11-26
CN106464212A (zh) 2017-02-22

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