CN106450803B - A kind of CMOS integrates the Terahertz superhet quadrature detection array in source - Google Patents
A kind of CMOS integrates the Terahertz superhet quadrature detection array in source Download PDFInfo
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Abstract
The invention discloses the Terahertz superhet quadrature detection arrays that a kind of CMOS integrates source.The array is based on CMOS solid-state circuit superhet and detects THz wave principle, establishes all phase, fully integrated, highly sensitive IQ mixing all phase detection mechanism and method.Active distributed multiphase orthogonal coupling transformer theory and design method are explored, constructs highly sensitive single-chip integration detection system, and realize in CMOS chip around Key Circuits modules such as radiation ring, orthogonal coupling transformer, frequency mixer, oscillators.Detector realizes 2 × 2 detector array column structures that on piece integrates source, voltage input is radiated from chip back, detector receives signal in the front of chip, effectively increase being isolated for source and detector, solve the problems, such as influencing each other between source and detector, and the device can be realized the acquisition of 0~360 ° of all phase information, realize the internal structure 3D imaging of testee.
Description
Technical field
The invention belongs to terahertz imagings and microelectronics technology, and in particular to a kind of terahertz that source is integrated based on CMOS
The hereby design of superhet quadrature detector device.
Background technique
THz wave (THz) signal frequency range is 0.1THz-10THz, and signal wavelength is in 30 μm of -3mm ranges.Terahertz
Wave penetrability is good, and nonpolar opaque material can be imaged, and can get contrast more higher than X-ray.
The research of terahertz detector is broadly divided into optical means and solidstate electronics method.The building of traditional optical method
Terahertz detector is bulky, with high costs, and various limitations make it difficult to popularize in application market.Based on MOSFET's
The research and development of direct conversion detector is rapid, and MOSFET is to the response frequency of THz wave it is verified that can reach at present
4.3THz surrounds how to improve sensitivity and the expansion of detection imaging speed to the research of MOSFET detector.But it is realized in function
On, direct self-mixing mode itself is only capable of obtaining the strength information of terahertz emission, cannot directly carry out the detection of phase information.
However, phase information has very important significance in THz wave detection.In particular, 0~360 ° of all phase information obtains
It takes, can not only greatly improve detector sensitivity and detection accuracy, realize 3D imaging, and the vibration of reflection molecule can be constructed
The spatial distribution of the substance dielectric functions of dynamic model formula and intermolecular interaction force attribute, this is to material characteristics such as agricultural product
Detection have a very important significance.This is also terahertz time-domain spectroscopy imaging system although its is at high price, because of its spy
Measurement information is complete, still the scientific research institutions such as agricultural, medical treatment terahertz detection research in the highest flight the reason of.
It studies in microelectronics solid-state circuit terahertz detector with realization, superhet detector is than direct conversion detector
With higher sensitivity, noiseproof feature also improves about 2 orders of magnitude, this is provided by force for the detection of Terahertz small-signal
Sound assurance, it is often more important that, superhet detection mode can obtain the amplitude and phase information of signal simultaneously.With conventional source
It is compared with detector separated structure, on piece integrates 2 × 2 detector array column structures in source, and voltage input is radiated from chip back, detection
Device receives signal in the front of chip, effectively increases being isolated for source and detector.It solves mutual between source and detector
Influence problem.
Summary of the invention
The purpose of the present invention is to provide the Terahertz superhet quadrature detector devices that a kind of CMOS integrates source.Mainly answer
For the portable accurate detection to the fine field such as substance inside quality parameter, the acquisition of 0~360 ° of all phase information is realized, it is real
The internal structure 3D imaging of existing testee, and the vibration mode for reflecting molecule and intermolecular interaction force can be constructed
The spatial distribution of the substance dielectric functions of attribute, has a very important significance the detection of substance characteristics.
It is low for traditional cmos direct conversion detector sensitivity, source and detector separation, and all phase cannot be detected
Defect, the technical solution adopted by the present invention to solve the technical problems are:
A kind of CMOS integrates the Terahertz superhet quadrature detection array in source, including four annular on-chip antennas, four groups of IQ
It is mixed probe unit and forms 2 × 2 arrays and distributed multi-channel orthogonal signalling source；Described four annular on-chip antennas lead to respectively
Four groups of IQ mixing probe units are crossed to be connected with distributed multi-channel orthogonal signalling source；Distributed multi-channel orthogonal signalling source is used for while producing
Raw Terahertz directed radiation wave beam and multichannel orthogonal signalling；By the road I and the road Q generated after four groups of IQ mixing probe unit mixing
Intermediate-freuqncy signal can be obtained the amplitude and phase information of measured signal after amplifying filtering sampling；Four annular on-chip antennas are used
In reception terahertz signal.
Further, described four annular on-chip antennas use standard CMOS process, which includes at least four layers of metal, should
Antenna is made of metal layer Metal6.
Further, distributed multi-channel orthogonal signalling source is the power combing day that Terahertz on piece is embedded in multiple-path coupler
Line, bottom-up successively includes ground level, coupling coil, isometric intersection double loop antenna；
The power combing antenna uses standard CMOS process, which includes at least four layers of metal；Ground level uses most bottom
Layer metal Metal1；Coupling coil uses second layer metal Metal2；The structure of the double loop antenna of isometric intersection uses top
Metal layer Metal4 is subject to processing the limitation of technique, and coupling part needs to use third layer metal layer Metal3, and uses
Via hole is attached；
Be provided on the ground level annular ground level fluting 7, ground level fluting 7 by ground level be divided into ground level A6 and
Circular ground level B8, circular ground level B8 are located at the center of the ground level fluting 7 of annular；Ground level A6 is around ground level
One week of fluting 7 is uniformly distributed raised A33, protrusion B34, protrusion C35 and the protrusion D36 protruded into inside ground level fluting 7, on
It states protrusion to be grounded for signal injection end, be formed into a loop between antenna and ground level A6；Ground level B8 connects for coupling coil
Ground uses；
The coupling coil is with loop coil jaggy, and indentation, there draws two lines and connects external operating circuit, is used for
Carry out the output of four road differential signals；The coupling coil includes coupling coil A13, coupling coil B14, coupling coil C15 and coupling
Zygonema circle D16；Coupling coil according to difference 90 degree of physical angle and protrude into ground level fluting 7 protrusion differ 45 degree be distributed in
Isometric one week for intersecting double loop antenna, and be located at below isometric intersection double loop antenna；The ground line of the coupling coil A13 passes through
Via hole A9 connection ground level B8；The ground line of coupling coil B14 passes through via hole B10 connection ground level B8；Coupling coil C15's connects
Ground wire passes through via hole C11 connection ground level B8；The ground line of coupling coil D16 passes through via hole D12 connection ground level B8；
The isometric intersection double loop antenna includes cross one another ring A23 and ring B24；The main part of ring A23 and ring B24
Infall positioned at metal layer Metal4, ring A23 and ring B24 is distributed in 180 degree, due to being limited by technique, the infall
It is respectively equipped with auxiliary connection A17 and auxiliary connection B18, and connection A17 and auxiliary connection B18 is assisted to be respectively positioned on metal layer
Metal3, wherein auxiliary connection B18 is connected with via hole H22 with the main part of ring A23 by via hole G21；Auxiliary connection A17 is logical
Via hole E19 is connected with via hole F20 with the main part of ring B24；The perimeter of ring A and ring B are equal, are the wavelength of fundamental signal.
Further, the protrusion A33 is equipped with signal injection positive ends A25, signal injects negative polarity end A29, and believes
Number injection positive ends A25 meets ring A23, is 270 degree of fundamental signal for injecting phase；Signal injection negative polarity end A29 connects
Ring B24, the fundamental signal for being 90 degree for Injection Signal, signal injects positive ends A25 and signal injects negative polarity end A29 shape
Differential signal injection port in a pair；
The protrusion B34 is equipped with signal injection positive ends B26, signal injects negative polarity end B30, and signal injection is just
Polar end B26 meets ring A23, the fundamental signal for being 0 degree for injecting phase；Signal injection negative polarity end B30 meets ring B24, is used for
Injection Signal is the fundamental signal of 180 degree, and it is a pair of poor that signal injection positive ends B26 and signal injection negative polarity end B30 are formed
Sub-signal injection port；
The protrusion C35 is equipped with signal injection positive ends C27, signal injects negative polarity end C31, and signal injection is just
Polar end C27 meets ring A23, the fundamental signal for being 90 degree for injecting phase；Signal injection negative polarity end C31 meets ring B24, is used for
It is a pair of poor that the fundamental signal that Injection Signal is 270 degree, signal injection positive ends C27 and signal injection negative polarity end C31 are formed
Sub-signal injection port；
The protrusion D36 is equipped with signal injection positive ends D28, signal injects negative polarity end D32, and signal injection is just
Polar end D28 meets ring A23, for injecting the fundamental signal that phase is 180 degree；Signal injection negative polarity end D32 meets ring B24, uses
It is a pair of poor that the fundamental signal for being 0 degree in Injection Signal, signal injection positive ends D28 and signal injection negative polarity end D32 are formed
Sub-signal injection port.
Further,
The height metal that is equal, and highly being connected by via hole of the via hole A9, via hole B10, via hole C11 and via hole D12
Layer the distance between Metal1 and Metal2 determine that material is copper；
The height auxiliary that is equal, and highly being connected by via hole of the via hole E19, via hole F20, via hole G21 and via hole H22
It connects the distance between A17, auxiliary connection B18 to ring A23, ring B24 and determines that material is copper.
Further,
The diameter of the via hole A9 of the ground line and ground level B8 for connecting coupling coil A13 is coupling coil A13
Ground line width；
The diameter of the via hole B10 of the ground line and ground level B8 for connecting coupling coil B14 is coupling coil B14
Ground line width；
The diameter of the via hole C11 of the ground line and ground level B8 for connecting coupling coil C15 is coupling coil C15
Ground line width；
The diameter of the via hole D12 of the ground line and ground level B8 for connecting coupling coil D16 is coupling coil D16
Ground line width；
The width that the diameter for connecting the via hole E19 for assisting connection A17 and ring B24, via hole F20 is ring B24；
The width that the diameter for connecting the via hole G21 for assisting connection B18 and ring A23, via hole H22 is ring A23.
The invention has the advantages that: the device is based on CMOS solid-state circuit superhet and detects THz wave principle,
Establish all phase, fully integrated, highly sensitive IQ mixing all phase detection mechanism and method.Explore active distributed multiphase orthogonal
Coupling transformer theory and design method construct highly sensitive single-chip integration detection system, and around radiation ring, orthogonal coupling change
The Key Circuits module such as depressor, frequency mixer, oscillator is realized in CMOS chip.Detector realizes 2 × 2 that on piece integrates source
Detector array column structure, voltage input from chip back radiate, detector chip front receive signal, effectively increase source with
The isolation of detector solves the problems, such as influencing each other between source and detector, and the device can be realized 0~360 ° of full phase
The internal structure 3D imaging of testee is realized in the acquisition of position information.
Detailed description of the invention:
Fig. 1 is detector overall structure block diagram in the present invention.
Fig. 2 is IQ phasor diagram in the present invention.
Fig. 3 is standard CMOS process metal layer schematic diagram used in the present invention.
Fig. 4 is schematic structural view of the invention.
Fig. 5 is that signal of the present invention injects schematic diagram.
Fig. 6 is operation schematic diagram of the present invention.
In figure, 6 be ground level A, and 7 slot for ground level, and 8 be ground level B, and 9 be via hole A, and 10 be via hole B, and 11 be via hole
C, 12 be via hole D, and 13 be coupling coil A, and 14 be coupling coil B, and 15 be coupling coil C, and 16 be coupling coil D, and 17 be auxiliary
A is connected, 18 be auxiliary connection B, and 19 be via hole E, and 20 be via hole F, and 21 be via hole G, and 22 be via hole H, and 23 be ring A, and 24 be ring B,
25 inject positive ends A for signal, and 26 inject positive ends B for signal, and 27 inject positive ends C for signal, and 28 infuse for signal
Enter positive ends D, 29 inject negative polarity end A for signal, and 30 inject negative polarity end B for signal, and 31 inject negative polarity end for signal
C, 32 inject negative polarity end D for signal, and 33 be protrusion A, and 34 be protrusion B, and 35 be protrusion C, and 36 be protrusion D.
Specific embodiment:
The working principle of the invention:
Terahertz emission principle: radiation ring and formation mechenism of the quadrature phase transformer under CMOS technology are of the invention
One of main research, multichannel oscillator difference output end is equidistantly connected on coupling becket, if two coupling metals
Current direction on ring on the contrary, then electromagnetic radiation be suppressed, coupling becket has only served the function of filtering；If two coupling gold
The current direction belonged on ring is identical, then electromagnetic radiation is reinforced.If becket perimeter is equal to frequency 2f0Signal wavelength, gold
Belong to the 2f on coupling ring0Signal code is with phase and certain intensity is kept to go in ring back and forth, then polarized wave can be formed, by electromagnetic wave
Energy is radiated in space.The polyphase transformer for generating quadrature phase is the multichannel coupling coil based on radiation ring, coil and spoke
It penetrates loop coupling and generates two paths of differential signals, differential signal respectively enters four 90 ° of orthocouplers being distributed in around coil, most
Four tunnel orthogonal signalling are generated eventually.
Terahertz detection principle: four IQ mixing probe units form surrounding of 2 × 2 array distributions in ring, solid line block diagram
Indicate distributed multi-channel orthogonal signalling source, function is while generating Terahertz directed radiation wave beam and multichannel orthogonal signalling.It visits
It is as shown in Figure 1 to survey device array structure schematic diagram.Orthogonal signalling respectively and from the received terahertz signal of annular on-chip antenna,
Antenna left feeder line connects the road Q of IQ frequency mixer, and feeder line connects the road IQ frequency mixer I and is mixed respectively on the right of antenna, other three groups of days
Line receives terahertz signal and is mixed in the manner described above.The road I of generation and the road Q intermediate-freuqncy signal are after amplification filtering
The amplitude and phase information that measured signal is obtained after being read and be computed by following digital circuit carry out Vector modulation to I/Q signal
I.e. vectogram can get amplitude and phase information, as shown in Figure 2.Voltage controlled oscillator operating frequency in oscillation source is low in Terahertz
Through 5 subharmonic frequency multipliers to distributed multi-channel orthogonal signalling source after holding frequency 100GHz, signal sufficiently to be amplified from buffer amplifier
Middle injection 0.5THz signal.It is orthogonal with transformer that the prevention at radio-frequency port of the frequency mixer of detector with local oscillator port is separately connected antenna
Output end, frequency mixer export orthogonal two paths of signals IFIAnd IFQ。
Terahertz detection system forms 2 × 2 arrays including four annular on-chip antennas, four groups of IQ mixing probe units, with
And the distributed multi-channel orthogonal signalling source that solid box figure indicates；Described four annular on-chip antennas pass through four groups of IQ mixing respectively and visit
Unit is surveyed to be connected with distributed multi-channel orthogonal signalling source；Distributed multi-channel orthogonal signalling source is used for while generating Terahertz orientation spoke
Ejected wave beam and multichannel orthogonal signalling；By the road I generated after four groups of IQ mixing probe unit mixing and the road Q intermediate-freuqncy signal, through putting
It can be obtained the amplitude and phase information of measured signal after big filtering sampling；Four annular on-chip antennas are for receiving Terahertz letter
Number；
IQ mixing probe unit as described in Figure 1 includes the road the Q letter of IQ frequency mixer, the generation of distributed multi-channel orthogonal signalling source
Number, the road the I signal that generates of distributed multi-channel orthogonal signalling source, annular on-chip antenna receives terahertz signal, as figure detector is whole
Shown in body structural block diagram, the road Q of IQ frequency mixer, day are connect in the antenna left feeder line in the distributed multi-channel orthogonal signalling source upper left corner
Feeder line connects the road IQ frequency mixer I on the right of line；Antenna right wing feeder line in the distributed multi-channel orthogonal signalling source upper right corner connects IQ mixing
The road Q of device, antenna left feeder line connect the road I of IQ frequency mixer；Antenna left in the distributed multi-channel orthogonal signalling source lower left corner
Feeder line connects the road Q of IQ frequency mixer, and antenna right wing feeder line connects the road I of IQ frequency mixer；In distributed multi-channel orthogonal signalling source bottom right
The right wing feeder line of the antenna at angle connects the road Q of IQ frequency mixer, and antenna left feeder line connects the road I of IQ frequency mixer, such four distributions
Annular on-chip antenna detect orthogonal signalling that terahertz signal is generated with distributed multi-channel orthogonal signalling source respectively by IQ
Frequency mixer is mixed.It can be by after amplification filtering by the road I generated after the mixing of four IQ frequency mixers and the road Q intermediate-freuqncy signal
Following digital circuit obtains the amplitude and phase information of measured signal after reading and being computed, phase information is as shown in Figure 2.Vibration
The voltage controlled oscillator operating frequency in source is swung in Terahertz frequency range, 100GHz is generated by circuit, the signal of generation is put by buffering
Big device through 5 subharmonic frequency multipliers injects 0.5THz signal into distributed multi-channel orthogonal signalling source after sufficiently amplifying.Composition detection
Four IQ frequency mixers of device are gathered around respectively there are two input port and two-way output port, and input port is rf inputs mouth respectively
And local oscillator input port, output port are intermediate-freuqncy signal I road (IF respectivelyI) and intermediate-freuqncy signal Q road (IFQ).Wherein rf inputs
Mouth is separately connected antenna output end orthogonal with frequency multiplier with local oscillator input port, and frequency mixer exports orthogonal two paths of signals IFIWith
IFQ。
Distributed multi-channel orthogonal signalling source using Terahertz on piece insertion multiple-path coupler power combing antenna, from bottom to
On successively include ground level, coupling coil, isometric intersection double loop antenna；
As shown in figure 3, the power combing antenna uses standard CMOS process, which includes at least four layers of metal；Horizon
Face uses bottom metal Metal1；Coupling coil uses second layer metal Metal2；The structure of the double loop antenna of isometric intersection
Using top metal layer Metal4, it is subject to processing the limitation of technique, coupling part needs to use third layer metal layer
Metal3, and be attached using via hole；
As shown in figure 4, being provided with the ground level fluting 7 of annular on the ground level, ground level is divided by ground level fluting 7
Ground level A6 and circular ground level B8, circular ground level B8 are located at the center of the ground level fluting 7 of annular；Ground level A6 exists
Around ground level fluting one the week of 7, be uniformly distributed protrude into ground level slot raised A33 inside 7, protrusion B34, protrusion C35 and
Raised D36, above-mentioned protrusion are grounded for signal injection end, are formed into a loop between antenna and ground level A6；Ground level B8 is used for
Coupling coil ground plane uses；
The coupling coil is with loop coil jaggy, and indentation, there draws two lines and connects external operating circuit, is used for
Carry out the output of four road differential signals；The coupling coil includes coupling coil A13, coupling coil B14, coupling coil C15 and coupling
Zygonema circle D16；Coupling coil according to difference 90 degree of physical angle and protrude into ground level fluting 7 protrusion differ 45 degree be distributed in
Isometric one week for intersecting double loop antenna, and be located at below isometric intersection double loop antenna；The ground line of the coupling coil A13 passes through
Via hole A9 connection ground level B8；The ground line of coupling coil B14 passes through via hole B10 connection ground level B8；Coupling coil C15's connects
Ground wire passes through via hole C11 connection ground level B8；The ground line of coupling coil D16 passes through via hole D12 connection ground level B8；
As shown in figure 5, the isometric intersection double loop antenna includes cross one another ring A23 and ring B24；Ring A23 and ring B24
Main part be located at the infall of metal layer Metal4, ring A23 and ring B24 and be distributed in 180 degree, due to the limit by technique
System, the infall are respectively equipped with auxiliary connection A17 and auxiliary connection B18, and connection A17 and auxiliary connection B18 is assisted to be respectively positioned on
Metal layer Metal3, wherein auxiliary connection B18 is connected with via hole H22 with the main part of ring A23 by via hole G21；Auxiliary connects
A17 is met to be connected with via hole F20 with the main part of ring B24 by via hole E19；The perimeter of ring A and ring B are equal, are fundamental signal
Wavelength.
Above-mentioned protrusion A33 is equipped with signal injection positive ends A25, signal injects negative polarity end A29, and signal injection is just
Polar end A25 meets ring A23, the fundamental signal for being 270 degree for injecting phase；Signal injection negative polarity end A29 meets ring B24, uses
It is a pair of poor that the fundamental signal for being 90 degree in Injection Signal, signal injection positive ends A25 and signal injection negative polarity end A29 are formed
Sub-signal injection port；The protrusion B34 is equipped with signal injection positive ends B26, signal injects negative polarity end B30, and believes
Number injection positive ends B26 meets ring A23, is 0 degree of fundamental signal for injecting phase；Signal injection negative polarity end B30 connects ring
B24 is the fundamental signal of 180 degree for Injection Signal, and signal injects positive ends B26 and signal injects negative polarity end B30 shape
Differential signal injection port in a pair；The protrusion C35 is equipped with signal injection positive ends C27, signal injects negative polarity end
C31, and signal injection positive ends C27 meets ring A23, the fundamental signal for being 90 degree for injecting phase；Signal injects negative polarity
End C31 meets ring B24, the fundamental signal for being 270 degree for Injection Signal, and signal injects positive ends C27 and signal injects cathode
Property end C31 forms a pair of of differential signal injection port；The protrusion D36 is equipped with signal injection positive ends D28, signal injection
Negative polarity end D32, and signal injection positive ends D28 meets ring A23, for injecting the fundamental signal that phase is 180 degree；Signal note
Enter negative polarity end D32 and meet ring B24, the fundamental signal for being 0 degree for Injection Signal, signal injects positive ends D28 and signal note
Enter negative polarity end D32 and forms a pair of of differential signal injection port.
Above-mentioned coupling coil A13, coupling coil B14, coupling coil C15 and coupling coil D16 length be secondary humorous
The half of wave wavelength.
The height metal that is equal, and highly being connected by via hole of above-mentioned via hole A9, via hole B10, via hole C11 and via hole D12
Layer the distance between Metal1 and Metal2 determine that material is copper；The via hole E19, via hole F20, via hole G21 and via hole H22
Height it is equal, and height is determined by auxiliary connection A17, auxiliary connection B18 to ring A23, the distance between ring B24 of via hole connection
Fixed, material is copper.
The diameter of the via hole A9 of above-mentioned ground line and ground level B8 for connecting coupling coil A13 is coupling coil A13
Ground line width；The diameter of the via hole B10 of the ground line and ground level B8 for connecting coupling coil B14 is coupling
The width of the ground line of coil B14；The via hole C11's of the ground line and ground level B8 for connecting coupling coil C15 is straight
Diameter is the width of the ground line of coupling coil C15；The via hole of the ground line and ground level B8 for being used to connect coupling coil D16
The diameter of D12 is the width of the ground line of coupling coil D16；The via hole E19 for connecting auxiliary connection A17 and ring B24,
The diameter of via hole F20 is the width of ring B24；It is described to be used to connect the via hole G21's, via hole H22 for assisting connection B18 and ring A23
Diameter is the width of ring A23.
The length of above-mentioned auxiliary connection A17 is the diameter three that ring B24 bridges distance, the diameter of via hole E19, via hole F20
The sum of；The length of auxiliary connection B18 is that ring A23 bridges the sum of distance, the diameter three of the diameter of via hole G21, via hole H22, on
State notch length of the main part in metal layer Metal4 that ring B24 bridging distance is ring B24；Ring A23 bridging distance is ring A23
Main part metal layer Metal4 notch length.
As shown in fig. 6, being operation schematic diagram of the invention.Second harmonic is coupled into coil, then exports four tunnel difference
Signal.
The course of work of the power combing antenna of above-mentioned Terahertz on piece insertion multiple-path coupler is as follows:
The power combing antenna of Terahertz on piece insertion coupler uses the structure of stacking to design, it is desirable that used
Standard CMOS process includes at least four layers of metal, is carried out using top metal layer Metal4 and its next layer of metal layer Metal3
The double loop antenna structure of isometric intersection designs, and the width of ring is equal, and the distance between two rings are equal with the width of ring, bicyclic master
Body portion is designed using top layer metallic layer Metal4, and Metal3 carries out the design of auxiliary coupling part.Positioned at metal layer
It the auxiliary coupling part of Metal3 and is attached positioned at the bicyclic main part of metal layer Metal4 by via hole, formed etc.
Length is intersected bicyclic, it is desirable that the length of each ring is the wavelength of fundamental signal.It carries out in metal layer Metal2 with ring jaggy
Shape coil design, the length of coupling coil are the half of two frequency-doubled signal wavelength, and are being equipped with ground connection with indentation, there opposite direction
Line is grounded.Radiation signal is coupled into coupling coil, exports four road differential signals.It is enterprising in bottom metal layer Metal1
The design of row ground level, ground level are used as circuit.The size of slot on antenna and ground level need by ANSYS HFSS into
Row simulation optimization carries out the radiation of Terahertz energy to obtain optimal Terahertz on-chip antenna size.
To sum up, highly sensitive terahertz detection array system is constructed based on superhet IQ mixing is theoretical, multichannel is being just in a distributed manner
Friendship signal source is core, and local oscillation signal needed for providing detector, detector is using IQ mixing structure, the prevention at radio-frequency port of frequency mixer
It is separately connected antenna output end orthogonal with transformer with local oscillator port, frequency mixer exports orthogonal two paths of signals IFIAnd IFo, detection
Device is made of 4 groups of IQ frequency mixers, and is integrated in same chip with THz source, realizes that THz wave is highly sensitive under CMOS technology
Multi information detection imaging breaks through CMOS THz source and is difficult to integrated effective integration with detector and realizes the difficulty of all phase detection
Point, solving the problems, such as THz wave, transmission loss is high in cmos circuitry, output power is low.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ",
The description of " example ", " specific example " or " some examples " etc. means specific features described in conjunction with this embodiment or example, knot
Structure, material or feature are included at least one embodiment or example of the invention.In the present specification, to above-mentioned term
Schematic representation may not refer to the same embodiment or example.Moreover, specific features, structure, material or the spy of description
Point can be combined in any suitable manner in any one or more of the embodiments or examples.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (4)
1. the Terahertz superhet quadrature detection array that a kind of CMOS integrates source, which is characterized in that go up to the sky including four ring segments
Line, four groups of IQ mixing probe units form 2 × 2 arrays and distributed multi-channel orthogonal signalling source；Four ring segments heaven
Line passes through the power combing antenna that distributed multi-channel orthogonal signalling source is Terahertz on piece insertion multiple-path coupler and four groups respectively
IQ mixing probe unit is attached in a particular manner, and which is that the antenna in the distributed multi-channel orthogonal signalling source upper left corner is left
Road feeder line connects the road Q of IQ frequency mixer, and feeder line connects the road IQ frequency mixer I on the right of antenna；In distributed multi-channel orthogonal signalling source upper right
The antenna right wing feeder line at angle connects the road Q of IQ frequency mixer, and antenna left feeder line connects the road I of IQ frequency mixer；Just in distributed multi-channel
The antenna left feeder line in the signal source lower left corner is handed over to connect the road Q of IQ frequency mixer, antenna right wing feeder line connects the road I of IQ frequency mixer；It is in
The right wing feeder line of the antenna in the distributed multi-channel orthogonal signalling source lower right corner connects the road Q of IQ frequency mixer, and it is mixed that antenna left feeder line meets IQ
The road I of frequency device；Distributed multi-channel orthogonal signalling source is used for while generating Terahertz directed radiation wave beam and multichannel orthogonal signalling；By
The road I generated after four groups of IQ mixing probe unit mixing and the road Q intermediate-freuqncy signal, can be obtained tested after amplifying filtering sampling
The amplitude and phase information of signal；Four annular on-chip antennas are for receiving terahertz signal；
Distributed multi-channel orthogonal signalling source is the power combing antenna that Terahertz on piece is embedded in multiple-path coupler, bottom-up
It successively include ground level, coupling coil, isometric intersection double loop antenna；
The power combing antenna uses standard CMOS process, which includes at least four layers of metal；Ground level uses bottom gold
Belong to (1)；Coupling coil uses second layer metal (2)；The structure of the double loop antenna of isometric intersection uses top metal layer (4),
It is subject to processing the limitation of technique, coupling part needs to use third layer metal layer (3), and is attached using via hole；
The ground level fluting (7) of annular is provided on the ground level, ground level is divided into ground level A (6) by ground level fluting (7)
With circular ground level B (8), circular ground level B (8) is located at the center of the ground level fluting (7) of annular；Ground level A (6) exists
Around ground level fluting one the week of (7), it is uniformly distributed and protrudes into raised A (33) inside ground level fluting (7), protrusion B (34), convex
C (35) and protrusion D (36) are played, raised A (33), protrusion B (34), protrusion C (35) and protrusion D (36) are for signal injection termination
Ground is formed into a loop between antenna and ground level A (6)；Ground level B (8) is used for coupling coil ground plane；
The coupling coil is with loop coil jaggy, and indentation, there draws two lines and connects external operating circuit, for carrying out
The output of four road differential signals；The coupling coil include coupling coil A (13), coupling coil B (14), coupling coil C (15) and
Coupling coil D (16)；Coupling coil according to difference 90 degree of physical angle and protrude into ground level fluting (7) protrusion differ 45 degree
It is distributed in isometric one week for intersecting double loop antenna, and is located at below isometric intersection double loop antenna；Coupling coil A (13) connect
Ground wire passes through via hole A (9) connection ground level B (8)；The ground line of coupling coil B (14) connects ground level B by via hole B (10)
(8)；The ground line of coupling coil C (15) passes through via hole C (11) connection ground level B (8)；The ground line of coupling coil D (16) is logical
Via hole D (12) connection ground level B (8)；
The isometric intersection double loop antenna includes cross one another ring A (23) and ring B (24)；The main body of ring A (23) and ring B (24)
Part is located at top metal (4), and the infall of ring A (23) and ring B (24) are distributed in 180 degree, due to being limited by technique,
The infall is respectively equipped with auxiliary connection A (17) and auxiliary connection B (18), and assists connection A (17) and auxiliary connection B (18) equal
Positioned at third layer metal (3), wherein auxiliary connection B (18) passes through via hole G (21) and via hole H (22) with the main part of (23) ring A
Split-phase connects；Auxiliary connection A (17) is connected with via hole F (20) with the main part of ring B (24) by via hole E (19)；Ring A and ring B
Perimeter it is equal, be fundamental signal wavelength.
2. the Terahertz superhet quadrature detection array that a kind of CMOS according to claim 1 integrates source, which is characterized in that
The protrusion A (33) is equipped with signal injection positive ends A (25), signal injection negative polarity end A (29), and signal injection anode
Property end A (25) connect ring A (23), be 270 degree of fundamental signal for injecting phase；Signal injection negative polarity end A (29) meets ring B
(24), the fundamental signal for being 90 degree for Injection Signal, signal injects positive ends A (25) and signal injects negative polarity end A
(29) a pair of of differential signal injection port is formed；
The protrusion B (34) is equipped with signal injection positive ends B (26), signal injection negative polarity end B (30), and signal injects
Positive ends B (26) connects ring A (23), the fundamental signal for being 0 degree for injecting phase；Signal injection negative polarity end B (30) meets ring B
It (24), is the fundamental signal of 180 degree for Injection Signal, signal injects positive ends B (26) and signal injects negative polarity end B
(30) a pair of of differential signal injection port is formed；
The protrusion C (35) is equipped with signal injection positive ends C (27), signal injection negative polarity end C (31), and signal injects
Positive ends C (27) connects ring A (23), the fundamental signal for being 90 degree for injecting phase；Signal injection negative polarity end C (31) connects ring
B (24), the fundamental signal for being 270 degree for Injection Signal, signal injects positive ends C (27) and signal injects negative polarity end C
(31) a pair of of differential signal injection port is formed；
The protrusion D (36) is equipped with signal injection positive ends D (28), signal injection negative polarity end D (32), and signal injects
Positive ends D (28) connects ring A (23), for injecting the fundamental signal that phase is 180 degree；Signal injection negative polarity end D (32) connects
Ring B (24), the fundamental signal for being 0 degree for Injection Signal, signal injects positive ends D (28) and signal injects negative polarity end D
(32) a pair of of differential signal injection port is formed.
3. the Terahertz superhet quadrature detection array that a kind of CMOS according to claim 1 integrates source, which is characterized in that
The via hole A (9), via hole B (10), the height of via hole C (11) and via hole D (12) are equal, and height is by via hole connection
The distance between bottom metal (1) and second layer metal (2) determine that material is copper；
The via hole E (19), via hole F (20), the height of via hole G (21) and via hole H (22) are equal, and height is by via hole connection
Auxiliary connection A (17), auxiliary connection B (18) to the distance between ring A (23), ring B (24) determine that material is copper.
4. the Terahertz superhet quadrature detection array that a kind of CMOS according to claim 1 integrates source, which is characterized in that
The diameter of the via hole A (9) of the ground line and ground level B (8) for connecting coupling coil A (13) is coupling coil A
(13) width of ground line；
The diameter of the via hole B (10) of the ground line and ground level B (8) for connecting coupling coil B (14) is coupling coil B
(14) width of ground line；
The diameter of the via hole C (11) of the ground line and ground level B (8) for connecting coupling coil C (15) is coupling coil C
(15) width of ground line；
The diameter of the via hole D (12) of the ground line and ground level B (8) for connecting coupling coil D (16) is coupling coil D
(16) width of ground line；
The diameter for connecting the via hole E (19) for assisting connection A (17) and ring B (24), via hole F (20) is ring B (24)
Width；
The diameter for connecting the via hole G (21) for assisting connection B (18) and ring A (23), via hole H (22) is ring A (23)
Width.
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| WO2021147054A1 (en) * | 2020-01-22 | 2021-07-29 | 华为技术有限公司 | Integrated circuit |
| CN113328249B (en) * | 2021-04-21 | 2022-02-15 | 北京理工大学 | Antenna system for detecting target information by ultra-wideband |
| CN113258242B (en) * | 2021-06-22 | 2021-10-01 | 之江实验室 | Eight-path orthogonal power combiner based on transformer |
| WO2023212860A1 (en) * | 2022-05-05 | 2023-11-09 | 中国科学院深圳先进技术研究院 | Terahertz near-field audio modulation and demodulation nano-probe array system and method, and storage medium |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105129717A (en) * | 2015-07-06 | 2015-12-09 | 电子科技大学 | Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof |
| WO2016135730A1 (en) * | 2015-02-26 | 2016-09-01 | Ramot At Tel-Aviv University Ltd. | Technique for improving efficiency of on-chip antennas |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8830137B2 (en) * | 2010-10-26 | 2014-09-09 | California Institute Of Technology | Travelling wave distributed active antenna radiator structures, high frequency power generation and quasi-optical filtering |
| US9442066B2 (en) * | 2014-10-03 | 2016-09-13 | Wave Works, Inc. | Traveling wave based THz signal generation system and method thereof |
-
2016
- 2016-10-14 CN CN201610897860.9A patent/CN106450803B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016135730A1 (en) * | 2015-02-26 | 2016-09-01 | Ramot At Tel-Aviv University Ltd. | Technique for improving efficiency of on-chip antennas |
| CN105129717A (en) * | 2015-07-06 | 2015-12-09 | 电子科技大学 | Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof |
Non-Patent Citations (4)
| Title |
|---|
| 《A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications》;Ullrich R. Pfeiffer等;《IEEE JOURNAL OF SOLID-STATE CIRCUITS》;20141231;全文 |
| 《A High-Power and Scalable 2-D Phased Array for Terahertz CMOS Integrated Systems》;Yahya Tousi等;《IEEE JOURNAL OF SOLID-STATE CIRCUITS》;20150220;全文 |
| 《Mutual Synchronization for Power Generation and Beam-Steering in CMOS With On-Chip Sense Antennas Near 200 GHz》;Kaushik Sengupta等;《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》;20150930;全文 |
| 《Sub-THz Beam-forming using Near-field Coupling of Distributed Active Radiator Arrays》;Kaushik Sengupta等;《2011 IEEE Radio Frequency Integrated Circuits Symposium》;20110705;全文 |
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