CN105129717A - Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof - Google Patents
Micro-bridge structure of broadband high-absorption terahertz wave and fabrication method thereof Download PDFInfo
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Abstract
The invention provides a micro-bridge structure of a broadband high-absorption terahertz wave and a fabrication method thereof, which belong to the technical field of imaging of a terahertz detection array at a room temperature and are used for solving the problem of low responsivity under a wide frequency band of a terahertz detector. The micro-bridge structure comprises a metal absorption film at a top layer, a metamaterial pattern at an intermediate layer and a micro electro-mechanical system (MEMS) micro bridge at a bottom layer, wherein silicon nitride dielectric layers are arranged among the metal absorption film, the metamaterial pattern and the MEMS micro bridge in a pairwise manner at intervals; the metal absorption film is an impedance-matching nano-scale metal absorption film; and the metamaterial pattern and the MEMS micro bridge jointly form a metamaterial absorption structure. By the impedance-matching nano-scale metal absorption thin film, the broadband absorption of the terahertz wave can be achieved, and high absorption of the terahertz can be guaranteed through the metamaterial absorption structure jointly formed by the metamaterial pattern and the MEMS micro bridge; the performance for broadband spectrum response and high absorption of the terahertz wave is achieved, and the responsivity of a micro-bridge structurized detection unit to the terahertz wave is comprehensively improved.
Description
Technical field
The invention belongs to room temperature terahertz detection array image-forming technical field, be specifically related to micro-bridge structure of a kind of broadband high-selenium corn THz wave and preparation method thereof.
Background technology
THz wave often refers to the electromagnetic wave of frequency in 0.1THz ~ 10THZ (wavelength 3mm ~ 30 μm).Because residing frequency range is more special, belong to the transition range of macroelectronics and microcosmic photonic propulsion, therefore THz wave table reveals and is a series ofly different from the electromagnetic peculiar property of other frequency ranges, makes it to have important scientific research value and wide application in military and civilian field (as imaging, communication, remote sensing, radar, astronomy, biomedicine etc.).Compared with other ripples, the feature of THz wave has the frequency range of 1. terahertz emission very wide, the various macromolecular rotational frequency of its nearly cover and concussion frequency; 2. terahertz emission has very high spatial resolution and temporal resolution; 3. the energy of terahertz emission is very little, only has a few milli electron-volt, is not easy to destroy detected material; 4. terahertz emission has the penetrability to Cucumber; 5. the time-domain spectral signal to noise ratio of terahertz emission is very high, at present, can be greater than 10 to the signal to noise ratio of terahertz emission ionization meter
10.
Common terahertz detector type mainly contains unit or the multiunit detector such as Ge, Si and InSb bolometer (Bolometer), Golay detector (GolayCell), pyroelectricity (Pyroelectric), Schottky diode, field-effect transistor of refrigeration.The pyroelectricity of current comparative maturity and micro-metering bolometer (Micro-Bolometer) all belong to thermal detector, micro-metering bolometer is infrared and one of the important application of terahertz detection device, wherein non-brake method Terahertz micro-metering bolometer and infrared micro-bolometer have similar structure, and the main direction of studying of current terahertz detection structure is by obtaining the improvement of the latter.The terahertz detection process of micro-metering bolometer, come mainly through micro-bridge structure, thermo-sensitive material in micro-bridge structure is arranged in bridge floor dielectric layer, top level structure is converted into heat energy after absorbing terahertz emission, bridge floor is made to produce temperature rise and thermo-sensitive material resistance variations, then read resistance variations by biasing circuit, and then obtain incident terahertz emission amount size.
It can thus be appreciated that, the absorbent properties of micro-bridge structure to terahertz emission are key factors that terahertz detector manufactures success or failure or performance height, thus, for meeting the demand of high-performance terahertz wave detector, the micro-bridge structure realizing the absorption of high-selenium corn THz wave in wide-band becomes our research emphasis.
Summary of the invention
The object of the invention is for the low problem of responsiveness under current terahertz detector wide-band, design micro-bridge structure of a kind of broadband high-selenium corn THz wave and preparation method thereof, in order to realize wide spectral, the high-selenium corn to THz wave, improve micro-bridge structure probe unit to the responsiveness of THz wave.
For achieving the above object, the technical solution used in the present invention is:
A micro-bridge structure for broadband high-selenium corn THz wave, comprises the metallic absorbing layer being positioned at top layer, the Meta Materials figure being positioned at intermediate layer, the MEMS microbridge that is positioned at bottom, and arrange between any two silicon nitride medium interlayer every; Described metallic absorbing layer is the nano level metal absorbing membrane of impedance matching, absorbs for THz wave broadband; Described MEMS microbridge comprises bottom metal reflecting layer and is supported in the bridge floor on bottom metal reflecting layer by bridge leg, described bridge floor comprises the supporting layer, metal electrode, the sensitive material that set gradually from the bottom up, forms microbridge cavity between bridge floor and bottom metal reflecting layer; Described Meta Materials figure and MEMS microbridge form Meta Materials absorbing structure jointly, described microbridge cavity and bridge floor form the middle dielectric layer of Meta Materials absorbing structure jointly, MEMS microbridge bottom metal reflecting layer forms Meta Materials absorbing structure reflecting layer, namely jointly forms the Meta Materials absorbing structure being followed successively by reflecting layer, middle dielectric layer and graph layer from the bottom up with Meta Materials figure.
Further, described Meta Materials figure is split ring resonator array, logarithm antenna, butterfly antenna or split ring resonator composite junction, and thickness profile is 100 ~ 500nm.
Described metallic absorbing layer is gold, titanium, nickel, chromium, aluminium and composite material film thereof, and film thickness is 10nm ~ 20nm.
The preparation method of the micro-bridge structure of described broadband high-selenium corn THz wave, comprises the following steps:
Step 1. uses PECVD height mixing technique at the silicon nitride medium layer at previously prepared high MEMS microbridge surface deposition, thickness is 0.1um ~ 1um, for the protection of the heat-sensitive material layer of bridge floor, MESM microbridge and Meta Materials figure are separated simultaneously, prevent from occurring short circuit phenomenon between two-part structure;
Step 2., on the basis of step 1, first uses magnetron sputtering method to prepare metallic film, and THICKNESS CONTROL, within the scope of 100 ~ 500nm, then adopts photoetching process to carry out the making of Meta Materials figure;
Step 3., on the basis of step 2, adopts dry etch process or wet corrosion technique, metallic film is etched away formation metallic pattern, finally uses acetone soln to clean under ultrasound condition, completes Meta Materials graphic making;
Step 4. is on the basis of step 3, and adopt pecvd process to prepare the silicon nitride medium layer of low stress, thickness is 0.1um ~ 1um, for Metal absorption film and Meta Materials figure being separated, to prevent the short circuit of Meta Materials figure;
Step 5. is on the basis of step 4, first magnetron sputtering method is adopted to prepare Metal absorption film, then adopt the post-etching phenomenon of reactive ion etching method and dry etching that Metal absorption film is thinned to 10nm ~ 20nm, or adopt wet chemical etching technique method that Metal absorption film is thinned to 10nm ~ 20nm;
Step 6., on step 5 basis, for improving the absorption efficiency of Metal absorption film THz wave, adopting fluorine-based plasma to carry out surface bombardment process to Metal absorption film, making metal film surfaces roughening; Fluorine ion energy and concentration when etching by regulating, a large amount of fluorine ion is made to be adsorbed onto Metal absorption Rough Surfaces of Thin Film and in diffusion into the surface and reaction, obtain the Metal absorption film of surface enrichment fluorine ion, after etching, fluorine ion generates mass crystallization defect at coarse metal film surfaces, makes metal film surfaces melanism; Namely the preparation of micro-bridge structure of the present invention is completed.
In the present invention, foundation EFFECTIVE MEDIUM THEORY, S parameter method, super thin metal absorbing film and THz wave intreractive theory, electromagnetic transmission theory are for instruct, carry out the design of class Meta Materials micro-bridge structure, build the theoretical model that class Meta Materials micro-bridge structure absorbs terahertz emission.Also consider material parameter and the process route feasibility of micro-bridge structure simultaneously, make the preparation method of micro-bridge structure in conjunction with micro-bridge structure design rule and possible designs, finally to obtain the THz wave detection micro-bridge structure of wide spectral response, high-absorbility.
There is provided in the present invention in micro-bridge structure, the broadband that the nano level metal absorbing membrane of impedance matching can realize THz wave absorbs, and Meta Materials figure and MEMS micro-bridge structure form Meta Materials absorbing structure (i.e. above-mentioned class Meta Materials micro-bridge structure) jointly can ensure high-selenium corn to THz wave.Class Meta Materials micro-bridge structure becomes innovative point of the present invention, using the bottom metal reflecting layer in MEMS micro-bridge structure as Meta Materials absorbing structure reflecting layer, the above structure in bottom metal reflecting layer forms Meta Materials absorbing structure middle dielectric layer jointly, form three layers of Meta Materials absorbing structure with Meta Materials figure, more than 90% of incident THz wave energy can be absorbed; Simultaneously, the present invention is by the research to processing compatibility, effectively the super thin metal absorbing film three of the Meta Materials absorbing structure of MEMS micro-bridge structure, broadband absorption, impedance matching is organically combined, overcome the problem of the absorption of low terahertz emission and narrow spectral response, realization responds the wide spectral of THz wave, the performance of high-selenium corn, improves the responsiveness of micro-bridge structure probe unit to THz wave on the whole.
Accompanying drawing explanation
Fig. 1 is the micro-bridge structure schematic diagram of broadband high-selenium corn THz wave of the present invention, 1 be MEMS microbridge, 2 is wherein Meta Materials figure, 3 for metallic absorbing layer.
Fig. 2 is the micro-bridge structure preparation method schematic flow sheet of broadband high-selenium corn THz wave in embodiment, wherein, the super thin metal absorbing membrane Ti of 10 be substrate, 11 be drive circuit, 12 be metallic aluminium reflecting layer, 13 be circuit interface, 14 be sacrifice layer, 15 be cushion, 16 be supporting layer, 17 be top electrodes, 18 be vanadium oxide film, 19 be the first silicon nitride medium layer, 20 be log-periodic antenna layer, 21 to be the second silicon nitride medium layer, 22 be impedance matchings.
Fig. 3 is the corresponding diagram of Meta Materials absorbing structure and micro-bridge structure model in the present invention.
Fig. 4 is the schematic diagram of Meta Materials figure in the present invention, and wherein, 4-a is split ring resonator array, Fig. 4-b is log-periodic antenna, Fig. 4-c is split ring resonator composite construction.
Detailed description of the invention
Below in conjunction with drawings and Examples, description is described in further detail to the present invention.
In the present embodiment, the micro-bridge structure of broadband high-selenium corn THz wave as shown in Figure 1, comprises the metallic absorbing layer 3 being positioned at top layer, the Meta Materials figure 2 being positioned at intermediate layer, is positioned at the MEMS microbridge 1 of bottom, and arrange between any two silicon nitride medium interlayer every; Described metallic absorbing layer is the nano level metal absorbing membrane Ti of impedance matching, absorbs for THz wave broadband; Described MEMS microbridge is as shown in Fig. 2-a, comprise substrate 10, drive circuit 11, metallic aluminium reflecting layer 12, be supported in the bridge floor on metallic aluminium reflecting layer by bridge leg, bridge floor comprises the supporting layer 16, top electrodes 17, the vanadium oxide film (sensitive material) 18 that set gradually, supporting layer 16 is positioned on sacrifice layer 14, sacrifice layer 14 is positioned on metallic aluminium reflecting layer 12, and top electrodes 17 is connected with circuit interface 13 by cushion 15; Described Meta Materials figure is log-periodic antenna.The micro-bridge structure of above-mentioned broadband high-selenium corn THz wave is prepared by following steps:
Step 1. is on the MEMS micro-bridge structure prepared, use PECVD height mixing technique at the first silicon nitride medium layer of the 0.1um of microbridge surface deposition, thermo-sensitive material-the vanadium oxide film of main protection bridge floor, MEMS microbridge and log-periodic antenna are separated simultaneously, prevent from occurring short circuit phenomenon between two-part structure, as shown in Fig. 2-b;
Step 2. is on the basis of step 1, magnetron sputtering method is used to prepare NiCr film, THICKNESS CONTROL at 200nm, then photoetching (with automatic glue spreaders spin coating one deck positive photoresist, soft baking, aligning and exposure, post exposure bake, development, post bake on nickel-chromium thin film cure, inspection of developing);
Step 3., on the basis of step 2, uses wet corrosion technique, is etched by NiCr film, then uses acetone soln cleaning photoetching glue under ultrasound condition, completes the making of log-periodic antenna, as shown in fig. 2-c;
Step 4. is on the basis of step 3, PECVD device and height mixing technique is used to prepare 200nm silicon nitride, i.e. the second silicon nitride medium layer, to ensure the RESONANCE ABSORPTION of log-periodic antenna, the Metal absorption film of impedance matching and log-periodic antenna are separated simultaneously, prevent antenna short circuit, as shown in Fig. 2-d;
Step 5. is on the basis of step 4, and the Ti of first magnetron sputtering 20nm, then use reactive ion etching method and dry etching, meets the condition of impedance matching, as shown in Fig. 2-e by the ultrathin metallic film of thinning for metal Ti one-tenth 10nm;
Step 6., on step 5 basis, for improving the absorption efficiency of Metal absorption film THz wave, adopting fluorine-based plasma to carry out surface bombardment process to Metal absorption film Ti, carrying out surperficial Darkening process;
Step 7. uses plasma degumming machine releasing sacrificial layer, completes the preparation of micro-bridge structure, and complete structural representation is as shown in 2-f;
Finally probe unit tested, encapsulate.
The above, be only the specific embodiment of the present invention, arbitrary feature disclosed in this specification, unless specifically stated otherwise, all can be replaced by other equivalences or the alternative features with similar object; Step in disclosed all features or all methods or process, except mutually exclusive feature and/or step, all can be combined in any way.
Claims (4)
1. a micro-bridge structure for broadband high-selenium corn THz wave, comprises the metallic absorbing layer being positioned at top layer, the Meta Materials figure being positioned at intermediate layer, the MEMS microbridge that is positioned at bottom, and arrange between any two silicon nitride medium interlayer every; Described metallic absorbing layer is the nano level metal absorbing membrane of impedance matching, absorbs for THz wave broadband; Described MEMS microbridge comprises bottom metal reflecting layer and is supported in the bridge floor on bottom metal reflecting layer by bridge leg, forms microbridge cavity between bridge floor and bottom metal reflecting layer; Described Meta Materials figure and MEMS microbridge form Meta Materials absorbing structure jointly, described microbridge cavity and bridge floor form the middle dielectric layer of Meta Materials absorbing structure jointly, described bottom metal reflecting layer forms Meta Materials absorbing structure reflecting layer, namely jointly forms the Meta Materials absorbing structure being followed successively by reflecting layer, middle dielectric layer and graph layer from the bottom up with Meta Materials figure.
2., by the micro-bridge structure of broadband high-selenium corn THz wave described in claim 1, it is characterized in that, described Meta Materials figure is split ring resonator array, logarithm antenna, butterfly antenna or split ring resonator composite junction, and thickness profile is 100 ~ 500nm.
3., by the micro-bridge structure of broadband high-selenium corn THz wave described in claim 1, it is characterized in that, described metallic absorbing layer is gold, titanium, nickel, chromium, aluminium and composite material film thereof, and film thickness is 10nm ~ 20nm.
4., by the preparation method of the micro-bridge structure of broadband high-selenium corn THz wave described in claim 1, comprise the following steps:
Step 1. adopts PECVD height mixing technique at the silicon nitride medium layer at previously prepared high MEMS microbridge surface deposition, and thickness is 0.1um ~ 1um;
Step 2. is on the basis of step 1, and first use magnetron sputtering method to prepare metallic film, THICKNESS CONTROL is within the scope of 100 ~ 500nm;
Step 3., on the basis of step 2, adopts dry etch process or wet corrosion technique, and metallic film etching is formed metallic pattern, finally uses acetone soln to clean under ultrasound condition, completes Meta Materials graphic making;
Step 4. is on the basis of step 3, and adopt step 1 same procedure to prepare silicon nitride medium layer, thickness is 0.1um ~ 1um;
Step 5. is on the basis of step 4, first magnetron sputtering method is adopted to prepare Metal absorption film, then adopt the post-etching phenomenon of reactive ion etching method and dry etching that Metal absorption film is thinned to 10nm ~ 20nm, or adopt wet chemical etching technique method Metal absorption film to be thinned to 10nm ~ 20nm, i.e. metallic absorbing layer;
Step 6., on step 5 basis, adopts fluorine-based plasma to carry out surface bombardment process to Metal absorption film, carries out Darkening process, namely complete the preparation of micro-bridge structure of the present invention to Metal absorption film surface.
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| CN109149322A (en) * | 2017-06-27 | 2019-01-04 | 中国科学院半导体研究所 | THz antenna and preparation method thereof |
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| CN110416349A (en) * | 2019-07-10 | 2019-11-05 | 中国科学院上海技术物理研究所 | A kind of regulatable room temperature graphene terahertz detector and preparation method thereof |
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| CN111207842A (en) * | 2020-01-14 | 2020-05-29 | 电子科技大学 | Absorption structure for terahertz micro-bolometer and preparation method thereof |
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