CN110416349A - A kind of regulatable room temperature graphene terahertz detector and preparation method thereof - Google Patents
A kind of regulatable room temperature graphene terahertz detector and preparation method thereof Download PDFInfo
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- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
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Abstract
The invention discloses a kind of regulatable room temperature graphene terahertz detectors and preparation method thereof.Device architecture is from bottom to top successively are as follows: first layer is that substrate, the second layer are graphenes and to ride over the plane opening loop antenna on graphene and the metal electrode being connected with antenna, third layer be dielectric layer, and the 4th layer is grid.Device preparation step is transferred graphene on substrate using wet process transfer techniques, plane opening loop antenna and metal electrode are prepared, oxygen rie is used, graphically as channel material, to grow gate dielectric layer with atom layer deposition process to graphene, grid is prepared, terahertz detector is formed.Its working principle is that the regulation of the concentration and speed of graphene carriers by Terahertz electric field, occurrence and distribution formula resistance self-mixing generate DC response signal.The detector have the characteristics that high speed, wideband and high response rate, it can be achieved that source and drain bias and grid voltage dual regulation, to realize that room temperature terahertz detector large-scale application lays the foundation.
Description
Technical field
The present invention relates to a kind of regulatable room temperature graphene terahertz detectors and preparation method thereof, refer specifically to graphite
Alkene material and plane split ring antenna combine preparation field-effect tube device, and using zero band gap of graphene, carrier mobility is high
The characteristics of realize quick response, realize the efficient coupling of Terahertz electric field using plane opening loop antenna, and then realize high response
Rate.The principle of device is: under terahertz light photograph, tune of the concentration and speed of graphene carriers by Terahertz electric field
Control, occurrence and distribution formula resistance self-mixing generate DC response signal.The detector has high speed, wideband and high response rate etc. special
The dual regulation, it can be achieved that source and drain bias and grid voltage is put, to realize that room temperature terahertz detector large-scale application lays the foundation.
Background technique
THz wave is electromagnetic wave of the frequency range in 0.1THz to 10THz, and wavelength corresponds to 3 millimeters to 30
Micron, the characteristic value that photon corresponds to energy is 4 milli electron-volts.The energy range can phase with the vibrational energy of molecule and rotation
Match, much smaller than the energy gap of general semiconductor, propagation, scattering and in terms of show with microwave, infrared and visible light not
Same feature, provides very big free space for the transmission of information, the characterization of material and manipulation.Terahertz wave band is located at
The crossing domain of electronics subject and photon subject, correlative study can promote the two subject convergences and development.Currently, to terahertz
Research and development hereby is not mature enough, and lacks efficient THz source, terahertz detector and Terahertz modulator, therefore quilt
Referred to as " Terahertz blank (THz Gap) ".
Specific position of the THz wave in electromagnetic spectrum determines that it has many unique properties: (1) Terahertz spoke
The photon energy penetrated generally only has milli electron volts, and lower than the Chemical bond energy of Common materials, therefore THz wave can be effectively
Ensure that the structural intergrity of detected object can be applied to public to airport, station, harbour etc. without causing ionization to destroy
Occasion carries out safety inspection.(2) intrinsic vibration of many organic structure macromoleculars is at terahertz wave band, these substances have
Corresponding Terahertz dactylogram can use identification and detection that THz wave carries out substance.(3) terahertz emission has relatively strong
Penetrability, can be used for quality-monitoring and to nontransparent object perspective be imaged.(4) pulse width of terahertz emission only picosecond
The signal-to-noise ratio of magnitude, time-domain spectral measurement is high, so being very suitable to imaging technique.(5) THz wave with it is roomy, wireless transmission
Rate it is high, ambient noise is small and is not easily disturbed, and has huge application value in communication field between wireless.(6) too
Hertz wave coherence is good, by coherent measurement and Fourier Transform Technique, can rapidly obtain object electromagnetic characteristic.In short,
THz wave in electromagnetic spectrum between microwave and it is infrared between, and possess numerous excellent characteristics, reflect in safety check, substance
The fields such as fixed, medicine, imaging and communication possess huge development prospect, therefore carry out the depth to the Detection Techniques of THz wave
Entering research has realistic meaning.
Developing High-speed, high response rate, can working and room temperature terahertz detection technology be realize Terahertz Technology development and application
Key, improve light and device coupling ability and incident photon-to-electron conversion efficiency be the breach of terahertz detection.Current commercial terahertz
Hereby detector includes pyroelectricity terahertz detector, bolometer and Schottky diode.In general, the response of pyroelectric detector
Speed is slow；Schottky diode working frequency is relatively low, complex process；Bolometer is needed in low-temperature working condition.Separately
Outside, Quantum Well Terahertz detector is highly susceptible to the influence of thermal agitation；The quantum of field effect transistor terahertz detector is imitated
Rate is also relatively low.Therefore, it develops new material and explores new principle to realize that terahertz detection becomes terahertz detection field
Hot spot, receive significant attention.Grapheme material has zero band gap, and electron mobility is big, high mechanical strength, can large area life
The advantages that long；Plane opening loop antenna can be realized to Terahertz electric field efficient coupling.The two is Development of Novel Terahertz jointly
Detector provides new selection scheme.
Summary of the invention
The present invention proposes a kind of regulatable room temperature graphene terahertz detector and preparation method thereof, realizes quickly,
Highly sensitive room temperature terahertz detection.Its working principle is that when Terahertz light irradiation device, the concentration of graphene carriers
Regulation with speed by Terahertz electric field, occurrence and distribution formula resistance self-mixing generate DC response signal.The detector has
At a high speed, wideband and the features such as high response rate, it can be achieved that the dual regulation of source and drain bias and grid voltage, to realize room temperature terahertz detection
Device large-scale application lays the foundation.
The present invention refers to a kind of regulatable room temperature graphene terahertz detector and preparation method thereof, the knot of the detector
Structure is from bottom to top are as follows: first layer is that substrate 1, the second layer are graphenes 2 and ride over plane opening loop antenna 3 on graphene
The source electrode 4 that is connected with antenna and drain electrode 5, third layer be dielectric layer 6, the 4th layer be grid 7；
The substrate 1 is intrinsic silicon and the silicon dioxide layer being covered on it；
The graphene 2 is single-layer graphene；
Plane opening loop antenna 3, source electrode 4 and the drain electrode 5 has two metal layers, and lower metal is chromium, upper layer metal
For gold；
The dielectric layer is aluminium oxide；
The grid 7 has two metal layers, and lower metal is chromium, and upper layer metal is gold.
The present invention refers to a kind of regulatable room temperature graphene terahertz detector and preparation method thereof, the device preparation packet
Include following steps:
1) oxide skin(coating) is prepared as substrate 1 on intrinsic silicon by thermal oxidation method；
2) it is shifted by wet process and graphene 2 is transferred to 1 surface of substrate；
3) ultraviolet photolithographic technology or electron beam lithography are used, is being made in conjunction with electron beam deposition and conventional stripping process
Standby 3 source electrode 4 of plane opening loop antenna and drain electrode 5；
4) using oxygen rie technology that graphene is graphical, as channel material
5) atom layer deposition process somatomedin layer 6 is used；
6) grid 7 is prepared on dielectric layer 6 by electron beam exposure and electron beam deposition technique, completion prepares regulatable
Room temperature graphene terahertz detector.
The advantages of the invention patent, is:
1) reflection of the substrate to Terahertz is efficiently reduced as substrate using intrinsic silicon, improves the coupling effect of device
Rate, therefore improve the Terahertz responsiveness of device.
2) using graphene as conducting channel material, grapheme material has zero band gap, and electron mobility is big, mechanical strong
Degree is high, can large area deposition the advantages that, can be used for the terahertz detection of wideband, high speed.
3) plane split ring antenna structure is used, the coupling ability of THz wave and detector is enhanced, improves detection
The quantum efficiency and photoelectric conversion ability of device.
Detailed description of the invention
Fig. 1 is the schematic side view of the regulatable room temperature graphene terahertz detector of the present invention；
In figure: 1 silicon substrate, 2 graphenes, 3 planes opening loop antenna, 4 source electrodes, 5 drain electrodes, 6 dielectric layers, 7 grids.
Fig. 2 is the structure schematic top plan view of regulatable room temperature graphene terahertz detector；
Fig. 3 is the experimental provision schematic diagram of regulatable room temperature graphene terahertz detector test；
Fig. 4 is regulatable room temperature graphene terahertz detector chopping frequency 1kHz at room temperature, the work of 0.12THz
Response wave shape figure under working frequency；
Fig. 5 is regulatable room temperature graphene terahertz detector chopping frequency 1kHz at room temperature, the work of 0.3THz
Response wave shape figure under frequency；
Fig. 6 is response diagram of the regulatable room temperature graphene terahertz detector under bias regulation；
Fig. 7 is response diagram of the regulatable room temperature graphene terahertz detector under grid voltage regulation.
Specific embodiment:
It elaborates below in conjunction with attached drawing to a specific embodiment of the invention:
The present invention proposes a kind of regulatable room temperature graphene terahertz detector and preparation method thereof, realizes quickly,
Highly sensitive room temperature terahertz detection.Its working principle is that when Terahertz light irradiation device, the concentration of graphene carriers
Regulation with speed by Terahertz electric field, occurrence and distribution formula resistance self-mixing generate DC response signal.The detector has
At a high speed, wideband and the features such as high response rate, it can be achieved that the dual regulation of source and drain bias and grid voltage, to realize room temperature terahertz detection
Device large-scale application lays the foundation.
Specific step is as follows:
1. substrate selects
Select the silica of intrinsic silicon and covering thereon as substrate.
2. graphene preparation and transfer
Substrate surface is transferred graphene to by wet process transfer；
3. using ultraviolet photolithographic technology or electron beam lithography, made in conjunction with electron beam deposition and conventional stripping process
Standby plane opening loop antenna, source electrode and drain electrode；
4. it is using oxygen rie technology that graphene is graphical, as channel material
5. using atom layer deposition process somatomedin layer, material is aluminium oxide；
6. preparing grid on dielectric layer by electron beam exposure and electron beam deposition technique, completion prepares regulatable room
Warm graphene terahertz detector.
7. the graphene terahertz detector prepared is carried out photoelectric respone test.As shown in figure 3, using 0.02-
The terahertz emission of 0.3THz is irradiated in sensitive detection parts, and the photo-signal that sensitive detection parts generate passes through current amplifier
(SR570) amplified signal inputs oscillograph and lock-in amplifier (SR830) respectively, the copped wave letter built in microwave source (E8257D)
Number oscillograph and lock-in amplifier are inputted respectively as reference signal.In test process device show superelevation response rate and quickly
The ability of detection.
A) when the length of channel is 6 nanometers, channel width is 10 microns.It is 50 every square millimeter of microwatts in power density
, it can be achieved that the photoelectric current of 30 Naans under THz wave irradiation.
B) when the length of channel is 8 nanometers, channel width is 10 microns.It is 50 every square millimeter of microwatts in power density
, it can be achieved that the photoelectric current of 12 Naans under THz wave irradiation.
C) when the length of channel is 10 nanometers, channel width is 10 microns.It is 50 every square millimeter of microwatts in power density
THz wave irradiation it is lower, it can be achieved that 5 Naans photoelectric current.
When the parameter of panel detector structure changes in a certain range in the present invention, room temperature graphene terahertz detector has
Good detection performance, test result show that the response time of device can achieve 1 microsecond, and in 0.12 THz, response rate can be with
Reach 1000V/W, noise equivalent power reaches 50pW/Hz0.5, and the regulation of the performance under bias voltage and grid voltage is realized, can have
Effect carries out room temperature detection to THz wave, there is biggish application value in terahertz detection field.
Claims (2)
1. a kind of regulatable room temperature graphene terahertz detector, including substrate (1), graphene (2), plane opening loop antenna
(3), source electrode (4), drain electrode (5), dielectric layer (6) and grid, it is characterised in that:
The structure of the detector is from bottom to top are as follows: first layer is that substrate (1), the second layer are graphenes (2) and ride over graphite
Plane opening loop antenna (3) and the source electrode (4) that is connected with antenna on alkene and drain (5), third layer is dielectric layer (6), the
Four layers are grid (7)；
The substrate (1) is the intrinsic silicon with silicon dioxide layer；
The graphene (2) is single-layer graphene；
Plane opening loop antenna (3), source electrode (4) and the drain electrode (5) has two metal layers, and lower metal is chromium, upper layer
Metal is gold；
The dielectric layer (6) is aluminium oxide；
The grid (7) has two metal layers, and lower metal is chromium, and upper layer metal is gold.
2. a kind of preparation method for preparing regulatable room temperature graphene terahertz detector as described in claim 1, feature
Be the following steps are included:
1) silicon dioxide layer is prepared as substrate (1) on intrinsic silicon by thermal oxidation method；
2) it is shifted by wet process and graphene (2) is transferred to substrate (1) surface；
3) ultraviolet photolithographic technology or electron beam lithography are used, it is flat in preparation in conjunction with electron beam deposition and conventional stripping process
Face opening loop antenna (3) source electrode (4) and drain electrode (5)；
4) using oxygen rie technology that graphene is graphical, as channel material；
5) atom layer deposition process somatomedin layer (6) is used；
6) it is prepared on dielectric layer (6) grid (7) by electron beam exposure and electron beam deposition technique, completion prepares regulatable
Room temperature graphene terahertz detector.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110828604A (en) * | 2019-11-18 | 2020-02-21 | 中国科学院上海技术物理研究所 | Adjustable room-temperature black arsenic-phosphorus terahertz detector and preparation method thereof |
| CN111370523A (en) * | 2020-03-16 | 2020-07-03 | 电子科技大学 | Graphene terahertz wave tunable detector based on graphical ferroelectric domain |
| CN111463289A (en) * | 2020-04-13 | 2020-07-28 | 国家纳米科学中心 | Field effect transistor and preparation method and application thereof |
| CN113764858A (en) * | 2021-08-27 | 2021-12-07 | 西安交通大学 | Graphene-based antenna-enhanced terahertz detector and preparation method thereof |
| CN116404396A (en) * | 2023-05-23 | 2023-07-07 | 苏州科技大学 | Antenna assembly for terahertz detector |
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| CN113764858A (en) * | 2021-08-27 | 2021-12-07 | 西安交通大学 | Graphene-based antenna-enhanced terahertz detector and preparation method thereof |
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